JP5298189B2 - Vacuum deposition method and apparatus - Google Patents

Abstract

Disclosed is a deposition apparatus, which provides a uniform deposition film composed of a composite material, and which does not deteriorate a substrate due to heat generated by, for instance, a heater that evaporates the deposition material. The deposition apparatus is provided with: a container, which can maintain suitable environments for deposition, including a depressurized state; at least two deposition sources that evaporate different kinds of deposition materials; a nozzle, which is provided with a space wherein a mixed deposition material is formed by mixing the deposition materials, and which is provided in the container; pipes which can introduce the deposition materials from at least the two deposition sources to the nozzle, respectively; at least one opening, which is provided in the nozzle, and from which the mixed deposition material is jetted; a holding jig that holds the substrate, on which the mixed deposition material is to be deposited; and the heater which is provided on the nozzle and/or the pipes. The temperature of the inner wall of the nozzle and/or the pipes is kept not below the temperature at which the deposition materials continuously fly but not above the deposition temperature of the deposition materials.

Description

  The present invention relates to a vapor deposition apparatus, and more particularly, to a vapor deposition apparatus and a vapor deposition method using a plurality of types of vapor deposition materials.

  Conventionally, there has been a vapor deposition apparatus for evaporating a plurality of types of evaporation materials from a plurality of crucibles, and condensing these evaporation materials onto a member to be evaporated, but exclusively uses a carrier gas (for example, Patent Document 1 or 2). In such an apparatus, a first processing container and a second processing container are provided, and a vapor deposition source built in the second processing container is connected to a blower built in the first processing container via a connecting pipe. Is done. Each crucible as the deposition source is supplied with an inert gas (for example, Ar gas) from a gas supply source, and each film forming gas functions as a carrier gas that is carried to a blower through a connecting pipe. For this reason, the carrier gas is likely to remain in the deposited film, and there is a problem with the film quality, as well as equipment for supplying the carrier gas is required, and the apparatus is likely to be complicated and expensive.

  In addition, in order to form a uniform flow of vapor of the vapor deposition material, control the vapor distribution, and uniform vapor deposition, the vaporization material flows from the two separated vaporization chambers into the mixing chamber via the spool shutter, There has been disclosed a vapor deposition apparatus for vapor-depositing a vapor flow of an evaporating material mixed in a mixing chamber on a glass substrate through a perforated plate shutter and a perforated rectifying plate (for example, Patent Document 3). In the present invention, each of the evaporation chambers and the mixing chambers are only separated by the spool shutter and are in close positions, and the respective chambers are likely to be affected by each other and become close to each other. Therefore, it is impossible to manage each evaporation temperature as an appropriate ratio of evaporation amounts of vapor deposition materials. Further, the evaporation chamber, the spool shutter, and the mixing chamber are partitioned by walls heated by a plurality of heaters, and it is difficult to freely change the vapor flow of the vapor deposition material. Moreover, since the walls common to each other are provided, the wall temperatures of these chambers and members are likely to be high, and the glass substrate to be deposited is also close to them, so that it is easily affected by heat.

  Further, the temperature of the discharge amount of the different materials can be individually controlled, and the evaporation material is vapor-deposited on the glass substrate held in the vapor deposition container so that the component amount ratio of the film formed on the vapor deposition member is substantially uniform. In a vapor deposition apparatus, two evaporation containers for obtaining vaporized materials by heating different types of vapor deposition materials are provided, and a plurality of discharge holes for discharging the vaporized materials are provided in the vapor deposition containers. Provided with an evaporating material guide tube for guiding the evaporating material obtained in each evaporating vessel into the releasing vessel, and in the releasing hole formed in one releasing vessel, the other A device is disclosed in which discharge holes at the tip of a discharge nozzle projecting from a discharge container are arranged concentrically (for example, Patent Document 4). In this method, since the evaporation container is provided outside the evaporation container, it is difficult to be affected by the heat for evaporation, but there is no so-called mixing chamber, and the nozzles are also provided separately. Mixing is not easy.

  On the other hand, an organic substance storage unit comprising at least one organic substance storage for receiving an organic substance to be deposited on the substrate, an organic substance injection nozzle part for injecting an organic substance to be deposited on the substrate, an organic substance injection nozzle part and an organic substance storage part There is disclosed a vapor deposition apparatus including a connection line for connecting the two and a transfer device capable of moving at least an organic substance injection nozzle in the vertical direction (for example, Patent Document 5). However, in this vapor deposition apparatus, different types of vapor deposition materials cannot be mixed.

JP 2008-81778 A JP 2008-88490 A JP 2005-213570 A JP 2005-336527 A JP 2006-63447 A

  The present invention has been made in view of the above-described prior art, and an object of the present invention is to obtain a homogeneous vapor deposition film made of a composite material. Another object of the present invention is to provide a vapor deposition apparatus in which a vapor deposited substrate and a vapor deposited film are not deteriorated by heat generated from a heater or the like for evaporating a vapor deposition material.

  In the present invention, at least two vapor deposition sources for vaporizing different types of vapor deposition materials, a nozzle having a space in which these vapor deposition materials can be mixed, and each vapor deposition material can be introduced from the at least two vapor deposition sources to the nozzle. And a heater provided in at least one of the nozzle and the pipe provided in the nozzle, and provided in at least one of the nozzle or the pipe, the nozzle or Provided is a vapor deposition apparatus capable of maintaining the temperature of at least one of the inner walls of the pipe at or above the continuous flight temperature of each vapor deposition material and below the evaporation temperature of each vapor deposition material.

More specifically, it is as follows.
(1) A chamber having a depressurized internal space, at least two vapor deposition sources that contain vapor deposition material and vaporize the vapor deposition material, and a substrate that is provided in the chamber and is also disposed in the chamber A nozzle for injecting the vapor of the vapor deposition material, a pipe connecting the at least two vapor deposition sources and the nozzle, and a heater provided in at least one member of the nozzle and the pipe. Has a mixing chamber for mixing the vapors of the respective vapor deposition materials therein and at least one opening for injecting the mixed vapors toward the substrate on the surface of the nozzle. It is possible to provide a vapor deposition apparatus.

  Such a vacuum deposition apparatus includes a vacuum chamber, a plurality of crucibles, a nozzle provided in the vacuum chamber, a pipe connecting the plurality of crucibles and the nozzle, and a heater disposed at least in either the nozzle or the pipe. . The vacuum deposition apparatus may further include a substrate holder that supports or suspends the substrate. The nozzle has a mixing chamber inside, and one or more injection ports on the surface. The basic part of this apparatus is the basic structure of the apparatus consisting of a chamber, nozzles (multiple injection ports), piping, and a plurality of crucibles (or further mixing chambers), and heaters can be arranged in the nozzles and piping. Further, the nozzle may include a plurality of injection ports. “Vapor” as used herein refers to an evaporated molecule generated by vaporizing or sublimating the vapor deposition material. Further, “evaporation” does not mean in a narrow sense, but means general vaporization including sublimation.

(2) The vapor deposition apparatus according to (1), wherein each of the pipes is a flexible hose that can be bent, and further includes a moving unit that reciprocates the nozzle along the substrate. Can do.
Here, the reciprocating direction of the moving means may be any of a longitudinal direction, a short direction, and an oblique direction (diagonal direction) of the substrate.

  Each pipe may be a flexible hose. A means for moving the nozzle in the extending direction of the substrate may be provided. Moreover, you may integrate a flexible hose and a nozzle moving means. A nozzle moving mechanism can be provided. Further, examples of the flexible structure of the pipe include a bellows and a multi-joint. The crucible is preferably fixed, but may be movable. Details will be described later. The flexible hose functions as a transfer pipe. The type, specifications, and details of the tube connecting the crucible and the nozzle are determined according to the characteristics of the apparatus.

