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JP5155638B2 - Light emitting device - Google Patents

Light emitting device Download PDF

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JP5155638B2
JP5155638B2 JP2007278168A JP2007278168A JP5155638B2 JP 5155638 B2 JP5155638 B2 JP 5155638B2 JP 2007278168 A JP2007278168 A JP 2007278168A JP 2007278168 A JP2007278168 A JP 2007278168A JP 5155638 B2 JP5155638 B2 JP 5155638B2
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led chip
metal plate
substrate
emitting device
insulating substrate
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JP2009105343A (en
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秀吉 木村
良二 横谷
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

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Description

本発明は、LEDチップ(発光ダイオードチップ)を利用した発光装置に関するものである。   The present invention relates to a light emitting device using an LED chip (light emitting diode chip).

従来から、青色光あるいは紫外光を放射するGaN系のLEDチップとLEDチップから放射された光によって励起されてLEDチップとは異なる発光色の光を放射する波長変換材料としての蛍光体や光吸収体とを組み合わせることにより、白色を含め、LEDチップの発光色とは異なる色合いの光を出す発光装置の研究開発が各所で行われ(例えば、特許文献1参照)、発光装置の光出力の増大に伴い照明用途への応用が進んでいる。   Conventionally, a GaN LED chip that emits blue light or ultraviolet light, and a phosphor or light absorption as a wavelength conversion material that emits light of an emission color different from that of the LED chip when excited by light emitted from the LED chip. Research and development of light emitting devices that emit light of a color different from the emission color of the LED chip, including white, by combining with the body is performed in various places (for example, see Patent Document 1), and the light output of the light emitting device is increased. Along with this, application to lighting applications is progressing.

ここにおいて、この種の発光装置を照明用途に用いる場合、LEDチップの温度上昇による発光効率の低下を抑制するために、LEDチップのジャンクション温度が最大ジャンクション温度を超えないように発光装置への投入電力を大きくして所望の光出力を得るようにしているのが一般的である。また、この種の発光装置を照明用途に用いる場合、長期間の動作寿命が必要なので、パッケージの材料として、耐久性の高い材料を用いることが要求されている。   Here, when this type of light emitting device is used for lighting applications, in order to suppress the decrease in light emission efficiency due to the temperature rise of the LED chip, the LED chip junction temperature should be put into the light emitting device so that it does not exceed the maximum junction temperature. Generally, the power is increased to obtain a desired light output. Further, when this type of light-emitting device is used for lighting, a long-term operation life is required, and therefore, it is required to use a highly durable material as a package material.

ところで、LEDチップ1からの放熱性を良くして発光効率を高めた発光装置としては、図8に示す構成のものが提案されている(公知文献にかかるものではない)。   By the way, as a light emitting device that improves the heat radiation efficiency by improving the heat dissipation from the LED chip 1, a light emitting device having the configuration shown in FIG. 8 has been proposed (not related to known literature).

図8に示した構成の発光装置は、LEDチップ1’と、LEDチップ1’が一表面側に実装された実装基板2’と、LEDチップ1’から放射される光によって励起されてLEDチップ1’の発光色とは異なる色の光を放射する蛍光体および透光性材料により形成され実装基板2’との間にLEDチップ1’を囲む形で配設されたドーム状の色変換部材4’とを備えている。なお、この発光装置では、LEDチップ1’としてGaN系の青色LEDチップを用い、色変換部材4’の蛍光体として黄色蛍光体を用いており、白色光を得ることができる。   The light emitting device having the configuration shown in FIG. 8 includes an LED chip 1 ′, a mounting substrate 2 ′ on which the LED chip 1 ′ is mounted on one surface side, and an LED chip that is excited by light emitted from the LED chip 1 ′. A dome-shaped color conversion member that is formed of a fluorescent material that emits light of a color different from the light emission color of 1 ′ and a light-transmitting material and that is disposed between the mounting substrate 2 ′ and the LED chip 1 ′. 4 '. In this light emitting device, a GaN blue LED chip is used as the LED chip 1 ′, and a yellow phosphor is used as the phosphor of the color conversion member 4 ′, so that white light can be obtained.

ここにおいて、実装基板2’は、薄板状のセラミック基板からなる絶縁性基板21’の一表面側に、LEDチップ1’の各電極それぞれとボンディングワイヤ14’,14’を介して電気的に接続される2つの配線パターン22’,22’が形成されている。ここで、各配線パターン22’,22’は、絶縁性基板21の側面と他表面(図8における下面)とに跨って形成されている外部接続用電極22b’,22b’まで延設され電気的に接続されている。   Here, the mounting substrate 2 ′ is electrically connected to one surface side of the insulating substrate 21 ′ made of a thin ceramic substrate and the respective electrodes of the LED chip 1 ′ via bonding wires 14 ′ and 14 ′. Two wiring patterns 22 'and 22' are formed. Here, the wiring patterns 22 ′ and 22 ′ extend to the external connection electrodes 22b ′ and 22b ′ formed across the side surface and the other surface (the lower surface in FIG. 8) of the insulating substrate 21. Connected.

また、上述の発光装置は、実装基板2’における絶縁性基板21’の上記他表面の中央部に、LEDチップ1’で発生した熱を放熱させるための放熱用導体部27’が形成されている。なお、放熱用導体部27’は、各配線パターン22’,22’と同じ材料により同じ厚さに形成され、LEDチップ1’よりも平面サイズを大きく設定してあり、投影領域内にLEDチップ1’が入るようにしてある。   Further, in the light emitting device described above, a heat radiating conductor portion 27 ′ for radiating heat generated in the LED chip 1 ′ is formed in the central portion of the other surface of the insulating substrate 21 ′ in the mounting substrate 2 ′. Yes. The heat radiating conductor portion 27 ′ is formed of the same material as the wiring patterns 22 ′ and 22 ′ with the same thickness, and has a larger planar size than the LED chip 1 ′. 1 'is entered.

上述の発光装置は、配線基板7’に実装する際に、外部接続用電極22b’,22b’を半田からなる接合部83’,83’を介して配線基板7’の導体パターン(ランド部)73’,73’と接合して電気的に接続するとともに、放熱用導体部27’を半田からなる接合部84’を介して配線基板7’の導体パターン(ランド部)74’と接合して熱結合させることにより、LEDチップ1’で発生した熱は薄板状の絶縁性基板21’の上記一表面から上記他表面側へと伝熱し、放熱用導体部27’と接合部84’とを通して配線基板7へ放熱されるので、LEDチップ1’の温度上昇を抑制することができる。ここにおいて、上述の発光装置では、放熱性を高めるために、絶縁性基板21’の厚み寸法を0.3mm程度に設定してある。また、配線基板7’は、放熱性を高めるために、Cu製の金属板71’上に絶縁層72’が形成され絶縁層72’上に導体パターンパターン73’,73’,74’が形成された金属ベース基板(金属ベースプリント配線板)により構成されている。
特開2007−250817号公報
When the light emitting device described above is mounted on the wiring board 7 ′, the external connection electrodes 22b ′ and 22b ′ are connected to the conductor pattern (land part) of the wiring board 7 ′ via the joints 83 ′ and 83 ′ made of solder. 73 ', 73' are joined and electrically connected, and the heat dissipating conductor portion 27 'is joined to the conductor pattern (land portion) 74' of the wiring board 7 'via the joint portion 84' made of solder. By heat coupling, the heat generated in the LED chip 1 ′ is transferred from the one surface of the thin insulating substrate 21 ′ to the other surface side, and passes through the heat radiating conductor portion 27 ′ and the joint portion 84 ′. Since heat is radiated to the wiring board 7, the temperature rise of the LED chip 1 ′ can be suppressed. Here, in the above-described light emitting device, the thickness dimension of the insulating substrate 21 ′ is set to about 0.3 mm in order to improve heat dissipation. Further, in order to improve heat dissipation, the wiring board 7 ′ has an insulating layer 72 ′ formed on the Cu metal plate 71 ′ and conductor pattern patterns 73 ′, 73 ′, 74 ′ formed on the insulating layer 72 ′. The metal base substrate (metal base printed wiring board) is used.
JP 2007-250817 A

