JP5324761B2 - High brightness light emitting diode and method for manufacturing the same - Google Patents

Abstract

A red-color high-luminance light-emitting diode that eliminates defects caused by high Vf while exhibiting excellent life performance and high luminance, as well as a manufacturing method for the high-luminance light-emitting diode that assures stable manufacturing of the high-luminance light-emitting diode with improved yield and productivity. The high-luminance light-emitting diode has an AlGaInP 4-element luminescent layer that is made grown on a GaAs substrate, a p-type window layer for taking out luminescent light that is made grown on the top surface of the AlGaInP 4-element luminescent layer, and an n-type GaP window layer for taking out luminescent light that is made grown in a vapor phase epitaxial method on the rear side that is lattice-matched to GaAs on the AlGaInP 4-element luminescent layer after etching removal of the GaAs substrate. The n-type carrier density in early phase of growth of the n-type GaP window layer is increased, and then the n-type carrier density of the n-type GaP window layer after early phase of growth of the n-type GaP window layer is made lower than the n-type carrier density in early phase of growth of the n-type GaP window layer.

Description

The present invention relates to a high-intensity light-emitting diode having a double-sided epitaxial window layer and a method for manufacturing the same.

  Conventionally, as a method for manufacturing a substrate for a high-intensity light emitting diode, a method of attaching a GaP or GaAsP or AlGaAs layer as a light window layer on both sides of an AlGaInP quaternary light emitting layer is known (Patent Document 1). In this known method, in order to create light window layers on both sides of the AlGaInP light emitting layer, the AlGaInP light emitting layer is vapor-phase epitaxially grown on the substrate, and the emission light extraction window is formed on the p-type layer side of the AlGaInP light emitting layer surface. After the growth of the layer, the substrate was removed, and subsequently, an emission light extraction window layer of the n-type layer was grown on the back surface from which the substrate was removed by epitaxial growth of GaP, GaAsP or AlGaAs.

  However, the conventional method described above has the following problems. That is, after the emission light extraction window layer is grown on the p-type layer lattice-matched to the GaP of the quaternary emission layer of AlGaInP, the substrate is removed, and the emission light of the n-type layer is extracted on the back surface after removing the substrate. In the process of growing the window layer, GaAs, which is easily dissolved in a chemical solution and removed, is used as the substrate. When growing a GaP or GaAsP window layer on the back surface that is lattice-matched to GaAs, there is a problem that the amount of lattice displacement increases. Therefore, it has been common to form a GaP window layer for extracting emitted light from the back surface by bonding a GaP substrate to the back surface from which the substrate has been removed (Patent Document 2).

  However, in the bonding, there is a problem in that the yield is poor due to poor bonding at the bonding interface, high Vf defect at the bonding interface, and high ΔVf defect. In order to solve this problem, it has been attempted to grow a GaP or GaAsP window layer on the back surface lattice-matched to GaAs by hydride vapor phase epitaxy (HVPE). However, if the carrier concentration on the back surface is too low, Vf high defect and ΔVf high defect occur, and if the carrier concentration is too high, the luminance decreases due to absorption of emitted light, and the life decreases due to diffusion of high concentration carriers. There is a problem that invites.

ΔVf is an index indicating switching response characteristics when the light emitting element is dimmed and driven by high-speed switching (such as PMM control). The forward voltage Vf immediately after the start of energization by 20 mA energization is set to an initial value, and then energization is performed. The amount of decrease in the forward voltage Vf until the stable value of Vf that gradually decreases when the voltage continues is measured as ΔVf.
USP 5,008,718 USP 5,376,580

  The present invention has been made in view of the above-described problems of the prior art, and a first object of the present invention is to provide a red high-intensity light-emitting lamp having high life characteristics and high brightness, with no occurrence of high Vf defects. Is to provide. A second object of the present invention is to provide a method for manufacturing a high-intensity light emitting diode capable of manufacturing the above-described high-intensity light emitting diode with good yield and high productivity. A third object of the present invention is to provide a method for manufacturing a high-intensity light-emitting diode, which can stably manufacture a high-intensity light-emitting lamp free from defects in ΔVf, which has conventionally been a problem with bonded substrates.

