JP5313601B2 - Semiconductor device unit - Google Patents

Description

The present invention relates to a semi-conductor device unit.

  A semiconductor device such as a diode or a transistor is used as a so-called package mounted on a lead or a substrate, for example. In recent years, electronic devices have been downsized mainly in portable devices. Therefore, miniaturization of a semiconductor package on which a semiconductor device is mounted is desired.

  Conventionally, what was shown by patent document 1 as a semiconductor package is known. As shown in FIG. 17, the semiconductor package includes a semiconductor device 9A and a mold resin 97. The semiconductor device 9A includes a semiconductor chip 93, a base electrode 941, an emitter electrode 942, a collector electrode 943, leads 9d1 and 9d2, Au bumps 981 and 982, and a bonding wire 9w. The semiconductor chip 93 constitutes a bipolar transistor. The base electrode 941 and the emitter electrode 942 are disposed on the lower surface of the semiconductor chip 93 in the figure. The collector electrode 943 is disposed on the upper surface of the semiconductor chip 93 in the figure. The base electrode 941 is electrically connected to a lead (not shown) via the bump 981. The emitter electrode 942 is electrically connected to the lead 9d1 through the bump 982. The collector electrode 943 is electrically connected to the lead 9d2 by the bonding wire 9w. The mold resin 97 covers each component of the semiconductor device 9A.

  Since the semiconductor device 9A includes the bonding wire 9w, the mold resin 97 needs to have a size that can sufficiently cover the bonding wire 9w. Therefore, it has been difficult to reduce the size of the semiconductor package including the semiconductor device 9A.

JP 2001-60598 A

  The present invention has been conceived under the circumstances described above, and it is a main object of the present invention to provide a semiconductor device capable of reducing the size of a semiconductor package.

  A semiconductor device provided by the first aspect of the present invention includes a semiconductor substrate on which at least a part of a circuit element is formed, one or a plurality of surface electrodes disposed on the surface of the semiconductor substrate, and the semiconductor substrate. A semiconductor device comprising: a back electrode disposed on a back surface and electrically connected to the circuit element; wherein the one or more surface electrodes are electrically connected to the circuit element, the semiconductor device being disposed on the surface side And a conductive substrate supporting the semiconductor substrate, the front surface electrode, and the back electrode, and being electrically connected to the front surface electrode, and on the front surface side of the semiconductor substrate and the back surface side of the semiconductor substrate. And an exposed conductive portion.

  In a preferred embodiment of the present invention, the conductive portion penetrates the semiconductor substrate. According to such a configuration, it is not necessary to perform wire bonding in order to connect the circuit element to the external terminal. Therefore, there is no need to provide bonding wire pads on the semiconductor package on which the semiconductor device is mounted. This makes it possible to reduce the size of the semiconductor package.

  In a preferred embodiment of the present invention, an insulating portion penetrating the conductive portion is formed along a direction in which the conductive portion extends.

  In a preferred embodiment of the present invention, the semiconductor substrate includes a through hole formed along a direction in which the conductive portion extends, and an insulating film formed on the inner surface of the through hole. The insulating film coats the conductive part.

  In a preferred embodiment of the present invention, an external connection electrode that is electrically connected to the conductive portion is disposed on the back surface side, and the back electrode is in contact with the back surface of the semiconductor substrate. The energization area, which is the area of the energized portion of the contact portion between the electrode and the back surface, is larger than the area of the external connection electrode.

  In a preferred embodiment of the present invention, a bump that is electrically connected to the external connection electrode is disposed on the back surface side, and the bump and the conductive portion do not overlap in the in-plane direction of the semiconductor substrate. Are arranged as follows.

  In a preferred embodiment of the present invention, an extension electrode extending from the back surface side of the semiconductor substrate toward the surface of the semiconductor substrate and electrically connected to the front surface electrode or the back electrode, and the extension And a bump in contact with the output electrode. According to such a configuration, it is possible to increase the contact area between the bump and the electrode in contact with the bump while suppressing the semiconductor device from increasing in the width direction of the semiconductor device. Therefore, the value of the contact resistance between the electrode in contact with the bump and the bump can be reduced.

  In a preferred embodiment of the present invention, the semiconductor substrate further includes an external connection electrode disposed on the back surface side of the semiconductor substrate and in contact with the extension electrode and in contact with the bump. According to such a configuration, it is possible to further increase the contact area between the bump and the electrode that contacts the bump. Therefore, the value of contact resistance between the bump and the electrode that contacts the bump can be further reduced.

  In a preferred embodiment of the present invention, the conductive portion penetrates the semiconductor substrate, and the extension electrode is formed on a side surface of the semiconductor device and is different from the conductive portion. Yes.

  In a preferred embodiment of the present invention, an insulating portion penetrating the conductive portion is formed along a direction in which the conductive portion extends.

