JP5187714B2 - Semiconductor chip electrode connection structure - Google Patents

Description

  The present invention relates to an electrode formed on a semiconductor chip and a substrate, a semiconductor chip and a substrate provided with the electrode, an electrode connection structure of the semiconductor chip, a semiconductor module, and a manufacturing method thereof.

  Conventionally, as a connection structure between a semiconductor chip and a substrate, a structure in which a semiconductor chip is mounted face-down on a wiring substrate and both electrodes are connected via bump electrodes is known (Patent Document 1, Non-Patent Document 1). reference).

  In the structure described in each of Patent Document 1 and Non-Patent Document 1, the semiconductor chip and the electrode of the substrate are connected by one metal bump electrode provided therebetween.

  On the other hand, FIGS. 21A to 21C are diagrams for explaining another conventional connection structure. In this structure, bump electrodes are formed on the electrode pads 101 of the semiconductor chip 100 and the electrode pads 201 of the substrate 200. 102 and 202 are provided, and they are pressure bonded.

The bump electrode 102 and the bump electrode 202 are substantially the same width dimension as each other (see FIG. 21A), and are cylindrical or prismatic convex metal conductors having tip surfaces with substantially the same area. The widths a and b of the bump electrodes 102 and 202 are, for example, 10 μm or less.
Japanese Patent Laid-Open No. 2006-135771 N. Tanaka, Y. Yoshimura, T. Naito, C. Miyazaki, Y. Nemoto, M. Nakanishi and T, Akazawa, “Ultra-Thin 3D-Stacked SIP Formed UsingRoom-Temperature Bonding between Stacked Chips”, 2005 Electronic Components and TechnologyConference , pp.788-794.

  However, in the connection structure as illustrated in FIG. 21, due to the appearance of a minute bump electrode having a width of 10 μm or less accompanying the recent miniaturization of the bump electrodes 102 and 202, the position of the device is as shown in FIG. A deviation in the initial stage of bonding due to a limit of alignment accuracy (for example, ± 2 to 10 μm), that is, a positional deviation between the center M1 of the semiconductor chip 100 and the center M2 of the substrate 200 occurs.

  As shown in FIG. 21 (c), the deviation at the initial stage of joining leads to a lateral deviation due to the relief of the bump electrodes 102 and 202 during subsequent pressurization. Bonding in a state deviated from the center causes a significant decrease in bonding strength and bonding failure such as disconnection.

  The present invention has been made in view of the above circumstances, and an object of the present invention is to provide an electrode connection structure for an electrode and a semiconductor chip that can eliminate misalignment between electrodes during bonding.

  Another object of the present invention is to provide a semiconductor chip, a substrate, a semiconductor device, and a method for manufacturing the same, which have improved connection reliability by providing the electrode connection structure of the electrode and the semiconductor chip.

  In order to achieve the above object, the electrode of the present invention is first formed of a protruding metal conductor, and is inserted into an insertion opening provided in another electrode which is a connection partner. It is inserted while sliding in the direction toward the center of the other electrode along the opening edge or inner wall surface of the portion, and is connected to the other electrode.

  The first electrode has a cone shape in the second, a cone shape with a flattened tip, and a column shape in the fourth. Features.

  In addition, fifth, the metal bulk body has a metal layer different from the metal bulk body provided on the surface of the metal bulk body, and sixth, the metal layer has the metal bulk body. It is also characterized by being made of a metal having a melting point lower than that of the body.

  Furthermore, the electrode of the present invention seventhly includes an insertion opening for inserting another electrode as a connection partner, and the other electrode is provided along the opening edge or inner wall surface of the insertion opening. It is inserted while being slid in the direction toward the center, and is connected to another electrode.

  The seventh electrode is, in the eighth, a donut shape, in the ninth, the insertion opening is a cylindrical cavity, and in the tenth, the insertion opening is a mortar-shaped depression. Eleventh, the insertion opening is a cone-shaped depression, twelfth is formed in a convex shape, and thirteenth is formed in a concave shape. Its features.

