JP4761779B2 - ID labels, ID cards, ID tags, and articles - Google Patents

Description

  The present invention has a memory, a microprocessor (central processing unit, CPU, MPU), etc., is mounted with a very thin thin film integrated circuit, and an ID label for identifying humans, animals, plants, products, etc. It relates to cards and ID tags.

  In recent years, in various industries such as the food industry and the manufacturing industry, there is an increasing demand for the enhancement of product safety and management systems, and the amount of information related to products is increasing accordingly. However, the current product information is mainly about information such as a manufacturing country, a manufacturer, a product number, etc. provided by a ten-digit number of a barcode, and the amount of information is very small. Also, when using barcodes, it took time to read each item manually. Therefore, an automatic recognition technique using a non-contact IC tag using electromagnetic waves called RFID (Radio Frequency Identification) instead of a bar code system has attracted attention.

  In addition, in order to ensure the safety of animals and plants (eg, origin, presence or absence of infectious disease infection), an IC chip is directly embedded in the body of animals and plants, and information on animals and plants is acquired by an external information reader (reader). The management system is spreading.

  In recent years, the number of cards carried per person is increasing, and among them, contactless IC cards that perform communication using electromagnetic fields are becoming popular in the form of electronic tickets and electronic money.

  In addition, when counterfeiting or theft of banknotes, coins, securities, tickets, etc., in order to prevent duplication and misuse, a technique of embedding IC chips inside them is becoming widespread (above) Non-Patent Document 1).

Nikkei Electronics Nikkei Business Publications, Inc. 2002.1.18 p. 67-76

  However, as non-contact and contact IC chips become widespread, it is necessary to manufacture a large number of IC chips that can be used for a large number of people, animals and plants, commodities, banknotes, and the like at a very low cost. For example, IC chips attached to products, banknotes, etc., must be manufactured at a cost of 1 to several yen, preferably less than 1 yen, and are integrated like IC chips that can be mass-produced at low cost. Realization of the structure and process of a circuit device is required.

  At present, in manufacturing an IC chip, a method is used in which a plurality of thin film integrated circuits are formed on a silicon wafer and the thin film integrated circuits are separated by polishing and removing the silicon wafer (called back grinding). Yes. However, although silicon wafers are expensive, they are all polished and removed, so an increase in manufacturing cost cannot be avoided. Further, since an integrated circuit made of a silicon wafer is thick, when it is mounted on a product container itself, the surface has irregularities, and the range of design selection is limited.

  The present invention has been made in view of such a situation, and can be mass-produced at a low cost. Unlike an integrated circuit formed using a conventional silicon wafer, the present invention is very thin. Provided is a structure and process of an integrated circuit device (hereinafter referred to as a thin film integrated circuit device), and a structure and process of various articles such as an ID label, an ID card, an ID tag, a bill, and a coin using the thin film integrated circuit device. The purpose is that.

(1) An ID label according to the present invention is characterized by having a thin film integrated circuit device including a thin film transistor, an adhesive layer, and a separator provided in contact with a label substrate on which an antenna is formed.

(2) An ID label according to the present invention has a label base, a thin film integrated circuit device including a thin film transistor provided in contact with an internal base on which an antenna is formed, an adhesive layer, and a separator. Yes.

(3) An ID card according to the present invention includes a thin film integrated circuit device including a thin film transistor provided in contact with a card substrate on which an antenna is formed, and at least an antenna and a thin film integrated circuit device among the card substrates. It is characterized by having a cover covering the other side.

(4) An ID card according to the present invention is characterized by having a thin film integrated circuit device including a thin film transistor provided in contact with an internal substrate on which an antenna is formed, and a cover covering the periphery of the substrate.

(5) An ID tag according to the present invention includes a thin film integrated circuit device including a thin film transistor provided in contact with a substrate on which an antenna is formed, and a side of the substrate on which at least the antenna and the thin film integrated circuit device are formed. It has a cover for covering.

(6) An ID tag according to the present invention is characterized by having a thin film integrated circuit device including a thin film transistor provided in contact with an internal substrate on which an antenna is formed, and a cover covering the periphery of the internal substrate.

  The thin film integrated circuit devices included in the ID label, the ID card, and the ID tag according to the above invention each include a thin film active element such as a thin film transistor (TFT). For example, in the case of manufacturing a thin film integrated circuit device using a TFT, after the TFT is formed on a substrate to be peeled, the substrate to be peeled is peeled and element separation is performed, so that a thin film integrated circuit device made of TFT can be manufactured in large quantities at low cost It can be produced. The peeling method referred to here is roughly divided into chemical peeling for removing the peeling layer by etching or the like and physical peeling for separating the peeling layer by applying pressure from the outside, but is not limited thereto. .

  In addition, the thin film integrated circuit device is a concept that is distinguished from an “IC (Integrated Circuit) chip” formed on a conventional silicon wafer, and is represented by a TFT (Thin Film Transistor). Connect the thin film active element and the wiring connecting the thin film active elements, and the thin film active element and an external mechanism (for example, an antenna for a non-contact type ID label and a connection terminal for a contact type ID label). An integrated circuit device composed of wiring or the like. Needless to say, the constituent elements of the thin film integrated circuit device are not limited to this, and are thin film integrated circuits if they include at least one thin film active element typified by a TFT.

  The thin film integrated circuit device used in the present invention is called an IDT chip (Identification Thin Chip) because it is a thin film unlike a conventional IC chip. Further, as will be described later, the thin film integrated circuit device used in the present invention does not use a silicon wafer in principle but uses an insulating substrate such as a glass substrate or a quartz substrate, and transfers the thin film integrated circuit device to a flexible substrate. Therefore, it is also called an IDG chip (Identification Glass Chip), an IDF chip (Identification Flexible Chip), a soft chip (Soft Chip), or the like. Hereinafter, the thin film integrated circuit device may be replaced with an IDF chip or the like.

  Here, the ID label (Identification Label) mainly has a function of identifying products distributed in the market and storing information related thereto, and is also called an ID sticker, an ID sticker, or the like. Basically, one surface of the ID label is an adhesive surface, which can be arbitrarily attached to a product or the like, and includes one having a function capable of re-adhesion multiple times. Of course, as long as it belongs to a category such as a label, a seal, a sticker, a label, a sign, etc., it is not limited to these.

  The label substrate refers to a portion that is actually attached to a product or the like, and an antenna and a thin film integrated circuit device are formed on the front surface, the back surface, or both. The label substrate may have a single layer structure or a laminated structure.

  The internal substrate refers to a portion formed separately from the ID label, ID card, and ID tag label substrate and formed inside the substrate. Also called an inlet base. Basically, it cannot be visually recognized from the outside, but in the case where the substrate is formed of a transparent body, it includes those that can be visually recognized from the outside. The internal substrate may also have a single layer structure or a laminated structure.

  An ID card refers to a card having a minute integrated circuit device capable of storing various information, such as a cash card, credit card, prepaid card, electronic ticket, electronic money, telephone card, membership card, etc. Means any card.

  Further, the ID tag has a function of identifying merchandise mainly distributed in the market and storing information related to the ID tag, like the ID label. Product management is facilitated by providing the product with an ID label or ID tag. For example, when a product is stolen, the culprit can be quickly grasped by following the route of the product. In this way, by providing an ID tag, when a problem occurs at each stage of so-called traceability (complicated manufacturing and distribution), a system is established to quickly grasp the cause by tracing the route. )) Can be distributed. In addition, as the number of incidents such as violent crimes and missing persons increases, in order to recognize individuals in order to keep track of whereabouts of individuals such as infants, children, elderly people and travelers, etc., at all times, and to reduce the possibility of being involved in an accident. It is also possible to use an ID tag.

  The cover covers at least the side of the base of the card or tag on which the antenna and the thin film integrated circuit device are formed, and is provided to face the base. Of course, the substrate may be different from the substrate on which the thin film integrated circuit device is formed, and the material thereof may be the same as or different from the substrate on which the thin film integrated circuit device is formed. It may also serve as a coating.

  The scope to which the present invention is applied is not limited to the ID label, ID card, ID tag, and the like. A thin film integrated circuit device including a thin film transistor provided in contact with a substrate on which an antenna is formed, and a cover that covers at least a side of the substrate on which the antenna and the thin film integrated circuit device are formed. Any article can be the subject of the present invention.

  Alternatively, an article according to the present invention is characterized by having a thin film integrated circuit device including a thin film transistor provided in contact with an internal substrate on which an antenna is formed, and a cover that covers the periphery of the internal substrate. May be.

  Further, it is desirable that a protective layer made of a single layer or a laminate containing silicon oxide, silicon nitride, or silicon oxynitride is formed on at least one of the upper and lower sides of the thin film integrated circuit device included in these articles.

  Since the integrated circuit device incorporated in the article according to the present invention is a thin film integrated circuit device including a TFT, it can have a thickness of about 5 μm or less (more preferably, 0.1 μm to 3 μm). The present invention plays a significant role for paper-like, film-like and plate-like articles.

  The thin film integrated circuit device included in the ID label, ID card, and ID tag according to the present invention is characterized by including a thin film active element such as a TFT. Therefore, after forming the TFT on the substrate to be peeled, Thin film integrated circuit devices can be mass-produced at a low cost by a method such as peeling a peeling substrate and separating elements. In addition, since the thin film active element is used, a thinner ID label, ID card, and ID tag can be obtained as compared with the conventional case.

  Further, unlike the conventional IC chip formed on the silicon substrate, it is not necessary to perform back surface polishing, the process can be greatly simplified, and the manufacturing cost can be greatly reduced. Further, as the substrate to be peeled, a glass substrate, a quartz substrate, a solar cell grade silicon substrate (solar cell grade silicon substrate) or the like that is less expensive than a silicon substrate can be used, and further, the peeled substrate can be reused. Therefore, the cost can be greatly reduced.

  In addition, it is not necessary to perform back grinding processing that causes cracks and polishing marks, as in the case of ICs manufactured from silicon wafers, and variations in the thickness of the element are also caused when the films constituting the IC are formed. Therefore, it is about several hundreds of nanometers at most, and can be remarkably reduced as compared with the variation of several to several tens of micrometers due to the back grinding process.

  Therefore, according to the present invention, it is possible to provide various articles such as an ID label, an ID card, and an ID tag that can be mass-produced at low cost, are thinner, and have superior functionality.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the present invention can be implemented in many different modes, and various changes can be made in form and details without departing from the spirit and scope of the present invention. For example, the present invention can be implemented by appropriately combining each of the present embodiment and this example. Therefore, the present invention is not construed as being limited to the description of this embodiment mode.

(Embodiment 1)
The structure and manufacturing method of the ID label according to the present invention will be described mainly with reference to FIGS. FIG. 1A is a perspective view showing a laminated structure of an ID label 20 according to the present invention. Here, for convenience, a label base (generally referred to as “tack paper” or the like, but not limited to a paper material) to be attached to a product or the like is shown below, and a separator serving as a label mount is shown above.

  In FIG. 1A, an antenna 11 and a connection pad 12 that is a connecting portion between the antenna and a thin film integrated circuit device are formed in advance on a label substrate 10, and the thin film integrated circuit device 13 formed separately is labeled substrate. This shows the case of pasting on the screen. On the surface of the label substrate (the back side in the figure), prints 14 such as characters, symbols, and drawings are applied as necessary. Further, when a so-called hybrid type ID label having both a non-contact type and a contact type function is desired, a wiring pattern constituting the connection terminal may be formed by a printing method or the like.

  The label substrate 10 on which the antenna and the thin film integrated circuit device are formed is attached to the separator 16 through the adhesive layer 15. A coating layer 17 may be formed on the surface of the label substrate 10. Although not shown, a coating layer may be provided between the label substrate and the adhesive layer.

  Here, as the label substrate, typically, resin materials such as paper, synthetic paper, plastic, PET, polypropylene, polyethylene, polystyrene, and nylon, inorganic materials, and the like can be used, but the label substrate is not limited thereto. is not. In order to allow the ID label to be applied not only to products having a flat shape but also to products having various shapes, it is desirable to use a flexible material having flexibility for the label substrate. In addition, as a resin material, the high density polyethylene (HDPE) etc. which were described in Unexamined-Japanese-Patent No. 2001-30403 can also be used, for example. Two or more of the above materials may be used in combination.

  In addition, as a conductive material used for the antenna and the connection pad, Ag, Au, Al, Cu, Zn, Sn, Ni, Cr, Fe, Co, or Ti, or an alloy containing them can be used. Of course, although not limited to these, Al may be used from the viewpoint of ease of processing and cost. The film thickness is preferably 5 to 60 μm.

  Further, the material may be different between the antenna and the connection pad. The antenna and the connection pad may be formed by performing a patterning process after a conductive material is formed on the entire surface by a sputtering method, an inkjet method, screen printing, offset printing, gravure printing, or the like (hereinafter collectively referred to as “ May be referred to as “droplet discharge method”). Alternatively, the conductive material may be stacked. Further, after the conductive pattern is formed by these methods, a conductive material that is the same as or different from the conductive pattern may be formed by a plating method. Note that throughout this specification, the connection pad portion may be provided on the TFT side.

  Note that the antenna and the connection pad are preferably formed so as to have a metal material having excellent malleability and ductility, and more preferably, the antenna and the connection pad are made thick to withstand stress due to deformation. Further, it is desirable to form the connection pads as much as possible in order to ensure connection with the thin film integrated circuit device.

  In addition, as the adhesive layer, cyanoacrylate materials that are cured by reacting with minute amounts of moisture in the air (mainly used as instant adhesives), vinyl acetate resin emulsions (emulsions), rubber materials Transparent, quick-drying, water-resistant PVC resin materials, vinyl acetate solution materials, epoxy materials, hot-melt (heat-melting) materials, and the like can be used. Of course, it is not limited to these as long as it has an adhesive function. In addition, when re-peeling and re-attaching after attaching an ID label to a product, etc., 3M Post-it (registered trademark) product or Moore (Moore Business Forms Incorporated) A re-peelable and re-adhesive adhesive used for Note Sticks (registered trademark) products and the like may be used. For example, an acrylic pressure-sensitive adhesive, a synthetic rubber pressure-sensitive adhesive, a natural rubber pressure-sensitive adhesive and the like described in JP-A-2001-30403, JP-A-2992092, and JP-A-6-299127 can be used.

  As the separator, paper and synthetic paper are used, but plastic materials, resin materials such as PET, polypropylene, polyethylene, polystyrene, and nylon, inorganic materials, and the like can be used, but are not limited thereto. As the coating layer, transparent resin materials such as plastic, PET, polypropylene, polyethylene, polystyrene, and nylon, DLC (diamond-like carbon), and the like can be used. Further, the print may be formed on the label substrate by a known printing method or the like. As the thin film integrated circuit device 13, a chip including a thin film active element such as a TFT can be typically used. A specific structure and manufacturing method will be described later.

