JP4683972B2 - Semiconductor laser device and application system including the same - Google Patents

Description

  The present invention relates to a semiconductor laser device and an application system including the same.

  High-power broad area type semiconductor laser devices can obtain a watt-class optical output and are used in the processing field and the medical field using laser light. On the other hand, in recent years, development of a semiconductor laser element that emits blue laser light having a wavelength of 405 nm for pickup of an optical disk has been advanced, and is now in a practical stage. Since the blue laser light has a large photon energy due to its short wavelength, it is expected that the range of use in the processing field and the medical field will be further expanded if a watt-class light output can be obtained. Note that the broad area type semiconductor laser element refers to a semiconductor laser element that has a wide current confinement width and emits laser light of a first-order or higher-order horizontal transverse mode.

For example, Non-Patent Document 1 discloses a broad area type semiconductor laser device using a GaInN multiple quantum well formed on a GaN substrate as an active layer (p. 123 of Non-Patent Document 1 and Non-Patent Document 1). 2). Here, the current confinement width of the semiconductor laser element is 10 μm, 50 μm, and 100 μm, and a high optical output of less than 1 watt is obtained. The p-type cladding layer of this semiconductor laser device has a multilayer structure composed of an AlGaN layer / GaN layer doped with Mg as a p-type impurity, and the n-type cladding layer is an AlGaN layer doped with Si as an n-type impurity. It is said that.
S. Goto et al, “Super high-power AlGaInN-based laser diodes with a single broad-area stripe emitter fabricated on a GaN substrate”, phys. Stat. Sol. (A) 200, No.1 (2003), p .122-125 M. TAKEYA et al, “High-power AlGaInN lasers”, phys. Stat. Sol. (A) 192, No.2 (2002), p.269-276

  According to the study of the present inventor, in the semiconductor laser device that emits laser light having a wavelength of 405 nm band using the GaInN layer disclosed in Non-Patent Document 1 as an active layer, the horizontal direction of the active layer when the laser light is emitted is It was found that the nonuniformity of the light distribution in the direction is large and the internal quantum efficiency is remarkably lowered. Even in a semiconductor laser element that emits laser light of another wavelength band using a material system other than a nitride semiconductor system, in the case of a broad area type, the laser light is emitted with a non-uniform light distribution in the horizontal direction of the active layer. However, this phenomenon is particularly noticeable in semiconductor laser devices that emit laser light having a wavelength of 405 nm using the GaInN layer as an active layer. The internal quantum efficiency is significantly lower than that of the ridge type semiconductor laser device in which the current confinement width is narrowed so as to be cut off.

  It is an object of the present invention to make the light distribution in the horizontal direction of the active layer more uniform and improve the internal quantum efficiency in a semiconductor laser element that emits laser light of a first-order or higher-order horizontal transverse mode. An object of the present invention is to provide a semiconductor laser device that can be used and an application system including the semiconductor laser device.

A semiconductor laser device according to a first aspect of the present invention includes a p-type cladding layer, an n-type cladding layer, and an active layer, and emits laser light in a first-order or higher-order horizontal transverse mode. an element, p-type cladding layer includes Mg (magnesium) as a p-type impurity, n _p <n between the average refractive index n _n the average refractive index n _p and n-type cladding layer of p-type cladding layer _n the relationship there is, in the semiconductor laser device has the current confinement structure is formed, the current confinement width of the current confinement structure is characterized der Rukoto than 100μm or less 5 [mu] m.

Here, in the semiconductor laser device according to the first aspect of the present invention, each of the p-type cladding layer and the n-type cladding layer is a single layer made of a nitride semiconductor containing Al and Ga, There may be a relationship of x _p > x _n between the Al mixed crystal ratio x _p and the Al mixed crystal ratio x _n of the n-type cladding layer.

In the semiconductor laser device of the first aspect of the present invention, the Al mixed crystal ratio x _p of the p-type cladding layer is preferably 0.1 or less.

The semiconductor laser device according to the second aspect of the present invention includes a p-type cladding layer, an n-type cladding layer, and an active layer, and emits laser light in a first-order or higher-order horizontal transverse mode. In the semiconductor laser device, the p-type cladding layer includes Mg as a p-type impurity, and in the cavity length direction, the first region and the second region are different from each other in the average refractive index of the p-type cladding layer. And the average refractive index of the p-type cladding layer in the first region is smaller than the average refractive index of the n-type cladding layer in the first region, the second region has a front end surface, and the p-type cladding in the second region the average refractive index of the front end surface of the layers Ri same der an average refractive index of the n-type cladding layer in the second region, the semiconductor laser device has the current confinement structure is formed, the current confinement width of the current confinement structure is 5μm the der Rukoto more than 100μm or less Features.

Here, in the semiconductor laser device according to the second aspect of the present invention, the p-type cladding layer in the first region and the n-type cladding layer in the first region are each a single layer made of a nitride semiconductor containing Al and Ga. Thus, there may be a relationship of x _p1 > x _n1 between the Al mixed crystal ratio x _p1 of the p-type cladding layer in the first region and the Al mixed crystal ratio x _n1 of the n-type cladding layer in the first region.

In the semiconductor laser device of the second aspect of the present invention, the Al mixed crystal ratio x _p1 of the p-type cladding layer in the first region is preferably 0.1 or less.

  In the semiconductor laser device of the second aspect of the present invention, the first region and the second region include a third region having a different average refractive index of the p-type cladding layer, and the third region has a rear end face. The average refractive index of the rear end face of the p-type cladding layer in the third region is preferably the same as the average refractive index of the n-type cladding layer in the third region.