  As the flexible structure of the tube, any of a bellows structure, a multi-joint structure, and the like can be used. For example, in the case of the bellows structure, the inner wall of the pipe may be a curved surface (uneven) that periodically waves in the longitudinal direction instead of the cylindrical surface. Further, the pipe may have a multi-joint structure in which a plurality of short metal pipes are connected by a ball joint (spherical bearing or the like), for example. Various specific structures can be adjusted to suit the characteristics of the device. The flexible structure of the piping and the heater arrangement are as follows. The thickness of the pipe may be changed periodically with respect to the longitudinal direction of the pipe, but in that case, the heater arrangement is made periodic (rough / dense) or the heater arrangement interval is constant, and the heater heating temperature (for example, , Output) is preferably changed in the longitudinal direction of the pipe. Changing the heating temperature of the heater in the longitudinal direction of the pipe is also applicable when the thickness of the pipe is uniform in the longitudinal direction of the pipe. For example, the curved portion of the pipe is controlled to a high temperature and the straight portion is controlled to a low temperature. You may do it. The moving means may be an articulated robot arm (horizontal articulated robot). In this case, pipes may be passed through the arms and joints, or pipes may be placed outside the arms and joints. Further, the inside of the articulated robot arm itself may be used as piping. In this case, the object (movable object) to be directly moved by the articulated robot arm as the moving means may be a pipe or a nozzle. When the pipe has a multi-joint structure, a drive motor may be provided for each joint, each joint may be motor-controlled, and the pipe itself may have a moving mechanism (the pipe and the moving mechanism are integrated).

  In addition to the pipe structure, temperature control of the pipe may be important. Compared to the straight pipe, the bellows structure has a higher temperature retention (warming) than the straight pipe because the collision amount of molecules increases (that is, the energy of molecules decreases). Further, the heat retention is not particularly limited as long as it can prevent the outflow of energy of the evaporated molecules, and may be either direct heat retention or indirect heat retention. In addition, it is more preferable that the temperature of the inner wall of the pipe is close to the temperature of the evaporated molecules because the heat of the evaporated molecules is less likely to be taken away. Here, reference is made to the level of the pipe temperature, but it is also possible to define the amount of energy required for continuous flight of steam. The amount of energy can be controlled not only by the total amount of heat but also by the energy density of each part of the piping. For example, the heater distribution can be sparse or dense according to the location of the piping. The heater may be a resistance heating type heater such as a sheath heater, and may be an induction heating heater using a high frequency, an eddy current heater (IH heater), or the like. There are two types of induction heating patterns, and there are a case where the material (metal-based vapor deposition material) itself is induction heated and a case where the vapor deposition source (crucible) itself is induction heated.

  "Crucible fixation-movable nozzle-pipe flexibility" may be appropriately changed or selected according to various conditions. For example, any known technique can be applied to the size of the crucible, fixation to the vacuum chamber, connection to piping, and the like. The nozzle is fixed (supported, connected) to the moving means, but preferably has a fixed structure that does not unnecessarily escape the amount of heat applied from the heater. Further, the nozzle preferably has a fixed structure in which a nozzle heater can be easily attached. The flexibility of the piping may be appropriately selected in consideration of the distance of movement by the moving means, the speed of movement, the driving force for movement, and the like.

  Here, the “depressurized” state of “reducible pressure” means a pressure state lower than the atmospheric pressure. The chamber may include a member that constitutes a vacuum vessel or vacuum chamber (vacuum chamber) generally used in a vacuum apparatus, such as a bell jar. The vapor deposition source may include a crucible and may include a material that heats and vaporizes the vapor deposition material. The heating may include heating by a heater such as resistance heating, and any known heating means such as high frequency induction heating, laser, image furnace, electron beam, etc. can be used as appropriate. The pipe may have any shape including a cylindrical shape, but may include a pipe, a tube, or other conduit through which a fluid containing a gas can flow. Moreover, as piping, what contains the flexible pipe part which can be bent freely at least in part is preferable. The whole may be a flexible tube. The substrate may be held by a holding jig. The holding jig may be anything as long as it can hold the substrate, and may include a clasp, a hook, a nail, and other fixing members.

(3) Each vapor deposition source, each pipe, and the nozzle are each independently provided with a heater for heating the vapor deposition material and the vapor, and the pressure in each vapor deposition source, each pipe, and the nozzle. Control means for controlling the heating temperature by each heater, and for detecting the flow rate of each vapor deposition material evaporating from each vapor deposition source, which is disposed at a position close to each vapor deposition source. The vapor deposition apparatus according to the above (1) or (2), further comprising a detection means.

  You may provide the heater which heats a crucible individually. Moreover, you may provide the temperature control means which controls the pressure of a crucible, piping, and a nozzle. The heater may be three independent systems (a crucible, a flexible hose, and a nozzle). The heat retention of the bellows may depend on the hardware structure. You may control by crucible individual heating. Details of the control contents will be described later.

  Here, the control means may include any known control device, and examples include a sequencer, a microcomputer, a personal computer, and the like. When heated by the heater of the vapor deposition source, more vapor deposition material (substance) evaporates from the vapor deposition source and the pressure also rises. That is, by controlling the temperature of each evaporation source (for example, crucible) before mixing, the individual evaporation rate (evaporation amount) can be changed. And thereby, the target mixing ratio can be obtained in the film formation. Temperature control of each part of the piping is also important. Compared to a straight pipe, the bellows structure is more preferably kept at a high temperature because the amount of collision of molecules increases. Further, the heat insulation may be either direct heat insulation or indirect heat insulation. Here, although the temperature of various members is referred to, the magnitude of energy required for evaporation and reevaporation is important, and the amount of energy that can be applied increases as the temperature rises. Moreover, it is preferable to control not only the total amount of energy but also the energy density. Further, it is preferable that the three systems of the temperature of the vapor deposition source such as a crucible, the temperature of the inner wall of the nozzle, and the temperature of the inner wall of the tube can be controlled independently. Further, depending on the structure of the piping, the temperature may be changed depending on the location (for example, a straight line position and a curved line position).

(4) The vapor deposition apparatus according to (3), wherein the control unit controls the heating temperature of each vapor deposition source in real time based on the flow rate detected by the detection unit.

  In addition, the detection means detects the flow rate of each vapor deposition material (which may include simple substances, compounds, composites, and mixtures) evaporated from each vapor deposition source. A factor that affects the flow rate may be arranged at a position where feedback control is possible. For example, it can each be provided in discharge pipes, such as a vapor | steam extended from each vapor deposition source (for example, crucible). This flow rate can be considered as, for example, the amount of evaporation and / or the amount of movement (volume or weight) per unit time of the vapor deposition material that has become vapor or dispersed particles. The detection means includes a detection device, and a commonly used sensor can be used for the detection device. For example, a crystal sensor including a crystal oscillator or the like can be used. Based on the result of such detection means, the heating temperature of the vapor deposition source can be controlled on the spot. For example, when the evaporation rate of any evaporation source is low in pre-deposition before the actual production, the evaporation rate can be adjusted to a desired evaporation rate by increasing the temperature of the evaporation source. Further, during the vapor deposition operation, if the evaporation rate from any vapor deposition source is low / high, adjustment is possible by increasing / decreasing the temperature of the vapor deposition source.

(5) The at least two vapor deposition sources are arranged outside the chamber, and the vapor deposition materials are arranged in the middle of the pipes connecting the vapor deposition sources arranged outside the chamber and the chamber. The vapor deposition apparatus according to any one of (1) to (4) above, wherein an ON / OFF valve for turning ON / OFF the flow of the vapor is provided.

  The crucible may be placed outside the vacuum chamber. The crucible can be taken out. In addition, the shape of the valve is not particularly limited as long as it can be turned on and off. A gate valve (gate valve), a globe valve, a ball valve, a butterfly valve, a needle valve, a stop valve, a check valve (reverse) Stop valve) or the like.