  Here, FIG. 2 and FIG. 3 show sectional views of the label substrate of FIG. In the thin film integrated circuit device 13, a plurality of TFTs 23 are formed, and further, a connection wiring 21 for connecting to an antenna is formed.

  As the conductive material, various materials can be selected according to the function of the conductive film. Typical examples are silver (Ag), copper (Cu), gold (Au), nickel (Ni). , Platinum (Pt), chromium (Cr), tin (Sn), palladium (Pd), iridium (Ir), rhodium (Rh), ruthenium (Ru), rhenium (Re), tungsten (W), aluminum (Al) Tantalum (Ta), indium (In), tellurium (Te), molybdenum (Mo), cadmium (Cd, zinc (Zn), iron (Fe), titanium (Ti), silicon (Si), germanium (Ge), Zirconium (Zr), barium (Ba), antimony lead, tin oxide / antimony, fluorine-doped zinc oxide, carbon, graphite, glassy carbon, lithium, beryllium , Sodium, magnesium, potassium, calcium, scandium, manganese, zirconium, gallium, niobium, sodium, sodium-potassium alloy, magnesium / copper mixture, magnesium / silver mixture, magnesium / aluminum mixture, magnesium / indium mixture, aluminum / aluminum oxide Indium tin oxide (ITO), zinc oxide (ZnO: Zinc Oxide), gallium used as a mixture, lithium / aluminum mixture, silver halide fine particles, or the like, or dispersible nanoparticles, or transparent conductive film Oxide Zinc Oxide (GZO), indium oxide mixed with 2-20% zinc oxide (IZO: Indium Zinc Oxide), organic Indium, organic tin, titanium nitride, etc. can be used, and particularly for materials used as transparent conductive films, silicon (Si) or silicon oxide (SiOx) is contained in the paste or sputtering target. For example, a conductive material in which silicon oxide is contained in ITO (hereinafter referred to as “ITSO” for convenience) can be used, and layers made of these materials can be stacked. A desired conductive film may be formed.

  2, the connection wiring 21 of the thin film integrated circuit device and the connection pad 12 of the label substrate may be referred to as an anisotropic conductive film (hereinafter simply referred to as “ACF” (Anisotropic Conductive Film). The conductive paste (ACP) may also be referred to) 22. Such a method of attaching the thin film integrated circuit device upside down is called a face-down method.

  Here, the ACF has a structure in which conductive particles are dispersed in a layer made of a main component constituting an adhesive called a binder layer. Accordingly, the thin film integrated circuit device and the connection pad can be bonded, and at the same time, conduction can be ensured. In the thin film integrated circuit device, as will be described later, after a plurality of thin film integrated circuit devices are manufactured, element separation is performed by dicing or the like, and each thin film integrated circuit device is a small vacuum tweezers 24 or a minute size shown in FIG. By conveying using the pin 25 of size, it can be affixed to a desired position on the label substrate.

  Next, the cross-sectional structure of the antenna will be described. In this embodiment, as shown in FIG. 1, a case of an electromagnetic induction type non-contact type ID label using a coiled antenna will be described. When the current flowing through the antenna approaches a magnetic field generated from a reader / writer (not shown) (hereinafter simply referred to as “R / W”) due to the coiled antenna, an electromagnetic induction phenomenon causes a current in the closed loop of the coil. Current flows, and the thin film integrated circuit device is activated. Therefore, as shown in FIG. 1, the thin film integrated circuit device needs to be connected to both ends (for example, the outside and the inside) of the antenna.

  At this time, an interconnection 18 as shown in FIGS. 1A and 2 is provided so that the antennas do not short-circuit, and the thin film integrated circuit device and the outer end of the antenna are connected via the contact portion 19. Connected. The contact portion is preferably provided in advance on the label substrate. Note that the cross wiring 18 may be formed using the same or different conductive material as the antenna 11. The formation method is not particularly limited, and can be performed in the same manner as the antenna formation.

  FIG. 3 shows a case where the thin film integrated circuit device and the label substrate are bonded via the adhesive layer 26, and the connection wiring 21 of the thin film integrated circuit device and the connection pad 12 of the label substrate are directly connected. Is. As the adhesive layer 26, the same material as the adhesive layer 15 described above can be used. Each thin film integrated circuit device after the element separation can be attached to a desired position on the label substrate by being transported using the micro size pin 25 or the small vacuum tweezers 24 shown in FIG.

  As a method for adhering the thin film integrated circuit device and the label substrate, methods other than those shown in FIGS. 2 and 3 may be employed. For example, although not shown, there are methods of using a double-sided tape or forming a resin or the like so as to cover the thin film integrated circuit device.

  In this embodiment, since the cross wiring 18 is exposed to the outside of the label base (on the coating layer side), it is preferable to form the coating layer 17 shown in FIG.

  Further, in this embodiment, an antenna structure using an electromagnetic induction type is adopted, but an electromagnetic coupling type using mutual induction of coils by an alternating magnetic field, a microwave that transmits and receives data by microwaves (2.45 GHz). Any type of optical communication type that communicates with an ID label by using spatial light transmission by light using a mold or near-infrared rays can be appropriately employed. Further, although the number of contacts between the thin film integrated circuit device and the antenna is two in this embodiment, the number is not limited to this number.

(Embodiment 2)
The structure and manufacturing method of the ID label according to the present invention will be described mainly with reference to FIGS. FIG. 1B is a perspective view showing a laminated structure of ID labels according to the present invention. Here, for the sake of convenience, a label base portion to be attached to a product or the like is shown below, and a separator that serves as a label mount is shown above.

  In FIG. 1B, an antenna 11 and a connection pad 12 that is a connecting portion between the antenna and a thin film integrated circuit device are formed in advance on a label substrate 10, and the thin film integrated circuit device 13 formed separately is labeled substrate. 1A is the same as in FIG. 1A except that the cross wiring 18 that connects the thin film integrated circuit device and the antenna is formed inside the label substrate. There are features.

  At this time, an insulating layer 27 is provided so that the antenna 11 and the cross wiring 18 are not short-circuited. Further, a contact portion 28 is formed in the insulating layer 27, and a terminal outside the antenna 11 and the cross wiring 18 are connected. A cross-sectional view in the XY direction in FIG. 1B is illustrated in FIG.

  The insulating layer 27 includes organic resin such as polyimide, acrylic, polyamide, resist, siloxane, or the like, or carbon such as silicon oxide, silicon nitride, silicon oxynitride, DLC (diamond-like carbon), or carbon nitride (CN). An inorganic material such as a film, PSG (phosphorus glass), or BPSG (phosphorus boron glass) can be used. However, the film thickness including the insulating layer 27 and the cross wiring 18 is less than the film thickness of the thin film integrated circuit device 13 as shown in FIG. 4A so that the film thickness of the entire ID label does not become unnecessarily thick. It is desirable that

  In this embodiment, the thin film integrated circuit device and the label substrate are connected by the anisotropic conductive film 22 as in FIG. 2, but the method shown in FIG. 3 may be adopted.

  The remaining configuration can be the same as in the first embodiment.

  In the present embodiment, since the cross wiring is formed inside the label base, it is not necessary to provide a coating layer on the surface of the label base as shown in FIG. 1A, and the entire ID label can be made thin.

  In the present embodiment, an antenna structure using an electromagnetic induction type is employed, but any one of an electromagnetic coupling type, a microwave type, and an optical communication type may be employed as appropriate. Further, when a so-called hybrid type ID label having both a non-contact type and a contact type function is desired, a wiring pattern constituting the connection terminal may be formed by a printing method or the like. Further, although the number of contacts between the thin film integrated circuit device and the antenna is two in this embodiment, the number is not limited to this number.

(Embodiment 3)
The structure and manufacturing method of the ID label according to the present invention will be described mainly with reference to FIGS. 1C and 4B. FIG. 1C is a perspective view showing a laminated structure of ID labels according to the present invention. Here, for the sake of convenience, a label base portion to be attached to a product or the like is shown below, and a separator that serves as a label mount is shown above.

  In FIG. 1C, an antenna 11 and a connection pad 12 that is a connecting portion between the antenna and the thin film integrated circuit device are formed in advance on the label base 10, and the thin film integrated circuit device 13 that is separately formed is used as the label base. 1A is similar to FIG. 1A in that it is affixed to the thin film integrated circuit device, but the cross wiring 18 that connects the thin film integrated circuit device and the antenna is formed in the thin film integrated circuit device. There is a feature.

  A cross-sectional view in the XY direction in FIG. 1C is illustrated in FIG. From the TFT formation region 29, connection lines 21 a to 21 c for connecting to the inner end portion and the outer end portion of the antenna are provided. A cross wiring 18 is provided between the connection wiring 21a connected to the outer end of the antenna and the TFT formation region. The cross wiring 18 is formed by forming a TFT formation region, forming a first interlayer film 30a, opening a contact hole, and then depositing a conductive material by sputtering or discharging by a droplet discharge method. be able to. Further, the second interlayer film 30b is formed and the connection wiring 21c is formed so that the cross wiring 18 and the antenna 11 are not short-circuited. In addition, as the connection wirings 21 a to 21 c and the cross wiring 18, the conductive material used in the above embodiment can be appropriately employed. Furthermore, a protective film 31 may be formed on the second interlayer film 30b.

  Examples of the material for the interlayer film include photosensitive or non-photosensitive organic materials such as polyimide, acrylic, polyamide, resist, and benzocyclobutene, and siloxane (a skeleton structure is formed by a bond of silicon and oxygen, and at least a substituent group includes A heat-resistant organic resin such as a material containing hydrogen or a material having at least one of fluorine, an alkyl group, and an aromatic hydrocarbon as a substituent can be used. Depending on the material, spin coating, dipping, spray coating, droplet discharge methods (inkjet method, screen printing, offset printing, etc.), doctor knife, roll coater, curtain coater, knife coater, etc. are adopted as the forming method. be able to. Alternatively, an SOG film obtained by a coating method (for example, an SiOx film containing an alkyl group) can also be used. In addition, an inorganic material may be used. In that case, a film containing carbon such as silicon oxide, silicon nitride, silicon oxynitride, DLC, or CN, PSG, BPSG, an alumina film, or the like can be used. As a formation method, a plasma CVD method, a low pressure CVD (LPCVD) method, an atmospheric pressure plasma, or the like can be used. The materials of the interlayer films 30a and 30b may be the same or different.

In addition to silicon oxide (SiOx) and silicon oxynitride (SiOxNy), the protective film is made of an alkali such as Na element such as silicon nitride (SiNx, Si ₃ N ₄ , SiNOx) or silicon nitride oxide (SiNxOy). A material having a function of blocking a metal element is preferably used. In particular, ID labels, ID cards, ID tags, and the like are often handled directly with bare hands, and can prevent entry of Na contained in sweat. More preferably, the above materials are stacked. For example, (A) SiN or SiNO, (B) SiO ₂ or SiON, (C) TFT, and (D) SiN or SiNO may be stacked in this order. Note that these stacked structures can be freely combined. In addition to the upper and lower sides of the TFT, the outer peripheral portion may be covered with the above material. Hereinafter, silicon oxynitride (SiOxNy) and silicon nitride oxide (SiNxOy) may be collectively referred to as silicon oxynitride.

  Moreover, when the adhesive layer made of an organic resin material is provided in close contact with the protective layer, the TFT can be protected from impurities contained in the adhesive layer by using the protective layer using the above material. . Further, in the case where an antenna is formed in contact with or inside the protective layer, intrusion of a conductive material (particularly Cu, Ag) can be prevented by using the protective layer.

  In this embodiment, the thin film integrated circuit device and the label substrate are connected by the anisotropic conductive film 22 as in FIG. 2, but the method shown in FIG. 3 may be adopted.

  The remaining configuration can be the same as in the first embodiment.

  In this embodiment, since the cross wiring is formed in the thin film integrated circuit device, it is not necessary to provide a coating layer on the surface of the label substrate, and it is not necessary to open a contact hole on the label substrate.

  In the present embodiment, an antenna structure using an electromagnetic induction type is employed, but any one of an electromagnetic coupling type, a microwave type, and an optical communication type may be employed as appropriate. Further, when a so-called hybrid type ID label having both a non-contact type and a contact type function is desired, a wiring pattern constituting the connection terminal may be formed by a printing method or the like. Further, although the number of contacts between the thin film integrated circuit device and the antenna is two in this embodiment, the number is not limited to this number.

(Embodiment 4)
The structure and manufacturing method of the ID label according to the present invention will be described mainly with reference to FIG. FIG. 5A is a perspective view showing a laminated structure of ID labels according to the present invention. Here, a label base portion to be attached to a product or the like is shown on the upper side, and a separator serving as a label mount is shown on the lower side.

  In the present embodiment, the antenna 11 and the connection pad 12 that is a connecting portion between the antenna and the thin film integrated circuit device are formed in advance on the internal substrate (inlet substrate) 32, and the thin film integrated circuit device 13 that is separately formed is formed in the internal substrate 32. It is characterized in that it is affixed to the substrate 32 and a label substrate is affixed.

  The method of providing the antenna and the thin film integrated circuit device on the internal substrate 32 can be performed in the same manner as in the case of providing the label substrate in the above embodiment (see FIGS. 2 to 4). However, a thin film-like substrate may be used so that the entire ID label does not become unnecessarily thick. As the material, resin materials such as paper, synthetic paper, plastic, PET, polypropylene, polyethylene, polystyrene, and nylon, inorganic materials, and the like can be used, but the material is not limited thereto. Further, in order to allow the ID label to be attached not only to products having a flat shape but also to products having various shapes, it is desirable to use a flexible material having flexibility for the internal substrate. Thereby, handling of an ID label becomes easy. In addition, as a resin material, the high density polyethylene (HDPE) etc. which were described in Unexamined-Japanese-Patent No. 2001-30403 can also be used, for example.

  FIG. 5B is an enlarged cross-sectional view of the finished product of the ID label produced according to this embodiment. The upper and lower sides of the internal substrate on which the antenna and the thin film integrated circuit device are formed are covered with protective layers 34 and 35. As the protective layer, a layer having a function of blocking impurities such as Na element such as silicon oxide, silicon nitride, and silicon oxynitride is preferably used, and more preferably, these layers are stacked. Of course, other organic resin materials can also be used.