  In the semiconductor laser device of the first and second aspects of the present invention, the active layer has a multiple quantum well structure, and the optical confinement coefficient and the multiple quantum well structure in each well layer constituting the multiple quantum well structure It is preferable that the difference from the average value of the optical confinement coefficient of all the well layers constituting is within ± 5% of the average value of the optical confinement coefficient of all the well layers.

  Furthermore, the present invention is an application system including any one of the semiconductor laser elements described above and a phosphor that emits light when irradiated with laser light emitted from the semiconductor laser element. To do.

  In the present invention, the “average refractive index of the p-type cladding layer” is defined as the refractive index of a single layer when the p-type cladding layer is a single layer. When the p-type cladding layer is composed of a plurality of layers, the average refractive index of the plurality of layers defined by the following formula (1) is shown.

Here, in Expression (1), k represents the total number of p-type cladding layers, and n _p (i) represents the refractive index of the i-th layer of the p-type cladding layer. Further, in equation (1), Γ _p (i) represents the optical confinement coefficient of the i-th layer of the p-type cladding layer, and Γ _p (i) is defined by the following equation (2).

  In Expression (2), P (x) is the light intensity distribution in the layer thickness direction. In the formula (2),

Is the integral value of the light intensity distribution in the layer thickness direction of the i-th p-type cladding layer,

Is the integral value of the light intensity distribution in the layer thickness direction of all the layers of the semiconductor laser element.

  The definition of the above “average refractive index of the p-type cladding layer” is defined as “average refractive index of the n-type cladding layer”, “average refractive index of the front end face of the p-type cladding layer” and “p-type cladding layer”. The same applies to the “average refractive index of the rear end face”.

  In the present invention, “same” includes not only completely the same case but also substantially the same case.

  According to the present invention, in a semiconductor laser device that emits a laser beam of a first-order or higher-order horizontal transverse mode, the horizontal light distribution in the active layer can be made more uniform, and the internal quantum efficiency is improved. It is possible to provide a semiconductor laser device that can be operated and an application system including the semiconductor laser device.

Example 1
FIG. 1 shows a schematic perspective view of a preferred example of the semiconductor laser device of Example 1 of the present invention. The semiconductor laser device 100 according to the first embodiment is a broad area type semiconductor laser device that emits laser light of a first-order or higher-order horizontal transverse mode, and is an Al mixed crystal of a p-type cladding layer and an n-type cladding layer. The combination of ratios is characteristic.

Here, the semiconductor laser device 100 of Example 1 includes an n-type GaN buffer layer 102 having a layer thickness of 2 μm, an n-type Al _0.045 Ga _0.955 N lower cladding layer 103 having a layer thickness of 3 μm, a layer thickness on an n-type GaN substrate 101. 0.05 μm non-doped GaN guide layer 104, 5 nm thick InGaN well layer 105a, 10 nm thick InGaN barrier layer 105b, 5 nm thick InGaN well layer 105a, 0.1 μm thick non-doped GaN guide layer 106, layer after the p-type Al _0.25 Ga _0.75 N carrier block layer 107 and the p-type Al _0.07 Ga _0.93 N upper cladding layer 108 having a thickness of 1.0μm thickness 0.01μm are sequentially grown, on p-type Al _0.07 Ga _0.93 N cladding A p-type GaN contact layer 109 having a thickness of 0.1 μm and a silicon nitride protective film 110 having a thickness of 50 nm are formed on the layer 108. Furthermore, an ohmic electrode 112 is formed by laminating a Pd layer having a thickness of 15 nm and a Mo layer having a thickness of 15 nm on the p-type GaN contact layer 109 and the silicon nitride protective film 110 in this order, and an n-type GaN substrate. It is fabricated by forming an ohmic electrode 111 formed by laminating a 5 nm thick Hf layer and a 150 nm thick Al layer in this order on the back surface of 101. Here, Mg is doped as a p-type impurity, and Si is doped as an n-type impurity.

Further, the semiconductor laser device 100 of Example 1 is provided with a silicon nitride protective film 110 to form a current confinement structure, and the current confinement width w is 20 μm. Further, both end faces of the semiconductor laser element 100 are cleaved to obtain a Fabry-Perot resonator. Here, a low reflection film (not shown) made of an Al ₂ O ₃ film having a thickness of 80 nm and a reflectivity of the emitted laser beam of 5% is formed on the cleaved front end face, and SiO 2 is formed on the rear end face. _A highly reflective film (not shown) having four pairs of _two films and a TiO ₂ film, having a thickness of ¼ of the wavelength of the emitted laser light, and having a reflectance of 95%. ) Is formed. The resonator length of the Fabry-Perot resonator (the shortest distance between the front end face and the rear end face) is 1.5 mm. Further, in the semiconductor laser device 100 of Example 1, with the p-type Al _0.07 Ga _0.93 average refractive index of the N upper cladding layer 108 n _p and n-type Al _0.045 Ga _0.955 Average refractive index n _n of N lower cladding layer 103 The refractive index difference Δn = 100 × (n _n −n _p ) / n _n [%] is + 0.5%. The active layer of the semiconductor laser device 100 of Example 1 has a multiple quantum well structure including the non-doped GaN guide layer 104, the InGaN well layer 105a, the InGaN barrier layer 105b, the InGaN well layer 105a, and the non-doped GaN guide layer 106. It has become.

  The semiconductor laser device 100 of Example 1 was mounted on a copper heat sink by junction down and enclosed in a package with excellent heat dissipation. When a current was passed through the semiconductor laser device 100 of Example 1, laser light was emitted with a threshold current of 0.6 A, and laser light with a maximum of 1.5 W was emitted.

The wavelength of this laser beam was 405 nm. When a near-field image at the time of emission of the laser light was observed, it was found that the entire surface of the current injection region in the horizontal direction of the active layer emitted light uniformly in the presence of a plurality of longitudinal modes. Further, the internal quantum efficiency η _i was 91%, and it was confirmed that laser light was emitted with a high internal quantum efficiency.

