JP4929144B2 - Substrate processing apparatus, substrate processing method, and storage medium - Google Patents

Description

  The present invention relates to a substrate processing apparatus that performs a predetermined process such as a cleaning process on a substrate such as a semiconductor wafer, a substrate processing method, and a storage medium that stores a program for controlling the substrate processing apparatus.

  In a semiconductor device manufacturing process and a flat panel display (FPD) manufacturing process, a process of supplying a processing liquid to a semiconductor wafer or a glass substrate, which is a substrate to be processed, and performing liquid processing is frequently used. An example of such a process is a cleaning process that removes particles, contamination, and the like attached to the substrate.

  As such a substrate processing apparatus, one that holds a substrate such as a semiconductor wafer on a spin chuck and supplies a processing solution such as a processing solution to the wafer while the substrate is rotated to perform a cleaning process is known. . In this type of apparatus, the processing liquid is usually supplied to the center of the wafer, and by rotating the substrate, the processing liquid is spread outward to form a liquid film, and the processing liquid is released to the outside of the substrate.

  As a treatment liquid used for such a washing treatment, an alkaline treatment liquid in which ammonia, which is an alkali, is mixed with hydrogen peroxide and / or water, for example, an APM washing liquid or an SC-1 washing liquid is well known. ing. These alkaline treatment liquids are effective for removing particles adhering to the substrate, for example. A substrate processing apparatus that cleans a substrate using an alkaline processing liquid is described in Patent Document 1, for example.

Further, Patent Document 1 describes a cleaning process using an acidic processing liquid in addition to a cleaning process using an alkaline processing liquid.
JP-A-2005-79200

  The alkaline processing liquid is effective for removing particles from the substrate, for example. However, if the alkaline treatment liquid and the acidic treatment liquid are mixed, a neutralization reaction occurs, and thus a salt is generated. In the field of semiconductor integrated circuit devices and FPDs, for example, miniaturization of elements continues to advance rapidly. The amount of salt produced is very small, and even if there is no effect at present, there is a possibility that some effect will appear in the future.

  In addition, it has also been found that when an alkaline atmosphere remains when a substrate having a hydrophobic surface portion is dried using an organic solvent, new particles are generated on the substrate.

  The present invention stores a substrate processing apparatus, a substrate processing method, and a program for controlling the substrate processing apparatus that can suppress generation of salt and generation of new particles even when an alkaline processing liquid and an acidic processing liquid are used. The purpose is to provide a medium.

In order to solve the above-described problem, a substrate processing apparatus according to a first aspect of the present invention includes a substrate holder that holds a substrate and can rotate together with the substrate, and an alkali with respect to the substrate held by the substrate holder. A processing liquid supply comprising: a first processing liquid supply part that supplies a processing liquid containing a liquid; and a second processing liquid supply part that supplies a processing liquid containing an acid to the substrate held by the substrate holding part. A mechanism, a drain cup provided outside the substrate holding unit and capable of recovering the processing liquid supplied to the substrate, provided outside the drain cup, capable of storing a cleaning liquid, and containing the cleaning liquid An outer cup capable of overflowing with respect to the drain cup, and the drain cup is provided with an outer peripheral wall provided around the substrate holding portion, and the treatment liquid provided at a lower portion of the outer peripheral wall. Recovered, A storage tank that stores the cleaning liquid, the cleaning liquid supply section that supplies the cleaning liquid to the storage tank, and the outer cup is provided around the outer peripheral wall of the drain cup. A cleaning liquid drainage part for draining the cleaning liquid from the storage tank to a location different from the drain cup, wherein the cleaning liquid drainage part of the outer cup is lower than the upper end part of the outer peripheral wall of the drain cup The cleaning liquid supply part of the outer cup is at a position lower than the cleaning liquid drainage part of the outer cup .

The substrate processing method which concerns on the 2nd aspect of this invention is a substrate processing method using the substrate processing apparatus which concerns on the said 1st aspect, Comprising: The said alkali is included with respect to the board | substrate hold | maintained at the said board | substrate holding part. A first substrate processing step of supplying a processing liquid and processing the substrate; and a cleaning liquid stored in the outer cup is overflowed from the outer cup to the drain cup, thereby containing the alkali. A drain cup cleaning step for cleaning the drain cup from which the substrate has been collected; a second substrate processing step for supplying the processing liquid containing the acid to the substrate held by the substrate holding portion and processing the substrate; Are provided.

  A storage medium according to a third aspect of the present invention is a storage medium that operates on a computer and stores a program for controlling the substrate processing apparatus, and the program is related to the second aspect at the time of execution. The computer controls the substrate processing apparatus so that the substrate processing method is performed.

  According to the present invention, a substrate processing apparatus, a substrate processing method, and a program for controlling the substrate processing apparatus that can suppress generation of salt and generation of new particles even when an alkaline processing liquid and an acidic processing liquid are used are stored. Storage media can be provided.

  Embodiments of the present invention will be described below with reference to the drawings. In this description, the case where the present invention is applied to a liquid processing apparatus for cleaning the front and back surfaces of a semiconductor wafer (hereinafter simply referred to as a wafer) will be described.

(First embodiment)
(Substrate processing equipment)
FIG. 1 is a cross-sectional view schematically showing an example of a substrate processing apparatus according to the first embodiment of the present invention.

  As shown in FIG. 1, a substrate processing apparatus 100 a according to the first embodiment includes a substrate holding unit 1 that holds a wafer W, and a processing liquid supply that supplies a processing liquid to the wafer W held by the substrate holding unit 1. A mechanism 2 and a drain cup 3 provided from the outside to the bottom of the substrate holding unit 1 and capable of recovering the processing liquid supplied to the wafer W; provided on the outside of the drain cup 3; And an outer cup 4 capable of overflowing the cleaning liquid with respect to the drain cup 3.

  The substrate holding part 1 of the present example includes a horizontally-arranged rotating plate 1a and a cylindrical rotating shaft 1b connected to the center of the back surface of the rotating plate 1a and extending vertically downward. have. A circular hole 1c is formed at the center of the rotating plate 1a, and the hole 1c communicates with the hole 1d of the cylindrical rotating shaft 1b. In the hole 1c and the hole 1d, an elevating member 1f provided with a back surface side liquid supply nozzle 1e is provided so as to be movable up and down. A holding member 1g for holding the outer edge of the wafer W is provided on the rotating plate 1a. Although only one holding member 1g is shown in FIG. 1, for example, three holding members 1g are provided and arranged at equal intervals. The holding member 1g holds the wafer W horizontally with the wafer W floating from the rotating plate 1a.

