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JP5064107B2 - Ribbon wire connection method for electronic component module or CIS thin film solar cell module - Google Patents

Ribbon wire connection method for electronic component module or CIS thin film solar cell module Download PDF

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JP5064107B2
JP5064107B2 JP2007124590A JP2007124590A JP5064107B2 JP 5064107 B2 JP5064107 B2 JP 5064107B2 JP 2007124590 A JP2007124590 A JP 2007124590A JP 2007124590 A JP2007124590 A JP 2007124590A JP 5064107 B2 JP5064107 B2 JP 5064107B2
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ribbon wire
solar cell
cis
film solar
cell module
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JP2008282919A (en
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博史 西
博久 鈴木
勝巳 櫛屋
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Showa Shell Sekiyu KK
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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Description

本発明は、ガラス基板上に実装される電子部品モジュール又はＣＩＳ系薄膜太陽電池モジュールのリボンワイヤ（扁平出力導線）の接続方法に関する。   The present invention relates to a method for connecting a ribbon wire (flat output conductor) of an electronic component module or a CIS-based thin film solar cell module mounted on a glass substrate.

ＣＩＳ系（ＣＩＳ、ＣＩＧＳ、ＣＩＧＳＳ等を含む総称）薄膜太陽電池モジュールは、ガラス基板上に、金属裏面電極層、その他のＣＩＳ系薄膜太陽電池モジュールの構成部材の順に形成された積層構造体であり、前記ガラス基板端部の金属裏面電極層からなる出力電極にリボンワイヤ（扁平出力導線）を接続する場合、通常銅の表面にＳｎを電気メッキ又は溶融メッキしたＳｎメッキ銅箔からなるリボンワイヤを使用して、超音波ハンダコテによりハンダ付けするが、前記金属裏面電極層の材質により、この電極層と前記Ｓｎメッキ銅箔からなるリボンワイヤを直接ハンダ付けできないことがある。   A CIS-based (generic name including CIS, CIGS, CIGSS, etc.) thin-film solar cell module is a laminated structure formed on a glass substrate in the order of a metal back electrode layer and other constituent members of the CIS-based thin-film solar cell module. When a ribbon wire (flat output conductor) is connected to the output electrode composed of the metal back electrode layer at the end of the glass substrate, a ribbon wire composed of Sn-plated copper foil obtained by electroplating or hot-plating Sn is usually applied to the surface of copper. It is used and soldered by an ultrasonic soldering iron, but depending on the material of the metal back electrode layer, the electrode layer and the ribbon wire made of the Sn plated copper foil may not be soldered directly.

薄膜太陽電池モジュールの電極とリード線の接続方法において、ガラス基板上の電極（透明導電膜）にハンダバンプを介してハンダディプリード線（銅箔にハンダを被覆）を超音波ハンダコテによりハンダ付けする方法があり、超音波ハンダコテは、温度３００℃、超音波出力３Ｗ、ハンダ付け時間１Ｓであり、ハンダディプリード線のハンダの組成は、Ｓｎを主成分とし、Ａｇを２．５〜７．７重量％、かつ、Ｃｕを０．０〜４．０重量％含み、ハンダバンプのハンダの組成は、Ｓｎを主成分とし、Ｚｎを２．５〜４．０重量％、Ｓｂを０．５〜３．０重量％、かつＡｌを０．０２〜０．１重量％含む（例えば、特許文献１参照。）。前記接続方法は、ハンダディプリード線及び超音波ハンダコテを使用しているが、ガラス基板上の電極（透明導電膜）にハンダディプリード線を直接接続するものではなく、ハンダバンプを必要とし、ハンダバンプのハンダの組成も主成分がＩｎではない。   In the thin film solar cell module electrode and lead wire connecting method, solder dip lead wire (copper foil is covered with solder) is soldered to the electrode (transparent conductive film) on the glass substrate via solder bumps by ultrasonic soldering iron. The ultrasonic soldering iron has a temperature of 300 ° C., an ultrasonic output of 3 W, and a soldering time of 1 S. The solder composition of the solder dip lead wire is mainly composed of Sn, and Ag is 2.5 to 7.7 weight. % And Cu is 0.0 to 4.0% by weight, and the solder composition of the solder bumps is mainly composed of Sn, 2.5 to 4.0% by weight of Zn, and 0.5 to 3.3% of Sb. 0% by weight and 0.02 to 0.1% by weight of Al (see, for example, Patent Document 1). The connection method uses a solder dip lead wire and an ultrasonic soldering iron, but does not directly connect the solder dip lead wire to the electrode (transparent conductive film) on the glass substrate, and requires a solder bump. The main component of the solder is not In.

集積型太陽電池モジュールのバスバーと引出し線の接続方法において、集積型太陽電池素子の表面にバスバーを形成し、このバスバーの上に銅の表面にＩｎとＳｎとを含む合金、又はＩｎとＧａとＳｎとを含む合金からなる導電性接着部を形成した引出し線を載せ、更に、その上から太陽電池素子を覆う熱可塑性フィルムを覆い、１５０〜１６０℃の温度で加熱することにより、熱可塑性フィルムを架橋させると共に、前記引出し線をバスバーに導電性接着（圧着）する（例えば、特許文献２参照。）。前記接続方法は、加熱方法は超音波ハンダコテを使用するものではなく、また、ガラス基板上の電極（透明導電膜）に引出し線を（バスバーを介して接続するもので、）直接接続するものではないし、その引出し線の被覆部である導電性接着部はＩｎを主成分とするもので、Ｓｎを主成分とするものではない。   In a method for connecting a bus bar and a lead wire of an integrated solar cell module, a bus bar is formed on the surface of the integrated solar cell element, and an alloy containing In and Sn on the surface of copper on the bus bar, or In and Ga, A thermoplastic film is formed by placing a lead wire on which a conductive adhesive portion made of an alloy containing Sn is formed, covering a thermoplastic film covering the solar cell element from above, and heating at a temperature of 150 to 160 ° C. The lead wire is conductively bonded (crimped) to the bus bar (see, for example, Patent Document 2). As for the connection method, the heating method does not use an ultrasonic soldering iron, and the lead wire is connected directly to the electrode (transparent conductive film) on the glass substrate (via the bus bar). In addition, the conductive adhesive portion which is the covering portion of the lead wire is mainly composed of In and not based on Sn.

