JP4655792B2 - Exposure condition determination method, exposure method, exposure apparatus, and device manufacturing method - Google Patents

Description

    The present invention relates to a method for determining exposure conditions for exposing a substrate through a liquid, an exposure method, an exposure apparatus, and a device manufacturing method.

    Semiconductor devices and liquid crystal display devices are manufactured by a so-called photolithography technique in which a pattern formed on a mask is transferred onto a photosensitive substrate. An exposure apparatus used in this photolithography process has a mask stage for supporting a mask and a substrate stage for supporting a substrate, and a mask pattern is transferred via a projection optical system while sequentially moving the mask stage and the substrate stage. It is transferred to the substrate. In recent years, in order to cope with higher integration of device patterns, higher resolution of the projection optical system is desired. The resolution of the projection optical system becomes higher as the exposure wavelength used is shorter and the numerical aperture of the projection optical system is larger. Therefore, the exposure wavelength used in the exposure apparatus is shortened year by year, and the numerical aperture of the projection optical system is also increasing. The mainstream exposure wavelength is 248 nm of the KrF excimer laser, but the 193 nm of the shorter wavelength ArF excimer laser is also being put into practical use. Also, when performing exposure, the depth of focus (DOF) is important as well as the resolution. The resolution R and the depth of focus δ are each expressed by the following equations.

R = k ₁ · λ / NA (1)
δ = ± k ₂ · λ / NA ² (2)
Here, λ is the exposure wavelength, NA is the numerical aperture of the projection optical system, and k ₁ and k ₂ are process coefficients. From the equations (1) and (2), it can be seen that the depth of focus δ becomes narrower when the exposure wavelength λ is shortened and the numerical aperture NA is increased in order to increase the resolution R.

If the depth of focus δ becomes too narrow, it becomes difficult to match the substrate surface with the image plane of the projection optical system, and the focus margin during the exposure operation may be insufficient. Therefore, as a method for substantially shortening the exposure wavelength and increasing the depth of focus, for example, a liquid immersion method disclosed in Patent Document 1 below has been proposed. In this immersion method, a space between the lower surface of the projection optical system and the substrate surface is filled with a liquid such as water or an organic solvent to form an immersion region, and the wavelength of exposure light in the liquid is 1 / n of that in air. (Where n is the refractive index of the liquid, which is usually about 1.2 to 1.6), the resolution is improved, and the depth of focus is expanded about n times.
International Publication No. 99/49504 Pamphlet

    By the way, when the substrate is exposed by the immersion method, the liquid condition (for example, temperature) is one of the fluctuation components of the exposure condition, so the pattern image is actually projected onto the substrate through the projection optical system and the liquid. In this case, it is conceivable to measure the liquid conditions with a measuring instrument and adjust the liquid conditions so as to obtain a desired projection state based on the measurement result. However, if there is an error in the measurement value of the measuring instrument, when the apparatus is corrected based on the measurement value, a desired projection state cannot be obtained, and the exposure accuracy may deteriorate. In particular, the state of the liquid (fluid) is dynamic, and it is not easy to measure the liquid condition with high accuracy and responsiveness.

    The present invention has been made in view of such circumstances, and a method for determining exposure conditions that can satisfactorily expose a substrate through a liquid, and an exposure method for exposing a substrate under the exposure conditions determined by the method, It is another object of the present invention to provide a device manufacturing method using the exposure method. Also, when projecting a pattern image via a projection optical system and a liquid, a method for determining exposure conditions that can satisfactorily expose the substrate in a desired projection state, and exposure for exposing the substrate under the exposure conditions determined by the method It is an object to provide a method and a device manufacturing method using the exposure method. It is another object of the present invention to provide an exposure apparatus that can satisfactorily expose a substrate in a desired projection state when exposing the substrate through a liquid, and a device manufacturing method using the exposure apparatus.

    In order to solve the above-described problems, the present invention adopts the following configuration corresponding to FIGS. 1 to 8 shown in the embodiment. However, the reference numerals with parentheses attached to each element are merely examples of the element and do not limit each element.

    In the exposure condition determining method of the present invention, the exposure condition for exposing the substrate (P) by projecting the pattern image onto the substrate (P) through the projection optical system (PL) and the liquid (LQ) is set. In this method, prior to the exposure of the substrate (P), the pattern image is sequentially projected through the projection optical system (PL) under a plurality of conditions of the liquid (LQ), and the pattern image is projected. Based on this, the exposure condition for projecting the pattern image onto the substrate (P) is determined.