In order to solve the above-mentioned problems, a first embodiment of the high-intensity light emitting diode of the present invention is an AlGaInP quaternary light emitting layer grown on a GaAs substrate and grown on the surface of the AlGaInP quaternary light emitting layer. A p-type window layer for extracting the emitted light, and for extracting the emitted light vapor-phase epitaxially grown on the back surface of the AlGaInP quaternary light emitting layer lattice-matched to GaAs after etching the GaAs substrate. N-type GaP window layer, and increasing the n-type carrier concentration at the initial stage of growth of the n-type GaP window layer, and subsequently setting the n-type carrier concentration of the n-type layer GaP after the initial growth stage of the n-type GaP window layer as described above. by lower than the n-type carrier concentration of the n-type layer GaP growth early, Oh high brightness light-emitting diodes as less luminance degradation and high brightness low Vf and ΔVf Te,
The n-type carrier concentration of the high carrier concentration window layer at the initial stage of the n-type layer GaP growth is 9 × 10 ¹⁷ pieces / cm ³ or more and 2 × 10 ¹⁸ pieces / cm ³ or less, and the n-type layer GaP growth initial stage. The n-type carrier concentration of the subsequent low carrier concentration window layer is 3 × 10 ¹⁷ pieces / cm ³ or more and 8 × 10 ¹⁷ pieces / cm ³ or less,
The thickness of the high carrier concentration window layer at the initial stage of the n-type layer GaP growth is 0.1 μm to 10 μm, and the thickness of the low carrier concentration window layer after the initial stage of the n-type layer GaP growth is 125 μm ± 30 μm. It is characterized by.

A first aspect of the method for manufacturing a high-intensity light emitting diode according to the present invention is a method for manufacturing a high-intensity light-emitting diode according to the first aspect of the present invention in which Vf and ΔVf are low, high-intensity and low in luminance degradation. A first step of growing an AlGaInP quaternary light emitting layer on a GaAs substrate by metal organic chemical vapor deposition (MOCVD); and a p-type for extracting emitted light on the surface of the AlGaInP quaternary light emitting layer. A second step of growing a window layer; a third step of removing the GaAs substrate by etching after the completion of the second step; and for extracting emitted light on the back surface of the AlGaInP quaternary light emitting layer lattice-matched to GaAs. A fourth step of vapor phase epitaxial growth of the n-type GaP window layer, and the first growth of the n-type GaP window layer in the vicinity of the back side interface of the quaternary light-emitting layer of the AlGaInP in the fourth step. The n-type carrier concentration in the n-type layer GaP after the initial growth of the n-type GaP window layer is made lower than the n-type carrier concentration in the initial growth of the n-type layer GaP .
The n-type carrier concentration of the high carrier concentration window layer at the initial stage of the n-type layer GaP growth is 9 × 10 ¹⁷ pieces / cm ³ or more and 2 × 10 ¹⁸ pieces / cm ³ or less, and the n-type layer GaP growth initial stage. The n-type carrier concentration of the subsequent low carrier concentration window layer is 3 × 10 ¹⁷ pieces / cm ³ or more and 8 × 10 ¹⁷ pieces / cm ³ or less,
The thickness of the high carrier concentration window layer at the initial stage of the n-type layer GaP growth is 0.1 μm to 10 μm, and the thickness of the low carrier concentration window layer after the initial stage of the n-type layer GaP growth is 125 μm ± 30 μm. It is characterized by that.

The n-type carrier concentration in the early stage of growth of the n-type layer GaP in the vicinity of the back side interface of the AlGaInP quaternary light-emitting layer is 9 × 10 ¹⁷ / cm ³ or more and 2 × 10 ¹⁸ / cm ³ or less, preferably 1. It is preferable that it is 1 × 10 ¹⁸ pieces / cm ³ or more and 1.5 × 10 ¹⁸ pieces / cm ³ or less.

The n-type carrier concentration of the n-type layer GaP after the initial growth of the n-type layer GaP on the back side of the AlGaInP quaternary light emitting layer is 3 × 10 ¹⁷ / cm ³ or more and 8 × 10 ¹⁷ / cm ³ or less, It is preferably 3.5 × 10 ¹⁷ pieces / cm ³ or more and 6 × 10 ¹⁷ pieces / cm ³ or less.

  A second aspect of the high-intensity light emitting diode of the present invention is an AlGaInP quaternary light emitting layer grown on a GaAs substrate and a light emitting light grown on the surface of the AlGaInP quaternary light emitting layer. A p-type window layer and an n-type GaP window layer for extracting emitted light that has been vapor-phase epitaxially grown on the back surface of the AlGaInP quaternary light-emitting layer lattice-matched to GaAs after etching the GaAs substrate. And when Vf on the GaAs substrate after growing a p-type window layer for extracting emitted light on the surface of the AlGaInP quaternary light emitting layer is Vf (p), the GaAs substrate is removed. Subsequently, an n-type window layer for extracting GaP emission light is vapor-phase epitaxially grown on the back surface of the AlGaInP quaternary emission layer lattice-matched to GaAs. n-type carrier concentration of the n-type window layer so that Vf (n) = Vf (total) −Vf (p) is 0.1 V ≦ Vf (n) ≦ 0.25 V where f is Vf (total) Is characterized in that ΔVf is low, high luminance and low luminance degradation.