薄膜太陽電池モジュールの裏面電極層とバスバーの接続方法において、ガラス基板（受光面側）上に設けられた薄膜太陽電池モジュールの裏面電極層（非受光面側）に導電性ペーストを塗布し、この上に金属箔の表面にＳｎ−Ｐｂ合金又はＳｎを含みＰｂを含まない合金ハンダを被覆した金属箔からなるバスバーを配置し、パルスヒーターにより１８０〜２３０℃の温度で加熱することにより、裏面電極層とバスバーを接続する（例えば、特許文献３参照。）。前記接続方法は、加熱方法は超音波ハンダコテを使用するものではなく、ガラス基板上の電極（透明導電膜）に引出し線（バスバー）を接続するものではないし、また、導電性ペーストもＩｎを主成分とするものではない。   In the method of connecting the back electrode layer of the thin film solar cell module and the bus bar, a conductive paste is applied to the back electrode layer (non-light receiving surface side) of the thin film solar cell module provided on the glass substrate (light receiving surface side). A back bar electrode is formed by placing a bus bar made of a metal foil coated with an Sn-Pb alloy or Sn-free alloy solder on the surface of the metal foil and heating it at a temperature of 180 to 230 ° C. with a pulse heater. The layer and the bus bar are connected (for example, refer to Patent Document 3). As for the connection method, the heating method does not use an ultrasonic soldering iron, and does not connect the lead wire (bus bar) to the electrode (transparent conductive film) on the glass substrate, and the conductive paste is mainly made of In. It is not an ingredient.

また、本出願人においては、ガラス基板１Ａ上に積層形成されたＣＩＳ系薄膜太陽電池モジュール１のリボンワイヤの接続方法として、図７に示すように、ガラス基板１Ａの端部上の極薄の金属裏面電極層（出力電極）１Ｃに通常のハンダ、例えば、Ｓｎ４０％、Ｐｂ６０％ハンダを載せ、銅箔２ＡにＳｎメッキ２Ｂしたリボンワイヤ（扁平出力導線）２を載せ、このリボンワイヤ２の上に超音波ハンダコテ４を当て、極薄の金属裏面電極層１Ｃにリボンワイヤ２を接続する方法を採っていたが、接着強度不足及び熱膨張係数の違いよる金属裏面電極層１Ｃの剥離又は破損という問題があった。なお、この場合、ＣＩＳ系薄膜太陽電池モジュール１は受光面側にカバーガラス（図示省略。）を設置し、ＣＩＳ系薄膜太陽電池モジュール１は前記ガラス基板１Ａとカバーガラスにより挟まれたサンドイッチ構造となるため、前記リボンワイヤ２と金属裏面電極層（出力電極）１Ｃとの接着力が多少小さくても問題とはならない。 Moreover, in this applicant, as shown in FIG. 7 , as a connection method of the ribbon wire of the CIS type thin film solar cell module 1 laminated on the glass substrate 1A, as shown in FIG. On the metal back electrode layer (output electrode) 1C, normal solder, for example, Sn 40%, Pb 60% solder is mounted, and a ribbon wire (flat output conductor) 2 plated with Sn 2B is mounted on the copper foil 2A. The method of connecting the ribbon wire 2 to the ultra-thin metal back electrode layer 1C by applying an ultrasonic soldering iron 4 to the surface is referred to as peeling or breakage of the metal back electrode layer 1C due to insufficient adhesive strength and a difference in thermal expansion coefficient. There was a problem. In this case, the CIS thin film solar cell module 1 has a cover glass (not shown) on the light receiving surface side, and the CIS thin film solar cell module 1 has a sandwich structure sandwiched between the glass substrate 1A and the cover glass. Therefore, there is no problem even if the adhesive force between the ribbon wire 2 and the metal back electrode layer (output electrode) 1C is somewhat small.

特開２００６−３１９２１５号公報JP 2006-319215 A 特開２００３−１４２７０３号公報JP 2003-142703 A 特開２００２−３１４１０４号公報JP 2002-314104 A

本発明は前記問題点を解消するもので、本発明の目的は、ＣＩＳ系薄膜太陽電池モジュールのガラス基板上の極薄のＭｏ等からなる金属裏面電極とリボンワイヤの接続のように、ハンダ付けし難く、かつ機械的強度が低い（脆い）ガラス基板上の極薄の金属裏面電極層とＳｎメッキ銅箔リボンワイヤとの接続を、低コストで、簡単かつ確実（所定の接着強度を有する）に行うことである。   The present invention solves the above-mentioned problems, and the object of the present invention is to solder a metal back electrode made of ultrathin Mo or the like on a glass substrate of a CIS-based thin film solar cell module and a ribbon wire. Low-cost, simple and reliable connection with an ultra-thin metal back electrode layer on a glass substrate that is difficult to perform and has low mechanical strength (brittle) (having a predetermined adhesive strength) To do.