ところで、図8に示した構成の発光装置では、実装基板2’における絶縁性基板21’がセラミックにより形成されているので、熱伝導性が良いとはいえず、LEDチップ1’で発生した熱が図9中に一点鎖線で示すように横方向にはあまり広がらずに放熱用導体部27’へ伝熱される。ここで、LEDチップ1’で発生した熱が絶縁性基板21’中を熱伝導する際の広がり角が45°であるとすれば、放熱用導体部27’におけるLEDチップ1’の投影領域から0.3mmだけ広がった領域にしか伝熱しないので、十分な放熱効果を得ることができず、発光効率の低下を防止するために、高出力化が難しかった。   Incidentally, in the light emitting device having the configuration shown in FIG. 8, since the insulating substrate 21 ′ in the mounting substrate 2 ′ is made of ceramic, it cannot be said that the thermal conductivity is good, and the heat generated in the LED chip 1 ′. However, as indicated by the alternate long and short dash line in FIG. 9, heat is transferred to the heat radiating conductor 27 ′ without spreading in the horizontal direction. Here, if the spread angle when the heat generated in the LED chip 1 ′ is conducted through the insulating substrate 21 ′ is 45 °, from the projection region of the LED chip 1 ′ in the heat radiating conductor portion 27 ′. Since heat is transferred only to a region spread by 0.3 mm, a sufficient heat dissipation effect cannot be obtained, and it has been difficult to increase the output in order to prevent a decrease in luminous efficiency.

また、上述の発光装置では、絶縁性基板21’のセラミックとしてアルミナが一般的に使用されているが、絶縁性基板21’の厚さを0.3mmに設定しても、熱抵抗が10℃/Wと大きく、放熱性を阻害する要因となっている。   In the above light emitting device, alumina is generally used as the ceramic of the insulating substrate 21 ′. However, even if the thickness of the insulating substrate 21 ′ is set to 0.3 mm, the thermal resistance is 10 ° C. / W, which is a factor that hinders heat dissipation.

また、上述の発光装置では、実装基板2’における外部接続用電極22b’,22b’が絶縁性基板21’の側面と上記他表面とに跨って形成されているので、外部接続用電極22b’,22b’と配線基板7’の導体パターン73’,73’との接合部83’,83’における半田フィレットを目視確認することで、外部接続用電極22b’,22b’と導体パターン73’,73’との電気的な接続状態を容易に確認することができるが、放熱用導体部27’と配線基板7’の導体パターン74’との接合部84’は実装基板2’の投影面内に位置するので、配線基板7’への実装後に接合部84’の接合状況を目視確認することができず、X線装置などの大掛かりな設備を利用しなければ、接合部84’の接合状況を確認することができないから、接合部84’の接合状況を容易に確認することができなかった。また、上述の発光装置では、放熱用導体部27’と配線基板7’の導体パターン74’との接合部84’に、当該接合部84’の基礎となる半田の溶融の過程で生じるフラックス分解成分などのガスがボイド90’となって接合部84’内に残留しやすく、ボイド90’が発生すると、熱伝導性が低下し、その上、通電のオンオフによる温度サイクルに起因して接合部84’に発生する応力によって、ボイド90’を基点としてクラックが発生しやすくなってしまう。   In the light emitting device described above, the external connection electrodes 22b ′ and 22b ′ on the mounting substrate 2 ′ are formed across the side surface of the insulating substrate 21 ′ and the other surface. , 22b ′ and the conductor fillets 73 ′, 73 ′ of the wiring board 7 ′ are visually checked for solder fillets at the joints 83 ′, 83 ′, so that the external connection electrodes 22b ′, 22b ′ and the conductor patterns 73 ′, It is possible to easily confirm the electrical connection state with 73 ′, but the joint 84 ′ between the heat radiating conductor 27 ′ and the conductor pattern 74 ′ of the wiring board 7 ′ is within the projection plane of the mounting board 2 ′. Therefore, it is impossible to visually check the bonding state of the bonding portion 84 ′ after mounting on the wiring board 7 ′, and the bonding state of the bonding portion 84 ′ is necessary unless a large-scale facility such as an X-ray apparatus is used. Can be confirmed No because, could not be easily confirm the bonding condition of the joint 84 '. Further, in the above-described light emitting device, flux decomposition that occurs in the melting process of the solder that forms the basis of the joint 84 ′ at the joint 84 ′ between the heat radiating conductor 27 ′ and the conductor pattern 74 ′ of the wiring board 7 ′. Gases such as components tend to remain as voids 90 ′ and remain in the joint 84 ′. When the voids 90 ′ are generated, the thermal conductivity is reduced, and furthermore, the joint is caused by a temperature cycle caused by turning on and off. Due to the stress generated at 84 ′, cracks are likely to occur with the void 90 ′ as a base point.

本発明は上記事由に鑑みて為されたものであり、その目的は、放熱性が高く、且つ、配線基板への実装後に配線基板との熱結合用の接合部の接合状況を容易に確認することが可能な発光装置を提供することにある。   The present invention has been made in view of the above-mentioned reasons, and the object thereof is high heat dissipation and easily confirms the joining state of the joint portion for thermal coupling with the wiring board after mounting on the wiring board. An object of the present invention is to provide a light emitting device capable of performing the above.

請求項1の発明は、LEDチップと、前記LEDチップが実装された実装基板とを備え、前記実装基板は、一表面側に前記LEDチップに電気的に接続される配線パターンが形成されるとともに他表面と側面とに跨って外部接続用電極が形成された絶縁性基板と、前記絶縁性基板の前記他表面側に埋設され投影視における外周線が前記LEDチップの外周線よりも外側に位置するメタルプレートとを有し、前記絶縁性基板の側面の一部に前記メタルプレートの側面を露出させる切欠部が設けられてなり、前記LEDチップと前記メタルプレートとの間には、前記絶縁性基板の薄肉部があることを特徴とする。 The invention of claim 1 is provided with LED chips, and the L ED mounting substrate chip is mounted, the implementation substrate, the L ED chip electrically connected to the wiring pattern is formed on one surface side other surface and an insulating substrate where the external connection electrodes are formed across the side surface, the outer peripheral line of the embedded in the other surface side peripheral line in the projection view of the insulation substrate is the L ED chip together are and a metal plate positioned on the outer side than the result provided notch exposing a side surface of the main barrel plate portion of the side surface of the insulation substrate is said LED chip and said metal plate There is a thin portion of the insulating substrate between them.

この発明によれば、一表面側にLEDチップに電気的に接続される配線パターンが形成されるとともに他表面と側面とに跨って外部接続用電極が形成された絶縁性基板の前記他表面側に埋設され投影視における外周線が前記LEDチップの外周線よりも外側に位置するメタルプレートを有するので、放熱性を高めることができ、しかも、実装基板における前記絶縁性基板の側面の一部に前記メタルプレートの側面を露出させる切欠部が設けられていることにより、配線基板に実装して用いる場合に、前記配線基板への実装後に前記メタルプレートと前記配線基板との熱結合用の接合部の接合状況を目視で容易に確認することが可能となる。また、この発明によれば、前記LEDチップと前記メタルプレートとの間には、前記絶縁性基板の薄肉部があるので、前記LEDチップで発生した熱が前記絶縁性基板の薄肉部を通して前記LEDチップよりも広い前記メタルプレートへ伝熱されて放熱される。 According to the present invention, the other surface side of the insulating substrate in which the wiring pattern electrically connected to the LED chip is formed on one surface side and the external connection electrode is formed across the other surface and the side surface. since peripheral line of buried projected view to have a metal plate positioned outside the peripheral line of the L ED chip, it is possible to enhance the heat radiation, moreover, the side surface of the insulation substrate that put on a mounting board by notch exposing a side surface of the main barrel plate in a part of the is provided, in the case of using and mounted on the wiring board, the wiring and the main barrel plate after mounting to the wiring substrate It becomes possible to easily confirm visually the joining state of the joint for thermal coupling with the substrate . According to the present invention, since there is a thin portion of the insulating substrate between the LED chip and the metal plate, heat generated in the LED chip passes through the thin portion of the insulating substrate. Heat is transferred to the metal plate wider than the chip and dissipated.