The treatment liquid supply mechanism 2 of the present example includes a first treatment liquid supply unit 2a that supplies a treatment liquid containing an alkali and a second treatment liquid supply unit 2b that supplies a treatment liquid containing an acid. The processing liquid supply unit 2a includes a nozzle 2c that discharges a processing liquid containing alkali, and a two-fluid spray nozzle 2d that sprays cleaning liquid and gas. The two-fluid spray nozzle 2d may be provided as necessary. An example of the treatment liquid containing an alkali is a treatment liquid containing ammonia as an alkali. A more detailed example is an alkaline treatment liquid in which ammonia, which is an alkali, is mixed with hydrogen peroxide and / or water. For example, APM cleaning liquid, SC-1 cleaning liquid, or cleaning liquid similar to these cleaning liquids can be used. Further, the nozzle 2c discharges the rinse liquid by switching the valve. An example of the rinsing liquid is pure water (DIW). As the cleaning liquid sprayed by the two-fluid spray nozzle 2d, pure water (DIW) can be used. Similarly, the gas can include nitrogen gas or nitrogen-containing gas.

  The nozzles 2c and 2d are attached to the tip portion of the first scan arm 2e. The first scan arm 2e is connected to the shaft 2f. By rotating the shaft 2f, the nozzles 2c and 2d attached to the tip portion are moved to the standby position outside the substrate holding unit 1 and the substrate holding unit 1. It is possible to scan between the processing position above the wafer W held on the top. Further, the shaft 2f can be driven up and down in the vertical direction. For example, when the shaft 2f is moved up and down at the processing position, the position (height) at which the nozzles 2c and 2d discharge or spray can be adjusted.

  The second processing liquid supply unit 2b of this example includes a nozzle 2g that discharges a processing liquid containing an acid, a nozzle 2h that discharges a dry solvent, and a nozzle 2i that ejects a gas that dries the dry solvent. An example of the treatment liquid containing an acid is a treatment liquid containing hydrofluoric acid as an acid. A more detailed example is an acid treatment solution obtained by diluting hydrofluoric acid, which is an acid, with water or the like, for example, dilute hydrofluoric acid. Further, the nozzle 2g discharges the rinse liquid by switching the valve. An example of the rinsing liquid is pure water (DIW). An example of the dry solvent is an organic dry solvent. An example of the organic dry solvent is isopropanol (IPA). An example of a gas that dries the drying solvent is nitrogen.

  Similarly to the nozzles 2c and 2d, the nozzles 2g, 2h, and 2i are also attached to the tip of the scan arm, in this example, the second scan arm 2j. The second scan arm 2j in this example is at a lower position than the first scan arm 2e. The second scan arm 2j is connected to the shaft 2k, and by rotating the shaft 2k, the nozzles 2g, 2h, and 2i can be scanned between the standby position and the processing position. Further, the shaft 2k can also be driven up and down in the vertical direction. For example, the position (height) at which the nozzles 2g and 2h discharge at the processing position and the position (height) at which the nozzle 2i ejects can be adjusted.

  In addition to the rotating plate 1a, the substrate holding part 1 of this example includes a rotating cup 1h and a rotating guide 1i outside the rotating plate 1a. The rotating cup 1h and the rotating guide 1i of this example are provided along the circumferential direction of the rotating plate 1a. The rotating cup 1h and the rotating guide 1i are fixed to the rotating plate 1a by a fixing member 1j such as a screw, and rotate together with the rotating plate 1a. The rotating cup 1h has a shape having a cylindrical wall portion that surrounds the periphery of the rotating plate 1a, and an annular flange that covers the upper edge of the rotating plate 1a above the wall portion. The rotation guide 1i is disposed at a position substantially the same height as the wafer W between the annular flange of the rotation cup 1h and the outer edge of the rotation plate 1a. An annular gap is formed between the cylindrical wall portion of the rotating cup 1h and the rotating plate 1a. The processing liquid scattered by the rotation of the wafer W together with the rotary plate 1a and the rotary cup 1h is guided to the drain cup 3 provided from the outer side of the substrate holding part 1 to the lower side through the annular gap.

  The drain cup 3 of this example is provided on the outer side of the rotating cup 1h and has a cylindrical outer peripheral wall 3a provided in the vertical direction and an inner side wall 3b extending inward from the lower end of the outer peripheral wall 3a. The annular space defined by the outer peripheral wall 3a and the inner wall 3b is used as a liquid storage portion 3c that collects and stores the processing liquid. The liquid container 3c is connected to a drain pipe 3d that drains the collected processing liquid. A valve 3e is connected to the drainage pipe 3d. When the valve 3e is closed, the collected processing liquid is accumulated in the liquid storage portion 3c. When the valve 3e is opened, the collected processing liquid is guided to a drainage processing mechanism and a processing liquid recycling mechanism (not shown). An outer cup 4 is provided outside the drain cup 3.

  The outer cup 4 of this example is provided outside the outer peripheral wall 3 a of the drain cup 3 and has a cylindrical outer peripheral wall 4 a provided in the vertical direction. An annular space defined by the outer peripheral wall 4a is used as a storage tank 4b for storing the cleaning liquid. The storage tank 4b drains the cleaning liquid from the supply pipe 4c that supplies the cleaning liquid to the storage tank 4b of this example, the first drain pipe 4d that drains the cleaning liquid from the upper part of the storage tank 4b, and the bottom of the storage tank 4b. It is connected to the second drainage pipe 4e. A valve 4f is connected to the supply pipe 4c, and the supply of the cleaning liquid to the storage tank 4b is controlled by opening and closing the valve 4f. An example of the cleaning liquid is pure water (DIW). A valve 4g is connected to the first drain pipe 4d, and a valve 4h is connected to the second drain pipe 4e.

  The outer cup 4 in this example is formed to extend below the substrate holding portion 1, and the drain cup 3 has a shape disposed inside the outer cup 4. The outer cup 4 of this example includes an inner wall 4 i formed on the rotating shaft 1 b side with respect to the inner wall 3 b of the drain cup 3. The bottom of the outer cup 4 has a drain hole provided at a position between the inner wall 4i and the inner wall 3b, and a drain pipe 4j is connected to the drain hole. Further, an exhaust hole is formed in a bottom portion of the outer cup 4 below the inner wall 3b, and an exhaust pipe 4k is connected to the exhaust hole.

  The outer cup 4 in this example is mounted on the base plate 5. Further, a casing 6 is provided on the outer peripheral wall 4 a of the outer cup 4 so as to cover the wafer W, the substrate holding unit 1, the processing liquid supply mechanism 2, the drain cup 3, and the outer cup 4. An airflow introduction portion 6 b for introducing an airflow from a fan filter unit (FFU) (not shown) through an introduction port 6 a provided on a side portion of the casing 6 is provided on the upper portion of the casing 6. The air flow introducing unit 6b supplies clean air to the wafer W held by the substrate holding unit 1 by downflow. The supplied clean air is exhausted through the exhaust pipe 4k.

  A substrate loading / unloading port 6 c is further formed on the side of the casing 6. The wafer W is carried into / out of the casing 6 via the substrate carry-in / out port 6c.

