JP5157357B2 - Aggregate structure of light emitting device package, manufacturing method thereof, and manufacturing method of light emitting device - Google Patents

Description

  The present invention relates to a collective structure of a package for a light emitting device, a method for manufacturing the same, and a method for manufacturing the light emitting device, and in particular, a lighting fixture, an on-vehicle headlight, an advertisement signboard illumination, a backlight illumination for a mobile phone, and the like. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device package assembly structure used in a light emitting device used for a light source or an indicator of various sensors such as a display capable of displaying data, a line sensor, etc. It is.

  Light emitting devices using light emitting elements such as light emitting diodes and semiconductor lasers are used as various light sources. In particular, light-emitting diodes capable of emitting ultra-bright light exceeding 1000 mcd have been developed, and are used for character display boards used indoors and outdoors such as lighting for liquid crystal backlights of mobile phones and full-color large-sized video devices. It's getting on. In order to display complex characters such as JIS Level 2 Kanji characters, a particularly high-definition display is required.

  The light emitting element generates heat during light emission. Therefore, if a light-emitting device equipped with light-emitting elements is simply mounted at a high density on a circuit board or the like in order to obtain a high-definition display, the characteristics of each member of the light-emitting device may deteriorate or fail due to heat generation of the light-emitting elements. There are things to do. Therefore, in order to dissipate the heat generated in the light emitting element, it is known to provide a heat dissipating member under the substrate on which the light emitting element is mounted (see Patent Document 1, etc.).

  In order to manufacture such a light-emitting device efficiently and at low cost, it is possible to manufacture a package, a component, and the like on which the light-emitting device or the light-emitting element is mounted as much as possible without generating unnecessary parts and with a small number of man-hours. desirable.

By the way, Patent Document 2 is not related to a light emitting device, but a semiconductor device in which a plurality of semiconductor elements are mounted is not affected by the number of semiconductor elements to be mounted and is manufactured on the same substrate in order to manufacture on the same manufacturing line. A plurality of element regions are provided through the separation part, and a structure in which a wiring part electrically connected to an electrode of a semiconductor element to be mounted is provided in each element region, and the required number of elements is provided in this element region. After mounting the above semiconductor element, it is described that an element region in which the semiconductor element is not mounted is cut and removed through an isolation portion as a surplus region.
JP 2006-54209 A (paragraphs 0064 to 0069, FIG. 5) JP 2000-183216 A

  However, conventionally, in the manufacture of light-emitting devices, individual parts, members, etc. are manufactured individually, and these parts, members, etc. are assembled for each light-emitting device and processed and processed individually in the subsequent processes. The For this reason, unnecessary parts are generated in manufacturing parts and members, and it is difficult to stably and efficiently produce a large number of light emitting devices.

  Accordingly, an object of the present invention is to reduce the number of unnecessary parts generated in the manufacturing process and to stably produce with a small number of man-hours. The object is to provide a method for manufacturing a light emitting device.

In order to solve the above-described problems, a light emitting device package assembly structure according to the present invention includes a package assembly in which a plurality of light emitting device packages are connected in series so as to share an insulating substrate and can be separated. A package for a light emitting device includes a first electrode portion disposed on an upper surface, an insulating substrate having a second electrode portion electrically connected to the first electrode portion, and a lower surface of the insulating substrate. A heat dissipation member and at least a pair of lead terminals connected to the second electrode portion, wherein the lead terminals of each light emitting device package constituting the package assembly are connected to the frame of the lead frame. The package assembly is an insulating substrate that is connected to both ends of the insulating substrate of the light emitting device package at both ends, does not have the first electrode portion, and is mounted with the heat dissipation member not discard Has a substrate, the discarded substrate is supported by connecting to the frame body of the lead frame by a lead discarded, the discarded lead, insulating substrate on which the heat radiating member and the light emitting device package and the discarded substrate share It is electrically connected through an internal conductive member, and is electrically connected through the lead terminal and the lead frame.

With the aggregate structure of light emitting device packages having such a configuration, a plurality of light emitting device packages can be processed and processed in a batch and efficiently manufactured.
In this light emitting device package assembly structure, the package assembly can efficiently manufacture a plurality of light emitting device packages by separating only the discarded substrates at both ends, and the generation of unnecessary parts is reduced. can do.
Further, by using a conductive member disposed inside the insulating substrate, all of the light emitting device packages constituting the package assembly can be collectively subjected to electrolytic plating.

  In the aggregate structure of the light emitting device package according to the present invention, in the light emitting device package, a bonding area between the heat dissipation member and the insulating substrate portion is smaller than an area of a lower surface of the insulating substrate portion. preferable.

  In the aggregate structure of the light emitting device package, in the light emitting device package, the bonding area between the heat dissipation member and the insulating substrate is smaller than the area of the lower surface of the insulating substrate, whereby the heat dissipation member is placed on the lower surface of the insulating substrate. Easy to install.

