JP4812525B2 - Semiconductor device, semiconductor device mounting body, and semiconductor device manufacturing method - Google Patents

Description

  The present invention relates to a structure and manufacturing method of a CSP (Chip Size Package, hereinafter referred to as a wafer level CSP) that is packaged in the state of a semiconductor wafer, and also relates to a mounting body on which a wafer level CSP is mounted. is there.

2. Description of the Related Art Conventionally, as a method for manufacturing a wafer level CSP, a method of packaging in the state of a semiconductor wafer (see, for example, the prior art in Patent Document 1) has been widely used.
A conventional manufacturing method and structure of the wafer level CSP will be described below with reference to FIG.

  FIG. 12 is a cross-sectional view showing a conventional manufacturing method and structure. As shown in FIG. 12A, the semiconductor wafer 1 has a plurality of semiconductor chips 2, and the semiconductor chip 2 has a semiconductor on the surface. The circuit forming layer 2a and the semiconductor electrode 3 are provided.

  As a method for manufacturing the wafer level CSP, the insulating protective film 4 is formed on the surface of the semiconductor circuit forming layer 2 a of the semiconductor wafer 1, and the insulating protective film 4 is opened to expose the semiconductor electrode 3 from the insulating protective film 4. A rewiring 5 for routing the wiring from the semiconductor electrode 3 is formed, and a post 6 is formed on the rewiring 5 and protected by a sealing resin 7.

Next, as shown in FIG. 12B, the sealing resin 7 is ground, the post 6 is exposed, the external electrode 8 is formed on the post 6, and the back surface side of the semiconductor wafer 1 is ground to give a predetermined Make it thick.
After that, as shown in FIG. 12C, the boundary of the semiconductor chip 2 is cut off by dicing and divided into a plurality of separated semiconductor devices 9.
JP2000-243729

  However, in the conventional structure as described above, the side surface of the semiconductor chip 2 and the side surface of the semiconductor circuit forming layer 2a are exposed on the side surface of the semiconductor device 9 separated as shown in FIG. In addition, there is a problem that the reliability of the semiconductor device 9 is reduced due to moisture permeation, peeling or destruction from the exposed surface.

  Further, as shown in FIG. 13, the external electrode 8 of the semiconductor device 9 is mounted on the mounting substrate 10 by the mounting portion 11, and the underfill resin 12 is filled between the semiconductor device 9 and the mounting substrate 10. Although the fillet 12a is formed in the periphery, the amount of creeping of the fillet 12a tends to be larger at the center portion than the corner portion of the semiconductor device 9, and the amount of creeping of the fillet 12a at the corner portion of the semiconductor device 9 is reduced accordingly. Resulting in. As a result, the shape of the fillet 12a varies, and the side surfaces of the semiconductor chip 2 and the semiconductor circuit formation layer 2a are not sufficiently protected by the underfill resin 12a at the corner portion of the semiconductor device 9, and the sealing resin 7 and The stress concentrates on the interface with the semiconductor chip 2, and the crack 13 is generated, so that the semiconductor circuit forming layer 2 a is broken, resulting in a problem that it does not function electrically.

  Further, with respect to the above problems, in the conventional structure (for example, see Patent Document 1), after forming grooves on the surface of the semiconductor wafer, the entire circuit surface including the grooves is protected with a sealing resin. Then, it is separated into pieces by dicing with a width narrower than the groove, and the side surface of the semiconductor chip is protected with a sealing resin. However, if the cutting waste generated when forming the groove is not accurately removed, there is a problem that a defect occurs on the semiconductor circuit formation surface, rewiring or post, and the groove formation on the surface of the semiconductor chip. In this case, chipping of the semiconductor chip is likely to occur, and there is a problem in stability.

  In addition, since the surface (circuit surface) of the semiconductor chip and the side surface of the semiconductor chip are collectively protected with a common sealing resin, the sealing resin that protects the surface of the semiconductor chip and the sealing that protects the side surface of the semiconductor chip. The stop resin is the same material, and it has been difficult to individually adopt the optimum material for protecting the surface of the semiconductor chip and the optimum material for protecting the side surface of the semiconductor chip.

  The present invention can prevent moisture permeation, peeling, or destruction from the side surface, and prevents cutting waste generated at the time of groove formation from adhering to the semiconductor circuit formation surface, rewiring, or post and causing problems. An object of the present invention is to provide a semiconductor device, a mounting body of the semiconductor device, and a method of manufacturing the semiconductor device that can prevent variation in the shape of the fillet during mounting.

In order to solve the above problem, a semiconductor device according to the first aspect of the present invention includes a semiconductor chip having a semiconductor circuit formation layer on the surface,
A semiconductor electrode provided on a surface of the semiconductor chip,
An insulating resin to protect and insulate the surface of the semiconductor chip,
Rewiring electrically connected to the semiconductor electrode;
A post which is connected to the redistribution electrically,
And a first sealing resin for protecting the said post and the surface and the rewiring of the semiconductor chip,
With a second sealing resin covers a portion of the side surface and the side surface of the semiconductor chip of the semiconductor circuit layer and the side surface of the first sealing resin, a third sealing resin side of said semiconductor chip Cover the rest ,
The length of the portion covered with the second sealing resin on the side surface of the semiconductor chip and the side surface of the first sealing resin is covered with the third sealing resin on the side surface of the semiconductor chip. Longer than the length of the part
Said 2nd sealing resin and said 3rd sealing resin are low viscosity and low elasticity compared with said 1st sealing resin .

