JP4957023B2 - Electro-optical device and electronic apparatus - Google Patents

Description

  The present invention relates to a technical field of an electro-optical device such as a liquid crystal device and an electronic apparatus such as a liquid crystal projector including the electro-optical device.

  A liquid crystal device which is an example of this type of electro-optical device is frequently used not only as a direct-view display but also as a light modulation means (light valve) of, for example, a projection display device. In a liquid crystal device, improvement in resolution is required year by year. Especially when used as a light valve of a projection display device, since the image on the light valve is enlarged and displayed, the demand for higher resolution becomes more severe. Yes. On the other hand, in order to ensure a bright image, it is also required to ensure the aperture ratio of the pixels.

  In particular, in the case of a projection display device, strong light from a light source is incident on the liquid crystal light valve. This light blocks the incident light so that the TFT in the liquid crystal light valve does not cause an increase in leakage current or malfunction. On the other hand, a technique for suppressing light leakage in the aperture region of the pixel has been proposed in order to suppress a decrease in contrast. For example, Patent Document 1 discloses a technique for reducing light leakage of light having a polarization axis in a predetermined direction with respect to the edge of the light shielding film.

  In addition, this type of light shielding film is provided on the light incident side when viewed from a semiconductor element such as a TFT so as to shield not only the TFT portion but also the portion along the data line and the scanning line in an active matrix liquid crystal light valve. In general, it is formed in a lattice shape. In addition, the light shielding film may be shared as a wiring on the TFT array substrate on which a semiconductor element such as a TFT is formed by patterning a conductive material such as a metal into a predetermined shape.

JP 2005-234524 A

  However, when the light shielding film is shared as the wiring, the pattern shape of the wiring is limited according to the layout on the TFT array substrate, and the patterning accuracy of the light shielding film shared as the wiring is required for the patterning accuracy. There is a technical problem that has not been adequately followed. More specifically, for example, a capacitor wiring that supplies a fixed potential to a storage capacitor is viewed along a non-opening region that extends in a lattice between pixel opening regions from the viewpoint of reducing light leakage. It is comprised from the part extended in a mutually different direction. It is desirable that the corner corresponding to the edge of the intersecting brain where the portions extending in different directions intersect is ideally formed at a right angle when seen in a plan view. It is difficult to pattern the light-shielding film with sufficient patterning accuracy according to the film thickness, and the corners of the intersecting portions are formed in a curved shape that is oblique or slightly dull with respect to the portions extending in different directions. In the case where such a corner is formed, there is a case where light that is polarized through the corner escapes from the opening region of the pixel through the polarizing plate provided in the liquid crystal device. When such light leakage occurs, it is difficult to increase the contrast of the display image.

  Accordingly, the present invention has been made in view of the above-described problems. For example, an electro-optical device such as a light valve in which light leakage in a pixel is reduced, a projector including such an electro-optical device, and the like. It is an object to provide an electronic device.

In order to solve the above problems, an electro-optical device according to a first aspect of the present invention includes a pixel electrode provided in each of a plurality of pixels constituting a display region on a first substrate, and an electrical connection to the pixel electrode. A thin film transistor connected to the storage electrode, a storage capacitor in which one electrode is electrically connected to the pixel electrode and the other electrode is electrically connected to a capacitor wiring, and a first direction and a first direction intersecting each other in the display region A first light-shielding film that extends in each of two directions and is formed in a non-opening region that separates the opening region of each pixel from each other , and the capacitor wiring includes a first portion that extends along the first direction, and The second portion extending along the second direction, and the first portion in the non-opening region that overlaps the first light-shielding film corresponding to a crossing portion where the first portion and the second portion intersect each other. Part and second part That having a cutout portion formed by cutting out at least one.

  In the electro-optical device according to the first aspect of the present invention, the display area, which is a typical example of the image display area, includes a plurality of arrays arranged in a matrix along each of the first direction and the second direction of the display area. It consists of pixels.

  The first light shielding film is formed partially or continuously along each of the first direction and the second direction. Here, “partially” means that the first light-shielding film only needs to have a portion extending along each of the first direction and the second direction. It may be a plurality of light shielding films separated from each other in the non-opening regions that are separated. The first light-shielding film is shared with a scanning line formed on a first substrate such as a TFT array substrate, and is formed by patterning a conductive metal material such as AL into a predetermined shape.

  Here, the “opening region” is a region in the pixel through which light is substantially transmitted. For example, a region where a pixel electrode is formed, and the liquid crystal exits the liquid crystal according to the change in transmittance. This is an area in which the gradation of incident light can be changed. In other words, the opening region means a region where light condensed on the pixel is not blocked by the wiring, the light shielding film, the semiconductor element, or the like. “Non-opening region” means a region where light contributing to display is not transmitted, for example, a region where a non-transparent wiring or electrode is disposed in a pixel.

  The second light-shielding film extends in the first direction and the second direction so as to constitute at least a part of the wiring for driving the pixel electrode in accordance with the pattern shape required for the wiring. It has a second part. The second light shielding film is made of a conductive metal material such as AL, for example, and overlaps the first light shielding film in the non-opening region corresponding to the intersection where the first portion and the second portion intersect each other. The region has a cutout portion formed by cutting out at least one of the first portion and the second portion.

  Here, “corresponding to the intersecting portion” means that at each intersecting portion and in the vicinity of the intersecting portion, and the notch portions are the first portion and the second portion when the second light shielding film is patterned. The first portion and the first portion of the non-opening region that overlaps the first light-shielding film so that a part of the non-opening region is not defined by the corner portion that is formed so as to intersect with each other obliquely or with a curved shape. At least one of the two portions is cut out. More specifically, when a part of the non-opening region is defined by the corner that is the edge of the intersection, the light polarized in a predetermined direction with respect to the corner is not shielded by the second light shielding film, Omission occurs and contrast decreases.