In the method for manufacturing an assembly structure for a light emitting device package according to the present invention, an insulating substrate is defined, a package region is formed so as to have a discarded substrate at both ends, and the first electrode portion is formed on the upper surface of each package region. Forming a substrate assembly by forming a second electrode portion electrically connected to the first electrode portion in each package region, and before, after or simultaneously with the first step. A second step of manufacturing a lead frame comprising a frame body, a plurality of pairs of lead terminals arranged to project inwardly from the frame body, and a discarded lead at both ends of the lead terminal array When manufacturing method wherein connecting the lead terminals of the lead frame to the second electrode of each package region constituting the substrate assembly, including a third step of mounting the heat radiating member and the the lower surface of each package region And manufacturing the assembly structure of the light emitting device package, and the lead terminals and the discard leads are electrically connected to the lead frame, and the discard leads are electrically connected to the heat dissipation member. A fourth step of performing electroplating using the lead frame as an electrode; and the lead terminal is electrically connected to the lead frame, and the discarded lead is not electrically connected to the heat radiating member. And a fifth step of performing electrolytic plating using the frame as an electrode .

In this manufacturing method, a plurality of light emitting device packages can be collectively processed and processed by the first step, the second step, the third step, the fourth step, and the fifth step . The aggregate structure can be obtained.

Further, the method for manufacturing a light emitting device of the present invention includes a step of manufacturing a light emitting device package aggregate structure by the method of manufacturing a light emitting device package aggregate structure, and a step above the first electrode portion in each package region. A step of placing a light emitting part including a light emitting element on the surface, electrically connecting the light emitting element and the first electrode part, a step of separating the lead terminal from a frame of the lead frame, and a package assembly. And a step of separating each light emitting device package.

  In this manufacturing method, a plurality of light emitting device packages can be efficiently manufactured following the manufacturing of the aggregate structure of the light emitting device packages.

  The aggregate structure of the light emitting device package of the present invention can efficiently produce the light emitting device package, and can achieve cost reduction by shortening the production time, stabilizing the production, and reducing the man-hour of the light emitting device package. it can.

  In addition, according to the manufacturing method of the present invention, generation of unnecessary members such as discarded substrates is reduced as much as possible, and a large number of light emitting device packages can be efficiently and efficiently reduced with a small number of man-hours. Can be manufactured in time.

  Further, according to the method for manufacturing a light emitting device of the present invention, a plurality of light emitting device packages can be efficiently manufactured following the manufacturing of the aggregate structure of the light emitting device packages.

  Hereinafter, a package for a light emitting device, a method for manufacturing the same, and a method for manufacturing a light emitting device according to the present invention will be described with reference to the drawings.

  FIG. 1 is a perspective view illustrating a configuration of an aggregate structure of a light emitting device package according to the present invention (hereinafter referred to as “aggregate structure”), and FIG. 2 is a plan view of the aggregate structure of the light emitting device package. FIG. 4 is a perspective view showing a light emitting device package, FIG. 4 is a perspective view showing a heat sink (heat radiating member), FIGS. 5A and 5B are diagrams for explaining a manufacturing process of a substrate assembly, and FIG. FIGS. 7A and 7B are diagrams illustrating a manufacturing process of a lead frame, FIG. 7 is a diagram illustrating a method for assembling an assembly structure of a package for a light emitting device, and FIG. 8 is a schematic diagram of a configuration of the light emitting device. It is a perspective view shown.

  The aggregate structure 200 shown in FIGS. 1 and 2 supports three rows of package aggregates 60A, 60B, and 60C in which five light emitting device packages 100 are connected, and the package aggregates 60A, 60B, and 60C. A lead frame 70.

  Each of the package assemblies 60 </ b> A, 60 </ b> B, and 60 </ b> C shares the insulating substrate 20, and the light emitting device packages 100 are connected in series so as to be detachable via the separation unit 61. Discarded substrates 62 a and 62 b are connected to both ends of the package assemblies 60 </ b> A, 60 </ b> B, and 60 </ b> C so as to be detachable via the separation unit 61. The discarded substrates 62a and 62b are connected to and supported by the lead frame 70 by discarded leads 63a and 63b. The insulating substrate 20 can be formed as an independent light emitting device package 100 by cutting the separating portion 61. After the separation, as shown in FIG. It becomes the insulating substrate 20a. Further, the separation part 61 can be formed by engraving a scribe line on the insulating substrate 20.

  As shown in FIG. 3, the light emitting device package 100 is mounted on the insulating substrate 20 a formed by separating the insulating substrate 20 shown in FIG. 1 through the separation portion 61 and the lower surface of the insulating substrate 20 a. A heat sink (heat radiating member) 30 and a pair of lead terminals 40a and 40b are provided. In the following description, the element mounting surface (upper surface) 21 side of the insulating substrate 20a is referred to as a main surface side, and the side on which the heat sink (heat radiating member) 30 is mounted is referred to as a back surface side.

The insulating substrate 20a has a substantially rectangular shape in plan view, and wiring patterns (not shown) are formed on the main surface side and the back surface side, respectively. As shown in FIG. 3, the insulating substrate 20 a includes an element mounting surface (upper surface) 21, terminal connection surfaces 22 a and 22 b, a partition wall 23, and a cavity 24 on the main surface side. The element mounting surface 21 is the uppermost surface of the insulating substrate 20a. The element mounting surface 21 is provided with a first electrode portion 25. The first electrode portion 25 is provided on the light emitting device package 100. An electrode electrically connected to a light emitting element (not shown) to be mounted is patterned. The terminal connection surfaces 22a and 22b are upper surfaces of step portions formed on one end side (left side in FIG. 3) of the insulating substrate 20a at a position lower than the element mounting surface 21, and the terminal connection surfaces 22a and 22b. Are formed with second electrode portions 26a and 26b electrically connected to the first electrode portion 25 by a conductive member (not shown) disposed inside the insulating substrate 20a. Joined terminal portions 41a and 41b of lead terminals 40a and 40b are connected to the second electrode portions 26a and 26b. The level difference between the terminal connection surfaces 22a and 22b and the element mounting surface 21 is such that the upper surfaces of the lead terminals 40a and 40b connected to the terminal connection surfaces 22a and 22b are lower than or comparable to the element mounting surface 21. It is formed as follows. The two terminal connection surfaces 22 a and 22 b are partitioned by a partition wall 23.

