JP4876418B2 - Semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor device, and more particularly to a power semiconductor device having a drift region made of a semiconductor material having a wider band gap than silicon (hereinafter referred to as a wide band gap semiconductor).

  Recently, attempts have been made in the field of power semiconductor devices to use wide band gap semiconductors such as GaN-based compound semiconductors. For example, a p-type semiconductor layer and an n-type semiconductor layer made of a GaN-based compound semiconductor are sequentially stacked on a substrate crystal, and a GaN-based compound semiconductor having a wider band gap than the n-type semiconductor layer on the n-type semiconductor layer. An insulated gate bipolar transistor having a configuration in which a p-type impurity diffusion region and an n-type impurity diffusion region are selectively formed is known (for example, see Patent Document 1).

  In this insulated gate bipolar transistor, the gate electrode is formed through the insulating layer from the exposed surface of the n-type semiconductor layer to the exposed surface of the p-type impurity diffusion region. The emitter electrode and the collector electrode are formed on the upper surface of the n-type impurity diffusion region and the lower surface of the p-type semiconductor layer, respectively.

  In addition, an AlGaN / GaN epitaxial layer is grown on a silicon substrate, a source electrode, a gate electrode and a drain electrode are formed on the surface, and the source electrode is formed on the silicon substrate via via holes reaching the silicon substrate from the surface of the epitaxial layer. An AlGaN / GaN heterostructure field effect transistor having an electrically connected structure has been reported (for example, see Non-Patent Document 1). In this heterostructure field effect transistor, the gate electrode is formed of Pd—Si.

JP-A-11-354786 Masahiro Hikita, 9 others, "350V / 150A AlGaN / GaN power HFET on silicon substrate with source-via grounding (SVG) structure (350V / 150A AlGaN / GaN power HFET on Silicon substrate-with silicon substrate) via grounding (SVG) structure), “IEDM Technical Digest (TECHNICAL DIGETING)” (US), Dec. 2004, p. 803-806

  However, the conventional configuration described above has the following problems at the manufacturing stage. That is, an impurity activation technique by ion implantation and thermal annealing for GaN has not been established yet. Therefore, it is necessary to deposit an impurity layer of a p-type or n-type GaN-based compound semiconductor by a crystal growth method such as a metal organic chemical vapor deposition (MOCVD) method or a molecular beam epitaxy (MBE) method. And thus the threshold value varies.

Further, when forming the n ⁺ -GaN source impurity layer after forming the p-GaN region, the dopant in the p-GaN region is lost. Due to these causes, it is extremely difficult to stably form the p-GaN region with the current technology, and therefore there is almost no possibility that the device disclosed in the above document can be stably realized.

Further, the semiconductor device disclosed in Patent Document 1 has a drawback that the resistance component of the channel region is significantly larger than that of a device using normal silicon (hereinafter referred to as a silicon device). The reason is that the mobility of the inversion layer obtained in the MOS (metal-oxide film-insulated gate made of semiconductor) structure using silicon is about several hundred cm ² / Vs (about 500 cm ² / Vs). On the other hand, the mobility of the inversion layer when using a GaN-based compound semiconductor is as low as several tens of cm ² / Vs.

  The same applies to the case where silicon carbide (SiC) is used as the semiconductor conductor material. Therefore, even if a high breakdown voltage can be realized by using a wide band gap semiconductor such as GaN, in the MIS (metal-insulating film-semiconductor) structure element suitable for, for example, a power switching element, the characteristics of the inversion channel portion are poor. The performance cannot be fully demonstrated. Further, the semiconductor device disclosed in Non-Patent Document 1 requires a negative power source in addition to a positive power source, and thus has a drawback that a driving circuit becomes complicated.

  An object of the present invention is to provide a MIS type power semiconductor device that uses a wide bandgap semiconductor such as a GaN-based compound semiconductor and can perform high-speed switching at high breakdown voltage in order to solve the above-described problems caused by the prior art. To do.