  The separately formed internal substrate 32 is attached to the label substrate 10 via the adhesive layer 36. A print 14 is applied to the surface of the label base (printing surface 33) as necessary. In this embodiment, since the size of the internal substrate 32 is smaller than the size of the label substrate 10, the adhesive layer 36 can be formed on the side surface of the internal substrate, whereby the separator 16 and the internal substrate can be formed. 32 and the label substrate 10 can be held.

  When actually attaching an ID label to a product or the like, the separator may be peeled off and attached via the adhesive layer 36. At this time, since the protective layer 35 is provided on the lower portion of the inner base (the surface to be bonded to the product), impurities such as Na entering the thin film integrated circuit device from the outside can be blocked. Therefore, for example, it is effective that the upper protective layer 34 is a single layer for thinning and the lower protective layer 35 is a laminated structure for improving impurity blocking properties.

  In the case where the internal substrate 32 is approximately the same size as the label substrate 10, an adhesive layer may be provided on both the upper and lower surfaces of the internal substrate 32 and adhered to the label substrate 10 and the separator 16.

  In the present embodiment, an antenna structure using an electromagnetic induction type is employed, but any one of an electromagnetic coupling type, a microwave type, and an optical communication type may be employed as appropriate. Further, when a so-called hybrid type ID label having both a non-contact type and a contact type function is desired, a wiring pattern constituting the connection terminal may be formed by a printing method or the like. Further, although the number of contacts between the thin film integrated circuit device and the antenna is two in this embodiment, the number is not limited to this number.

(Embodiment 5)
The structure and manufacturing method of the ID card according to the present invention will be described mainly with reference to FIG. FIG. 6 is a perspective view showing a laminated structure of an ID card according to the present invention.

  In FIG. 6A, an antenna 11 and a connection pad 12 which is a connecting portion between the antenna and the thin film integrated circuit device 13 are formed in advance on a card lower base 37b of the ID card, and a thin film integrated circuit formed separately. The case where the circuit device 13 is affixed to the card lower base 37b is shown. Further, a cover (card upper base body 37a) covering the thin film integrated circuit device is bonded to the card lower base body 37b with an adhesive layer 39 interposed therebetween. A print 14 is applied to the card upper base 37a or the card lower base 37b as required. Further, when the cross wiring 18 for connecting the connection pad 12 and the antenna 11 is exposed on the surface of the card lower base, the coating layer 40 may be separately formed.

  As the card substrate, resin materials such as plastic, PET, polypropylene, polyethylene, polystyrene, and nylon are typically used, but paper, synthetic paper, inorganic material, and the like may be used. In general, the ID card is rarely used by being folded, but when it is desired to make a bendable ID card, it is desirable to use a flexible material having flexibility as a card base. In addition, as a resin material, HDPE etc. which were described in Unexamined-Japanese-Patent No. 2001-30403 can also be used, for example. Two or more of the above materials may be used in combination.

  Note that the structure of the antenna including the cross wiring, the method for connecting the thin film integrated circuit device and the antenna, and the like can be performed in the same manner as in Embodiments 1 to 4. Thus, the ID card 41 is completed.

  FIG. 6B shows the case where the internal substrate 32 on which the antenna 11 is formed and the thin film integrated circuit device 13 is attached is sealed with a card lower substrate 37b through adhesive layers 38 and 39. It is. Although not shown, if the inner base 32 is made smaller than the card lower base 37b, one of the adhesive layer 38 and the adhesive layer 39 is not required, and the ID card can be made thinner. .

  In the present embodiment, an antenna structure using an electromagnetic induction type is adopted, but any one of an electromagnetic coupling type, a microwave type, and an optical communication type can be adopted as appropriate. When a so-called hybrid ID card having both non-contact type and contact type functions is desired, a wiring pattern constituting the connection terminal may be formed by a printing method or the like. Further, although the number of contacts between the thin film integrated circuit device and the antenna is two in this embodiment, the number is not limited to this number.

(Embodiment 6)
The structure and manufacturing method of bills, coins, etc. according to the present invention will be described mainly with reference to FIG. FIG. 7 is a view showing a stacked structure of banknotes and coins according to the present invention.

  In FIG. 7A, the internal substrate 32 on which the antenna 11 is formed and the thin film integrated circuit device 13 is attached is sealed with an upper substrate 42a and a lower substrate 42b with an adhesive layer 36 interposed therebetween. is there. As long as the upper base 42a and the lower base 42b are banknotes, pulp materials such as paper and synthetic paper are usually used, but are not limited thereto. Moreover, the said structure is not limited to a banknote. The base can be changed as appropriate for various purposes, and bearers such as stamps, tickets, tickets, admission tickets, gift certificates, book tickets, stationery tickets, beer tickets, gift tickets, various gift certificates, various service tickets, etc. Bonds, securities, promissory notes, checks, stock certificates, securities such as bonds, resident's card, certified copy of family register, family register extract, employee ID card, student ID card, membership card, examination card, attendance card, qualification certificate, identification It may be selected corresponding to all items such as certificates such as certificates, packing tags used for identifying objects, ID tags such as price tags, name tags, and nameplates, and wrapping paper.

  FIG. 7B shows a circular or elliptical inner substrate 44 on which the antenna 11 is formed and the thin film integrated circuit device 13 is attached. The substrate 43a and the lower substrate 43b are sealed. Since the upper base 43a and the lower base 43b are mainly used for coins, they are circular or elliptical, but are not necessarily limited to this shape. The above-mentioned coin refers to money that circulates in the market, but includes coins that can be used in the same way as money in a specific region (cash vouchers). In addition, temporarily issued items such as commemorative coins and commemorative medals are also included.

  7A and 7B, the structure of the antenna including the cross wiring, the method for connecting the thin film integrated circuit device and the antenna, and the like can be performed in the same manner as in Embodiments 1 to 4. At this time, by making the area occupied by the inner base bodies 32 and 44 as small as possible as compared with the upper base bodies 42a and 43a and the lower base bodies 42b and 43b, the adhesive area occupied by the adhesive layer 36 is increased and the fracture resistance is excellent. Articles such as banknotes, securities, securities, bearer bonds and coins can be obtained.

  Further, the shapes of the internal bases 32 and 44 and the antenna 11 are not limited to the shapes shown in FIGS.

Since the thin film integrated circuit device used in the present invention is composed of thin film active elements such as TFTs, it has a thickness of about 5 μm or less (excluding the thickness of the protective film if formed on the upper and lower sides). ). Preferably, the thickness is 0.1 μm to 3 μm. Also, the size of the IDF chip is 25 mm ² or less, preferably is preferably set to an area of 0.09mm ² ~16mm ^2. The upper and lower protective layers are preferably formed to be larger than the IDF chip size.

  As described above, the thin film integrated circuit device used in the present invention is extremely thin compared to the conventional IC chip having a thickness of about 0.06 mm (60 μm). It is very suitable for insertion as a chip in a thin article made of a resin in the form of a resin. In addition, since the IDF chip is thin, the periphery can be filled with an organic resin material to be integrated. Thereby, the influence on the IDF chip due to bending stress can be prevented.

  In the present embodiment, an antenna structure using an electromagnetic induction type is adopted, but any one of an electromagnetic coupling type, a microwave type, and an optical communication type can be adopted as appropriate. Further, when it is desired to use a hybrid type having both a non-contact type and a contact type function, a wiring pattern constituting the connection terminal may be formed by a printing method or the like. Further, although the number of contacts between the thin film integrated circuit device and the antenna is two in this embodiment, the number is not limited to this number.

(Embodiment 7)
A method for producing an ID label according to the present invention will be described mainly with reference to FIG. FIG. 8 is a schematic diagram showing an ID label production line according to the present invention.

  First, as shown in FIG. 8A, a label paper serving as an ID label substrate is supplied from a label paper supply means 300 (roll 1), and an IDF chip (thin film integrated circuit device) is placed at a desired position on the label paper. paste. At this time, an adhesive, ACF, an ultrasonic bonding method, or a UV bonding method is appropriately used. Here, it is assumed that the antenna is formed on the label paper, and the label paper and the IDF chip are bonded by the ACF supply means 301 and the IDF chip attaching means 302 via the ACF. Of course, the antenna formed on the label paper and the IDF chip are connected. Next, the adhesive layer is supplied from the adhesive layer supply means 303, and the separate paper (separator) supplied from the separate paper supply means 304 (roll 2) is attached, thereby completing the ID label. Finally, the ID label is taken up by the label take-up means 305 (roll 3). The ID label substrate is preferably separated for each label in advance, and a separate paper sheet is preferably supplied. In this case, individually separated ID labels 20 can be obtained on a series of label mounts 118 (separators) as shown in FIG.

  Further, the order of supply of label paper and supply of separate paper may be reversed as shown in FIG. In the figure, it is assumed that the antenna is integrally formed on the IDF chip, and the ACF supply means 301 is omitted. Alternatively, after a plurality of ID labels are formed in a strip shape, label separation may be performed by a label separation unit 306 such as a die cutting machine to obtain individual labels, and the product may be collected by the collection unit 307. Of course, FIGS. 8A and 8B can be combined alternately.

  The method according to the present embodiment can be appropriately employed for the ID card, ID tag, banknote, coin, certificate, bearer bond, securities, and the like according to the present invention. For example, in the case of an ID tag, the lower base material may be held on the roll 1 and the upper base material may be held on the roll 2.

(Embodiment 8)
A method for manufacturing an ID card and an ID tag according to the present invention will be described mainly with reference to FIGS. FIG. 9 shows a schematic diagram showing a production line of an ID card and an ID tag according to the present invention and an enlarged view of a finished product.

  First, as shown in FIG. 9A, a material for a base of an ID card or ID tag is supplied from a base supply means 308 (roll 1), and an IDF chip is placed at a desired position on the base by an IDF sticking means 302. (Thin film integrated circuit device) is attached. At this time, an adhesive, ACF, an ultrasonic bonding method, or a UV bonding method is appropriately used. Next, when the base is continuous in a strip shape, the base is separated into individual ID cards or ID tags by the base separating means 309. Then, the periphery of each substrate is laminated by the laminating apparatus 310. Thereby, the ID card or the ID tag is completed.

  In addition, after forming an IDF chip | tip in the desired position of a strip | belt-shaped base | substrate and performing a lamination process, you may isolate | separate for every ID card or ID tag. The laminated ID card or ID tag is collected by the collecting means 307.

  FIG. 9B is an enlarged cross-sectional view of a finished product of an ID card or ID tag manufactured using the method according to the present embodiment. The label base 32 is formed with the antenna 11 and the thin film integrated circuit device 13 connected to the antenna via the connection pad 12 and is covered with the film layer 45 via the protective layers 34 and 35. . Note that it is desirable to form the protective layers 34 and 35 in order to protect the thin film integrated circuit device and the antenna in the heat treatment at the time of laminating. As the protective layer, a film containing carbon such as DLC or CN, a silicon nitride film, a silicon nitride oxide film, or the like can be used, but the protective layer is not limited thereto. As a formation method, a plasma CVD method, an atmospheric pressure plasma, or the like can be used.

  Thus, a laminated ID card or ID tag can be obtained. Note that the manufacturing process is not limited to ID cards and ID tags as long as the product is suitable for laminating.

(Embodiment 9)
The structure and manufacturing method of the ID label and ID card according to the present invention will be described mainly with reference to FIGS. First, FIG. 10 is a perspective view showing a laminated structure of ID labels according to the present invention. Here, a label base portion to be attached to a product or the like is shown on the upper side, and a separator serving as a label mount is shown on the lower side.

  FIG. 10 shows an antenna integrated thin film integrated circuit device 46 (hereinafter sometimes referred to as “antenna integrated IDF chip”) in which an antenna 47 and a thin film integrated circuit device 48 are integrally formed on an ID label 49. The method of sticking to the separator 16 or the label base | substrate 10 through the adhesive bond layer 15 is shown. In addition, the material of a label base | substrate, an adhesive bond layer, and a separator applies to the said embodiment. Further, the shape of the IDF chip and the antenna is not limited to the shape of FIG.

  FIG. 11 shows a method of attaching the antenna integrated thin film integrated circuit device 46 to the card lower base 37b through the adhesive layer 15 in the ID card 50. The materials for the card lower base and the adhesive layer are the same as in the above embodiment. Further, the shape of the IDF chip and the antenna is not limited to the shape of FIG.

  FIG. 12 is a cross-sectional view in the X-Y direction of the antenna-integrated IDF chip in the ID label and ID card shown in FIG.

  In FIG. 12A, after the island-shaped semiconductor film 57 and the gate insulating film 58 are formed over the protective film 55, the gate electrode 56 (in this case, has a two-layer structure) and the cross wiring 52 are simultaneously formed. The case where it forms is shown. Further, an antenna 47, a wiring 51a for connecting the TFT and the antenna, and a wiring 51b for connecting the TFTs are formed through the interlayer film 53. The gate electrode 56 and the cross wiring 52, and the antenna 47 and the wirings 51a and 51b are preferably formed in the same process, but may be formed in stages.

  In FIG. 12B, after the island-shaped semiconductor film 57 and the gate insulating film 58 are formed over the protective film 55, the gate electrode 56 (in this case, has a two-layer structure) and the antenna 47 are formed. Shows the case. Further, a wiring 51 a for connecting the TFT and the antenna, a cross wiring 52, and a wiring 51 b for connecting the TFTs are formed via the interlayer film 53. The gate electrode 56 and the antenna 47, and the cross wiring 52 and the wirings 51a and 51b are preferably formed in the same process, but may be formed in stages.

  In FIGS. 12A and 12B, a TFT having a top gate structure is used. Of course, a bottom gate structure may be adopted. A specific method for manufacturing the TFT will be described later. In order to prevent impurity diffusion into the semiconductor layer 57, it is desirable to form a protective film 55 having a single layer or a stacked structure. Further, it is desirable to form the protective film 54 after the antenna is formed. The protective layer may employ silicon nitride, silicon oxide, silicon oxynitride, or the like, but preferably includes silicon nitride having impurity blocking properties such as Na.

  Alternatively, an organic material such as highly elastic polyimide may be used as the interlayer film and the protective film. Thereby, the stress at the time of deformation is concentrated on the interlayer film and the protective film having the organic material, and these films are mainly deformed, so that the stress applied to the thin film transistor is reduced. In addition, when deformation occurs, the most stressed portion (edge, corner) is not the edge of the semiconductor film but the edge of the base film, so that stress concentration occurring at the edge or interface of the semiconductor film can be suppressed. .

  As shown in FIG. 25A, it is desirable that the IDF chip 110 be disposed at substantially the center of the upper and lower protective layers 54a, 55a, and 55b. Here, the IDF chip is formed to a thickness of about 5 μm or less, preferably 0.3 to 3 μm, while the antenna is generally 5 to 40 μm thick, and the protective film is 10 to 200 μm thick each above and below. Formed. Accordingly, the total thickness of the upper and lower protective films, the IDF chip, and the antenna (when the antenna is integrally formed) is defined as d, and the IDF chip is positioned at x = (d / 2) ± 30 μm, more preferably x = (D / 2) ± 10 μm is desirable (FIGS. 25B and 25C).