(Comparative Example 1)
For comparison, in the semiconductor laser device 100 of Example 1 shown in FIG. 1, an n-type Al _0.055 Ga _0.945 N lower cladding layer having a layer thickness of 3 μm is used instead of the n-type Al _0.045 Ga _0.955 N lower cladding layer 103 having a layer thickness of 3 μm. , The layer thickness of the non-doped GaN guide layer 104 is changed from 0.05 μm to 0.06 μm, the layer thickness of the non-doped GaN guide layer 106 is changed from 0.1 μm to 0.07 μm, and the layer thickness is 1.0 μm. Comparative example having the same configuration as the semiconductor laser device of Example 1 except that a p-type Al _0.055 Ga _0.945 N upper cladding layer having a layer thickness of 1.0 μm was used instead of the p-type Al _0.07 Ga _0.93 N upper cladding layer 108. 1 semiconductor laser device was produced.

  Here, the semiconductor laser element of Example 1 and the semiconductor laser element of Comparative Example 1 have the mixed crystal ratio and the layer thickness of each layer so that the light distribution in the vicinity of the active layer (the optical confinement coefficient of the active layer) is the same. It has an equivalent structure, such as being set.

In the semiconductor laser element of Comparative Example 1, p-type Al _0.055 Ga _0.945 average refractive index of the N upper cladding layer n _p and n-type Al _0.055 Ga _0.945 refractive index difference between the average refractive index n _n of N lower cladding layer [Delta] n = 100 × (n _n −n _p ) / n _n [%] is 0%.

  The semiconductor laser device of Comparative Example 1 was mounted on the same copper heat sink as in Example 1 by junction down, and sealed in the same package as in Example 1 having excellent heat dissipation. When a current was passed through the semiconductor laser device of Comparative Example 1, laser light was emitted with a threshold current of 1.05 A, and laser light of up to 1 W was emitted.

The wavelength of this laser beam was 405 nm. When a near-field image at the time of emission of the laser beam was observed, it was in a filament oscillation state, the light distribution was uneven, and a discrete laser beam was emitted. Even at the time of high power emission, a large deviation in the light distribution in the horizontal direction of the active layer and a non-uniform light emission pattern were observed. The internal quantum efficiency η _i was 70%, which was lower than that of the semiconductor laser device of Example 1.

(Discussion)
Hereinafter, the function and effect of the present invention will be described with reference to the semiconductor laser element of Example 1 and the semiconductor laser element of Comparative Example 1.

  Nitride semiconductor materials have problems with crystallinity, such as more crystal defects than other semiconductor materials such as AlGaAs, InGaAsP or AlGaInP on a GaAs substrate.

  In particular, in a p-type cladding layer made of p-type AlGaN containing Mg as a p-type impurity (p-type nitride semiconductor material containing Al and Ga), a large amount of Mg is doped to obtain p-type conduction. Therefore, microscopically, it seems that the crystal structure fluctuates. For this reason, the average refractive index varies microscopically in the p-type cladding layer, and in the broad area type semiconductor laser element, this causes the horizontal of the active layer within the current confinement width w. It is presumed that the adverse effect of increased light distribution bias and non-uniformity in the direction tends to appear.

  In particular, in broad-area type semiconductor laser devices where the horizontal transverse mode tends to become unstable because the higher-order horizontal transverse mode is not cut off, the fluctuation and distribution of the crystal structure within the current confinement width is the oscillation mode. Significantly affects the distribution, shape, and luminous efficiency. Even in a broad area type semiconductor laser device made of a semiconductor material such as AlGaAs, InGaAsP, or AlGaInP on a GaAs substrate with high material uniformity, filament oscillation or horizontal direction of the active layer is caused by some structural distribution or current distribution. Nitride semiconductor material with large crystallinity distribution and fluctuations, especially p-type AlGaN doped with a large amount of Mg as a p-type cladding layer The effect is significant in the type of semiconductor laser device.

In the semiconductor laser device of Example 1, the average refractive index n _{p of} the p-type cladding layer (p-type Al _0.07 Ga _0.93 N upper cladding layer 108) doped with Mg and the n-type cladding layer (n-type Al _0.045 Ga _0.955). N _p <n _n is provided between the N lower cladding layer 103) and the average refractive index n _n of the N lower cladding layer 103, and the light distribution of the laser light in the active layer is not distributed to the p-type cladding layer side. The nonuniformity of the light distribution in the horizontal direction of the active layer (direction parallel to the surface of the n-type GaN substrate 101 and perpendicular to the cavity length direction) due to the influence of the type cladding layer can be greatly reduced. . Thereby, even in the broad area type semiconductor laser device of Example 1 having a wide current confinement width in the horizontal direction of the active layer, the unevenness and unevenness of the light distribution in the horizontal direction of the active layer are improved. As a result, the gain is made more uniform over the entire current injection region in the horizontal direction of the active layer, so that the internal quantum efficiency can be increased. Here, the refractive index difference satisfying n _p <n _n is, for example, x between an Al mixed crystal ratio x _p of a single _p- type cladding layer and an Al mixed crystal ratio x _n of a single n-type cladding layer. _This is considered to hold when there is a relationship of _p > _xn .

2, the refractive index difference [Delta] n = 100 × the average refractive index n _p of the p-type cladding layer having an average refractive index n _n and Mg of n-type cladding layer in the semiconductor laser device of Example 1 is doped (n _n The relationship between −n _p ) / n _n [%] and the internal quantum efficiency η _i is illustrated. This figure shows a semiconductor laser device in which the layer structure is determined so that equivalent performance is exhibited after various combinations of the Al mixed crystal ratio of the p-type cladding layer and the Al mixed crystal ratio of the n-type cladding layer are changed. It is a comparison between them. As shown in FIG. 2, there is a tendency that a large η _i is obtained when Δn becomes a positive value.