  According to this, the side surface of the first sealing resin, the side surface of the semiconductor circuit forming layer, and a part of the side surface of the semiconductor chip are covered with the second sealing resin, and the remaining portion of the side surface of the semiconductor chip is the third side. Since it is covered with the sealing resin, each of the side surfaces is protected by the second and third sealing resins. Therefore, moisture permeation from each side surface can be prevented and stress can be relaxed, and the semiconductor device can be prevented from being peeled off or broken, thereby improving the reliability of the semiconductor device.

  In addition, by providing the first sealing resin, the second sealing resin, and the third sealing resin separately, the first sealing resin includes the surface of the semiconductor chip, the rewiring, and the post. A highly reliable material that is optimal for protection can be adopted, and another material suitable for relieving the stress acting on each of the side surfaces is adopted for the second and third sealing resins. be able to.

The semiconductor device according to the second invention is the third sealing resin covers the back surface of the semiconductor chip.
According to this, the back surface of the semiconductor chip is protected by the third sealing resin.

The semiconductor device according to the third invention, the a side surface of the semiconductor chip, antirunning step portion to stop the flow of the underfill resin toward the rear surface side of the semiconductor chip from the post side projects to the outer side is formed,
The flow stopping step is located at a depth beyond the semiconductor circuit forming layer from the first sealing resin side ,
The step portion for preventing flow is formed at the interface between the second sealing resin and the third sealing resin .

The fourth invention is a mounting body in which the semiconductor device according to the third invention is mounted on a mounting board,
External electrodes are provided on the post of the semiconductor device,
Wherein the external electrode and the said mounting substrate are electrically connected,
The underfill resin between the semiconductor device and the mounting substrate is protected mounting part is filled,
In which the fillet of the underfill resin has reached up to the stepped portion for the flow stop.

  According to this, since the rise of the fillet of the underfill resin is stopped by the step portion for preventing flow, the rise amount of the fillet at the corner portion of the semiconductor device and the rise amount of the fillet at the center portion of the semiconductor device are almost equal. Thus, variation in fillet shape during mounting can be prevented. Thereby, the corner portion of the semiconductor device is sufficiently protected by the fillet.

A method for manufacturing a semiconductor device according to a fifth aspect of the invention is a method for manufacturing a semiconductor device by dicing a semiconductor wafer having a plurality of semiconductor chips each having a semiconductor circuit forming layer on a surface thereof.
A step of covering the surface of a semiconductor wafer having a plurality of semiconductor chips with a first sealing resin;
By dicing between the semiconductor chip from the first sealing resin side, between the semiconductor chip, forming a first groove from the first sealing resin side to a depth exceeding the semiconductor circuit layer When,
A step of filling the second sealing resin to the first groove from the first sealing resin side,
Wherein by dicing from the opposite side of the between the semiconductor chip the first sealing resin, wherein between the semiconductor chip, the second grooves reaching said second sealing resin of the first groove Forming a step;
A step of filling the third sealing resin to said second groove from the opposite side to the first sealing resin,
Diced by the first and the second narrower than the groove dicing width, the said second sealing resin and a side surface of the first sealing resin and a side surface of the semiconductor circuit layer and the side surface of the semiconductor chip in a state in which the third sealing resin left on the side surface and the back surface of the semiconductor chip with leaves, possess a step of dicing,
The length of the portion covered with the second sealing resin on the side surface of the semiconductor chip and the side surface of the first sealing resin is covered with the third sealing resin on the side surface of the semiconductor chip. Longer than the length of the part
Said 2nd sealing resin and said 3rd sealing resin are low viscosity and low elasticity compared with said 1st sealing resin .

  According to this, since the first and second grooves are formed between the semiconductor chips after covering the surface of the semiconductor wafer with the first sealing resin, when forming the first and second grooves, The surface of the semiconductor wafer is protected by the first sealing resin. Therefore, it is possible to prevent the cutting waste generated at the time of forming the first and second grooves from remaining on the surface of the semiconductor wafer, to prevent the surface of the semiconductor chip from being contaminated by the cutting waste, Further, it is possible to prevent the semiconductor chip from being chipped, thereby preventing the occurrence of defects.

  The first sealing resin can be made of a highly reliable material that is optimal for protecting the surface of the semiconductor wafer, and the second sealing resin can easily flow into the first groove. Another material can be adopted, and similarly, the third sealing resin can be made of a material that can easily flow into the second groove. The reliability of the semiconductor device is improved.

  Further, by dicing and dividing the semiconductor device into pieces, the side surface of the first sealing resin, the side surface of the semiconductor circuit forming layer, and the side surface of the semiconductor chip are protected by the second and third sealing resins. Therefore, moisture can be prevented from penetrating from the side surfaces and stress can be relaxed. Thereby, peeling and destruction of the semiconductor device can be prevented, and the reliability of the semiconductor device is improved. Furthermore, the back surface of the semiconductor chip is protected by a third sealing resin.

The method of manufacturing a semiconductor device in the sixth invention, after the step of filling the third sealing resin in the second groove, grinding the third sealing resin remaining on the back surface side of the semiconductor chip The process of removing
Then, by dicing in a state where the third sealing resin left on the side surface of the semiconductor chip, in which a step of singulating.

