JP5006354B2 - 圧電/電歪共振子 - Google Patents
圧電/電歪共振子 Download PDFInfo
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- JP5006354B2 JP5006354B2 JP2009018424A JP2009018424A JP5006354B2 JP 5006354 B2 JP5006354 B2 JP 5006354B2 JP 2009018424 A JP2009018424 A JP 2009018424A JP 2009018424 A JP2009018424 A JP 2009018424A JP 5006354 B2 JP5006354 B2 JP 5006354B2
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- Prior art keywords
- piezoelectric
- electrostrictive
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- electrode layer
- lower electrode
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- 239000000758 substrate Substances 0.000 claims description 38
- 238000010304 firing Methods 0.000 claims description 19
- 239000010410 layer Substances 0.000 description 158
- 238000000034 method Methods 0.000 description 39
- 239000000463 material Substances 0.000 description 26
- 230000008569 process Effects 0.000 description 12
- 230000008859 change Effects 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 239000012530 fluid Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 238000007650 screen-printing Methods 0.000 description 8
- 239000011247 coating layer Substances 0.000 description 7
- 239000011734 sodium Substances 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- 230000010287 polarization Effects 0.000 description 5
- 239000006104 solid solution Substances 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 229910001928 zirconium oxide Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000007598 dipping method Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000000443 aerosol Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- FSAJRXGMUISOIW-UHFFFAOYSA-N bismuth sodium Chemical compound [Na].[Bi] FSAJRXGMUISOIW-UHFFFAOYSA-N 0.000 description 2
- 229910002115 bismuth titanate Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- UKDIAJWKFXFVFG-UHFFFAOYSA-N potassium;oxido(dioxo)niobium Chemical compound [K+].[O-][Nb](=O)=O UKDIAJWKFXFVFG-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- KWVFUTDPKIKVQW-UHFFFAOYSA-N [Sr].[Na] Chemical compound [Sr].[Na] KWVFUTDPKIKVQW-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- LGRDPUAPARTXMG-UHFFFAOYSA-N bismuth nickel Chemical compound [Ni].[Bi] LGRDPUAPARTXMG-UHFFFAOYSA-N 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- QNDQILQPPKQROV-UHFFFAOYSA-N dizinc Chemical compound [Zn]=[Zn] QNDQILQPPKQROV-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002003 electrode paste Substances 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- HEPLMSKRHVKCAQ-UHFFFAOYSA-N lead nickel Chemical compound [Ni].[Pb] HEPLMSKRHVKCAQ-UHFFFAOYSA-N 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 150000003891 oxalate salts Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- ZBSCCQXBYNSKPV-UHFFFAOYSA-N oxolead;oxomagnesium;2,4,5-trioxa-1$l^{5},3$l^{5}-diniobabicyclo[1.1.1]pentane 1,3-dioxide Chemical compound [Mg]=O.[Pb]=O.[Pb]=O.[Pb]=O.O1[Nb]2(=O)O[Nb]1(=O)O2 ZBSCCQXBYNSKPV-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- UYLYBEXRJGPQSH-UHFFFAOYSA-N sodium;oxido(dioxo)niobium Chemical compound [Na+].[O-][Nb](=O)=O UYLYBEXRJGPQSH-UHFFFAOYSA-N 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229940071182 stannate Drugs 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/877—Conductive materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2047—Membrane type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
- Piezo-Electric Transducers For Audible Bands (AREA)
Description
11 基板
11a 振動板
11b 支持部
12 下部電極層
13 圧電/電歪層
14 上部電極層
Claims (2)
- 振動板及び支持部からなる基板、その基板の上に固着された下部電極層、その下部電極層の上に形成された圧電/電歪層、及びその圧電/電歪層の上に形成された上部電極層から構成され、
前記圧電/電歪層が焼成により下部電極層の上に形成され、前記圧電/電歪層が前記下部電極層と上部電極層との間で上下方向に分極処理され、
前記下部電極層と上部電極層との間に所定の駆動電圧が印加されることにより、前記圧電/電歪層が、上下方向に伸縮変形し、この伸縮変形により、前記支持部の間に掛け渡された前記振動板が撓むように一次の共振モードで変形駆動する圧電/電歪共振子であって、
前記基板に対する、前記下部電極層の被覆率が、98%以下である圧電/電歪共振子。 - 前記下部電極層の厚さが、5μm以下である請求項1に記載の圧電/電歪共振子。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009018424A JP5006354B2 (ja) | 2009-01-29 | 2009-01-29 | 圧電/電歪共振子 |
EP20100250106 EP2214221B1 (en) | 2009-01-29 | 2010-01-22 | Piezoelectric or electrostrictive element and manufacturing method of the same |
US12/693,710 US8476805B2 (en) | 2009-01-29 | 2010-01-26 | Piezoelectric/electrostrictive element having a specific coverage area of electrode on substrate, and manufacturing method of the same |
CN2010101047153A CN101794859B (zh) | 2009-01-29 | 2010-01-28 | 压电/电致伸缩元件及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009018424A JP5006354B2 (ja) | 2009-01-29 | 2009-01-29 | 圧電/電歪共振子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010177448A JP2010177448A (ja) | 2010-08-12 |