Particularly when Δn is 0.5% or more, η _i reaches a high value. In the semiconductor laser device having such a large value of η _i , the light distribution in the horizontal direction of the active layer is made uniform, while the internal loss α _i does not change greatly. Therefore, the reason why η _i shows a high value is that, as Δn increases, the light distribution in the horizontal direction of the active layer spreads toward the Mg-doped p-type cladding layer having microscopic refractive index fluctuations and distributions. Since the light distribution in the horizontal direction of the active layer is made more uniform and the gain in the horizontal direction of the active layer is made more uniform, the average internal quantum efficiency in the current injection region is increased. This is probably due to this. In particular, when Δn is + 0.5% or more, the influence of the p-type cladding layer is sufficiently reduced, and the effect is great. Conversely, when Δn exceeds 1.5%, η _i starts to decrease. However, since Δn is too large, the vertical deviation of the light distribution becomes too large, and each well layer of the multiple quantum well structure. It is presumed that the gain is not uniform and the characteristics are deteriorated.

  The present invention is particularly effective when the current confinement width w shown in FIG. 1 is 5 μm or more and the laser beam is emitted in a first-order or higher-order horizontal transverse mode. In addition, the upper limit of the current confinement width w is preferably set to 100 μm or less in order to emit laser light efficiently.

(Example 2)
FIG. 3 shows a schematic perspective view of a preferred example of the semiconductor laser device of Example 2 of the present invention. The semiconductor laser device 300 according to the second embodiment is a broad area type semiconductor laser device that emits laser light of a first-order or higher-order horizontal transverse mode, and is an Al mixed crystal of a p-type cladding layer and an n-type cladding layer. The combination of ratios is characteristic.

Here, in the semiconductor laser device 300 of Example 2, an n-type GaN buffer layer 302 with a layer thickness of 1 μm, an n-type Al _0.03 Ga _0.97 lower cladding layer 303 with a layer thickness of 4 μm, a layer thickness of 0 on an n-type GaN substrate 301. 0.02 μm non-doped GaN guide layer 304, 5 nm thick InGaN well layer 305a, 10 nm thick InGaN barrier layer 305b, 5 nm thick InGaN well layer 305a, 0.1 μm thick non-doped GaN guide layer 306, layer thickness A p-type Al _0.06 Ga _0.94 N layer having a thickness of 0.1 μm and a layer thickness of 0.1 μm from the 0.01 μm p-type Al _0.25 Ga _0.75 N carrier blocking layer 307 and the p-type Al _0.25 Ga _0.75 N carrier blocking layer 307 side. after the p-type Al _0.1 Ga _0.9 N layer was successively grown p-type upper cladding layer 308 formed by 5 pairs alternately laminated in this order, p-type A p-type GaN contact layer 309 having a thickness of 0.1 μm and a silicon nitride protective film 310 having a thickness of 50 nm are formed on the cladding layer 308, and a 15 nm-thickness is further formed on the p-type GaN contact layer 309 and the silicon nitride protective film 310. An ohmic electrode 312 is formed by laminating a Pd layer and a 15 nm thick Mo layer in this order, and a 5 nm thick Hf layer and a 150 nm thick Al layer are formed on the back surface of the n-type GaN substrate 301. It is fabricated by forming ohmic electrodes 311 that are laminated in order. Here, Mg is doped as a p-type impurity, and Si is doped as an n-type impurity.

Further, the semiconductor laser element 300 of Example 2 has a current confinement structure formed by the silicon nitride protective film 310, and the current confinement width w is 10 μm. Further, a Fabry-Perot resonator is obtained by cleaving both end faces of the semiconductor laser device 300 of the second embodiment. Here, a low reflection film (not shown) made of an Al ₂ O ₃ film having a thickness of 80 nm and a reflectivity of the emitted laser beam of 5% is formed on the cleaved front end face, and SiO 2 is formed on the rear end face. _A highly reflective film (not shown) having four pairs of _two films and a TiO ₂ film, having a thickness of ¼ of the wavelength of the emitted laser light, and having a reflectance of 95%. ) Is formed. The resonator length of the Fabry-Perot resonator is 2 mm. The active layer of the semiconductor laser device 300 of Example 2 has a multiple quantum well structure including a non-doped GaN guide layer 304, an InGaN well layer 305a, an InGaN barrier layer 305b, an InGaN well layer 305a, and a non-doped GaN guide layer 306. It has become.

  The semiconductor laser device 300 of Example 2 was mounted on a copper heat sink by junction down and sealed in a package with excellent heat dissipation. When a current was passed through the semiconductor laser device 300 of Example 2, laser light was emitted with a threshold current of 0.4 A, and laser light of up to 2 W was emitted.

The wavelength of this laser beam was 405 nm. When a near-field image at the time of emission of the laser light was observed, it was found that the entire surface of the current injection region in the horizontal direction of the active layer emitted light uniformly in the presence of a plurality of longitudinal modes. The internal quantum efficiency η _i was 90%, and it was confirmed that the laser beam was emitted with a high internal quantum efficiency.

In the second embodiment, unlike the first embodiment, the p-type upper cladding layer 308 is formed by laminating two types of p-type AlGaN layers having different Al mixed crystal ratios. In the case of Example 2, the average Al composition ratio of the p-type upper clad layer 308 is 0.08, which is set larger than the Al composition ratio 0.03 of the n-type Al _0.03 Ga _0.97 lower clad layer 303 made of a single layer. Has been. n-type Al _0.03 Ga _0.97 refractive index difference between the average refractive index n _p of the average refractive index n _n and p-type upper cladding layer 308 of the lower cladding layer _{303 Δn = 100 × (n n} -n p) / n n [% ] Is + 1%.