The method of manufacturing a semiconductor device in the seventh invention, after the step of filling the third sealing resin in the second groove, by the first and the narrower dicing width than the second groove, the second It performs the step of forming the third groove from the sealing resin side to a depth exceeding the semiconductor circuit layer,
Then, diced by a narrow dicing width than said third groove, in which a step of singulating.

  According to this, on the side surface of the separated semiconductor device, a step portion for preventing flow is formed that protrudes outward and stops the flow of the underfill resin from the first sealing resin side toward the back surface side of the semiconductor chip. Is done. As a result, when the semiconductor device is mounted on the mounting substrate, the rise of the fillet of the underfill resin is stopped by the step portion for preventing flow, so that the amount of rise of the fillet at the corner portion of the semiconductor device and the center portion of the semiconductor device The amount of rise of the fillet becomes substantially uniform, and variations in the shape of the fillet during mounting can be prevented. Thereby, the corner portion of the semiconductor device is sufficiently protected by the fillet.

As described above, according to the present invention, since the side surface of the semiconductor device is protected by the second and third sealing resins, moisture penetration from the side surface can be prevented and stress can be relaxed. Separation and destruction of the semiconductor device can be prevented, and the reliability of the semiconductor device is improved.

  Also, when the semiconductor device is mounted on the mounting board, the rise of the fillet of the underfill resin is stopped by the flow stop step portion, so that variation in the shape of the fillet can be prevented. The part is well protected by the fillet.

  Further, since the surface of the semiconductor wafer is protected by the first sealing resin when the first and second grooves are formed, the cutting waste generated during the formation of the first and second grooves is removed from the surface of the semiconductor wafer. Or the surface of the semiconductor chip can be prevented from being contaminated by cutting chips, thereby preventing the occurrence of defects.

  The first sealing resin can employ a highly reliable material that is optimal for protecting the surface of the semiconductor chip. The second and third sealing resins include the first and second sealing resins. Another material suitable for relieving stress acting on the side surface that can easily flow into the second groove can be adopted, so that the semiconductor device can be easily manufactured and the reliability of the manufactured semiconductor device is improved. .

  In the semiconductor device of the present invention, after the wafer level CSP wiring and the first sealing resin are formed, a groove by dicing is formed on the surface of the semiconductor chip, and the groove is filled with the second sealing resin. By dividing into pieces by dicing with a narrower width, it is a simple method, but there is no damage to the surface of the semiconductor chip, and the side surface of the semiconductor circuit forming layer is protected with the second sealing resin, The reliability of the semiconductor device and its mounting body can be improved.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In addition, about the same member as the prior art example mentioned above, the same code | symbol is attached and description is abbreviate | omitted.
(Embodiment 1)
First, the semiconductor device in Embodiment 1 will be specifically described with reference to the drawings.

FIG. 1 is a cross-sectional view illustrating a method for manufacturing a semiconductor device 16 according to the first embodiment of the present invention.
As in the conventional case, the semiconductor wafer 1 has a plurality of semiconductor chips 2 as shown in FIG. Each semiconductor chip 2 has a semiconductor circuit forming layer 2a and a semiconductor electrode 3 on the surface.

  As a manufacturing method of the wafer level CSP, first, the insulating protective film 4 is formed on the surface of the semiconductor circuit forming layer 2a of the semiconductor wafer 1, and the insulating protective film 4 is opened to expose the semiconductor electrode 3 from the insulating protective film 4. . A rewiring 5 for routing the wiring from the semiconductor electrode 3 is formed, a post 6 is formed on the rewiring 5, and the surface of the semiconductor wafer 1 is covered with a first sealing resin 7 for protection. The steps so far are the same as in the prior art.

  Next, as shown in FIG. 1A, dicing is performed between the semiconductor chips 2 from the surface side of the first sealing resin 7, and the first sealing resin 7 is interposed between the semiconductor chips 2. The first groove 14 is formed from the surface side to a depth exceeding the semiconductor circuit forming layer 2a.

After that, as shown in FIG. 1B, the first sealing resin 7 is filled with the second sealing resin 15 from the first sealing resin 7 side, and the surface of the first sealing resin 7 is made second. The sealing resin 15 is covered.
Next, as shown in FIG. 1C, the first and second sealing resins 7 and 15 are ground to expose the ends of the posts 6, and the external electrodes 8 are formed in the exposed portions. Further, the back side of the semiconductor chip 2 (semiconductor wafer 1) is ground to a predetermined thickness.

  Thereafter, as shown in FIG. 1 (d), each semiconductor chip 2 is diced and cut off by a dicing width W1 narrower than that of the first groove 14, and the second sealing resin 15 is removed from the first sealing resin 15. 7 is separated into pieces while remaining on the side surfaces of the semiconductor circuit forming layer 2 a and the side surfaces of the semiconductor chip 2. Thereby, a plurality of semiconductor devices 16 (wafer level CSP) are manufactured.

  According to the manufacturing method as described above, as shown in FIG. 1A, after the surface of the semiconductor wafer 1 is covered with the first sealing resin 7, the first grooves 14 are formed between the semiconductor chips 2. Therefore, the surface of the semiconductor wafer 1 is protected by the first sealing resin 7 when the first groove 14 is formed. Therefore, it is possible to prevent the cutting waste generated at the time of forming the first groove 14 from remaining on the surface of the semiconductor wafer 1 or to prevent the surface of the semiconductor chip 2 from being contaminated by the cutting waste. Further, it is possible to prevent the semiconductor chip 2 from being chipped, thereby preventing the occurrence of defects.