  Thus, by placing the IDF chip in the center of the protective film, the stress on the IDF chip can be relaxed, and the occurrence of cracks in each layer constituting the TFT can be prevented.

  The above is an example of the structure when the TFT and the antenna are integrally formed, and the structure is not necessarily limited thereto.

  In this embodiment, a specific method for manufacturing a thin film integrated circuit device will be described with reference to FIGS. Here, for the sake of simplicity, a manufacturing method will be described by showing a cross-sectional structure of a CPU and a memory portion using n-type TFTs and p-type TFTs.

  First, the separation layer 61 is formed over the substrate 60 (FIG. 13A). Here, an a-Si film (amorphous silicon film) having a thickness of 50 nm (500 mm) was formed on a glass substrate (for example, a 1737 substrate manufactured by Corning) by a CVD method. As the substrate, in addition to a glass substrate, a quartz substrate, a substrate formed of an insulating material such as alumina, a silicon wafer substrate, a plastic substrate having heat resistance that can withstand a processing temperature in a later process, or the like can be used. .

  In addition to the amorphous silicon, the separation layer includes a layer containing silicon (Si) as a main component, such as polycrystalline silicon, single crystal silicon, and SAS (semi-amorphous silicon (also referred to as microcrystalline silicon)). Can be used. These peeling layers may be formed by a sputtering method or the like in addition to the CVD method. Further, the peeling layer may be formed thinner than 50 nm.

  Next, a protective film 55 (also referred to as a base film or a base insulating film) is formed over the separation layer 61 (FIG. 13A). Here, a silicon nitride film having a thickness of 100 nm (1000 mm) is formed by a CVD method; however, the material and the manufacturing method are not limited thereto, and a silicon oxide film, a silicon oxynitride film, or the like can also be used. Further, not a single layer but also a laminated structure can be used. For example, a silicon oxynitride film (SiOxNy) (x> y), a silicon nitride oxide film (SiNxOy) (x> y) (x, y = 1, 2,...), And a silicon oxynitride film are used. It is good.

  In addition, when using the material which has silicon as main components, such as a-Si, as the peeling layer 61 and the island-like semiconductor film 57, SiOxNy is used as a protective film which touches them from the point of ensuring adhesiveness. Is desirable.

  Next, a thin film transistor (TFT) constituting a CPU and a memory of the thin film integrated circuit device is formed on the protective film 55. In addition to TFTs, thin film active elements such as organic TFTs and thin film diodes can also be formed.

  As a method for manufacturing a TFT, first, an island-shaped semiconductor film 57 is formed over the protective film 55 (FIG. 13B). The island-shaped semiconductor film 57 is formed using an amorphous semiconductor, a crystalline semiconductor, or a semi-amorphous semiconductor. In any case, a semiconductor film containing silicon, silicon germanium (SiGe), or the like as a main component can be used.

  Here, after forming amorphous silicon with a film thickness of 70 nm and further treating the surface with a solution containing nickel, a crystalline silicon semiconductor film is obtained by a thermal crystallization process at 500 to 750 ° C., and further laser crystallization is performed. To improve the crystallinity. Further, as a film forming method, a plasma CVD method, a sputtering method, an LPCVD method, or the like may be used. As a crystallization method, a laser crystallization method, a thermal crystallization method, or another catalyst (Fe, Ru, Rh) is used. , Pd, Os, Ir, Pt, Cu, Au, etc.), or they may be alternately performed a plurality of times.

In addition, a continuous wave laser may be used for the crystallization treatment of the semiconductor film having an amorphous structure, and a solid laser capable of continuous oscillation is used in order to obtain a crystal having a large particle size upon crystallization. It is preferable to apply the second to fourth harmonics of the fundamental wave (the crystallization in this case is referred to as CWLC). Typically, a second harmonic (532 nm) or a third harmonic (355 nm) of an Nd: YVO ₄ laser (fundamental wave 1064 nm) may be applied. In the case of using a continuous wave laser, laser light emitted from a continuous wave YVO ₄ laser having an output of 10 W is converted into a harmonic by a non-linear optical element. There is also a method in which a YVO ₄ crystal or GdVO ₄ crystal and a non-linear optical element are placed in a resonator to emit harmonics. Preferably, the laser beam is shaped into a rectangular or elliptical shape on the irradiation surface by an optical system, and the object to be processed is irradiated. At this time, the energy density of approximately 0.01 to 100 MW / cm ² (preferably 0.1 to 10 MW / cm ²⁾ is required. Then, irradiation may be performed by moving the semiconductor film relative to the laser light at a speed of about 10 to 2000 cm / s.

In the case of using a pulsed laser, a frequency band of several tens Hz to several hundreds Hz is usually used, but a pulsed laser having an oscillation frequency of 10 MHz or higher that is significantly higher than that may be used (in this case) Crystallization is referred to as MHzLC). It is said that the time from when the semiconductor film is irradiated with laser light by pulse oscillation until the semiconductor film is completely solidified is said to be several tens of nanoseconds to several hundreds of nanoseconds. The laser light of the next pulse can be irradiated after being melted by the laser light and solidifying. Therefore, unlike the case of using a conventional pulsed laser, the solid-liquid interface can be continuously moved in the semiconductor film, so that a semiconductor film having crystal grains continuously grown in the scanning direction is formed. Is done. Specifically, a set of crystal grains having a width of 10 to 30 μm in the scanning direction of the included crystal grains and a width of about 1 to 5 μm in a direction perpendicular to the scanning direction can be formed. By forming single crystal grains extending long along the scanning direction, it is possible to form a semiconductor film having almost no crystal grain boundaries in at least the channel direction of the TFT.

A crystalline silicon semiconductor film is obtained by the above method. Note that the crystals are preferably aligned in the source, channel, and drain directions. The thickness of the crystal layer is preferably 20 to 200 nm (typically 40 to 170 nm, more preferably 50 to 150 nm). Thereafter, an amorphous silicon film for gettering the metal catalyst was formed on the semiconductor film via an oxide film, and gettering treatment was performed by heat treatment at 500 to 750 ° C. Furthermore, in order to control the threshold value as the TFT element, boron ions having a dose of the order of 10 ¹³ / cm ² were implanted into the crystalline silicon semiconductor film. Thereafter, the island-shaped semiconductor film 57 was formed by etching using the resist as a mask.

Note that in forming the crystalline semiconductor film, the crystalline semiconductor film can also be formed by directly forming a polycrystalline semiconductor film by LPCVD as a source gas of disilane (Si ₂ H ₆ ) and germanium fluoride (GeF ₄ ). A semiconductor film can be obtained. The gas flow ratio is Si ₂ H ₆ / GeF ₄ = 20 / 0.9, the film forming temperature is 400 to 500 ° C., and He or Ar is used as the carrier gas, but the present invention is not limited to this.

Note that in the channel region in the TFT in particular, 5 × 10 ^{15 to} 2.5 × 10 ²¹ cm ⁻³ (0.00001 to 5 atomic%), preferably 0.0005 to 5 atomic% of hydrogen or halogen is contained. It should be added. In any case, it is desirable to contain more than the content of hydrogen or halogen contained in the single crystal used for the IC chip. Thereby, even if a local crack occurs in the TFT portion, it can be terminated (terminated) by hydrogen or halogen.

  Next, a gate insulating film 58 is formed over the island-shaped semiconductor film 57 (FIG. 13B). The gate insulating film is preferably formed using a thin film formation method such as a plasma CVD method or a sputtering method, and a film containing silicon nitride, silicon oxide, silicon nitride oxide, or silicon oxynitride is formed as a single layer or a stacked layer. In the case of stacking, for example, a three-layer structure of a silicon oxide film, a silicon nitride film, and a silicon oxide film is preferable from the substrate side.

  Next, the gate electrode 56 is formed (FIG. 13C). In this case, TaN (tantalum nitride) with a thickness of 30 nm and W (tungsten) with a thickness of 370 nm are stacked by sputtering, and then etched using the resist 62 as a mask to form the gate electrode 56. . Here, a mask made of SiOx or the like may be used instead of the resist mask. In this case, a patterning process is added to a mask (referred to as a hard mask) made of SiOx, SiON, or the like. However, since the film thickness of the mask during etching is less than that of the resist, a gate electrode layer having a desired width may be formed. it can. Of course, the material, structure, and manufacturing method of the gate electrode 56 are not limited to this, and can be selected as appropriate. For example, the gate electrode 56 may be selectively formed using a droplet discharge method without using the resist 62.

  Note that various materials can be selected as the conductive material depending on the function of the conductive film, but typical ones are silver (Ag), copper (Cu), gold (Au), nickel (Ni). , Platinum (Pt), chromium (Cr), tin (Sn), palladium (Pd), iridium (Ir), rhodium (Rh), ruthenium (Ru), rhenium (Re), tungsten (W), aluminum (Al) Tantalum (Ta), indium (In), tellurium (Te), molybdenum (Mo), cadmium (Cd, zinc (Zn), iron (Fe), titanium (Ti), silicon (Si), germanium (Ge), Zirconium (Zr), barium (Ba), antimony lead, tin oxide / antimony, fluorine-doped zinc oxide, carbon, graphite, glassy carbon, lithium, beryllium Sodium, magnesium, potassium, calcium, scandium, manganese, zirconium, gallium, niobium, sodium-potassium alloy, magnesium / copper mixture, magnesium / silver mixture, magnesium / aluminum mixture, magnesium / indium mixture, aluminum / aluminum oxide mixture, ITO / Indium Tin Oxide, ITSO, ZnO, GZO, IZO, organic indium, organic tin, titanium nitride, etc. used as a lithium / aluminum mixture, silver halide fine particles, or the like, or dispersible nanoparticles, or a transparent conductive film Can be adopted as appropriate.

Note that although a mixed gas of CF ₄ , Cl ₂ , and O ₂ or Cl ₂ gas is used as an etching gas for forming the gate electrode by etching, it is not limited to this.

Next, the portions to become the p-type TFTs 70 and 72 are covered with a resist 63, and the gate electrode is used as a mask, and the impurity element 64 (typically P-type) imparting n-type is formed in the island-shaped semiconductor films of the n-type TFTs 69 and 71. (Phosphorus) or As (arsenic)) is doped at a low concentration (first doping step, FIG. 13D). The conditions of the first doping step are a dose of 1 × 10 ^{13 to} 6 × 10 ¹³ / cm ² and an acceleration voltage of 50 to 70 keV, but are not limited thereto. Through the first doping process, through doping is performed through the gate insulating film 58, and a pair of low-concentration impurity regions 65 is formed. The first doping step may be performed on the entire surface without covering the p-type TFT region with the resist.

Next, after removing the resist 63 by ashing or the like, a resist 66 covering the n-type TFT region is newly formed, and p-type is imparted to the island-like semiconductor films of the p-type TFTs 70 and 72 using the gate electrode as a mask. The impurity element 67 to be doped (typically B (boron)) is doped at a high concentration (second doping step, FIG. 13E). The conditions of the second doping step are a dose amount: 1 × 10 ^{16 to} 3 × 10 ¹⁶ / cm ² and an acceleration voltage: 20 to 40 keV. Through this second doping step, through doping is performed through the gate insulating film 58, and a pair of p-type high concentration impurity regions 68 are formed.

Next, after removing the resist 66 by ashing or the like, an insulating film 75 was formed on the substrate surface (FIG. 14A). Here, a two-layer structure of a SiON (silicon oxynitride) film having a thickness of 100 nm and an LTO film (Low Temperature Oxide, low temperature oxide film) having a thickness of 200 nm is employed. Here, the SiON film was formed by the plasma CVD method, and the SiO ₂ film was formed by the low pressure CVD method as the LTO film. Thereafter, although not shown, the side of the substrate on which the TFT was formed was covered with a resist, and the insulating film formed on the back surface of the substrate was removed by etching (back surface treatment).

Next, while leaving the resist formed on the TFT side of the substrate, the resist and the insulating film 75 are removed by etching using an etch-back method, and sidewalls (side walls) 76 are formed in a self-aligned manner (self-alignment) ( FIG. 14B). As the etching gas, a mixed gas of CHF ₃ and He was used. Note that the step of forming the sidewall is not limited to these.

Next, a resist 77 covering the p-type TFT region is newly formed, and an n-type impurity element 78 (typically P or As) is doped at a high concentration using the gate electrode 56 and the sidewall 76 as a mask. (Third doping step, FIG. 14C). The conditions of the third doping step are a dose amount: 1 × 10 ^{13 to} 5 × 10 ¹⁵ / cm ² and an acceleration voltage: 60 to 100 keV. Through the third doping step, through doping is performed through the gate insulating film 58, and a pair of n-type high concentration impurity regions 79 are formed.

  Although not shown, the impurity regions may be thermally activated after the resist 77 is removed by ashing or the like. For example, after a 50 nm SiON film is formed, heat treatment may be performed in a nitrogen atmosphere at 550 ° C. for 4 hours. In addition, after the SiNx film containing hydrogen is formed to a thickness of 100 nm, defects in the crystalline semiconductor film can be improved by performing heat treatment at 410 ° C. for 1 hour in a nitrogen atmosphere. This terminates dangling bonds existing in, for example, crystalline silicon, and is called a hydrogenation process. Thereafter, a SiON film having a film thickness of 600 nm is formed as a cap insulating film for protecting the TFT. Note that the hydrogenation process may be performed after the formation of the SiON film. In this case, the SiNx and SiON films can be continuously formed. Thus, a three-layer insulating film of SiON, SiNx, and SiON is formed on the TFT, but the structure and material are not limited to these. In addition, these insulating films have a function of protecting the TFT, so that it is desirable to form them as much as possible.

  Next, an interlayer film 53 is formed over the TFT (FIG. 14D). As the interlayer film 53, a heat-resistant organic resin such as polyimide, acrylic, polyamide, or siloxane can be used. As a forming method, a spin coat, dip, spray coating, droplet discharge method, doctor knife, roll coater, curtain coater, knife coater, or the like can be employed depending on the material. In addition, an inorganic material may be used, and in that case, PSG, BPSG, an alumina film, or the like can be used. Note that the interlayer film 53 may be formed by stacking these insulating films.