  The cavity 24 is formed in one end (right side in FIG. 3) of the element mounting surface 21 on the same side as the terminal connection surfaces 22a and 22b of the insulating substrate 20a. In addition, a conductive member that is electrically connected to the protection element 50 is patterned on the bottom surface of the cavity 24. The protection element 50 is composed of, for example, a Zener diode and an Au wire or an Al wire, and is connected to the light emitting element 11 via a wiring pattern. Further, the cavity 24 is filled with a mold resin that covers the protective element 50. The mold resin is made of, for example, a thermosetting resin.

The insulating substrate 20a is composed of, for example, a metal / ceramic composite wiring substrate having two or more layers such as LTCC (Low Temperature Cofired Ceramics). As a material of the insulating substrate 20a, a resin substrate, a hybrid substrate such as a glass epoxy substrate in which an inorganic substance is contained in an organic substance, an inorganic substrate such as a ceramic substrate, or the like can be used. In particular, when high heat resistance and high weather resistance are desired, it is preferable to use a hybrid substrate or an inorganic substrate. Further, when forming a light emitting device that requires high contrast, dark-colored insulation can be achieved by including Cr ₂ O ₃ , MnO ₂ , TiO ₂ , Fe ₂ O _3, etc. in the base material of the insulating substrate itself. It is preferable to use a conductive substrate.

  The main material of the ceramic substrate is preferably alumina, aluminum nitride, mullite, silicon carbide or the like. A ceramic substrate is obtained by adding a sintering aid or the like to these main materials and sintering. For example, 90 to 96% by weight of the raw material powder is alumina, and 4 to 10% by weight of clay, talc, magnesia, calcia, silica and the like are added as sintering aids, and sintered in a temperature range of 1500 to 1700 ° C. 40-60% by weight of the ceramics and raw material powder is alumina, and 60-40% by weight of borosilicate glass, cordierite, forsterite, mullite, etc. are added as sintering aids, and are baked in the temperature range of 800-1200 ° C. Examples include ceramics that have been bonded.

  Such a ceramic substrate can take various shapes at the green sheet stage before firing. First, the green sheet, which is a base material before firing, is processed so that a desired through hole is obtained, and in some cases, the green sheet is laminated in multiple layers. Next, a conductive material is patterned in a desired place by using a paste-like material in which a high melting point metal such as tungsten or molybdenum is contained in a desired place by a method such as screen printing. By sintering the base material processed in this manner, an insulating substrate 20a composed of a metal / ceramic composite wiring substrate in which a through hole and a conductive member are formed can be obtained.

  The conductive member is continuously formed from the upper surface to the lower surface of the insulating substrate. The wiring pattern of the conductive member can be appropriately changed depending on the number, type, size, and the like of the light emitting elements mounted on the light emitting device package 100. The material of the conductive member is not particularly limited as long as it has conductivity, and preferably has high thermal conductivity. Examples of such a material include tungsten, chromium, titanium, cobalt, molybdenum, and alloys thereof. Moreover, it is preferable that the outermost surface of the conductive member is covered with a member having a high reflectance with respect to light from the light emitting element to be mounted. Most of the conductive member formed on the upper surface of the insulating substrate 20a is preferably covered with a light-transmitting member, which can suppress deterioration of the light-emitting device. Moreover, it is preferable that the antioxidant film | membrane is formed in the electroconductive member exposed on the surface.

  When a ceramic substrate is used for the insulating substrate 20a, since the heat resistance is excellent, the insulating substrate 20a and the heat sink 30 can be fixed to each other by hard solder bonding or eutectic bonding capable of high strength bonding. For example, silver brazing mainly using an alloy of silver and copper, brass brazing whose main material is an alloy of copper and zinc, aluminum brazing whose main material is aluminum, nickel brazing, or the like can be used. Thereby, the residual stress due to the difference in thermal expansion coefficient between the heat sink 30 and the insulating substrate 20a can be relaxed.

  The insulating substrate 20a preferably has a metal film on the wiring pattern provided on the surface thereof, and the reliability can be further improved by providing the metal film. The metal film formed on the light emitting side preferably has at least the outermost surface made of a highly light-reflective metal such as chromium or silver. This can increase the light extraction efficiency of the light emitting element 11. The effect that can be produced. Further, the same effect can be obtained by finishing the surface of the metal film in a mirror surface state by surface treatment or the like of silver or white. Furthermore, it is preferable that at least the outermost surface of the metal film formed on the mounting side is made of an antioxidant metal such as gold or stainless steel.