本発明は、ＣＩＳ系薄膜太陽電池モジュールにおける、ハンダ付けし難く、かつ機械的強度が低い（脆い）ガラス基板上の極薄の金属裏面電極層とＳｎメッキ銅箔リボンワイヤとの接続を、高価なＩｎハンダの使用量を削減して生産コストを低減し、前記接続を簡単かつ強固にすることが可能な接続方法を提供すると共に、前記接続工程で、電極膜又は導電膜を破損することなく、ガラス基板及び接続材料間の熱膨張係数の差による歪み又は破損を防止することである。   The present invention provides a connection between an ultrathin metal back electrode layer on a glass substrate that is difficult to solder and has low mechanical strength (brittleness) and a Sn-plated copper foil ribbon wire in a CIS thin film solar cell module. In addition to providing a connection method capable of reducing the production cost by reducing the amount of In solder used, making the connection easy and strong, and without damaging the electrode film or the conductive film in the connection step It is to prevent distortion or breakage due to the difference in thermal expansion coefficient between the glass substrate and the connecting material.

（１）本発明は、前記問題点を解消するもので、ガラス基板上に、金属裏面電極層、ｐ型ＣＩＳ系（ＣＩＳ、ＣＩＧＳ、ＣＩＧＳＳ等を含む総称。）光吸収層、ｎ型高抵抗バッファ層、ｎ型透明導電膜からなる窓層の順に積層されたＣＩＳ系薄膜太陽電池デバイスを複数個、特定の電圧となるようにパターニングにより電気的に直列に接続したＣＩＳ系薄膜太陽電池モジュールの出力電極である金属裏面電極層にリボンワイヤ（扁平出力導線）を接続するＣＩＳ系薄膜太陽電池モジュールのリボンワイヤの接続方法に関するものである。 (1) The present invention solves the above-mentioned problems. On a glass substrate, a metal back electrode layer, a p-type CIS system (generic name including CIS, CIGS, CIGSS, etc.) light absorption layer, n-type high resistance A CIS thin film solar cell module in which a plurality of CIS thin film solar cell devices laminated in the order of a buffer layer and a window layer made of an n-type transparent conductive film are electrically connected in series by patterning so as to have a specific voltage. The present invention relates to a method for connecting a ribbon wire of a CIS-based thin film solar cell module in which a ribbon wire (flat output conducting wire) is connected to a metal back electrode layer that is an output electrode.

本発明は、前記ＣＩＳ系薄膜太陽電池モジュールのリボンワイヤの接続方法であって、前記ガラス基板端部上の極薄の金属裏面電極層からなる出力電極に金属導体（例えば、銅）箔にＳｎメッキしたリボンワイヤを接続する際、前記出力電極上面（全面）にＰｂ以外の融点の低いハンダを、予め、予備ハンダした後、前記出力電極に、前記リボンワイヤを載せ、リボンワイヤの上に超音波ハンダコテを当て、超音波ハンダコテにより前記予備ハンダを溶融させて前記出力電極に前記リボンワイヤをハンダ付けするＣＩＳ系薄膜太陽電池モジュールのリボンワイヤの接続方法である。 The present invention is a method for connecting a ribbon wire of the CIS-based thin film solar cell module, wherein an output electrode comprising an ultrathin metal back electrode layer on an end portion of the glass substrate is provided with a metal conductor (for example, copper) foil and Sn. When connecting the plated ribbon wire, a solder having a low melting point other than Pb is preliminarily soldered on the upper surface (entire surface) of the output electrode, and then the ribbon wire is placed on the output electrode and superposed on the ribbon wire. This is a method for connecting a ribbon wire of a CIS-based thin film solar cell module, in which a sonic soldering iron is applied, the preliminary solder is melted by an ultrasonic soldering iron, and the ribbon wire is soldered to the output electrode .

そして、本発明は、前記予備ハンダの材質が、Ｉｎ又はＩｎとＡｇの合金からなるものである。In the present invention, the preliminary solder is made of In or an alloy of In and Ag.

（２）本発明は、前記予備ハンダが、前記出力電極のハンダ付けする位置（箇所）及びそれを取り囲む領域にハンダ付けする前記（１）に記載のＣＩＳ系薄膜太陽電池モジュールのリボンワイヤの接続方法である。(2) The present invention relates to the connection of the ribbon wire of the CIS-based thin-film solar cell module according to (1), wherein the spare solder is soldered to a soldering position (location) of the output electrode and a region surrounding the soldering position. Is the method.

（３）本発明は、前記超音波ハンダコテの周波数は、４０〜８０ｋＨｚで、超音波ハンダコテのコテ先温度は、３５０〜４５０℃である前記（１）又は（２）に記載のＣＩＳ系薄膜太陽電池モジュールのリボンワイヤの接続方法である。 ( 3 ) In the present invention, the frequency of the ultrasonic soldering iron is 40 to 80 kHz, and the tip temperature of the ultrasonic soldering iron is 350 to 450 ° C. The CIS-based thin film solar according to (1) or (2) It is the connection method of the ribbon wire of a battery module.

（４）本発明は、前記超音波ハンダコテによりハンダ付けは、ハンダ付け対象部の寸法（距離）が長い場合、スポット状に一定間隔、５ｃｍ〜２５ｃｍ間隔で分散して複数箇所ハンダ付けを行う前記（１）、（２）又は（３）に記載のＣＩＳ系薄膜太陽電池モジュールのリボンワイヤの接続方法である。 ( 4 ) In the present invention, when the size (distance) of the soldering target portion is long, the soldering by the ultrasonic soldering iron is performed in a spot-like manner at a fixed interval, 5 cm to 25 cm, and soldering at a plurality of locations. (1) It is the connection method of the ribbon wire of the CIS type thin film solar cell module as described in (2) or (3).