  In a preferred embodiment of the present invention, the extension electrode is formed on a side surface of the semiconductor device and serves as the conductive portion. According to such a configuration, it is not necessary to form the extended electrode different from the conductive portion. That is, it is not necessary to form the extension electrode at a position farther from the conductive portion in the width direction of the semiconductor device than a portion where the circuit element of the semiconductor device is configured. Therefore, the semiconductor device having a smaller size in the width direction can be provided.

  In a preferred embodiment of the present invention, the circuit element is a transistor, and two of the three electrodes connected to the transistor are the surface electrodes, and the other of the three electrodes. One is the back electrode.

  A semiconductor device unit provided by the second aspect of the present invention includes two semiconductor devices according to the first aspect of the present invention, and the surface electrode of the first semiconductor device which is one of these two semiconductor devices. The first and second semiconductor devices are stacked so that the back electrode of the second semiconductor device, which is the other of the two semiconductor devices, faces each other. A bonding ribbon which is fixed on the support substrate and is electrically connected to the conductive portion or the back electrode of the second semiconductor device is provided.

  According to such a configuration, it is not necessary to perform wire bonding for electrically connecting the conductive portion or the back electrode of the second semiconductor device to the outside of the semiconductor device unit. Therefore, even when the second semiconductor device is stacked on the first semiconductor device, it is not necessary to increase the size of the first semiconductor device in the surface direction of the support substrate.

  In a preferred embodiment of the present invention, the second semiconductor device is the semiconductor device according to claim 6, the bonding ribbon is bonded to the bump of the second semiconductor device, and The first semiconductor device is fixed on the support substrate.

  In a preferred embodiment of the present invention, the semiconductor device further includes an additional conductive portion penetrating the support substrate of the first semiconductor device, and the additional conductive portion is the surface electrode of the first semiconductor device. And the conductive part or the back electrode of the second semiconductor device, which is different from the conductive part or the back electrode, which is different from the conductive part connected to the bonding ribbon. According to such a configuration, the surface electrode of the first semiconductor device and the conductive portion or the back electrode of the second semiconductor device are directly conducted by the additional conductive portion. Therefore, there is no need to conduct the conductive part or the back electrode of the second semiconductor device, which is electrically connected to the additional conductive part, with the outside of the semiconductor device unit using the bonding ribbon or the like. Thereby, the number of the bonding ribbons provided in the semiconductor device unit can be reduced.

  In a preferred embodiment of the present invention, the support substrate of the second semiconductor device protrudes from the support substrate of the first semiconductor device in a plan view of the support substrate of the second semiconductor device. Have

  The semiconductor device unit provided by the third aspect of the present invention includes two semiconductor devices according to the first aspect of the present invention, the first semiconductor device being one of these two semiconductor devices, and these two semiconductor devices. A second semiconductor device that is the other of the two semiconductor devices is stacked, and the first and second semiconductor devices have the same intermediate substrate, the support substrate of the first semiconductor device, and the second semiconductor device. This is shared as the support substrate of the semiconductor device.

  According to such a configuration, it is not necessary to separately provide the support substrate of the first semiconductor device and the support substrate of the second semiconductor device. Therefore, the size of the semiconductor device unit in the thickness direction of the first or second semiconductor device can be reduced as compared with the case where the first and second semiconductor devices are simply stacked. Thereby, the semiconductor device unit can be made compact.

  In a preferred embodiment of the present invention, the intermediate substrate has an insulating property, and the intermediate substrate includes the front electrode or the back electrode of the first semiconductor device and the second semiconductor device. A conductive portion that penetrates the intermediate substrate and is electrically connected to the front electrode or the back electrode is provided. According to such a configuration, it is possible to reduce the number of wires that need to be provided in order to electrically connect the front surface electrode or the back surface electrode of the second semiconductor device to the outside of the semiconductor device unit.

  Other features and advantages of the present invention will become more apparent from the detailed description given below with reference to the accompanying drawings.

  Hereinafter, preferred embodiments of the present invention will be specifically described with reference to the drawings.

A first reference example of the present invention will be described with reference to FIGS.

FIG. 1 is a sectional view conceptually showing a semiconductor device A1 according to a first reference example of the present invention. In this reference example , a bipolar transistor is shown as the semiconductor device A1. The semiconductor device A1 includes a support substrate 1, an adhesive portion 2a, a protective insulating film 2b, a semiconductor substrate 3, front surface electrodes 41a and 41b, a back surface electrode 42, conductive portions 51a and 51b, external connection electrodes 52a and 52b, and insulating portions 61a and 61b. , 62a, 62b, and bumps 8 are provided. The surface electrode 41a is an emitter electrode, the surface electrode 41b is a base electrode, and the back electrode 42 is a collector electrode.

  The support substrate 1 is connected to the semiconductor substrate 3, the front surface electrodes 41a and 41b, the back surface electrode 42a, and the insulating portions 61a and 61b through an adhesive portion 2a made of resin and a protective insulating film 2b. As a result, the support substrate 1 supports the semiconductor substrate 3, the front surface electrodes 41 a and 41 b, the back surface electrode 42, the insulating portions 61 a, 61 b, 62 a and 62 b, and the bumps 8. The thickness of the support substrate 1 is about 500 μm. The support substrate 1 is made of glass. As the support substrate 1, a metal with good heat dissipation may be used.