  The heat sink (heat radiating member) 30 is not particularly limited as long as the material used is a metal material mainly composed of a metal having excellent thermal conductivity, and copper, aluminum, magnesium, or an alloy thereof is preferably used. Can do. For example, it is particularly preferable that oxygen-free copper or the like is used as a material. As shown in FIG. 4, the heat sink 30 is roughly formed of an upper block 30a having a size slightly narrower than the insulating substrate 20a and a lower block 30b wider than the insulating substrate 20a. The heat sink 30 includes a fixing portion 31 at a position separated from the insulating substrate 20a in the lower block 30b, and a substrate bonding surface 32 that is bonded to the insulating substrate 20a in the upper block 30a.

The fixing portion 31 has a structure for fixing to a plane such as a mounting substrate on which the light emitting device 300 is mounted, and is provided on one end side (right side in FIG. 3) of the heat sink 30. The fixing portion 31 shown in FIG. 3 has a U-shaped groove that can be screwed. A fixing screw is inserted into the U-shaped groove, and the light emitting device 300 can be slid along the groove to be placed at a predetermined location on the mounting substrate or the like, and can be screwed. There is an advantage that becomes better. Further, as shown in FIG. 5, the substrate bonding surface 32 on the upper surface of the heat sink 30 is formed such that the bonding area with the insulating substrate 20a is smaller than the area of the bottom surface of the insulating substrate 20a. Accordingly, there is an advantage that the heat sink 30 can be easily attached to the lower surface of the insulating substrate 20a. Further, when the light emitting device package is separated from the package assembly, the heat sink 30 can be cut without interference. Further, the stress due to the difference in thermal expansion coefficient between the insulating substrate and the heat sink 30 can be absorbed. The heat sink 30 is bonded to a wiring pattern provided on the bottom surface of the insulating substrate 20a through an adhesive member such as silver solder.

  The lead terminals 40a and 40b are disposed immediately above the upper block 30a of the heat sink (heat radiating member) 30, and are connected to joint terminal portions 41a and 41b joined to the conductive member and an external wiring circuit (not shown). Lead end portions 42a and 42b, and bent terminal portions 43a and 43b that bend and communicate between the connecting terminal portions 41a and 41b and the lead end portions 42a and 42b.

The lead terminals 40a and 40b are made of an alloy containing, for example, iron, nickel, cobalt or the like. As such an alloy, for example, Kovar or 42 alloy can be used. In particular, the lead terminals 40a and 40b preferably have a difference in coefficient of thermal expansion of 50% or less from the constituent material of the insulating substrate 20a. In order to make the thermal expansion coefficients coincide with each other, it is preferable that the bonding area between the bonding terminal portions 41a and 41b and the insulating substrate 20a is 10 mm ² or less. The lead terminal 40 is an electrode formed on the second electrode portions 26a and 26b provided on the two terminal connection surfaces 22 at the center on the other end side in the horizontal direction (left side in FIG. 3) of the insulating substrate 20a. For example, it is joined via an adhesive member such as silver solder.

The lead frame 70 includes a frame body 71 and three accommodation openings 72A, 72B, 72C provided in the frame body 71. The lead terminals 40a, 40b of the light emitting device packages 100 constituting the package assemblies 60A, 60B, 60C are formed on the side edges 73A, 73B, 73C of the housing openings 72A, 72B, 72C of the frame body 71 of the lead frame 70. Are connected in series. As a result, the package assemblies 60A, 60B, and 60C are supported by the lead frame 70. The package assemblies 60A, 60B, 60C and the respective light emitting device packages 100 can be separated from the lead frame 70 by separating the lead terminals 40a, 40b and the side edges 73A, 73B, 73C. Further, the discard substrates 62a and 62b provided at both ends of the package assemblies 60A, 60B, and 60C are connected to and supported by the lead frame 70 by the discard leads 63a and 63b. The discarded substrates 62a and 62b are supported by the lead frame 70 by the discarded leads 63a and 63b even after the package assemblies 60A, 60B, and 60C are separated from the lead frame 70.

  The collective structure 200 for a light emitting device package shown in FIG. 1 and FIG. 2 efficiently processes and processes a plurality of light emitting device packages 100 collectively while being supported by a lead frame 70. Therefore, productivity can be improved. For example, each of the package assemblies 60A, 60B, and 60C includes a single insulating substrate 20 as a common substrate, a plurality of light emitting device packages 100 formed therein, and a conductive member disposed inside the insulating substrate 20. , All of the light emitting device packages 100 constituting the package assemblies 60A, 60B, 60C can be collectively subjected to electrolytic plating. As a result, it is possible to achieve cost reduction by shortening production time and man-hours.

Specifically, the package assemblies 60A, 60B, and 60C have discard substrates 62a and 62b at both ends. The discard leads 63a and 63b provided on the discard substrates 62a and 62b are electrically connected to the heat sinks 30 provided on the light emitting device package via the conductive member in one insulating substrate. . The lead terminals 40a and 40b provided in the light emitting device package are electrically connected to the first electrode portion 25 (the portion to which the light emitting element is connected) on the upper surface of the insulating substrate. Further, the lead terminals 40a provided on the package emitting light device, 40b and discarded lead 63a, and 63 b, are electrically connected by the lead frame 70.