  The fourteenth aspect includes a metal bulk body and a metal layer different from the metal bulk body provided on the surface of the metal bulk body. Fifteenth, the metal layer includes the metal bulk body. It is also characterized by being made of a metal having a melting point lower than that of the body.

  A semiconductor chip according to the present invention includes any one of the first to fifteenth electrodes.

  The substrate of the present invention is characterized by comprising any one of the first to fifteenth electrodes.

  In the electrode connection structure of a semiconductor chip according to the present invention, any one of the first to sixth electrodes provided on the semiconductor chip may be any one of the seventh to fifteenth provided on a substrate or another semiconductor chip. The electrodes are connected to each other by being inserted into an insertion opening of the electrodes.

  The electrode connection structure of a semiconductor chip according to the present invention is such that any one of the first to sixth electrodes provided on the substrate or the semiconductor chip is provided on any other semiconductor chip. The electrodes are connected to each other by being inserted into an insertion opening of the electrodes.

  The semiconductor device of the present invention is a semiconductor device in which electrodes of a substrate or a semiconductor chip and another semiconductor chip are connected to each other, and the electrode connection structure is provided between the electrodes of the substrate or the semiconductor chip and the other semiconductor chip. It is characterized by having.

  According to the method of manufacturing a semiconductor device of the present invention, any one of the first to sixth electrodes provided on a semiconductor chip is inserted into any one of the seventh to fifteenth electrodes provided on a substrate or another semiconductor chip. The semiconductor chip is mounted on the substrate or another semiconductor chip by inserting into the opening and bonding the electrodes together.

  According to another method of manufacturing a semiconductor device of the present invention, any one of the first to sixth electrodes provided on a substrate or a semiconductor chip is used, and any one of the seventh to fifteenth electrodes provided on another semiconductor chip. The other semiconductor chip is mounted on the substrate or another semiconductor chip by inserting the electrode into the insertion opening and bonding the electrodes together.

  ADVANTAGE OF THE INVENTION According to this invention, the electrode connection structure of the electrode and semiconductor chip which can eliminate the misalignment of electrodes at the time of joining is realizable. In addition, according to the present invention, it is possible to provide a semiconductor chip, a substrate, a semiconductor device, and a method for manufacturing the same with improved connection reliability by including the above-described electrode and electrode connection structure.

  Embodiments of the present invention will be described below with reference to the drawings.

(First embodiment)
1 to 3 are diagrams each showing an embodiment of the present invention.

  The semiconductor chip 1 in this embodiment has an electrode pad 10 formed at an appropriate position on a circuit formation surface, which is a first surface facing the substrate 2, and an electrode 11A formed in a protruding shape on the electrode pad 10. Yes.

  The substrate 2 on which the semiconductor chip 1 is mounted has an electrode pad 20 formed at an appropriate position on the first surface facing the semiconductor chip 1 side, and an electrode 21A formed so as to protrude thereon.

  As shown in FIG. 2A, the electrode 11A of the semiconductor chip 1 is a conical metal conductor whose width decreases in the height direction, that is, toward the substrate 2, and can also be called a bump electrode. The conical conductor has a symmetrical shape with respect to the center of the electrode, and its side surface 12 is a smooth surface. The electrode 11A is processed into a circular shape by, for example, etching using a resist.

  As shown in FIG. 2B, the electrode 21A of the substrate 2 has a thick donut shape having a cylindrical hollow insertion opening 22 having a uniform width (also referred to as a diameter) in the depth direction. It is a metal conductor (also called a cylindrical shape). The donut-shaped conductor has a symmetrical shape with respect to the center of the electrode. The processing of the electrode 21A into a donut shape and the formation of the insertion opening 22 are performed, for example, by etching using a resist pattern.

  Regarding the relationship between the electrode 11A and the electrode 21A, they are arranged at positions corresponding to each other, and the inner diameter b of the insertion opening 22 of the electrode 21A is smaller than the diameter a of the bottom surface of the electrode 11A (b <a). .