  The substrate processing apparatus 100 a of this example has a control unit 7. The control unit 7 controls the substrate processing apparatus 100a. The control unit 7 of this example includes a process controller 7a that is a computer, a user interface 7b connected to the process controller 7a, and a storage unit 7c that is also connected to the process controller 7a.

  The user interface 7b includes a keyboard on which an operator inputs commands for managing the substrate processing apparatus 100a, a display for visualizing and displaying the operating status of the substrate processing apparatus 100a, and the like.

  The storage unit 7c is a control program for realizing the processing executed by the substrate processing apparatus 100a by the control of the process controller 7a, or a program for causing the substrate processing apparatus 100a to execute processing according to the processing conditions, that is, Recipe is stored. The recipe is stored in a storage medium in the storage unit 7c. The storage medium is a computer-readable storage medium, and may be a hard disk or a semiconductor memory, or a portable medium such as a CD-ROM, a DVD, or a flash memory. Arbitrary recipes are read from the storage unit 7c in response to an instruction from the user interface 7b and executed by the process controller 7a, whereby the substrate processing by the substrate processing apparatus 100a is performed under the control of the process controller 7a. The recipe can be appropriately transmitted from another device via a dedicated line, for example.

  2 and 3 are enlarged cross-sectional views showing the vicinity of the outer cup 4 shown in FIG.

  With reference to FIG.2 and FIG.3, the substrate processing apparatus 100a which concerns on this example is further demonstrated.

  As shown in FIGS. 2 and 3, in this example, the drainage position 10 of the first drainage pipe 4 d with respect to the outer peripheral wall 4 a of the outer cup 4 is on the side opposite to the drain cup 3. Thereby, the outer cup 4 of this example can drain the cleaning liquid stored in the storage tank 4 b to a location different from the drain cup 3.

  Furthermore, the drainage position 10 of the first drainage pipe 4d is above the supply position 11 of the supply pipe 4c. Thus, by making the height of the drainage position 10 of the first drainage pipe 4d higher than the supply position 11 of the supply pipe 4c, for example, the following advantages can be obtained.

  For example, as shown in FIG. 2, while the cleaning liquid 12 is supplied to the storage tank 4b from the supply pipe 4c by opening the valve 4f, the cleaning liquid 12 is opened from the upper part of the storage tank 4b by opening the valve 4g. Drain through 4d. By doing so, the cleaning liquid 12 can be kept clean. In addition, the water level of the clean cleaning liquid 12 can be stored in the storage tank 4b while maintaining the level of the drainage position 10.

  Furthermore, the supply position 11 of the supply pipe 4c of this example is below the drainage position 10, and is at an intermediate position between the drainage position 10 and the bottom of the storage tank 4b on the outer peripheral wall 4a. According to such a configuration, for example, the cleaning liquid 12 can be supplied to the storage tank 4b so as to expand upward, downward, and laterally (circumferential direction of the storage tank 4b). If the cleaning liquid 12 is supplied from the middle position of the outer peripheral wall 4a to the storage tank 4b so as to expand upward, downward, or laterally, the cleaning liquid 12 stored in the storage tank 4b is difficult to stagnate. The advantage that can be obtained. If the cleaning liquid 12 becomes difficult to stagnate, the cleanliness of the stored cleaning liquid 12 can be further increased.

  Furthermore, in this example, the drainage position 10 of the first drainage pipe 4 d is below the position 13 of the upper end 3 f of the outer peripheral wall 3 a of the drain cup 3. Thus, the following advantages are acquired by making the height of the drainage position 10 lower than the upper end part 3f, for example.

  For example, as shown in FIG. 3, the valve 4g is closed while the valve 4f is opened and the cleaning liquid 12 is supplied from the supply pipe 4c to the storage tank 4b. By doing in this way, the water level of the washing | cleaning liquid 12 in the storage tank 4b can be raised to the height exceeding the location 10 of the 1st drainage pipe 4d. When the water level further rises and reaches the position 13 of the upper end 3f, the cleaning liquid 12 overflows toward the drain cup 3 through the upper end 3f. As the cleaning liquid 12 overflows toward the drain cup 3, the drain cup 3 can be cleaned from the upper end portion 3 f to the inside of the liquid storage portion 3 c along the inner wall surface of the outer peripheral wall 3 a.

  FIG. 4 is an enlarged cross-sectional view showing the vicinity of the drain cup 3 in an enlarged manner.

  As shown in FIG. 4, when the wafer W is rotated for processing, the processing liquid supplied onto the wafer W becomes mist and scatters toward the outside of the wafer W. Most of the mist flows into the gap between the rotary cup 1h and the rotary guide 1i and the gap between the rotary guide 1i and the rotary stage 1a along the air flow indicated by the arrow 14, and below the rotary stage 1a. It is drawn toward the provided exhaust pipe 4k.

  However, in the mist, the airflow indicated by the arrow 15 passes between the outer peripheral wall 3a of the drain cup 3 and the wall 17 of the rotary cup 1h via the upper part of the flange 16 of the rotary cup 1h. Some will flow into the gap. As a result of the air flow indicated by the arrow 15, mist may adhere to the upper end 3 f of the drain cup 3 and the outer peripheral wall 3 a of the drain cup 3 from the upper end 3 f to the liquid storage portion 3 c. Among the attached mists, for example, those attached to the inside of the liquid container 3c are supplied with a rinsing liquid, for example, pure water (DIW), from the nozzle 2c or the nozzle 2g, and are rotated between the wall 17 of the rotary cup 1h and the gap. It is possible to wash away pure water by accumulating in the liquid storage part 3c through a gap with the stage 1a. However, the mist 18 adhering to the upper part of the liquid storage part 3c cannot be washed away. For example, when the attached mist 18 is an alkaline mist by an alkaline processing liquid, the following situation occurs.

  If the treatment with the acidic treatment liquid is performed while the alkaline mist is attached to the drain cup 3, the alkaline mist may be changed to a salt. For example, a semiconductor integrated circuit in which miniaturization of elements continues to advance rapidly even though there is no influence at present because the generated salt is in a very small amount and is located away from the substrate. In the field of devices and FPDs, there may be some impact in the future.

  Further, if the alkaline mist remains attached to the drain cup 3, an alkaline atmosphere is drifted. If the wafer W that has become hydrophobic through the treatment with the acidic treatment solution is subjected to the treatment using the organic treatment solution, for example, the drying treatment using an organic drying solvent such as isopropanol (IPA). There is a possibility that new particles are generated on the wafer W.

  In this example, the cleaning liquid 12 stored in the storage tank 4b is used to overflow the cleaning liquid 12 with respect to the drain cup 3 for the above situation. By doing in this way, the mist 18 adhering to the upper part of the liquid storage part 3c can be washed away. In addition, in this example, the cleaning liquid 12 overflows through the upper end portion 3f of the drain cup 3, so that even the mist adhering to the upper end portion 3f can be washed away.