本発明のリボンワイヤの接続方法により、ハンダ付けし難く、かつ機械的強度が低い（脆い）ガラス基板上の極薄のＭｏ等の金属裏面電極層とＳｎメッキ銅箔リボンワイヤとの接続を、低コストで、簡単かつ確実（所定の接着強度を有する）に行うことができる。   By the method for connecting the ribbon wire of the present invention, the connection between the metal back electrode layer such as ultrathin Mo on the glass substrate which is difficult to solder and has low mechanical strength (brittle) and the Sn plated copper foil ribbon wire, It can be performed easily and reliably (having a predetermined adhesive strength) at low cost.

本発明のリボンワイヤの接続方法により、ハンダ付けし難く、かつ機械的強度が低い（脆い）ガラス基板上の極薄のＭｏ等の金属裏面電極層とＳｎメッキ銅箔リボンワイヤとの接続を、高価なＩｎハンダの使用量を削減して生産コストを低減し、簡単かつ強固にすると共に、前記接続工程で、金属裏面電極層を破損することなく、ガラス基板、極薄の金属裏面電極層及びリボンワイヤという接続材料間の熱膨張係数の差による歪み又は破損を防止することである。   By the method for connecting the ribbon wire of the present invention, the connection between the metal back electrode layer such as ultrathin Mo on the glass substrate which is difficult to solder and has low mechanical strength (brittle) and the Sn plated copper foil ribbon wire, Reducing the amount of expensive In solder used, reducing production costs, making it simple and robust, and without damaging the metal back electrode layer in the connection step, the glass substrate, the ultrathin metal back electrode layer and It is to prevent distortion or breakage due to a difference in thermal expansion coefficient between connecting materials called ribbon wires.

本発明は、ＣＩＳ系（ＣＩＳ、ＣＩＧＳ、ＣＩＧＳＳ等を含む総称）薄膜太陽電池モジュール１の出力電極である極薄の金属裏面電極層にリボンワイヤ（扁平出力導線）を接続するＣＩＳ系薄膜太陽電池モジュールのリボンワイヤの接続方法に関する。ＣＩＳ系薄膜太陽電池モジュール１は、複数のＣＩＳ系薄膜太陽電池デバイス１’が導電パターンにより電気的に接続されたものであり、ＣＩＳ系薄膜太陽電池デバイス１’は、図４に示すように、ガラス基板１Ａ上に、アルカリバリア層１Ｂ（必要に応じて設けなくてもよい。）、金属裏面電極層（Ｍｏが最適。）１Ｃ、ｐ型ＣＩＳ系光吸収層１Ｄ、ｎ型高抵抗バッファ層１Ｅ、ｎ型透明導電膜窓層１Ｆの順に高品質薄膜層が順次積層されたサブストレート構造のｐｎヘテロ接合デバイスである。   The present invention is a CIS-based thin film solar cell in which a ribbon wire (flat output conductor) is connected to an ultrathin metal back electrode layer that is an output electrode of a CIS-based (generic name including CIS, CIGS, CIGSS, etc.) thin-film solar cell module 1. The present invention relates to a method for connecting a ribbon wire of a module. The CIS-based thin-film solar cell module 1 is obtained by electrically connecting a plurality of CIS-based thin-film solar cell devices 1 ′ by a conductive pattern. As shown in FIG. On the glass substrate 1A, an alkali barrier layer 1B (may be omitted if necessary), a metal back electrode layer (Mo is optimal) 1C, a p-type CIS light absorption layer 1D, an n-type high resistance buffer layer 1E, a pn heterojunction device having a substrate structure in which high-quality thin film layers are sequentially laminated in the order of an n-type transparent conductive film window layer 1F.

前記光吸収層１Ｄは、多元化合物半導体薄膜、特に、I-III-VI2 族カルコパイライト半導体、例えば、２セレン化銅インジウム(CuInSe2) 、２セレン化銅インジウム・ガリウム(CuInGaSe2) 、２セレン化銅ガリウム(CuGaSe2) 、２セレン・イオウ化銅インジウム・ガリウム(Cu(InGa)(SSe)2 ) 、２イオウ化銅インジウム(CuInS2 ) 、２イオウ化銅ガリウム(CuGaS2)、２イオウ化銅インジウム・ガリウム(CuInGaS2)、薄膜の２セレン・イオウ化銅インジウム・ガリウム(Cu(InGa)(SSe)2)を表面層として有する２セレン化銅インジウム・ガリウム(CuInGaSe2) のようなｐ型半導体からなる。なお、前記光吸収層１Ｄは前記のように、ＣＩＳ、ＣＩＧＳ、ＣＩＧＳＳ等からなり、このような光吸収層１Ｄを構成要件とする薄膜太陽電池モジュールを総称してＣＩＳ系薄膜太陽電池モジュールという。 The light absorption layer 1D is a multi-component compound semiconductor thin film, in particular, an I-III-VI group 2 chalcopyrite semiconductor, for example, copper indium selenide (CuInSe 2 ), copper indium selenide (CuInGaSe 2 ), 2 Copper gallium selenide (CuGaSe 2 ), 2 selenium, copper indium sulfide, gallium (Cu (InGa) (SSe) 2 ), copper indium disulfide (CuInS 2 ), copper gallium disulfide (CuGaS 2 ), 2 sulfur copper indium gallium (CuInGaS 2), as 2 selenium sulfur copper indium gallium thin film (Cu (InGa) (SSe) 2) 2 copper indium selenide gallium having a surface layer (CuInGaSe 2) Made of a p-type semiconductor. As described above, the light absorption layer 1D is made of CIS, CIGS, CIGSS, and the like. The thin film solar cell module having such a light absorption layer 1D as a constituent element is collectively referred to as a CIS-based thin film solar cell module.