  In manufacturing a semiconductor device including the semiconductor chip 1 having the electrode 11A and the substrate 2 having the electrode 21A, the center positions of the electrodes 11A and the electrodes 21A arranged at positions corresponding to each other are aligned. However, by having the cone shape and the donut shape as described above, center alignment (position correction) is automatically realized.

  That is, as shown in FIG. 3, even if the center M1 of the semiconductor chip 1 is shifted from the center M2 of the substrate 2 before bonding, the tip of the electrode 11A first enters the insertion opening 22 of the electrode 21A, and then the electrode The entire surface of the electrode 11A slides in the direction toward the center of the electrode 21A while the side surface 12 of the 11A contacts the opening edge of the insertion opening 22 and slides down along the opening edge. As a result, when the tip of the electrode 11A reaches the bottom of the insertion opening 22, the center positions of the electrodes 11A and 21A are aligned. In the drawing, the vertical center lines slightly shifted in the lateral direction are aligned with each other after the electrode 11A in contact with the opening edge of the insertion opening 22 slides obliquely downward to the left toward the center of the electrode 21A. You can see that you are doing it.

  Then, pressure and heat treatment are performed as necessary to join the electrodes 11A and 21A. In FIG. 3, the distal end portion of the electrode 11 </ b> A after bonding is illustrated as being in a state of being crushed and expanded in the insertion opening 22 by pressurization and heating. Similar processing is performed in each embodiment described later.

  As described above, when the semiconductor chip 1 is mounted on the substrate 2, the electrodes 11 </ b> A and 21 </ b> A can be connected to each other while automatically correcting the center position shift between the semiconductor chip 1 and the substrate 2.

  According to the present embodiment, the semiconductor chip 1 and the substrate are provided by providing the protruding electrode 11A whose width decreases in the height direction on the semiconductor chip 1 side and the electrode 21A having the insertion opening 22 on the substrate 2 side. In the process of joining with No. 2, automatic alignment for eliminating the center deviation is performed only by inserting the electrode 11A into the insertion opening 22 of the electrode 21A. Therefore, the mounting accuracy of the semiconductor chip 1 on the substrate 2 can be improved, and an electrode connection structure and a semiconductor module with improved connection reliability can be realized.

  Note that the electrode 11A of the semiconductor chip 1 may be not only a conical shape but also a pyramid. Even the pyramidal electrode 11A is dropped into the insertion opening 22 while sliding in the direction toward the center of the electrode 21A in contact with the opening edge of the insertion opening 22 provided on the electrode 21A of the substrate 2. As a result, the center positions of the semiconductor chips 1 are aligned, and mounting, positioning, and electrode connection of the semiconductor chip 1 to the substrate 2 can be simultaneously realized with high accuracy.

  Moreover, in order to make the sliding of the electrode 11A with respect to the electrode 21A described above smooth and realize a more accurate alignment, it is desirable that both the electrodes 11A and 21A are rigid bodies that do not deform when contacted.

(Second Embodiment)
4-6 is a figure which shows another embodiment of this invention, respectively.

  In the present embodiment, the electrode 11B of the semiconductor chip 1 is a metal conductor having a trapezoidal cross section in which the tip of the cone is flattened. Other configurations are the same as those of the first embodiment. The processing of the cone shape having a flat tip is performed by etching using a resist, for example.

  Since the tip of the electrode 11B is slightly flat, it is easier to manufacture the electrode 11B, and there is an advantage that the height of each electrode 11B can be easily aligned with high accuracy.

  In this case, it is necessary that the inner diameter b of the insertion opening 22 of the electrode 21A is smaller than the diameter a of the bottom surface of the electrode 11B and larger than the tip width c (c <b <a).

  Even with such an electrode 11B and electrode 21A, as in the first embodiment, even if the center M1 of the semiconductor chip 1 is shifted from the center M2 of the substrate 2 before bonding, as shown in FIG. The flat tip of 11B enters the insertion opening 22 of the electrode 21A, and then the side surface 12 of the electrode 11B comes into contact with the opening edge of the insertion opening 22 and slides down along the opening edge. Slide in a direction toward the center of the electrode 21A. As a result, when the flat tip of the electrode 11B reaches the bottom of the insertion opening 22, the center positions of the electrodes 11B and 21A coincide.