  Of course, for the mist adhering to the inside of the liquid storage part 3c, for example, as shown in FIG. 5, the valve 3e is closed, the overflowing cleaning liquid 12 is stored in the liquid storage part 3c of the drain cup 3, and the liquid storage It can wash away by making it overflow toward the drainage pipe 4j from the part 3c.

  According to the substrate processing apparatus 100a according to the first embodiment, since the cleaning liquid 12 can overflow from the storage tank 4b of the outer cup 4 to the drain cup 3, for example, the drain cup 3 is connected to the upper end 3f thereof. To the inside of the liquid container 3c along the inner wall surface of the outer peripheral wall 3a, and the drain cup 3 can be kept clean. Therefore, it is possible to obtain a substrate processing apparatus that can suppress generation of salt and generation of new particles.

  In this example, when it is desired to empty the storage tank 4b, the second exhaust connected to the bottom of the storage tank 4b by closing the valve 4f and stopping the supply of the cleaning liquid and opening the valve 4h as shown in FIG. The cleaning liquid may be drained from the liquid pipe 4e.

  Next, an example of a substrate processing method using the substrate processing apparatus 100a according to the first embodiment will be described.

(Substrate processing method)
FIG. 7 is a flowchart showing an example of a substrate processing method using the substrate processing apparatus 100a according to the first embodiment, and FIGS. 8 to 12 schematically show the state of the substrate processing apparatus 100a in main processes. It is sectional drawing. This example is an example in which a substrate treatment using a treatment solution containing an alkali, a substrate treatment using a treatment solution containing an acid, and a drying treatment using an organic dry solvent are sequentially performed.

  First, as shown in Step 1 in FIG. 7, a treatment liquid containing alkali is supplied to the substrate.

  In this example, as shown in FIG. 8, after the wafer W is held on the rotary stage 1a using the holding member 1g, the first processing liquid supply unit 2a is moved above the wafer W. Next, the rotary stage 1a is rotated to rotate the wafer W. Next, a treatment liquid 21 containing an alkali is supplied from the nozzle 2 c to the surface of the wafer W. A specific example of the treatment liquid 21 is a mixed liquid (SC-1) of ammonia and hydrogen peroxide. The temperature is about 70 ° C.

  In step 1, the storage tank 4b is filled with the cleaning liquid 12, for example. A specific example of the cleaning liquid 12 is pure water (DIW).

  Further, since the wafer W is rotating during step 1, the processing liquid 21 or the mist of the processing liquid 21 is scattered toward the outer cup 4. For this reason, when the storage tank 4b is filled with the cleaning liquid 12, the cleaning liquid 12 is continuously supplied from the supply pipe 4c so as to keep the cleaning liquid 12 clean, and the cleaning liquid 12 is discharged from the first drain pipe 4d. It is preferable to continue.

  When step 1 is completed, as shown in step 2 in FIG. 7, the cleaning liquid 12 is caused to overflow from the outer cup 4 to the drain cup 3.

  In this example, as shown in FIG. 9, the valve 4 g is closed, and the cleaning liquid 12 is transferred from the storage tank 4 b to the liquid storage portion 3 c along the inner wall surface of the outer peripheral wall 3 a of the drain cup 3 from the upper end portion 3 f of the drain cup 3. Overflow toward. Furthermore, in this example, the valve 3e is closed, for example, and the cleaning liquid 12 is caused to overflow from the liquid storage part 3c. Thereby, the mist adhering to the drain cup 3 can be washed away from the upper part of the liquid storage part 3c including the one attached to the inside of the liquid storage part 3c and further to the outside of the inner peripheral wall 3b.

  In parallel with step 2, as shown in step 3, a rinsing liquid is supplied to the substrate.

  In this example, as shown in FIG. 9, the rinse liquid 22 is supplied from the nozzle 2 c to the surface of the wafer W. A specific example of the rinse liquid 22 is pure water (DIW). The rinsing liquid 22 passes through the gap between the rotary cup 1h and the rotary guide 1i, the gap between the rotary guide 1i and the rotary stage 1a, and the gap between the rotary cup 1h and the rotary stage 1a. Washed away.

  When step 2 and step 3 are completed, as shown in step 4 in FIG. 7, a treatment liquid containing an acid is supplied to the substrate.

  In this example, as shown in FIG. 10, the first processing liquid supply unit 2 a is made to stand by in the standby unit, and the second processing liquid supply unit 2 b is moved above the wafer W. Next, the treatment liquid 23 containing acid is supplied from the nozzle 2 g to the surface of the rotating wafer W. A specific example of the treatment liquid 23 is dilute hydrofluoric acid (DHF) obtained by diluting hydrofluoric acid with water.

  In step 4, the storage tank 4b may be filled with the cleaning liquid 12. Since the wafer W is still rotating during the step 4, when the storage tank 4b is filled with the cleaning liquid 12, the cleaning liquid 12 is continuously supplied from the supply pipe 4c so as to keep the cleaning liquid 12 clean. It is preferable to continuously drain the cleaning liquid 12 from the drain pipe 4d.

  When step 4 is completed, as shown in step 5 in FIG. 7, a rinsing liquid is supplied to the substrate.

  In this example, as shown in FIG. 11, the rinse liquid 24 is supplied from the nozzle 2g to the surface of the wafer W. A specific example of the rinsing liquid 24 is pure water (DIW) as in Step 3.

  In step 5, the storage tank 4b may be filled with the cleaning liquid 12, or the cleaning liquid 12 is overflowed from the storage tank 4b to the drain cup 3, and the drain cup 3 is cleaned in the same manner as in step 2. Anyway.

  When step 5 is completed, as shown in step 6 in FIG. 7, an organic dry solvent is supplied to the substrate to dry the substrate.

  In this example, as shown in FIG. 12, the dry solvent 25 is supplied to the surface of the wafer W from the nozzle 2h. A specific example of the dry solvent 25 is isopropanol (IPA). Further, after or while supplying the dry solvent 25, a gas 26 for drying the dry solvent 25 is sprayed from the nozzle 2 i to the surface of the wafer W, and the second scan arm 2 j is moved to the center of the wafer W. To the outer periphery of the wafer W. Thereby, the surface of the wafer W is dried. An example of the gas 26 to be dried is nitrogen gas.

  The substrate drying process is not limited to drying using a drying solvent, but may be spin drying in which the wafer W is rotated to dry the wafer W.

  In step 6, the storage tank 4b may be filled with the cleaning liquid 12, or the cleaning liquid 12 may be overflowed from the storage tank 4b to the drain cup 3, or the cleaning liquid 12 is stored in the storage tank 4b. In the case where the drain cup 3 is caused to overflow, the overflow may be performed after step 6 ends.