    According to the present invention, a pattern image is actually projected through the projection optical system and the liquid while changing the liquid condition, and the exposure condition for projecting the pattern image on the substrate is determined based on the projection state. Therefore, the optimum exposure condition can be determined based on the actual projection state.

The exposure condition determining method of the present invention is a method for determining an exposure condition for exposing a substrate (P) by irradiating the substrate (P) with exposure light (EL) through a liquid (LQ). Prior to exposure of the substrate (P), the test substrate (Pt ₁ ) is irradiated with exposure light (EL) through the liquid (LQ) under a plurality of conditions of the liquid (LQ). ₁ ), and exposure conditions for exposing the substrate (P) are determined according to the exposure state of the test substrate (Pt ₁ ).

  According to the exposure condition determination method of the present invention, the test substrate is actually exposed through the liquid while changing the liquid condition, and the exposure condition for actually exposing the substrate is determined based on the exposure state. The optimum exposure conditions can be determined.

    The exposure method of the present invention is characterized in that the substrate (P) is exposed under the exposure conditions determined by the method described above.

    According to the present invention, the substrate can be exposed under optimum exposure conditions, so that the substrate can be exposed satisfactorily.

    The device manufacturing method of the present invention is characterized by using the exposure method described above.

    ADVANTAGE OF THE INVENTION According to this invention, a board | substrate can be exposed favorably and the device which has desired performance can be provided.

    The exposure apparatus (EX) of the present invention is a projection apparatus that exposes a substrate (P) by projecting a pattern image onto the substrate (P) through a projection optical system (PL) and a liquid (LQ). A liquid immersion mechanism (1) for forming the liquid immersion area (AR2) on the image plane side of the optical system (PL), and a liquid for forming the liquid immersion area (AR2) prior to exposure of the substrate (P) ( And a measuring device (500) for measuring the projection state of the pattern images sequentially projected under a plurality of conditions (LQ).

    According to the present invention, the measurement device that measures the projection state of the pattern image actually projected through the projection optical system and the liquid while changing the conditions of the liquid forming the liquid immersion region is provided. Based on the above, it is possible to determine the optimum exposure condition when projecting the pattern image on the substrate.

  An exposure apparatus according to the present invention is an exposure apparatus (EX) that exposes a substrate through a liquid, and a projection optical system (PL) that projects a pattern image onto the substrate through the liquid, and a plurality of different liquids And a control device (CONT) that determines an exposure condition based on the projection state of the pattern image by the projection optical system under the above condition and executes exposure under the determined exposure condition.

  In immersion exposure, since the pattern image is projected onto the substrate through the immersion area, the projection state of the pattern image may be affected by the state of the immersion area and the physical quantity of the liquid itself that forms the immersion area. There is. According to the exposure apparatus of the present invention, even in immersion exposure, the control apparatus can determine or select an optimum exposure condition in relation to the liquid, and can perform exposure under the determined exposure condition. .

  The device manufacturing method of the present invention uses the above-described exposure apparatus.

  ADVANTAGE OF THE INVENTION According to this invention, a board | substrate can be exposed favorably and the device which has desired performance can be provided.

  According to the present invention, it is possible to determine the optimum exposure condition when projecting the pattern image via the projection optical system and the liquid, so that the substrate can be satisfactorily exposed under the determined exposure condition.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a schematic block diagram showing an embodiment of an exposure apparatus according to the present invention.

  In FIG. 1, an exposure apparatus EX includes a mask stage MST that can move while supporting a mask M, and a substrate holder PH that holds a substrate P, and a substrate stage that can move while holding the substrate P in the substrate holder PH. PST, illumination optical system IL for illuminating mask M supported on mask stage MST with exposure light EL, and substrate P supported on substrate stage PST for an image of the pattern of mask M illuminated with exposure light EL A projection optical system PL for performing projection exposure, and a control device CONT for controlling overall operation of the exposure apparatus EX. Moreover, the measurement result of the shape measuring apparatus 100 that can measure the shape of the pattern (pattern line width, etc.) formed on the substrate P is output to the control device CONT. In the present embodiment, a scanning electron microscope (SEM) is used as the shape measuring device 100, but other types of measuring devices such as an electric resistance method can also be used. In addition, the shape measuring apparatus 100 may be provided in the exposure apparatus, or an apparatus separate from the exposure apparatus may be used.