本発明のＣＩＳ系薄膜太陽電池モジュールのリボンワイヤの接続方法の詳細を以下に説明する。図１（（ａ）、（ｂ））及び図２に示すように、前記ガラス基板１Ａの端部上の極薄のＭｏ等の金属裏面電極層（出力電極）１Ｃに、金属導体（例えば、銅）箔にＳｎメッキしたリボンワイヤ（扁平出力導線）２を接続する際、前記金属裏面電極層１Ｃの上面（接着面全面）にＰｂ以外の融点の低いハンダ（Ｉｎが最適である。）を、予め、予備ハンダ３した後、前記金属裏面電極層１Ｃに、前記リボンワイヤ２を載せ、このリボンワイヤ２の上に超音波ハンダコテ４を当て、超音波ハンダコテ４により前記予備ハンダ３を溶融させて金属裏面電極層１Ｃにリボンワイヤ２をハンダ付けする。この方法の場合、ガラス基板１Ａ（厚さ１．８〜２．０ｍｍ）、リボンワイヤ２（厚さ約０．１６ｍｍ）と比較して、金属裏面電極層１Ｃ（厚さ１００〜２０００ｎｍ）は極めて薄く、特に、材質がＭｏのように比較的脆い材質であっても、ガラス基板１Ａ上の極薄の金属裏面電極層１ＣとＳｎメッキ銅箔リボンワイヤ２との接続を、低コストで、簡単かつ確実（所定の接着強度を有する）に行うことができると共に、ガラス基板、極薄の金属裏面電極層及びリボンワイヤという接続材料間の熱膨張係数の差による歪み又は破損を防止することができる。なお、前記図１（ｂ）は図１（ａ）の矢印Ａ方向から見た図であり、図２は図１（ａ）の矢印Ｂ方向から見た図である。   Details of the method for connecting the ribbon wire of the CIS-based thin film solar cell module of the present invention will be described below. As shown in FIG. 1 ((a), (b)) and FIG. 2, a metal conductor (for example, an ultrathin metal back electrode layer (output electrode) 1C such as Mo on the end of the glass substrate 1A is used. When connecting a Sn-plated ribbon wire (flat output conductor) 2 to a (copper) foil, solder having a low melting point other than Pb (In is optimal) is applied to the upper surface (the entire adhesive surface) of the metal back electrode layer 1C. After preliminarily soldering 3 in advance, the ribbon wire 2 is placed on the metal back electrode layer 1 </ b> C, an ultrasonic soldering iron 4 is applied onto the ribbon wire 2, and the preliminary soldering 3 is melted by the ultrasonic soldering iron 4. Then, the ribbon wire 2 is soldered to the metal back electrode layer 1C. In this method, the metal back electrode layer 1C (thickness 100 to 2000 nm) is extremely different from the glass substrate 1A (thickness 1.8 to 2.0 mm) and the ribbon wire 2 (thickness about 0.16 mm). Even if the material is thin, especially a relatively fragile material such as Mo, the connection between the ultrathin metal back electrode layer 1C on the glass substrate 1A and the Sn-plated copper foil ribbon wire 2 can be easily performed at low cost. In addition, it can be performed reliably (having a predetermined adhesive strength), and distortion or breakage due to the difference in thermal expansion coefficient between the glass substrate, the ultrathin metal back electrode layer, and the ribbon wire can be prevented. . 1 (b) is a view seen from the direction of arrow A in FIG. 1 (a), and FIG. 2 is a view seen from the direction of arrow B in FIG. 1 (a).

また、量産品のＣＩＳ系薄膜太陽電池モジュールはその接続部分の寸法が比較的長いので、（例えば、３０ｃｍ〜１．２ｍ程である。）ので、図３に示すように、前記金属裏面電極層１Ｃの上面のハンダ付け箇所（５ｃｍ〜２５ｃｍ間隔で分散）に、Ｐｂ以外の融点の低いハンダ（Ｉｎが最適である。）を、予備ハンダ３した後、スポット状（その予備ハンダした箇所）に一定間隔、５ｃｍ〜２５ｃｍ間隔で分散して複数箇所ハンダ付けを行う。その結果、高価なハンダ材料であるＩｎの使用量が削減され、製造コストを減少することができる。なお、前記図３は、図１（ａ）の矢印Ｂ方向から見た図である。   Moreover, since the size of the connection part of the mass-produced CIS-based thin-film solar cell module is relatively long (for example, about 30 cm to 1.2 m), as shown in FIG. Solder with a low melting point other than Pb (In is optimal) is soldered to the soldering location on the upper surface of 1C (dispersed at intervals of 5 cm to 25 cm), and after preliminarily soldering 3, it is spot-shaped (the location where the preliminary soldering is performed) Soldering is performed at a plurality of locations at regular intervals and at intervals of 5 cm to 25 cm. As a result, the amount of In used as an expensive solder material is reduced, and the manufacturing cost can be reduced. Note that FIG. 3 is a view seen from the direction of arrow B in FIG.