  In addition, during the IPA drying in Step 6, when it is desired to further suppress the moisture in the casing 6, the cleaning liquid (pure water) 12 in the storage tank 4b may be discharged.

  According to the substrate processing method according to such an example, after the first substrate processing step using the processing solution containing alkali and before the second substrate processing step using the processing solution containing acid, Since the drain cup 3 is washed by overflowing the cleaning liquid 12 from the storage tank 4 b to the drain cup 3, salt formation due to alkaline mist adhering to the drain cup 3 can be suppressed.

  Furthermore, also when performing the board | substrate drying process using an organic type dry solvent, the alkaline mist adhering to the drain cup 3 can be washed away before a board | substrate drying process. For this reason, generation | occurrence | production of a new particle can also be suppressed.

  Thus, according to the substrate processing method which concerns on an example, even if it uses an alkaline processing liquid, the substrate processing method which can suppress the production | generation of a salt and generation | occurrence | production of a new particle can be obtained.

(Second Embodiment)
FIG. 13 is a cross-sectional view schematically showing an example of a substrate processing apparatus according to the second embodiment of the present invention. In FIG. 13, the same parts as those in FIG. 1 are denoted by the same reference numerals, and only different parts will be described.

  As shown in FIG. 13, the substrate processing apparatus 100b according to the second embodiment differs from the substrate processing apparatus 100a according to the first embodiment in the inside of the storage tank 4b of the outer cup 4 and the storage tank. It is to further comprise an elevating cup 8 that moves up and down between 4b and above. Other parts are substantially the same as those of the substrate processing apparatus 100a according to the first embodiment.

  The elevating cup 8 in this example is cylindrical, and surrounds the outer peripheral wall 3 a of the drain cup 3 along the outer peripheral wall 3 a of the drain cup 3. Thereby, the elevating cup 8 surrounds the periphery of the substrate support 1. The raising / lowering cup 8 of this example is arrange | positioned in the storage tank 4b, and the washing | cleaning liquid stored in the storage tank 4b is used for the washing | cleaning. Furthermore, the raising / lowering cup 8 of this example is raised / lowered by the raising / lowering mechanism 8a. The raising / lowering mechanism 8a should just be able to raise / lower the raising / lowering cup 8, and the position to which the raising / lowering mechanism 8a attaches is not limited. If an example of the attachment position of the raising / lowering mechanism 8a is given, it is from the outer side of the storage tank 4b to the inside of the storage tank 4b. An example of the lifting mechanism 8a is shown in FIGS. 14A and 14B.

  FIG. 14A is a cross-sectional view showing a state where the elevating mechanism 8a according to the example lowers the elevating cup 8, and FIG. 14B is a cross-sectional view showing a state where the elevating mechanism 8a according to the example raises the elevating cup 8.

  As shown in FIGS. 14A and 14B, the lifting mechanism 8a according to the example includes a mounting member 8b having an L-shaped cross section attached to the lifting cup 8 and a support projecting in the lateral direction of the lifting cup 8 of the mounting member 8b. A vertical arm 8d attached to the portion 8c and a drive unit 8e for moving the vertical arm 8d up and down in the height direction are provided.

  In this example, the drive unit 8e is provided on the outside lower side of the storage tank 4b of the outer cup 4, and the vertical arm 8d connected to the drive unit 8e extends from the outside lower side of the storage tank 4b into the storage tank 4b. Exist. At the time of lowering, as shown in FIG. 14A, the attachment member 8b and the vertical arm 8d are submerged in, for example, the cleaning liquid 12 stored in the storage tank 4b. An example of submerging is, for example, if the attachment member 8b and the vertical arm 8d are attached to the elevating cup 8 so that the attachment position of the attachment member 8b and the vertical arm 8d is lower than the drainage position 10 of the first drainage pipe 4d. good. Furthermore, in this example, in the storage tank 4b, the vertical arm 8d is surrounded by a stretchable waterproof cover, for example, a bellows type waterproof cover 8f, and the vertical arm 8d is protected from the cleaning liquid 12.

  When raising the raising / lowering cup 8, as shown to FIG. 14B, the vertical arm 8d is raised using the drive part 8e. Thereby, the raising / lowering cup 8 raises. When lowering, the drive unit 8e may lower the vertical arm 8d.

  In the lifting mechanism 8a according to the example, the mounting member 8b, the arm that moves the lifting cup 8 up and down, in this example, the vertical arm 8d can be accommodated in the storage tank 4b. It is possible to obtain the advantage that the vertical arm 8d can be cleaned with the elevating cup 8 together with the cleaning liquid 12 in the storage tank 4b. For this reason, even if mist adheres to the attachment member 8b and the vertical arm 8d, the mist attached to the elevating cup 8 can be washed away.

  The vertical arm 8d is a drive body that is driven up and down. When there is a possibility that the drive body is deteriorated by the cleaning liquid 12, the periphery of the vertical arm 8d may be surrounded by the waterproof cover 8f as in this example. In this example, since the waterproof cover 8f is attached between the bottom of the storage tank 4b and the lower part of the support portion 8c of the attachment member 8b, the waterproof cover 8f can also be cleaned using the cleaning liquid 12 in the storage tank 4b. Therefore, the mist adhering to the waterproof cover 8f can be washed away together with the mist adhering to the elevating cup 8.

  15A and 15B are enlarged sectional views showing the vicinity of the elevating cup 8 shown in FIG. 13 in an enlarged manner.

  Although it is a utilization method of the raising / lowering cup 8, it can utilize as a mist shielding board which shields mist by raising the raising / lowering cup 8. FIG.

  For example, as shown in FIG. 15A, for example, it is scattered during the treatment using the treatment liquid 21 containing alkali using the nozzle 2c, for example, a mixed liquid (SC-1) of ammonia and hydrogen peroxide. It is possible to protect the second treatment liquid supply unit 2b from the coming alkaline mist 30 and to prevent scattering inside the casing 6.

  The second processing liquid supply unit 2b of the present example includes a nozzle 2g that discharges a processing liquid containing an acid and a nozzle 2h that discharges a dry solvent. If alkaline mist 30 adheres to these nozzles 2g and 2h, salt will be produced | generated and a new particle will be produced | generated. Such a situation can be solved by raising the elevating cup 8 to shield the alkaline mist 30 from scattering toward the second processing liquid supply unit 2b.

  In order to enhance the shielding effect of mist, for example, as shown in FIG. 15A, the position of the upper end 8g of the elevating cup 8 is, for example, a nozzle 2g for discharging a treatment liquid containing acid and / or a dry solvent is discharged. What is necessary is just to raise so that height H1 may become higher than the position of the nozzle 2h to perform.

  Further, at the time of ascent, the cleaning liquid 12 is stored in the storage tank 4b, and the position of the lower end portion 8h of the elevating cup 8 is set to be lower by the height H2 than the position of the liquid surface 12a of the cleaning liquid 12. The lower end portion 8h may be submerged in the cleaning liquid 12. Thus, by allowing the lower end 8h to be submerged in the cleaning liquid 12, the mist scattering path via the lower end 8h can be blocked by water sealing.