本願の別の発明は、LEDチップと、前記LEDチップが実装された実装基板とを備え、前記実装基板は、一表面側に前記LEDチップに電気的に接続される配線パターンが形成されるとともに他表面と側面とに跨って外部接続用電極が形成された絶縁性基板と、前記絶縁性基板の前記他表面側に埋設され投影視における外周線が前記LEDチップの外周線よりも外側に位置するメタルプレートとを有し、前記絶縁性基板の側面の一部に前記メタルプレートの側面を露出させる切欠部が設けられてなり、前記メタルプレートは、前記絶縁性基板の前記一表面側に露出するマウント部が突設されてなり、前記LEDチップは、マウント部に搭載されてなることを特徴とする。 Another invention of the present application includes an LED chip and a mounting substrate on which the LED chip is mounted, and the mounting substrate has a wiring pattern electrically connected to the LED chip on one surface side. An insulating substrate on which external connection electrodes are formed across the other surface and the side surface, and an outer peripheral line embedded in the other surface side of the insulating substrate and positioned outside the outer peripheral line of the LED chip. to and a metal plate, wherein it said cutouts exposing a side surface of the metal plate is provided in a part of the side surface of the insulating substrate, prior Symbol metal plate, on the one surface of the insulating substrate An exposed mount portion is protruded, and the LED chip is mounted on the mount portion.

上記別の発明によれば、一表面側にLEDチップに電気的に接続される配線パターンが形成されるとともに他表面と側面とに跨って外部接続用電極が形成された絶縁性基板の前記他表面側に埋設され投影視における外周線が前記LEDチップの外周線よりも外側に位置するメタルプレートを有するので、放熱性を高めることができ、しかも、実装基板における前記絶縁性基板の側面の一部に前記メタルプレートの側面を露出させる切欠部が設けられていることにより、配線基板に実装して用いる場合に、配線基板への実装後に前記メタルプレートと前記配線基板との熱結合用の接合部の接合状況を目視で容易に確認することが可能となる。また、上記別の発明によれば、前記LEDチップで発生した熱が前記絶縁性基板を介さずに前記メタルプレートへ直接伝熱されるので、放熱性が向上し、光出力の向上を図れるとともに、寿命および信頼性の向上を図れる。 According to the another invention described above, the other of the insulating substrate in which the wiring pattern electrically connected to the LED chip is formed on one surface side and the external connection electrode is formed across the other surface and the side surface. Since the outer peripheral line in the projection view has a metal plate that is located outside the outer peripheral line of the LED chip, the heat dissipation can be enhanced, and the side surface of the insulating substrate in the mounting substrate can be improved. In the case where the metal plate and the wiring board are mounted on the wiring board, the metal plate and the wiring board are joined for thermal coupling after being mounted on the wiring board. It becomes possible to easily confirm the joining state of the parts visually. Furthermore, according to the further inventions, the so LED chips heat generated in is directly heat transfer to the metal plate without going through the insulation substrate, improved heat dissipation, thereby improving the light output At the same time, the life and reliability can be improved.

本願の他の発明は、上記別の発明において、前記マウント部は、前記絶縁性基板の前記一表面を含む平面から突出していることを特徴とする。 Another invention of the present application is characterized in that , in the above-mentioned another invention, the mount portion protrudes from a plane including the one surface of the insulating substrate.

上記他の発明によれば、前記LEDチップから放射される光のうち前記絶縁性基板の前記一表面へ入射して吸収される成分を低減できて、発光装置全体としての外部への光取り出し効率を向上できる。 According to the other invention, the light emitted from the LED chip can be reduced in components incident on and absorbed by the one surface of the insulating substrate, and the light extraction efficiency as a whole of the light emitting device can be reduced. Can be improved.

本願の更に他の発明は、上記別の発明または上記他の発明において、前記マウント部は、前記LEDチップの搭載領域の周囲に接合材料溜め用溝が形成されてなることを特徴とする。 Still another invention of the present application is characterized in that , in the above-mentioned another invention or the above-mentioned other invention, the mounting portion is formed with a bonding material reservoir groove around the LED chip mounting region.

上記更に他の発明によれば、前記LEDチップを前記マウント部の搭載領域に半田(金−錫合金などによるロウ付けを含む)により接合する際に前記LEDチップ直下から溢れ出た余分な半田が接合材料溜め用溝に溜まるので、余分な半田が前記絶縁性基板の前記一表面側の前記配線パターン上まで流れ出ることによる短絡やワイヤボンディング不良などを防止することができる。 According to still another aspect of the invention, when the LED chip is joined to the mounting area of the mount portion by solder (including brazing using a gold-tin alloy or the like), excess solder overflowing from immediately below the LED chip is present. Since it accumulates in the bonding material reservoir groove, it is possible to prevent a short circuit or wire bonding failure caused by excess solder flowing out onto the wiring pattern on the one surface side of the insulating substrate.

請求項2の発明は、請求項1の発明において、前記実装基板は、前記絶縁性基板の前記他表面側において前記メタルプレートが前記外部接続用電極の表面を含む平面よりも突出していることを特徴とする。 According to a second aspect of the present invention, in the first aspect of the invention, the mounting substrate is such that the metal plate protrudes from a plane including the surface of the external connection electrode on the other surface side of the insulating substrate. Features.

この発明によれば、前記外部接続用電極と前記配線基板の導体パターンとの間の接合部の厚みを厚くすることができ、通電のオンオフによる温度サイクルがかかったときに前記絶縁性基板と前記配線基板と線膨張率差に起因して前記外部接続用電極と前記配線基板の前記導体パターンとの前記接合部に生じる応力が緩和され、当該接合部にクラックが発生するのを抑制することができる。 According to the present invention, the can to increase the thickness of the joint portion between the external connection electrode and the conductive pattern of the wiring substrate, and the insulating substrate when the applied temperature cycle according to OFF of energization the stress caused by the wiring substrate and the linear expansion coefficient difference to the junction between the conductive material pattern of the wiring substrate and the external connection electrodes is reduced, occurrence of cracks in the joint Can be suppressed.

請求項3の発明は、請求項1または請求項2の発明において、前記メタルプレートは、前記絶縁性基板の前記他表面側と同じ面側に、中央から外側に向かって幅の広くなる溝が形成されてなることを特徴とする。 According to a third aspect of the present invention, in the first or second aspect of the present invention, the metal plate has a groove that becomes wider from the center toward the outer side on the same surface side as the other surface side of the insulating substrate. It is formed.

この発明によれば、前記配線基板に実装して用いるにあたって、前記メタルプレートを前記配線基板に半田により接合する際に、半田の溶融から硬化の過程で生じるフラックスなどのガスおよび気泡が溝に沿って外部に抜けやすくなり、硬化後の半田からなる接合部の内部にボイドが生じるのを抑制することができ、結果的に、前記LEDチップと前記配線基板との間の熱抵抗のばらつきを小さくすることができるとともに、温度サイクルがかかった時に前記絶縁性基板と前記配線基板との線膨張率差によって生じる応力変化に対する熱結合用の前記接合部の耐性が高くなって信頼性が向上する。 According to the present invention, when used and mounted on the wiring substrate, when bonding by solder said main barrel plate on the wiring substrate, the gas and air bubbles, such as flux caused in the process of curing the solder melting easily escape to the outside along the grooves, the inside of the joining portion made of solder after curing can be suppressed from voids occur, consequently, the thermal resistance between the wiring substrate and the LED chip it is possible to reduce variations in, is the high resistance of the junction of the heat coupling to stress changes caused by difference in linear expansion coefficient between the insulating substrate and the wiring substrate when the temperature cycle is applied Reliability is improved.

請求項1の発明では、放熱性が高く、且つ、配線基板への実装後に配線基板との熱結合用の接合部の接合状況を容易に確認することが可能になるという効果がある。   According to the first aspect of the present invention, there is an effect that the heat dissipation is high and it is possible to easily confirm the bonding state of the bonding portion for thermal coupling with the wiring board after mounting on the wiring board.