前記超音波ハンダコテ４の周波数を、４０〜８０ｋＨｚで、超音波ハンダコテのコテ先温度を、３５０〜４５０℃にすることにより、予備ハンダ３であるＩｎ又はＩｎとＡｇの合金を、ガラス基板１Ａ上に設けたＭｏからなる金属裏面電極層１Ｃにハンダ付けできる。コテ先温度が前記温度範囲であっても、コテ先が１箇所に留まっていないので、ガラス基板１Ａ及びその他のＣＩＳ系薄膜太陽電池モジュールの構成部材に与える影響は少ない。新しいハンダをコテ先に供給してガラス基板１Ａ上のＭｏからなる金属裏面電極層１Ｃとリボンワイヤ２を接着させるとその接着箇所はハンダ層の厚さがやや厚くなり、リボンワイヤ２と予備ハンダ３の接着強度が増加する。このような接着箇所を１５ｃｍ〜２５ｃｍ間隔で行うことにより、部分的に接着強度の大きい箇所ができる。その前後の位置では、リボンワイヤ２は金属裏面電極層１Ｃに接触している状態である。   By setting the frequency of the ultrasonic soldering iron 4 to 40 to 80 kHz and the tip temperature of the ultrasonic soldering iron to 350 to 450 ° C., the alloy of In or In and Ag as the preliminary soldering 3 is formed on the glass substrate 1A. Can be soldered to the metal back electrode layer 1C made of Mo. Even if the iron tip temperature is within the above temperature range, the iron tip does not remain in one place, so there is little influence on the glass substrate 1A and other constituent members of the CIS thin film solar cell module. When new solder is supplied to the iron tip and the metal back electrode layer 1C made of Mo on the glass substrate 1A is bonded to the ribbon wire 2, the thickness of the solder layer becomes slightly thicker at the bonded portion, and the ribbon wire 2 and spare solder are bonded. 3 increases the adhesive strength. By performing such an adhesion location at intervals of 15 cm to 25 cm, a location where the adhesive strength is partially high is formed. At the front and back positions, the ribbon wire 2 is in contact with the metal back electrode layer 1C.

前記一定間隔で分散して複数箇所ハンダ付けを行う接続方法におけるリボンワイヤ（扁平出力導線）２とＭｏからなる金属裏面電極層１Ｂとの接着強度試験の測定結果を図５に示す。ハンダ付けした箇所の接着強度は、０．６ｋｇ〜１．０ｋｇの範囲であり、満足する接着強度であると考えられる。リボンワイヤ２と金属裏面電極層１Ｂとの接着強度は、リボンワイヤ２をガラス基板１Ａ（上の金属裏面電極層１Ｂ）に対して直角（垂直）に引張り、その先にプルテスターを取り付けておくことにより、引張り強度（接着強度）として確認できる。前記測定結果において、高い数値を得た箇所は、超音波ハンダコテ４の使用により、ハンダが溶融し金属裏面電極層１Ｂと合金を形成し、これがガラス基板１Ａと接着しているため大きな接着強度が得られると推測される。（ハンダが金属裏面電極層１Ｂを貫いてガラス基板の表面と接着している可能性がある。）   FIG. 5 shows the measurement results of the adhesive strength test between the ribbon wire (flat output conductor) 2 and the metal back electrode layer 1B made of Mo in the connection method in which the soldering is performed at a plurality of locations dispersed at a constant interval. The adhesive strength of the soldered portion is in the range of 0.6 kg to 1.0 kg, which is considered to be satisfactory adhesive strength. The adhesive strength between the ribbon wire 2 and the metal back electrode layer 1B is such that the ribbon wire 2 is pulled perpendicularly (perpendicular) to the glass substrate 1A (the upper metal back electrode layer 1B), and a pull tester is attached to the tip. This can be confirmed as tensile strength (adhesive strength). In the measurement results, a high numerical value is obtained by using the ultrasonic soldering iron 4 so that the solder is melted to form an alloy with the metal back electrode layer 1B, which is bonded to the glass substrate 1A, and thus has a large adhesive strength. Presumed to be obtained. (Solder may penetrate the metal back electrode layer 1B and adhere to the surface of the glass substrate.)

なお、前記測定結果においては、引っ張り強度の単位はｋｇであるが、これをｋＰａに換算すると、１ｋｇは９８ｋＰａ（リボンワイヤの幅２ｍｍ、ハンダ付け関与長さ５ｍｍとして、その面積１×１０-5ｍ2 、１ｋｇｆ＝９．８Ｎ、）となり、前記測定結果の引っ張り強度０．６〜１ｋｇは十分な引っ張り強度であると認識される。 In the measurement results, the unit of tensile strength is kg, but when converted to kPa, 1 kg is 98 kPa (the ribbon wire has a width of 2 mm and a soldering length of 5 mm, and its area is 1 × 10 −5. m 2 , 1 kgf = 9.8 N), and the tensile strength of 0.6 to 1 kg in the measurement result is recognized as a sufficient tensile strength.