  When the elevating cup 8 is used as a mist shielding plate, mist, for example, alkaline mist 30 adheres to the elevating cup 8. For this reason, the elevating cup 8 must be cleaned. In this example, the elevating cup 8 is moved up and down between the inside of the storage tank 4b of the outer cup 4 and the upper side of the storage tank 4b. Realized simple cleaning.

  That is, as shown in FIG. 15B, the raised elevating cup 8 is lowered into the storage tank 4b, and the elevating cup 8 can be cleaned simply by being immersed in the cleaning liquid 12 stored in the storage tank 4b. .

  In order to obtain the cleaning effect better, as shown in FIG. 15B, the cleaning liquid 12 is continuously supplied from the supply pipe 4c into the storage tank 4b, and the cleaning liquid 12 is stored in the storage tank via the first drain pipe 4d. It is good to continue draining from 4b. In this way, the dirty cleaning liquid 12 can be drained while supplying the clean cleaning liquid 12, so that the cleaning effect can be enhanced.

  Further, at the time of cleaning, as shown in FIG. 15B, the position of the upper end portion of the elevating cup 8 is lower than the position of the liquid level of the cleaning liquid 12 by H3 so that the entire elevating cup 8 is entirely in the cleaning liquid 12 It's even better to submerge them. By immersing the entire elevating cup 8 in the cleaning liquid 12, it is possible to wash away the mist adhering to the upper end of the elevating cup 8.

  According to the substrate processing apparatus 100b according to the second embodiment, the mist is directed toward the second processing liquid supply unit 2b including the nozzle 2g for discharging the processing liquid containing acid and the nozzle 2h for discharging the dry solvent. For example, scattering of alkaline mist can be suppressed. Therefore, similarly to the substrate processing apparatus 100a according to the first embodiment, it is possible to obtain a substrate processing apparatus that can suppress generation of salt and generation of new particles even when an alkaline processing liquid is used.

  Next, some examples of the substrate processing method using the substrate processing apparatus 100b according to the second embodiment will be described.

(Substrate processing method 1)
FIG. 16 is a flowchart showing a first example of a substrate processing method using the substrate processing apparatus 100b according to the second embodiment, and FIGS. 17 to 20 schematically show states of the substrate processing apparatus 100b in main processes. It is sectional drawing shown. This example is an example in which a substrate treatment using a treatment solution containing an alkali, a substrate treatment using a treatment solution containing an acid, and a drying treatment using an organic dry solvent are sequentially performed.

  As shown in step 11 in FIG. 16, the elevating cup 8 is raised.

  In this example, as shown in FIG. 17, after the wafer W is held on the rotary stage 1a using the holding member 1g, the first processing liquid supply unit 2a is moved above the wafer W. Next, the elevating cup 8 is raised using the elevating mechanism 8a (not shown in FIG. 16).

  In step 11, the storage tank 4 b is filled with the cleaning liquid 12, for example, and the lower end of the elevating cup 8 is submerged in the cleaning liquid 12. A specific example of the cleaning liquid 12 is pure water (DIW).

  When step 11 is completed, as shown in step 12 in FIG. 16, a processing liquid containing alkali is supplied to the substrate.

  In this example, as shown in FIG. 18, the rotary stage 1a is rotated to rotate the wafer W. Next, a treatment liquid 21 containing an alkali is supplied from the nozzle 2 c to the surface of the wafer W. A specific example of the treatment liquid 21 is a mixed liquid (SC-1) of ammonia and hydrogen peroxide. The temperature is about 70 ° C.

  Further, since the wafer W is rotating during the step 12, the processing liquid 21 or the mist of the processing liquid 21 is scattered toward the elevating cup 8. For this reason, the processing liquid 21 or the mist of the processing liquid 21 may fall into the storage tank 4b below the elevating cup 8. If it is desired to keep the cleaning liquid 12 in the storage tank 4b clean, it is preferable to continue supplying the cleaning liquid 12 from the supply pipe 4c and continue to drain the cleaning liquid 12 from the first drain pipe 4d.

  When step 12 is completed, as shown in step 13 in FIG. 16, the elevating cup 8 is lowered and the elevating cup 8 is immersed in the cleaning liquid 12.

  In this example, as shown in FIG. 19, the elevating cup 8 is submerged, for example, in the cleaning liquid 12 of the storage tank 4b. In the submerged state, the cleaning liquid 12 is continuously supplied from the supply pipe 4c, and the cleaning liquid 12 is continuously discharged from the first drain pipe 4d. In this way, the elevating cup 8 is washed.

  In parallel with step 13, as shown in step 14, a rinsing liquid is supplied to the substrate. The elevating cup 8 can be raised halfway through the rinsing process and lowered into the storage tank 4b from the middle of the rinsing process.

  In this example, as shown in FIG. 19, the rinsing liquid 22 is supplied from the nozzle 2 c to the surface of the wafer W. A specific example of the rinse liquid 22 is pure water (DIW).

  When step 12 is completed, as shown in step 15 in FIG. 16, the cleaning liquid 12 is caused to overflow from the outer cup 4 to the drain cup 3.

  In this example, as shown in FIG. 20, the valve 4 g is closed, and the cleaning liquid 12 is caused to overflow from the storage tank 4 b to the liquid storage part 3 c through the upper end part 3 f of the drain cup 3. At this time, the valve 3e is also closed, for example, and the cleaning liquid 12 is caused to overflow from the liquid container 3c. Thereby, the mist adhering to the drain cup 3 can be washed away including the one adhering to the upper part of the liquid storage part 3c.

  In parallel with step 15, the substrate rinsing process shown in step 14 is performed.

  After step 15, steps 4 to 6 described with reference to FIG. 7 may be performed. The steps shown in steps 4 to 6 are as described above. The description is omitted.

  According to such a substrate processing method, the mist is prevented from being scattered around the substrate holding unit 1 by raising the elevating cup 8 during the first substrate processing step using the processing liquid containing alkali. . For this reason, it can suppress that alkaline mist adheres to the nozzle which discharges the process liquid containing an acid, and the nozzle which discharges an organic type dry solvent, for example. Therefore, it is possible to suppress the generation of salt in the nozzle that discharges the treatment liquid containing the acid and the generation of new particles in the nozzle that discharges the organic dry solvent.

  Thus, according to the said substrate processing method, even if it uses an alkaline processing liquid, the substrate processing method which can suppress the production | generation of a salt and generation | occurrence | production of a new particle can be obtained.

(Substrate processing method 2)
The elevating cup 8 not only shields the alkaline mist but can also be used for shielding mist in a two-fluid spray process, for example. An example in which the elevating cup 8 is used for shielding mist in the two-fluid spraying process will be described as a second example of the substrate processing method.