  In this electrolytic plating process, first, with the discarded leads 63a and 63b attached, electrolytic plating such as Ni plating is performed to cover the package assemblies 60A, 60B and 60C, the heat sink 30, and the lead frame 70 with Ni plating coatings. Can be made. That is, when the lead frame 70 is energized, the discarded leads 63a and 63b, the heat sink 30, the first electrode unit 25, and the lead terminals 40a and 40b that are electrically connected to the lead frame 70 can be covered. Next, by disposing the discarded leads 63a, 63b from the package assemblies 60A, 60B, 60C (particularly not electrically connected to the heat sink 30), for example, by performing electroplating such as Au plating Only the package aggregates 60A, 60B, 60C and the lead frame 70 (electrically conductive portions other than the heat sink 30) can be plated with Au.

  In addition, since the structure includes the discarded substrates 62a and 62b and the discarded leads 63a and 63b only at both ends of the package aggregates 60A, 60B, and 60C, the amount of useless portions (discarded substrates) can be reduced, thereby reducing the cost. It is valid. The discarded substrates 62a and 62b are supported on the lead frame 70 by the discarded leads 63a and 63b. Therefore, when the package assemblies 60A, 60B, and 60C are separated from the lead frame 70 and the light emitting device package 100 is made into an individual product, garbage other than the light emitting device package 100 that is the product (the discarded substrates 62a and 62b, the discarded leads). 63a, 63b) can be prevented from being mixed into the product. As a result, production stabilization and man-hour reduction can be achieved, and cost reduction can be achieved.

Furthermore, in this light emitting device package assembly structure 200, a plurality of light emitting device packages 100 are connected to one row of package assemblies 60A, 60B, 60C with the insulating substrate 20 in common. The upper surface (element mounting surface 21) of the insulating substrate 20a of each light emitting device package 100 is flush. Therefore, even if there are variations due to tolerances between the lead frames 40a, 40b and the lead frame and the ceramic joint, wire bonding, die bonding, resin molding, etc. on the top surface are facilitated, which is effective for production stabilization.

  This aggregate structure 200 is obtained by separating the light emitting device packages 100 of the package aggregates 60A, 60B, and 60C through the separating portion 61 and further separating the lead terminals 40a and 40b from the frame body 71 of the lead frame 70. Each light emitting device package 100 can be individualized. As a result, a large number of light emitting device packages 100 can be obtained. At this time, a plurality of package assemblies are manufactured, and these package assemblies are connected to a lead frame 70 having an accommodating opening according to the number of the package assemblies via lead terminals 40a and 40b. If the body is configured, it is possible to manufacture a plurality of rows of package assemblies and a large number of light emitting device packages 100. This enables mass production of the light emitting device package 100 and is effective in reducing costs.

Next, a method for manufacturing the aggregate structure 200 of the light emitting device package shown in FIG. 1 will be described.
In this manufacturing method, first, a first step of forming a substrate assembly having a configuration in which the insulating substrate 20a of the light emitting device package 100 is continuously provided and a second step of manufacturing the lead frame 70 are performed in parallel. Or sequentially. Also, a heat sink 30 is prepared.

  In the first step, first, as shown in FIG. 6A, the insulating substrate 20 in which five package regions 80 are continuously defined via the horizontal separation portion 61a and the vertical separation portion 61b. The original plate 20B is formed. In each package region 80 of the original plate 20B, an element placement surface (upper surface) 21, terminal connection surfaces 22a and 22b, a partition wall 23 partitioning the two terminal connection surfaces 22a and 22b, and a cavity 24 are formed. Discarded substrates 62a and 62b are formed at both ends along the direction of the horizontal separation portion 61a. A first electrode portion 25 is formed on the element mounting surface 21, and the first electrode portion 25 is electrically connected to a light emitting element (not shown) mounted on the light emitting device package 100. An electrode is formed. Further, the terminal connection surfaces 22a and 22b are formed as stepped portions on one end side (left side in FIG. 3) of the insulating substrate 20a at a position lower than the element mounting surface 21, and the terminal connection surfaces 22a and 22b Then, the second electrode portions 26a and 26b electrically connected to the first electrode portion 25 are formed by a conductive member (not shown) disposed inside the insulating substrate 20a.

  The base plate 20B of the insulating substrate 20 having the plurality of package regions 80 is first processed so that a desired through hole is obtained in a green sheet which is a base material before firing, and in some cases, laminated to multiple layers. . Next, a conductive material is patterned in a desired place by using a paste-like material in which a high melting point metal such as tungsten or molybdenum is contained in a desired place by a method such as screen printing. By sintering the base material processed in this way, it is possible to obtain an original plate 20B on which through holes and conductive members are formed.

  Next, the horizontal separation portion 61a is cut off, and as shown in FIG. 6B, substrate assemblies 90A, 90B, and 90C having a configuration in which the insulating substrate 20a of the light emitting device package 100 is connected are manufactured. . In the substrate aggregates 90A, 90B, 90C, five package regions 80 are connected to each other through a vertical separation portion 61b, and discarded substrates 62a, 62b are formed at both ends. The horizontal separation portion 61a can be cut off by a Thomson-type break or dicing.