(実施形態1)
本実施形態の発光装置は、図1に示すように、LEDチップ1と、LEDチップ1が一表面側に実装された実装基板2と、LEDチップ1から放射された光によって励起されてLEDチップ1の発光色とは異なる色の光を放射する蛍光体を含有した透光性材料により形成されLEDチップ1を実装基板2との間に囲む形で実装基板2の上記一表面側に配設されたドーム状の色変換部材4と、色変換部材4と実装基板2とで囲まれた空間に充実されLEDチップ1および金細線からなるボンディングワイヤ14,14を封止した透光性の封止材(例えば、シリコーン樹脂、ガラスなど)からなる封止部(図示せず)とを備えている。なお、本実施形態では、実装基板2と色変換部材4とで囲まれた空間がLEDチップ1を封止した封止部により充実されているが、上記空間を空気雰囲気や不活性ガス雰囲気や真空雰囲気としてもよい。
(Embodiment 1)
As shown in FIG. 1, the light emitting device of the present embodiment is an LED chip 1 that is excited by light emitted from the LED chip 1, a mounting substrate 2 on which the LED chip 1 is mounted on one surface side, and the LED chip 1. The LED chip 1 is formed on the one surface side of the mounting substrate 2 so as to surround the LED chip 1 between the mounting substrate 2 and formed of a translucent material containing a phosphor that emits light of a color different from the emission color of 1. The dome-shaped color conversion member 4 and the translucent seal in which the bonding wires 14 and 14 made of the LED chip 1 and the fine gold wires are sealed in a space surrounded by the color conversion member 4 and the mounting substrate 2. And a sealing portion (not shown) made of a stopper (eg, silicone resin, glass, etc.). In the present embodiment, the space surrounded by the mounting substrate 2 and the color conversion member 4 is enriched by the sealing portion that seals the LED chip 1. However, the space is filled with an air atmosphere, an inert gas atmosphere, A vacuum atmosphere may be used.

なお、本実施形態の発光装置では、LEDチップ1として、青色光を放射するGaN系青色LEDチップを用い、色変換部材4の蛍光体として、LEDチップ1から放射された青色光によって励起されてブロードな黄色系の光を放射する粒子状の黄色蛍光体を用いており、LEDチップ1から放射され色変換部材4を透過した青色光と、色変換部材4の黄色蛍光体から放射された黄色光とが色変換部材4の光出射面から拡散した配光となって出射されることとなり、白色光を得ることができる。   In the light emitting device of the present embodiment, a GaN blue LED chip that emits blue light is used as the LED chip 1, and the phosphor of the color conversion member 4 is excited by the blue light emitted from the LED chip 1. A particulate yellow phosphor that emits broad yellow light is used, blue light emitted from the LED chip 1 and transmitted through the color conversion member 4, and yellow emitted from the yellow phosphor of the color conversion member 4. The light is emitted as a light distribution diffused from the light exit surface of the color conversion member 4, and white light can be obtained.

上述のLEDチップ1は、一表面側(図1(b)おける上面側)に各電極(図示せず)が形成されており、実装基板2は、薄板状のセラミック基板(例えば、アルミナ基板など)からなる絶縁性基板21の一表面側に、LEDチップ1の各電極それぞれとボンディングワイヤ14,14を介して電気的に接続される2つの配線パターン22,22およびLEDチップ1が半田(例えば、AuSn半田など)などにより接合されるダイボンディング部30が形成されている。ここで、各配線パターン22,22は、絶縁性基板21の側面と他表面(図1(b)における下面)とに跨って形成されている外部接続用電極22b,22bまで延設され電気的に接続されている。なお、絶縁性基板21の材料はアルミナなどのセラミックに限らず、絶縁性の高いガラスエポキシ樹脂や液晶ポリマーなどの耐熱性樹脂でもよい。また、本実施形態では、LEDチップ1のチップサイズを0.3mm□、絶縁性基板21の厚みを0.3mmに設定してあるが、これらの値は特に限定するものではない。   Each LED (not shown) is formed on one surface side (the upper surface side in FIG. 1B) of the LED chip 1 described above, and the mounting substrate 2 is a thin ceramic substrate (for example, an alumina substrate or the like). The two wiring patterns 22 and 22 and the LED chip 1 that are electrically connected to the respective electrodes of the LED chip 1 via the bonding wires 14 and 14 are soldered to one surface side of the insulating substrate 21 made of , AuSn solder, etc.) are formed. Here, each of the wiring patterns 22 and 22 extends to the external connection electrodes 22b and 22b formed across the side surface of the insulating substrate 21 and the other surface (the lower surface in FIG. 1B). It is connected to the. The material of the insulating substrate 21 is not limited to ceramics such as alumina, but may be a heat-resistant resin such as a highly insulating glass epoxy resin or liquid crystal polymer. In this embodiment, the chip size of the LED chip 1 is set to 0.3 mm □, and the thickness of the insulating substrate 21 is set to 0.3 mm. However, these values are not particularly limited.

また、実装基板2は、絶縁性基板21の上記他表面側に、LEDチップ1で発生した熱が伝熱されるCu製のメタルプレート25が埋設されており、投影視におけるメタルプレート25の外周線がLEDチップ1の外周線の外側に位置している。要するに、メタルプレート25の投影領域内にLEDチップ1が配置されている。したがって、LEDチップ1で発生した熱が絶縁性基板21の薄肉部を通してLEDチップ1よりも広いメタルプレート25へ伝熱されて放熱されるので、LEDチップ1の温度上昇が抑制され、光出力の向上を図れるとともに、寿命および信頼性の向上を図れる。ここにおいて、実装基板2は、絶縁性基板21の上記他表面の中央部にメタルプレート25が埋設される埋込穴24aが設けられ、埋込穴24aの内底面(メタルプレート25との接合部位)にメッキが施されており、メタルプレート25がロウ付けなどで接合されている。ここで、本実施形態では、絶縁性基板21の上記他表面と、メタルプレート25における絶縁性基板21の上記他表面側の表面とが略面一となっている。なお、メタルプレート25の材料は、Cuに限らず、例えば、CuWなどでもよい。   Further, the mounting substrate 2 has a Cu metal plate 25 to which heat generated by the LED chip 1 is transferred on the other surface side of the insulating substrate 21, and the outer peripheral line of the metal plate 25 in a projected view. Is located outside the outer peripheral line of the LED chip 1. In short, the LED chip 1 is arranged in the projection area of the metal plate 25. Therefore, since the heat generated in the LED chip 1 is transferred to the metal plate 25 wider than the LED chip 1 through the thin portion of the insulating substrate 21 and radiated, the temperature rise of the LED chip 1 is suppressed and the light output is reduced. It is possible to improve the service life and reliability. Here, the mounting substrate 2 is provided with an embedding hole 24a in which the metal plate 25 is embedded in the central portion of the other surface of the insulating substrate 21, and the inner bottom surface of the embedding hole 24a (joined portion with the metal plate 25). ) Is plated, and the metal plate 25 is joined by brazing or the like. Here, in the present embodiment, the other surface of the insulating substrate 21 and the surface on the other surface side of the insulating substrate 21 in the metal plate 25 are substantially flush. The material of the metal plate 25 is not limited to Cu, and may be CuW, for example.

また、実装基板2は、絶縁性基板21の側面の一部にメタルプレート25の側面を露出させる切欠部21aが設けられている。   In addition, the mounting substrate 2 is provided with a notch 21 a that exposes the side surface of the metal plate 25 at a part of the side surface of the insulating substrate 21.

