JP4793618B2 - Cmosイメージセンサ構造体及びこれを用いたカメラモジュールを製作する為のプロセス - Google Patents
Cmosイメージセンサ構造体及びこれを用いたカメラモジュールを製作する為のプロセス Download PDFInfo
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- JP4793618B2 JP4793618B2 JP2003293248A JP2003293248A JP4793618B2 JP 4793618 B2 JP4793618 B2 JP 4793618B2 JP 2003293248 A JP2003293248 A JP 2003293248A JP 2003293248 A JP2003293248 A JP 2003293248A JP 4793618 B2 JP4793618 B2 JP 4793618B2
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- 238000000034 method Methods 0.000 title claims description 34
- 238000004519 manufacturing process Methods 0.000 title description 21
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- 239000000758 substrate Substances 0.000 claims description 6
- 238000000206 photolithography Methods 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 description 15
- 238000000576 coating method Methods 0.000 description 9
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- 238000012545 processing Methods 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
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- 238000003384 imaging method Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 230000008901 benefit Effects 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 229920001690 polydopamine Polymers 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
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- 230000000903 blocking effect Effects 0.000 description 2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/64—Heating using microwaves
- H05B6/80—Apparatus for specific applications
- H05B6/806—Apparatus for specific applications for laboratory use
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
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- Health & Medical Sciences (AREA)
- Clinical Laboratory Science (AREA)
- General Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Lens Barrels (AREA)
Description
120 画素センサ
130、230 マイクロレンズ
135 ギャップ
140 支持部
150 スペーサープレート
160 屈折率勾配レンズ
Claims (9)
- 基板中及び基板上に形成された画素センサのアレイと、
該基板に取り付けられ、該画素センサのアレイ上に横たわるスペーサープレートと、
該スペーサープレート上にあり、前記スペーサープレート上の材料層に対するフォトリソグラフィによって前記画素センサのアレイの平面上に全体にわたって画像を形成するように配置されたファーフィールド・レンズとしての屈折率勾配レンズとを含んでなる構造体。 - 前記画素センサのアレイと前記スペーサープレートとの間にマイクロレンズアレイを更に含む請求項1に記載の構造体。
- 前記マイクロレンズアレイが屈折率勾配レンズのアレイを含み、前記スペーサープレートが前記屈折率勾配レンズのアレイに取り付けられている請求項2に記載の構造体。
- 前記画素センサのアレイ及び前記マイクロレンズアレイを取り囲む支持部を更に含み、
前記スペーサープレートが該支持部に取り付けられていることによって前記マイクロレンズアレイと前記スペーサープレートとの間に間隙が設けられている請求項2に記載の構造体。 - 前記基板が画素センサの複数のアレイを含むウエハであり、前記スペーサープレートが前記複数のアレイにわたって伸びている請求項1から4のいずれかに記載の構造体。
- 画素センサの複数のアレイをウエハ上に形成するステップと、
前記画素センサのアレイ上で、前記ウエハにスペーサープレートを取り付けるステップと、
前記ウエハの切断に先立って前記画素センサの複数の前記アレイの各々に対応するように前記スペーサープレート上の材料層に対するフォトリソグラフィによって前記スペーサープレート上に複数の屈折率勾配レンズを形成するステップであって、該屈折率勾配レンズの各々が、前記画素センサのアレイの1つに対応し前記画素センサのアレイ上にあり、前記画素センサのアレイの平面上に対応する領域にわたる画像を形成するファーフィールド・レンズであるステップと、
前記ウエハを切断して、1つの前記画素センサのアレイと1つの前記屈折率勾配レンズとを含む各カメラモジュールに分離するステップとを含んでなる、カメラモジュールを製作する方法。 - 前記画素センサの前記複数のアレイを前記ウエハ上に形成する前記ステップの後に、前記画素センサの前記複数のアレイの上にマイクロレンズのアレイを複数形成するステップを更に含み、該マイクロレンズが対応する画素センサ上へと光を収束するものである請求項6に記載の方法。
- 前記スペーサープレートを取り付けるステップが、前記スペーサープレートを前記マイクロレンズのアレイを構成する屈折率勾配レンズに取り付けるものである請求項7に記載の方法。
- 複数の支持部を形成するステップを更に含み、該支持部の各々が、マイクロレンズアレイの対応する1つを取り囲んでおり、前記スペーサープレートを取り付けるステップが、
前記スペーサープレートを前記支持部に取り付けることによって前記マイクロレンズアレイと前記スペーサープレートとの間に間隙が設けられるものである請求項7に記載の方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US40341102P | 2002-08-13 | 2002-08-13 | |
US60/403411 | 2002-08-13 | ||
US10/260,186 US7414661B2 (en) | 2002-08-13 | 2002-09-27 | CMOS image sensor using gradient index chip scale lenses |
US10/260186 | 2002-09-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004080039A JP2004080039A (ja) | 2004-03-11 |
JP4793618B2 true JP4793618B2 (ja) | 2011-10-12 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2003293248A Expired - Fee Related JP4793618B2 (ja) | 2002-08-13 | 2003-08-13 | Cmosイメージセンサ構造体及びこれを用いたカメラモジュールを製作する為のプロセス |
Country Status (4)
Country | Link |
---|---|
US (2) | US7414661B2 (ja) |
EP (1) | EP1389804B1 (ja) |
JP (1) | JP4793618B2 (ja) |
DE (1) | DE60335591D1 (ja) |
Cited By (1)
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JP2005347416A (ja) * | 2004-06-01 | 2005-12-15 | Sharp Corp | 固体撮像装置、半導体ウエハ及びカメラモジュール |
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-
2003
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- 2003-04-04 EP EP03007806A patent/EP1389804B1/en not_active Expired - Lifetime
- 2003-08-13 JP JP2003293248A patent/JP4793618B2/ja not_active Expired - Fee Related
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2008
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Publication number | Publication date |
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JP2004080039A (ja) | 2004-03-11 |
US7683961B2 (en) | 2010-03-23 |
US7414661B2 (en) | 2008-08-19 |
EP1389804A3 (en) | 2006-01-11 |
US20040032523A1 (en) | 2004-02-19 |
EP1389804B1 (en) | 2011-01-05 |
DE60335591D1 (de) | 2011-02-17 |
US20080283730A1 (en) | 2008-11-20 |
EP1389804A2 (en) | 2004-02-18 |
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