To solve the above problems and achieve an object, a semiconductor device according to this invention, a first semiconductor layer of silicon, said stacked on the part of the first semiconductor layer and the insulating layer A second semiconductor layer made of a semiconductor material having a wider band gap than silicon, laminated on the insulating layer, an insulated gate semiconductor element formed using the first semiconductor layer, and the second A diode formed using the semiconductor layer, the insulated gate semiconductor element, a short-circuit electrode for short-circuiting the diode, a first electrode connected to the insulated gate semiconductor element, and the diode A second electrode , wherein the insulating layer is thin on the short-circuit electrode side and thick on the second electrode side .

The semiconductor device according to this invention is the invention described above, the insulated gate semiconductor device, the first semiconductor layer a gate electrode through a gate insulating film on the main surface of the formed, and the gate An insulated gate field effect transistor in which a source region and an impurity diffusion region are formed along a main surface of the first semiconductor layer with an electrode interposed therebetween, the first electrode being connected to the source region, and the impurity The short-circuit electrode is connected to the diffusion region.

Further, the semiconductor device according to this invention, in the invention described above, the insulated gate semiconductor device with a gate insulating film on the first semiconductor layer within the first trench formed from the main surface of the gate An electrode is formed, and an impurity diffusion region is formed along the first main surface of the first semiconductor layer adjacent to the gate electrode, and further along the second main surface of the first semiconductor layer. An insulated gate field effect transistor in which a source region is formed, wherein the first electrode is connected to the source region, and the short-circuit electrode is connected to the impurity diffusion region.

The semiconductor device according to this invention is the invention described above, the second semiconductor layer has a p-type region and the n-type region, the diode junction of the said p-type region n-type region The short circuit electrode is connected to the p-type region, and the second electrode is connected to the n-type region.

The semiconductor device according to this invention is the invention described above, the diode is said second semiconductor layer and the metal of the Schottky composed Schottky diode by bonding, the short-circuit electrodes are connected to the metal The second electrode is connected to the second semiconductor layer.

The semiconductor device according to the present invention includes a first semiconductor layer made of silicon, an insulating layer stacked on the first semiconductor layer, and a band gap higher than that of silicon stacked on the insulating layer. A second semiconductor layer made of a wide semiconductor material, a diode formed using the second semiconductor layer, a first electrode connected to the anode of the diode, and a cathode of the diode A second electrode, wherein the insulating layer is thin on the first electrode side and thick on the second electrode side.

In the semiconductor device according to the present invention as set forth in the invention described above, the second semiconductor layer has a p-type region and an n-type region, and the diode is formed by a junction of the p-type region and the n-type region. It is a pn diode comprised, It is characterized by the above-mentioned.

In the semiconductor device according to the present invention as set forth in the invention described above, the diode is a Schottky diode configured by a Schottky junction of the second semiconductor layer and a metal.

The semiconductor device according to the present invention is characterized in that, in the above-mentioned invention, the second semiconductor layer is made of a semiconductor material having a band gap of 3 eV or more.

The semiconductor device according to the present invention is characterized in that, in the above-described invention, the second semiconductor layer is made of a GaN-based compound semiconductor material.

In the semiconductor device according to the present invention as set forth in the invention described above, the insulating layer is made of AlN.

The semiconductor device according to the present invention is the above-described invention, wherein the insulating layer is made of Al. ₂ O _Three It is characterized by being made of.

According to the above-described invention, the bulk region for ensuring the withstand voltage is configured by the wide band gap semiconductor, the MIS region for enabling easy switching is configured by the silicon semiconductor, and the bulk region and the MIS region are short-circuited. By connecting with each other, it is possible to realize an element having the excellent properties of both a wide band gap semiconductor and a silicon semiconductor. That is, with respect to the bulk region, a high breakdown voltage can be realized at a short distance. Therefore, since the volume of the bulk region can be reduced, accumulation of excess carriers in the conductive state can be suppressed, and high-speed switching can be realized.

On the other hand, for the MIS region, high inversion layer mobility similar to that of a silicon MOS structure can be obtained by using a silicon device manufactured by a silicon process for which ultrafine processing technology has already been established. In addition, a stable MOS interface can be obtained. Accordingly, the channel resistance can be kept low, and a wide degree of freedom in designing gate characteristics such as threshold values can be secured. In addition, variation in characteristics can be reduced, and high gate reliability can be ensured.