  FIG. 21 is a flowchart showing a second example of a substrate processing method using the substrate processing apparatus 100b according to the second embodiment, and FIGS. 22 to 24 schematically show states of the substrate processing apparatus 100b in main processes. It is sectional drawing shown. This example is an example in which a substrate treatment using a treatment solution containing an alkali, a substrate treatment using a treatment solution containing an acid, and a drying treatment using an organic dry solvent are sequentially performed.

  As shown in FIG. 21, in this example, the process from step 11 to step 15 shown in FIG. 16 is included. Steps 11 to 15 are the same as those described in the section of the substrate processing method 1, and the description thereof will be omitted.

  When step 15, that is, the drain cup cleaning process is completed, as shown in step 21 in FIG. 21, the elevating cup 8 is raised.

  In this example, the first processing liquid supply unit 2a is moved above the wafer W as shown in FIG. Next, the elevating cup 8 is raised using the elevating mechanism 8a.

  In step 21, the storage tank 4 b is filled with the cleaning liquid 12, for example, and the lower end of the elevating cup 8 is submerged in the cleaning liquid 12. A specific example of the cleaning liquid 12 is pure water (DIW).

  When step 21 is completed, as shown in step 22 in FIG. 21, droplets obtained by mixing the cleaning liquid and the gas are sprayed onto the substrate.

  In this example, as shown in FIG. 23, the two-fluid cleaning liquid 27 generated by simultaneously supplying the cleaning liquid and the gas is sprayed onto the surface of the wafer W. A specific example of the two-fluid cleaning liquid 27 is generated using pure water (DIW) as a cleaning liquid and nitrogen gas as a gas.

  When step 22 is completed, as shown in step 23 in FIG. 21, the elevating cup 8 is lowered and the elevating cup 8 is immersed in the cleaning liquid 12.

  In this example, as shown in FIG. 24, the elevating cup 8 is submerged, for example, in the cleaning liquid 12 of the storage tank 4b. In the submerged state, the cleaning liquid 12 is continuously supplied from the supply pipe 4c, and the cleaning liquid 12 is continuously discharged from the first drain pipe 4d. In this way, the elevating cup 8 is washed.

  In parallel with step 23, as shown in step 24, a treatment liquid containing an acid can be supplied to the substrate to perform the second substrate processing step. Furthermore, as shown in step 25, a rinsing liquid can be supplied to the substrate, and the substrate rinsing process can be performed in parallel.

  When step 25 is completed, step 6 described with reference to FIG. 7, for example, a substrate drying process may be performed. Since the substrate drying process, that is, the process shown in Step 6 is as described above, the description thereof is omitted.

  According to such a substrate processing method, it is possible to suppress the mist from being scattered around the substrate holding unit 1 by raising the elevating cup 8 during the two-fluid spraying process in which mist is likely to occur.

  Thus, the elevating cup provided in the substrate processing apparatus 100b according to the second embodiment can also be used for shielding mist in the two-fluid spraying process.

(Third embodiment)
FIG. 25 is a sectional view schematically showing an example of a substrate processing apparatus according to the third embodiment of the present invention. In FIG. 25, the same parts as those in FIG. 1 are denoted by the same reference numerals, and only different parts will be described.

  As shown in FIG. 25, the substrate processing apparatus 100c according to the third embodiment differs from the substrate processing apparatus 100a according to the first embodiment in that the upper end portion 3f of the drain cup 3 is a reservoir of the outer cup 4. It is that it inclines so that it may become low toward the liquid storage part 3c of the drain cup 3 from the tank 4b. Other parts are substantially the same as those of the substrate processing apparatus 100a according to the first embodiment.

  By tilting the upper end 3f of the drain cup 3 as in this example, the cleaning liquid 12 can easily flow on the upper end 3f when the cleaning liquid 12 overflows from the storage tank 4b. Furthermore, by inclining the upper end 3f, the cleaning liquid 12 can flow toward the outer peripheral wall 3a of the drain cup 3 while accelerating the upper end 3f, and the flow rate of the cleaning liquid 12 can be increased.

  As described above, according to the third embodiment in which the upper end portion 3f of the drain cup 3 is inclined, the cleaning effect of the drain cup 3 using the cleaning liquid 12 overflowed from the storage tank 4b is further enhanced. Is possible.

  FIG. 25 shows an example in which the upper end portion 3f is tilted, which is applied to the first embodiment. However, the third embodiment in which the upper end portion 3f is tilted is the second embodiment. It can also be applied to.

  As mentioned above, although this invention was demonstrated by embodiment, this invention can be variously deformed, without being limited to the said embodiment.

  For example, in the above-described embodiment, a cleaning processing apparatus that performs front and back surface cleaning of a wafer has been described as an example. However, the present invention is not limited thereto, and may be a cleaning processing apparatus that performs cleaning processing on only the front surface or only the back surface. Further, the liquid treatment is not limited to the cleaning treatment, and other liquid treatment may be used.

  Furthermore, in the above embodiment, a case where a semiconductor wafer is used as a substrate to be processed has been described. Needless to say, it is applicable.

Sectional drawing which shows roughly an example of the substrate processing apparatus which concerns on 1st Embodiment of this invention Enlarged sectional view showing the vicinity of the outer cup 4 in an enlarged manner Enlarged sectional view showing the vicinity of the outer cup 4 in an enlarged manner Enlarged sectional view showing the vicinity of the drain cup 3 in an enlarged manner Enlarged sectional view showing the vicinity of the outer cup 4 in an enlarged manner Enlarged sectional view showing the vicinity of the outer cup 4 in an enlarged manner 1 is a flowchart showing an example of a substrate processing method using a substrate processing apparatus 100a according to a first embodiment. Sectional drawing which showed the state of the substrate processing apparatus 100a in the main processes roughly Sectional drawing which showed the state of the substrate processing apparatus 100a in the main processes roughly Sectional drawing which showed the state of the substrate processing apparatus 100a in the main processes roughly Sectional drawing which showed the state of the substrate processing apparatus 100a in the main processes roughly Sectional drawing which showed the state of the substrate processing apparatus 100a in the main processes roughly Sectional drawing which shows roughly an example of the substrate processing apparatus which concerns on 2nd Embodiment of this invention 14A is a cross-sectional view showing a state where the elevating cup 8 is lowered, and FIG. 14B is a cross-sectional view showing a state where the elevating cup 8 is raised. 15A and 15B are enlarged sectional views showing the vicinity of the elevating cup 8 in an enlarged manner, The flowchart which shows the 1st example of the substrate processing method using the substrate processing apparatus 100b which concerns on 2nd Embodiment. Sectional drawing which showed the state of the substrate processing apparatus 100b in the main processes roughly Sectional drawing which showed the state of the substrate processing apparatus 100b in the main processes roughly Sectional drawing which showed the state of the substrate processing apparatus 100b in the main processes roughly Sectional drawing which showed the state of the substrate processing apparatus 100b in the main processes roughly A flow chart which shows the 2nd example of a substrate processing method using substrate processing apparatus 100b concerning a 2nd embodiment. Sectional drawing which showed the state of the substrate processing apparatus 100b in the main processes roughly Sectional drawing which showed the state of the substrate processing apparatus 100b in the main processes roughly Sectional drawing which showed the state of the substrate processing apparatus 100b in the main processes roughly Sectional drawing which shows roughly an example of the substrate processing apparatus which concerns on 3rd Embodiment of this invention