  Therefore, it is possible to connect the electrodes 11B and 21A to each other while correcting the positional deviation between the semiconductor chip 1 and the substrate 2, and to simultaneously mount and align the semiconductor chip 1 and connect the electrodes with high accuracy. Can do.

(Third embodiment)
7-9 is a figure which shows 3rd Embodiment of this invention.
In this embodiment, the substrate 2 is an insertion opening that is a mortar-shaped (also called conical or semicircular) depression whose inner diameter (also called opening width) gradually decreases in the depth direction on the electrode pad 20. An electrode 21B having 22 is provided. Other configurations are the same as those of the second embodiment.

  The mortar-shaped insertion opening 22 is formed in the electrode 21 by, for example, etching using a resist pattern. The shape of the depression can be controlled by adjusting the etching conditions.

  The semiconductor chip 1 of this embodiment includes the conical electrode 11B having the same flattening tip as that of the second embodiment, but needless to say, the same conical electrode 11A as that of the first embodiment may be used. Yes. Of course, a pyramid shape can also be adopted.

  Even with such a structure including the electrode 21B and the electrode 11B (or the electrode 11A), as in the first and second embodiments, the center M1 of the semiconductor chip 1 is the substrate before bonding as shown in FIG. 2, the flat tip of the electrode 11 </ b> B first enters the insertion opening 22 of the electrode 21 </ b> A, and then the side surface 12 of the electrode 11 </ b> B or the periphery of the flat tip is the opening edge of the insertion opening 22. Or the entire electrode 11B slides in the direction toward the center of the electrode 21B while contacting the inner wall surface and sliding down along the insertion opening 22 as it is. As a result, when the flat tip of the electrode 11B reaches the bottom of the insertion opening 22, the center positions of the electrodes 11B and 21B coincide with each other.

  Therefore, it is possible to connect the electrodes 11B and 21B to each other while correcting the misalignment between the semiconductor chip 1 and the substrate 2, and to simultaneously mount and align the semiconductor chip 1 and connect the electrodes with high accuracy. Can do.

  According to the present embodiment, the inner wall surface of the mortar-shaped insertion opening 22 in the electrode 21B is a curved surface, and the tip of the electrode 11B is aligned along this curved surface. The improved bonding effect can be further improved.

  In the present embodiment, unlike the first and second embodiments, if the opening width d of the insertion opening 22 is larger than the tip width c (d> c), the opening width d of the insertion opening 22 will be described. Even if the relationship of d <a does not necessarily hold, the alignment is sufficiently possible. Therefore, the tolerance for the initial positional deviation between the semiconductor chip 1 and the substrate 2 is further increased, and metal bonding by more stable pressurization is possible.

(Fourth embodiment)
In the said 3rd Embodiment, although the shape of the insertion opening part 22 in the electrode 21B of the board | substrate 2 is a mortar shape, it can also be set as a pyramid-shaped hollow as shown, for example to Fig.10 (a). (Electrode 21C).

  Similarly in this case, as shown in FIG. 10B, the center position is automatically aligned when the semiconductor chip 2 is mounted, and stable electrode bonding can be realized.

(Fifth embodiment)
11-13 is a figure which shows 5th Embodiment of this invention.

  In the first to fourth embodiments described above, the electrode 21 (the electrode 21A and the like are collectively referred to as the electrode 21) is formed on the electrode pad 20 provided on the substrate 2 so as to protrude upward. ing.

  On the other hand, in this embodiment, a pyramid-shaped recess whose inner diameter gradually decreases in the depth direction in the electrode formation region of the substrate 2 and a thin-film metal conductor is formed so as to cover the recess. The metal conductor is an electrode 21D having a pyramidal insertion opening 22 along the shape of the recess.

  The formation of the recesses in the substrate 2 is performed by etching using, for example, a resist pattern. The shape of the recess can be controlled by adjusting the etching conditions.