According to the above-described invention, the short-circuit electrode and the second electrode are disposed on the first main surface side of the first semiconductor layer, and the first electrode is disposed on the second main surface side of the first semiconductor layer. Since the gate electrode becomes a buried wiring, the wiring can be easily routed and the area efficiency of the device can be increased. Furthermore, according to the above-described invention, there is a difference in level between the short-circuit electrode and the second electrode, and the distance between the two electrodes becomes long, so that a discharge occurs between the two electrodes to prevent the breakdown voltage from being lowered. be able to. In addition, since the thermal resistance of the insulating layer becomes smaller on the side of the short-circuit electrode where the amount of heat generated is larger, heat dissipation to the first semiconductor layer occurs effectively via the insulating layer. Further, according to the above-described invention, there is a height difference between the first electrode and the second electrode, and the distance between the two electrodes becomes long, so that a discharge occurs between the two electrodes and the withstand voltage decreases. Can be prevented.

  According to the semiconductor device of the present invention, it is possible to obtain a MIS type power semiconductor device that uses a wide bandgap semiconductor such as a GaN-based compound semiconductor and can perform high-speed switching at high breakdown voltage.

  Hereinafter, preferred embodiments of a semiconductor device according to the present invention will be described in detail with reference to the accompanying drawings. In the present specification and the accompanying drawings, it means that electrons or holes are majority carriers in layers and regions with n or p, respectively. Further, + and − attached to n and p mean that the impurity concentration is higher and lower than that of the layer or region where it is not attached. Note that, in the following description of the embodiments and the accompanying drawings, the same reference numerals are given to the same components, and duplicate descriptions are omitted.

Embodiment 1 FIG.
FIG. 1 is a cross-sectional view showing a configuration of a main part of the semiconductor device according to the first embodiment. In FIG. 1, the left half is a MIS region made of a silicon semiconductor, and the right half is a bulk region made of a wide band gap semiconductor having a band gap of 3 eV or more. As shown in FIG. 1, in the MIS region, an n ⁺ source diffusion region 3 and an n ⁺ diffusion region 7 are formed along a first main surface of a p-type Si layer (hereinafter referred to as a p-Si layer) 2. Are formed apart.

A gate insulating film 5 is formed on the p-Si layer 2 on the region where the inversion layer between the n ⁺ source diffusion region 3 and the n ⁺ diffusion region 7 is formed. A gate electrode 6 is formed on the top. A source electrode 4 is in ohmic contact with the n ⁺ source diffusion region 3. One end of the short-circuit electrode 8 is in ohmic contact with the n ⁺ diffusion region 7. The source electrode 4, the gate electrode 6, and the short-circuit electrode 8 are insulated from each other by the insulating film 12.

  In the bulk region, the insulating layer 9 is stacked along the first main surface of the p-Si layer 2. On the insulating layer 9, an n-type GaN layer (hereinafter referred to as an n-GaN layer) 10 is stacked. A p-type GaN layer (hereinafter referred to as a p-GaN layer) 11 is stacked on the portion of the n-GaN layer 10 near the MIS region. The other end of the short-circuit electrode 8 is in ohmic contact with the p-GaN layer 11. The drain electrode 13 is in ohmic contact with the portion of the n-GaN layer 10 that is away from the MIS region. The drain electrode 13 and the short-circuit electrode 8 are insulated and separated by the insulating film 14.

A back electrode 1 is formed on the entire second main surface of the p-Si layer 2. Note that the back electrode 1 may not be provided. In that case, the p-Si layer 2 may be electrically floating, but may have a common potential with the source electrode 4. Here, the p-Si layer 2, the n-GaN layer 10 and the p-GaN layer 11, the source electrode 4, the drain electrode 13, the n ⁺ source diffusion region 3 and the n ⁺ diffusion region 7 are the first semiconductor layer, This corresponds to the second semiconductor layer, the first electrode, the second electrode, the source region, and the impurity diffusion region.

As the insulating layer 9, for example, SiO ₂ , Si ₃ N ₄ , AlN, Al ₂ O ₃ , or the same element as those, but materials having different composition ratios can be used. As the insulating films 12 and 14, for example, Si ₃ N ₄ or SiO ₂ can be used.