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Substrate holding | maintenance part, 2 ... Process liquid supply mechanism, 2a ... 1st process liquid supply part, 2b ... 2nd process liquid supply part, 2c ... Nozzle (alkali), 2d ... Nozzle (two-fluid spray), 2g ... Nozzle (Acid), 2h ... nozzle (dry solvent), 2i ... nozzle (gas), 3 ... drain cup, 3a ... outer peripheral wall, 3b ... inner peripheral wall, 3c ... liquid container, 3f ... upper end, 4 ... outer cup, 4a ... outer peripheral wall, 4b ... storage tank, 4c ... supply pipe, 4d ... first drainage pipe, 10 ... drainage position, 11 ... supply position, 12 ... cleaning liquid, 13 ... position of upper end 3f, 21 ... alkali Treatment liquid containing 22 ... rinse liquid, 23 ... treatment liquid containing acid, 24 ... rinse liquid, 25 ... dry solvent, 26 ... gas, 27 ... two-fluid cleaning liquid, W ... substrate (wafer).

Claims (15)

A substrate holding unit that holds the substrate and can rotate with the substrate;
A first processing liquid supply unit that supplies a processing liquid containing alkali to the substrate held by the substrate holding unit; and a first processing liquid supply unit that supplies an acid processing liquid to the substrate held by the substrate holding unit. A processing liquid supply mechanism including two processing liquid supply units;
A drain cup provided outside the substrate holding unit and capable of recovering the processing liquid supplied to the substrate;
An outer cup provided outside the drain cup, capable of storing a cleaning liquid, and capable of overflowing the cleaning liquid with respect to the drain cup;
Equipped with,
The drain cup is
An outer peripheral wall provided around the substrate holding portion;
A liquid storage part provided in a lower part of the outer peripheral wall for recovering and storing the processing liquid;
The outer cup is
A storage tank provided around the outer peripheral wall of the drain cup and storing the cleaning liquid;
A cleaning liquid supply unit for supplying the cleaning liquid to the storage tank;
A cleaning liquid drainage section for draining the cleaning liquid from the storage tank to a location different from the drain cup,
The cleaning liquid drainage part of the outer cup is at a position lower than the upper end part of the outer peripheral wall of the drain cup,
The substrate processing apparatus , wherein a cleaning liquid supply unit of the outer cup is located at a position lower than a cleaning liquid drainage unit of the outer cup . The substrate processing apparatus according to claim 1 , wherein an upper end portion of the drain cup is inclined so as to become lower from a storage tank of the outer cup toward a liquid storage portion of the drain cup. The substrate processing apparatus according to claim 1 , further comprising an elevating cup that moves up and down between the storage tank of the outer cup and the upper side of the storage tank. Ascent of the elevating cup, the upper end of the lifting cup, according to claim 3, characterized in that it is located above the portion for supplying a treatment liquid containing an acid of the second processing liquid supply unit Substrate processing equipment. The substrate processing apparatus according to claim 3 , wherein when the elevating cup is raised, a lower end portion of the elevating cup is submerged in a cleaning liquid filled in the storage tank. 4. The substrate processing apparatus according to claim 3 , wherein when the elevating cup is lowered, the entire elevating cup is submerged in a cleaning liquid filled in the storage tank. An elevating mechanism for elevating the elevating cup is provided from the outside of the storage tank to the storage tank,
The substrate processing apparatus according to claim 3 , wherein a part of the lifting mechanism provided in the storage tank is configured to be washable in the storage tank. The treatment liquid supply mechanism includes a dry solvent supply unit that supplies an organic dry solvent,
2. The substrate processing apparatus according to claim 1, wherein when the first processing liquid supply unit is in a processing position, the dry solvent supply unit is in a position different from the processing position. The organic dry solvent is an organic dry solvent containing isopropanol,
The treatment liquid containing alkali is a treatment liquid containing ammonia,
The treatment liquid containing acid is a treatment liquid containing hydrofluoric acid,
The substrate processing apparatus according to claim 8 , wherein the cleaning liquid is pure water. A substrate processing method using the substrate processing apparatus according to any one of claims 1 to 9 ,
A first substrate processing step of supplying a processing liquid containing the alkali to the substrate held by the substrate holding unit and processing the substrate;
A drain cup cleaning step of cleaning the drain cup that has collected the treatment liquid containing the alkali by overflowing the cleaning liquid stored in the outer cup from the outer cup to the drain cup;
A second substrate processing step of supplying a processing liquid containing the acid to the substrate held by the substrate holding unit and processing the substrate;
The substrate processing method characterized by comprising. The substrate processing method according to claim 10 , wherein the substrate that has finished the first substrate processing step is rinsed during the drain cup cleaning step. When the treatment liquid supply mechanism, the drying solvent supply unit for supplying an organic drying solvent, and includes,
The substrate according to claim 10 or 11 , wherein after the second substrate processing step, the substrate that has finished the second substrate processing step is dried using an organic dry solvent. Processing method. The organic dry solvent is an organic dry solvent containing isopropanol,
The treatment liquid containing alkali is a treatment liquid containing ammonia,
The treatment liquid containing acid is a treatment liquid containing hydrofluoric acid,
The substrate processing method according to claim 12 , wherein the cleaning liquid is pure water. The drain cup includes an outer peripheral wall provided around the substrate holding portion;
The outer cup is provided around the outer peripheral wall of the drain cup, and includes a storage tank for storing the cleaning liquid,
When the substrate processing apparatus, which includes a storage tank of the outer cup, the elevating cup lift between the reservoir upward,
During the first substrate processing step, the elevating cup is raised above the storage tank to block the dispersion of the processing liquid containing the alkali around the substrate holding unit,
At the time of the drain cup cleaning step, the elevating cup is lowered into the storage tank, immersed in the cleaning liquid stored in the storage tank, and the elevating cup that has prevented the treatment liquid containing alkali from being scattered is cleaned. the substrate processing method as claimed in any one claims 10 to 13, characterized in that. A storage medium that operates on a computer and stores a program for controlling the substrate processing apparatus,
15. A storage medium characterized in that, when executed, the program causes a computer to control a substrate processing apparatus so that the substrate processing method according to claim 10 is performed.

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