Next, after forming a resist, a contact hole is formed by etching, and a wiring 51 for connecting TFTs and a connection wiring 21 for connecting to an external antenna are formed (FIG. 14D). A gas used for etching when opening the contact hole is a mixed gas of CHF ₃ and He, but is not limited to this. Moreover, the wiring 51 and the connection wiring 21 may be formed simultaneously using the same material, or may be formed separately. Here, the wiring 51 connected to the TFT has a five-layer structure of Ti, TiN, Al—Si, Ti, and TiN, and is formed by sputtering and then patterned.

  In addition, by mixing Si in the Al layer, generation of hillocks in resist baking during wiring patterning can be prevented. Further, instead of Si, about 0.5% Cu may be mixed. Further, the hillock resistance is further improved by sandwiching the Al—Si layer with Ti or TiN. In the patterning, it is desirable to use the hard mask made of SiON or the like. Note that the wiring material and the formation method are not limited to these, and the material used for the gate electrode described above may be employed.

  Note that as the protective film, a film containing carbon such as DLC or CN, a silicon nitride film, a silicon nitride oxide film, or the like can be used. As a formation method, a plasma CVD method, an atmospheric pressure plasma, or the like can be used.

  Alternatively, a photosensitive or non-photosensitive organic material such as polyimide, acrylic, polyamide, resist, or benzocyclobutene, or a heat-resistant organic resin such as siloxane can be used. As a forming method, a spin coat, dip, spray coating, droplet discharge method, doctor knife, roll coater, curtain coater, knife coater, or the like can be employed depending on the material. Alternatively, an SOG film obtained by a coating method (for example, an SiOx film containing an alkyl group) can also be used. In addition, an inorganic material may be used. In that case, silicon oxide, silicon nitride, silicon oxynitride, PSG, BPSG, an alumina film, or the like can be used. Note that the protective film may be formed by stacking these insulating films.

  In the present embodiment, the case where only the TFT region constituting the CPU 73, the memory 74, etc. and the terminal portion 80 connected to the antenna are integrally formed has been shown. Embodiments can be applied. In this case, an antenna is preferably formed on the interlayer film 53 or the protective film 54 and further covered with another protective film.

  As the conductive material of the antenna, Ag, Au, Al, Cu, Zn, Sn, Ni, Cr, Fe, Co, or Ti, or an alloy containing them can be used, but is not limited thereto. Further, the material may be different between the wiring and the antenna. Note that the wiring and the antenna are preferably formed so as to have a metal material having excellent malleability and ductility, and more preferably, the wiring and the antenna are made thick to withstand stress due to deformation.

  As a formation method, after forming a film on the entire surface by a sputtering method, patterning may be performed using a resist mask, or selective formation from a nozzle may be performed by a droplet discharge method. Note that the droplet discharge method here includes not only an inkjet method but also an offset printing method and a screen printing. The wiring and the antenna may be formed at the same time, or may be formed so that the other rides on after forming one first.

  In the case where a product incorporating a thin film integrated circuit device contains a conductive material, an antenna or a wiring may be formed using the same conductive material. For example, an antenna can be formed inside a coin using a coin material. In this case, for example, when a thin film integrated circuit device is embedded in a 10-yen coin, an antenna made of an alloy of copper, zinc, and tin is preferably formed.

  Although the top gate structure is used in this embodiment, a bottom gate structure (reverse stagger structure) may be used. Note that a base insulating film material, an interlayer insulating film material, and a wiring material are mainly provided in a region where a thin film active element portion (active element) such as a TFT does not exist, and this region is the entire thin film integrated circuit device. It is desirable to occupy 50% or more, preferably 60 to 95%. This makes it easy to bend the IDF chip and facilitates handling of finished products such as ID labels. In this case, the island-shaped semiconductor region (island) of the active element including the TFT portion occupies 5 to 50%, preferably 5 to 15% of the entire thin film integrated circuit device.

Further, the S value (subthreshold value) of the TFT manufactured in this example is 0.35 V / dec or less (preferably 0.07 to 0.25 V / dec), and the mobility is 10 cm ² V / sec. It has the above. Also, at the ring oscillator level, it has a characteristic of 1 MHz or more, preferably 10 MHz or more (at 3 to 5 V), or a frequency characteristic per gate of 100 kHz or more, preferably 1 MHz or more (at 3 to 5 V). is doing.

  When a plurality of TFTs, protective films, various wirings, and an antenna integrated type are formed on the substrate 60, an antenna (these are collectively referred to as “thin film integrated circuit device 13”) is formed (FIG. 15A). Next, grooves 81 are formed by dicing in the boundary region of the thin film integrated circuit device 13 (FIG. 15B). In this case, a blade dicing method using a dicing apparatus (dicer) is generally used. The blade is a grindstone in which diamond abrasive grains are embedded, and has a width of about 30 to 50 μm. By rotating the blade at a high speed, the thin film integrated circuit is separated. An area necessary for dicing is referred to as a street, and this width is preferably set to 80 to 150 μm in consideration of damage to the element.

  In addition to dicing, scribing or etching using a mask can be used. In the case of scribing, there are a diamond scribing method and a laser scribing method. When the laser scribing method is employed, a linear laser having a pulse oscillation power of 200 to 300 W, for example, an Nd: YAG laser, from a laser resonator, a fundamental wave having an oscillation wavelength of 1064 nm or a second laser having an oscillation wavelength of 532 nm is used. Harmonics and the like can be used.

  In the case of etching, a mask pattern can be formed by exposure and development processes, and element isolation can be performed by dry etching, wet etching, or the like. In dry etching, an atmospheric pressure plasma method may be used.

  When forming the groove, the depth of the groove may be at least enough to expose the surface of the release layer, and the above dicing or the like is appropriately performed so that the substrate 60 is not damaged so that the substrate 60 can be used repeatedly. It is desirable to control.

  Next, a jig (support substrate) 83 having a protrusion 82 is attached to each thin film integrated circuit device 13 via an adhesive 84 (FIG. 15C). Here, the jig (jig) has a role of temporarily fixing the thin film integrated circuit so that the thin film integrated circuit is not separated after the peeling layer is removed. As the shape of the jig, as shown in FIG. 15C, in order to facilitate the introduction of a gas or liquid containing a halogenated fluorine later, it is desirable to have a comb-like structure provided with protrusions. A simple jig may be used. More preferably, an opening 85 for facilitating the introduction of a gas or liquid containing a halogenated fluorine later may be provided.

  As the jig, a glass substrate mainly composed of silicon oxide not affected by fluorine halide, a quartz substrate, a stainless steel (SUS) substrate, or the like can be used. However, the material is not limited as long as the material is not affected by fluorine halide. Is not to be done.

  Here, as the adhesive, a material whose adhesive strength (adhesive strength) is reduced or lost by UV light irradiation can be used. Here, a UV irradiation peeling tape manufactured by Nitto Denko Corporation was used. In addition to this, the above-described re-peelable and re-adhesive adhesive may be used. For example, an acrylic pressure-sensitive adhesive, a synthetic rubber pressure-sensitive adhesive, a natural rubber pressure-sensitive adhesive and the like described in JP-A-2001-30403, JP-A-2992092, and JP-A-6-299127 can be used. Of course, the material is not limited to these as long as the jig can be easily removed.

Next, a halogenated fluorine gas was introduced into the groove 81 to remove the a-Si film as a peeling layer by etching (FIG. 16A). Here, a low pressure CVD apparatus as shown in FIG. 21 was used, and the conditions were as follows: gas: ClF ₃ (chlorine trifluoride), temperature: 350 ° C., flow rate: 300 sccm, atmospheric pressure: 6 Torr, time: 3 hours. It is not limited to this condition. Alternatively, a gas in which nitrogen is mixed with ClF ₃ gas may be used. The flow ratio between the two can be set as appropriate. In addition to ClF ₃ , a gas such as BrF ₃ or ClF ₂ may be used.

Here, the low-pressure CVD apparatus shown in FIG. 21 has a mechanism in which a halogenated fluorine gas such as ClF ₃ gas 86 is introduced into the bell jar 100 which is a reaction space, and the gas spreads over the substrate 101. A heater 102 is provided outside the bell jar. Further, the residual gas is discharged from the exhaust pipe 103.

Here, fluorine halide such as ClF ₃ has a characteristic of selectively etching silicon, but silicon oxide (SiOx), silicon nitride (SiNx), and silicon oxynitride are hardly etched. Therefore, the peeling layer 61 is etched with time, and the substrate 60 can be finally peeled off (FIG. 16B). On the other hand, since the protective film, the interlayer film, and the protective film, which are silicon oxide, silicon nitride, silicon oxynitride, and the like, or a base film made of a heat-resistant resin, are hardly etched, damage to the thin film integrated circuit can be prevented. . The peeled substrate 60 can of course be reused, leading to cost reduction.

The release layer 61 is not limited to the silicon-based material as long as it can be removed by halogenated fluorine such as ClF ₃ . Further, the protective film and the interlayer film are not limited to the above materials as long as they are not affected by halogenated fluorine such as ClF ₃ .

  Next, the adhesive strength of the adhesive 84 is reduced or lost by performing UV light irradiation, and the jig and the thin film integrated circuit device are separated, whereby a large amount of the thin film integrated circuit device 13 can be obtained. It is desirable to reuse the jig for cost reduction.

  The thin film integrated circuit device 13 manufactured by the above method is transported by a small vacuum tweezers 24 as shown in FIG. 2 or a micro-sized pin, and can be provided at a desired position of an article such as an ID label or an ID card. it can.

Further, as a method for peeling the substrate, a method in which stress is applied to the substrate on which a plurality of thin film integrated circuits are formed and the substrate is physically peeled may be employed. In this case, W, SiO ₂ , WO ₃ or the like can be used as the release layer. In order to give stress, a shock may be given with a diamond pen or the like.

In this embodiment, the case of using a dry etching method for forming the groove 81 in FIG. 15B will be described with reference to FIG. In FIG. 17A, the state up to the state of FIG. Thereafter, through a development and exposure process, a resist 87 is formed on the substrate, and a groove 81 is formed by dry etching using the resist 87 as a mask to perform element isolation (FIG. 17A). Here, plasma etching is employed, and as the etching gas, chlorine gas such as Cl ₂ , BCl ₃ , SiCl _4, CCl _4, etc., CF ₄ , SF ₆ , NF ₃ , CHF _3, etc. are representative. fluorine-based gas, or with O _2, but is not limited thereto. The etching can also be performed using atmospheric pressure plasma. At this time, a mixed gas of CF ₄ and O ₂ is preferably used as the etching gas. Further, the groove 81 may be formed by performing etching with different gas types a plurality of times.

Next, the jig 83 is attached to the thin film integrated circuit device through the adhesive 84, and the release layer is removed by fluorine halide such as ClF ₃ supplied from the opening 85, and the substrate 60 is finally peeled off ( FIG. 17 (B)). The specific method is the same as that in the first embodiment.

  Next, the adhesive strength of the adhesive 84 is reduced or lost by performing UV light irradiation, and the jig 83 and the thin film integrated circuit device are separated, whereby a large number of thin film integrated circuit devices can be manufactured. . The thin film integrated circuit device manufactured by the above method can be transported by a small vacuum tweezers or the like and provided in a desired product.

  In this embodiment, when the groove 81 is formed by dicing or the like and the substrate 60 is damaged, a case where the substrate is reused will be described.

  As a first method, as shown in FIG. 18A, a planarizing film 89 is formed on a used substrate 88. As the planarizing film, a heat-resistant resin such as polyimide, acrylic, polyamide, or siloxane can be formed by a spin coating method, a dip method, a spray method, a droplet discharge method, or the like. Considering the heat treatment in the subsequent process, it is desirable to use a heat resistant resin such as siloxane. In addition, an inorganic material may be used, and in that case, PSG, BPSG, an alumina film, or the like can be used. Subsequent steps are the same as those in other embodiments or examples.

  As a second method, although not shown, there is a method of planarizing the substrate surface using a CMP (mechanical chemical polishing) method. This is particularly effective when the scratches on the used substrate 88 are fine. In the CMP method, a polishing solvent called slurry is supplied into a polishing pad, and planarization is performed by pressurization by rotation of a wafer carrier and rotation of a turntable called a platen and polishing of the polishing pad. Since the substrate is an insulator like a glass substrate, a slurry mixed with alkaline colloidal silica is mainly used. Subsequent steps are the same as those in other embodiments or examples.

  In this embodiment, a case where a glass substrate or a substrate other than a quartz substrate is used as a substrate to be peeled will be described.

  First, a silicon wafer 90 is prepared and heat treatment is performed to form an oxide film 91 (silicon oxide film) on the surface of the silicon wafer 90, thereby obtaining a thermally oxidized silicon substrate 92 (FIG. 18B). As a heat treatment method, for example, heat treatment at 800 to 1200 degrees (preferably about 900 ° C. or about 1150 ° C.) may be performed in the air (in an oxygen or nitrogen atmosphere), but is not limited to this temperature.

Note that the entire surface of the semiconductor substrate may be oxidized or the surface of at least one surface may be oxidized, but a thin film integrated circuit is later formed from the substrate using fluorine halide such as ClF _3. When separating, it is desirable that the entire surface of the semiconductor substrate is oxidized to form silicon oxide so that the semiconductor substrate is not affected by the halogenated fluorine. Note that the semiconductor constituting the semiconductor substrate is not limited to silicon.

Further, instead of a semiconductor substrate having an oxidized surface, a semiconductor substrate having a nitrided or oxynitrided surface may be used. For example, a substrate in which nitrogen ions are implanted on the surface of a single crystal silicon substrate or a thermally oxidized silicon substrate can be used. A substrate in which an insulating film such as silicon oxide or silicon nitride is formed on the surface of a substrate made of metal such as a stainless steel substrate (SUS substrate) can also be used.

  Thereafter, a peeling layer, a base protective film, and a TFT are formed on the oxide film 91, and the TFT is peeled off with a halogenated fluorine gas or the like. Note that the peeling may be performed by forming the TFT directly on the oxide film 91 and removing the silicon wafer 90 without providing the peeling layer and the base protective film.

  Second, a silicon wafer is prepared and oxygen ions are implanted and implanted. Then, a buried oxide film 94 is formed by performing a heat treatment at 900 to 1200 ° C. (FIG. 18C). The heat treatment temperature is not limited to this, but the heat treatment forms a buried oxide film and at the same time improves the crystallinity of the single crystal silicon (c-Si) layer 95 damaged by doping. Since there are also roles, it is necessary to adjust the heating temperature in consideration of those roles. Thus, a SIMOX substrate 96 comprising the single crystal silicon substrate 93 (lower single crystal silicon layer), the buried oxide film 94, and the single crystal silicon layer 95 (upper single crystal silicon layer) is obtained.