In the semiconductor laser device 300 of this embodiment as described above 2, the refractive index difference between the average refractive index n _p of the n-type Al _0.03 Ga _0.97 average refractive index n _n and p-type upper cladding layer 308 of the lower cladding layer 303 is larger By being set, the entire surface of the active layer emits light uniformly, and high internal quantum efficiency can be obtained. Therefore, not only when both the p-type cladding layer and the n-type cladding layer are single layers, but also when the p-type cladding layer and / or the n-type cladding layer is a multilayer, the average refractive index of the p-type cladding layer is n-type. When the refractive index is smaller than the average refractive index of the cladding layer, the effect of the present invention can be obtained.

(Example 3)
FIG. 4 shows a schematic perspective view of a preferred example of the semiconductor laser device of Example 3 of the present invention. The semiconductor laser device 400 of the third embodiment is a broad area type semiconductor laser device that emits a laser beam of a first-order or higher-order horizontal transverse mode, and is an Al mixed crystal of a p-type cladding layer and an n-type cladding layer. In addition to the combination of the ratios, the combination of the Al mixed crystal ratios of the p-type cladding layer and the n-type cladding layer in the front end face portion of the semiconductor laser element is different from that in the central portion.

Here, in the semiconductor laser device 400 of Example 3, an n-type GaN buffer layer 402 having a layer thickness of 1 μm, an n-type Al _0.03 Ga _0.97 lower cladding layer 403 having a layer thickness of 4 μm, a layer thickness of 0 on an n-type GaN substrate 401. .01 μm non-doped GaN guide layer 404, 5 nm thick InGaN well layer 405a, 10 nm thick InGaN barrier layer 405b, 5 nm thick InGaN well layer 405a, 0.13 μm thick non-doped GaN guide layer 406, layer thickness A 0.01 μm p-type Al _0.25 Ga _0.75 carrier blocking layer 407, a 1.0 μm thick p-type Al _0.1 Ga _0.9 N first upper cladding layer 408a, and a 1.0 μm thick p-type Al _0.03 Ga _0.97 N second After sequentially growing a p-type upper cladding layer 408 composed of the upper cladding layer 408b, a p-type layer having a thickness of 0.1 μm is formed on the p-type upper cladding layer 408. A GaN contact layer 409 and a 50 nm thick silicon nitride protective film 410 are formed, and a 15 nm thick Pd layer and a 15 nm thick Mo layer are further formed in this order on the p-type GaN contact layer 409 and the silicon nitride protective film 410. And an ohmic electrode 411 formed by laminating a 5 nm thick Hf layer and a 150 nm thick Al layer in this order on the back surface of the n-type GaN substrate 401. It is made by. Here, Mg is doped as a p-type impurity, and Si is doped as an n-type impurity.

The semiconductor laser device 400 of Example 3 has a current confinement structure formed by the silicon nitride protective film 410, and the current confinement width w is 50 μm. A Fabry-Perot resonator is obtained by cleaving both end faces of the semiconductor laser element 400. Here, a low reflection film (not shown) made of an Al ₂ O ₃ film having a thickness of 80 nm and a reflectivity of the emitted laser beam of 5% is formed on the cleaved front end face, and SiO 2 is formed on the rear end face. _A highly reflective film (not shown) having four pairs of _two films and a TiO ₂ film, having a thickness of ¼ of the wavelength of the emitted laser light, and having a reflectance of 95%. ) Is formed. The resonator length of the Fabry-Perot resonator is 2 mm. The active layer of the semiconductor laser device 400 of Example 3 has a multiple quantum well structure including a non-doped GaN guide layer 404, an InGaN well layer 405a, an InGaN barrier layer 405b, an InGaN well layer 405a, and a non-doped GaN guide layer 406. It has become.

Here, in the cavity length direction of the semiconductor laser device 400 of Example 3, the region having the width D1 shown in FIG. 4 is defined as the first region, and the region having the width D2 illustrated in FIG. 4 is defined as the second region. . The width of D1 is 150 μm from the rear end face, and the width of D2 is 50 μm from the front end face. Further, the p-type Al _0.1 Ga _0.9 N first upper cladding layer 408a in the first region and the p-type Al _0.03 Ga _0.97 N second upper cladding layer 408b in the second region have different Al mixed crystal ratios. These p-type cladding layers have different average refractive indexes.

Further, the Al mixed crystal ratio x _p1 (= 0.1) of the p-type Al _0.1 Ga _0.9 N first upper cladding layer 408a in the first region and the Al _mixing of the n-type Al _0.03 Ga _0.97 lower cladding layer 403 in the first region. There is a relationship of x _p1 > x _n1 with the crystal ratio x _n1 (= 0.03). Further, the refractive index difference Δn = 100 between the average refractive index n _n1 of the n-type Al _0.03 Ga _0.97 lower cladding layer 403 and the average refractive index n _p1 of the p-type Al _0.1 Ga _0.9 N first upper cladding layer 408a in the first region. X (n _n1 −n _p1 ) / n _n1 [%] is + 1.35%. The average refractive index at the front end face of the p-type Al _0.03 Ga _0.97 N second upper cladding layer 408b in the second region is the same as the average refractive index of the n-type Al _0.03 Ga _0.97 lower cladding layer 403 in the second region. Yes.

  The semiconductor laser device 400 of Example 3 was mounted on a copper heat sink by junction down and sealed in a package with excellent heat dissipation. When a current was passed through the semiconductor laser element 400 of Example 3, laser light was emitted with a threshold current of 2A, and laser light with a maximum of 2 W was emitted.