A second aspect of the method for manufacturing a high-intensity light emitting diode according to the present invention is a method for manufacturing the high-intensity light emitting diode according to the second aspect of the present invention, on a GaAs substrate by metal organic chemical vapor deposition (MOCVD). A first step of growing an AlGaInP quaternary light emitting layer, a second step of growing a p-type window layer for extracting emitted light on the surface of the AlGaInP quaternary light emitting layer, and after the completion of the second step A third step of removing the GaAs substrate by etching, and a fourth step of vapor-phase epitaxially growing an n-type window layer for extracting GaP emitted light on the back surface of the AlGaInP quaternary light emitting layer lattice-matched to GaAs. In addition, Vf in the GaAs substrate after growing a p-type window layer for extracting emitted light on the surface of the quaternary light emitting layer of AlGaInP in the second step is defined as Vf (p) In this case, the GaAs substrate is removed in the third step, and an n-type window layer for extracting GaP emission light is formed on the back surface of the AlGaInP quaternary emission layer lattice-matched to GaAs in the fourth step. N-type window so that Vf (n) = Vf (total) −Vf (p) is 0.1 V ≦ Vf (n) ≦ 0.25 V when Vf in the state of phase epitaxial growth is Vf (total) By controlling the n-type carrier concentration of the layer , ΔVf is low, the luminance is high, and luminance deterioration is small .

  The high-intensity light-emitting diode of the present invention is a red high-intensity light-emitting diode that eliminates the occurrence of Vf high defects and has good life characteristics and high luminance. According to the first aspect of the method of the present invention, Luminance light emitting diodes can be manufactured with good yield and high productivity. According to the second aspect of the method of the present invention, it is possible to achieve an effect that a high-intensity light emitting lamp having no ΔVf high defect, which has been a problem with a bonded substrate, can be manufactured stably.

  DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below with reference to the accompanying drawings. However, the illustrated examples show preferred embodiments of the present invention, and various modifications can be made without departing from the technical idea of the present invention. Needless to say.

FIG. 1 is an explanatory view schematically showing an example of the process sequence of the first aspect of the method for producing a high-intensity light emitting diode of the present invention. FIG. 2 is a flowchart in the order of steps in FIG. FIG. 3 is a schematic explanatory view showing an example of the structure of the high brightness light emitting diode of the present invention.

As shown in FIGS. 1 and 2, in the first embodiment of the method of the present invention, an AlGaInP quaternary light emitting layer 12 is first grown on a GaAs substrate 10 by metal organic chemical vapor deposition (MOCVD) (FIG. 1). (A) First step, step 100 in FIG. A GaAs substrate 10 having a thickness of about 280 μm ± 10 μm is used. The thickness of the AlGaInP quaternary light emitting layer 12 is about 8 μm. Next, a p-type window layer 14 for extracting emitted light is grown on the surface of the AlGaInP quaternary light-emitting layer 12 by doping a p-type impurity such as Zn with a vapor phase epitaxial growth (VPE) reactor (FIG. 1). (B) Second step, step 102 in FIG. The carrier concentration of the p-type window layer 14 is about 6 × 10 ¹⁷ pieces / cm ³ or more and about 1.6 × 10 ¹⁸ pieces / cm ³ or less. The p-type window layer 14 is obtained by growing an AlGaAs, GaAsP or GaP layer to a thickness of 150 μm ± 30 μm. After the second step, the GaAs substrate 10 is removed by etching with a chemical solution such as sulfuric acid / hydrogen peroxide solution (FIG. 1 (c), third step, step 104 in FIG. 2). Subsequently, the back surface of the AlGaInP quaternary light emitting layer 12 lattice-matched to GaAs is doped with an n-type impurity such as Si, Te or S by a vapor phase epitaxial growth (VPE) reactor to extract GaP emitted light. The n-type window layer 16 is grown by vapor phase epitaxy (FIG. 1 (d), fourth step, step 106 in FIG. 2).