  Arrangement outside the chamber may include that the heat of the evaporation source does not reach the nozzle. Moreover, you may include that a connection part with the said container is limited. The limitation may include, for example, being connected to a pipe protruding from the container.

(6) The vapor deposition apparatus according to (3) above, wherein the control unit controls each of the heaters independently.

  The control means can perform independent heating control of three systems.

(7) The vapor deposition apparatus according to (3), wherein the control unit independently controls the heater of each vapor deposition source to evaporate each vapor deposition material at a predetermined evaporation rate. Can do.

  The control means can control the temperature of the crucible. That is, the temperature of each crucible is heated above the evaporation temperature of the vapor deposition material, and the evaporation rate (evaporation amount) of each vapor deposition material is measured in real time by a sensor, and the measured values are fed back to the control means to feed back each crucible. The temperature of each vapor deposition material is controlled so as to obtain a desired evaporation rate by controlling the temperature. By mixing the vapors of the respective vapor deposition materials whose temperature is controlled, a vapor deposition film (film formation) having a target mixing ratio can be obtained. The “evaporation temperature” here refers to a temperature at which the vapor deposition material evaporates (vaporizes). The “evaporation rate” indicates the amount of vapor that evaporates per unit time. The valve may be an ON / OFF valve that controls ON / OF. For example, when the valve is provided in a crucible placed outside the chamber, exchange of the vapor deposition material (crucible change) becomes easy. Valves that can be turned on and off at high temperatures are preferred.

  As a control feature, a sensor is provided in each tube before mixing, the evaporation rate is measured, and a target mixing ratio is obtained as a result of film formation deposited on the substrate. Here, the evaporation rate of each material that evaporates (concepts including vaporization and sublimation) from each crucible is measured by a sensor (such as a crystal monitor) provided in each pipe that leads to the crucible. The material evaporated in each crucible is mixed in the mixing chamber of the nozzle, and comes out of the nozzle and reaches the substrate to form a film. Here, if the nozzle and the pipe are maintained at the continuous flight temperature or higher, each vapor does not theoretically adhere and remain on the inner walls of the nozzle and the pipe. By controlling the temperature of the material in this way, the film formation mixture ratio matches the ratio of the material evaporation rate (evaporation amount) measured by the sensor in each pipe, that is, the target mixture ratio. become. Furthermore, the value of the sensor in the vicinity of the pipe is fed back to the temperature control of the crucible, so that the film forming mixture ratio can be accurately controlled. In this case, temperature management above the continuous flight temperature of the nozzle and piping is a necessary condition. The term “continuous flight temperature” as used herein means that vapor (evaporated molecules) can fly continuously without being deposited (fixed) on the wall surface, that is, without losing the energy given by the crucible. Indicates temperature.

  The heating control is preferably controlled by three systems: a crucible, a nozzle, and a pipe. About a crucible, piping, and a nozzle, a heater may be independently arrange | positioned at each of a crucible, piping, and a nozzle so that temperature control may be performed independently. The crucible heater is controlled at a temperature (T01 (> T0)) slightly higher than the evaporation temperature T0 so that the material can be evaporated at the target evaporation rate. The heater of the pipe is controlled to a temperature (T11 (> T1)) slightly higher than the continuous flight temperature T1 at which the material gas can continuously fly. The heater of the nozzle is controlled to a temperature (T21 (> T2)) slightly higher than the continuous flight temperature T2 ejected from the opening, allowing the mixed vapor in the mixing chamber to fly without being deposited on the inner wall of the nozzle. Further, depending on the structure of the pipe, the temperature may be changed depending on the location in the longitudinal direction of the pipe (for example, between a straight line position and a curved line position). Therefore, the heaters may be controlled independently or depending on the location of the heater.

(8) The said control means controls the said heater of each said flexible hose independently, and heats and keeps each said flexible hose to the temperature more than the continuous flight temperature of a steam over the longitudinal direction. The vapor deposition apparatus as described in said (3) can be provided.

  The control means can perform temperature control in the circumferential direction and the longitudinal direction of the flexible hose. In addition, the flexible hose can be kept warm (controlled above the continuous flight temperature).

(9) The control means controls the heater of the nozzle independently to heat and keep the nozzle above the continuous flight temperature of the steam having the lowest continuous flight temperature among the mixed steam. The vapor deposition apparatus described in (3) above can be provided.

  The control means can control the temperature of the nozzle. In addition, the temperature of the nozzle can be kept (controlled above the continuous flight temperature).

(10) The above (1), wherein the nozzle is a cylindrical member, the pipe is connected to the nozzle, and a plurality of the openings are provided along a longitudinal direction on a peripheral surface of the nozzle. Can be provided.

  The shape of the nozzle is cylindrical, and pipes can be connected to both end faces. Moreover, a plurality of injection ports can be provided on the cylindrical surface of the nozzle. Thus, the nozzle can have a mixing function depending on the shape. This mixing function can vary with more detailed shapes. The shape of the nozzle and the pipe mounting position may be “cylindrical and facing surfaces”, but may be other shapes. Moreover, a partition plate etc. can be provided in a nozzle.

  Here, it is preferable that the opening is in a direction substantially perpendicular to the above-described substrate that is a member to be coated. Moreover, it is preferable that the axial direction of the nozzle which is a cylindrical member is substantially parallel with respect to the board | substrate mentioned above. Therefore, it is preferable that when the nozzle and the substrate are moved in parallel, the substrate substantially contacts the outer peripheral surface of the cylinder. The opening is preferably provided along a tangent line formed by contact between the outer peripheral surface of the cylinder and the substrate, and is preferably disposed near the center in the axial direction of the cylindrical member.

(11) A merging pipe that conducts merging steam obtained by joining the vapors of the first vapor deposition material and the second vapor deposition material is connected to one end face of the nozzle, and a pipe that conducts the vapor of the third vapor deposition material. The vapor deposition apparatus according to any one of (1) to (10) above, which is connected to the other end surface of the nozzle.

  A pipe joining the first crucible and the second crucible can be connected to one end face of the nozzle. Moreover, the piping of the third crucible can be connected to the other end surface of the nozzle. In this way, mixing with three or more types of crucibles can be performed.

(12) At least two vapor deposition sources for containing and evaporating the vapor deposition material, respective pipes connected to the respective vapor deposition sources and conducting the vapor of the respective vapor deposition materials, and these pipes are connected. A mixing chamber capable of mixing vapors of the respective vapor deposition materials, a nozzle having an opening for injecting the mixed vapor, and a flow rate of each vapor deposition material evaporated from the respective vapor deposition sources. And using a vapor deposition apparatus having a detection means provided at a position close to each vapor deposition source in a decompressed space, the vapors of the vapor deposition materials of the same type or different types are mixed. When spraying onto the substrate and depositing on the substrate as a mixed vapor deposition film, the respective vapor deposition sources are heated and controlled so that the vapors of the respective vapor deposition materials have a predetermined evaporation rate or a state corresponding thereto. The flow rate of each vapor deposition material detected by the detection means is controlled by heating the pipes and / or the inner wall of the nozzle so as to be equal to or higher than the continuous flight temperature of each vapor and below the evaporation temperature of each vapor deposition material. Based on the above, the heating temperature of each vapor deposition source is adjusted and controlled, the vapor of each vapor deposition material is supplied into the mixing chamber, the vapors are uniformly stirred and mixed, and the mixed vapor is substantially supplied from the opening. In this case, a mixed vapor deposition film can be formed on the substrate by spraying the substrate as a parallel flow without diffusion.

  A plurality of crucibles, pipes connected to each crucible, the pipes are connected to each other, a mixing chamber is provided, and a nozzle for injecting the mixed vapor is used for each of the vapor deposition apparatuses housed in the vacuum chamber. The crucible is heated and controlled so that the vapor deposition material has a constant evaporation rate, and the nozzle and / or pipe are heated and controlled above the continuous flight temperature and below the evaporation temperature, and are stirred and mixed uniformly in the mixing chamber. It is possible to provide a vacuum vapor deposition method for spraying and forming a mixed vapor deposition film.