因みに、前記一定間隔で分散して複数箇所ハンダ付けを行う接続方法におけるリボンワイヤ２とガラス基板１Ａ（金属裏面電極層１Ｂを介さずに）との接着強度試験の測定結果、即ち、ガラス基板１Ａ上のハンダ付け箇所に、図５の場合と同様に、Ｉｎ又はＩｎとＡｇの合金からなる予備ハンダ３を載置又は溶かし、その上にＳｎメッキ銅箔リボンワイヤ２を載置し、ハンダ付け箇所のリボンワイヤ２の上から超音波ハンダコテ４を当ててガラス基板１Ａにリボンワイヤ２を接着した場合の接着強度の測定結果、を図６に示す。Ｉｎ又はＩｎとＡｇの合金からなる予備ハンダ３を行い、超音波ハンダコテ４によりハンダ付けすることにより、ハンダ付け箇所では、リボンワイヤ２とガラス基板１Ａとの間で０．４〜０．６ｋｇの引っ張り強度が得られ、前記図５に示した引っ張り強度（０．６〜１ｋｇ）と比較すると多少小さいがこれだけでも必要程度の引っ張り強度を有するものである。   Incidentally, the measurement result of the adhesive strength test between the ribbon wire 2 and the glass substrate 1A (without the metal back electrode layer 1B) in the connection method in which the soldering is performed at a plurality of positions dispersed at a constant interval, that is, the glass substrate 1A. As in the case of FIG. 5, the preliminary solder 3 made of In or an alloy of In and Ag is placed or melted on the upper soldering place, and the Sn-plated copper foil ribbon wire 2 is placed thereon and soldered. FIG. 6 shows the measurement results of the adhesive strength when the ultrasonic soldering iron 4 is applied from above the ribbon wire 2 and the ribbon wire 2 is bonded to the glass substrate 1A. Preliminary solder 3 made of In or an alloy of In and Ag is performed, and soldering is performed with an ultrasonic soldering iron 4, so that 0.4 to 0.6 kg is applied between the ribbon wire 2 and the glass substrate 1A. Tensile strength is obtained, which is slightly smaller than the tensile strength (0.6 to 1 kg) shown in FIG.

前記のように、ハンダ付け箇所にＩｎ又はＩｎとＡｇの合金からなる予備ハンダ３を行い、超音波ハンダコテ４により、リボンワイヤ２とＭｏからなる金属裏面電極層１Ｂをハンダ付けする本発明の接続方法におけるリボンワイヤ２と金属裏面電極層１Ｂとの間の接着力（図５参照。）は、ハンダ付け箇所にＩｎ又はＩｎとＡｇの合金からなる予備ハンダ３を行い、超音波ハンダコテ４により、リボンワイヤ２と金属裏面電極層１Ｂをハンダ付けした場合のリボンワイヤ２とガラス基板１Ａとの間の接着力（図６参照。）と比較して、より大きい引っ張り強度が得られ、ガラス板間にサンドイッチ構造された太陽電池モジュールの場合は勿論、ガラスサンドイッチ構造でない太陽電池モジュールにおいても、耐久性及び電気性能を十分満足することができる。   As described above, the preliminary soldering 3 made of In or an alloy of In and Ag is performed at the soldering place, and the metal back electrode layer 1B made of the ribbon wire 2 and Mo is soldered by the ultrasonic soldering iron 4 according to the present invention. In the method, the adhesive force between the ribbon wire 2 and the metal back electrode layer 1B (see FIG. 5) is obtained by performing preliminary soldering 3 made of an alloy of In or In and Ag at a soldering position, and using an ultrasonic soldering iron 4 Compared with the adhesive force (see FIG. 6) between the ribbon wire 2 and the glass substrate 1A when the ribbon wire 2 and the metal back electrode layer 1B are soldered, a greater tensile strength is obtained, and the gap between the glass plates The solar cell module having a sandwich structure as well as the solar cell module not having a glass sandwich structure sufficiently satisfy the durability and electrical performance. It is possible.

（ａ）本発明のＣＩＳ系薄膜太陽電池モジュールのリボンワイヤの接続方法を示す概略図（平面図）である。 （ｂ）本発明のＣＩＳ系薄膜太陽電池モジュールのリボンワイヤの接続方法において、予備ハンダを金属裏面電極層の上面に一様にハンダ付けした場合を示す概略図（正面図：図１（ａ）の矢印Ａ方向から見た図）である。(A) It is the schematic (plan view) which shows the connection method of the ribbon wire of the CIS type thin film solar cell module of this invention. (B) Schematic (front view: FIG. 1 (a)) showing a case where spare solder is uniformly soldered to the upper surface of the metal back electrode layer in the ribbon wire connecting method of the CIS-based thin film solar cell module of the present invention. (The figure seen from the arrow A direction). 本発明のＣＩＳ系薄膜太陽電池モジュールのリボンワイヤの接続方法を示す概略図（側面図：図１（ａ）の矢印Ｂ方向から見た図）である。It is the schematic (side view: the figure seen from the arrow B direction of Fig.1 (a)) which shows the connection method of the ribbon wire of the CIS type thin film solar cell module of this invention. 本発明のＣＩＳ系薄膜太陽電池モジュールのリボンワイヤの接続方法において、予備ハンダを金属裏面電極層の上面の超音波ハンダ付けを行う箇所のみにハンダ付けした場合を示す概略図（正面図：図１（ａ）の矢印Ａ方向から見た図）である。Schematic (front view: FIG. 1) which shows the case where the spare solder is soldered only to the part which ultrasonically solders on the upper surface of a metal back surface electrode layer in the connection method of the ribbon wire of the CIS type thin film solar cell module of this invention. It is the figure seen from the arrow A direction of (a). 本発明のＣＩＳ系薄膜太陽電池モジュールを構成するＣＩＳ系薄膜太陽電池デバイスの概略構成図（断面図）である。It is a schematic block diagram (sectional drawing) of the CIS type thin film solar cell device which comprises the CIS type thin film solar cell module of this invention. 本発明のＣＩＳ系薄膜太陽電池モジュールのリボンワイヤの接続方法により接続されたリボンワイヤとガラス基板上に設置された金属裏面電極層との接着力の測定結果を示す図である。It is a figure which shows the measurement result of the adhesive force of the ribbon wire connected by the connection method of the ribbon wire of the CIS type thin film solar cell module of this invention, and the metal back surface electrode layer installed on the glass substrate. 本発明のＣＩＳ系薄膜太陽電池モジュールのリボンワイヤの接続方法により接続されたリボンワイヤとガラス基板との接着力の測定結果を示す図である。It is a figure which shows the measurement result of the adhesive force of the ribbon wire connected by the connection method of the ribbon wire of the CIS type thin film solar cell module of this invention, and a glass substrate. 従来のＣＩＳ系薄膜太陽電池モジュールのリボンワイヤの接続方法を示す概略図（側面図：図１（ａ）の矢印Ｂ方向から見た図）である。It is the schematic (side view: the figure seen from the arrow B direction of Fig.1 (a)) which shows the connection method of the ribbon wire of the conventional CIS type thin film solar cell module.