  Therefore, in the present invention, in order to prevent such light leakage, the corner portion formed so as to intersect with the first portion and the second portion in advance obliquely or in a curved shape is the first of the non-opening regions. A notch is formed so as to be located in a region overlapping the light shielding film. More specifically, the corners, which are the edges of the notches, are slightly blunted according to the patterning accuracy of photolithography or the like (that is, obliquely or curved with respect to the first part and the second part). Even if it is formed as a shape having an intersection), the notch is formed so as to overlap the first light shielding film. In other words, the corners that cause light leakage are not formed in the portion of the second light shielding film that defines the non-opening region, so that the contrast is not lowered. That is, in the present invention, in order to reduce light leakage caused by patterning accuracy when patterning the second light shielding film, the pattern shape in the vicinity of the intersection of the second light shielding films is changed more specifically. Can reduce light leakage by providing a notch.

  As described above, according to the electro-optical device according to the first aspect of the present invention, light omission in the aperture region of the pixel can be reduced, and the contrast when displaying an image can be increased.

In order to solve the above-described problem, an electro-optical device according to a second aspect of the present invention includes a pixel electrode provided in each of a plurality of pixels constituting a display area on the first substrate, and the pixel electrode electrically A thin film transistor connected to the storage electrode, a storage capacitor in which one electrode is electrically connected to the pixel electrode and the other electrode is electrically connected to a capacitor wiring, and a second substrate disposed opposite to the first substrate extend s the first and second directions respectively intersecting one another in the region overlapping the display area on the substrate surface, and a third light shielding film formed on the non-opening region separating the opening area of each pixel to each other And the capacitor wiring corresponds to a first portion extending along the first direction, a second portion extending along the second direction, and an intersection where the first portion and the second portion intersect each other. The non-opening region In out area overlapping the third light shielding film that have a cutout portion formed by cutting out at least one of said first and second portions.

  According to the electro-optical device according to the second aspect of the present invention, similarly to the above-described electro-optical device according to the first aspect of the present invention, it is possible to reduce light leakage in the aperture region and increase the contrast. Become.

  In the present invention, the third light-shielding film is a so-called black matrix light-shielding film formed on a second substrate such as a counter substrate disposed opposite to the TFT array substrate, for example. By forming the cutout portion in the region overlapping the black matrix, light leakage in the opening region can be reduced, and the contrast can be increased.

  In one aspect of the electro-optical device according to the first and second aspects of the present invention, the notch may be formed corresponding to at least one of the four corners of the opening region.

  According to this aspect, the effect of reducing light leakage can be obtained accordingly. In order to further reduce light leakage, notches may be provided according to the intersections of the second light shielding films provided corresponding to two or more corners included in the four corners of the opening region.

  In this aspect, the notch portion may be provided so as to overlap with the flange portion provided at the one corner.

  According to this aspect, the light transmitted through the notch can be blocked by the flange. Such a collar is formed as a part of the first light shielding film, for example, and is formed so that the edge extends in a direction extending obliquely with respect to each of the first direction and the second direction.

  In another aspect of the electro-optical device according to the first and second aspects of the present invention, the planar shape of the notch portion opens in a direction along at least one of the first direction and the second direction. A rectangular shape having an opening may be used.

  According to this aspect, the notch can be formed using a general-purpose etching method.

  In this aspect, the notch may be formed corresponding to each of the four corners arranged along the polarization direction of transmitted light that passes through the opening region.

  According to this aspect, notch portions may be provided corresponding to the positions where light leakage is likely to occur, that is, the corners arranged along the polarization direction of the transmitted light that passes through the aperture region among the four corners. More specifically, for example, in a liquid crystal device which is an example of an electro-optical device, notches are provided corresponding to corners aligned along the rubbing direction of the alignment film that matches the polarization direction of the light transmitted through the aperture region. Thus, light omission can be effectively suppressed while reducing a portion where the pattern shape of the second light shielding film is changed.

  In another aspect of the electro-optical device according to the first and second aspects of the present invention, a thin film transistor provided for each pixel corresponding to the intersecting portion, and a storage capacitor formed on an upper layer side of the thin film transistor, And the wiring is formed in the non-opening region with an interlayer insulating film disposed on the storage capacitor as a base, and a fixed potential of the storage capacitor via a contact hole in which the interlayer insulating film is formed. Capacitor wiring electrically connected to the side electrode may be used.

  According to this aspect, since the second light shielding film is at least part of the capacitor wiring, a fixed potential can be supplied to the storage capacitor interposed between the thin film transistor and the pixel electrode. As a result, the potential holding characteristic of the pixel electrode is improved, and the display can have a high contrast.

  Here, the “contact hole” refers to a hole provided in the thickness direction of the interlayer insulating film in order to connect the conductive layers formed above and below the interlayer insulating film to each other. As a result of the layer being dropped into it, it is in contact with the lower conductive layer (that is, a so-called contact hole), or a conductive material is embedded inside, and one end is brought into contact with the upper conductive layer, and the other end In contact with the lower conductive layer (ie, when formed as a plug). In addition, according to such a contact hole, the capacitor wiring and the fixed potential side electrode of the storage capacitor can be electrically connected.

  In order to solve the above problems, an electronic apparatus according to the present invention includes the above-described electro-optical device of the present invention.