  Even with such an electrode 21D, as shown in FIG. 13, even if the center M1 of the semiconductor chip 1 is deviated from the center M2 of the substrate 2 before bonding, the tip of the electrode 11B is first in the insertion opening 22 of the electrode 21D. Then, the side surface 12 of the electrode 11B or the peripheral edge of the flat tip contacts the inner wall surface of the insertion opening 22 and slides down along the insertion opening 22 as it is, so that the entire electrode 11B moves toward the center of the electrode 21. Slide in the direction. As a result, when the tip of the electrode 11B reaches the bottom of the insertion opening 22, the center positions of the electrodes 11B and 21D are aligned.

  As described above, the electrodes 11B and 21D can be connected to each other while correcting the positional deviation between the semiconductor chip 1 and the substrate 2, and the mounting, alignment, and electrode connection of the semiconductor chip 1 are simultaneously realized with high accuracy. be able to.

  According to the present embodiment, as in the third and fourth embodiments, it is possible to further improve the correction effect on displacement and the stable joining effect.

  In the present embodiment, unlike the first and second embodiments, if the opening width d of the insertion opening 22 is larger than the tip width c (b> c), the width d of the insertion opening 22 is not necessarily limited. Even if the relationship of d <a does not hold, alignment is sufficiently possible. Therefore, the tolerance for the initial positional deviation between the semiconductor chip 1 and the substrate 2 is further increased, and metal bonding by more stable pressurization is possible.

(Sixth embodiment)
In the fifth embodiment, the shape of the insertion opening 22 in the electrode 21D of the substrate 2 is a pyramid, but in addition to this, for example, an electrode 21E having a conical depression as shown in FIG. It can be employed, and similarly, electrode joining with corrected misalignment can be realized.

  Further, the semiconductor chip 1 may have a columnar electrode 11C as shown in FIG.

  For example, even when the electrode 11C and the electrode 21E are combined, as shown in FIG. 14C, electrode joining in which the center position deviation is automatically corrected can be realized in the same manner as in the other embodiments.

(Seventh embodiment)
15-17 is a figure which shows 7th Embodiment of this invention.

  In the present embodiment, the cylindrical electrode 11C in the semiconductor chip 1 and the projecting mortar-shaped electrode 21B in the substrate 2 are combined, and the mounting and alignment of the semiconductor chip 1 are performed in the same manner as in the other embodiments. And electrode connection can be realized simultaneously with high accuracy.

  Even with such an electrode 11C and electrode 21B, as shown in FIG. 17, even if the center M1 of the semiconductor chip 1 is shifted from the center M2 of the substrate 2 before bonding, the tip of the electrode 11C is first inserted into the electrode 21B. The entire periphery of the electrode 11 </ b> C is directed toward the center of the electrode 21 while entering the opening 22, and subsequently the tip periphery of the electrode 11 </ b> C contacts the inner wall surface of the insertion opening 22 and slides down along the insertion opening 22. Slide. As a result, when the tip of the electrode 11C reaches the bottom of the insertion opening 22, the center positions of the electrodes 11C and 21B are aligned.

  As described above, the electrodes 11C and 21B can be connected to each other while correcting the positional deviation between the semiconductor chip 1 and the substrate 2, and the mounting, alignment, and electrode connection of the semiconductor chip 1 are simultaneously realized with high accuracy. be able to.

  In the present embodiment, since there is no limitation on the shape of the convex electrode 11 (the electrode 11A and the like are collectively referred to as the electrode 11), the degree of freedom in design and process of forming the electrode 11 on the semiconductor chip 1 side is improved. Can be made.

  In addition, the electrode 11C of the semiconductor chip 1 may be a prismatic column other than the cylinder. Even in the case of the prismatic electrode 11C, the mounting, alignment and electrode connection of the semiconductor chip 1 to the substrate 2 can be simultaneously realized with high accuracy.

(Eighth embodiment)
As shown in FIGS. 18A, 18B, and 18C, the present embodiment is a combination of the cylindrical electrode 11C and the electrode 21C having the pyramidal insertion opening 22, and the other Similar to the embodiment, it is possible to easily realize good electrode joining with automatic position alignment by simply inserting the electrode 11C into the insertion opening 22 of the electrode 21C when the semiconductor chip 1 is mounted on the substrate 2.

