JP4776380B2 - 処理装置及び処理方法 - Google Patents
処理装置及び処理方法 Download PDFInfo
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- JP4776380B2 JP4776380B2 JP2006012759A JP2006012759A JP4776380B2 JP 4776380 B2 JP4776380 B2 JP 4776380B2 JP 2006012759 A JP2006012759 A JP 2006012759A JP 2006012759 A JP2006012759 A JP 2006012759A JP 4776380 B2 JP4776380 B2 JP 4776380B2
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- 238000003672 processing method Methods 0.000 title claims description 9
- 238000011144 upstream manufacturing Methods 0.000 claims description 51
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 43
- 238000005192 partition Methods 0.000 claims description 22
- 239000007788 liquid Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 11
- 238000007599 discharging Methods 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 18
- 239000000758 substrate Substances 0.000 description 14
- 238000005259 measurement Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000008155 medical solution Substances 0.000 description 3
- 239000003595 mist Substances 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 238000003303 reheating Methods 0.000 description 3
- 238000009529 body temperature measurement Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
- B08B3/022—Cleaning travelling work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B5/00—Cleaning by methods involving the use of air flow or gas flow
- B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
- B08B5/023—Cleaning travelling work
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/28—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material
- C03C17/32—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material with synthetic or natural resins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/26—Cleaning or polishing of the conductive pattern
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/32—After-treatment
- C03C2218/328—Partly or completely removing a coating
- C03C2218/33—Partly or completely removing a coating by etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0736—Methods for applying liquids, e.g. spraying
- H05K2203/075—Global treatment of printed circuits by fluid spraying, e.g. cleaning a conductive pattern using nozzles
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/15—Position of the PCB during processing
- H05K2203/1509—Horizontally held PCB
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
図2は、図1に表される処理室1への処理液供給系統の概略図である。
第1のノズル5は、バー状に延在し、その下端部には、第1のノズル5の延在方向に沿うスリット状の吐出口5aが形成されている。
具体的には、図5に表す角度θを様々に変えて、移動方向Aの上流側のA点と、下流側のB点それぞれの温度を測定した。ここで、角度θは、被処理体10の移動方向Aと、第1のノズル5の吐出方向とがなす角度を表す。第1のノズル5の吐出方向が被処理体10に対して垂直のときは、角度θは90°になる。
図6において、横軸は、第1のノズル5の角度θを表し、縦軸は、上流側A点と下流側B点それぞれの測定温度を表す。
Claims (10)
- 被処理体を処理する処理室と、
前記処理室内で前記被処理体を移動させる移動手段と、
処理液の吐出口が前記被処理体の移動路に対向させて設けられ、かつ前記吐出口からの前記処理液の吐出方向が、前記被処理体の移動方向に対して垂直な方向よりも前記移動方向の上流側に対して向けられる第1のノズルと、
前記処理室内における前記移動路の上方の空間を、前記第1のノズルの位置を境に、前記移動方向の上流側の空間と、前記移動方向の下流側の空間とに仕切る仕切部材と、
前記処理室を囲む壁部における前記移動路の上方で前記下流側の空間に面する部分に形成され、前記下流側の空間に連通する吸気口と、
前記壁部における前記移動路の上方で前記上流側の空間に面し、前記仕切部材よりも上流側の側面部に形成され、前記上流側の空間に連通する排気口と、
を備えたことを特徴とする処理装置。 - 前記第1のノズルよりも前記移動方向の下流側における前記下流側の空間で、吐出口を前記移動路に対向させて設けられ、温水を吐出する第2のノズルを備えたことを特徴とする請求項1記載の処理装置。
- 前記移動手段は、前記被処理体を支持した状態で回転可能な搬送ローラを有し、
前記搬送ローラを挟んで前記移動路の反対側に設けられ、吐出口を前記搬送ローラに対向させ、温水を吐出する第3のノズルを備えたことを特徴とする請求項1または2に記載の処理装置。 - 前記処理室の内壁面に吐出口を対向させて設けられ、温水を吐出する第4のノズルを備えたことを特徴とする請求項1〜3のいずれか1つに記載の処理装置。
- 前記被処理体の前記移動方向と、前記第1のノズルの吐出方向とがなす角度θは、15〜75°であることを特徴とする請求項1〜4のいずれか1つに記載の処理装置。
- 前記角度θは、略45°であることを特徴とする請求項5記載の処理装置。
- 前記第1のノズルは、前記上流側の空間と、前記下流側の空間とを仕切る方向に延在していることを特徴とする請求項1〜6のいずれか1つに記載の処理装置。
- 処理室内で移動する被処理体に対して、ノズルから処理液を吐出して前記被処理体を処理する処理方法であって、
前記処理室内における前記被処理体の移動路の上方の空間が、前記ノズルの位置を境に、前記移動方向の上流側の空間と、前記移動方向の下流側の空間とに仕切られ、かつ、前記処理室を囲む壁部における前記移動路の上方で前記下流側の空間に面する部分に形成され、前記下流側の空間に連通する吸気口と、前記壁部における前記移動路の上方で前記上流側の空間に面し、前記上流側の空間と前記下流側の空間とを仕切る仕切部材よりも上流側の側面部に形成され、前記上流側の空間に連通する排気口とを通じて、前記下流側の空間から前記上流側の空間に向かう気流が形成された状態で、前記ノズルの吐出方向を、前記移動方向に対して垂直な方向よりも前記移動方向の上流側に対して向けて、前記処理液を前記被処理体に対して吐出することを特徴とする処理方法。 - 前記ノズルから、前記処理液として水蒸気を吐出することを特徴とする請求項8記載の処理方法。