The semiconductor substrate 3 includes an n-type semiconductor layer 30, a p-type semiconductor layer 31, an n-type semiconductor layer 32, an n-type semiconductor layer 33, and an insulating part 34. Transistors are formed on the semiconductor substrate 3 by these semiconductor layers. The circuit element referred to in the present invention is a bipolar transistor in this reference example . The thickness of the semiconductor substrate 3 is, for example, 100 μm or less, and preferably 30 μm or 40 μm. The size of the p-type semiconductor layer 31 in the x direction is, for example, 5 to 30 μm. The insulating portion 34 is formed on the inner surface of the through hole formed in the semiconductor substrate 3 and extending in the x direction. The insulating part 34 is an insulating film referred to in the present invention.

  The surface electrodes 41a and 41b are arranged on the upper surface of the semiconductor substrate 3 in the drawing (the surface of the semiconductor substrate in the present invention). The surface electrode 41a is electrically connected to the n-type semiconductor layer 30 and the conductive part 51a. The surface electrode 41a is insulated from the p-type semiconductor layer 31 and the n-type semiconductor layer 32 by the insulating portion 61a. Similarly, the surface electrode 41b is electrically connected to the p-type semiconductor layer 31 and the conductive portion 51b. The surface electrode 41b is insulated from the n-type semiconductor layer 32 by the insulating portion 61b. The surface electrodes 41a and 41b are covered and protected by a protective insulating film 2b made of, for example, SiN. In order to reduce the number of manufacturing steps, the adhesive portion 2a may be formed directly on the surface electrodes 41a and 41b without forming the protective insulating film 2b.

  The back electrode 42 is arranged on the lower surface of the semiconductor substrate 3 in the figure (the back surface of the semiconductor substrate in the present invention). The back electrode 42 is electrically connected to the n-type semiconductor layer 33.

The conductive portions 51a and 51b are formed so as to penetrate the semiconductor substrate 3 along the x direction. It can also be said that the conductive portions 51 a and 51 b are exposed on the front surface side of the semiconductor substrate 3 and the back surface side of the semiconductor substrate 3. The conductive parts 51a and 51b are cylindrical. Note that the shapes of the conductive portions 51a and 51b do not have to be circular when viewed in the x direction. For example, a square shape may be sufficient. Further, the conductive portions 51a and 51b may be conical cylinders. An insulating part 34 is formed around the conductive parts 51a and 51b. The insulating part 34 insulates the conductive part 51 a from the n-type semiconductor layers 32 and 33. Similarly, the insulating part 34 insulates the conductive part 51 b and the n-type semiconductor layers 32 and 33. Insulating portions 62a and 62b are formed inside the conductive portions 51a and 51b, respectively. The insulating parts 62a and 62b respectively penetrate the conductive parts 51a and 51b along the direction in which the conductive parts 51a and 51b extend (the x direction in this reference example ). Further, the insulating parts 62 a and 62 b insulate the conductive parts 51 a and 51 b from the back electrode 42.

  The external connection electrodes 52 a and 52 b are disposed on the back surface of the semiconductor substrate 3. The external connection electrode 52a is electrically connected to the conductive portion 51a, and the external connection electrode 52b is electrically connected to the conductive portion 51b.

The bump 8 is formed so that the semiconductor device A1 according to this reference example can be electrically connected to an external terminal. The bump 8 is electrically connected to the back electrode 42 or the external connection electrodes 52a and 52b. The bumps 8 are connected to a wiring board of a semiconductor package (not shown) to which the semiconductor device A1 is attached.

FIG. 2 shows a top view of the main part of the semiconductor device A1 shown in FIG. FIG. 3 is a bottom view of the main part of the semiconductor device A1 according to this reference example . In FIG. 2, the support substrate 1, the bonding portion 2a, the protective insulating film 2b, the surface electrodes 41a and 41b, and the insulating portions 61a and 61b shown in FIG. 1 are omitted for the sake of understanding. Similarly, in FIG. 3, the insulating portions 62a and 62b shown in FIG. 1 are omitted. 2 and 3, the conductive portion 51a 'corresponds to the conductive portion 51a shown in FIG. Similarly, the conductive part 51b ′ corresponds to the conductive part 51b. In FIG. 3, the back electrode 42 ′ corresponds to the back electrode 42 shown in FIG. Similarly, the external connection electrodes 52a ′ and 52b ′ correspond to the external connection electrodes 52a and 52b, respectively. Further, the bump 8 ′ corresponds to the bump 8.