(Ninth embodiment)
FIG. 19 is a cross-sectional view showing a ninth embodiment of the present invention.

  This embodiment is an example in which the concavo-convex structure of the electrodes 11 and 21 on the semiconductor chip 1 side and the substrate 2 side is reversed as compared with the first to eighth embodiments.

  The semiconductor chip 1 in the present embodiment includes an electrode pad 10 formed at an appropriate position on a circuit formation surface that is a first surface facing the substrate 2 side, and an electrode 11D formed so as to protrude thereon. .

  The substrate 2 on which the semiconductor chip 1 is mounted has an electrode pad 20 formed at an appropriate position on the first surface facing the semiconductor chip 1 side, and a protruding electrode 21F formed thereon.

  The electrode 11D of the semiconductor chip 1 is a thick donut-shaped (also called cylindrical) metal conductor having a cylindrical hollow insertion opening 13 having a uniform width (also called diameter) in the depth direction. It has become. The donut-shaped conductor has a symmetrical shape with respect to the center of the electrode. The processing of the electrode 11D into a donut shape and the formation of the insertion opening 13 are performed, for example, by etching using a resist pattern.

  The electrode 21F of the substrate 2 is a cone-shaped metal conductor whose width decreases in the direction of the height, that is, toward the semiconductor chip 1, and is a trapezoidal metal conductor with a flattened tip, and can also be called a bump electrode. . The conical conductor has a symmetrical shape with respect to the center of the electrode, and its side surface 12 is a smooth surface. The processing of the electrode 21F is performed by etching using a resist, for example.

  Regarding the relationship between the electrode 11D and the electrode 21F, they are arranged at positions corresponding to each other, and the inner diameter b of the insertion opening 13 of the electrode 11D is smaller than the diameter a of the bottom surface of the electrode 21F (b <a). .

  Even with such a structure, even if the center M1 of the semiconductor chip 1 is deviated from the center M2 of the substrate 2 before bonding, the electrode 11D becomes the electrode 21F as the electrode 121F is inserted into the insertion opening 13 of the electrode 11D. Slide toward the center of the. As a result, when the flat tip of the electrode 21F reaches the bottom of the insertion opening 13, the center positions of the electrodes 11D and 21F coincide with each other.

  Therefore, it is possible to stably bond the electrodes 11D and 21F to each other while correcting the positional deviation between the semiconductor chip 1 and the substrate 2, and simultaneously mounting, aligning and connecting the electrodes of the semiconductor chip 1 with high accuracy. Can be realized.

  Of course, since the electrodes 11 and 21 of the semiconductor chip 1 and the substrate 2 are merely reversed, not only the combination of the illustrated electrodes 11D (corresponding to the electrode 21B) and 21F (corresponding to the electrode 11B) but also other embodiments. Combinations in which all combinations of the electrodes 11 and 21 are reversed can also be employed.

(10th Embodiment)
By the way, as described in the first embodiment, the electrode 11 of the semiconductor chip 1 and the electrode 21 of the substrate 2 are rigid bodies that are not deformed at the time of contact in order to achieve smooth sliding of the electrode 11 with respect to the electrode 21. Desirable.

  However, in general, at the time of joining metals, it is also important to lower the hardness and soften at least the metal part that contributes to the joining so as to be easily deformed.

  Therefore, in the present invention, for example, as shown in FIGS. 20A and 20B, the electrode 11 and the electrode 21 are provided on the surfaces of the metal bulk bodies (also called base materials) 11a and 21a and the metal bulk bodies 11a and 21a. An embodiment having metal layers (also called different metal layers) 11b and 21b different from the metal bulk bodies 11a and 21a can also be adopted.

  The metal bulk bodies 11a and 21a are rigid bodies made of a moderately hard metal such as copper Cu, and the metal layers 11b and 21b are metals having a melting point lower than that of the metal bulk body, such as tin Sn or Sn-based alloys or A layered body made of a soft metal that easily deforms.