The configuration of the semiconductor device 16 manufactured by the above manufacturing method will be described below.
As shown in FIG. 1D, the semiconductor device 16 includes a semiconductor chip 2 having a semiconductor circuit formation layer 2a on the surface, a semiconductor electrode 3 provided on the surface of the semiconductor circuit formation layer 2a, and a semiconductor circuit formation layer 2a. An insulating protective film 4 (an example of insulating resin) that insulates and protects the surface of the metal, a rewiring 5 electrically connected to the semiconductor electrode 3, a post 6 electrically connected to the rewiring 5, a semiconductor A first sealing resin 7 that protects the surface of the circuit forming layer 2 a, the rewiring 5, and the post 6 is provided.

  Due to the first groove 14, a protruding portion 2 b that protrudes outward is formed on the entire side surface of the semiconductor chip 2. The overhang portion 2b is located at a depth beyond the semiconductor circuit formation layer 2a from the first sealing resin 7 side (the surface side of the semiconductor device 16). The second sealing resin 15 fills the level difference caused by the protruding portion 2b and covers the side surface of the first sealing resin 7, the side surface of the semiconductor circuit forming layer 2a, and the side surface of the semiconductor chip 2 up to the protruding portion 2b. Yes.

  According to this, since the side surface of the first sealing resin 7, the side surface of the semiconductor circuit forming layer 2a, and the side surface of the semiconductor chip 2 are protected by the second sealing resin 15, moisture permeation from the respective side surfaces is prevented. The stress acting on the side surface portion can be mitigated while being prevented. Therefore, peeling or destruction of the semiconductor device 16 can be prevented, and the reliability of the semiconductor device 16 is improved.

  The first sealing resin 7 can be made of a highly reliable material (for example, a high-purity epoxy resin) that is optimal for protecting the surface of the semiconductor chip 2. The stop resin 15 is made of another material that is easy to flow into the first groove 14 and is suitable for relaxing the stress acting on the side surface (for example, the amount of filler filler in the resin is reduced, the filling property into the groove and the low stress Therefore, the semiconductor device 16 can be easily manufactured, and the reliability of the manufactured semiconductor device 16 is improved. . For this reason, the second sealing resin 15 is made of a material having lower viscosity and lower elasticity than the first sealing resin 7.

(Embodiment 2)
Next, the semiconductor device in the second embodiment will be specifically described with reference to the drawings. The second embodiment is characterized in that the entire side surface and the entire back surface of the semiconductor chip are protected with a sealing resin.

FIG. 2 is a cross-sectional view of the semiconductor device 20 according to the second embodiment of the present invention.
As in the first embodiment, the first groove 14 is filled with the second sealing resin 15 as shown in FIG. After covering with the sealing resin 15, the back surface side of the semiconductor chip 2 is ground to a predetermined thickness, and then, as shown in FIG. By dicing from the side opposite to the resin 7 (that is, the back surface side of the semiconductor chip 2), the second groove 17 reaching the second sealing resin 15 in the first groove 14 between the semiconductor chips 2 is obtained. Form.

  However, there is no need to grind the back side of the semiconductor chip 2 if there is no restriction on the thickness. In addition, as shown in FIG. 2A, the width of the second groove 17 is the same as the width of the first groove 14, but it may be wider or narrower than the width of the first groove 14. Good.

  Next, as shown in FIG. 2B, the third sealing resin 18 is filled into the second groove 17 from the side opposite to the first sealing resin 7 (that is, the back surface side of the semiconductor chip 2). The back surface of the semiconductor chip 2 is covered with a third sealing resin 18.

Thereafter, as shown in FIG. 2C, the first and second sealing resins 7 and 15 are ground to expose the ends of the posts 6, and the external electrodes 8 are formed in the exposed portions.
Next, as shown in FIG. 2 (d), dicing is performed by dicing with a dicing width W 1 narrower than the first and second grooves 14 and 17, and the second sealing resin 15 is removed from the first sealing resin 7. The wafer is separated into pieces in the state where the side surface, the side surface of the semiconductor circuit forming layer 2a and the side surface of the semiconductor chip 2 are left and the third sealing resin 18 is left on the side surface and the back surface of the semiconductor chip 2. Thereby, a plurality of semiconductor devices 20 (wafer level CSP) are manufactured.

  According to the manufacturing method as described above, after the surface of the semiconductor wafer 1 is covered with the first sealing resin 7 as shown in FIG. 1A and FIG. Since the first and second grooves 14 and 17 are formed, the surface of the semiconductor wafer 1 is protected by the first sealing resin 7 when the first and second grooves 14 and 17 are formed. Therefore, the cutting waste generated when the first and second grooves 14 and 17 are formed is prevented from remaining on the surface of the semiconductor wafer 1, and the surface of the semiconductor chip 2 is prevented from being contaminated by the cutting waste. In addition, it is possible to prevent the semiconductor chip 2 from being chipped, thereby preventing the occurrence of defects.

The configuration of the semiconductor device 20 manufactured by the above manufacturing method will be described below.
As shown in FIG. 2D, the semiconductor device 20 includes a semiconductor chip 2 having a semiconductor circuit formation layer 2a on the surface, a semiconductor electrode 3 provided on the surface of the semiconductor circuit formation layer 2a, and a semiconductor circuit formation layer 2a. An insulating protective film 4 (an example of insulating resin) that insulates and protects the surface of the metal, a rewiring 5 electrically connected to the semiconductor electrode 3, a post 6 electrically connected to the rewiring 5, a semiconductor A first sealing resin 7 that protects the surface of the circuit forming layer 2 a, the rewiring 5, and the post 6 is provided.