  In the second step, first, as shown in FIG. 7A, three accommodation openings 72A, 72B, 72C are provided, and the side edges 73A, 73B, 72C of the accommodation openings 72A, 72B, 72C are provided. A lead frame 70 composed of a frame 71 to which lead terminals 40a and 40b are connected in series is punched and formed in 73C by pressing or the like. The lead terminals 40a and 40b are connected to the second electrode portions 26a and 26b provided on the terminal connection surfaces 22a and 22b of the package regions 80 of the substrate assemblies 90A, 90B, and 90C accommodated in the accommodation openings 72A, 72B, and 72C. Correspondingly formed. Further, at both ends of the row of the arranged lead terminals 40a and 40b, discard leads 63a and 63b connected to discard substrates 62a and 62b provided at both ends of the substrate assemblies 90A, 90B and 90C are formed. .

  Next, as shown in FIG. 7 (b), the arrayed lead terminals 40a and 40b and the discarded leads 63a and 63b are bent to accommodate the substrate assemblies 90A, which are accommodated in the accommodating openings 72A, 72B, 72C. It shape | molds so that it may connect with the 2nd electrode part 26a, 26b provided in the terminal connection surface 22a, 22b of each package area | region 80 of 90B, 90C. The lead terminals 40a and 40b and the discarded leads 63a and 63b can be bent by forming.

  In addition, independently of the first step and the second step, the heat sink 30 having the shape shown in FIG. 4 is manufactured using a desired mold in advance or in parallel with the first step and the second step.

  Next, in the third step, as shown in FIG. 8, using the substrate assemblies 90A, 90B, 90C manufactured in the first step, the lead frame 70 manufactured in the second step, and the heat sink 30, The aggregate structure 200 of the light emitting device package 100 shown in FIGS. 1 and 2 in which the package aggregates 60A, 60B, and 60C are connected and supported by the lead frame 70 is manufactured.

In the third step, the following steps (A) and (B) are performed. At this time, the order in which the step (A) and the step (B) are performed is not particularly limited, and may be performed in any order (can be performed simultaneously).
(A) The substrate assemblies 90A, 90B, and 90C are accommodated in the accommodating openings 72A, 72B, and 72C of the lead frame 70, and the second electrode portions 26a provided on the terminal connection surfaces 22a and 22b of the package regions 80 are accommodated. 26b, the joining terminal portions 41a and 41b of the lead frames 40a and 40b are joined via an adhesive member such as silver solder.
(B) The heat sink 30 is attached to the lower surface of each package region 80 of the substrate assemblies 90A, 90B, 90C.

  The aggregate structure 200 manufactured as described above can be efficiently processed and processed collectively in a state where the plurality of light emitting device packages 100 are supported by the lead frame 70. For example, all of the light emitting device packages 100 constituting the package assemblies 60A, 60B, and 60C are collectively subjected to electrolytic plating using a conductive member disposed inside the insulating substrate 20. it can.

In this electrolytic plating process, first, with the discarded leads 63a and 63b attached, first, electrolytic plating such as Ni plating is performed, and the package aggregates 60A, 60B and 60C, the heat sink 30, and the lead frame 70 are coated with Ni. Etc. are coated. Next, with the discarded leads 63a and 63b separated from the package assemblies 60A, 60B, and 60C, for example, by performing electrolytic plating such as Au plating, only the package assemblies 60A, 60B, and 60C and the lead frame 70 are performed. Can be plated with Au.

Finally, the light emitting device package 100 shown in FIG. 3 can be made into an individual product by the following steps (C) and (D). At this time, the order in which the step (C) and the step (D) are performed is not particularly limited, and may be performed in any order.
(C) The light emitting device packages 100 of the package assemblies 60 </ b> A, 60 </ b> B, and 60 </ b> C are separated through the separation unit 61.
(D) The lead terminals 40 a and 40 b are separated from the frame body 71 of the lead frame 70.

  Next, as shown in FIG. 9, the light emitting device 300 can be manufactured by mounting the light emitting unit 10 including the light emitting element 11 on the first electrode portion 25 of the obtained light emitting device package 100. In addition, in a state where the plurality of light emitting device packages 100 are supported by the lead frame 70, a light emitting unit including a light emitting element is disposed on the first electrode portion 25 of the element mounting surface 21 of each light emitting device package 100. Thus, the light emitting device 300 may be manufactured in a state in which a plurality of light emitting devices are continuously provided, and the light emitting device 300 may be made into an individual product through the steps (C) and (D).

In the light emitting device 300, the light emitting unit 10 includes a light emitting element 11 fixed by a die bonding member to a wiring pattern formed on the upper surface of the insulating substrate 20a, and a sealing member 12 covering the light emitting element 11. ing. The light emitting element 11 is composed of an LED made of a gallium nitride compound semiconductor, for example. The sealing member 12 is made of, for example, a thermosetting resin-based composite material containing a fluorescent material, and adjusts the color tone of the light emitting device 300 . In addition, the sealing member 12 protects the light emitting element 11 from external force, dust, moisture, and the like, and makes the light emitting element 11 have good heat resistance, weather resistance, and light resistance. Further, the sealing member 12 may contain an organic or inorganic coloring dye or coloring pigment for the purpose of cutting undesired wavelengths, or a diffusion material or filler for the purpose of controlling light distribution or color unevenness. can do.