The wavelength of this laser beam was 405 nm. When a near-field image at the time of emission of the laser light was observed, it was found that the entire surface of the current injection region in the horizontal direction of the active layer emitted light uniformly in the presence of a plurality of longitudinal modes. The internal quantum efficiency η _i was 90%, and it was confirmed that the laser beam was emitted with a high internal quantum efficiency. Further, the vertical distribution of the laser light was a Gaussian distribution.

In the semiconductor laser device 400 of Example 3, the average refractive index n _n1 of the n-type Al _0.03 Ga _0.97 lower cladding layer 403 and the average refractive index of the p-type Al _0.1 Ga _0.9 N first upper cladding layer 408a in the first region. By providing a difference in refractive index with n _p1 , the entire surface of the active layer emits light uniformly, and high internal quantum efficiency can be obtained.

In the semiconductor laser device 400 of Example 3, the average refractive index at the front end face of the p-type Al _0.03 Ga _0.97 N second upper cladding layer 408b in the second region and the n-type Al _0.03 Ga _0.97 lower cladding in the second region. The average refractive index of the layer 403 is matched. Making the front end surface portion in such a structure has the following effects. That is, the difference in refractive index between the average refractive index n _n1 of the n-type Al _0.03 Ga _0.97 lower cladding layer 403 and the average refractive index n _p1 of the p-type Al _0.1 Ga _0.9 N first upper cladding layer 408a in the first region. When provided, the light distribution in the vertical direction in the resonator is biased toward the n-type cladding layer, and the vertical light distribution in the far-field image deviates from the Gaussian distribution. If the far-field image deviates from the Gaussian distribution, it is not desirable because loss occurs during focusing using a lens or beam shaping.

Therefore, the average refractive index of the n-type Al _0.03 Ga _0.97 lower cladding layer 403 in the second region is matched with the average refractive index of the front end face of the p-type Al _0.03 Ga _0.97 N second upper cladding layer 408b. The emitted laser light is shaped to have a light distribution that is symmetrical in the vertical direction on this front end face, and as a result, the far-field image has a Gaussian distribution.

In addition, the structure of the front end surface portion functions as a so-called “window structure”. That is, the average refractive index of the front end face of the p-type Al _0.03 Ga _0.97 N second upper cladding layer 408b in the second region is matched with the average refractive index of the n-type Al _0.03 Ga _0.97 lower cladding layer 403 in the second region. Therefore, since confinement of the laser beam is weakened on the front end face of the resonator, the vertical distribution of the laser beam in the resonator spreads up and down. Therefore, since the current confinement width in the horizontal direction is wide, the light density is low even during high-power oscillation, and the light density is also low in the vertical direction only near the front end face, so that the front end face is less likely to be destroyed by light. As a result, the laser beam can be emitted at a higher output.

  In the semiconductor laser device 400 of Example 3, the average refractive index of only the front end face of the p-type cladding layer in the second region is increased to match the average refractive index of the n-type cladding layer in the second region. However, the average refractive index of the p-type cladding layer is different from that of the first region and the second region, and a third region having a rear end surface is provided, and the average refractive index of the rear end surface of the p-type cladding layer in the third region is The average refractive index of the n-type cladding layer in the region can be matched. Thereby, it becomes more effective for suppression of rear end face destruction.

(Other)
Comprising n _p <n _n relationship between the average refractive index n _n the average refractive index n _p and n-type cladding layer of p-type cladding layer is provided in the semiconductor laser device of Example 1 and Example 2 above In the semiconductor laser device of Example 3 described above, a relationship of n _p1 <n _n1 is established between the average refractive index n _p1 of the p-type cladding layer and the average refractive index n _n1 of the n-type cladding layer in the first region. Therefore, in the semiconductor laser device of the present invention, the light distribution in the vertical direction is shifted to the n-type cladding layer side. At this time, the well layer in the multi-quantum well structure of the active layer is made of these layers as in a normal semiconductor laser device in which the average refractive index of the p-type cladding layer and the average refractive index of the n-type cladding layer are substantially the same. If the layers are evenly arranged between the clad layers, the light distribution between the well layers is shifted, and a uniform gain cannot be obtained between the well layers, which may cause a decrease in internal quantum efficiency. Therefore, it is preferable to adjust the arrangement of the wells so that the light distribution between the well layers is uniform. As a result of intensive studies by the inventor, the optical confinement coefficient Γ _well (i) represented by the following formula (3) of each well layer constituting the multiple quantum well structure of the active layer and all of the multiple quantum well structures When the difference from the average value (arithmetic average) of the optical confinement coefficient of the well layer is within ± 5% of the average value of the optical confinement coefficient of all the well layers (when the following formula (4) is satisfied) It has been found that there is a tendency that good laser characteristics can be obtained.

  In Expression (3), P (x) is the light intensity distribution in the layer thickness direction. Moreover, in Formula (3),

Is an integral value of the light intensity distribution in the layer thickness direction of the i-th well layer,

Is the integral value of the light intensity distribution in the layer thickness direction of all the layers of the semiconductor laser element.

  In the semiconductor laser device of the present invention, the Al mixed crystal ratio of the p-type cladding layer tends to be set higher in order to set the average refractive index of the p-type cladding layer lower. When the Al mixed crystal ratio exceeds 0.1, the crystallinity of the p-type cladding layer is clearly deteriorated, and the internal quantum efficiency tends to decrease. Therefore, the Al mixed crystal ratio of the p-type cladding layer is 0. .1 or less is preferable.