  The second sealing resin 15 covers the side surface of the first sealing resin 7, the side surface of the semiconductor circuit forming layer 2 a, and a part of the side surface of the semiconductor chip 2, and the third sealing resin 18 is formed on the semiconductor chip 2. Cover the rest of the side and the back.

  According to this, since each said side surface is protected by the 2nd and 3rd sealing resin 15 and 18, the water | moisture-content penetration from each said side surface can be prevented, and the stress which acts on a side surface part can be relieve | moderated. Therefore, peeling or destruction of the semiconductor device 20 can be prevented, and the reliability of the semiconductor device 20 is improved. Further, the back surface of the semiconductor chip 2 is protected by the third sealing resin 18.

  The first sealing resin 7 can be made of a highly reliable material (for example, a high-purity epoxy resin) that is optimal for protecting the surface of the semiconductor chip 2. The stop resin 15 is made of another material that is easy to flow into the first groove 14 and is suitable for relieving the stress generated on the side surface (for example, the amount of filler filler in the resin is reduced, and the groove filling property and the stress are reduced. In the same manner, the third sealing resin 18 can easily flow into the second groove 17 and on the side surface. Materials suitable for relieving applied stress (for example, epoxy resin, low elasticity polyimide resin, silicone resin, etc. with reduced filler filler in the resin and increased groove filling and low stress) ) Can be adopted for semiconductor Preparation of location 20 is facilitated, and the reliability of the semiconductor device 20 manufactured can be improved. For this reason, the second and third sealing resins 15 and 18 are made of a material having lower viscosity and lower elasticity than the first sealing resin 7.

(Embodiment 3)
Next, the semiconductor device in Embodiment 3 will be specifically described with reference to the drawings.

The third embodiment is characterized in that the entire side surface of the semiconductor chip is protected with a sealing resin.
Similarly to the first embodiment described above, the second sealing resin 15 is filled in the first groove 14, and the end portion of the post 6 is exposed and exposed as shown in FIG. After the external electrode 8 is formed, the back surface side of the semiconductor chip 2 is ground until it reaches the second sealing resin 15 in the first groove 14 as shown in FIG.

  Thereafter, as shown in FIG. 3B, dicing is performed with a dicing width W1 narrower than that of the first groove 14, and the second sealing resin 15 is formed on the side surface of the first sealing resin 7 and the semiconductor circuit. It separates into pieces while remaining on the side surface of the layer 2a and the side surface of the semiconductor chip 2. Thereby, a plurality of semiconductor devices 22 (wafer level CSP) are manufactured.

  According to this, as shown in FIG. 3B, in the manufactured semiconductor device 22, the second sealing resin 15 includes the side surface of the first sealing resin 7, the side surface of the semiconductor circuit forming layer 2 a, and the semiconductor chip. The entire side surface of 2 is covered and protected. For this reason, moisture permeation from the respective side surfaces can be prevented and stress acting on the side surface portions can be relaxed, and the reliability and reliability of the semiconductor device 22 can be improved by preventing the semiconductor device 22 from peeling and breaking. it can.

(Embodiment 4)
Next, the semiconductor device in the fourth embodiment will be specifically described with reference to the drawings.

  As in the second embodiment, the second sealing member 18 is filled in the second groove 17 and the end of the post 6 is exposed as shown in FIG. After the external electrode 8 is formed, as shown in FIG. 4A, the third sealing resin 18 remaining on the back surface side of the semiconductor chip 2 is ground and removed.

  Next, as shown in FIG. 4B, dicing is performed by dicing with a dicing width W1 narrower than the first and second grooves 14 and 17, and the second sealing resin 15 is removed from the first sealing resin 7. It is separated into pieces in a state where it remains on the side surface, the side surface of the semiconductor circuit forming layer 2 a and the side surface of the semiconductor chip 2 and the third sealing resin 18 remains on the side surface of the semiconductor chip 2. Thereby, a plurality of semiconductor devices 24 (wafer level CSP) are manufactured.

  According to this, as shown in FIG. 4B, in the manufactured semiconductor device 24, the second sealing resin 15 includes the side surface of the first sealing resin 7, the side surface of the semiconductor circuit forming layer 2 a, and the semiconductor chip. The third sealing resin 18 covers and protects the remaining part of the side surface of the semiconductor chip 2. For this reason, moisture permeation from the respective side surfaces can be prevented and stress acting on the side surface portions can be relaxed, and the reliability and reliability of the semiconductor device 24 can be improved by preventing the semiconductor device 24 from peeling or breaking. it can.

(Embodiment 5)
Next, the semiconductor device and its mounting body in the fifth embodiment will be specifically described with reference to the drawings.

  The fifth embodiment is characterized in that the side face of the semiconductor device protected by the sealing resin is stabilized to form the fillet of the underfill resin as a mounting body, the side face is protected, and the protection of the side face of the semiconductor chip is strengthened. .

  As in the first embodiment described above, the first sealing resin 15 is filled in the first groove 14 and the end of the post 6 is exposed as shown in FIG. After the external electrode 8 is formed and the back surface side of the semiconductor chip 2 is ground to a predetermined thickness, as shown in FIG. 5A, the second sealing is performed with a dicing width W2 narrower than the first groove 14. A third groove 26 is formed from the surface side of the stop resin 15 (that is, the first sealing resin 7 side) to a depth exceeding the semiconductor circuit forming layer 2a.