  As the light emitting element 11, for example, a semiconductor in which a semiconductor such as GaAlN, ZnS, ZnSe, SiC, GaP, GaAlAs, AlN, InN, AlInGaP, InGaN, GaN, and AlInGaN is formed as a light emitting layer is used. Examples of the semiconductor structure include a homostructure having a MIS junction, a PIN junction, and a PN junction, a heterostructure, and a double heterostructure. Various emission wavelengths can be selected from ultraviolet light to infrared light depending on the material of the semiconductor layer and the degree of mixed crystal. The light emitting layer may have a single quantum well structure or a multiple quantum well structure which is a thin film in which a quantum effect is generated.

  In consideration of outdoor use, it is preferable to use a gallium nitride compound semiconductor as a semiconductor material capable of forming a high-luminance light-emitting element. In red, gallium / aluminum / arsenic semiconductors or aluminum / indium / gallium are used. -It is preferable to use a phosphorus-based semiconductor, but it can be used in various ways depending on the application.

  When a gallium nitride compound semiconductor is used, a material such as sapphire, spinel, SiC, Si, ZnO, or GaN single crystal is used for the semiconductor substrate. A sapphire substrate is preferably used to form gallium nitride with good crystallinity with high productivity. An example of the light-emitting element 11 using a nitride-based compound semiconductor is shown. A buffer layer such as GaN or AlN is formed on the sapphire substrate. A first contact layer made of N or P-type GaN, an active layer made of an InGaN thin film having a quantum effect, a clad layer made of P or N-type AlGaN, and a second contact made of P or N-type GaN. It can be set as the structure which formed the contact layer in order. Gallium nitride-based compound semiconductors exhibit N-type conductivity without being doped with impurities. When forming a desired N-type gallium nitride semiconductor such as improving luminous efficiency, Si, Ge, Se, Te, C, etc. are preferably introduced as appropriate as N-type dopants.

  On the other hand, when a P-type gallium nitride semiconductor is formed, a P-type dopant such as Zn, Mg, Be, Ca, Sr, or Ba is doped. Since a gallium nitride based semiconductor is difficult to be converted into a P-type simply by doping with a P-type dopant, it is necessary to make it P-type by annealing it by heating in a furnace, low electron beam irradiation, plasma irradiation or the like after introducing the P-type dopant. The semiconductor wafer thus formed is partially etched to form positive and negative electrodes. After that, the light emitting element can be formed by cutting the semiconductor wafer into a desired size.

A plurality of such light-emitting elements 11 can be used as appropriate, and various types of light-emitting devices can be formed depending on the combination and arrangement of colors. For example, various types such as a dot matrix and a linear shape can be selected, thereby obtaining a light emitting device having a very high mounting density and excellent heat dissipation. In order to be used as a full color light emitting device for a display device, a red light emitting element having an emission wavelength of 610 nm to 700 nm, a green light emitting element having an emission wavelength of 495 nm to 565 nm, and an emission wavelength of 430 nm to 490 nm. It is preferable to combine with a blue light emitting element. Further, in the light emitting device 300 of the present embodiment, when emitting a mixed color light such as a white color using a fluorescent material, the complementary color relationship with the emission wavelength from the fluorescent material, deterioration of the translucent resin, and the like are taken into consideration. The emission wavelength of the light emitting element 11 is preferably 400 nm or more and 530 nm or less, and more preferably 420 nm or more and 490 nm or less. In order to further improve the excitation and emission efficiency of the light emitting element and the fluorescent material, 450 nm or more and 475 nm or less are more preferable. Note that the light-emitting element 11 having a main emission wavelength in an ultraviolet region shorter than 400 nm or a short wavelength region of visible light can be used in combination with a member that is relatively difficult to be deteriorated by ultraviolet rays.

  The die bond member is a member for fixing the light emitting element 11 and the wiring pattern provided on the surface of the insulating substrate 20a, and is not particularly limited as long as these members can be bonded. In particular, considering heat sinking, it is preferable to use an Ag paste, a carbon paste, an ITO paste, a metal bump, or the like as the die bond member. In particular, in the case of a power-type light emitting device with a large calorific value, it is preferable to use an Au—Sn-based eutectic solder that has a high melting point so that the structural structure does not change at high temperatures and the deterioration of mechanical properties is small. .

  Specific materials constituting the translucent member used for the sealing member 12 include transparent resin and glass having excellent weather resistance such as epoxy resin, urea resin, silicone, modified epoxy resin, modified silicone resin, and polyamide. Preferably used. In the case where the light emitting elements 11 are arranged at a high density, it is more preferable to use an epoxy resin, a silicone resin, or a combination thereof in order to suppress joint breakage between members due to thermal shock. Further, a diffusing agent may be contained in the translucent member in order to further increase the viewing angle. As a specific diffusing agent, barium titanate, titanium oxide, aluminum oxide, silicon oxide or the like is preferably used. Furthermore, a fluorescent material that converts the wavelength of at least part of the light from the light emitting element 11 can also be included.

The sealing member 12 is preferably a silicone resin or a modified silicone resin that hardly undergoes color deterioration even when exposed to high-energy light having a short wavelength including ultraviolet rays, thereby suppressing the occurrence of color misregistration and color unevenness. The fluorescent material that can be used in this embodiment is one that converts light from the light emitting element 11, and one that converts light from the light emitting element 11 to a longer wavelength is more efficient. When the light from the light emitting element 11 is visible light having a short wavelength and high energy, a YAG: Ce phosphor or a Ca ₂ Si ₅ N ₈ phosphor, which is a kind of aluminum oxide phosphor, is preferably used. In particular, the YAG: Ce phosphor absorbs part of the blue light from the LED chip depending on its content and emits yellow light that is a complementary color. Can be formed relatively easily.