- 前記ノズルからの前記処理液の吐出流量よりも、前記上流側の空間からの排気量を大きくすることを特徴とする請求項8または9に記載の処理方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006012759A JP4776380B2 (ja) | 2006-01-20 | 2006-01-20 | 処理装置及び処理方法 |
US11/625,026 US20070246085A1 (en) | 2006-01-20 | 2007-01-19 | Apparatus and method for photoresist removal processing |
KR1020070006080A KR100809517B1 (ko) | 2006-01-20 | 2007-01-19 | 포토레지스트 제거 처리 장치 및 방법 |
TW096102246A TWI326620B (en) | 2006-01-20 | 2007-01-19 | Apparatus and method for photoresist removal processing |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006012759A JP4776380B2 (ja) | 2006-01-20 | 2006-01-20 | 処理装置及び処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007194490A JP2007194490A (ja) | 2007-08-02 |
JP4776380B2 true JP4776380B2 (ja) | 2011-09-21 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2006012759A Active JP4776380B2 (ja) | 2006-01-20 | 2006-01-20 | 処理装置及び処理方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20070246085A1 (ja) |
JP (1) | JP4776380B2 (ja) |
KR (1) | KR100809517B1 (ja) |
TW (1) | TWI326620B (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007063202A1 (de) * | 2007-12-19 | 2009-06-25 | Gebr. Schmid Gmbh & Co. | Verfahren und Vorrichtung zur Behandlung von Silizium-Wafern |
WO2009139056A1 (ja) * | 2008-05-14 | 2009-11-19 | アクアサイエンス株式会社 | 対象物洗浄方法及び対象物洗浄システム |
DE102011109568A1 (de) * | 2011-08-05 | 2013-02-07 | Rena Gmbh | Abluftsystem und Verfahren dazu |
DE102011118441B8 (de) * | 2011-11-12 | 2018-10-04 | RENA Technologies GmbH | Anlage und Verfahren zur Behandlung von flachen Substraten |
JP6287130B2 (ja) * | 2013-11-29 | 2018-03-07 | 富士通株式会社 | 洗浄装置 |
KR102338076B1 (ko) * | 2014-10-06 | 2021-12-13 | 삼성디스플레이 주식회사 | 기판 처리 장치 및 이를 이용한 기판 처리 방법 |
CN104550157B (zh) * | 2014-12-24 | 2016-08-17 | 深圳市华星光电技术有限公司 | 清洗装置 |
CN104773567B (zh) * | 2015-03-06 | 2017-11-10 | 吴小江 | 一种制鞋用布料烘干除尘设备 |
WO2017164126A1 (ja) * | 2016-03-25 | 2017-09-28 | 東レ株式会社 | 現像装置及び回路基板の製造方法 |
CN109719084B (zh) * | 2018-12-26 | 2021-03-19 | 潍坊歌尔微电子有限公司 | 吹气除尘工装及mems芯片除尘方法 |
KR102274002B1 (ko) * | 2019-04-05 | 2021-07-08 | (주) 나인테크 | 스팀 장치 및 이를 포함하는 세정 시스템 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4479849A (en) * | 1980-09-25 | 1984-10-30 | Koltron Corporation | Etchant removal apparatus and process |
US5107873A (en) * | 1989-08-08 | 1992-04-28 | Halliburton Company | Chamber cleaning apparatus and method |
JP3526692B2 (ja) * | 1995-07-21 | 2004-05-17 | 大日本スクリーン製造株式会社 | 基板の液切り装置 |
US5762749A (en) * | 1995-07-21 | 1998-06-09 | Dainippon Screen Mfg. Co., Ltd. | Apparatus for removing liquid from substrates |
JP2001250773A (ja) * | 1999-08-12 | 2001-09-14 | Uct Kk | レジスト膜除去装置及びレジスト膜除去方法 |
JP2002148818A (ja) * | 2000-11-15 | 2002-05-22 | Fuji Photo Film Co Ltd | 薬液処理装置及び方法 |
JP2002169304A (ja) * | 2000-12-01 | 2002-06-14 | Dainippon Screen Mfg Co Ltd | 剥離装置及びレジスト膜の剥離方法 |
JP4056858B2 (ja) * | 2001-11-12 | 2008-03-05 | 東京エレクトロン株式会社 | 基板処理装置 |
JP2005072058A (ja) * | 2003-08-27 | 2005-03-17 | Sharp Corp | 洗浄装置および洗浄方法 |
JP2005230723A (ja) * | 2004-02-20 | 2005-09-02 | Shimada Phys & Chem Ind Co Ltd | 基板処理装置及びそれに用いる洗浄槽並びに乾燥槽 |
DE102004017680B4 (de) * | 2004-04-10 | 2008-01-24 | Forschungszentrum Jülich GmbH | Verfahren zur Behandlung von Substraten mit vorstrukturierten Zinkoxidschichten |
JP2007009417A (ja) * | 2005-06-28 | 2007-01-18 | Masaru Fujimatsu | 木造建築物の軸組構造 |
-
2006
- 2006-01-20 JP JP2006012759A patent/JP4776380B2/ja active Active
-
2007
- 2007-01-19 US US11/625,026 patent/US20070246085A1/en not_active Abandoned
- 2007-01-19 TW TW096102246A patent/TWI326620B/zh active
- 2007-01-19 KR KR1020070006080A patent/KR100809517B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
TWI326620B (en) | 2010-07-01 |
KR20070077122A (ko) | 2007-07-25 |
TW200740535A (en) | 2007-11-01 |
JP2007194490A (ja) | 2007-08-02 |
US20070246085A1 (en) | 2007-10-25 |
KR100809517B1 (ko) | 2008-03-04 |
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