  In the first to third embodiments, an example of a semiconductor laser element having an electrode stripe structure is shown as an example of a broad area type. For example, a ridge type structure having a wide ridge width or a buried hetero structure having a wide stripe width is shown. In the case where laser light is emitted in a first-order or higher-order horizontal transverse mode, the same problem as in the present invention arises. Therefore, the semiconductor laser device of the present invention is not limited to a broad area type, but a ridge having a wide ridge width. The present invention can also be applied to a semiconductor laser element having a buried structure having a wide mold structure or a wide stripe width.

In the semiconductor laser device of the present invention, the material of the p-type cladding layer, the n-type cladding layer and the active layer is not particularly limited as long as it is a semiconductor material, and among these, the p-type cladding layer, the n-type cladding layer and the active layer are not limited. The material of the layer is made of a nitride semiconductor material represented by a composition formula of Al _x Ga _y In _z N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ z ≦ 1, x + y + z> 0). This is preferable in that the effects of the invention can be sufficiently obtained. In the composition formula of Al _x Ga _y In _z N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ z ≦ 1, x + y + z> 0), Al represents aluminum, Ga represents gallium, In Represents indium and N represents nitrogen. In this composition formula, x represents a mixed crystal ratio of Al, y represents a mixed crystal ratio of Ga, and z represents a mixed crystal ratio of In. In addition, regarding the nitride semiconductor material represented by the composition formula of Al _x Ga _y In _z N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ z ≦ 1, x + y + z> 0), a group III element ( Boron, etc.) and group V elements (arsenic, phosphorus, bismuth, etc.) may be mixed as appropriate, and impurity elements (zinc, beryllium, tellurium, magnesium, sulfur, selenium, silicon, etc.) are included as appropriate. May be.

  In the semiconductor laser device of the present invention, each of the p-type cladding layer and the n-type cladding layer may be a single layer or a plurality of layers.

  In the semiconductor laser device of the present invention, the structure of the active layer is not particularly limited, and for example, a single quantum well structure (SQW) or a multiple quantum well structure (MQW) can be applied. Moreover, there is no restriction | limiting also regarding the strain amount or well layer thickness of the layer which comprises an active layer. Further, a compressive or tensile strain may be introduced into the barrier layer constituting the active layer.

  In the semiconductor laser device of the present invention, the wavelength of the emitted laser light is not particularly limited, and can be appropriately adjusted according to the application.

  In the semiconductor laser device of the present invention, the substrate is not particularly limited, and for example, a single crystal substrate such as a sapphire substrate, a silicon carbide substrate, a silicon substrate, or a gallium arsenide substrate can be used. In addition, when producing these substrates by crystal growth, it cannot be overemphasized that it can produce with the arbitrary crystal growth methods using arbitrary raw materials.

Example 4
FIG. 5 shows a schematic cross-sectional view of a lighting device which is a preferred example of the application system of the present invention. The illumination device 500 includes a semiconductor laser element 501, lead frames 502 and 503, lead wires 504, transparent acrylic resins 505 and 507, and a phosphor 506. Here, the lead frame 502 is provided with a cup portion, and a semiconductor laser element 501 is mounted on the bottom surface thereof. The semiconductor laser element 501 is a semiconductor laser element having the same configuration as the semiconductor laser element of the first embodiment. The lead wire 504 electrically connects the semiconductor laser element 501 and the lead frame 503, and the semiconductor laser element 501 is molded with transparent acrylic resins 505 and 507. Further, in the transparent acrylic resin 505, red (Y ₂ O ₂ S: Eu ³⁺ ), green (ZnS: Cu, Al), which absorbs laser light (excitation light) emitted from the semiconductor laser element 501, and Blue (Sr, Ca, Ba, Mg) ₁₀ (PO ₄ ) ₆ Cl ₂ : Eu ²⁺ phosphor 506 is dispersed.

  In the illuminating device having such a configuration, when laser light is emitted from the semiconductor laser element 501, laser light having an oscillation wavelength of 405 nm is irradiated onto the phosphor 506, and white fluorescence is emitted. Such an illuminating device 500 can be used as an alternative device to a fluorescent lamp or an incandescent lamp.

(Example 5)
FIG. 6 shows a schematic cross-sectional view of an optical fiber type linear illumination device which is a preferred example of the application system of the present invention. This optical fiber type linear illumination device 600 has an optical fiber portion composed of a core portion 603 and a clad portion 604, and the clad portion 604 has the same phosphor 605 as the phosphor used in the fourth embodiment. Are distributed.

  Laser light having a wavelength of 405 nm emitted from the semiconductor laser element 601 having the same configuration as that of the semiconductor laser element of the first embodiment is guided to the core part 603 of the optical fiber part through the lens 602 and propagates through the core part 603. Of the laser light propagating through the core part 603, the laser light that has penetrated into the clad part 604 is applied to the phosphor 605 to act as excitation light, and white fluorescence is emitted. By installing such an optical fiber type linear illumination device 600 on, for example, an indoor ceiling portion, a linear illumination device that can replace a mercury fluorescent lamp can be realized.

  In the illumination device of Example 4 and the optical fiber type linear illumination device of Example 5, since the semiconductor laser element of Example 1 of the present invention is used as an excitation element for a phosphor, electro-optical conversion efficiency Is excellent in that it is extremely high, has a long life, and does not contain toxic substances such as mercury. Note that the wavelength of the laser light used as the excitation light source is not necessarily 405 nm, and may be adjusted according to the absorption line of the phosphor.

  The application system of the semiconductor laser device of the present invention is not limited to the illumination device of Example 4 and the optical fiber type linear illumination device of Example 5, but a laser knife, various processing lasers, various excitation light sources, etc. The present invention can be applied to various application systems that require high-power and high-efficiency laser light. The oscillation wavelength of the semiconductor laser used as the excitation light source is not necessarily 405 nm, and may be adjusted according to the absorption line of the phosphor.