In the first aspect of the method of the present invention, in the fourth step, the n-type carrier concentration at the initial stage of the growth of the n-type layer GaP in the vicinity of the back side interface of the quaternary light emitting layer 12 of the AlGaInP is increased. For example, the n-type carrier concentration of the high carrier concentration window layer 16a in the early stage of growth of the n-type layer GaP near the back side interface of the AlGaInP quaternary light-emitting layer is 9 × 10 ¹⁷ pieces / cm ³ or more and 2 × 10 ¹⁸ pieces. / Cm ³ or less, preferably 1.1 × 10 ¹⁸ pieces / cm ³ or more and 1.5 × 10 ¹⁸ pieces / cm ³ or less. Further, the thickness of the high carrier concentration window layer 16a may be 0.1 μm to 10 μm, preferably about 1 μm to 5 μm.

Subsequently, the n-type carrier concentration of the n-type layer GaP after the initial growth of the n-type layer GaP is made lower than the n-type carrier concentration of the initial growth of the n-type layer GaP. For example, the n-type carrier concentration of the low carrier concentration window layer 16b after the initial growth of the n-type layer GaP on the back side of the AlGaInP quaternary light emitting layer is 3 × 10 ¹⁷ / cm ³ or more and 8 × 10 ¹⁷ / It is suitable that it is cm ³ or less, preferably 3.5 × 10 ¹⁷ pieces / cm ³ or more and 6 × 10 ¹⁷ pieces / cm ³ or less. The thickness of the low carrier concentration window layer 16b may be about 125 μm ± 30 μm.

As shown in FIGS. 1D and 3, the configuration of the high-intensity light emitting diode of the present invention was grown on the AlGaInP quaternary light emitting layer and the p-type layer side of the AlGaInP quaternary light emitting layer. A p-type window layer for extracting emitted light, and an n-type GaP window layer for extracting emitted light grown by vapor phase epitaxial growth on the back surface of the AlGaInP quaternary emitting layer lattice-matched to GaAs, The n-type carrier concentration in the initial growth stage of the n-type GaP window layer is high, for example, 9 × 10 ¹⁷ / cm ³ or more and 2 × 10 ¹⁸ / cm ³ or less, preferably 1.1 × 10 ¹⁸ / and cm ³ or more and 1.5 × ^{10 18} atoms / cm ³ or less, followed by n-type GaP window layer initial growth and subsequent n-type layer of GaP n-type carrier concentration of the n-type layer GaP initial growth of the n-type carrier Lower than the concentration, for example, 3 × 10 ¹⁷ pieces / cm ³ or more and 8 × 10 ¹⁷ pieces / cm ³ or less, preferably 3.5 × 10 ¹⁷ pieces / cm ³ or more and 6 × 10 ¹⁷ pieces / cm ³ or less, Vf and ΔVf are low, high luminance and low luminance deterioration.

  Next, a second embodiment of the method for manufacturing a high-intensity light emitting diode according to the present invention will be described with reference to FIGS. FIG. 4 is an explanatory view schematically showing an example of the order of steps in the second aspect of the method for producing a high-intensity light emitting diode of the present invention. FIG. 5 is a flowchart in the order of steps in FIG. In the first to third steps of the second aspect of the method of the present invention, the same steps as in the case of the first aspect of the method of the present invention are performed. That is, first, an AlGaInP quaternary light emitting layer 12 is grown on a GaAs substrate 10 by metal organic chemical vapor deposition (MOCVD) (FIG. 4A, first step, step 100 in FIG. 5). Next, a p-type window layer 14 for extracting emitted light is grown on the surface of the AlGaInP quaternary light-emitting layer 12 by doping a p-type impurity such as Zn with a vapor phase epitaxial growth (VPE) reactor (FIG. 4). (B) Second step, step 102 in FIG. After the second step, the GaAs substrate 10 is removed by etching with a chemical such as sulfuric acid / hydrogen peroxide solution (FIG. 4 (c), third step, step 104 in FIG. 5). Subsequently, the back surface of the AlGaInP quaternary light emitting layer 12 lattice-matched to GaAs is doped with an n-type impurity such as Si, Te or S by a vapor phase epitaxial growth (VPE) reactor to extract GaP emitted light. The n-type window layer 17 is grown by vapor phase epitaxial growth (FIG. 4D, fourth step, step 106A in FIG. 5).