符号の説明Explanation of symbols

１ ＣＩＳ系薄膜太陽電池モジュール
１’ ＣＩＳ系薄膜太陽電池デバイス
１Ａ ガラス基板
１Ｂ アルカリバリア層
１Ｃ 金属裏面電極層
１Ｄ ｐ型ＣＩＳ系光吸収層
１Ｅ ｎ型高抵抗バッファ層
１Ｆ ｎ型透明導電膜窓層
２ リボンワイヤ（Ｓｎメッキ銅箔）
２Ａ 銅箔
２Ｂ Ｓｎメッキ層
３ 予備ハンダ（Ｉｎ又はＩｎ−Ａｇ合金）
４ 超音波ハンダコテ DESCRIPTION OF SYMBOLS 1 CIS type thin film solar cell module 1 'CIS type thin film solar cell device 1A Glass substrate 1B Alkali barrier layer 1C Metal back electrode layer 1D p-type CIS type light absorption layer 1E n-type high resistance buffer layer 1F n-type transparent conductive film window layer 2 Ribbon wire (Sn plated copper foil)
2A Copper foil 2B Sn plating layer 3 Preliminary solder (In or In-Ag alloy)
4 Ultrasonic soldering iron

Claims (4)

ガラス基板上に、金属裏面電極層、ｐ型ＣＩＳ系光吸収層、ｎ型高抵抗バッファ層、ｎ型透明導電膜からなる窓層の順に積層されたＣＩＳ系薄膜太陽電池デバイスを複数個、特定の電圧となるようにパターニングにより電気的に直列に接続したＣＩＳ系薄膜太陽電池モジュールの出力電極である金属裏面電極層にリボンワイヤを接続するＣＩＳ系薄膜太陽電池モジュールのリボンワイヤの接続方法であって、前記ガラス基板端部上の極薄の金属裏面電極層からなる出力電極に金属導体箔にＳｎメッキしたリボンワイヤを接続する際、前記出力電極上面にＰｂ以外の融点の低いハンダを、予め、予備ハンダした後、前記出力電極に、前記リボンワイヤを載せ、リボンワイヤの上に超音波ハンダコテを当て、超音波ハンダコテにより前記予備ハンダを溶融させて前記出力電極に前記リボンワイヤをハンダ付けし、前記予備ハンダの材質は、Ｉｎ又はＩｎとＡｇの合金からなることを特徴とするＣＩＳ系薄膜太陽電池モジュールのリボンワイヤの接続方法。 On a glass substrate, a metal back electrode layer, p-type CIS light absorbing layer, n-type high-resistance buffer layer, a plurality of CIS based thin-film solar cell device are laminated in this order on the window layer made of n-type transparent conductive film, the specific This is a method of connecting a ribbon wire of a CIS-based thin-film solar cell module, in which a ribbon wire is connected to a metal back electrode layer that is an output electrode of a CIS-based thin-film solar cell module electrically connected in series by patterning so that a voltage of When a ribbon wire plated with Sn on a metal conductor foil is connected to an output electrode composed of an extremely thin metal back electrode layer on the glass substrate end, solder having a low melting point other than Pb is previously applied to the upper surface of the output electrode. After the preliminary soldering, the ribbon wire is placed on the output electrode, an ultrasonic soldering iron is applied on the ribbon wire, and the preliminary soldering is performed by the ultrasonic soldering iron. The soldered the ribbon wire to the output electrode is melted, the material of the preliminary solder, In or In and ribbon wire connection method of Ag CIS based thin-film solar cell module that characterized by comprising an alloy of . 前記予備ハンダは、前記出力電極のハンダ付けする位置及びそれを取り囲む領域にハンダ付けすることを特徴とする請求項１に記載の方法。 The preliminary solder A method according to claim 1, characterized in that the soldered area surrounding the position 及 Bisore of soldering of the output electrode. 前記超音波ハンダコテの周波数は、４０〜８０ｋＨｚで、超音波ハンダコテのコテ先温度は、３５０〜４５０℃であることを特徴とする請求項１又は２に記載の方法。 The frequency of the ultrasonic soldering iron is a 40～80KHz, tip temperature of the ultrasonic soldering iron The method of claim 1 or 2, characterized in that it is 350 to 450 ° C.. 前記超音波ハンダコテによるハンダ付けは、ハンダ付け対象部の寸法が長い場合、スポット状に一定間隔、５ｃｍ〜２５ｃｍ間隔で分散して複数箇所ハンダ付けを行うことを特徴とする請求項１、２又は３に記載の方法。 The soldering that by the ultrasonic soldering iron, when the dimensions of the soldering target portion is long, claim 1, characterized in that a plurality of locations soldering distributed at regular intervals, 5Cm～25cm intervals in a spot shape, The method according to 2 or 3.
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