  It should be understood that the embodiments and examples disclosed herein are illustrative and non-restrictive in every respect. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

  According to the present invention, in a semiconductor laser device that emits laser light of a first-order or higher-order horizontal transverse mode, the light distribution in the horizontal direction of the active layer can be made more uniform, and the internal quantum efficiency is improved. It is possible to provide a semiconductor laser element that can be used and an application system including the semiconductor laser element.

It is a typical perspective view of a preferable example of the semiconductor laser device of Example 1 of the present invention. Refractive index difference [Delta] n = 100 × average refractive index n _n and Mg of n-type cladding layer is the mean refractive index n _p of the p-type cladding layer doped in the semiconductor laser device of Example 1 of the present invention (n _n - and _{n p) / n n [%} ], it is a diagram showing the relationship between the internal quantum efficiency eta _i. It is a typical perspective view of a preferable example of the semiconductor laser device of Example 2 of the present invention. It is a typical perspective view of a preferable example of the semiconductor laser device of Example 3 of the present invention. It is typical sectional drawing of the illuminating device which is a preferable example of the application system of this invention. It is typical sectional drawing of the optical fiber type linear illuminating device which is a preferable example of the application system of this invention.

Explanation of symbols

100, 300, 400, 501, 601 Semiconductor laser element, 101, 301, 401 n-type GaN substrate, 102, 302, 402 n-type GaN buffer layer, 103 n-type Al _0.045 Ga _0.955 N lower cladding layer, 104, 304, 404 Non-doped GaN guide layer, 105a, 305a, 405a InGaN well layer, 105b, 305b, 405b InGaN barrier layer, 106, 306, 406 Non-doped GaN guide layer, 107, 307, 407 p-type Al _0.25 Ga _0.75 N carrier blocking layer, 108 p-type Al _0.07 Ga _0.93 N upper cladding layer, 109, 309, 409 p-type GaN contact layer, 110, 310, 410 silicon nitride protective film, 111, 112, 311, 312, 411, 412 ohmic electrode, 303, 403 n-type Al _0.03 Ga _{0. 97} lower cladding layer, 308, 408 p-type upper cladding layer, 408a p-type Al _0.1 Ga _0.9 N first upper cladding layer, 408b p-type Al _0.03 Ga _0.97 N second upper cladding layer, 500 illumination device, 502, 503 lead Frame, 504 lead wire, 505, 507 transparent acrylic resin, 506, 605 phosphor, 600 optical fiber type linear illumination device, 602 lens, 603 core part, 604 clad part.

Claims (9)

A semiconductor laser device that includes a p-type cladding layer, an n-type cladding layer, and an active layer, and emits laser light in a first-order or higher-order horizontal transverse mode,
The p-type cladding layer includes Mg as a p-type impurity,
Between the average refractive index n _n of the n-type cladding layer and the mean refractive index n _p of the p-type cladding layer, n _p <n _n the relationship there is,
The semiconductor laser device has the current confinement structure is formed, the current confinement width of the current confinement structure is characterized der Rukoto than 100μm or less 5 [mu] m, the semiconductor laser element. The p-type cladding layer and the n-type cladding layer are each a single layer made of a nitride semiconductor containing Al and Ga,
Between the Al mixed crystal ratio x _n of the n-type cladding layer and the Al mixed crystal ratio x _p of the p-type cladding layer, characterized in that there is x _p> x _n the relationship, according to claim 1 Semiconductor laser device. Wherein the Al mole fraction x _p of the p-type cladding layer is 0.1 or less, the semiconductor laser device according to claim 2. A semiconductor laser device that includes a p-type cladding layer, an n-type cladding layer, and an active layer, and emits laser light in a first-order or higher-order horizontal transverse mode,
The p-type cladding layer includes Mg as a p-type impurity,
In the resonator length direction, the first region, and the first region includes a second region having a different average refractive index of the p-type cladding layer,
The average refractive index of the p-type cladding layer in the first region is smaller than the average refractive index of the n-type cladding layer in the first region,
The second region has a front end surface;
The average refractive index of the front end surface of the p-type cladding layer in the second region Ri same der an average refractive index of the n-type cladding layer in the second region,
The semiconductor laser device has the current confinement structure is formed, the current confinement width of the current confinement structure is characterized der Rukoto than 100μm or less 5 [mu] m, the semiconductor laser element. The p-type cladding layer in the first region and the n-type cladding layer in the first region are each a single layer made of a nitride semiconductor containing Al and Ga,
There is a relationship of x _p1 > x _n1 between the Al mixed crystal ratio x _p1 of the p-type cladding layer in the first region and the Al mixed crystal ratio x _n1 of the n-type cladding layer in the first region. The semiconductor laser device according to claim 4 . The semiconductor laser device according to claim 5 , wherein an Al mixed crystal ratio x _p1 of the p-type cladding layer in the first region is 0.1 or less. In the resonator length direction, the first region and the second region include a third region having a different average refractive index of the p-type cladding layer,
The third region has a rear end surface;
Wherein the average refractive index of the rear end face of the p-type cladding layer in the third region is the same as the average refractive index of the n-type cladding layer in the third region, according to any of claims 4 to 6 Semiconductor laser device. The active layer has a multiple quantum well structure, and the difference between the optical confinement coefficient in each well layer constituting the multiple quantum well structure and the average value of the optical confinement coefficients of all well layers constituting the multiple quantum well structure is: wherein said is within ± 5% of the average value of the optical confinement factor of all the well layer, a semiconductor laser device according to any one of claims 1 to 7. A semiconductor laser device according to any one of claims 1 to 8, characterized in that it comprises a phosphor that emits light by the semiconductor laser device the laser light emitted from is irradiated, application systems .

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