  Note that an SOI substrate may be obtained by doping and implanting nitrogen ions instead of oxygen ions. Although not shown, the device wafer (Si substrate, the substrate on which the device is formed) on which the oxide film is formed and the handle wafer (Si substrate) are bonded together so that the oxide film is arranged in the center. A polished substrate (so-called bonded substrate) may be used.

  Thereafter, when the TFT is manufactured, the c-Si layer 95 may be used as a semiconductor layer (active layer) of the TFT. Further, when peeling with a halogenated fluorine gas, it can be performed by removing all or a part of the c-Si substrate 93. The buried oxide film 94 functions as a protective film (base film).

  In this embodiment, a thin film integrated circuit device according to the present invention and a method for manufacturing the thin film integrated circuit device according to the present invention will be described with reference to FIGS. First, it manufactures similarly to the said Example until the state of FIG. 15 (B).

Next, in the state of FIG. 15B, with the substrate 60 on which the thin film integrated circuit device 13 is formed facing down (face down), the furnace (bell jar, FIG. 21) of the low pressure CVD apparatus provided with the tray 97 is provided. (Refer to Fig.3) and insert and fix multiple pieces. You may throw in a board | substrate and a tray simultaneously. The same applies when the low pressure CVD method is not used. When a halogenated fluorine such as ClF ₃ gas 86 is supplied to the groove 81 and the peeling layer is etched, the element-separated thin film integrated circuit device is dropped onto the tray 97 (FIG. 19A). ). However, it is necessary to fix the substrate by a frame installed in the furnace so that the substrate on which the thin film integrated circuit device is formed does not fall.

The distance between the tray 97 and the thin film integrated circuit device 13 is set to 0.5 so as to prevent the thin film integrated circuit device from which elements are separated from being separated apart from each other and to facilitate supply of halogenated fluorine such as ClF ₃ gas 86. It should be ˜1 mm. Further, in order to prevent the thin film integrated circuit device from which the elements have been separated from being separated apart, a protrusion is formed on the tray 97 according to the size of the thin film integrated circuit device as shown in FIG. Is desirable.

  After the element separation, the thin film integrated circuit device loaded on the tray is conveyed using fine pins 98 or small vacuum tweezers and transferred onto a desired product (FIG. 19B).

FIG. 20 shows a method in which a substrate 99 that also functions as the tray is used as a substrate formed before the thin film integrated circuit device is separated. For example, a plurality of substrates 101 are put into a furnace (bell jar 100) of a low pressure CVD apparatus and fixed (see FIG. 21). The same applies when the low pressure CVD method is not used. Then, when the release layer is etched using fluorine halide such as ClF ₃ , as shown in FIG. 20, the upper thin film integrated circuit device has a back surface (protrusion) of the substrate on which the lower thin film integrated circuit device is formed. It is desirable that the part is formed.

  The tray 97 and the tray / substrate 99 are a thermally oxidized silicon substrate, an SOI substrate such as a SIMOX substrate, a glass substrate, a quartz substrate, a SUS substrate, an alumina substrate, a heat-resistant flexible substrate (plastic substrate, etc.). Although various substrates can be used, it is desirable to have halogenated fluorine resistance and heat resistance.

  By using the above method, a thin film integrated circuit device can be produced in large quantities without using a jig. Note that this embodiment can be freely combined with other embodiments and examples.

  In this embodiment, a method of separately manufacturing an antenna manufactured on a flexible substrate and a thin film integrated circuit device and then connecting them will be described with reference to FIGS.

  In FIG. 22, an antenna 105 is formed on a flexible substrate 104 that can be bent, and an IDF chip 107 that is separately formed is connected to the antenna 105, and then the flexible substrate 104 is folded in half and sealed to form an ID label or an ID card. And so on. Here, the antenna 105 may be formed by a sputtering method or the like and then patterned, or after a composition including a conductive material is selectively discharged using a droplet discharge method, the composition is dried and baked. You may form by doing. Note that planarization may be improved by CMP, pressing, or the like after the antenna is formed.

  A connection pad 106 for connecting the antenna and the integrated circuit may be formed on the antenna. The connection pad may be formed on the thin film integrated circuit device side. Note that the connection between the integrated circuit and the antenna can be performed using an anisotropic conductive film, a known bonding method, or the like. Further, the shape of the antenna is not limited to the shape shown in FIG. 22 as long as it is an electromagnetic induction type and is a coil shape that is symmetrical when folded. Of course, other communication systems, such as an electromagnetic coupling type, a microwave type, and an optical communication type, can be appropriately employed.

  Note that FIG. 23D is a cross-sectional view illustrating the antenna substrate folded in the XY direction of FIG. Here, a method for connecting the folded antenna substrate and the thin film integrated circuit device will be described with reference to FIG.

  First, the peeling layer 61 is formed on the substrate 60 and the protective film 55 is formed. At this time, after the antenna substrate is folded, a connection terminal 108 connected to the lower antenna 105b is formed (FIG. 23A). Here, after forming the connection terminal by patterning the conductive film, a protective film may be formed and planarized, or the protective film may be selectively formed leaving the connection terminal portion. Alternatively, the connection terminal may be formed by discharging and embedding a conductive material by a droplet discharge method or the like.

  Next, after forming the TFTs constituting the CPU 73, the memory 74, etc. according to the above embodiment, the first interlayer film 30a is formed, and further, the contact holes are opened and the upper connection wiring for connecting to the upper antenna 105a. 109a, a lower connection wiring 109b and a wiring 51 for connection with the upper antenna 105a (connection terminal 108) are formed (FIG. 23B).

  Next, after forming the second interlayer film 30b, a contact hole is opened, and an upper connection wiring 109a for connecting to the upper antenna 105a is formed (FIG. 23C).

  Next, the IDF chip on which various wirings are formed is attached on the connection pad 106 of the flexible substrate 104 on which the antenna is formed (see FIG. 22). At this time, the connection can be made by the method shown in FIGS. Here, the connection terminal 108 and the connection pad 106 of the lower antenna 105b are connected via an anisotropic conductive film (ACF) 22. (FIG. 23D) In addition to ACF, a known bonding method, ultrasonic bonding, UV bonding, or the like may be used.

  Next, the flexible substrate 104 was folded, and the connection pad of the upper antenna and the upper connection wiring 109a were similarly connected through the ACF 22 (see FIG. 23D). Note that it is desirable to mold an epoxy resin between the antenna and the thin film integrated circuit device.

  As in this embodiment, the antenna is folded and connected to the top and bottom of the thin film integrated circuit device, so that the antenna can be formed above and below the thin film integrated circuit device. The accuracy can be improved. Note that this embodiment can be freely combined with other embodiments and examples.

  In the present embodiment, referring to FIG. 24, a method of directly bonding to a product such as an ID card without removing the jig 83 bonded to the IDF chip after element isolation with a halogenated fluorine gas will be described. To do.

First, a plurality of IDF chips 110 are formed as described in the above embodiment, and the jig 83 is attached via the adhesive 84. As the jig 83, as shown in FIG. 17, a jig having a protrusion 82 was used. Here, as the adhesive 84, a material whose adhesive strength is reduced or lost by UV light irradiation is used. In order to prevent damage to the element, a protective film 54 made of an organic material or an inorganic material is provided. Then, element isolation is performed by etching with a halogenated fluorine such as ClF ₃ .

  Next, it conveys in the state which the element | device adhere | attached on the jig 83, and aligns with the stage in which goods, such as an ID card, were installed. At this time, as shown in FIG. 24A, jigs and alignment markers 111 and 112 provided on the stage can be used. Although not shown, a marker directly formed on the product can be used. it can. An adhesive 113 is formed in advance on the portion of the product where the thin film integrated circuit device is formed (here, the card lower base 37b of the ID card), and a desired element can be obtained by controlling the position of the jig. Affixed to a desired location on the product (FIG. 24A).

  Next, the element desired to be attached to the card lower base 37b is selectively irradiated with UV light 114 through a mask to reduce or lose the adhesive force of the adhesive 84, thereby separating the jig from the element. (FIG. 24B). Thereby, a desired IDF chip 110 can be formed at a desired location of the product. After the element is formed, the element portion is covered with the card upper base 37a or the like (FIG. 24C). Although the case where the antenna 11 is formed inside the card base is shown here, the antenna may be formed in the element portion.

By using the present invention shown in this embodiment, when elements are separated by etching with a halogenated fluorine such as ClF ₃ , a desired element is formed at a desired position without being separated. Can do.

  In addition, it cannot be overemphasized that a present Example is applicable not only to an ID card but to all goods. In addition, this embodiment can be freely combined with other embodiments and examples.

  In this embodiment, a structure of a TFT when an IDF chip is installed for a product such as an ID label that can be bent in one direction will be described.

FIG. 26 shows a top view of the layer of the island-like semiconductor film 57 in the TFT of the IDF chip 110 formed on the IDF label 20.
In the island-shaped semiconductor film 57, a source region 115 to which an n-type or p-type impurity is added, a drain region 117, and a channel region 116 to which the impurity is not added are formed. The semiconductor region of at least one TFT in the IDF chip is connected to the antenna 11.

  Here, by setting the bending direction of the ID label or the like in the direction in which the source (S), channel (C), and drain (D) regions are formed, or in a direction substantially perpendicular to the crystal growth direction of the semiconductor film. When the ID label or the like is bent, the island-like semiconductor film 57 can be prevented from being cracked, and a stable TFT operation can be supplied regardless of the handling of the ID label.

  In this embodiment, a case where high-temperature polysilicon (HPS) is employed in the process of Embodiment 1 will be described. In general, a semiconductor process including a crystallization process at a heat resistant temperature (about 600 ° C.) or higher of a glass substrate is called a high temperature process.

  After the semiconductor film is formed, the above catalyst such as Ni is added and heat treatment is performed in an LPCVD furnace. At about 700 ° C. or higher, crystal nuclei are generated in the semiconductor film and crystallization proceeds.

Thereafter, after forming an island-shaped semiconductor film, a gate insulating film is formed by LPCVD. For example, an HTO (High Temperature Oxide) film is formed at a high temperature of 900 ° C. or higher using a gas obtained by mixing N ₂ or O ₂ with a silane-based gas.

  Next, a gate electrode layer is formed by depositing polysilicon (p-Si) containing an n-type impurity such as phosphorus with a thickness of 150 nm. Further, WSi (tungsten silicide) may be formed with a film thickness of 150 nm. As a formation method, a sputtering method, a CVD method, or the like can be appropriately employed. The subsequent doping process can be formed in the same manner as in Example 1.

  After the doping step, thermal activation is performed at 950 ° C. for 30 minutes to activate the impurity region. Further, reflow is performed using BPSG, and planarization is performed by an etch back method using a resist. Further, hydrogenation annealing at 350 ° C. is performed to recover plasma damage.

  Other steps can be performed in the same manner as in Example 1. Although the top gate structure is used in this embodiment, a bottom gate structure (reverse stagger structure) may be used. Note that this embodiment can be freely combined with other embodiments and examples.

In this embodiment, a case where SAS (semi-amorphous silicon) is employed as the island-like semiconductor film 57 in the process of Embodiment 1 will be described. SAS can be obtained by glow discharge decomposition of a silicide gas. A typical silicide gas is SiH ₄ , and in addition, Si ₂ H ₆ , SiH ₂ Cl ₂ , SiHCl ₃ , SiCl ₄ , SiF _{4 and the} like can be used. The formation of the SAS can be facilitated by diluting the silicide gas with one or plural kinds of rare gas elements selected from hydrogen, hydrogen and helium, argon, krypton, and neon. It is preferable to dilute the silicide gas at a dilution ratio in the range of 10 times to 1000 times. Of course, the reaction of the coating by glow discharge decomposition is performed under reduced pressure, but the pressure may be in the range of about 0.1 Pa to 133 Pa. The power for forming the glow discharge may be high frequency power of 1 MHz to 120 MHz, preferably 13 MHz to 60 MHz. The substrate heating temperature is preferably 300 ° C. or less, and a substrate heating temperature of 100 to 200 ° C. is recommended.

Further, a carbide gas such as CH ₄ and C ₂ H ₆ and a germanium gas such as GeH ₄ and GeF ₄ are mixed in the silicide gas, and the energy band width is 1.5 to 2.4 eV, or 0.8. You may adjust to 9-1.1 eV.

SAS exhibits weak n-type conductivity when an impurity element for the purpose of valence electron control is not intentionally added. This is because oxygen is easily mixed into the semiconductor film because glow discharge with higher power is performed than when an amorphous semiconductor is formed. Therefore, the threshold value can be controlled by adding an impurity element imparting p-type to the first semiconductor film provided with the channel formation region of the TFT at the same time as or after the film formation. It becomes. The impurity element imparting p-type is typically boron, and an impurity gas such as B ₂ H ₆ or BF ₃ may be mixed into the silicide gas at a rate of 1 ppm to 1000 ppm. For example, when boron is used as the impurity element imparting p-type conductivity, the concentration of boron is preferably 1 × 10 ^{14 to} 6 × 10 ¹⁶ atoms / cm ³ . A field effect mobility of 1 to 10 cm ² / V · sec can be obtained by forming a channel formation region using the SAS.

  When SAS is used, the semiconductor film crystallization step (high-temperature heat treatment step) can be omitted. In this case, the chip can be directly formed on the flexible substrate. . In the present invention, TFTs are not formed on a silicon wafer in principle, but can be used as a substrate to be peeled before being transferred to a flexible substrate or the like. Note that this embodiment can be freely combined with other embodiments and examples.

  In the present embodiment, an example of an identification product such as an ID label and an ID card according to the present invention and an example of a product attached with them will be described with reference to FIGS.

  FIG. 34A shows an example of the state of the finished product of the ID label according to the present invention. On the label mount (separate paper) 118, a plurality of ID labels 20 including the IDF chip 110 are formed. The ID label 20 is stored in the box 119. On the ID label, information on the product and service (product name, brand, trademark, trademark owner, seller, manufacturer, etc.) is recorded, while the built-in IDF chip has An ID number unique to the product (or product type) is attached, and it is possible to easily grasp illegal activities such as forgery, infringement of intellectual property rights such as trademark rights and patent rights, and unfair competition. In addition, the IDF chip contains a great deal of information that cannot be clearly stated on the container or label of the product, such as the product's production area, sales location, quality, raw material, efficacy, use, quantity, shape, price, production method, and usage method. , Production time, use time, expiration date, instruction, intellectual property information about products, etc. can be entered, and traders and consumers can access such information with a simple reader . In addition, rewriting and erasing can be easily performed from the producer side, but rewriting and erasing etc. are not possible from the trader and the consumer side.

  FIG. 34B shows an ID tag 120 with a built-in IDF chip. Product management is facilitated by providing the product with an ID tag. For example, when a product is stolen, the culprit can be quickly grasped by following the route of the product. Thus, by providing the ID tag, it is possible to distribute a product excellent in so-called traceability.