  Further, in the case where a plurality of types of vapor deposition materials having different evaporation temperatures or evaporation rates are used, the respective vapor deposition sources may be maintained at or above the vaporization temperature of the respective vapor deposition materials. On the other hand, it is preferable that the temperature of the inner wall of each pipe is maintained at a temperature equal to or higher than the continuous flight temperature of each vapor and equal to or lower than the evaporation temperature of each vapor deposition material. On the other hand, it is preferable that the inner wall of the nozzle be kept above the lowest continuous flight temperature among the continuous flight temperatures of each steam.

  As described above, a vapor deposition source for evaporating different types of vapor deposition materials, a nozzle having a space for mixing these vapor deposition materials and an opening capable of jetting the mixed vapor deposition materials, and flowing the vapor deposition materials from the vapor deposition source to the nozzles According to the vapor deposition apparatus provided with the pipe capable of being mixed, it is possible to uniformly mix the same type or different types of vapor deposition materials. A uniform film can be formed by performing film formation using a mixed material that is uniformly mixed.

It is a partial cross section schematic diagram of the vapor deposition apparatus of the Example of this invention. It is a partial see-through | perspective side schematic diagram of the vapor deposition apparatus of the Example of this invention. It is the schematic of the vapor deposition apparatus of another Example of this invention. It is a control schematic diagram of the vapor deposition apparatus of another Example of this invention. FIG. 6 is a partially cutaway perspective view of a nozzle that can be used in yet another embodiment of the present invention. It is a schematic model diagram of the vapor deposition apparatus of another Example of this invention. It is a schematic diagram of the vapor deposition apparatus of another Example of this invention. In the Example of this invention, it is a partial see-through | transparent side schematic diagram of the vapor deposition apparatus provided with the moving apparatus different from FIG. 1B. In the Example of this invention, it is a partial see-through | perspective schematic perspective view of the principal part of the vapor deposition apparatus provided with another example of a moving apparatus. In the Example of this invention, it is a schematic perspective view which shows the positional relationship of the nozzle in a vapor deposition apparatus provided with another example of a moving apparatus, and a board | substrate.

  Next, embodiments of the present invention will be described with reference to the drawings. In the drawings, components having the same configuration or function and corresponding parts are denoted by the same reference numerals, and description thereof is omitted. Moreover, in the following description, the example of the embodiment which concerns on this invention is shown, and it can change suitably based on the technical common sense of those skilled in the art, without exceeding the range of this invention. Therefore, the scope of the present invention is not limited to these specific examples. Also, these drawings are emphasized for the purpose of explanation, and may differ from actual dimensions.

  1A and 1B are a partial cross-sectional schematic view and a partially transparent side schematic view of a vapor deposition apparatus that is an embodiment of the present invention. The vapor deposition apparatus 10 of the present embodiment includes a chamber 12 that can be depressurized by a vacuum pump (for example, a cryopump) (not shown), and a vapor deposition source 14 for the vapor deposition material A and a vapor deposition source 16 for the vapor deposition material B. Is provided. These vapor deposition sources 14 and 16 are connected to pipes 18 and 20 through which vaporized vapor deposition materials (vapors) flow, respectively, and these pipes 18 and 20 include flexible pipe portions 18a and 20a on the distal end side, respectively. . These flexible tube portions 18a and 20a are connected to the left and right end surfaces (bottom surface and top surface) of the cylindrical nozzle 22 provided in the chamber 12, and face the mixing chamber 24 which is a space in the nozzle 22. Inflow. Thus, the vapors of the vapor deposition materials A and B are mixed without any particular stirring, and stay in the mixing chamber 24 as a mixed vapor of A + B. From one or more (four in FIG. 1A) openings 26 opened in the side surface portion (circumferential surface portion) of the cylindrical nozzle 22 to the surface of the substrate (deposited member) 28 installed facing the nozzle 22. The mixed steam is injected. The opening 26 is disposed on the peripheral surface of the nozzle 22 at a position facing the substrate 28. When a plurality of substrates 28 are provided in the chamber 12, the openings 26 are provided at positions facing the respective substrates 28 of the nozzle 22. The substrate 28 is supported in the chamber 12 by the substrate holder 29. The substrate 28 may be supported by any one of bottom surface support, side end surface support, top surface adsorption support, and suspension support. The vapors of the vapor deposition materials A and B and the mixed vapor (mixed vapor) flow like a molecular flow when flying (flowing) through the pipes 18 and 20 and the nozzle 22. The flexible tube portions 18a and 20a are not necessarily connected to the left and right end surfaces of the nozzle 22, but one tube portion is an end surface, the other tube portion is a side surface portion, both tube portions are side surface portions, and You may make it connect both a pipe part to one end surface.

  Around the vapor deposition sources (for example, crucibles) 14 and 16, heaters 30a and 30b are disposed, and the vapor deposition materials A and B are heated by the heaters 30a and 30b to a temperature higher than the above-described temperature. The vapor deposition materials A and B may be either the same type of material or different types of materials. Here, as an example of using the same kind of materials as the vapor deposition materials A and B, when using a vapor deposition material having a temperature restriction (a vapor deposition material that cannot be heated to a very high temperature), the evaporation rate of the vapor deposition material is increased (increased), etc. Is mentioned. When the evaporation temperatures of the vapor deposition materials A and B are different, the heaters 30a and 30b can be controlled separately and set to the most preferable temperature. The vapors of the vapor deposition materials A and B are dispersed in the internal spaces of the respective vapor deposition sources 14 and 16 and flow toward the pipes 18 and 20 (directions indicated by arrows in FIG. 1A). At this time, the internal pressure of the vapor deposition sources 14 and 16 is set to be at least higher than the internal pressure in the chamber 12, and the heating temperature is adjusted according to the type of the vapor deposition material, so that the vapors of the vapor deposition materials A and B can be obtained. The pressure is adjusted as appropriate. Here, the crucible as a vapor deposition source may be connected to pipes 18 and 20 provided so as to protrude from the chamber 12. If the crucible is directly connected to the chamber 12, heat accompanying the crucible heating may be conducted to the chamber 12. Therefore, it is more preferable to provide the crucible outside the chamber 12 and connect it to the pipes 18 and 20. The nozzle 22 may be fixed by being connected to the pipes 18 and 20, or may be fixed by another fixing jig. The nozzle 22 may be fixed to moving means described later. It is preferable that the pipes 18 and 20 have flexibility because the pipes 18 and 20 do not interfere with the movement of the nozzle 22 by the moving means.

  As the pipes 18 and 20, pipes conventionally used as pipes for fluids are applicable, but it is particularly preferable that the pipes 18 and 20 are at least partially provided with flexible pipe portions 18a and 20a. Further, the entire pipes 18 and 20 may be flexible pipes. Heaters 32a and 32b are arranged around the pipes 18 and 20, and the temperature of the inner walls of the pipes 18 and 20 is adjusted to be equal to or higher than the respective continuous flight temperatures. This continuous flight temperature is lower than the respective evaporation temperatures of the vapor deposition sources 14 and 16, and the thermal effect on the nozzle 22 and the substrate 28 is small. Further, since the vapor deposition sources 14 and 16 are installed outside the chamber 12, radiant heat (main heat transfer in a vacuum state) is blocked by the wall of the chamber 12, and heat that reaches the nozzle 22 and the substrate 28. The impact is small. Here, the inner wall may mean a wall that can contact when the fluid flows through the nozzle or the pipe.

  Each of the pipes 18 and 20 is connected to a wall surface of the nozzle 22 (in the present embodiment, an end surface, which can also be a circumferential surface). The volume of the mixing chamber 24 of the nozzle 22 is set to be sufficiently larger than the total evaporation amount per unit time of vapor of each vapor deposition material flowing through each pipe. Thereby, each vapor introduced into the mixing chamber 24 is sufficiently stirred and mixed uniformly.