実装基板2は、上述のように、絶縁性基板21の側面と上記他表面とに跨って外部接続用電極22b,22bが形成されるとともに絶縁性基板21の上記他表面側にメタルプレート25が埋設されているので、外部接続用電極22b,22bに対応する導体パターン73,73およびメタルプレート25に対応する導体パターン74が形成された配線基板7に実装する際に、外部接続用電極22b,22bを半田からなる接合部83,83を介して配線基板7の導体パターン73,73と接合して電気的に接続するとともに、メタルプレート25を半田からなる接合部84を介して配線基板7の導体パターン75と接合して熱結合させることにより、LEDチップ1で発生した熱は絶縁性基板2の上記一表面と埋込穴24aの内底面との間の薄肉部を通してメタルプレート25へ伝熱されメタルプレート25で拡散しつつ配線基板7へ伝熱されて外部へ放熱される。ここにおいて、配線基板7は、Cu製の金属板71上に絶縁層72が形成され、絶縁層72上に配線パターン73,75が形成された金属ベース基板(金属ベースプリント配線板)により構成されている。なお、金属板71の材料は、Cuに限らず、例えば、Alでもよい。また、本実施形態の発光装置では、LEDチップ1で発生した熱が実装基板2の上記一表面と埋込穴24aの内底面との間の薄肉部を通してメタルプレート25へ伝熱されるので、熱抵抗を小さくする観点から上記薄肉部の厚みは薄い方が望ましい。   As described above, the mounting substrate 2 has the external connection electrodes 22b and 22b formed across the side surface of the insulating substrate 21 and the other surface, and the metal plate 25 on the other surface side of the insulating substrate 21. Since the conductor patterns 73 and 73 corresponding to the external connection electrodes 22b and 22b and the conductor pattern 74 corresponding to the metal plate 25 are mounted on the wiring board 7, the external connection electrodes 22b and 22b are embedded. 22b is joined to and electrically connected to the conductor patterns 73 and 73 of the wiring board 7 through the joints 83 and 83 made of solder, and the metal plate 25 is connected to the conductor pattern 73 and 73 of the wiring board 7 through the joints 84 made of solder. By joining and thermally coupling to the conductor pattern 75, the heat generated in the LED chip 1 is between the one surface of the insulating substrate 2 and the inner bottom surface of the embedded hole 24a. Heat is transferred to the metal plate 25 through the wall portion is heat transfer to the circuit board 7 with diffuse a metal plate 25 is radiated to the outside. Here, the wiring board 7 is constituted by a metal base board (metal base printed wiring board) in which an insulating layer 72 is formed on a Cu metal plate 71 and wiring patterns 73 and 75 are formed on the insulating layer 72. ing. The material of the metal plate 71 is not limited to Cu, but may be Al, for example. Further, in the light emitting device of this embodiment, heat generated in the LED chip 1 is transferred to the metal plate 25 through the thin portion between the one surface of the mounting substrate 2 and the inner bottom surface of the embedded hole 24a. From the viewpoint of reducing the resistance, it is desirable that the thickness of the thin portion is thin.

色変換部材4は、シリコーン樹脂からなる透光性材料にLEDチップ1から放射された青色光によって励起されて黄色光を放射する粒子状の黄色蛍光体を分散させた混合材料を用いてドーム状に形成されている。なお、色変換部材4の材料として用いる透光性材料は、シリコーン樹脂に限らず、例えば、アクリル樹脂、ガラス、有機成分と無機成分とがnmレベルもしくは分子レベルで混合、結合した有機・無機ハイブリッド材料などを採用してもよい。また、色変換部材4の材料として用いる透光性材料に含有させる蛍光体も黄色蛍光体に限らず、色調整や演色性を高めるなどの目的で複数種類の蛍光体を用いてもよく、例えば、赤色蛍光体と緑色蛍光体とを用いることで演色性の高い白色光を得ることができる。ここで、複数種類の蛍光体を用いる場合には必ずしも発光色の異なる蛍光体の組み合わせに限らず、例えば、発光色はいずれも黄色で発光スペクトルの異なる複数種類の蛍光体を組み合わせてもよい。   The color conversion member 4 is formed in a dome shape using a mixed material in which a particulate yellow phosphor that is excited by blue light emitted from the LED chip 1 and emits yellow light is dispersed in a translucent material made of silicone resin. Is formed. The translucent material used as the material of the color conversion member 4 is not limited to a silicone resin. For example, an organic / inorganic hybrid in which an acrylic resin, glass, an organic component and an inorganic component are mixed and combined at the nm level or the molecular level. Materials etc. may be adopted. Further, the phosphor to be contained in the translucent material used as the material of the color conversion member 4 is not limited to the yellow phosphor, and a plurality of types of phosphors may be used for the purpose of improving color adjustment and color rendering. White light with high color rendering properties can be obtained by using a red phosphor and a green phosphor. Here, when a plurality of types of phosphors are used, the phosphor is not necessarily a combination of phosphors having different emission colors, and for example, a plurality of types of phosphors having an emission color of yellow and different emission spectra may be combined.

ところで、色変換部材4は、実装基板2の上記一表面側が開口され光入射面および光出射面それぞれが球面の一部からなるドーム状に形成されており、実装基板2の上記一表面側にシリコーン樹脂などの接着剤により接合されている。なお、本実施形態では、実装基板2の外周形状が矩形状となっているが、矩形状に限らず、円形状や多角形状でもよい。   By the way, the color conversion member 4 is formed in a dome shape in which the one surface side of the mounting substrate 2 is opened and each of the light incident surface and the light emitting surface is a part of a spherical surface, and is formed on the one surface side of the mounting substrate 2. Bonded by an adhesive such as silicone resin. In the present embodiment, the outer peripheral shape of the mounting substrate 2 is a rectangular shape, but is not limited to a rectangular shape, and may be a circular shape or a polygonal shape.

以上説明した本実施形態の発光装置では、実装基板2における絶縁性基板21の上記他表面側に埋設され投影視における外周線がLEDチップ1の外周線よりも外側に位置するメタルプレート25を有し、メタルプレート25は絶縁性基板21に比べて熱伝導性が高いので、メタルプレート25へ伝熱された熱は横方向へも速やかに広がってメタルプレート25全体が略同じ温度となるので、放熱性を高めることができ、しかも、絶縁性基板21の側面の一部にメタルプレート25の側面を露出させる切欠部21aが設けられていることにより、配線基板7に実装して用いる場合に、配線基板7への実装後にメタルプレート25と配線基板7の導体パターン74との熱結合用の接合部84の接合状況を目視で容易に確認することが可能となる。ここで、本実施形態の発光装置では、メタルプレート25における導体パターン74に対向する表面と側面における露出表面とが接合部84を介して導体パターン74に接合されるから、配線基板7に実装した状態において、側方から切欠部21aを通して、接合部84にフィレットが形成されているか否かを目視で確認することにより接合状況を確認することができる。また、実装基板2の各外部接続用電極22b,22bについても、側方から、接合部83,83にフィレットが形成されているか否かを目視で確認することにより接合状況を確認することができる。   The light emitting device of the present embodiment described above includes the metal plate 25 that is embedded on the other surface side of the insulating substrate 21 in the mounting substrate 2 and whose outer peripheral line in projection view is located outside the outer peripheral line of the LED chip 1. Since the metal plate 25 has higher thermal conductivity than the insulating substrate 21, the heat transferred to the metal plate 25 spreads quickly in the lateral direction, and the entire metal plate 25 reaches substantially the same temperature. When the heat dissipation can be improved and the cutout portion 21a that exposes the side surface of the metal plate 25 is provided on a part of the side surface of the insulating substrate 21, it is used when mounted on the wiring substrate 7. After mounting on the wiring board 7, it is possible to easily visually confirm the joining state of the joint portion 84 for thermal coupling between the metal plate 25 and the conductor pattern 74 of the wiring board 7.Here, in the light emitting device of the present embodiment, the surface facing the conductor pattern 74 and the exposed surface on the side surface of the metal plate 25 are bonded to the conductor pattern 74 via the bonding portion 84, and thus mounted on the wiring board 7. In the state, the joining state can be confirmed by visually confirming whether or not a fillet is formed in the joining portion 84 from the side through the notch portion 21a. Moreover, also about each external connection electrode 22b, 22b of the mounting board | substrate 2, a joining condition can be confirmed by confirming whether the fillet is formed in the junction part 83, 83 from the side. .

(実施形態2)
本実施形態の発光装置の基本構成は実施形態1と略同じであって、LEDチップ1として厚み方向の両面に電極が設けられたGaN系の青色LEDチップを用いており、図2に示すように、2つの配線パターン22,22のうちの一方がLEDチップ1を搭載するダイボンディング部を兼ねており、LEDチップ1の裏面側の電極(カソード電極)が当該ダイボンディング部を兼ねる上記一方の配線パターン22に半田(例えば、AuSn半田など)により接合され、LEDチップ1の表面側の電極(アノード電極)がボンディングワイヤ14を介して他方の配線パターン22と電気的に接続されている点などが相違する。なお、実施形態1と同様の構成要素には同一の符号を付して説明を省略する。
(Embodiment 2)
The basic configuration of the light emitting device of the present embodiment is substantially the same as that of the first embodiment, and a GaN-based blue LED chip having electrodes provided on both sides in the thickness direction is used as the LED chip 1, as shown in FIG. In addition, one of the two wiring patterns 22, 22 also serves as a die bonding part on which the LED chip 1 is mounted, and an electrode (cathode electrode) on the back side of the LED chip 1 serves as the die bonding part. The wiring pattern 22 is bonded to the wiring pattern 22 by solder (for example, AuSn solder), and the electrode (anode electrode) on the surface side of the LED chip 1 is electrically connected to the other wiring pattern 22 through the bonding wire 14. Is different. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 1, and description is abbreviate | omitted.