  FIG. 34C is an example of a state of a completed product of the ID card 41 according to the present invention. Examples of the ID card include all cards such as a cash card, a credit card, a prepaid card, an electronic ticket, electronic money, a telephone card, and a membership card.

  FIG. 34D is an example of a state of a completed product of the bearer bond 122 according to the present invention. The IDF chip 110 is affixed to the bearer bond 122. The bearer bonds include, but are not limited to, stamps, tickets, tickets, admission tickets, gift certificates, book tickets, stationery tickets, beer tickets, gift tickets, various gift certificates, various service tickets, etc. It is not a thing.

  FIG. 34E shows a packaging film 127 for packaging a product incorporating the IDF chip 110. The packaging films 127 can be produced by, for example, arbitrarily spreading the IDF chip on the lower layer film and covering it with the upper layer film. The packaging films 127 are accommodated in a box 129 and can be used by being cut by a cutter 128 by a desired amount. In addition, the raw material as the packaging films 127 is not particularly limited. For example, thin film resin, aluminum foil, paper, etc. can be used.

  35 (A) and 35 (B) show a book 123 and a plastic bottle 124 to which the ID label 20 according to the present invention is attached. The ID label 20 incorporates an IDF chip 110. Since the IDF chip used in the present invention is very thin, even if a thin film integrated circuit is mounted on an article such as the above-mentioned book, the function and design are not impaired. Further, in the case of a non-contact type thin film integrated circuit device, the antenna and the chip can be integrally formed, and it becomes easy to directly transfer to a product having a curved surface.

  FIG. 35C shows a state where the ID label 20 is directly attached to the fresh food of the fruits 131. FIG. 35D shows an example in which fresh foods of vegetables 130 are packaged with packaging films 127 for wrapping a product incorporating the IDF chip 110. In addition, if the ID label is attached to the product, it may be peeled off. However, if the product is wrapped with packaging films, it is difficult to remove the packaging films. There are benefits.

  In addition to the products described above, the IDF chip according to the present invention can be used for all products.

  In this embodiment, with reference to FIG. 30, a method for reading information related to a product equipped with an ID label, an ID tag, or the like according to the present invention will be described.

  A product 172 mounted with an ID label or ID tag is held over a sensor portion 171 of a reader / writer main body 170 as shown in FIG. The display unit 173 displays the raw material and origin of the product, the inspection result for each production (manufacturing) process, the history of the distribution process, and the like, and further displays information about the product such as a description of the product. Of course, it is not always necessary to provide a display unit in the reader / writer, and it may be provided separately. Such a reader / writer may be installed on a shelf on which products are displayed.

  In addition, as shown in FIG. 30B, a portable information terminal owned by an individual, for example, a mobile phone main body 180 is equipped with a reader function, and an ID label or ID tag is attached to a sensor portion 181 provided in a part of the main body. The displayed product 172 is held over and information is displayed on the display unit 183. Then, similarly, information about the product is displayed. Of course, it is not always necessary to provide a display unit in the reader / writer, and it may be provided separately.

  Further, as shown in FIG. 30C, the sensor unit 191 of the portable reader body 190 owned by an individual is held over a product 172 on which an ID label or ID tag is mounted, and information is displayed on the display unit 193. Then, similarly, information about the product is displayed. Of course, it is not always necessary to provide a display unit in the reader / writer, and it may be provided separately.

  Thus, compared with information provided by a conventional wireless tag or the like, the consumer can freely obtain abundant information regarding the product. Of course, the product management can be performed quickly and accurately by the thin film integrated circuit device.

  When a non-contact type integrated circuit device is built in the product according to the present invention, it is classified into a contact type, a proximity type, a proximity type, and a remote type depending on the distance and frequency between the product such as a card and a reader / writer. . The close contact type is an electromagnetic induction method having a communication distance of 0 to 2 mm, and uses a communication frequency of 4.92 GHz. The proximity type is an electromagnetic induction method having a communication distance of about 10 cm, and a communication frequency of 13.56 MHz is used. The proximity type is an electromagnetic induction method having a communication distance of about 70 cm, and a communication frequency of 13.56 MHz is used. The remote type is a microwave system having a communication distance of about several meters.

  The non-contact type integrated circuit is characterized by the electromagnetic induction effect (electromagnetic induction method), mutual induction effect (electromagnetic coupling method) or electrostatic induction effect (electrostatic coupling method) of the coiled antenna. Is the point that is supplied. By controlling the number of turns of the antenna, the height of the frequency to be received can be selected. For example, the number of turns of the antenna can be reduced by increasing the frequency and shortening the wavelength.

  Compared with contact type integrated circuits, non-contact type integrated circuits do not contact reader / writers, and contactless power supply and information communication, so they are not damaged, have high durability, and errors due to static electricity. There is no worry. Furthermore, the configuration of the reader / writer itself does not become complicated, and the integrated circuit only has to be held over the reader / writer, so that handling is easy.

  In the present embodiment, with reference to FIGS. 31 to 33, the management method and information of goods and the flow of goods with the ID label and ID tag according to the present invention will be described.

  First, a case where a customer purchases a product in a store will be described with reference to FIG. The product 132 displayed in the store is attached with an ID label 20 or an ID tag containing information unique to the product, information such as production history. The customer communicates with the ID label or the like attached to the product via the antenna unit 134 of the R / W 133 by holding the customer R / W 133 prepared in the store or owned by the customer over the product 132. By doing so, the information embedded in the ID label or the like can be read.

  It is desirable that the customer can freely read the information and select purchase / non-purchase with the operation keys 136. The read information is displayed on the display unit 135 provided in the R / W 133. Information includes the price of a product, consumption tax, country of origin, producer, importer, production time, expiration date, use of the product (such as a recipe for food), and the like. It is also convenient to display the total purchase amount at the time of shopping.

  Also, the customer R / W 133 is read by a POS system 137 (Points of Sales System; point-of-sales information management system (ID label, ID tag, etc. attached to a product is read by the automatic reading device when the product is sold). In other words, it is possible to directly input to a computer and connect to a system for performing sales management, customer management, inventory management, purchase management, etc., so that the barcode reading operation at a conventional cash register becomes unnecessary.

  In addition, if the R / W 133 or POS system 137 is connected to a personal account 138 such as electronic money, and the purchase amount and usage amount are automatically deducted, cashless and cashless will be achieved, and efficient. You can shop. Moreover, it is also possible to perform settlement by exchanging with the R / W on the spot using an electronic money card possessed by the individual. As such an electronic money card, of course, the ID card according to the present invention can be adopted. In addition, by providing a gate for product management at the doorway of the store, it is possible to check products that have not been input to the R / W or POS system (that is, not purchased) and prevent theft. Can do.

  Here, the flow of a product equipped with the ID label, ID tag, etc. according to the present invention will be briefly described.

  In FIG. 32A, a producer (manufacturer) provides a merchandise equipped with a thin film integrated circuit device to a seller (retailer, wholesaler, etc.) or consumer. Then, for example, the seller can provide the producer (manufacturer) with sales information such as fee information, the number of products sold and the purchase time at the time of payment by the consumer. On the other hand, consumers can provide purchase information such as personal information. For example, purchase information can be provided to sellers and producers (manufacturers) via the Internet or the like using a credit card mounted on a thin film integrated circuit device or a personal reader. Further, the seller can provide merchandise information to the consumer through the thin film integrated circuit device, and the seller can obtain purchase information from the consumer. Such sales information and purchase information are valuable information and are useful for future sales strategies.

  As a means for providing various types of information, information read by a reader of a seller or consumer from a thin film integrated circuit device is disclosed to the producer (manufacturer), seller or consumer via a computer or a network. There is a way to do it. As described above, since various kinds of information can be provided to those who need it through the thin film integrated circuit device, the ID label and the ID tag according to the present invention are also useful in merchandise transactions or merchandise management.

  On the other hand, FIG. 32B shows a case where merchandise is distributed from a consumer to a second-hand goods dealer. Again, the consumer can provide purchase information such as personal information. For example, purchase information can be provided to second-hand goods sellers via the Internet or the like using a credit card mounted on an integrated circuit device or a personal reader. In addition, the used product seller can provide merchandise information to the consumer through the integrated circuit device, and the seller can obtain purchase information from the consumer. Such sales information, purchase information, and the like are valuable information. In particular, it is possible to know the past usage status and the years of use of second-hand goods, which can be used for sales strategies such as pricing and customer selection.

  Next, a case of baggage inspection at an airport will be described with reference to FIG. The baggage 139 is provided with an ID tag 120 with a built-in IDF chip 110. The IDF chip 110 is moved by the electromagnetic wave 142 oscillated from the antenna 141 by moving on the conveyor 145 and passing through the reader / writer 140. Is activated, and the information contained in the memory is converted into a signal and sent back to the reader / writer 140, whereby the information can be recognized by the computer 143.

  In addition, the computer 143 stores information only about products (hereinafter referred to as “genuine products”) that are appropriately (legitimately) distributed to the market with ID labels or ID tags attached or IDF chips built therein. The database 144 is connected to the database 144, and the product information contained in the baggage 139 can be collated with the database 144. If the baggage 139 includes items other than genuine products, the baggage 139 can be inspected and seized, discarded, disposed of, etc. as necessary. Even if it is a genuine product, it will be detected by the computer if it contains dangerous goods or swords that are prohibited from being brought into the cabin. In that case, the baggage must not pass through the gate. You only need to program the software in the computer.

  Of course, baggage cannot pass through the gate if it contains goods that constitute illegal activities such as counterfeit goods, counterfeit goods, smuggled goods, and smuggled goods other than genuine goods. As a result, it is possible to prevent counterfeit products from flowing into or out of the country at the water's edge. Furthermore, because it can detect dangerous materials and swords, it will also help counter terrorism.

  In this embodiment, an example of communication principles such as an ID label, an ID tag, and an ID card according to the present invention will be described with reference to FIGS.

  FIG. 27 is a block diagram of an identification product such as a non-contact type integrated circuit 411 such as an ID label and a reader / writer 414. Reference numeral 400 denotes an input antenna, and 401 denotes an output antenna. Reference numeral 402 denotes an input interface, and reference numeral 403 denotes an output interface. The number of various antennas is not limited to the number shown in FIG. The shape of the antenna is not limited to a coil shape. The electromagnetic wave 412 received from the antenna 418 of the reader / writer 414 by the input antenna 400 is demodulated or DC-converted by the input interface 402, and then, via the bus 409, the CPU 404, coprocessor 405, ROM 406, RAM 407. , And supplied to various circuits such as the nonvolatile memory 408.

  Here, the coprocessor plays a role of a sub processor that assists the main CPU in controlling all processes of the thin film integrated circuit device 410. Usually, it functions as an arithmetic device dedicated to cryptographic processing, and can perform cryptographic processing required when performing applications such as payment. As the nonvolatile memory 408, EPROM, EEPROM, UV-EPROM, flash memory, FRAM (registered trademark) or the like that can rewrite information a plurality of times is preferably used.

  Depending on the function and nature of the above memory, the program memory (area where the program is stored), working memory (area where data is temporarily stored in the course of program execution), data memory (product specific) In addition to information, it is divided into areas that store fixed data handled by programs. Usually, ROM is used as the program memory and RAM is used as the working memory. The RAM also functions as a buffer during communication with the R / W. An EEPROM is usually used to store data input as a signal at a predetermined address.

  Next, the product-specific information stored in the memory is replaced with a signal in the various circuits described above, further modulated in the output interface 403, and sent to the R / W 414 by the output antenna 401. Here, the input interface 402 is provided with a rectifier circuit 420 and a demodulation circuit 421. The AC power supply voltage input from the input antenna 400 is rectified in the rectifier circuit 420 and supplied to the various circuits as a DC power supply voltage. Further, various AC signals input from the input antenna 400 are demodulated by the demodulation circuit 421. Then, various signals whose waveforms are shaped by being demodulated are supplied to various circuits.

  Further, the output interface 403 is provided with a modulation circuit 423 and an amplifier 424. Various signals input to the output interface 403 from various circuits are modulated by the modulation circuit 423, amplified or buffered by the amplifier 424, and then sent from the output antenna 401 to a terminal device such as the R / W 414. The input antenna 425 of the R / W 414 receives a signal transmitted from the non-contact type integrated circuit device, demodulates it by the input interface 426, sends it to the computer 419 via the controller 427, and stores the database 415. By performing the data processing via or without, product-specific information can be recognized.

  The computer 419 is provided with software having a function of processing information about products, but of course, information processing may be performed by hardware. As a result, the time, labor, and mistakes spent on information processing are reduced and the burden on merchandise management is reduced compared to the conventional operation of reading barcodes one by one.

  Note that the various circuits illustrated in FIG. 27 only show one embodiment, and the various circuits mounted on the non-contact type integrated circuit device 411 and the R / W 414 are not limited to the above circuits. Note that FIG. 27 illustrates an example in which an antenna is used as a non-contact type, but the non-contact type is not limited to this, and data is transmitted and received by light using a light emitting element, an optical sensor, or the like. Anyway.

  In FIG. 27, an input interface 402 and an output interface 403 including analog circuits such as a rectifier circuit 420, a demodulation circuit 421, and a modulation circuit 423, a CPU 404, various memories, and the like are formed by one thin film integrated circuit 410. In the R / W 414, the output interface 417 and the input interface 426 may be formed by the integrated circuit 416. However, this configuration is an example, and the present invention is not limited to this configuration. For example, a thin film integrated circuit in which an input interface 402 and an output interface 403 including analog circuits such as a rectifier circuit 420, a demodulation circuit 421, and a modulation circuit 423 are formed on an IC chip, and a CPU 404 and various memories are formed by TFTs. It can be formed with a circuit.

  Note that although FIG. 27 illustrates an example in which a power supply voltage is supplied from a reader / writer which is a terminal device, the present invention is not limited to this. For example, although not shown, a solar cell may be provided in a non-contact type integrated circuit device. Further, an ultra-thin battery such as a lithium battery may be incorporated.

  FIG. 28 is a perspective view showing the ID label 20 when the input antenna 400 and the output antenna 401 are separately formed. A specific manufacturing method is the same as that in Embodiment 1, but there are four terminal portions of the thin film integrated circuit device 13 and the antenna. Note that the configuration in the case where the input antenna 400 and the output antenna 401 are formed separately is not limited thereto.