  The mixed vapor sufficiently mixed in the nozzle 22 is injected from the opening 26 due to the pressure difference between the internal pressure of the nozzle 22 and the internal pressure of the chamber 12, and the mixed vapor is applied to the deposition surface of the substrate 28 (the lower surface in FIG. 1A). A vapor deposition film is formed. A sensor 36 made of a crystal oscillator as a film thickness monitor is provided at a position not buffered on the deposition surface of the substrate 28 and at a position facing the deposition surface. By this film thickness monitor, the injection amount (attachment amount), the attachment speed, etc. of the mixed steam are measured in real time. Here, the sensor 36 made of a crystal oscillator measures the film thickness of the deposited film, and does not perform feedback control of the evaporation rate of each vapor based on the measurement data.

  A nozzle heater 34 is provided so as to cover at least a part of the outer periphery of the nozzle 22. By this nozzle heater 34, the inner wall of the nozzle 22 is heated to a temperature equal to or higher than the continuous flight temperature of the vapor deposition material and lower than the evaporation temperature. If the vapor deposition materials A and B have different continuous flight temperatures, it is preferable to heat the inner wall of the nozzle 22 in accordance with the continuous flight temperature of the vapor deposition material having a lower continuous flight temperature.

  Further, a moving means 35 is provided that is connected to the nozzle 22 and is movable in the longitudinal direction of the substrate 28 (vertical direction in FIG. 1B) in the chamber 12. In this embodiment, the moving means 35 is realized by a ball screw. The ball screw serving as the moving means 35 preferably includes a screw 35a extending in the moving direction of the nozzle 22, a bearing portion 35b which supports the screw 35a at both ends and is rotatably supported by a driving device (for example, a motor) (not shown), and the nozzle 22. And a support 35d that locks the rotation of the nut portion 35c and a nut portion 35c that moves in the axial direction of the screw as the screw 35a rotates. By such moving means 35 and piping (with flexible pipe portions 18a and 20a) 18, 20, the nozzle 22 can be scanned in the longitudinal direction of the substrate 28, and a vapor deposition film can be formed on the entire surface of the substrate 28. . The moving means 35 is not limited to the ball screw of this embodiment, and the nozzle 22 may be movable in the plane direction of the substrate 28 (longitudinal direction, width direction, or diagonal direction). For example, as shown in FIG. 7, the moving device 40 that moves (scans) the nozzle has a cylinder body 52 arranged outside the chamber 12, and a flange to which an internal rod 44 that supports the nozzle 22 by the tip is fixed. The external rod 48 that supports the portion protrudes from the cylinder main body 52 side through the opening in the lower wall of the chamber to the inside of the chamber 12, and the nozzle 22 is moved (scanned) by sliding the external rod 48 by driving the cylinder. A bellows 46 is provided so as to surround the external rod between the tip of the external rod 48 on the chamber 12 side and the opening of the chamber wall, and the inside of the bellows 46 with the external rod 48 (external rod 48 side) is in an atmospheric state. The chamber 12 side is kept in a reduced pressure state. The external rod 48 also serves as a guide when the nozzle 22 moves, but a guide mechanism may be provided separately. In addition to the cylinder, a rack and pinion can be used as the drive source. Only one moving mechanism may be provided so that the support portion at the tip of the inner rod 44 is disposed at the center of the nozzle 22, but one moving mechanism may be provided at the end of the inner rod 44 or two at both ends. By adopting the above structure and arrangement, the main part of the drive mechanism, such as the drive source and the sliding part, is arranged outside the chamber 12 to contribute to the reduction of the chamber size, and the chamber including the sliding part is also included. By disposing in the atmospheric condition outside 12, it is possible to prevent dust and the like from entering the chamber. 7 shows a structure in which the bellows protrudes inside the chamber, but a structure in which the bellows protrudes outside the chamber is also possible.

  The vapors of the vapor deposition materials A and B scattered from the vapor deposition sources 14 and 16 are guided to the nozzle 22 through the pipes 18 and 20. Here, the nozzle 22 connected to the pipes 18 and 20 functions as a header. That is, the inside of the nozzle 22 becomes each vapor mixing chamber (manifold) 24, and after each vapor is stirred and mixed in the mixing chamber 24, the mixed vapor is jetted from the opening 26 of the nozzle 22 and deposited on the substrate 28. A film is deposited (co-evaporated) to form a film. Here, the mixed vapor sprayed onto the substrate 28 is obtained by uniformly mixing multi-component vapor deposition material vapor, and the uniformly mixed multi-component vapor deposition material vapor is sprayed onto the substrate 28 in a unified manner. . When the mixing chamber 24 has a sufficient volume, the flow of the mixed vapor injected from each opening 26 is a flow that proceeds in a straight direction from the opening 26 toward the substrate, but at an angle from the straight direction. It becomes a flow having a width or a flow that is hardly diffused (hereinafter referred to as “straight flow”). If the intervals between the openings 26 are short, the flows of the mixed vapor injected from the openings 26 overlap each other, and the film thickness of the deposited film formed on the substrate 28 is the overlap of the films in the direction in which the openings 26 are aligned. Leveled by Therefore, a vapor deposition film having a uniform thickness can be formed on the substrate 28 by using a compound in which each vapor deposition material is uniformly combined at a desired composition ratio.

  Further, the evaporation amount (scattering amount) of each vapor in the pipes 18 and 20 is measured by sensors 21a and 21b provided in the pipes 18 and 20 as detection means. The sensors 21a and 21b measure, for example, the evaporation rate (evaporation amount per unit time) of each vapor. In FIG. 1A, these sensors 21a and 21b are provided near the joint with the nozzle 22, but the attachment positions of the sensors 21a and 21b on each pipe are far from the nozzle and close to the crucible (evaporation source). Cases can also be assumed. Moreover, you may arrange | position in both positions. By placing each sensor closest to its own evaporation source and farthest from the other evaporation source, it is easier to control the material as a single unit without mixing. As such a sensor, for example, it is possible to use a measuring device that utilizes the fact that a vibration characteristic is changed by attaching a coating film on a quartz oscillator. The pipes 18 and 20 are not directly connected to each other (joined connection), and the pipes 18 and 20 are connected to the nozzle 22, respectively. For this reason, when measuring the vapor | steam evaporation amount of the vapor deposition material A (or B) in the sensor 21a (or 21b) in the piping 18 (or 20), the vapor deposition material B (or A) from the piping 20 (or 18). ) Vapor splashing is not affected. As a result, the amount of scattering of each vapor can be accurately measured by the sensors 21a and 21b. At this time, in the sensor 21a (or 21b), in order to reduce the influence of scattering of steam that is not a measurement target, the volume of the mixing chamber 24 is sufficiently large compared to the flow rate per unit time of each steam, The length of the nozzle 22 (the distance between the connection ports of the pipes 18 and 20) only needs to be long enough. Since each steam introduced into the mixing chamber 24 is randomly scattered, by configuring the nozzle 22 in this way, the steam supplied to the nozzle 22 from the pipe 18 (or 20) is randomly scattered and the nozzle There is almost no possibility of vapor reaching the pipe 20 (or 18) by colliding with the inner wall of 22. Therefore, the mixing (mixing) of each vapor in the mixing chamber 24 is performed at a high level.