  As the source electrode 4, the short-circuit electrode 8 and the drain electrode 13, for example, a metal such as Al, Ni, Ti, W, Mo, Pt, Pd, Cr, Ir, Au, Ag or Zn, or an alloy or silicide thereof. Can be used. As the gate electrode 6, a material used in a normal silicon MOSFET (MOS type field effect transistor), for example, polycrystalline silicon can be used.

Next, an example of a manufacturing process of the semiconductor device according to the first embodiment will be described. 2 to 10 are cross-sectional views of the semiconductor device for explaining the manufacturing process. First, for example, a 20Ω p-Si substrate is prepared. This p-Si substrate becomes the p-Si layer 2. Then, for example, As is ion-implanted into the region to be the n ⁺ source diffusion region 3 and the region to be the n ⁺ diffusion region 7 of the p-Si substrate at a dose of 1 × 10 ¹⁵ cm ⁻² . Subsequently, for example, heat treatment is performed at a temperature of 1000 ° C. for about 30 minutes, and the implanted impurities are activated to form the n ⁺ source diffusion region 3 and the n ⁺ diffusion region 7 (FIG. 2).

Next, an insulating film (which becomes the gate insulating film 5) having a thickness of about 1000 angstroms is formed by, for example, thermal oxidation, and an n ⁺ type polycrystalline silicon is formed thereon by a CVD (chemical vapor deposition) method or the like. A film (which becomes the gate electrode 6) is deposited. Then, a part of the polycrystalline silicon film is removed by photoetching to form a gate electrode 6, and the insulating film is etched using the gate electrode 6 as a photomask to form the gate insulating film 5 (FIG. 3).

Next, an insulating film such as AlN (which becomes the insulating layer 9) is deposited to a thickness of, for example, about 1 μm by CVD or the like. Then, a part of the insulating film such as AlN is removed by photoetching to form an insulating layer 9 in the bulk region (FIG. 4). Next, an insulating film such as SiO ₂ (which becomes the insulating film 12) is deposited by CVD or the like, the bulk region portion of the insulating film is removed, and a gate stack structure, n ⁺ source diffusion region 3 is formed in the MIS region. Then, an insulating film 12 covering the n ⁺ diffusion region 7 is formed (FIG. 5). Up to this point, it is a normal silicon process.

  Next, n-GaN (which becomes the n-GaN layer 10) and p-GaN (which becomes the p-GaN layer 11) are sequentially grown by MOCVD (FIG. 6). At that time, n-GaN and p-GaN are selectively grown only on the insulating layer 9 such as AlN. A method for growing GaN is disclosed in, for example, Japanese Patent Application Laid-Open No. 2003-59948. Next, the P-GaN film is photoetched by dry etching, for example, to leave the p-GaN layer 11 only in the portion near the MIS region (FIG. 7).

Next, after opening a via hole in the insulating film 12 above the n ⁺ diffusion region 7, a conductor such as a Ti / Al alloy (which becomes the short-circuit electrode 8 and the drain electrode 13) is deposited. Then, the conductor is patterned to form the short-circuit electrode 8 and the drain electrode 13 (FIG. 8). Next, an insulating film 14 such as SiO ₂ is deposited, and contact holes 15 and 16 penetrating the insulating films 12 and 14 and reaching the n ⁺ source diffusion region 3 and the drain electrode 13 are formed (FIG. 9).

Next, a conductor such as Al is deposited by sputtering or the like to form the source electrode 4 in contact with the n ⁺ source diffusion region 3 and the drain electrode 17 in contact with the drain electrode 13. Subsequently, the back electrode 1 made of a conductor such as Al is formed on the back surface of the p-Si substrate by sputtering or the like, thereby completing the semiconductor device (FIG. 10).

  8 to 10 is compared with the configuration shown in FIG. 1, the shape of the short-circuit electrode 8, the shape of the source electrode 4, the shape of the drain electrode 13, the presence or absence of the drain electrode 17, and the insulating films 12 and 14. Although there are differences such as the shape and the presence or absence of the insulating film 14 in the MIS region, the configuration of both is substantially the same.