As shown in FIG. 2, in this reference example , conductive portions 51 a ′ and 51 b ′ are formed in regions where wire bonding pads have been formed in the conventional semiconductor device. As shown in FIG. 1, the conductive portion 51a ′ is electrically connected to the surface electrode 41a which is an emitter electrode. Therefore, it is necessary for the conductive portion 51a ′ to pass a larger current than the conductive portion 51b ′ that is electrically connected to the surface electrode 41b that is the base electrode. For this reason, as shown well in FIGS. 2 and 3, three conductive portions 51a ′ and one conductive portion 51b ′ are formed. Of course, the combination of the numbers of the conductive portions 51a ′ and 51b ′ is not limited to this.

  As clearly shown in FIG. 3, the area of the back electrode 42 'is larger than the area of the external connection electrode 52a' or the external connection electrode 52b '. The bumps 8 'are arranged so as not to overlap the conductive portions 51a' or 51b '.

  A method for manufacturing the semiconductor device A1 will be described with reference to FIGS.

  First, as shown in FIG. 4, a semiconductor substrate 3 is formed by a known method. Then, insulating portions 61 a and 61 b and surface electrodes 41 a and 41 b are formed on the semiconductor substrate 3. Next, the protective insulating film 2b and the bonding portion 2a are formed on the upper surface of the surface electrodes 41a and 41b or the insulating portions 61a and 61b in the drawing.

Next, as shown in FIG. 5, the support substrate 1 is joined to the upper part of the bonding portion 2a in the figure. Next, as shown in FIG. 6, the lower part of the n-type semiconductor layer 33 in the semiconductor substrate 3 is ground. At this time, the thickness of the n-type semiconductor layer 33 is 500 to 800 μm. Without the support substrate 1, the thickness of the semiconductor substrate 3 needs to be 100 μm or more in order to prevent the semiconductor substrate 3 from being bent when the conductive portions 51 a and 51 b described below are formed. However, the semiconductor device A1 according to this reference example includes the support substrate 1. Therefore, even if the thickness of the semiconductor substrate 3 is 100 μm or less, for example, as thin as 30 μm, the semiconductor substrate 3 will not be bent when the conductive portions 51a and 51b are formed.

Next, as shown in FIG. 7, holes are formed from the lower part of the semiconductor substrate 3 in the figure. Then, on the inner surface of the hole and the lower surface of the n-type semiconductor layer 33 in the figure, an insulating portion 34 made of SiO ₂ is formed by, for example, an oxidation process. Next, as shown in FIG. 8, conductive portions 51 a and 51 b are formed on the surface of the insulating portion 34. Thereafter, the external connection electrodes 52a and 52b and the back electrode 42 are formed. Next, as shown in FIG. 9, insulating portions 62a and 62b are formed. Thereafter, the bumps 8 shown in FIG. 1 are formed, and the semiconductor device A1 is completed.

  Next, the operation of the semiconductor device A1 will be described.

According to this reference example, it is not necessary to perform wire bonding for connecting the semiconductor device A1 to the external terminal. Therefore, it is not necessary to cover the bonding wire with resin. Moreover, since the semiconductor device A1 includes the support substrate 1, the n-type semiconductor layer 33 can be made thinner than the conventional semiconductor device. Thereby, the semiconductor substrate 3 can be made thinner. As a result, the thickness of the semiconductor package on which the semiconductor device A1 is mounted can be further reduced. Further, since the n-type semiconductor layer 33 is thin, it is possible to reduce the resistance of the semiconductor device A1.

  Further, since it is not necessary to perform wire bonding, there is no need to provide pads for connecting bonding wires to the semiconductor package on which the semiconductor device A1 is mounted. Therefore, in the plan view of the semiconductor device A1, it is possible to reduce the size of the semiconductor package on which the semiconductor device A1 is mounted.

  Insulating portions 62a and 62b are filled inside the conductive portions 51a and 51b, respectively. Therefore, the conductive material used for forming the conductive portions 51a and 51b can be reduced. As a result, it is possible to reduce the manufacturing cost of the semiconductor device A1.

  As shown in FIG. 3, the area of the back electrode 42 'is larger than the area of the external connection electrode 52a' or the external connection electrode 52b '. Therefore, even if the external connection electrode 52a ′ and the external connection electrode 52b ′ are formed, the contact area between the back electrode 42 ′ and the n-type semiconductor layer 33 is greatly increased as compared with the case where these external connection electrodes are not formed. There is no need to reduce it. As a result, in the semiconductor device A1, the contact resistance between the back electrode 42 and the n-type semiconductor layer 33 can be kept low.

Heat generated in the semiconductor device A1 is conducted to the surface electrodes 41a and 41b, the conductive portions 51a and 51b, the external connection electrodes 52a and 52b, and the bumps 8. Thereafter, this heat is conducted to the semiconductor package and released to the outside. That is, in this reference example , the heat generated in the semiconductor device A1 can be easily released to the outside.

  The bump 8 is electrically connected to the conductive portions 51a and 51b via the external connection electrodes 52a and 52b. Therefore, the formation position of the bump 8 is not restricted by the position of the conductive portion 51a. That is, the formation positions of the bumps 8 can be freely determined according to the shape of the semiconductor package on which the semiconductor device A1 is mounted.