  According to the electronic apparatus according to the present invention, since the electro-optical device according to the present invention described above is provided, a projection display device, a mobile phone, an electronic notebook, a word processor, and a viewfinder type capable of high-quality display. Alternatively, various electronic devices such as a monitor direct-view video tape recorder, a workstation, a videophone, a POS terminal, and a touch panel can be realized. In addition, as an electronic apparatus according to the present invention, for example, an electrophoretic device such as electronic paper can be realized.

  Such an operation and other advantages of the present invention will become apparent from the embodiments described below.

  Hereinafter, embodiments of the electro-optical device according to the first and second inventions of the present invention and the electronic apparatus according to the present invention will be described with reference to the drawings.

(First embodiment)
(Overall configuration of electro-optical device)
First, an electro-optical device according to this embodiment will be described with reference to FIGS. 1 and 2. FIG. 1 is a plan view of the electro-optical device when the TFT array substrate is viewed from the counter substrate side together with the components formed thereon, and FIG. 2 is a cross-sectional view taken along line HH ′ of FIG. In this embodiment, as an example of an electro-optical device, a TFT active matrix driving type liquid crystal device with a built-in driving circuit is taken as an example.

  1 and 2, in the liquid crystal device 1, a TFT array substrate 10 and a counter substrate 20 are disposed to face each other. A liquid crystal layer 50 is sealed between the TFT array substrate 10 and the counter substrate 20, and the TFT array substrate 10 and the counter substrate 20 are positioned around an image display region 10a that is a display region in which a plurality of pixel portions are provided. They are bonded to each other by a sealing material 52 provided in the sealing area.

  The sealing material 52 is made of, for example, an ultraviolet curable resin, a thermosetting resin, or the like for bonding the two substrates, and is applied on the TFT array substrate 10 in the manufacturing process and then cured by ultraviolet irradiation, heating, or the like. It is. In the sealing material 52, a gap material such as glass fiber or glass beads for dispersing the distance (inter-substrate gap) between the TFT array substrate 10 and the counter substrate 20 to a predetermined value is dispersed. That is, the electro-optical device according to the present embodiment is suitable for a small and enlarged display for a projector light valve.

  A light-shielding frame light-shielding film 53 that defines the frame area of the image display area 10a is provided on the counter substrate 20 side in parallel with the inside of the seal area where the sealing material 52 is disposed. However, part or all of the frame light shielding film 53 may be provided as a built-in light shielding film on the TFT array substrate 10 side. There is a peripheral area located around the image display area 10a. In other words, particularly in the present embodiment, when viewed from the center of the TFT array substrate 10, the distance from the frame light shielding film 53 is defined as the peripheral region.

  A data line driving circuit 101 and an external circuit connection terminal 102 are provided along one side of the TFT array substrate 10 in a region located outside the sealing region in which the sealing material 52 is disposed in the peripheral region. The scanning line driving circuit 104 is provided along two sides adjacent to the one side so as to be covered with the frame light shielding film 53. Further, in order to connect the two scanning line driving circuits 104 provided on both sides of the image display region 10 a in this way, a plurality of the pixel lines are covered along the remaining side of the TFT array substrate 10 and covered with the frame light shielding film 53. Wiring 105 is provided.

  Vertical conductive members 106 functioning as vertical conductive terminals between the two substrates are disposed at the four corners of the counter substrate 20. On the other hand, the TFT array substrate 10 is provided with vertical conduction terminals in a region facing these corner portions. Thus, electrical conduction can be established between the TFT array substrate 10 and the counter substrate 20.

  In FIG. 2, on the TFT array substrate 10, an alignment film is formed on the pixel electrode 9a after the formation of TFTs as pixel switching elements, wiring lines such as scanning lines and data lines. On the other hand, on the counter substrate 20, in addition to the counter electrode 21, a lattice-shaped or striped light-shielding film 23 and an alignment film are formed on the uppermost layer portion. The liquid crystal layer 50 is made of, for example, a liquid crystal in which one or several types of nematic liquid crystals are mixed, and takes a predetermined alignment state between the pair of alignment films.

  The TFT array substrate 10 is, for example, a transparent substrate such as a quartz substrate or a glass substrate, or a semiconductor substrate such as a silicon substrate. The counter substrate 20 is also a transparent substrate like the TFT array substrate 10.

  The TFT array substrate 10 is provided with a pixel electrode 9a, and an alignment film on which a predetermined alignment process such as a rubbing process has been performed is provided above the pixel electrode 9a. For example, the pixel electrode 9a is made of a transparent conductive film such as an ITO (Indium Tin Oxide) film, and the alignment film is made of an organic film such as a polyimide film.

  A counter electrode 21 is provided on the entire surface of the counter substrate 20, and an alignment film 22 subjected to a predetermined alignment process such as a rubbing process is provided below the counter electrode 21. The counter electrode 21 is made of a transparent conductive film such as an ITO film. The alignment film 22 is made of an organic film such as a polyimide film.

  The counter substrate 20 is provided with a lattice-shaped or stripe-shaped light shielding film 23. By adopting such a configuration, together with the upper light shielding film provided as the upper capacitor electrode 300, it is more reliable to prevent the incident light from entering the channel region 1a ′ or its periphery from the TFT array substrate 10 side. Can be prevented.

  A liquid crystal layer 50 is formed between the TFT array substrate 10 and the counter substrate 20 that are configured as described above and are arranged so that the pixel electrode 9a and the counter electrode 21 face each other. The liquid crystal layer 50 takes a predetermined alignment state by the alignment film in a state where an electric field from the pixel electrode 9a is not applied.