  Further, in the nozzle 22, the pipe 18 is arranged so that the supply direction of each steam to the nozzle 22 (left-right direction in FIG. 1A) and the injection direction of the mixed steam from the nozzle 22 (upward direction in FIG. 1A) are different. , 20 and the opening position of the opening 26 are provided. As a result, stirring and mixing of each vapor in the mixing chamber 24 is further enhanced. The supply direction of each steam and the injection direction of the mixed steam are preferably orthogonal. The configuration of the vapor deposition source, piping, and the like when three or more types of vapor deposition materials are used is shown in a schematic schematic view in FIG. Since the basic structure is the same as in FIG. 1A, only the different parts will be described. The vapor deposition source 14 for the vapor deposition material A, the vapor deposition source 16 for the vapor deposition material B, and the vapor deposition source 15 for the vapor deposition material C are respectively provided. It is provided outside the chamber (not shown). A pipe 20 extends from the vapor deposition source 16 and is connected to the nozzle 22. On the other hand, a pipe 18 extends from the vapor deposition source 14 and is connected to the mixing tank 23, and a pipe 19 extends from the vapor deposition source 15 and is connected to the mixing tank 23. Thereby, the vapor deposition materials A and C are mixed in advance, and the mixed vapor deposition material is connected to the nozzle 22 through the pipe 19 a extending from the mixing tank 23. In this way, in the nozzle 22, the mixed material of the vapor deposition materials A and C (or the bonding material AC in which some chemical bond or the like is generated) and the vapor deposition material B are mixed. Further, the merging pipe 17 may be simply provided without providing such a mixing tank (see FIG. 6). For example, a merging pipe that conducts the merged vapor obtained by merging the vapors of the first vapor deposition material and the second vapor deposition material is connected to one end surface (for example, the left end surface in FIG. 1A) of the nozzle 22, A pipe (see FIG. 6) for conducting vapor of the vapor deposition material is connected to the other end surface of the nozzle 22 (for example, the right end surface in FIG. 1A). Here, since the vapor deposition source 15 of the vapor deposition material C is added to the vapor deposition apparatus of FIG. 1A and 1B, the Example of FIG. 6 demonstrates only a different part.

  A heater 30c is disposed around the added vapor deposition source 15 and is heated to a temperature higher than the temperature at which the vapor deposition material C evaporates, but can be controlled independently of the heaters 30a and 30b. The vapor of the vapor deposition material C is dispersed in the internal space of the vapor deposition source 15 and flows toward the pipe 19. At this time, the internal pressure of the vapor deposition source 15 is set to be at least higher than the internal pressure in the chamber 12, and the vapor pressure of the vapor deposition material C is appropriately adjusted by adjusting the heating temperature according to the type of the vapor deposition material. Is done. As the pipe 19, a pipe conventionally used as a pipe for fluid is applicable, but it is particularly preferable to provide a flexible pipe part at least partially. Further, the entire pipe 19 may be a flexible pipe. A heater 32c is disposed around the pipe 19 and is adjusted so that the temperature of the inner wall of the pipe 19 is equal to or higher than the continuous flight temperature of the vapor deposition material C. This continuous flight temperature is lower than the evaporation temperature of the vapor deposition material C of the vapor deposition source 15. Further, since the vapor deposition source 15 is installed outside the chamber 12, radiant heat (main heat transfer in a vacuum state) is blocked by the wall of the chamber 12, and the thermal effect on the nozzle 22 and the substrate 28 is not affected. Few. Pipes 18 and 19 extending from the vapor deposition sources 14 and 15 are connected to two entrances of the junction pipe 17 described above. Thereby, the vapors of the vapor deposition materials A and C are mixed first. In addition, each flow sensor 21a and 21c is arrange | positioned before connecting to this joining piping 17. FIG. The outlet of the joining pipe 17 is connected to the nozzle 22, and the mixed vapor of the vapor deposition materials A and C is introduced into the mixing chamber 24 in the nozzle 22. With this configuration, when the vapor deposition materials A and C are first mixed and have some bonds (including chemical bonds) to each other, the vapor deposition material B is mixed with such a mixture (or bond). In other words, it is possible to selectively prevent only the deposition materials A and B from being bonded (or reacted). This merging pipe 17 can also be provided with a heater, and the temperature can be controlled in the same manner as the other pipes 18, 19, and 20.

  As described above, the mixing ratio of the mixed vapor sprayed from the nozzle 22 can be accurately controlled to a desired ratio, and the deposited film formed on the substrate 28 can be accurately controlled to the desired composition ratio.

  The vapor deposition apparatus of the invention according to this embodiment can also be applied to the deposition of an organic EL vapor deposition film. In organic EL, in recent years, the demand for larger substrates has increased, and as a result, high productivity (higher film formation speed) is required for the organic EL thin film to be formed. Homogeneity (film quality and film thickness must be uniform over the entire film surface).

  Therefore, the vapor deposition apparatus according to the present embodiment does not inject the mixed vapor in the form of dots from the nozzle 22 to the substrate 28, but injects the mixed vapor in a line shape from the plurality of openings 26 (injected linearly). ) For this reason, the vapor deposition apparatus of the invention according to the present embodiment can cope with an increase in the deposition rate of the organic EL thin film.

  Further, as described above, the vapor deposition apparatus of the invention according to the present embodiment is provided with a sufficiently large volume of the mixing chamber 24 of the nozzle 22 and jets a sufficiently uniform mixed vapor from the opening 26 to the substrate 28. It is made to evaporate. For this reason, the vapor deposition apparatus of the invention which concerns on a present Example can respond to the homogenization of an organic EL thin film.

  On the other hand, a flexible substrate may be used as the organic EL substrate 28. Since this flexible substrate is made of resin, there is a problem that it is vulnerable to heat.

  Therefore, in the vapor deposition apparatus according to the present embodiment, vapor deposition sources 14 and 16 that are heated to a high temperature are disposed outside the chamber 12. Since the heating temperature of the pipes and nozzles is low and sufficient as compared with the vapor deposition sources 14 and 16, the vapor deposition apparatus of the invention according to this example is compared with the conventional apparatus in which the vapor deposition source is arranged in the chamber. The thermal influence on the substrate 28 can be reduced. Thereby, the thermal influence with respect to the board | substrate 28 and the vapor deposition film vapor-deposited on the board | substrate 28 also decreases. Therefore, there is little possibility that thermal degradation will occur in the substrate 28 (for example, flexibility will be impaired), and there is little possibility that thermal degradation will occur in the deposited film (a high quality deposited film can be obtained).

  Further, since the vapor deposition sources 14 and 16 and the substrate 28 are physically and thermally blocked by the chamber 12, the vapor deposition sources 14 and 16 are more than necessary to avoid the thermal influence of the vapor deposition sources 14 and 16 on the substrate 28. There is no need to increase the distance between the chamber 12 and the chamber 12, and it is sufficient if the minimum required piping length is provided. Therefore, in the vapor deposition apparatus according to the present embodiment, although the vapor deposition sources 14 and 16 are arranged outside the chamber 12, the vapor deposition source-substrate distance (TS distance) can be kept relatively short. .

  Further, as described above, in the vapor deposition apparatus according to the present embodiment, since the injection source is the nozzle 22 and the temperature of the nozzle 22 is lower than the vapor deposition sources 14 and 16, the crucible is used as the injection source. The distance between the injection source and the substrate can be shortened as compared with a conventional apparatus that directly injects from the crucible to the substrate. For this reason, it is possible to reduce the material loss of the mixed vapor (ratio of the mixed vapor not deposited on the substrate) between the injection source and the substrate. The ability to shorten the distance between the injection source and the substrate also contributes to shortening the TS distance. Further, the temperatures of the pipes 18 and 20 and the nozzle 22 are controlled by the control device 102 so as to be not less than the continuous flight temperature and not more than the evaporation temperature, that is, controlled so that the inner walls of the pipes 18 and 20 and the nozzle 22 do not stick. Therefore, the material loss of the mixed vapor (ratio of the mixed vapor not deposited on the substrate) can also be reduced by this. From these, the vapor deposition apparatus of the invention according to the present embodiment can use the material with high efficiency, and can reduce the material cost.

  Further, by disposing the vapor deposition sources 14 and 16 outside the chamber 12, the size of the chamber with respect to the large substrate can be made relatively small (compact).