10 to 16 show other reference examples and embodiments of the present invention. In these figures, the Reference Example and the same or similar elements are denoted by the same reference numerals as the reference example.

A second reference example of the present invention will be described with reference to FIGS.

FIG. 10 is a cross-sectional view showing a semiconductor device A2 according to a second reference example of the present invention. In addition to the basic configuration of the semiconductor device A1, the semiconductor device A2 includes extended electrodes 53a and 53b, external connection electrodes 54a and 54b, and bumps 8a and 8b. Since the semiconductor device A2 is substantially bilaterally symmetric, the extension electrode 53a, the external connection electrode 54a, and the bump 8a formed on the left side of the semiconductor device A2 in the drawing will be described below. The following description can be similarly applied to the extended electrode 53b, the external connection electrode 54b, and the bump 8b formed on the right side of the semiconductor device A2.

  The extension electrode 53a is formed on the side surface (the left surface in the drawing) of the semiconductor device A2. The extension electrode 53 a extends from the back surface of the semiconductor substrate 3 toward the surface of the semiconductor substrate 3. The extension electrode 53a reaches the surface of the semiconductor substrate 3 and is in contact with the surface electrode 41a. Thereby, the extended electrode 53a is electrically connected to the surface electrode 41a.

  The external connection electrode 54a is disposed on the lower surface of the semiconductor substrate 3 in the figure. The external connection electrode 54a is in contact with the extension electrode 53a at the left end. The external connection electrode 54a is also in contact with the conductive portion 51a at the right end.

  As shown in FIG. 10, the bump 8a is in contact with the external connection electrode 54a and the extension electrode 53a from the vicinity of the right end of the external connection electrode 54a in the drawing to the vicinity of the upper end of the extension electrode 53a in the drawing. The bump 8a is formed so that the semiconductor device A2 can be electrically connected to an external terminal.

  A method for manufacturing the semiconductor device A2 will be described with reference to FIG.

The semiconductor device A2 is manufactured in substantially the same manner as described in the first reference example . Therefore, in the following, steps different from the manufacturing method of the semiconductor device A1 will be mainly described. First, the steps shown in FIGS. 4 and 5 are executed to manufacture the one shown in FIG. Next, as shown in FIG. 7, two holes are provided in the semiconductor substrate 3. Furthermore, in manufacturing the semiconductor device A2, another hole is formed in the semiconductor substrate 3. This hole is the hole h shown in FIG. Next, as shown in FIG. 11, extension electrodes 53 a and 53 b are formed inside the hole h. Thereafter, the external connection electrodes 54a and 54b and the like are formed to obtain the one shown in FIG. FIG. 11 differs from FIG. 8 in the presence or absence of the hole h and the extended electrodes 53a and 53b.

  Next, what is shown in FIG. 11 is cut along the line L so as to be divided by the hole h. Thereafter, the insulating portions 62a and 62b and the bumps 8a, 8b and 8c shown in FIG. 10 are formed. Thereby, the semiconductor device A2 is completed.

  Next, the operation of the semiconductor device A2 will be described.

  According to such a configuration, for example, the contact area between the external connection electrode 54a and the extension electrode 53a and the bump 8a can be increased while suppressing the semiconductor device A2 from increasing in the width direction of the semiconductor device A2. Therefore, the value of the contact resistance between the external connection electrode 54a and the extension electrode 53a and the bump 8a can be reduced. Further, since the contact area is large, the external connection electrode 54a and the extension electrode 53a can be firmly bonded to the bump 8a.

  In the figure, the extended electrodes 53a and 53b extend in the upward direction. Of course, the extending direction of the extending electrode according to the present invention is not limited to this. For example, the extension electrodes 53a and 53b may extend in an obliquely upward direction in the figure. The external connection electrodes 54a and 54b are not necessarily formed.

  Further, the extended electrode 53 a may not reach the surface of the semiconductor substrate 3. At this time, the extension electrode 53a may be electrically connected to the surface electrode 41a through the external connection electrode 54a and the conductive portion 51a.

A third reference example of the present invention will be described with reference to FIG.

In this reference example , the extended electrode 53a is the conductive portion 51a. Similarly, the extended electrode 53b serves as the conductive portion 51b. The extension electrodes 53a and 53b are formed on the side surface (left side or right side in the drawing) of the semiconductor device A3. The semiconductor device A3 can be manufactured in the same manner as the semiconductor device A2.

  According to such a configuration, it is not necessary to form an extended electrode different from the conductive portion 51a and the conductive portion 51b. That is, it is not necessary to form an extended electrode outside the conductive part 51a or the conductive part 51b. Thereby, the semiconductor device A3 that is small in the width direction can be provided.

A first embodiment of the present invention will be described with reference to FIGS. 13a and 13b.