Next, functions and effects of the semiconductor device of the first embodiment will be described. The breakdown voltage of the MOSFET composed of the n ⁺ source diffusion region 3, the p-Si layer 2 and the n ⁺ diffusion region 7 is about 30 V regardless of the breakdown voltage of the entire element, that is, the breakdown voltage between the source electrode 4 and the drain electrode 13. . The reason is that when the semiconductor device of the first embodiment is used as a power switching element, for example, a gate signal having a relatively high voltage of about +10 to +15 V is input to the gate electrode 6 in the on state.

  In addition to this, the voltage applied to the gate electrode 6 may exceed 20 V due to the superposition of external noise during the switching operation. For this reason, if the breakdown voltage is set too low, breakdown of the element occurs due to the input of the gate signal. On the other hand, if the breakdown voltage of the MOSFET is about 30 V, breakdown of the element due to the input of the gate signal can be avoided.

  In addition, since the bulk region is formed of a wide band gap semiconductor, the length of the bulk region, that is, the length of the n-GaN layer 10 is about 1/10 of that of a normal silicon device, and the normal silicon device The same breakdown voltage can be ensured. For example, when the length of the n-GaN layer 10 is approximately 10 μm, a breakdown voltage of about 1000 V can be realized.

  In order to obtain the same breakdown voltage with a normal silicon device, the length of the bulk region needs to be approximately 100 μm. In other words, according to the first embodiment, the on-resistance of the bulk region is 1/10 or less that of a normal silicon device, so that a switching operation can be performed at a high speed with a low resistance, and a device with a high breakdown voltage can be easily obtained. There is an effect that it can be realized.

  In addition, an insulating layer 9 is provided between the n-GaN layer 10 and the p-Si layer 2 because a high breakdown voltage is applied. The insulating layer 9 physically suppresses carriers from spreading in the vertical direction (depth direction) in the n-GaN layer 10, similarly to the insulating layer in the SOI (silicon-on-insulator) device. As a result, the accumulation of excess carriers can be further effectively suppressed, so that the switching operation can be speeded up.

When the bulk region is made of GaN, the insulating layer 9 is preferably made of AlN. First, the AlN layer becomes a growth buffer layer in GaN crystal growth. This produces an effect that a high-quality GaN layer 10 can be obtained. Second, AlN has a better heat transfer coefficient than SiO ₂ . As a result, the heat generated in the n-GaN layer 10 and the p-GaN layer 11 is efficiently transferred to the p-Si layer 2, so that it is possible to effectively suppress heat generation.

  Instead of the p-GaN layer 11, a layer corresponding to the p-GaN layer 11 may be formed of a metal material that is Schottky bonded to the n-GaN layer 10. As the metal material in this case, for example, a metal such as Al, Ni, Ti, W, Mo, Pt, Pd, Cr, Ir, Au, Ag, or Zn, or an alloy or silicide thereof can be used. The configuration in which the Schottky diode is formed in the bulk region as described above is suitable for a medium breakdown voltage element having a breakdown voltage class of 3000 V or less because the on-voltage is lower than that in the case of forming a pn diode.

Embodiment 2. FIG.
FIG. 11 is a cross-sectional view showing a configuration of a main part of the semiconductor device according to the second embodiment. As shown in FIG. 11, the second embodiment is a modification of the first embodiment, in which the insulating layer 9 between the p-Si layer 2 and the n-GaN layer 10 is thin on the short-circuit electrode 8 side, and the drain electrode It is formed to be thick on the 13th side. As in the illustrated example, the insulating layer 9 may be thicker continuously from the short-circuit electrode 8 side toward the drain electrode 13 side, or may be thicker in a stepped manner.

The insulating layer 9 may be made of one kind of material, for example, only SiO ₂ or only AlN, or may be made of a combination of SiO ₂ and AlN. When SiO ₂ is used as the material of the insulating layer 9, silicon may be selectively oxidized (LOCOS). Since other configurations are the same as those of the first embodiment, description thereof is omitted.