  The light emitting device package and the manufacturing method thereof according to the present invention are not limited to the above-described embodiment, and can include various configurations. For example, the number of lead terminals 40a and 40b, the terminal joint portions 41a and 41b of the lead terminals 40a and 40b, the lead tip portions 42a and 42b, the element mounting surface 21 of the insulating substrate 20a, the terminal connection surfaces 22a and 22b, The shape and arrangement location of the partition wall 23 and the cavity 24, the number of package assemblies, the number of openings of the lead frame 70, the number of light emitting device packages 100 arranged in one row of package assemblies, the heat sink ( The shape of the upper block and the lower block of the heat radiation member 30 can be variously modified.

It is a perspective view which shows an example of the aggregate structure of the package for light emitting devices of this invention. It is a top view which shows the assembly state of the aggregate structure of the package for light emitting devices. It is a perspective view which shows the package for light-emitting devices. It is a bottom view which shows the joining area of the board | substrate joint surface of the heat sink in the package for light-emitting devices, and an insulating board | substrate. It is a perspective view which shows a heat sink (heat radiating member). (A) And (b) is a figure explaining the manufacturing process of a board | substrate aggregate | assembly. (A) And (b) is a figure explaining the manufacturing process of a lead frame. It is a figure explaining the assembly method of the aggregate structure of the package for light emitting devices. It is a perspective view which shows the structure of a light-emitting device typically.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 Light emitting device package 200 Light emitting device package aggregate structure 300 Light emitting device 10 Light emitting portion 11 Light emitting element 12 Sealing member 20, 20a Insulating substrate 21 Element mounting surface (upper surface)
22a, 22b Terminal connection surface 23 Bulkhead 24 Cavity 25 First electrode part 26a, 26b Second electrode part 30 Heat sink (heat dissipation member)
30a Upper block 30b Lower block 31 Fixed portion 32 Board joint surface 40a, 40b Lead terminal 41a, 41b Join terminal portion 42a, 42b Lead tip portion 43a, 43b Bent portion 50 Protection element 60A, 60B, 60C Package assembly 61 Separation part 61a Horizontal separation part 61b Vertical separation part 62a, 62b Discard substrate 63a, 63b Discard lead 70 Lead frame 71 Frame body 72A, 72B, 72C Housing opening 73A, 73B, 73C Side 80 Package area 90A, 90B, 90C Substrate Aggregation

Claims (4)

A package assembly in which a plurality of light emitting device packages are connected in series so as to share an insulating substrate and can be separated;
The light emitting device package comprises:
A first electrode portion disposed on the upper surface, an insulating substrate provided with a second electrode portion electrically connected to the first electrode portion, a heat dissipation member mounted on the lower surface of the insulating substrate; And at least a pair of lead terminals connected to the second electrode part,
Lead terminals of each light emitting device package constituting the package assembly are connected to and supported by a frame of a lead frame,
The package assembly is an insulating substrate connected to an insulating substrate of the light emitting device package at both ends, and does not have the first electrode portion and has a discarded substrate to which the heat dissipation member is not attached. And
The discard substrate is supported by being connected to the frame of the lead frame by a discard lead,
The discard lead is electrically connected through a conductive member in an insulating substrate shared by the heat dissipation member, the light emitting device package, and the discard substrate, and also through the lead terminal and the lead frame. A collective structure of a package for a light-emitting device, which is electrically connected.   2. The aggregate structure of a light emitting device package according to claim 1, wherein a bonding area between the heat dissipation member and the insulating substrate is smaller than an area of a lower surface of the insulating substrate. . A package region is formed so as to define an insulating substrate and have a discarded substrate at both ends, and a first electrode portion is formed on an upper surface of each package region, and a first electrode portion electrically connected to the first electrode portion is formed. A first step of manufacturing a substrate assembly by forming two electrode portions in each package region;
A second step of manufacturing a lead frame comprising a frame, a plurality of pairs of lead terminals arranged to protrude inwardly to the frame, and a discarded lead at both ends of the lead terminal arrangement;
A third step of connecting a lead terminal of the lead frame to the second electrode portion of each package region constituting the substrate assembly, and mounting a heat radiating member on a lower surface of each package region;
A process for producing an assembly structure of the package for a light emitting device according to claim 1 or 2 by a production method comprising:
A fourth step of performing electrolytic plating using the lead frame as an electrode in a state where the lead terminal and the discard lead are electrically connected to the lead frame, and the discard lead is electrically connected to the heat radiating member;
A fifth step of performing electroplating using the lead frame as an electrode in a state where the lead terminal is electrically connected to the lead frame and the discarded lead is not electrically connected to the heat dissipation member;
A method for manufacturing a collective structure of a package for a light emitting device, comprising: A step of producing a light emitting device package aggregate structure by the method for producing a light emitting device package aggregate structure according to claim 3;
Placing a light emitting part including a light emitting element on the first electrode part of each package region, and electrically connecting the light emitting element and the first electrode part;
Separating the lead terminal from the frame of the lead frame;
Separating each light emitting device package from the package assembly;
A method for manufacturing a light-emitting device, comprising:

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