  Here, the configuration of the CPU in the integrated circuit device will be briefly described with reference to FIG. FIG. 29 is a block diagram of an integrated circuit including the CPU 919, the main memory 905, and the input / output interface 914. First, the CPU 919 is required to read an instruction from the program memory 906 in the main memory 905, and therefore it is necessary to specify an address where the instruction exists via the address bus 917. At this time, the address management unit 911 designates an address for the main memory 905 as described above. Information in the main memory is performed via the control bus 918.

  When an address is designated to the program memory 906, the instruction stored in the address is output, and the output instruction is once taken into the instruction register 912 via the data bus 916 and the internal bus 915. Here, the various registers or the register group 910 are composed of working storage elements used for holding data and execution states in the CPU, and various processes in the CPU are performed using these.

  The instruction once taken into the instruction register is sent to the instruction decoder 913. The instruction decoder first translates the received instruction, replaces it with control information understandable by the control unit 900, and instructs the control unit what to do. The instruction decoder indicates the location (register or memory) of information processed by the instruction. Note that the term “translation” here refers to replacing data composed of a plurality of input signals (bits) with one specific signal.

  An instruction from the instruction decoder 913 to the control unit 900 is performed by a signal. The control unit has signal lines (control signal lines) for controlling circuits for performing various processes corresponding to the types of information, and each control signal line has a switch circuit. When this switch is on, a control signal can be output to the circuit.

  When the content of the instruction is related to the calculation, the control unit outputs a control signal for calculation processing (pulse signal for reading data) to the calculator 901. The operation register 902 that is the target of the operation is divided into two registers (A register 903 and B register 904) that are the operation target and the operation target. The roles of various memories are as described above. The input / output interface 914 plays a role of converting signals with different standards into signals that can be processed by the CPU when the CPU communicates with an external device (for example, R / W).

  The work memory 907 is an area for temporarily storing data in the course of program execution. The data memory 908 is an area for storing fixed data handled by the program. A RAM is usually used as the work memory, and functions as a work area during data processing. The RAM also functions as a buffer for communication with the R / W. An EEPROM is usually used to store data input as a signal at a predetermined address.

  In the present embodiment, an example of the configuration of the IDF chip according to the present invention will be described more specifically with reference to FIG.

  36A is a schematic diagram of an IDF chip 217, which includes a power supply circuit 214, an input / output circuit 215, an antenna circuit 216, a logic circuit 210, an amplifier 211, a clock generation circuit / decoder 212, a memory 213, and the like. . The antenna circuit 216 has an antenna wiring 201 and an antenna capacitor 202.

  The IDF chip does not have its own power source, but operates by being supplied with electric power by receiving the electromagnetic wave 218 emitted from the reader / writer 200. When the antenna circuit 216 receives the electromagnetic wave 218 from the reader / writer 200, the input / output circuit 215 including the first capacitor 203, the first diode 204, the third diode 207, the third capacitor 208, and the like. Thus, it is detected as a detection output signal. This signal is amplified to a sufficiently large amplitude by an amplifier 211, and then separated into a clock and data / command by a clock generation circuit / decoder 212. The transmitted command is decoded by a logic circuit 210, and a response of data in the memory 213 is returned. Write necessary items to the memory.

  The response is made by turning on / off the switching element 209 according to the output of the logic circuit 210. As a result, the impedance of the antenna circuit 216 changes, and as a result, the reflectance of the antenna circuit 216 changes. The reader / writer 200 reads information from the ID chip by monitoring the change in the reflectance of the antenna circuit 216.

  The electric power consumed by each circuit in the ID chip is supplied by a DC power supply VDD generated by detecting and smoothing the electromagnetic wave 218 received by the power supply circuit 214. The power supply circuit 214 includes a first capacitor means 203, a first diode 204, a second diode 205, and a second capacitor means 206. The second capacitor means 206 supplies power to each circuit. A sufficiently large value is set for this purpose.

  FIG. 36B shows an antenna circuit 1308 and a power supply circuit 1307 extracted from circuits used for the IDF chip 1309. The antenna circuit 1308 has an antenna wiring 1301 and an antenna capacitor 1302. Further, the power supply circuit 1307 includes a first capacitor unit 1303, a first diode 1304, a second diode 1305, and a second capacitor unit 1306.

  One of the features of an ID chip is that it operates without a battery. As described above, an electromagnetic wave emitted from a reader / writer is captured by an antenna circuit 1308 and rectified by a power supply circuit 1307. A circuit incorporated in the ID chip is operated.

  In the above-described embodiments or examples, the description has been mainly made on the non-contact type thin film integrated circuit device, but the thin film integrated circuit device according to the present invention can of course be applied to a contact type thin film integrated circuit device. For example, a magnetic stripe type or IC module contact type chip can be used. In the case of a contact type IC, an antenna may be omitted. Further, the magnetic stripe type or IC module contact type thin film integrated circuit device may be combined with a non-contact type thin film integrated circuit device.

  A thin film integrated circuit device typified by an IDF chip used in the present invention can be mounted on various products as well as an ID label, an ID card, and an ID tag. In addition, it can be used for banknotes, coins, bearer bonds, certificates, securities and the like. In particular, it is effective when applied to paper-like, plate-like, and wrap-like products, and these products can be produced with reference to the above-described embodiments and examples. Thus, the range of use of the present invention is extremely diverse.

The perspective view which shows the laminated structure of the ID label which concerns on this invention The figure which shows the manufacturing method of ID label which concerns on this invention (anisotropic electrically conductive film) The figure which shows the preparation methods of the ID label which concerns on this invention (adhesive layer) The figure which shows the production method of the ID label which concerns on this invention (internal cross wiring) The perspective view which shows the laminated structure of ID label based on this invention, sectional drawing (internal base | substrate) The perspective view which shows the laminated structure of the ID card based on this invention The perspective view which shows the laminated structure of the banknote which concerns on this invention, and a coin Schematic diagram showing a production line for ID labels and the like according to the present invention Schematic diagram showing a production line for ID cards, tags, etc. according to the present invention. The perspective view which shows the laminated structure of the ID label which concerns on this invention (antenna integrated type) The perspective view which shows the laminated structure of the ID card based on this invention (antenna integrated type) Cross-sectional view of a thin film integrated circuit device used for ID labels (antenna integrated type) Manufacturing process diagram of CPU and memory in thin film integrated circuit device used in the present invention Manufacturing process diagram of CPU and memory in thin film integrated circuit device used in the present invention Manufacturing process diagram of CPU and memory in thin film integrated circuit device used in the present invention Manufacturing process diagram of CPU and memory in thin film integrated circuit device used in the present invention Diagram showing element isolation method for thin film integrated circuit devices (dry etching) The figure explaining various to-be-separated substrates Diagram showing the thin film integrated circuit device peeling method (using tray) Diagram showing the thin film integrated circuit device peeling method (using tray and substrate) Schematic diagram of low pressure CVD equipment The figure explaining the case where an antenna board is folded Manufacturing process diagram of thin film integrated circuit device when antenna substrate is folded The figure explaining the method of affixing an IDF chip on a product substrate (selective UV light irradiation) The figure explaining the positional relationship between an IDF chip and a protective film The figure which shows the relationship between the S / C / D area | region formation direction of TFT, and the bending direction of a goods base | substrate. The block diagram which shows the structure of the ID label ID card based on this invention The perspective view which shows the laminated structure of the ID label which concerns on this invention (input and output antenna) A block diagram illustrating a configuration of a CPU in a thin film integrated circuit device FIG. 6 is a diagram illustrating an example of a reader / writer A figure explaining an example of product purchase in the store Diagram showing relationships with producers (manufacturers), sellers, and consumers The figure explaining the inspection method of the goods which attached the ID tag of the present invention at the time of baggage inspection The figure explaining an example of the article | item concerning this invention The figure explaining an example of goods which attached ID label etc. concerning the present invention Circuit diagram of thin film integrated circuit device used in the present invention

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Label base | substrate 11 Antenna 12 Connection pad 13 Thin film integrated circuit device 14 Print 15 Adhesive layer 16 Separator 17 Coating layer 18 Cross wiring 19 Contact part 20 ID label 21 Connection wiring 21a Connection wiring 21b Connection wiring 21c Connection wiring 22 Anisotropic conduction Film 23 TFT
24 Small vacuum tweezers 25 Pin 26 Adhesive layer 27 Insulating layer 28 Contact portion 29 TFT formation region 30a Interlayer film 30b Interlayer film 31 Protective film 32 Internal substrate 33 Surface 34 Protective layer 35 Protective layer 36 Adhesive layer 37a Card upper substrate 37b Card Lower substrate 38 Adhesive layer 39 Adhesive layer 40 Coating layer 41 ID card 42a Upper substrate 42b Lower substrate 43a Upper substrate 43b Lower substrate 44 Internal substrate 45 Film layer 46 Antenna integrated thin film integrated circuit device 47 Antenna 48 Thin film integrated circuit device 51 Wiring 51a Wiring 51b Wiring 52 Crossing wiring 53 Interlayer film 54 Protective film 54a Protective layer 55 Protective film 56 Gate electrode 57 Semiconductor layer 58 Gate insulating film 60 Substrate 61 Release layer 63 Resist 64 Impurity element 65 Low concentration impurity region 66 Resist 67 Impurity element 68 Concentration impurity region 69 n-type TFT
70 p-type TFT
73 CPU
74 Memory 75 Insulating film 76 Side wall
77 Resist 78 Impurity element 79 High-concentration impurity region 80 Terminal portion 81 Groove 82 Projection portion 83 Jig 84 Adhesive 85 Opening portion 86 Gas 87 Resist 88 Substrate 89 Planarization film 90 Silicon wafer 91 Oxide film 92 Thermal oxide substrate 93 Single crystal Silicon substrate 94 Oxide film 95 Single crystal silicon layer 96 SIMOX substrate 97 Tray 98 Pin 99 Tray / substrate 100 Belger 101 Substrate 102 Heater 103 Exhaust pipe 104 Flexible substrate 105 Antenna 105a Upper antenna 105b Lower antenna 106 Connection pad 107 IDF chip 108 Connection terminal 109a Upper connection wiring 109b Lower connection wiring 110 IDF chip 111 Alignment marker 113 Adhesive 114 UV light 115 Source region 116 Channel region 117 Drain region 118 Bell mount 119 Box 120 ID tag 122 bearer bonds 123 books 124 PET 127 wrapping film 128 cutter 129 Box 130 vegetables 131 fruits 132 Product 133 R / W
134 Antenna unit 135 Display unit 136 Operation key 137 POS system 138 Personal account 139 Baggage 140 Reader / writer 141 Antenna 142 Electromagnetic wave 143 Computer 144 Database 145 Conveyor 170 Reader / writer main unit 171 Sensor unit 172 Product 180 Mobile phone main unit 181 Sensor unit 183 Display Unit 190 reader body 191 sensor unit 193 display unit 200 reader / writer 201 antenna wiring 202 antenna capacitance 203 capacitance means 204 diode 205 diode 206 capacitance means 207 diode 208 capacitance means 209 switching element 210 logic circuit 211 amplifier 212 clock generation circuit / decoder 213 Memory 214 Power supply circuit 215 Input / output circuit 216 Antenna circuit 217 IDF chip 218 Electromagnetic Wave 300 Label paper supply means 301 ACF supply means 302 IDF chip sticking means 303 Adhesive layer supply means 304 Separate paper supply means 305 Label winding means 306 Label separating means 307 Recovery means 308 Substrate supplying means 309 Base separating means 310 Laminating apparatus 400 Input antenna 401 Output antenna 402 Input interface 403 Output interface 404 CPU
405 Coprocessor 406 ROM
407 RAM
408 Nonvolatile memory 409 Bus 410 Thin film integrated circuit device 411 Non-contact type integrated circuit device 412 Electromagnetic wave 414 Reader / writer (R / W)
415 Database 416 Integrated circuit 417 Output interface 418 Output antenna 419 Computer 420 Rectification circuit 421 Demodulation circuit 423 Modulation circuit 424 Amplifier 425 Input antenna 426 Input interface 427 Controller 900 Control unit 901 Operation unit 902 Operation register 903 A register 904 B Register 905 Main memory 906 Program memory 907 Work memory 908 Data memory 910 Register group 911 Address management unit 912 Instruction register 913 Instruction decoder 914 Input / output interface 915 Internal bus 916 Data bus 917 Address bus 918 Control bus 919 CPU
1301 Antenna wiring 1302 Antenna capacitance 1303 Capacitance means 1304 Diode 1305 Diode 1306 Capacitance means 1307 Power supply circuit 1308 Antenna circuit 1309 IDF chip

Claims (6)

An antenna,
A thin film integrated circuit device including a thin film transistor; and
A label base provided with the antenna and the thin film integrated circuit device;
An ID label having a separator attached to the label substrate through an adhesive layer,
A source, a channel, and a drain are formed in an island-shaped semiconductor film of the thin film transistor , and a direction in which the source, a channel, and a drain are formed is perpendicular to a bending direction of the ID label. ID label. A label substrate;
An antenna,
A thin film integrated circuit device including a thin film transistor; and
The antenna, and an internal substrate provided with the thin film integrated circuit device;
An ID label having a separator attached to the label substrate through an adhesive layer formed on a side surface of the internal substrate,
A source, a channel, and a drain are formed in an island-shaped semiconductor film of the thin film transistor , and a direction in which the source, a channel, and a drain are formed is perpendicular to a bending direction of the ID label. ID label. In claim 1 or claim 2 ,
A protective layer made of a single layer or a stack containing silicon oxide, silicon nitride, or silicon oxynitride is formed above and below the thin film integrated circuit device,
The ID label, wherein the thin film integrated circuit device is provided at a position within (d / 2) ± 30 μm, where d is the thickness of the entire thin film integrated circuit device and the upper and lower protective layers. In any one of Claims 1 thru | or 3 ,
An ID label, wherein a semiconductor film of the thin film transistor included in the thin film integrated circuit device contains 0.0005 to 5 atomic% of hydrogen or halogen. An antenna,
A thin film integrated circuit device including a thin film transistor; and
A card base provided with the antenna and the thin film integrated circuit device;
An ID card having a cover that covers at least the antenna and the side on which the thin film integrated circuit device is formed of the card base,
A source, a channel, and a drain are formed in the island-shaped semiconductor film of the thin film transistor , and a direction in which the source, the channel, and the drain are formed is perpendicular to a bending direction of the ID card. ID card. An antenna,
A thin film integrated circuit device including a thin film transistor; and
A base on which the antenna and the thin film integrated circuit device are provided;
An ID tag having a cover that covers at least the antenna and the side on which the thin film integrated circuit device is formed of the base body,
A source, a channel, and a drain are formed in the island-shaped semiconductor film of the thin film transistor , and a direction in which the source, the channel, and the drain are formed is perpendicular to a bending direction of the ID tag. ID tag.

Images