FIG. 13 a is a perspective view of the semiconductor device unit according to the first embodiment of the present invention. In the semiconductor device unit B1 shown in the figure, the semiconductor device A1 shown in the first reference example is stacked. FIG. 13b conceptually shows a cross-sectional view of the semiconductor device unit shown in FIG. 13a. FIG. 13b shows two semiconductor devices A1a and A1b from the bottom of the semiconductor device A1 of the semiconductor device unit B1 shown in FIG. 13a.

  As shown in FIGS. 13a and 13b, the semiconductor device unit B1 includes a stacked semiconductor device A1a and a semiconductor device A1b. The semiconductor device A1a corresponds to the first semiconductor device according to the present invention. The semiconductor device A1b corresponds to a second semiconductor device according to the present invention. As shown in FIG. 13b, in the semiconductor device unit B1, the front surface electrodes 41a and 41b of the semiconductor device A1a and the back surface electrode 42 of the semiconductor device A1b face each other.

  The semiconductor device unit B1 includes a bonding ribbon w1 and a conductive portion 55.

  As shown in FIGS. 13a and 13b, the bonding ribbon w1 is a thin strip-shaped conductor. The bonding ribbon w1 is made of aluminum, for example. Although not shown, the bonding ribbon w1 is electrically connected to an external electrode of the semiconductor device unit B1. As shown in FIG. 13b, the bonding ribbon w1 is fixed on the support substrate 1 of the semiconductor device A1a. The bonding ribbon w1 is bonded to the bump 8a. Thereby, the bonding ribbon w1 is electrically connected to the conductive portion 51a of the semiconductor device A1b.

  The conductive portion 55 is formed on the support substrate 1 of the semiconductor device A1a and passes through the support substrate 1. The conductive portion 55 corresponds to the additional conductive portion referred to in the present invention. The conductive portion 55 is electrically connected to the surface electrode 41b of the semiconductor device A1a. The conductive portion 55 is electrically connected to the bump 8b of the semiconductor device A1b via the electrode d. Thereby, it can be said that the conductive part 55 is electrically connected to the conductive part 51b of the semiconductor device A1b. The bump 8b of the semiconductor device A1b is different from the bump 8a of the semiconductor device A1b that is electrically connected to the bonding ribbon w1. A bonding ribbon w2 is connected to the bump 8c of the semiconductor device A1b.

  According to such a configuration, it is not necessary to perform wire bonding for electrically connecting the bumps 8a, 8b, and 8c of the semiconductor device A1b to the outside of the semiconductor device unit B1. Therefore, even when the semiconductor device A1b is stacked on the semiconductor device A1a, it is not necessary to provide pads for wire bonding, and it is not necessary to increase the size of the surface of the support substrate 1 of the semiconductor device A1a. As a result, the space in the semiconductor package necessary for mounting the semiconductor device unit B1 can be reduced. In particular, it is suitable when the semiconductor device unit B1 is used as a discrete component.

  Further, according to the configuration described above, the position where the bonding ribbon w1 is formed on the support substrate 1 of the semiconductor device A1a can be freely determined by appropriately moving the position where the bump 8a of the semiconductor device A1b is formed.

  The surface electrode 41b of the semiconductor device A1a and the bump 8b of the semiconductor device A1b are directly connected by the conductive portion 55. Therefore, there is no need to conduct the bump 8b of the semiconductor device A1b with the outside of the semiconductor device unit B1 using the bonding ribbon w1 or the like. Thereby, the number of bonding ribbons w1 provided in the semiconductor device unit B1 can be reduced.

  In the semiconductor device unit B1, bonding ribbons w1 and w2 are also provided between the semiconductor device A1b and the semiconductor device A1c. The relationship between the semiconductor device A1b and the semiconductor device A1c is the same as the relationship between the semiconductor device A1a and the semiconductor device A1b described above.

In the present embodiment, the first and second semiconductor devices according to the present invention constitute a bipolar transistor that is the same circuit element. However, in the semiconductor device unit according to the present invention, the first semiconductor device and the second semiconductor device according to the present invention may constitute different circuit elements. Further, the semiconductor device A2 and the semiconductor device A1 according to the second reference example may be stacked.

  Further, in the plan view of the support substrate 1 of the semiconductor device A1b, the support substrate 1 of the semiconductor device A1b may have a portion protruding from the support substrate 1 of the semiconductor device A1a. For example, as shown in FIG. 14, the size in the width direction of the semiconductor device A1 in the semiconductor device unit B1 'may be gradually increased toward the top of the semiconductor device unit B1'. According to such a configuration, it is possible to suppress interference between the bonding ribbons w1 and between the bonding ribbons w2.

A second embodiment of the present invention will be described with reference to FIGS.

FIG. 15 conceptually shows a sectional view of a semiconductor device unit according to the second embodiment of the present invention.

The semiconductor device unit B2 shown in the figure has a configuration in which two semiconductor devices A1 shown in the first reference example are stacked. Of the semiconductor devices A1 in the semiconductor device unit B2, the one shown in the lower part of the drawing is the semiconductor device A1d. On the other hand, among the semiconductor devices A1 in the semiconductor device unit B2, the semiconductor device A1e is shown in the upper part of the drawing. The semiconductor device A1d corresponds to the first semiconductor device according to the present invention. The semiconductor device A1e corresponds to a second semiconductor device according to the present invention.