  1 and 2, on the TFT array substrate 10, in addition to the drive circuits such as the data line drive circuit 101 and the scanning line drive circuit 104, the image signal on the image signal line is sampled to obtain data. A sampling circuit 7 for supplying the line is provided. Also, a precharge circuit for supplying a precharge signal of a predetermined voltage level to a plurality of data lines in advance of the image signal, an inspection circuit for inspecting the quality, defects, etc. of the electro-optical device during manufacture or at the time of shipment Etc. may be formed on the substrate.

(Electrical connection configuration of pixel part)
Next, the electrical connection configuration of the pixel portion of the liquid crystal device 1 will be described in detail with reference to FIG. FIG. 3 is an equivalent circuit of various elements, wirings, and the like in a plurality of pixels formed in a matrix that forms the image display area of the liquid crystal device 1.

  In FIG. 3, a pixel electrode 9 a and a TFT 30 are formed in each of a plurality of pixels formed in a matrix that forms an image display area of the liquid crystal device 1. The TFT 30 is electrically connected to the pixel electrode 9a, and performs switching control of the pixel electrode 9a when the liquid crystal device 1 operates. The data line 6a to which the image signal is supplied is electrically connected to the source of the TFT 30. The image signals S1, S2,..., Sn to be written to the data lines 6a may be supplied line-sequentially in this order, or may be supplied for each group to a plurality of adjacent data lines 6a. May be.

  The scanning line 3a is electrically connected to the gate of the TFT 30, and the liquid crystal device 1 sequentially applies the scanning signals G1, G2,..., Gm to the scanning line 11a in a pulse sequence in this order at a predetermined timing. It is comprised so that it may apply. The pixel electrode 9a is electrically connected to the drain of the TFT 30, and the image signal S1, S2,... Supplied from the data line 6a is closed by closing the switch of the TFT 30 serving as a switching element for a certain period. Sn is written at a predetermined timing. A predetermined level of image signals S1, S2,..., Sn written in the liquid crystal as an example of the electro-optical material via the pixel electrode 9a is held for a certain period with the counter electrode formed on the counter substrate. The

  The liquid crystal modulates light and enables gradation display by changing the orientation and order of the molecular assembly depending on the applied voltage level. In the normally white mode, the transmittance for incident light is reduced according to the voltage applied in units of each pixel, and in the normally black mode, the light is incident according to the voltage applied in units of each pixel. The transmittance for light is increased, and light having a contrast corresponding to an image signal is emitted from the electro-optical device as a whole. In order to prevent the image signal held here from leaking, a storage capacitor 70 is added in parallel with the liquid crystal capacitor formed between the pixel electrode 9a and the counter electrode. The storage capacitor 70 enhances the potential holding characteristic of the pixel electrode 9a by a fixed potential supplied via the capacitor wiring 400 which is an example of the “second light shielding film” according to the first invention of the present invention, and the contrast, flicker, etc. Display characteristics can be improved.

(Specific configuration of the pixel portion)
Next, a specific configuration of the pixel portion included in the liquid crystal device 1 that realizes the above-described operation will be described with reference to FIGS.

  4 to 6, the circuit element and the pixel electrode 9 a described above are formed on the TFT array substrate 10. The TFT array substrate 10 includes, for example, a glass substrate, a quartz substrate, an SOI substrate, a semiconductor substrate, and the like, and is disposed to face the counter substrate 20 made of, for example, a glass substrate or a quartz substrate. The circuit elements are provided to drive the pixel electrodes 9a. Here, the circuit elements are stacked in a range from directly above the TFT array substrate 10 to immediately below the pixel electrodes 9a, from the scanning line 11a to the fourth interlayer insulating film 44. Pointing (see FIG. 6). The pixel electrode 9a (indicated by the broken line 9a 'in FIG. 5) is arranged in each of the display areas arranged vertically and horizontally, and the data line 6a and the first invention of the present invention at the boundary. The scanning lines 11a as an example of the “first light shielding film” are formed so as to be arranged in a lattice pattern (see FIGS. 4 and 5). The opening area of the pixel in which the pixel portion 70 is formed has a substantially rectangular planar shape due to a light shielding film arranged in a grid such as the scanning line 11a and the capacitor wiring 400, which will be described in detail later.

  The patterned conductive film constituting each circuit element includes, in order from the bottom, a first layer including the scanning line 11a, a second layer including the gate electrode 3a, a third layer including the fixed potential side capacitor electrode of the storage capacitor 70, and data The fourth layer includes the line 6a and the like, and the fifth layer includes the capacitor wiring 400 and the like. Further, the base insulating film 12 is provided between the first layer and the second layer, the first interlayer insulating film 41 is provided between the second layer and the third layer, the second interlayer insulating film 42 is provided between the third layer and the fourth layer, and the fourth layer. A third interlayer insulating film 43 is provided between the layer and the fifth layer, and a fourth interlayer insulating film 44 is provided between the fifth layer and the pixel electrode 9a to prevent the above-described elements from being short-circuited. . Of these, the first to third layers are shown in FIG. 4 as lower layer portions, and the fourth layer, the fifth layer, and the pixel electrode 9a are shown in FIG. 5 as upper layer portions.

(Structure of the first layer-scanning line, etc.)
The first layer is composed of scanning lines 11a. The scanning line 11a is a diagram in which the main line portion extending along the X direction as an example of the “first direction” according to the first invention of the present invention shown in FIG. 4 and the data line 6a or the capacitor wiring 400 extend. 4 is patterned into a shape including a projecting portion extending in the Y direction which is an example of the “second direction” in the first invention of the present invention. Such a scanning line 11a is formed using a light-shielding conductive material such as AL, for example. The scanning line 11a is made of conductive polysilicon or a single metal containing at least one of refractory metals such as Ti, Cr, W, Ta, and Mo, an alloy, a metal silicide, a polysilicide, or a laminate thereof. It is also possible to form.