  Next, as shown in FIG. 5B, the second sealing resin 15 is diced and cut off with a dicing width W3 for cutting that is narrower than the third groove 26. It separates into pieces while remaining on the side surface, the side surface of the semiconductor circuit forming layer 2a, and the side surface of the semiconductor chip 2. Thereby, a plurality of semiconductor devices 27 (wafer level CSP) are manufactured.

  According to this, as shown in FIG. 5B, the flow preventing stepped portion 28 protruding outward is formed on the entire side surface of the manufactured semiconductor device 27. The flow stopping step 28 stops the flow of the underfill resin 12 from the post 6 side toward the back surface side of the semiconductor chip 2, and the depth exceeding the semiconductor circuit forming layer 2 a from the first sealing resin 7 side. Is located.

FIG. 6 shows a mounting body 30 in which the semiconductor device 27 is mounted on the mounting substrate 10.
As a manufacturing method of the mounting body 30, first, the external electrode 8 of the semiconductor device 27 is mounted on the mounting substrate 10 by the mounting portion 11, and the external electrode 8 and the mounting substrate 10 are electrically connected. Next, the underfill resin 12 is filled between the semiconductor device 27 and the mounting substrate 10 to form a fillet 12 a around the semiconductor device 27.

  Thereby, the mounting part 11 is protected by the underfill resin 12. Further, since the rising of the fillet 12 a of the underfill resin 12 is stopped by the flow stop step portion 28, the amount of rising of the fillet 12 a at the four corners of the semiconductor device 27 and the rising of the fillet 12 a at the central portion of the semiconductor device 27 are reduced. The amount of rise is almost equal, and variation in the shape of the fillet 12a during mounting can be prevented. As a result, the four corner portions of the semiconductor device 27 are sufficiently protected by the fillet 12a, so that the semiconductor circuit forming layer 2a can be more strongly protected and the reliability of the semiconductor device 27 and its mounting body 30 can be improved. .

(Embodiment 6)
Next, the semiconductor device and its mounting body in the sixth embodiment will be specifically described with reference to the drawings.

  As in the third embodiment, the first groove 14 is filled with the second sealing resin 15, and the back surface side of the semiconductor chip 2 is placed in the first groove 14 as shown in FIG. After grinding until reaching the second sealing resin 15, as shown in FIG. 7A, the dicing width W <b> 2 narrower than the first groove 14 causes the surface side of the second sealing resin 15 (that is, the first sealing resin 15). The third groove 26 is formed from the one sealing resin 7 side) to a depth exceeding the semiconductor circuit forming layer 2a.

  Next, as shown in FIG. 7B, the second sealing resin 15 is diced and cut off with a dicing width W3 for cutting that is narrower than the third groove 26. It separates into pieces while remaining on the side surface, the side surface of the semiconductor circuit forming layer 2a, and the side surface of the semiconductor chip 2. Thereby, a plurality of semiconductor devices 32 (wafer level CSP) are manufactured.

  According to this, as shown in FIG. 7B, the flow stop step portion 28 protruding outward is formed on the entire side surface of the manufactured semiconductor device 32. The flow stopping step 28 stops the flow of the underfill resin 12 from the post 6 side toward the back surface side of the semiconductor chip 2, and the depth exceeding the semiconductor circuit forming layer 2 a from the first sealing resin 7 side. Is located.

  A manufacturing method of a mounting body (not shown) in which the semiconductor device 32 is mounted on the mounting substrate 10 is the same as that of the fifth embodiment, and the mounting body is the same as that of the fifth embodiment. Due to the presence of the stepped portion 28, the amount of rise of the fillet 12a at the four corners of the semiconductor device 32 and the amount of rise of the fillet 12a at the central portion of the semiconductor device 32 become substantially equal, and the shape of the fillet 12a when mounted. Can be prevented.

(Embodiment 7)
Next, the semiconductor device and its mounting body in Embodiment 7 will be specifically described with reference to the drawings.

  As in the second embodiment, the second sealing member 18 is filled in the second groove 17 and the end of the post 6 is exposed as shown in FIG. After forming the external electrode 8, as shown in FIG. 8A, the surface side of the second sealing resin 15 (that is, the first sealing resin 15) is narrowed by the dicing width W 2 narrower than the first and second grooves 14 and 17. The third groove 26 is formed from the sealing resin 7 side) to a depth exceeding the semiconductor circuit forming layer 2a.

  Next, as shown in FIG. 8B, the second sealing resin 15 is diced and cut off with a dicing width W3 for cutting that is narrower than the third groove 26. The wafer is separated into pieces in the state where the side surface, the side surface of the semiconductor circuit forming layer 2a and the side surface of the semiconductor chip 2 are left and the third sealing resin 18 is left on the side surface and the back surface of the semiconductor chip 2. Thereby, a plurality of semiconductor devices 34 (wafer level CSP) are manufactured.

  According to this, as shown in FIG. 8B, the flow preventing stepped portion 28 projecting outward is formed on the entire side surface of the manufactured semiconductor device 34. The flow stopping step 28 stops the flow of the underfill resin 12 from the post 6 side toward the back surface side of the semiconductor chip 2, and the depth exceeding the semiconductor circuit forming layer 2 a from the first sealing resin 7 side. Is located.