  As shown in FIG. 15, in the semiconductor device unit B2, the semiconductor device A1d and the semiconductor device A1e share the same intermediate substrate mb as the support substrate 1 of the semiconductor device A1d and the support substrate 1 of the semiconductor device A1e. ing.

  The intermediate substrate mb has an insulating property and includes a conductive portion 56. The conductive portion 56 penetrates the intermediate substrate mb. The conductive portion 56 is electrically connected to the surface electrode 41b of the semiconductor device A1d. The conductive portion 56 is also electrically connected to the surface electrode 41a of the semiconductor device A1e. The formation of the conductive portion 56 is not always necessary.

The bumps 8a, 8b, and 8c of the semiconductor device A1d are connected to a wiring board or the like of a package (not shown) to which the semiconductor device unit B2 is attached, as described in the first reference example . On the other hand, for example, bonding wires for connecting to the outside of the semiconductor device unit B2 are connected to the bumps 8a, 8b, and 8c of the semiconductor device A1e.

  Next, a method for manufacturing the semiconductor device unit B2 will be described.

First, the semiconductor device A1d is manufactured by the same method as that described in the first reference example . At this time, the support substrate 1 on which the conductive portion 56 has already been formed is used when the support substrate 1 of the semiconductor device A1d is attached.

Next, as shown in FIG. 16, the same one as shown in FIG. 4 is bonded to the surface of the support substrate 1 of the semiconductor device A1d. Next, the semiconductor device unit B2 is obtained by using a method similar to the method described in the first reference example , such as grinding the n-type semiconductor layer 33 of the semiconductor device A1e.

  Next, the operation of the semiconductor device unit B2 will be described.

  According to such a configuration, it is not necessary to separately provide the support substrate 1 of the semiconductor devices A1d and A1e. Therefore, the size of the semiconductor device unit B2 in the x direction can be reduced as compared with the case where the semiconductor devices A1d and A1e are simply stacked. Thereby, the semiconductor device unit B2 can be made compact.

  In addition, the number of wires that need to be provided in order to connect the front surface electrodes 41a and 41b and the back surface electrode 42 of the semiconductor device A1e to the outside of the semiconductor device unit B2 can be reduced.

  Also in the present embodiment, the first and second semiconductor devices according to the present invention are configured to constitute a bipolar transistor that is the same circuit element. However, in the semiconductor device unit according to the present invention, the first semiconductor device and the second semiconductor device according to the present invention may constitute different circuit elements.

  The scope of the present invention is not limited to the embodiment described above. The specific configuration of each part of the semiconductor device according to the present invention can be modified in various ways. For example, the circuit element referred to in the present invention is not limited to a bipolar transistor, and may be a MOSFET or the like. Further, a pn junction diode or a Schottky junction diode may be used. When the Schottky junction diode is formed, it can be said that a part of the circuit element is formed on the semiconductor substrate according to the present invention.

  In the thickness direction of the semiconductor device, the conductive portions may be arranged in a lattice pattern or in a staggered arrangement. According to such a configuration, the number of the conductive portions that can be formed in the same region can be increased in the thickness direction view. Thereby, the internal resistance of the whole said electroconductive part can be made small. Further, the contact resistance between the surface electrode and the conductive portion can be further reduced.

FIG. 2 conceptually shows a cross-sectional view of a main part of a semiconductor device according to a first reference example of the present invention. FIG. 2 is a top view of an essential part of the semiconductor device shown in FIG. 1. FIG. 2 is a bottom view of the main part of the semiconductor device shown in FIG. 1. FIG. 2 is a diagram showing a process of a method for manufacturing the semiconductor device shown in FIG. 1. FIG. 5 is a diagram illustrating a process following FIG. 4. FIG. 6 is a diagram showing a step following FIG. 5. FIG. 7 is a diagram showing a step following FIG. 6. FIG. 8 is a diagram showing a step following FIG. 7. FIG. 9 is a diagram illustrating a process following the process in FIG. 8. FIG. 3 conceptually shows a cross-sectional view of a main part of a semiconductor device according to a second reference example of the present invention. It is the figure which showed 1 process of the manufacturing method of the semiconductor device shown in FIG. FIG . 3 conceptually shows a cross-sectional view of a relevant part of a semiconductor device according to a third reference example of the present invention. 1 is a perspective view of a semiconductor device unit according to a first embodiment of the present invention. FIG. 13B conceptually shows a cross-sectional view of the semiconductor device unit shown in FIG. 13A. It is a perspective view of other examples of the semiconductor device unit concerning a 1st embodiment of the present invention. FIG. 3 conceptually shows a cross-sectional view of a semiconductor device unit according to a second embodiment of the present invention. FIG. 16 is a diagram showing a step of the method of manufacturing the semiconductor device unit shown in FIG. 15. It is principal part sectional drawing which shows the conventional semiconductor device.