(Structure of the second layer-TFT etc.)
The second layer includes the TFT 30 and the relay electrode 719. The TFT 30 has an LDD (Lightly Doped Drain) structure, for example, and includes a gate electrode 3a, a semiconductor layer 1a, and an insulating film 2 including a gate insulating film that insulates the gate electrode 3a from the semiconductor layer 1a. The gate electrode 3a is made of, for example, conductive polysilicon. The semiconductor layer 1a is made of, for example, polysilicon, and includes a channel region 1a ′, a low concentration source region 1b and a low concentration drain region 1c, and a high concentration source region 1d and a high concentration drain region 1e. The TFT 30 preferably has an LDD structure. However, the TFT 30 may have an offset structure in which no impurity is implanted into the low concentration source region 1b and the low concentration drain region 1c. It may be a self-aligned type in which a high concentration source region and a high concentration drain region are formed by implanting the film. The relay electrode 719 is formed as the same film as the gate electrode 3a, for example.

  The gate electrode 3 a of the TFT 30 is electrically connected to the scanning line 11 a through a contact hole 12 cv formed in the base insulating film 12. The base insulating film 12 is made of, for example, a silicon oxide film, and is formed on the entire surface of the TFT array substrate 10 in addition to the interlayer insulating function between the first layer and the second layer. Has a function of preventing changes in the element characteristics of the TFT 30 caused by the above.

(3rd layer configuration-storage capacity, etc.)
The third layer is composed of a storage capacitor 70. The storage capacitor 70 has a configuration in which a capacitor electrode 300 and a lower electrode 71 are arranged to face each other with a dielectric layer interposed therebetween. Among these, the capacitor electrode 300 is electrically connected to the capacitor wiring 400. The lower electrode 71 is electrically connected to each of the high concentration drain region 1e of the TFT 30 and the pixel electrode 9a.

  The lower electrode 71 and the high concentration drain region 1e are connected through a contact hole 83 opened in the first interlayer insulating film 41. Further, the lower electrode 71 and the pixel electrode 9 a are relayed through contact layers 881, 882, 804, the relay electrode 719, the second relay electrode 6 a 2, and the third relay electrode 402, and are electrically connected in the contact hole 89. Has been.

  For example, conductive polysilicon is used for the capacitor electrode 300 and the lower electrode 71, and silicon oxide is used for the dielectric layer. The first interlayer insulating film 41 is made of, for example, NSG (non-silicate glass). In addition, for the first interlayer insulating film 41, silicate glass such as PSG (phosphorus silicate glass), BSG (boron silicate glass), BPSG (boron phosphorus silicate glass), silicon nitride, silicon oxide, or the like can be used.

  As can be seen from the plan view of FIG. 4, the storage capacitor 70 in this case does not reach the display region substantially corresponding to the formation region of the pixel electrode 9a (ie, fits in the non-opening region in the light shielding region). The pixel aperture ratio is maintained relatively large.

(Fourth layer configuration-data lines, etc.)
The fourth layer is composed of data lines 6a. The data line 6a is formed as a three-layer film of aluminum, titanium nitride, and silicon nitride in order from the bottom. The silicon nitride layer is patterned to a slightly larger size so as to cover the lower aluminum layer and titanium nitride layer. In the fourth layer, the capacitor wiring relay layer 6a1 and the second relay electrode 6a2 are formed as the same film as the data line 6a. These are formed so as to be divided as shown in FIG.

  The data line 6 a is electrically connected to the high concentration source region 1 d of the TFT 30 through a contact hole 81 that penetrates the first interlayer insulating film 41 and the second interlayer insulating film 42.

  The capacitor wiring relay layer 6a1 is electrically connected to the capacitor electrode 300 through a contact hole 801 formed in the second interlayer insulating film 42, and relays between the capacitor electrode 300 and the capacitor wiring 400. . As described above, the capacitor wiring relay layer 6 a 2 is electrically connected to the relay electrode 719 through the contact hole 882 that penetrates the first interlayer insulating film 41 and the second interlayer insulating film 42. Such an interlayer insulating film 42 can be formed of, for example, silicate glass such as NSG, PSG, BSG, or BPSG, silicon nitride, silicon oxide, or the like.

(Fifth layer configuration-capacitive wiring, etc.)
The fifth layer is composed of the capacitor wiring 400 and the third relay electrode 402. The capacitor wiring 400 is extended to the periphery of the image display region 10a on the TFT array substrate 10 and is electrically connected to a constant potential source to be a fixed potential. As shown in FIG. 5, the capacitor wiring 400 is formed in a lattice shape extending in the X direction and the Y direction, and in order to secure a formation region of the third relay electrode 402 in a portion extending in the X direction. A notch is formed.

  The capacitance wiring 400 is in the vicinity of the intersection where the first portion 400X extending in the X direction and the second portion 400Y extending in the Y direction intersect, that is, the opening region of the pixel functioning as a light shielding film. It has the notch part 40 provided in the position corresponding to four corners. In the region where the cutout portion 40 is provided, the scanning line 11a constituting a part of the circuit element formed on the lower layer side of the capacitor wiring 400 shields light so as not to cause light leakage on the image display surface side. The notch 40 will be described in detail later with reference to FIG.

  The capacitor wiring 400 is formed wider than the structure of these circuit elements so as to cover the data lines 6a, the scanning lines 11a, the TFTs 30 and the like in the lower layer. Thereby, each circuit element is shielded from light, and adverse effects such as reflection of incident light and blurring of pixel outlines in a projected image are prevented.