  A manufacturing method of a mounting body (not shown) in which the semiconductor device 34 is mounted on the mounting substrate 10 is the same as that of the fifth embodiment, and the mounting body is the same as that of the fifth embodiment. Due to the presence of the stepped portion 28, the amount of rise of the fillet 12a at the four corners of the semiconductor device 34 and the amount of rise of the fillet 12a at the central portion of the semiconductor device 34 are substantially equal, and the shape of the fillet 12a when mounted. Can be prevented.

(Embodiment 8)
Next, a semiconductor device and its mounting body in Embodiment 8 will be specifically described with reference to the drawings.

  As in the above-described fourth embodiment, the third sealing resin 18 is filled in the second groove 17 and the third seal remaining on the back surface side of the semiconductor chip 2 as shown in FIG. After the stop resin 18 is removed by grinding, as shown in FIG. 9A, the dicing width W2 narrower than the first and second grooves 14 and 17 causes the surface side of the second sealing resin 15 (that is, The third groove 26 is formed from the first sealing resin 7 side) to a depth exceeding the semiconductor circuit forming layer 2a.

  Next, as shown in FIG. 9B, the second sealing resin 15 is diced and cut off with a dicing width W3 for cutting that is narrower than the third groove 26, and the second sealing resin 15 is removed from the first sealing resin 7. It is separated into pieces in a state where it remains on the side surface, the side surface of the semiconductor circuit forming layer 2 a and the side surface of the semiconductor chip 2 and the third sealing resin 18 remains on the side surface of the semiconductor chip 2. Thereby, a plurality of semiconductor devices 36 (wafer level CSP) are manufactured.

  According to this, as shown in FIG. 9B, the flow preventing stepped portion 28 protruding outward is formed on the entire side surface of the manufactured semiconductor device 36. The flow stopping step 28 stops the flow of the underfill resin 12 from the post 6 side toward the back surface side of the semiconductor chip 2, and the depth exceeding the semiconductor circuit forming layer 2 a from the first sealing resin 7 side. Is located.

  The manufacturing method of the mounting body (not shown) in which the semiconductor device 36 is mounted on the mounting substrate 10 is the same as that of the fifth embodiment, and the mounting body is the same as that of the fifth embodiment. Due to the presence of the stepped portion 28, the amount of rise of the fillet 12a at the four corners of the semiconductor device 36 and the amount of rise of the fillet 12a at the central portion of the semiconductor device 36 become substantially equal, and the shape of the fillet 12a at the time of mounting. Can be prevented.

(Embodiment 9)
Next, the semiconductor device and its mounting body in Embodiment 9 will be specifically described with reference to the drawings.

  The fifth embodiment is characterized in that the fillet formation of the underfill resin using the side surface of the conventional semiconductor device as a mounting body is stabilized to protect the side surface of the semiconductor device, and the side surface of the semiconductor chip is protected by the underfill resin.

As in the conventional case described above, as shown in FIG. 12B, the post 6 is exposed to form the external electrode 8, and the back side of the semiconductor wafer 1 is ground to a predetermined thickness.
Thereafter, as shown in FIG. 10A, a groove 38 is formed from the surface side of the first sealing resin 7 to a depth exceeding the semiconductor circuit forming layer 2a with a predetermined dicing width W4.

  Next, as shown in FIG. 10B, the wafer is diced and cut into pieces by a dicing width W5 for cutting that is narrower than the groove 38. Thereby, a plurality of semiconductor devices 39 (wafer level CSP) are manufactured.

  According to this, as shown in FIG. 10B, the flow preventing step portion 28 protruding outward is formed on the entire side surface of the manufactured semiconductor device 39. The flow stopping step 28 stops the flow of the underfill resin 12 from the post 6 side toward the back surface side of the semiconductor chip 2, and the depth exceeding the semiconductor circuit forming layer 2 a from the first sealing resin 7 side. Is located.

FIG. 11 shows a mounting body 40 in which the semiconductor device 39 is mounted on the mounting substrate 10.
As a manufacturing method of the mounting body 40, first, the external electrode 8 of the semiconductor device 39 is mounted on the mounting substrate 10 by the mounting portion 11, and the external electrode 8 and the mounting substrate 10 are electrically connected. Next, the underfill resin 12 is filled between the semiconductor device 39 and the mounting substrate 10 to form a fillet 12 a around the semiconductor device 39.

  Thereby, the mounting part 11 is protected by the underfill resin 12. Further, since the rising of the fillet 12 a of the underfill resin 12 is stopped by the flow stop step portion 28, the amount of rising of the fillet 12 a at the four corners of the semiconductor device 39 and the rising of the fillet 12 a at the central portion of the semiconductor device 39. The amount of rise is almost equal, and variation in the shape of the fillet 12a during mounting can be prevented. As a result, the four corners of the semiconductor device 39 are sufficiently protected by the fillet 12a, so that the semiconductor circuit formation layer 2a can be more strongly protected and the reliability of the semiconductor device 39 and its mounting body 40 can be improved. .

  Although the present invention is a simple construction method, it has a structure for protecting the side surface of a semiconductor chip, can improve reliability even when a semiconductor device is mounted on a mounting substrate and a further stress is applied to the wafer, Useful for level CSPs and their implementations.