A1, A2, A3, A1a, A1b, A1c, A1d, A1e Semiconductor devices B1, B1 ′, B2 Semiconductor device unit 1 Support substrate mb Intermediate substrate 2a Adhesive portion 2b Protective insulating film 3 Semiconductor substrates 30, 32, 33 N-type semiconductor Layer 31 P-type semiconductor layers 34, 61a, 61b, 62a, 62b Insulating portions 41a, 41b Front electrode 42 Back electrodes 51a, 51b, 51a ′, 51b ′, 55, 56 Conductive portions 52a, 52b, 52a ′, 52b ′, 54a, 54b External connection electrodes 53a, 53b Extension electrodes 8, 8 ', 8a, 8b, 8c Bump d Electrode h Hole x direction

Claims (6)

A semiconductor substrate on which at least a part of a circuit element is formed;
One or more surface electrodes disposed on the surface of the semiconductor substrate;
A back electrode disposed on the back surface of the semiconductor substrate and in electrical communication with the circuit element;
With
A semiconductor device in which one or more of the surface electrodes are electrically connected to the circuit element,
A support substrate disposed on the front surface side and supporting the semiconductor substrate, the front surface electrode, and the back electrode;
A conductive portion that is electrically connected to the surface electrode and exposed on the front surface side of the semiconductor substrate and the back surface side of the semiconductor substrate;
A portion located on the opposite side to the side where the front surface electrode is located with respect to the back surface electrode, and an insulating portion having a portion covering the back surface electrode,
A through hole is formed in the semiconductor substrate,
The conductive portion penetrates the semiconductor substrate and is formed along the through hole.
The insulating portion includes two semiconductor devices that cover the conductive portion and are filled in the through hole ,
The first and second electrodes are arranged so that the front electrode of the first semiconductor device, which is one of the two semiconductor devices, and the back electrode of the second semiconductor device, which is the other of the two semiconductor devices, face each other. A second semiconductor device is stacked;
A semiconductor device unit comprising a bonding ribbon fixed on the support substrate of the first semiconductor device and electrically connected to the conductive portion or the back electrode of the second semiconductor device . The second semiconductor device includes:
On the side of the back surface, an external connection electrode that is electrically connected to the conductive portion is disposed,
The back electrode is in contact with the back surface of the semiconductor substrate;
The energization area, which is the area of the energized portion of the contact portion between the back electrode and the back surface, is larger than the area of the external connection electrode,
On the back side, bumps that are electrically connected to the external connection electrodes are arranged,
A semiconductor device, wherein the bump and the conductive portion are arranged so as not to overlap in the in-plane direction of the semiconductor substrate,
The bonding ribbon, the second of said bump and is bonded semiconductor device, and the and is fixed to the first semiconductor device of said supporting substrate, the semiconductor device unit according to claim 1. An additional conductive portion penetrating the support substrate of the first semiconductor device;
This additional conductive part is
The surface electrode of the first semiconductor device;
The conductive part or the back electrode of the second semiconductor device, which is different from the conductive part connected to the bonding ribbon,
The semiconductor device unit according to claim 1, wherein both are electrically connected . In a plan view of the supporting substrate of the second semiconductor device, the above supporting substrate of the second semiconductor device has a portion protruding from the supporting substrate of the first semiconductor device, according to claim 1 to claim 3 The semiconductor device unit according to any one of the above. A semiconductor substrate on which at least a part of a circuit element is formed;
One or more surface electrodes disposed on the surface of the semiconductor substrate;
A back electrode disposed on the back surface of the semiconductor substrate and in electrical communication with the circuit element;
With
A semiconductor device in which one or more of the surface electrodes are electrically connected to the circuit element,
A support substrate disposed on the front surface side and supporting the semiconductor substrate, the front surface electrode, and the back electrode;
A conductive portion that is electrically connected to the surface electrode and exposed on the front surface side of the semiconductor substrate and the back surface side of the semiconductor substrate;
A portion located on the opposite side to the side where the front surface electrode is located with respect to the back surface electrode, and an insulating portion having a portion covering the back surface electrode,
A through hole is formed in the semiconductor substrate,
The conductive portion penetrates the semiconductor substrate and is formed along the through hole.
The insulating portion includes two semiconductor devices that cover the conductive portion and are filled in the through hole,
A first semiconductor device that is one of these two semiconductor devices and a second semiconductor device that is the other of these two semiconductor devices are stacked,
It said first and second semiconductor device, the same intermediate substrate, that share as the supporting substrate of the supporting substrate and the second semiconductor device of the first semiconductor device, the semiconductor device unit. The intermediate substrate has an insulating property,
The intermediate substrate is electrically connected to the front surface electrode or the back surface electrode of the first semiconductor device and the front surface electrode or the back surface electrode of the second semiconductor device, and is electrically conductive through the intermediate substrate. and a semiconductor device unit according to claim 5.

Images