また、本実施形態の発光装置では、実装基板2における絶縁性基板21の上記薄肉部に、上記ダイボンディング部を兼ねる配線パターン22とメタルプレート25とを電気的に接続するスルーホール配線26が形成されており、メタルプレート25が一方の外部接続用電極を兼ねている。   Further, in the light emitting device of the present embodiment, the through hole wiring 26 that electrically connects the wiring pattern 22 also serving as the die bonding portion and the metal plate 25 is formed in the thin portion of the insulating substrate 21 in the mounting substrate 2. The metal plate 25 also serves as one external connection electrode.

本実施形態の発光装置においても、実施形態1と同様、配線基板7に実装した状態において、側方から切欠部21aを通して、接合部84にフィレットが形成されているか否かを目視で確認することにより接合状況を確認することができる。   Also in the light emitting device of the present embodiment, as in the first embodiment, it is visually confirmed whether or not a fillet is formed at the joint portion 84 from the side through the cutout portion 21a when mounted on the wiring board 7. Thus, the joining state can be confirmed.

(実施形態3)
本実施形態の発光装置の基本構成は実施形態2と略同じであって、図3に示すように、メタルプレート25の一表面の中央部から絶縁性基板21の上記一表面側に露出するマウント部25bが連続一体に突設されており、LEDチップ1が、マウント部25bに搭載されている点などが相違する。なお、実施形態2と同様の構成要素には同一の符号を付して説明を省略する。
(Embodiment 3)
The basic configuration of the light emitting device of the present embodiment is substantially the same as that of the second embodiment, and as shown in FIG. 3, the mount exposed from the center of one surface of the metal plate 25 to the one surface side of the insulating substrate 21. The part 25b is protruded continuously and integrally, and the LED chip 1 is different in that it is mounted on the mount part 25b. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 2, and description is abbreviate | omitted.

本実施形態における実装基板2は、絶縁性基板21の上記一表面と埋込穴24aの内底面との間の部位にマウント部25bが挿入される貫通孔24bが設けられており、マウント部25の表面と絶縁性基板21の上記一表面とが略面一となっている。   The mounting substrate 2 in the present embodiment is provided with a through hole 24b into which the mount portion 25b is inserted between the one surface of the insulating substrate 21 and the inner bottom surface of the embedded hole 24a. The surface of the insulating substrate 21 and the surface of the insulating substrate 21 are substantially flush with each other.

本実施形態におけるLEDチップ1は、実施形態2と同様に厚み方向の両面に電極(図示せず)が形成されており、実装基板2側の電極が半田を介してマウント部25に接合され、実装基板2側とは反対側の電極が金細線からなるボンディングワイヤ14を介して配線パターン22と電気的に接続されている。   The LED chip 1 in the present embodiment has electrodes (not shown) formed on both surfaces in the thickness direction as in the second embodiment, and the electrode on the mounting substrate 2 side is joined to the mount portion 25 via solder, The electrode on the side opposite to the mounting substrate 2 side is electrically connected to the wiring pattern 22 via the bonding wire 14 made of a fine gold wire.

しかして、本実施形態の発光装置では、メタルプレート25に上述のマウント部25bが突設され、LEDチップ1がマウント部25bに搭載されているので、LEDチップ1で発生した熱が実施形態1,2のように絶縁性基板21の上記薄肉部を通すことなくメタルプレート25へ直接伝熱されるので、放熱性が向上し、光出力の向上を図れるとともに、寿命および信頼性の向上を図れる。   Thus, in the light emitting device of the present embodiment, the mounting portion 25b is protruded from the metal plate 25, and the LED chip 1 is mounted on the mounting portion 25b. Therefore, the heat generated in the LED chip 1 is Embodiment 1. , 2, heat is directly transferred to the metal plate 25 without passing through the thin portion of the insulating substrate 21, so that heat dissipation is improved, light output can be improved, and life and reliability can be improved.

なお、LEDチップ1は、当該LEDチップ1とメタルプレート25との線膨張率差に起因してLEDチップ1に働く応力を緩和するサブマウント部材を介してマウント部25bに搭載するようにしてもよい。この場合のサブマウント部材は、上記応力を緩和する機能だけでなく、LEDチップ1で発生した熱をメタルプレート25のマウント部25bにおいてLEDチップ1のチップサイズよりも広い範囲に伝熱させる熱伝導機能を有するようにLEDチップ1よりも平面サイズの大きなものを用い、また、熱伝導性の高い材料を用いることが好ましい。   The LED chip 1 may be mounted on the mount portion 25b via a submount member that relieves stress acting on the LED chip 1 due to a difference in linear expansion coefficient between the LED chip 1 and the metal plate 25. Good. The submount member in this case has not only the function of relieving the stress, but also heat conduction that transfers heat generated in the LED chip 1 to a wider range than the chip size of the LED chip 1 in the mount portion 25b of the metal plate 25. It is preferable to use a material having a larger planar size than the LED chip 1 so as to have a function, and to use a material having high thermal conductivity.

(実施形態4)
本実施形態の発光装置の基本構成は実施形態3と略同じであって、図4に示すように、マウント部25bが絶縁性基板21の上記一表面を含む平面から突出している点、絶縁性基板21の上記一表面側に、色変換部材4を位置決めする円環状の位置決め用枠28が設けられている点が相違するだけである(図4中の一点鎖線の矢印はLEDチップ1から放射された光の進行方向を模式的に示している)。ここにおいて、マウント部25の上記平面からの突出寸法は、配線パターン21の厚さと位置決め用枠28の厚さとの合計厚さよりも大きく設定してある。なお、実施形態3と同様の構成要素には同一の符号を付して説明を省略する。
(Embodiment 4)
The basic configuration of the light emitting device of the present embodiment is substantially the same as that of the third embodiment. As shown in FIG. 4, the mount 25 b protrudes from the plane including the one surface of the insulating substrate 21. The only difference is that an annular positioning frame 28 for positioning the color conversion member 4 is provided on the one surface side of the substrate 21 (the dashed line arrow in FIG. The direction of travel of the emitted light is schematically shown). Here, the projecting dimension of the mount portion 25 from the plane is set to be larger than the total thickness of the wiring pattern 21 and the positioning frame 28. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 3, and description is abbreviate | omitted.

しかして、本実施形態の発光装置では、マウント部25bが絶縁性基板21の上記一表面を含む平面から突出しているので、LEDチップ1から放射される光のうち絶縁性基板21の上記一表面へ入射して吸収される成分を低減できて、また、マウント部25の上記平面からの突出寸法が、配線パターン21の厚さと位置決め用枠28の厚さとの合計厚さよりも大きく設定してあるので、LEDチップ1から水平方向に放射された光が位置決め用枠28に遮られることなく外部へ出射されるから、発光装置全体としての外部への光取り出し効率を向上できる。また、本実施形態の発光装置では、マウント部25が上記平面から突出しているので、位置決め用枠28を用いない場合に、色変換部材4と実装基板2との接着部に隙間があってもLEDチップ1からの青色の光が漏れるのを抑制することができる。   Therefore, in the light emitting device of the present embodiment, the mount portion 25b protrudes from a plane including the one surface of the insulating substrate 21, so that the one surface of the insulating substrate 21 out of the light emitted from the LED chip 1 is used. The component that is incident on and absorbed can be reduced, and the protruding dimension of the mount portion 25 from the plane is set to be larger than the total thickness of the wiring pattern 21 and the positioning frame 28. Therefore, since the light emitted from the LED chip 1 in the horizontal direction is emitted to the outside without being blocked by the positioning frame 28, the light extraction efficiency to the outside as the entire light emitting device can be improved. Further, in the light emitting device of the present embodiment, since the mount portion 25 protrudes from the plane, even if there is a gap in the adhesion portion between the color conversion member 4 and the mounting substrate 2 when the positioning frame 28 is not used. The blue light from the LED chip 1 can be prevented from leaking.

(実施形態5)
本実施形態の発光装置の基本構成は実施形態3と略同じであって、図5に示すように、メタルプレート25が、絶縁性基板21の上記他表面を含む平面から所定長さ(例えば、0.1mm)だけ突出している点が相違する。なお、実施形態3と同様の構成要素には同一の符号を付して説明を省略する。
(Embodiment 5)
The basic configuration of the light emitting device of the present embodiment is substantially the same as that of the third embodiment. As shown in FIG. 5, the metal plate 25 has a predetermined length from the plane including the other surface of the insulating substrate 21 (for example, The difference is that it protrudes by 0.1 mm). In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 3, and description is abbreviate | omitted.