  According to the second embodiment, in addition to the effects of the first embodiment, the following effects can be obtained. First, in the region of the p-GaN layer 11 and the n-GaN layer 10 in the vicinity of the short-circuit electrode 8, the electric field is high and the amount of heat generation is large, but the insulating layer 9 is thin in this region. Thermal resistance is reduced. Therefore, the heat dissipation effect to the p-Si layer 2 is enhanced. Second, since there is a height difference between the short-circuit electrode 8 and the drain electrode 13, the distance between the short-circuit electrode 8 and the drain electrode 13 is increased. Therefore, since it becomes difficult for discharge to occur between the short-circuit electrode 8 and the drain electrode 13, it is possible to prevent the breakdown voltage from being lowered.

  Third, since the step on the p-GaN layer 11 side of the short-circuit electrode 8 is relaxed, the step (so-called step coverage) can be easily embedded by the short-circuit electrode 8. Here, although the insulating layer 9 insulates and separates the n-GaN layer 10 and the p-Si layer 2, the potential difference between the n-GaN layer 10 and the p-Si layer 2 is shorter than the drain electrode 13 side. Lower on the 8th side. Therefore, there is no problem even if the insulating layer 9 is thinned on the short-circuit electrode 8 side.

For example, in an element having a withstand voltage of 3000 V in which the insulating layer 9 is made of SiO ₂ (dielectric breakdown field: 10 MV / cm), the thickness of the insulating layer 9 needs to be approximately 3 μm. In this element, by thinning the insulating layer 9 on the short-circuit electrode 8 side, the heat dissipation effect on the short-circuit electrode 8 side, the step embedding property of the short-circuit electrode 8 and the like can be improved.

Embodiment 3 FIG.
FIG. 12 is a cross-sectional view showing a configuration of a main part of the semiconductor device of the third embodiment. As shown in FIG. 12, the third embodiment is a modification of the first embodiment, in which the MOSFET gate structure in the MIS region is a trench gate type. That is, in this MOSFET, a trench 20 reaching the n-Si layer 28 provided between the p-Si layer 2 and the back electrode 1 is formed from the surface of the p-Si layer 2, and gate insulation is formed in the trench 20. The gate electrode 26 is embedded through the film 25. In this configuration, the back electrode 1 serves as a source electrode. Further, the vicinity of the interface between the n-Si layer 28 and the back electrode 1 becomes an n ⁺ source diffusion region 23.

  According to the third embodiment, in addition to the effects of the first embodiment, the following effects can be obtained. That is, since the source electrode is provided on the back surface side of the element and the gate electrode 26 is an embedded wiring, the short electrode 8 and the drain electrode 13 are the only electrodes disposed on the surface side of the element. Therefore, the wiring can be easily routed, and the area efficiency of the device can be increased. Further, by changing the thickness of the insulating layer 9 between the p-Si layer 2 and the n-GaN layer 10 as in the second embodiment, the same effect as in the second embodiment can be obtained.

  As described above, the present invention is not limited to the above-described embodiment, and various modifications can be made. For example, SiC, AlGaN, diamond, or the like can be used in addition to GaN as the wide band gap semiconductor material constituting the second semiconductor layer. In addition, a pn diode or a Schottky diode can be configured only by the configuration of the bulk region without providing the MIS region. Furthermore, the numerical values described in the embodiments are merely examples, and the present invention is not limited to these values. However, the present invention is similarly achieved even if the p-type and n-type conductivity types are reversed.

  As described above, the semiconductor device and the manufacturing method thereof according to the present invention are useful for power conversion devices such as inverters, power supply devices such as various industrial machines, and power semiconductor devices used for automobile igniters.

2 is a cross-sectional view showing a configuration of a main part of the semiconductor device according to the first embodiment. FIG. FIG. 6 is a cross-sectional view for illustrating the manufacturing process for the semiconductor device of the first embodiment. FIG. 6 is a cross-sectional view for illustrating the manufacturing process for the semiconductor device of the first embodiment. FIG. 6 is a cross-sectional view for illustrating the manufacturing process for the semiconductor device of the first embodiment. FIG. 6 is a cross-sectional view for illustrating the manufacturing process for the semiconductor device of the first embodiment. FIG. 6 is a cross-sectional view for illustrating the manufacturing process for the semiconductor device of the first embodiment. FIG. 6 is a cross-sectional view for illustrating the manufacturing process for the semiconductor device of the first embodiment. FIG. 6 is a cross-sectional view for illustrating the manufacturing process for the semiconductor device of the first embodiment. FIG. 6 is a cross-sectional view for illustrating the manufacturing process for the semiconductor device of the first embodiment. FIG. 6 is a cross-sectional view for illustrating the manufacturing process for the semiconductor device of the first embodiment. FIG. 6 is a cross-sectional view showing a configuration of a main part of a semiconductor device according to a second embodiment. FIG. 10 is a cross-sectional view showing a configuration of a main part of a semiconductor device according to a third embodiment.