  The capacitor wiring 400 is electrically connected to the capacitor wiring relay layer 6a1 through the contact hole 803 opened in the third interlayer insulating film 43. Therefore, the capacitor wiring 400 is electrically connected to the capacitor electrode 300 that is the fixed potential side electrode of the storage capacitor 70.

  In the fourth layer, the third relay electrode 402 is formed as the same film as the capacitor wiring 400. As described above, the third relay electrode 402 relays between the second relay electrode 6a2 and the pixel electrode 9a via the contact hole 804 and the contact hole 89. The capacitor wiring 400 and the third relay electrode 402 have a two-layer structure in which, for example, aluminum and titanium nitride are stacked.

  A fourth interlayer insulating film 44 is formed on the entire surface of the fourth layer. In the fourth interlayer insulating film 44, a contact hole 89 for electrically connecting the pixel electrode 9a and the third relay electrode 402 is opened.

(Pixel electrode)
The surface of the fourth interlayer insulating film 44 is planarized by, for example, CMP processing, and the pixel electrode 9a is disposed on each display region (FIG. 5). The pixel electrode 9a is made of a transparent conductive material such as ITO (Indium Tin Oxide). The pixel electrode 9 a is covered with the alignment film 16.

(Configuration on the counter substrate)
On the other hand, the counter substrate 20 is provided with a counter electrode 21 on the entire surface of the counter substrate, and further, an alignment film 22 is provided thereon (under the counter electrode 21 in FIG. 6). As with the pixel electrode 9a, the counter electrode 21 is made of a transparent conductive film such as an ITO film. A light-shielding film 23 is provided between the counter substrate 20 and the counter electrode 21 so as to cover at least a region facing the TFT 30 in order to prevent generation of light leakage current in the TFT 30.

  A liquid crystal layer 50 is provided between the TFT array substrate 10 and the counter substrate 20 configured as described above. The liquid crystal layer 50 is formed by sealing liquid crystal in a space formed by sealing the peripheral portions of the substrates 10 and 20 with a sealing material. The liquid crystal layer 50 takes a predetermined alignment state by the alignment film 16 and the alignment film 22 that have been subjected to an alignment process such as a rubbing process in a state where an electric field is not applied between the pixel electrode 9 a and the counter electrode 21. It is like that.

(Structure of the notch)
Next, the notch 40 formed in the capacitor wiring 400 will be described in detail with reference to FIGS. FIG. 7 is a plan view showing a part of the components of the liquid crystal device 1 extracted, and FIG. 8 is an enlarged view showing a region C1 of FIG. FIG. 9 is an enlarged view showing a region C2 in FIG. 8 in an enlarged manner. In FIG. 7, the scanning lines 11 a, the capacitor wirings 400, and the data lines 6 a formed in different layers on the TFT array substrate 10 are shown in an overlapping manner for easy explanation.

  In FIG. 7, the notch 40 is formed in a region corresponding to the four corners of the opening region, which is in the vicinity of the corner of the intersecting portion where the first portion 400X and the second portion 400Y constituting the capacitor wiring 400 intersect. . More specifically, the notch 40 partially cuts the first portion 400X along the Y direction in the drawing so as to overlap the flange 11A of the scanning line 11a in the region corresponding to the four corners of the opening region. It has a lacking planar shape. Therefore, in the region C1 that is a region in the vicinity of the intersection where the first portion 400X and the second portion 400Y intersect, the flange portion 11A is located on the opening region side from the notch 40, and the entire notch 40 is , It is located inside the scanning line 11a in plan view. That is, the flange portion 11A partially constitutes the boundary between the non-opening region and the opening region.

  Here, when the corner portion of the intersection 400C where the first portion 400X and the second portion 400Y intersect is located on the opening region side from the flange portion 11A, the corner of the intersection portion 400C instead of the flange portion 11A. The portion functions as a part of the light shielding film.

  However, when patterning the capacitor wiring 400, if the resolution of photolithography, that is, the resolution of the stepper does not have sufficient accuracy, the first portion 400X and the second portion 400Y are slanted or curved. As a result, a light beam polarized in a predetermined direction according to the inclination of the corner portion is not blocked by the corner portion, and light leakage occurs in the pixel. . In particular, in the present embodiment, as shown in FIG. 5, by extending the first portion 400X from the second portion 400Y along the X direction, the fixed potential side electrode and the capacitor wiring 400 of the storage capacitor 70 are electrically connected. There is a limitation in layout and circuit configuration that the capacitor wiring 400 must be electrically connected to the contact hole 803 for connection. Therefore, an intersection 400C where the first portion 400X and the second portion 400Y intersect is formed, and accordingly, a corner of the intersection 400C is formed.

  Therefore, in the present embodiment, since the entire cutout portion 40 overlaps the flange portion 11A of the scanning line 11a, the corner portion of the cutout portion 40 is configured by an edge perpendicular to the X direction and the Y direction in the drawing. If not, more specifically, even if the corner has a planar shape with a slight dullness, the light that is not shielded by the notch 40 in the region C1 Light is shielded by the flange 11A. In other words, in this embodiment, even if the resolution of the stepper does not have sufficient accuracy to form the target pattern shape, a portion of the capacitor wiring 400 that also functions as a light shielding film is likely to cause light leakage. By forming the light-shielding film so as to overlap with another light-shielding film, light leakage can be reduced.

  Therefore, according to the cutout portion 40 that overlaps the scanning line 11a, light leakage in the opening region can be reduced, and the contrast when the liquid crystal device 1 displays an image or the like can be increased. In the present embodiment, the notches 40 are formed so as to correspond to the four corners of the intersection 400C where the first portion 400X and the second portion 400Y intersect, in other words, the regions corresponding to the four corners of the opening region. Although four are provided, if at least one of the four cutouts 40 is provided, the effect of reducing light leakage can be obtained accordingly.