  In the second aspect of the method of the present invention, the p-type window layer 14 for extracting emitted light is grown on the surface of the AlGaInP quaternary light emitting layer 12 in the second step, and then the GaAs substrate 12 is used. In the case where Vf is Vf (p), the GaAs substrate 12 is removed in the third step, and then, in the fourth step, GaP emission light is applied to the back surface of the AlGaInP quaternary light emitting layer lattice-matched to GaAs. Vf (n) = Vf (total) −Vf (p) is 0.1 V ≦ Vf (n) ≦ when Vf is Vf (total) in the state where the extraction n-type window layer 17 is grown by vapor phase epitaxial growth. By controlling the carrier concentration of the n-type window layer 17 to be 0.25 V, a high-luminance light-emitting diode with low ΔVf, high luminance, and little luminance deterioration is manufactured. It is.

  A high-intensity red lamp can be obtained by cutting the high-intensity light-emitting diode of the present invention into a chip and attaching an electrode to the chip to produce a red lamp.

  The present invention will be described in more detail below with reference to examples, but it is needless to say that these examples are illustrative and should not be construed as limiting.

(Example 1 and Comparative Example 1)
As shown in FIGS. 1 and 2, a 280 μm thick GaAs substrate was prepared, and an AlGaInP quaternary light emitting layer having a thickness of 8 μm was grown on the GaAs substrate by metal organic chemical vapor deposition (MOCVD). Next, Zn was doped by a VPE reactor on the surface of the AlGaInP quaternary light emitting layer to grow a p-type GaP window layer for extracting emitted light by 150 μm. After growing the p-type GaP window layer, the GaAs substrate was removed by etching with sulfuric acid / hydrogen peroxide solution. Subsequently, Te was doped on the back surface of the AlGaInP quaternary light emitting layer lattice-matched to GaAs by a VPE reactor to vapor-phase epitaxially grow an n-type window layer for extracting GaP light.

The n-type carrier concentration of the high carrier concentration window layer in the initial stage of the growth of the n-type layer GaP near the back side interface of the AlGaInP quaternary light emitting layer is 1.1 × 10 ¹⁸ / cm ^3, and the high carrier concentration window The layer thickness was 1 μm.

On the other hand, the n-type carrier concentration of the low carrier concentration window layer after the initial growth of the n-type layer GaP on the back side of the AlGaInP quaternary light emitting layer is 6.0 × 10 ¹⁷ / cm ^3, and the low carrier concentration The thickness of the window layer was 125 μm. The carrier concentration distribution of the n-type window layer of Example 1 was set to Comparative Example 1 (the carrier concentration of the n-type window layer was set to 1.0 × 10 ¹⁸ / cm ^3), and a light-emitting diode was manufactured in the same procedure as in Example 1. ) And FIG.

(Experimental example 1)
A light-emitting diode was produced in the same manner as in the example and its performance was confirmed. First, the relationship between the carrier concentration at the n-layer interface and ΔVf was examined, and the correlation between the two was shown as a graph in FIG. From the graph of FIG. 7, it can be seen that the carrier concentration at the n-layer interface is 9 × 10 ¹⁷ or more and ΔVf is 200 mV or less. Further, the relationship between Vf (total) −Vf (p layer) and ΔVf was examined, and the correlation between the two was shown as a graph in FIG. From the graph of FIG. 8, it can be read that ΔVf is 200 mV or less if 0.1 V ≦ Vf (n) ≦ 0.25 V. Further, the relationship between the carrier concentration at the n-layer interface and the life was examined, and the correlation between the two was shown as a graph in FIG. From the graph of FIG. 9, it can be read that the life is 94.5% or more if it is 2 × 10 ¹⁸ or less. Furthermore, the relationship between the carrier concentration and the output of the n-type gap after the initial growth of the n-type layer gap was examined, and the correlation between the two was shown as a graph in FIG. From the graph of FIG. 10, it can be seen that the output is 5 or more if it is 8 × 10 ¹⁸ or less.

  In the above examples and experimental examples, the carrier concentration was measured by CV measurement and SIMS measurement. Vf measured the forward voltage at the time of 20 mA energization with a well-known electrical property measuring machine. For Vf (total), a forward voltage at the time of energization of 20 mA was measured in a state where an n-type GaP window layer was formed using a known electrical property measuring instrument. The life was measured for the output (initial value) immediately after energization (energization current 20 mA) and the rate of change of output after 100 hours (measurement current 20 mA). The output was measured using a known electro-optical property measuring instrument for integrating sphere light output (unit: mW) when energized with 20 mA.