  In FIG. 2, the outline of the vapor deposition apparatus which is another Example is illustrated. Members common to those in FIG. 1 are denoted by the same reference numerals, and redundant description is omitted. In the vapor deposition apparatus 100 according to this embodiment, a cryopump (vacuum pump) 120 is connected to the chamber 12 via a pipe 140. A chamber valve 142 is provided in the middle of the pipe 140. Further, as described above, the inside of the chamber 12 is evacuated by the cryopump 120 via the pipe 140 and the chamber valve 142. In this embodiment, the pipes 18 and 20 are respectively connected to both end faces of the nozzle 22, but the vapor of each vapor deposition material is supplied to the mixing chamber 24 as a straight flow (straight flow). Instead, it is supplied to the mixing chamber 24 as a swirl flow swirling along the inner wall of the nozzle 22. In this way, by supplying the vapor of each vapor deposition material to the mixing chamber 24 as a swirl flow, the stirring effect between the vapors is further enhanced. Further, on the pipes 18 and 20, on / off valves (ON / OFF valves) 130 and 132 capable of ON / OFF of the flow rate are arranged. By closing these valves 130 and 132, the respective vapor deposition sources 14 and 16 can be exchanged without breaking the vacuum in the chamber 12, which is convenient.

  FIG. 3 is a schematic diagram showing a monitor and control system. The vapor deposition apparatus 100 </ b> A can be controlled by one or more control apparatuses (which may include a monitor apparatus) 102. The control device 102 monitors the temperature of the vapor of each vapor deposition material, while the heater A (30a) and the heater B (30b) of the crucible as the vapor deposition source, and the pipes 18 and 20 (the flexible pipe portions 18a and 20a). The heater A (32a), the heater B (32b), and the nozzle heater 34 are controlled, and the vapor temperature of each vapor deposition material is controlled to the optimum temperature as described above. The vapor evaporation rate of each vapor deposition material can be changed by adjusting the amount of heat (or holding temperature) applied to the vapor deposition sources 14 and 16 of the vapor deposition materials A and B exclusively while monitoring the sensor. By such temperature (or amount of heat) control, each vapor is adjusted to a desired mixing ratio in the nozzle 22 to obtain a uniformly mixed vapor, and a mixed vapor deposition material is applied to the surface of the substrate 28 as a target. A homogeneous vapor deposition film is formed. Thus, each vapor can be evaporated at a desired evaporation rate by measuring the evaporation rate of each vapor with the sensors 21a and 21b and feeding back to the temperature control of each vapor deposition source. Accordingly, the mixing ratio of the vapor deposition materials A and B can be obtained as the target mixing ratio by independently controlling the evaporation rate of each vapor before mixing. Whether the actual mixing ratio is achieved can be verified by analyzing the components of the film attached to the sensor 36 using an analyzer (not shown). As described above, when the vapor deposition sources 14 and 16 are exchanged, after the on / off valves 130 and 132 are tightened, the vapor deposition sources 14 and 16 to be exchanged are removed, and new vapor deposition sources 14 and 16 are attached. Thereafter, the on / off valves 130 and 132 are opened again, and control is performed so that vapor deposition can be performed with a new vapor deposition material. When opening the chamber 12 itself, the chamber 12 is opened after the chamber valve 142 is closed. After the chamber 12 is closed, the chamber valve 142 is opened and the inside of the chamber 12 is evacuated again.

  FIG. 4 shows a partially broken perspective view of a nozzle that can be used in this embodiment. The nozzle 22 having a substantially cylindrical shape is connected to the left and right end faces (or the bottom face and the top face) with pipes made of flexible pipes 18a and 20a. As can be seen from the distal end of the flexible tube 20a, the flexible tube 20a is not joined to the right end surface of the nozzle 22 so as to face the mixing chamber 24 of the nozzle 22, but to the mixing chamber 24. It is joined in a state of passing through. Further, the distal end of the flexible tube 20a is fixed so as to vortex along the inner wall in the mixing chamber 24 of the nozzle 22. Similarly, the tip of the flexible tube 18a (not shown) is fixed in the mixing chamber 24 of the nozzle 22 so as to vortex along the inner wall of the nozzle 22. If it does in this way, the stirring effect of the vapor | steam of each vapor deposition material supplied from the flexible pipes 18a and 20a will increase more. Further, at least one diffusion plate (baffle plate) 25 may be disposed on the inner wall of the nozzle 22. The diffusion plate 25 can further enhance the stirring effect between the vapors of the respective vapor deposition materials. The diffuser plate 25 is preferably arranged at a position surrounding the opening 26, whereby the vapor of each vapor deposition material supplied to the mixing chamber 24 becomes difficult to be jetted from the opening 26 without being sufficiently mixed. It becomes easier to mix the steam. Openings 26 and 27 are provided on the peripheral surface of the nozzle 22, and four openings 26 are perforated on the back side in the drawing, and another four openings 27 are formed at positions facing the openings 26 (cylindrical and facing surfaces). (Only two are shown in FIG. 4) are drilled. In this way, by providing the openings 26 and 27 for injecting the mixed vapor deposition material at two opposing positions on the peripheral surface of the nozzle 22, simultaneously with respect to the substrate 28 disposed on both sides of the nozzle 22, and , Uniform deposition can be performed. The direction, number and size of the openings 26 and 27 opened in the nozzle 22 can be appropriately determined according to the flow rate of the vapor deposition material from the vapor deposition sources 14 and 16 to be supplied.

  FIG. 8 is a partial perspective schematic perspective view of the main part 10a of the vapor deposition apparatus provided with still another example of the moving apparatus in the embodiment of the present invention. Here, the vacuum chamber 12 shown transparent, a glass substrate 28a (also shown as transparent) placed horizontally in the upper part of the vacuum chamber 12, and a cylindrical shape under the glass substrate 28a are shown below. A nozzle 22 having a plurality of openings whose directions are arranged substantially parallel to the glass substrate 28a and capable of spraying paint or the like upward, a flexible hose 18a composed entirely of a flexible tube connected to both ends of the nozzle, and a nozzle A moving device 60 comprising a plate-like beam 62 for fixing 22 and an LM guide 64 for movably supporting both ends thereof is depicted. For other components not depicted, the apparatus is configured in the same manner as in FIGS. 1A and 1B, but is omitted here for simplicity. Unlike the vapor deposition apparatus of FIG. 1A and 1B or 7, in this apparatus, the glass substrate 28a is placed horizontally, and the nozzle 22 moves horizontally below the glass substrate 28a, whereby a predetermined mixed vapor deposition film is formed on the lower surface of the glass substrate 28a. It is formed. The nozzle 22 is adiabatically fixed to a beam 62 supported at both ends by a LM guide (Linear Motion Guide) 64 that is placed in parallel and horizontally in the vacuum chamber 12 so as to be separated in the width direction. ing. The flexible hose 18a connected to both ends of the nozzle 22 is supported by a support member (not shown) simply so as not to hang down. The beam 62 slides on the LM guide by the drive source 13 of the moving device 60. This drive source may be in the vacuum chamber 12, but is disposed outside the vacuum chamber here. Examples of such a moving device 60 include a vacuum linear slider and a slider driven by a driving source 13 such as a cylinder or a ball screw.

  The flexible hose 18a may be a bellows type or a type in which straight pipes are jointed (multi-joint type). Further, as a method of supporting (guide) the flexible hose 18a when the nozzle 22 moves, the flexible hose 18a (or via a bellows) is accommodated in the cable bear and is placed along the LM guide 64, and the nozzle 22 A system in which the tip of the cable bear moves along the LM guide 64 along with the movement may be used. By using the flexible hose 18 a connected to both ends of the nozzle 22, different or similar vapor deposition materials can be guided to the nozzle 22. Since the flexible hose 18a can be expanded and contracted, when the moving device 60 is operated and the beam 62 moves horizontally in the extending direction of the glass substrate 28a (left and right direction in the figure), the flexible hose 18a moves in accordance with the movement of the nozzle 22. 18a is expanded and contracted. That is, the flexible hose 18 a that is a pipe follows the movement of the nozzle 22. Or you may make it move the flexible hose 18a with the supporting member which supports them. At this time, it is more preferable that the beam 62 is placed and supported on the upper surface of the LM guide 64. Here, an example in which the glass substrate 28a is arranged on the upper side is shown, but the glass substrate 28a is arranged on the lower side upside down, and the upper side of the glass substrate 28a is moved horizontally by the nozzle 22 moving in the extending direction. A vapor deposition film may be formed.