  According to this structure, during insertion, the electrodes 11 and 21 are aligned by smooth sliding without deformation, while the subsequent joining is performed through the metal layers 11b and 21b of the low melting point metal. As a result, reliable metal bonding or diffusion bonding between the upper and lower electrodes 11 and 21 at a low temperature is performed.

  In addition, the structure which consists of the metal bulk bodies 11a and 21a and the metal layers 11b and 21b may be either one of the upper and lower electrodes 11 and 21, or one of them. If at least one of them has this structure, the above effect can be realized.

  Further, the metal layers 11b and 21b may be provided on a part of the metal bulk bodies 11a and 21a that are in contact with the electrodes 11 and 21 to be joined, even if not all of the surfaces of the metal bulk bodies 11a and 21a.

  For example, FIGS. 20A (a) and 20 (b) show examples in which the metal layer 11b is provided in the entire surface area of the electrode 11A used in the embodiment of FIGS. An example is shown in which it is selectively formed only in the region covering up to.

  20A (c) and 20 (d) are examples in which the metal layer 11b is provided in the entire surface area of the electrode 11B used in the embodiment of FIGS. 4 to 13, and selectively formed only in the tip surface area. An example is shown.

  20A (e) (f) (g) shows an example in which the metal layer 11b is provided in the entire surface area of the electrode 11C used in the embodiment of FIGS. 14 to 18, from the tip surface to a part of the side surface. An example is shown in which it is selectively formed only in the covered region or the tip surface region.

  On the other hand, for example, FIGS. 20B (a), 20 (b), and 20 (c) each have the metal layer 21b over the entire surface area including the insertion opening 22 of the electrode 21A used in the embodiment of FIGS. The example which provided, the example selectively formed only in the area | region which covers an inner wall surface from the bottom face of the insertion opening part 22, or a bottom face area | region is shown.

  20B (d), (e), and (f) are examples in which the metal layer 21b is provided over the entire surface area including the insertion opening 22 of the electrode 21B used in the embodiment of FIGS. The example which selectively formed only in the inner surface whole area | region of the insertion opening part 22 or the bottom part area | region of the inner surface is shown.

  20B (g) (h) shows an example in which the metal layer 21b is provided in the entire surface area including the insertion opening 22 of the electrode 21D used in the embodiment of FIGS. An example of selective formation only in the entire inner surface area is shown.

  Of course, it is needless to say that the present invention can be applied to other electrodes 11 and 21 (not shown).

(Other embodiments)
The present invention is not limited to the description of the above embodiment.

  For example, the materials and manufacturing methods of the electrodes 11 and 21 are not limited, and various known materials and manufacturing methods can be employed.

  Further, regarding the combinations of the electrodes 11 and 21, not only the above-described embodiments, but also various combinations can be adopted as long as the same effect can be realized.

  In addition, although each said embodiment demonstrated the electrode 11 of the semiconductor chip 1 and the electrode 21 of the board | substrate 2 as embodiment at the time of mounting the semiconductor chip 1 in the board | substrate 2, the electrode at the time of lamination | stacking of the semiconductor chips 1 mutually is demonstrated. Needless to say, it can also be applied to connections. In this case, the electrode 11 may be used as the electrode of the upper semiconductor chip 1 and the electrode 21 may be used as the electrode of the lower semiconductor chip 1.

  In addition, various modifications can be made without departing from the scope of the present invention.