JP5006354B2 true JP5006354B2 (ja) | 2012-08-22 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009018424A Expired - Fee Related JP5006354B2 (ja) | 2009-01-29 | 2009-01-29 | 圧電/電歪共振子 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8476805B2 (ja) |
EP (1) | EP2214221B1 (ja) |
JP (1) | JP5006354B2 (ja) |
CN (1) | CN101794859B (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5998534B2 (ja) * | 2012-03-09 | 2016-09-28 | 株式会社リコー | 圧電膜構造、電機−機械変換素子、液滴吐出ヘッドおよび液滴吐出装置 |
CN102744483A (zh) * | 2012-07-20 | 2012-10-24 | 河南新能光伏有限公司 | 一种薄膜太阳电池汇流焊接工艺 |
DE102014211465A1 (de) * | 2013-08-07 | 2015-02-12 | Pi Ceramic Gmbh Keramische Technologien Und Bauelemente | Bleifreier piezokeramischer Werkstoff auf Bismut-Natrium-Titanat (BNT)-Basis |
AU2014368978A1 (en) | 2013-12-20 | 2016-07-28 | Lockheed Martin Corporation | Condensation inhibiting layer, method of forming the layer, and condensation inhibiting device |
CN103926691B (zh) * | 2014-03-22 | 2016-08-24 | 吉林大学 | 一种光开关阵列构成的兼具投影和摄像功能的光路装置 |
JP6299502B2 (ja) * | 2014-07-17 | 2018-03-28 | Tdk株式会社 | 圧電組成物および圧電素子 |
DE102016216064A1 (de) * | 2015-08-26 | 2017-03-02 | Ceramtec Gmbh | Schicht und Verfahren zu seiner Herstellung |
CN106019711B (zh) * | 2016-07-27 | 2019-03-05 | 京东方科技集团股份有限公司 | 背光模组、背光调整方法和显示装置 |
JP2019100791A (ja) * | 2017-11-30 | 2019-06-24 | セイコーエプソン株式会社 | 液面センサー及び液面検出方法 |
DE102023117143A1 (de) * | 2023-06-29 | 2025-01-02 | Vega Grieshaber Kg | Vibrationssensor |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05206534A (ja) * | 1992-01-29 | 1993-08-13 | Toyota Motor Corp | 積層型圧電素子 |
US5504388A (en) * | 1993-03-12 | 1996-04-02 | Ngk Insulators, Ltd. | Piezoelectric/electrostrictive element having electrode film(s) with specified surface roughness |
JP3162584B2 (ja) * | 1994-02-14 | 2001-05-08 | 日本碍子株式会社 | 圧電/電歪膜型素子及びその製造方法 |
DE19620826C2 (de) * | 1996-05-23 | 1998-07-09 | Siemens Ag | Piezoelektrischer Biegewandler sowie Verfahren zu dessen Herstellung |
JP3397753B2 (ja) * | 1999-09-30 | 2003-04-21 | ティーディーケイ株式会社 | 積層型圧電素子およびその製造方法 |
EP1152475A4 (en) * | 1999-11-11 | 2007-02-21 | Mitsubishi Electric Corp | PIEZOELECTRIC THIN FILM ELEMENT |
JP2001250994A (ja) * | 2000-03-03 | 2001-09-14 | Tdk Corp | 積層型圧電素子 |
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EP1282174B1 (de) * | 2001-07-27 | 2008-06-18 | Holmberg GmbH & Co. KG | Schwingungswandler mit piezoelektrischem Element |
US7067961B2 (en) * | 2002-07-12 | 2006-06-27 | Ngk Insulators, Ltd. | Piezoelectric/electrostrictive film device, and manufacturing method of the device |
JP4473529B2 (ja) * | 2002-07-12 | 2010-06-02 | 日本碍子株式会社 | 圧電/電歪膜型素子、及びその製造方法 |
US7176600B2 (en) * | 2003-12-18 | 2007-02-13 | Palo Alto Research Center Incorporated | Poling system for piezoelectric diaphragm structures |
JP2005340387A (ja) * | 2004-05-25 | 2005-12-08 | Tdk Corp | 積層型圧電素子及び燃料噴射装置 |
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JP4748978B2 (ja) | 2004-12-02 | 2011-08-17 | 日本碍子株式会社 | 圧電/電歪素子及びその製造方法 |
WO2006109501A1 (ja) | 2005-03-18 | 2006-10-19 | Ngk Insulators, Ltd. | 圧電素子の検査方法、検査装置及び分極処理方法 |
EP1909340B1 (en) * | 2005-06-29 | 2012-10-24 | NGK Insulators, Ltd. | Piezoelectric/electrostriction film type element |
WO2007123278A1 (ja) * | 2006-04-24 | 2007-11-01 | Ngk Insulators, Ltd. | 圧電/電歪膜型素子 |
CN101563795B (zh) * | 2006-10-20 | 2011-03-23 | 京瓷株式会社 | 压电致动器装置及其制造方法 |
US8196843B2 (en) * | 2007-03-27 | 2012-06-12 | Kyocera Corporation | Multi-layer piezoelectric element, injection apparatus using the same and method of multi-layer piezoelectric element |
CN101978520B (zh) * | 2008-01-23 | 2014-01-29 | 埃普科斯股份有限公司 | 压电多层部件 |
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2009
- 2009-01-29 JP JP2009018424A patent/JP5006354B2/ja not_active Expired - Fee Related
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2010
- 2010-01-22 EP EP20100250106 patent/EP2214221B1/en not_active Not-in-force
- 2010-01-26 US US12/693,710 patent/US8476805B2/en not_active Expired - Fee Related
- 2010-01-28 CN CN2010101047153A patent/CN101794859B/zh not_active Expired - Fee Related
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EP2214221A2 (en) | 2010-08-04 |
EP2214221A3 (en) | 2011-04-06 |
CN101794859B (zh) | 2012-07-25 |
US8476805B2 (en) | 2013-07-02 |
JP2010177448A (ja) | 2010-08-12 |
CN101794859A (zh) | 2010-08-04 |
EP2214221B1 (en) | 2013-05-15 |
US20100187953A1 (en) | 2010-07-29 |
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