本実施形態の発光装置では、上述のように、メタルプレート25が、絶縁性基板21の上記他表面を含む平面から0.1mmだけ突出しており、接合部84におけるメタルプレート25直下の部分の厚さが20μm程度、接合部83における外部接続用電極22b直下の部分の厚さが120μm程度となる。   In the light emitting device of this embodiment, as described above, the metal plate 25 protrudes by 0.1 mm from the plane including the other surface of the insulating substrate 21, and the thickness of the portion immediately below the metal plate 25 in the joint portion 84. Is about 20 μm, and the thickness of the portion directly below the external connection electrode 22b in the joint 83 is about 120 μm.

ここで、メタルプレート25の材料をCu、配線基板7の金属板71の材料をAlとした場合、Cuの線膨張率は17ppm/℃、Alの線膨張率は23ppm/℃であり、メタルプレート25と金属板71との線膨張率差が小さいので、接合部84におけるメタルプレート25直下の部分は薄くてもクラックを生じにくい。   Here, when the material of the metal plate 25 is Cu and the material of the metal plate 71 of the wiring board 7 is Al, the linear expansion coefficient of Cu is 17 ppm / ° C., and the linear expansion coefficient of Al is 23 ppm / ° C. 25 and the metal plate 71 have a small difference in linear expansion coefficient, so that even if the portion immediately below the metal plate 25 in the joint 84 is thin, cracks are unlikely to occur.

一方、接合部83における外部接続用電極22b直下の部分に関しては、絶縁性基板21の材料がアルミナの場合、アルミナの線膨張率が7.5ppm/℃であるので、絶縁性基板21と金属板71との線膨張率差が大きく、通電のオンオフによる温度サイクルがかかったときに配線基板7の金属板71と絶縁性基板21との線膨張率差に起因して接合部83に応力が発生して接合部83にクラックが生じる恐れがある。   On the other hand, regarding the portion immediately below the external connection electrode 22b in the joint 83, when the material of the insulating substrate 21 is alumina, the linear expansion coefficient of alumina is 7.5 ppm / ° C., so the insulating substrate 21 and the metal plate 71 has a large difference in linear expansion coefficient, and stress is generated in the joint 83 due to the difference in linear expansion coefficient between the metal plate 71 of the wiring substrate 7 and the insulating substrate 21 when a temperature cycle is applied due to energization on / off. As a result, cracks may occur in the joint 83.

しかしながら、本実施形態の発光装置では、メタルプレート25が、絶縁性基板21の上記他表面を含む平面から0.1mmだけ突出しており、接合部83における外部接続用電極22b直下の部分の厚さが120μmと厚いので、通電のオンオフによる温度サイクルがかかったときに配線基板7の金属板71と絶縁性基板21との線膨張率差に起因して接合部83に生じる応力が緩和され(接合部83の単位厚さ当たりの応力歪みが緩和され)、クラックの発生を抑制することができ、温度サイクルに対する信頼性(接合部83の耐久性)が向上する。   However, in the light emitting device of the present embodiment, the metal plate 25 protrudes by 0.1 mm from the plane including the other surface of the insulating substrate 21, and the thickness of the portion immediately below the external connection electrode 22 b in the joint 83. Is as thick as 120 μm, the stress generated in the joint 83 due to the difference in linear expansion coefficient between the metal plate 71 of the wiring board 7 and the insulating substrate 21 when the temperature cycle is applied by turning on / off the current is reduced (bonding). The stress strain per unit thickness of the portion 83 is alleviated), the occurrence of cracks can be suppressed, and the reliability with respect to the temperature cycle (the durability of the joint portion 83) is improved.

なお、本実施形態の発光装置においても、図4に示した実施形態4の発光装置と同様に、マウント部25を絶縁性基板21の上記一表面を含む平面から突出させたり、位置決め用枠28を設けるようにしてもよい。   In the light emitting device according to the present embodiment, as in the light emitting device according to the fourth embodiment shown in FIG. 4, the mount portion 25 protrudes from the plane including the one surface of the insulating substrate 21 or the positioning frame 28. May be provided.

(実施形態6)
本実施形態の発光装置の基本構成は実施形態5と略同じであって、図6および図7に示すように、メタルプレート25の他表面側(つまり、絶縁性基板21の上記他表面側と同じ面側)に、中央から外側に向かって幅の広くなる複数の溝25dが放射状に形成されている点、メタルプレート25のマウント部25bにおけるLEDチップ1の搭載領域の周囲に当該搭載領域を取り囲むように接合材料溜め用溝25cが形成されている点が相違する。なお、実施形態5と同様の構成要素には同一の符号を付して説明を省略する。
(Embodiment 6)
The basic configuration of the light emitting device of the present embodiment is substantially the same as that of the fifth embodiment. As shown in FIGS. 6 and 7, the other surface side of the metal plate 25 (that is, the other surface side of the insulating substrate 21). On the same surface side, a plurality of grooves 25d that increase in width from the center toward the outside are formed radially, and the mounting region is arranged around the mounting region of the LED chip 1 in the mounting portion 25b of the metal plate 25. The difference is that a bonding material reservoir groove 25c is formed so as to surround it. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 5, and description is abbreviate | omitted.

ここにおいて、各溝25dは、メタルプレート25の上記他表面の中央から外側に向かって幅寸法が徐々に大きくなるとともに深さ寸法も徐々に大きくなっている。   Here, each groove 25d has a width dimension gradually increasing from the center of the other surface of the metal plate 25 to the outside, and a depth dimension gradually increasing.

ところで、各実施形態1〜5のように実装基板2のメタルプレート25を配線基板7の導体パターン74に半田からなる接合部84により接合した構成では、メタルプレート25の上記他表面が平面であり外部接続用電極22bに比べて面積がかなり大きいので、半田の溶融から硬化の過程で発生したフラックスや気泡などに起因して接合部84にボイドが発生する恐れがあり、接合部84にボイドがあると、温度サイクルがかかった時に実装基板2と配線基板7との線膨張率差によって生じる応力変化に起因して、接合部84に、当該接合部84のボイドが基点となってクラックが発生することがある。   By the way, in the configuration in which the metal plate 25 of the mounting board 2 is joined to the conductor pattern 74 of the wiring board 7 by the joining portion 84 made of solder as in each of the first to fifth embodiments, the other surface of the metal plate 25 is flat. Since the area is considerably larger than that of the external connection electrode 22b, there is a possibility that voids are generated in the joint portion 84 due to flux or bubbles generated in the process of melting and hardening of the solder. If there is, a crack occurs in the joint 84 due to a change in the stress caused by the difference in linear expansion coefficient between the mounting board 2 and the wiring board 7 when the temperature cycle is applied. There are things to do.

これに対して、本実施形態の発光装置では、メタルプレート25の上記他表面側に、中央から外側に向かって幅の広くなる溝25dが形成されているので、発光装置を配線基板7に実装して用いるにあたって、図7(b)に示すようにメタルプレート25を配線基板7の導体パターン74に半田84aにより接合する際に、半田84aの溶融から硬化の過程で生じるフラックスなどのガス(図示せず)および気泡86が溝25dに沿って外部に抜けやすくなり、硬化後の半田84aからなる接合部84の内部にボイドが生じるのを抑制することができ良好な熱結合状態を得ることができ、結果的に、LEDチップ1と配線基板7との間の熱抵抗のばらつきを小さくすることができるとともに、温度サイクルがかかった時に実装基板2と配線基板7との線膨張率差によって生じる応力変化に対する接合部84の耐性が高くなって信頼性が向上する。   On the other hand, in the light emitting device according to the present embodiment, since the groove 25d that is wider from the center toward the outside is formed on the other surface side of the metal plate 25, the light emitting device is mounted on the wiring board 7. 7B, when the metal plate 25 is joined to the conductor pattern 74 of the wiring board 7 by the solder 84a as shown in FIG. 7B, a gas such as a flux generated in the process of melting from the solder 84a (FIG. 7B). (Not shown) and bubbles 86 can easily escape to the outside along the groove 25d, and it is possible to suppress the formation of voids in the joint portion 84 made of the cured solder 84a and to obtain a good thermal coupling state. As a result, variation in thermal resistance between the LED chip 1 and the wiring board 7 can be reduced, and when the temperature cycle is applied, the mounting board 2 and the wiring board can be reduced. Resistance of the joint portion 84 to stress changes caused by the difference in linear expansion coefficient between the 7 becomes to be improved reliably.