It is sectional drawing which shows 1st Embodiment of this invention. (A) and (b) are perspective views showing electrodes 11A and 21A in the first embodiment. It is a figure for demonstrating 1st Embodiment. It is sectional drawing which shows 2nd Embodiment of this invention. (A) and (b) are perspective views showing electrodes 11B and 21A in the second embodiment. It is a figure for demonstrating 2nd Embodiment. It is sectional drawing which shows 3rd Embodiment of this invention. (A) and (b) are perspective views showing electrodes 11B and 21B in the third embodiment. It is a figure for demonstrating 3rd Embodiment. (A) and (b) are sectional views showing a perspective view of an electrode 21C and a joined state of the electrodes 11B and 21C in the fourth embodiment of the present invention. It is sectional drawing which shows 5th Embodiment of this invention. (A) and (b) are perspective views showing electrodes 11B and 21D in the fifth embodiment. It is a figure for demonstrating 5th Embodiment. (A) (b) (c) is a perspective view showing an electrode 11C in a sixth embodiment of the present invention, showing an electrode 21E, and a cross-sectional view showing a joined state of the electrodes 11C and 21E. It is sectional drawing which shows 7th Embodiment of this invention. It is a perspective view which shows electrodes 11C and 21B in 7th Embodiment. It is a figure for demonstrating 7th Embodiment. (A), (b), and (c) are a perspective view of an electrode 11C, a perspective view of an electrode 21B, and a sectional view showing a joined state of the electrodes 11C and 21C in an eighth embodiment of the present invention. It is sectional drawing which shows 9th Embodiment of this invention. (A)-(g) is sectional drawing which shows the example of a variation of the electrode 11 in 10th Embodiment of this invention. (A)-(h) is sectional drawing which shows the example of a variation of the electrode 21 in 10th Embodiment of this invention. It is a figure for demonstrating the manufacturing method of the conventional semiconductor device.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor chip 10 Electrode pad 11,11A-11D Electrode 11a Metal bulk body 11b Metal layer 12 Side surface 13 Insertion opening part 2 Substrate 20 Electrode pad 21,21A-21F Electrode 21a Metal bulk body 21b Metal layer 22 Insertion opening part 100 Semiconductor chip 101 Electrode pad 102 Bump 200 Substrate 201 Electrode pad 202 Bump M1 Center of semiconductor chip M2 Center of substrate

Claims (5)

  Semiconductor chip electrode connection structure in which a first electrode provided on a semiconductor chip or substrate is inserted into an insertion opening of a second electrode provided on another semiconductor chip or substrate, and the electrodes are connected to each other Because
  The first electrode is
    It consists of a protruding metal conductor,
    Inserted while sliding in the direction toward the center of the second electrode along the opening edge or inner wall surface of the insertion opening when being inserted into the insertion opening of the second electrode as a connection partner Being an electrode connected to the second electrode in a state where the center positions of the two are aligned,
    A metal bulk body, and a metal layer provided on a surface of the metal bulk body,
    The metal bulk body is a rigid body that is inserted into the insertion opening of the second electrode and does not deform when contacting the opening edge or the inner wall surface,
    The metal layer is a layered body made of a metal having a melting point lower than that of the metal bulk body and deformed during metal bonding,
    The overall shape consisting of the metal bulk body and the metal layer is a cone shape with a flat tip,
  The second electrode is
    The first electrode is inserted while sliding in the direction toward the center of the insertion opening along the opening edge or inner wall surface of the insertion opening, and is connected to the first electrode,
    A metal bulk body, and a metal layer provided on a surface of the metal bulk body,
    The metal bulk body is a rigid body that does not deform when the first electrode is inserted into the insertion opening and contacts the opening edge or the inner wall surface,
    The metal layer is a layered body made of a metal having a melting point lower than that of the metal bulk body and deformed during metal bonding,
  The insertion opening is a pyramidal depression;
An electrode connection structure of a semiconductor chip. The second electrode is formed of a semiconductor chip or substrate convexly protruding upward, the electrode connection structure according to claim 1, wherein said insertion opening is formed, it thereto. It said second electrode, the electrode connection structure according to claim 1, which is formed in a concave shape on the semiconductor chip or substrate, it is characterized. Semiconductor chip, comprising the electrode connection structure according to any one of claims 1 to 3. A first electrode in any 請 Motomeko 1 to 3, is inserted into the insertion opening of the second electrode in any 請 Motomeko 1 to 3, by bonding the electrodes to each other, the semi-conductor the method of manufacturing a semiconductor device which is characterized in that mounted on a base plate and tip, or a semiconductor chip on another semiconductor chip.

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