Explanation of symbols

2 First semiconductor layer 3, 23 Source region 4 1st electrode 5, 25 Gate insulating film 6, 26 Gate electrode 7 Impurity diffusion region 8 Short circuit electrode 9 Insulating layer 10, 11 2nd semiconductor layer 13 2nd electrode 20 trench

Claims (12)

A first semiconductor layer made of silicon;
An insulating layer stacked on a portion of the first semiconductor layer;
A second semiconductor layer made of a semiconductor material having a wider band gap than silicon, which is stacked on the insulating layer;
An insulated gate semiconductor element formed using the first semiconductor layer;
A diode formed using the second semiconductor layer;
A short-circuit electrode for short-circuiting the insulated gate semiconductor element and the diode;
A first electrode connected to the insulated gate semiconductor element;
A second electrode connected to the diode;
Equipped with a,
The semiconductor device according to claim 1, wherein the insulating layer is thin on the short-circuit electrode side and thick on the second electrode side .   In the insulated gate semiconductor device, a gate electrode is formed on a main surface of the first semiconductor layer via a gate insulating film, and along the main surface of the first semiconductor layer with the gate electrode interposed therebetween. An insulated gate field effect transistor in which a source region and an impurity diffusion region are formed, wherein the first electrode is connected to the source region, and the short-circuit electrode is connected to the impurity diffusion region. The semiconductor device according to claim 1.   In the insulated gate semiconductor device, a gate electrode is formed in a trench formed from a first main surface of the first semiconductor layer through a gate insulating film, and the first electrode is adjacent to the gate electrode. An insulated gate field effect transistor in which an impurity diffusion region is formed along a first main surface of the first semiconductor layer and a source region is formed along a second main surface of the first semiconductor layer; The semiconductor device according to claim 1, wherein the first electrode is connected to the source region, and the short-circuit electrode is connected to the impurity diffusion region.   The second semiconductor layer has a p-type region and an n-type region, and the diode is a pn diode configured by a junction of the p-type region and the n-type region, and the short-circuited to the p-type region. The semiconductor device according to claim 1, wherein an electrode is connected, and the second electrode is connected to the n-type region.   The diode is a Schottky diode configured by a Schottky junction between the second semiconductor layer and a metal, the short-circuit electrode is connected to the metal, and the second electrode is connected to the second semiconductor layer. The semiconductor device according to claim 1, wherein the semiconductor device is formed. A first semiconductor layer made of silicon;
  An insulating layer laminated on the first semiconductor layer;
  A second semiconductor layer made of a semiconductor material having a wider band gap than silicon, which is stacked on the insulating layer;
  A diode formed using the second semiconductor layer;
  A first electrode connected to the anode of the diode;
  A second electrode connected to the cathode of the diode,
  The semiconductor device, wherein the insulating layer is thin on the first electrode side and thick on the second electrode side. 7. The second semiconductor layer has a p-type region and an n-type region, and the diode is a pn diode configured by a junction of the p-type region and the n-type region. A semiconductor device according to 1. The semiconductor device according to claim 6, wherein the diode is a Schottky diode configured by a Schottky junction between the second semiconductor layer and a metal . The semiconductor device according to claim 1, wherein the second semiconductor layer is made of a semiconductor material having a band gap of 3 eV or more. The semiconductor device according to claim 9, wherein the second semiconductor layer is made of a GaN-based compound semiconductor material. The semiconductor device according to claim 1, wherein the insulating layer is made of AlN. The insulating layer is made of Al. ₂ O _Three The semiconductor device according to claim 1, wherein the semiconductor device is made of.

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