The figure which shows the manufacturing method of the semiconductor device in Embodiment 1 of this invention. The figure which shows the manufacturing method of the semiconductor device in Embodiment 2 of this invention. The figure which shows the manufacturing method of the semiconductor device in Embodiment 3 of this invention. The figure which shows the manufacturing method of the semiconductor device in Embodiment 4 of this invention. The figure which shows the manufacturing method of the semiconductor device in Embodiment 5 of this invention. Figure of mounting body with semiconductor device mounted The figure which shows the manufacturing method of the semiconductor device in Embodiment 6 of this invention. The figure which shows the manufacturing method of the semiconductor device in Embodiment 7 of this invention. The figure which shows the manufacturing method of the semiconductor device in Embodiment 8 of this invention. The figure which shows the manufacturing method of the semiconductor device in Embodiment 9 of this invention. Figure of mounting body with semiconductor device mounted The figure which shows the manufacturing method of the conventional semiconductor device Figure of mounting body with semiconductor device mounted

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor wafer 2 Semiconductor chip 2a Semiconductor circuit formation layer 2b Overhang | projection part 3 Semiconductor electrode 4 Insulation protective film (insulation resin)
5 Rewiring 6 Post 7 First Sealing Resin 8 External Electrode 10 Mounting Substrate 11 Mounting Part 12 Underfill Resin 12a Fillet 14 First Groove 15 Second Sealing Resin 16 Semiconductor Device 17 Second Groove 18 Third 20, 22, 24, 27, 32, 34, 36, 39 Semiconductor device 26 Third groove 28 Step portion 30 for preventing flow 30, 40 Mounting body W1 to W3 Dicing width

Claims (7)

A semiconductor chip having a semiconductor circuit forming layer on the surface;
A semiconductor electrode provided on a surface of the semiconductor chip,
An insulating resin to protect and insulate the surface of the semiconductor chip,
Rewiring electrically connected to the semiconductor electrode;
A post which is connected to the redistribution electrically,
And a first sealing resin for protecting the said post and the surface and the rewiring of the semiconductor chip,
The second sealing resin covers the side surface of the first sealing resin, the side surface of the semiconductor circuit forming layer, and a part of the side surface of the semiconductor chip, and the third sealing resin covers the side surface of the semiconductor chip. Cover the rest,
The length of the portion covered with the second sealing resin on the side surface of the semiconductor chip and the side surface of the first sealing resin is covered with the third sealing resin on the side surface of the semiconductor chip. Longer than the length of the part
The semiconductor device characterized in that the second sealing resin and the third sealing resin have lower viscosity and lower elasticity than the first sealing resin . The semiconductor device according to claim 1, wherein the third sealing resin covers a back surface of the semiconductor chip . On the side surface of the semiconductor chip, there is formed a flow stop stepped portion that protrudes outward and stops the flow of underfill resin from the post side toward the back surface side of the semiconductor chip,
The flow stopping step is located at a depth beyond the semiconductor circuit forming layer from the first sealing resin side,
3. The semiconductor device according to claim 1, wherein the step portion for preventing flow is formed at an interface between the second sealing resin and the third sealing resin. 4. . A mounting body in which the semiconductor device according to claim 3 is mounted on a mounting board,
External electrodes are provided on the posts of the semiconductor device,
The external electrode and the mounting substrate are electrically connected,
Underfill resin is filled between the semiconductor device and the mounting substrate to protect the mounting portion,
A mount for a semiconductor device, wherein a fillet of the underfill resin reaches the step portion for preventing flow. A method of manufacturing a semiconductor device by dicing a semiconductor wafer having a plurality of semiconductor chips each having a semiconductor circuit forming layer on a surface,
A step of covering the surface of a semiconductor wafer having a plurality of semiconductor chips with a first sealing resin;
Forming a first groove between the semiconductor chips from the first sealing resin side to a depth exceeding the semiconductor circuit forming layer by dicing between the semiconductor chips from the first sealing resin side; When,
Filling the first groove with the second sealing resin from the first sealing resin side;
A second groove reaching the second sealing resin in the first groove between the semiconductor chips by dicing between the semiconductor chips from the side opposite to the first sealing resin. Forming a step;
Filling the second groove with the third sealing resin from the side opposite to the first sealing resin;
Dicing with a dicing width narrower than the first and second grooves, the second sealing resin is divided into a side surface of the first sealing resin, a side surface of the semiconductor circuit forming layer, and a side surface of the semiconductor chip. In a state where the third sealing resin is left and left on the side surface and the back surface of the semiconductor chip,
The length of the portion covered with the second sealing resin on the side surface of the semiconductor chip and the side surface of the first sealing resin is covered with the third sealing resin on the side surface of the semiconductor chip. Longer than the length of the part
The method for manufacturing a semiconductor device, wherein the second sealing resin and the third sealing resin are lower in viscosity and lower in elasticity than the first sealing resin. After the step of filling the second groove with the third sealing resin, performing the step of grinding and removing the third sealing resin remaining on the back surface side of the semiconductor chip,
6. The method of manufacturing a semiconductor device according to claim 5, wherein the step of dicing is performed by dicing in a state where the third sealing resin is left on the side surface of the semiconductor chip. After the step of filling the second groove with the third sealing resin, the dicing width narrower than the first and second grooves exceeds the semiconductor circuit formation layer from the second sealing resin side. Perform the process of forming the third groove to the depth,
7. The method of manufacturing a semiconductor device according to claim 5, wherein a step of dicing with a dicing width narrower than that of the third groove is performed.

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