It is explanatory drawing which shows typically an example of the process order of the 1st aspect of the manufacturing method of the high-intensity light emitting diode of this invention. It is a flowchart of the order of the process of FIG. It is typical explanatory drawing which shows an example of the structure of the high-intensity light emitting diode of this invention. It is. It is explanatory drawing which shows typically an example of the process order of the 2nd aspect of the manufacturing method of the high-intensity light emitting diode of this invention. It is a flowchart of the order of the process of FIG. 6 is a graph showing carrier concentration distributions of an n-type window layer in Example 1 and Comparative Example 1. 6 is a graph showing the relationship between the carrier concentration at the n-layer interface and ΔVf in Experimental Example 1. 6 is a graph showing the relationship between Vf (total) −Vf (p layer) and ΔVf in Experimental Example 1; 6 is a graph showing the relationship between the carrier concentration at the n-layer interface and life in Experimental Example 1. 6 is a graph showing a relationship between an n-type gap carrier concentration and an output after an initial stage of n-type layer gap growth in Experimental Example 1;

Explanation of symbols

10: GaAs substrate, 12: quaternary light emitting layer of AlGaInP, 14: p-type window layer, 16, 17: n-type window layer, 16a: high carrier concentration window layer, 16b: low carrier concentration window layer.

Claims (2)

The AlGaInP quaternary light emitting layer grown on the GaAs substrate, the p-type window layer for extracting emitted light grown on the surface of the AlGaInP quaternary light emitting layer, and the GaAs substrate were removed by etching. And an n-type GaP window layer for extracting emitted light vapor-phase-epitaxially grown on the back surface of the AlGaInP quaternary light-emitting layer lattice-matched to GaAs. By increasing the n-type carrier concentration and subsequently lowering the n-type carrier concentration of the n-type layer GaP after the initial growth of the n-type GaP window layer to be lower than the n-type carrier concentration of the initial growth of the n-type layer GaP, Vf and ΔVf are lowered. A high-intensity light-emitting diode that is high-intensity and has little luminance degradation,
The n-type carrier concentration of the high carrier concentration window layer at the initial stage of the n-type layer GaP growth is 9 × 10 ¹⁷ pieces / cm ³ or more and 2 × 10 ¹⁸ pieces / cm ³ or less, and the n-type layer GaP growth initial stage. The n-type carrier concentration of the subsequent low carrier concentration window layer is 3 × 10 ¹⁷ pieces / cm ³ or more and 8 × 10 ¹⁷ pieces / cm ³ or less,
The thickness of the high carrier concentration window layer at the initial stage of the n-type layer GaP growth is 0.1 μm to 10 μm, and the thickness of the low carrier concentration window layer after the initial stage of the n-type layer GaP growth is 125 μm ± 30 μm. A high-intensity light-emitting diode. A method of manufacturing a high-brightness light-emitting diode having low Vf and ΔVf, high-brightness, and low luminance deterioration according to claim 1, wherein the AlGaInP 4 is formed on a GaAs substrate by metal organic chemical vapor deposition (MOCVD). A first step of growing an original light emitting layer, a second step of growing a p-type window layer for extracting emitted light on the surface of the quaternary light emitting layer of the AlGaInP, and the GaAs substrate after the second step is completed. A third step of removing by etching, and a fourth step of vapor phase epitaxial growth of an n-type GaP window layer for extracting emitted light on the back surface of the AlGaInP quaternary light emitting layer lattice-matched to GaAs, In four steps, the n-type carrier concentration at the initial stage of the growth of the n-type GaP window layer in the vicinity of the back side interface of the AlGaInP quaternary light emitting layer is increased, and then the initial growth of the n-type GaP window layer is performed. The n-type carrier concentration of the n-type layer of GaP descending so as to lower than the n-type carrier concentration of the n-type layer GaP initial growth,
The n-type carrier concentration of the high carrier concentration window layer at the initial stage of the n-type layer GaP growth is 9 × 10 ¹⁷ pieces / cm ³ or more and 2 × 10 ¹⁸ pieces / cm ³ or less, and the n-type layer GaP growth initial stage. The n-type carrier concentration of the subsequent low carrier concentration window layer is 3 × 10 ¹⁷ pieces / cm ³ or more and 8 × 10 ¹⁷ pieces / cm ³ or less,
The thickness of the high carrier concentration window layer at the initial stage of the n-type layer GaP growth is 0.1 μm to 10 μm, and the thickness of the low carrier concentration window layer after the initial stage of the n-type layer GaP growth is 125 μm ± 30 μm. A method for manufacturing a high-intensity light-emitting diode.

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