  Next, the shape and size of the notch 40 will be described with reference to FIG. In addition, the specific dimensions given below are those in the sample in which the inventor has confirmed the effect of light leakage, and the size of the “notch” according to the present invention is limited to the size given in the present embodiment. Note that it is not done.

  In FIG. 8, the cutout portion 40 has a rectangular planar shape in which the capacitor wiring 400 is partially cut out so as to open in the opening region, and the width W3 along the X direction in the drawing is: The width W2 along the Y direction is 0.75 μm. The interval between the cutout portions 40 facing each other along the Y direction, that is, the width W1 of the capacitor wiring 400 in the portion where the cutout portion 40 is provided is 1.0 μm. According to the capacitor wiring 400 and the notch 40 as described above, light leakage in the opening region can be reduced to a range in which the image quality is not hindered.

  Next, the planar shape of the corners of the cutout 40 will be described with reference to FIG.

  In FIG. 9, an edge part 400a is an edge part of the notch part 40 formed when the inventor patterned the capacitor wiring 400, and the resolution is insufficient when the ideal corner part is used as a reference. The width W5 of the edge portion 400a, which is an example of the scale, is 0.35 μm. When such a resolution is used, providing the notch 40 in the capacitor wiring 400 is an effective means for reducing light leakage. The edge portion 400b is an example of an edge portion when the patterning accuracy of the cutout portion 40 is increased, and the edge portion 400b is an example of a measure of insufficient resolution when an ideal corner portion is used as a reference. The width W5 is 0.25 μm. According to the resolution capable of forming the edge portion 400b, it is possible to reduce light leakage without providing the cutout portion 40 in the capacitor wiring 400. In addition, according to this embodiment, it has a special effect in that light leakage can be reduced in a state where the resolution when forming the capacitor wiring 400 is not sufficiently high.

(Modification)
Next, a modified example of the notch will be described with reference to FIGS. 10 to 12. Each of FIGS. 10 to 12 is a plan view showing a modification of the notch, and FIGS. 10 and 11 correspond to the region C1 shown in FIG. FIG. 12 is a plan view corresponding to FIG. In the following examples and embodiments, the same reference numerals are assigned to portions common to the liquid crystal device 1 described above, and detailed description thereof is omitted.

  In FIG. 10, the notch 40a has a planar shape in which both the first portion 400X and the second portion 400Y are partially notched in the vicinity of the intersecting portion 400C. The entire cutout portion 40a overlaps with the flange portion 11A of the scanning line 11a (not shown), and light that is not shielded by the cutout portion 40a is shielded by the flange portion 11A.

  In FIG. 11, the notch 40b has a planar shape in which both of the second portions 400Y are partially notched in the vicinity of the intersection 400C. The entire cutout portion 40b overlaps the flange portion 11A of the scanning line 11a (not shown), and light that is not shielded by the cutout portion 40b is shielded by the flange portion 11A.

  In FIG. 12, the notch 40c is arranged along the rubbing direction indicated by the arrow in the drawing, that is, the polarization direction of the light transmitted through the opening region, corresponding to each intersection 400C. Here, the capacitor wiring 400 has a flange 400B provided in a region where the notch 40c is not formed in the capacitor wiring 400 extending in the vicinity of the intersection 400C. According to the collar part 400B, even if the resolution of patterning is not sufficient and the collar part 400B is not configured with a right-angled edge, light leakage can be reduced. That is, if a notch is provided along the direction in which light can easily escape according to the polarization direction of light, the effect of reducing light leakage can be obtained accordingly.

  In addition, in this example, since the collar portion 400B can be provided in a portion where the notch portion is not provided, it is possible to effectively shield light from the semiconductor layer 1a of the TFT 30 located on the lower layer side of the capacitor wiring 400. it can. That is, the light entering the semiconductor layer 1a from obliquely above is reflected or absorbed by the collar portion, thereby suppressing the occurrence of light leakage current in the TFT 30 and displaying a high-quality image free from flicker or the like. It becomes possible.

(Second Embodiment)
Next, an embodiment of an electro-optical device according to the second invention of the present invention will be described with reference to FIG. In the present embodiment, the relative positional relationship between the capacitor wiring 400, the cutout portion 40a provided in the capacitor wiring 400, and the light shielding film 23 called a black matrix located on the upper layer side of the capacitor wiring 40. It has the characteristics.

  In FIG. 13, the liquid crystal device according to this embodiment includes a light shielding film 23 which is an example of a “third light shielding film” according to the second invention of the present invention. The light shielding film 23 is formed on the counter substrate 21 as in the first embodiment, and is formed in a lattice shape corresponding to the arrangement of each pixel.

  The cutout portion 40 a provided in the capacitor wiring 400 is formed so as to entirely overlap the light shielding film 23. Therefore, similarly to the first embodiment, in the region where the notch 40a is arranged on the TFT array substrate 10, the light shielding film 23 can shield light so as to reduce light leakage.

  Therefore, according to the present embodiment, light leakage in the opening region can be reduced as in the first embodiment, and the contrast can be increased when displaying an image. Needless to say, this embodiment can also be applied to modifications similar to the formation positions and shapes of the notches described in the first embodiment.

  As described above, according to the liquid crystal device according to each of the first and second embodiments, light leakage in the opening region of the pixel can be reduced without greatly changing the layout of the capacitor wiring 400. Therefore, contrast can be increased and display quality of an image displayed by the liquid crystal device can be improved.