また、本実施形態の発光装置は、上述のように、メタルプレート25のマウント部25bにおけるLEDチップ1の搭載領域の周囲に接合材料溜め用溝25cが形成されているので、図6(b),(c)に示すようにLEDチップ1をマウント部25bの搭載領域に半田(例えば、AuSnなどの融点の高い半田など)からなる接合部12により接合する際に、LEDチップ1直下から溢れ出た余分な半田12cが接合材料溜め用溝25cに溜まるので、余分な半田12cが絶縁性基板21の上記一表面側の配線パターン21上まで流れ出ることによる短絡を防止することができるとともに、ワイヤボンディングできなくなるワイヤボンディング不良を防止することができる。   Further, in the light emitting device of this embodiment, as described above, the bonding material reservoir groove 25c is formed around the mounting region of the LED chip 1 in the mount portion 25b of the metal plate 25, so that FIG. , (C), when the LED chip 1 is bonded to the mounting region of the mount portion 25b by the bonding portion 12 made of solder (for example, solder having a high melting point such as AuSn), the LED chip 1 overflows from directly below the LED chip 1. Since the excess solder 12c accumulates in the bonding material reservoir groove 25c, it is possible to prevent a short circuit due to the excess solder 12c flowing out onto the wiring pattern 21 on the one surface side of the insulating substrate 21, and wire bonding. It is possible to prevent wire bonding defects that cannot be performed.

なお、本実施形態の発光装置においても、図4に示した実施形態4の発光装置と同様に、マウント部25を絶縁性基板21の上記一表面を含む平面から突出させたり、位置決め用枠28を設けるようにしてもよい。また、他の実施形態1〜5において、メタルプレート25の上記他表面に、本実施形態で説明した複数の溝25dを形成してもよい。また、他の実施形態3〜5において、マウント部25bにおけるLEDチップ1の搭載領域の周囲に、本実施形態で説明した接合材料溜め用溝25cを設けるようにしてもよい。   In the light emitting device according to the present embodiment, as in the light emitting device according to the fourth embodiment shown in FIG. 4, the mount portion 25 protrudes from the plane including the one surface of the insulating substrate 21 or the positioning frame 28. May be provided. In other embodiments 1 to 5, a plurality of grooves 25d described in the present embodiment may be formed on the other surface of the metal plate 25. In other embodiments 3 to 5, the bonding material reservoir groove 25c described in the present embodiment may be provided around the mounting area of the LED chip 1 in the mount portion 25b.

ところで、上述の各実施形態1〜6では、LEDチップ1として、青色光を放射する青色LEDチップを採用しているが、LEDチップ1は青色光を放射するものに限らず、例えば、紫外光を放射するものでもよく、色変換部材4における蛍光体の発光色も特に限定するものではない。   By the way, in each of the above-described first to sixth embodiments, a blue LED chip that emits blue light is adopted as the LED chip 1, but the LED chip 1 is not limited to one that emits blue light, for example, ultraviolet light. The emission color of the phosphor in the color conversion member 4 is not particularly limited.

実施形態1の発光装置を配線基板に実装した状態を示し、(a)は概略平面図、(b)は(a)のA−B概略断面図である。The state which mounted the light-emitting device of Embodiment 1 on the wiring board is shown, (a) is a schematic plan view, (b) is AB schematic sectional drawing of (a). 実施形態2の発光装置を配線基板に実装した状態を示し、(a)は概略平面図、(b)は(a)のA−A’概略断面図である。The state which mounted the light-emitting device of Embodiment 2 on the wiring board is shown, (a) is a schematic plan view, (b) is A-A 'schematic sectional drawing of (a). 実施形態3の発光装置を配線基板に実装した状態を示し、(a)は概略平面図、(b)は(a)のA−A’概略断面図である。The state which mounted the light-emitting device of Embodiment 3 on the wiring board is shown, (a) is a schematic plan view, (b) is A-A 'schematic sectional drawing of (a). 実施形態4の発光装置を配線基板に実装した状態を示し、(a)は概略平面図、(b)は(a)のA−A’概略断面図である。The state which mounted the light-emitting device of Embodiment 4 on the wiring board is shown, (a) is a schematic plan view, (b) is A-A 'schematic sectional drawing of (a). 実施形態5の発光装置を配線基板に実装した状態を示し、(a)は概略平面図、(b)は(a)のA−A’概略断面図である。The state which mounted the light-emitting device of Embodiment 5 in the wiring board is shown, (a) is a schematic plan view, (b) is A-A 'schematic sectional drawing of (a). 実施形態6の発光装置を示し、(a)は配線基板に実装した状態の概略断面図、(b)は要部概略平面図、(c)は要部概略断面図である。The light-emitting device of Embodiment 6 is shown, (a) is a schematic sectional drawing of the state mounted in the wiring board, (b) is a principal part schematic plan view, (c) is a principal part schematic sectional drawing. 同上を示し、(a)はメタルプレートの概略下面図、(b)は要部説明図である。The same as above, (a) is a schematic bottom view of a metal plate, (b) is an explanatory view of the main part. 従来例の発光装置を配線基板に実装した状態の概略断面図である。It is a schematic sectional drawing of the state which mounted the light-emitting device of the prior art example on the wiring board. 同上の説明図である。It is explanatory drawing same as the above.

符号の説明Explanation of symbols

1 LEDチップ
2 実装基板
4 色変換部材
7 配線基板
21 絶縁性基板
21a 切欠部
22 配線パターン
22b 外部接続用電極
25 メタルプレート
25b マウント部
25c 接合材料溜め用溝
25d 溝
73 導体パターン
74 導体パターン
83 接合部
84 接合部
DESCRIPTION OF SYMBOLS 1 LED chip 2 Mounting board 4 Color conversion member 7 Wiring board 21 Insulating board 21a Notch part 22 Wiring pattern 22b Electrode for external connection 25 Metal plate 25b Mount part 25c Groove for joining material reservoir 25d Groove 73 Conductive pattern 74 Conductive pattern 83 Joining Part 84 Joint

Claims (3)

LEDチップと、前記LEDチップが実装された実装基板とを備え、前記実装基板は、一表面側に前記LEDチップに電気的に接続される配線パターンが形成されるとともに他表面と側面とに跨って外部接続用電極が形成された絶縁性基板と、前記絶縁性基板の前記他表面側に埋設され投影視における外周線が前記LEDチップの外周線よりも外側に位置するメタルプレートとを有し、前記絶縁性基板の側面の一部に前記メタルプレートの側面を露出させる切欠部が設けられてなり、前記LEDチップと前記メタルプレートとの間には、前記絶縁性基板の薄肉部があることを特徴とする発光装置。 An LED chip, wherein L ED chip provided with and a mounted board mounted, the implementation substrate, the other surface side with the L ED chip electrically connected to the wiring pattern on one surface side is formed an insulating substrate where the external connection electrodes are formed across the bets, metal wherein embedded in the other surface side peripheral line in the projection view of the insulation substrate is positioned outside the peripheral line of the L ED chip and a plate, the insulation resistance becomes the part of the side surface of the substrate cutout portion for exposing the side surface of the main barrel plate is provided between the LED chip and the metal plate, the insulating A light emitting device having a thin portion of a substrate . 前記実装基板は、前記絶縁性基板の前記他表面側において前記メタルプレートが前記外部接続用電極の表面を含む平面よりも突出していることを特徴とする請求項1記載の発光装置。 The mounting board, the light emitting device according to claim 1, characterized in that protrudes from the plane containing the metal plate before Symbol other surface side of the surface of the external connection electrodes of the insulating substrate. 前記メタルプレートは、前記絶縁性基板の前記他表面側と同じ面側に、中央から外側に向かって幅の広くなる溝が形成されてなることを特徴とする請求項1または請求項2記載の発光装置 The metal plate is the same side as the other surface side of the insulating substrate, from the center of claim 1 or claim 2, wherein the composed is formed becomes wider groove width toward the outside Light emitting device .
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