  FIG. 9 is a schematic perspective view showing the positional relationship between the nozzle 22 and the glass substrate 28a in the vapor deposition apparatus provided with another example of the moving apparatus in the embodiment of the present invention. Unlike the case of FIG. 8, here, the glass substrate 28a is arranged vertically. The flexible hose 18 a is connected to both ends of the nozzle 22, and different kinds or the same kind of vapor deposition materials can be led to the nozzle 22. Here, the moving device is not particularly shown, but a moving device similar to or different from that shown in FIG. 8 can be provided. With this moving device, the nozzle 22 moves upward and / or downward in parallel with the glass substrate 28a to form a vapor deposition film on the glass substrate 28a. The flexible hose 18a can be expanded and contracted, and a tensile resistance can be provided like a helical spring by memorizing the shape in a contracted state. Therefore, even if it is a case where it moves up and down with a moving apparatus, the flexible hose 18a can be expanded-contracted without dripping.

  As described above, according to the present invention, a plurality of types of vapor deposition materials can be uniformly mixed, and a homogeneous mixed vapor deposition film can be formed on the substrate over the entire surface of the substrate. In addition, the crucible which is a vapor deposition source and is heated to a high temperature is disposed outside the chamber, and the nozzle disposed in the chamber is sufficient at a heating temperature lower than that of the crucible. In addition, the thermal effect on the substrate can be suppressed. Incidentally, the mixed vapor of the vapor deposition material can be injected from the opening by the pressure difference between the internal pressure in the nozzle (internal pressure in the mixing chamber) and the pressure outside the nozzle (internal pressure in the chamber). Further, by adjusting the position of the opening formed in the nozzle, the injection direction of the mixed steam can be freely determined. Note that although physical vapor deposition is mainly described here, chemical vapor deposition may be used, and mixing may include a chemical reaction between vapor deposition materials.

10, 100, 100A Vapor deposition apparatus 12 Chamber 14, 15, 16 Vapor deposition source 17 Merge pipe 18, 19, 20, 122, 124, 140 Flexible hose (pipe)
21a, 21b, 21c, 36 Sensor 22 Nozzle 23 Mixing tank 24 Mixing chamber 25 Diffusion plate 26, 27 Opening 28 Substrate 28a Glass substrate 30a, 30b, 30c, 32a, 32b, 32c, 34 Heater 35, 40, 60 Moving device ( 102) Control device 120 Cryo pump 126, 128, 130, 132, 142 Valve

Claims (12)

A chamber having an internal space capable of decompression;
At least two vapor deposition sources containing vapor deposition material and vaporizing the vapor deposition material;
A nozzle that is provided in the chamber and sprays vapor of the vapor deposition material onto a substrate that is also disposed in the chamber;
Piping connecting the at least two vapor deposition sources and the nozzle, respectively;
A heater provided on at least one member of the nozzle and the pipe;
Moving means for reciprocating the nozzle along the substrate ,
Each of the pipes is a flexible hose that can be bent;
The nozzle has a mixing chamber for mixing the vapors of the respective vapor deposition materials therein, and
The nozzle of the cylindrical member has at least one opening on its peripheral surface for injecting the mixed vapor toward the substrate ,
The vapor deposition apparatus , wherein the pipe is connected to both end faces of the nozzle . The vapor deposition apparatus according to claim 1, wherein the moving unit is an LM guide that reciprocates the nozzle in parallel along the vapor deposition surface of the substrate. Each vapor deposition source, each pipe, and the nozzle are each independently provided with a heater for heating the vapor deposition material and the vapor,
Control means for controlling the heating temperature by each heater so as to control the pressure in each vapor deposition source, each pipe, and the nozzle;
3. A detection means for detecting a flow rate of each vapor deposition material evaporating from each vapor deposition source, and further comprising a detection means disposed at a position close to each vapor deposition source. The vapor deposition apparatus of description.   The said control means controls the heating temperature of each said vapor deposition source in real time with the flow volume detected by the said detection means, The vapor deposition apparatus of Claim 3 characterized by the above-mentioned. The at least two deposition sources are disposed outside the chamber;
An ON / OFF valve for turning ON / OFF the flow of vapor of each vapor deposition material is provided in the middle of each pipe connecting each vapor deposition source and the chamber arranged outside the chamber. The vapor deposition apparatus according to claim 1, wherein the vapor deposition apparatus is characterized in that:   The said control means controls each said heater of each said vapor deposition source independently, and vaporizes each said vapor deposition material with a predetermined | prescribed evaporation rate, The vapor deposition apparatus of Claim 3 characterized by the above-mentioned. The moving means is
An LM guide provided in the chamber and parallel to the deposition surface of the substrate;
The vapor deposition apparatus according to claim 1, further comprising: a beam member fixed to the nozzle and reciprocally moved along the LM guide.   The said control means controls the said heater of each said flexible hose independently, and heats and keeps each said flexible hose to the temperature more than the continuous flight temperature of a vapor | steam over the longitudinal direction. Item 4. The vapor deposition apparatus according to Item 3.   The control means independently controls the heater of the nozzle to heat and keep the nozzle above the continuous flight temperature of the steam having the lowest continuous flight temperature among the mixed steam. The vapor deposition apparatus according to claim 3. The Bruno on the peripheral surface of the nozzle, the vapor deposition apparatus according to claim 1, characterized in that a plurality of said openings along the longitudinal direction. A joining pipe for conducting the combined steam obtained by joining the vapors of the first vapor deposition material and the second vapor deposition material is connected to one end surface of the nozzle,
The vapor deposition apparatus according to any one of claims 1 to 10, wherein a pipe for conducting the vapor of the third vapor deposition material is connected to the other end surface of the nozzle. At least two deposition sources for containing and evaporating the deposition material;
Which is connected to each of the deposition source, a pipe is the bent freely flexible hose for conducting the vapor of the evaporation material,
Be one of these pipes are connected with the mixing chamber capable of mixing the vapor of the each vapor deposition material, there the mixed vapor cylindrical member Ru comprises an opening for jetting to the substrate A nozzle ,
Moving means for reciprocating the nozzle along the substrate;
It is one that detects the flow rate of each vapor deposition material evaporated from the respective evaporation sources, have use a vapor deposition apparatus having a detection unit provided in a position closer to the each evaporation source,
From the first pipe connected to one end face of the nozzle and the second pipe connected to the other end face of the nozzle, the vapors of the respective vapor deposition materials of the same type or different types are fed into the mixing chamber. Let it flow in opposition,
When the vapors of the respective vapor deposition materials are mixed and sprayed onto the substrate in a mixing chamber and vapor deposited on the substrate as a mixed vapor deposition film, the vapors of the respective vapor deposition materials have a predetermined evaporation rate. Alternatively, control the heating so that it corresponds to the state,
The inner wall of each of the pipes and / or the nozzle is heated and controlled so as to be equal to or higher than the continuous flight temperature of each of the vapors and equal to or lower than the evaporation temperature of each of the vapor deposition materials,
Based on the flow rate of each vapor deposition material detected by the detection means, the heating temperature of each vapor deposition source is adjusted and controlled,
Vapor of each vapor deposition material is supplied into the mixing chamber, the vapors are uniformly stirred and mixed, and the mixed vapor is jetted from the openings as a parallel flow substantially free of diffusion to the substrate,
A mixed vapor deposition film is formed on the substrate.

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