(Electronics)
Next, a case where the liquid crystal device described in detail above is applied to an electronic device will be described.

  Here, a projector using the liquid crystal device as the electro-optical device as a light valve will be described. FIG. 14 is a plan view showing a configuration example of the projector. As shown in this figure, a lamp unit 1102 including a white light source such as a halogen lamp is provided inside the projector 1100. The projection light emitted from the lamp unit 1102 is separated into three primary colors of RGB by four mirrors 1106 and two dichroic mirrors 1108 arranged in the light guide, and liquid crystal as a light valve corresponding to each primary color. Incident to devices 100R, 100B, and 100G. The configurations of the liquid crystal devices 100R, 100B, and 100G are the same as those of the above-described liquid crystal device, and R, G, and B primary color signals supplied from the image signal processing circuit are modulated in each. Light modulated by these liquid crystal devices is incident on the dichroic prism 1112 from three directions. In the dichroic prism 1112, R and B light is refracted at 90 degrees, while G light goes straight. As a result, the images of the respective colors are combined, and a color image is projected onto the screen 1120 and the like via the projection lens 1114.

  In the above, a liquid crystal device has been described as a specific example of the electro-optical device of the present invention. However, the electro-optical device of the present invention also uses an electrophoretic device such as electronic paper or an electron-emitting device. It can be realized as a display device (Field Emission Display and Surface-Conduction Electron-Emitter Display). In addition to the projector described above, the electro-optical device of the present invention includes a television receiver, a viewfinder type or a monitor direct-view type video tape recorder, a car navigation device, a pager, and an electronic notebook. It can be applied to various electronic devices such as a calculator, a word processor, a workstation, a video phone, a POS terminal, and a device having a touch panel.

  The present invention is not limited to the above-described embodiment, and can be appropriately changed without departing from the spirit or idea of the invention that can be read from the claims and the entire specification, and an electro-optical device with such a change, In addition, an electronic apparatus including such an electro-optical device is also included in the technical scope of the present invention.

1 is a plan view illustrating a configuration of an electro-optical device according to a first embodiment. It is HH 'sectional drawing of FIG. 3 is an equivalent circuit of various elements and wirings in a plurality of pixels of the electro-optical device according to the first embodiment. FIG. 2 is a partial plan view (part 1) illustrating a specific configuration of the electro-optical device illustrated in FIG. 1. FIG. 3 is a partial plan view (part 2) illustrating a specific configuration of the electro-optical device illustrated in FIG. 1. It is AA 'sectional drawing of FIG.4 and FIG.5. FIG. 3 is a plan view showing a part of components of the electro-optical device according to the first embodiment. It is the enlarged view which expanded and showed the area | region C1 of FIG. It is the enlarged view which expanded and showed the area | region C2 of FIG. FIG. 6 is a plan view showing a modification of a notch in the electro-optical device according to the first embodiment (No. 1). FIG. 9 is a plan view showing a modification of the notch in the electro-optical device according to the first embodiment (No. 2). FIG. 10 is a plan view showing a modification of the notch in the electro-optical device according to the first embodiment (No. 3). FIG. 8 is a plan view corresponding to FIG. 7 in the electro-optical device according to the first embodiment. It is sectional drawing showing the structure of the liquid crystal projector which concerns on one Embodiment of the electronic device of this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Liquid crystal device, 10 ... TFT array substrate, 11a ... Scanning line, 23 ... Light shielding film, 40, 40a, 40b ... Notch part, 400 ... Capacitance wiring

Claims (7)

A pixel electrode provided in each of a plurality of pixels constituting a display region on the first substrate;
A thin film transistor electrically connected to the pixel electrode;
A storage capacitor in which one electrode is electrically connected to the pixel electrode and the other electrode is electrically connected to a capacitor wiring;
A first light-shielding film extending in each of a first direction and a second direction intersecting each other in the display region, and formed in a non-opening region that separates the opening region of each pixel from each other;
With
The capacitor wiring corresponds to a first portion extending along the first direction, a second portion extending along the second direction, and an intersection where the first portion and the second portion intersect each other. that having a cutout portion formed by cutting out at least one of said first and second portions in a region overlapping the first light-shielding film of the non-opening region
Electro-optical device comprising a call. A pixel electrode provided in each of a plurality of pixels constituting a display region on the first substrate;
A thin film transistor electrically connected to the pixel electrode;
A storage capacitor in which one electrode is electrically connected to the pixel electrode and the other electrode is electrically connected to a capacitor wiring;
A region of the substrate surface of the second substrate disposed opposite to the first substrate extends in each of the first direction and the second direction intersecting each other, and the non-opening region for each pixel is separated from each other. A third light-shielding film formed in the opening region;
With
The capacitor wiring corresponds to a first portion extending along the first direction, a second portion extending along the second direction, and an intersection where the first portion and the second portion intersect each other. that having a cutout portion formed by cutting out at least one of said first and second portions in a region overlapping the third light-blocking film of the non-opening region
Electro-optical device comprising a call. The electro-optical device according to claim 1, wherein the notch is formed to correspond to at least one of the four corners of the opening region. The electro-optical device according to claim 3, wherein the notch portion is provided so as to overlap a flange portion provided at the one corner. The planar shape of the notch is a rectangular shape having an opening that opens in a direction along at least one of the first direction and the second direction. The electro-optical device according to claim 1. The cutout portion is formed corresponding to each of the four corners arranged along the polarization direction of transmitted light that passes through the opening region. The electro-optical device according to Item. An electronic apparatus comprising the electro-optical device according to any one of claims 1 to 6 .

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