  The exposure apparatus EX of the present embodiment is an immersion exposure apparatus to which an immersion method is applied in order to substantially shorten the exposure wavelength to improve the resolution and substantially widen the depth of focus. An immersion mechanism 1 for forming an immersion area AR2 of the liquid LQ on the image plane side of the PL is provided. The liquid immersion mechanism 1 includes a liquid supply mechanism 10 that supplies the liquid LQ to the image plane side of the projection optical system PL, and a liquid recovery mechanism 20 that recovers the liquid LQ on the substrate P. In the present embodiment, pure water is used as the liquid LQ. The exposure apparatus EX transfers at least a part of the substrate P including the projection area AR1 of the projection optical system PL by the liquid LQ supplied from the liquid supply mechanism 10 while at least transferring the pattern image of the mask M onto the substrate P. A liquid immersion area AR2 that is larger than the projection area AR1 and smaller than the substrate P is locally formed. Specifically, the exposure apparatus EX fills the liquid LQ between the optical element 2 at the image surface side tip of the projection optical system PL and the surface (exposure surface) of the substrate P to form an immersion area AR2. The substrate P is exposed by projecting the pattern image of the mask M onto the substrate P through the liquid LQ between the projection optical system PL and the substrate P and the projection optical system PL.

  Further, a nozzle member 70 constituting a part of the liquid immersion mechanism 1 is disposed in the vicinity of the image plane side of the projection optical system PL, specifically, in the vicinity of the optical element 2 at the end of the image plane side of the projection optical system PL. Has been. The nozzle member 70 is an annular member provided so as to surround the periphery of the front end portion of the projection optical system PL above the substrate P (substrate stage PST).

  Here, in the present embodiment, the pattern formed on the mask M is exposed to the substrate P while the mask M and the substrate P are synchronously moved in different directions (reverse directions) in the scanning direction (predetermined direction) as the exposure apparatus EX. An example of using a scanning exposure apparatus (so-called scanning stepper) will be described. In the following description, the synchronous movement direction (scanning direction, predetermined direction) of the mask M and the substrate P in the horizontal plane is the X axis direction, and the direction orthogonal to the X axis direction is the Y axis direction (non-scanning direction) in the horizontal plane. A direction perpendicular to the X-axis and Y-axis directions and coincident with the optical axis AX of the projection optical system PL is defined as a Z-axis direction. Further, the rotation (inclination) directions around the X axis, Y axis, and Z axis are the θX, θY, and θZ directions, respectively. Here, the “substrate” includes a semiconductor wafer coated with a resist, and the “mask” includes a reticle on which a device pattern to be reduced and projected on the substrate is formed.

The illumination optical system IL illuminates the mask M supported by the mask stage MST with the exposure light EL, and the exposure light source, and an optical integrator and an optical integrator for uniformizing the illuminance of the light beam emitted from the exposure light source A condenser lens that collects the exposure light EL from the lens, a relay lens system, a movable blind that sets an illumination area on the mask M by the exposure light EL, and the like. A predetermined illumination area on the mask M is illuminated with the exposure light EL having a uniform illuminance distribution by the illumination optical system IL. The exposure light EL emitted from the illumination optical system IL is, for example, far ultraviolet light (DUV light) such as bright lines (g line, h line, i line) and KrF excimer laser light (wavelength 248 nm) emitted from a mercury lamp. Alternatively, vacuum ultraviolet light (VUV light) such as ArF excimer laser light (wavelength 193 nm) and F ₂ laser light (wavelength 157 nm) is used. In this embodiment, ArF excimer laser light is used. As described above, the liquid LQ in the present embodiment is pure water and can be transmitted even if the exposure light EL is ArF excimer laser light. The pure water can also transmit bright ultraviolet rays (g-rays, h-rays, i-rays) and far ultraviolet light (DUV light) such as KrF excimer laser light (wavelength 248 nm).

  The mask stage MST can move while holding the mask M, can move two-dimensionally in a plane perpendicular to the optical axis AX of the projection optical system PL, that is, in the XY plane, and can be rotated slightly in the θZ direction. The mask stage MST is driven by a mask stage driving device MSTD such as a linear motor. The mask stage driving device MSTD is controlled by the control device CONT. A movable mirror 40 is provided on the mask stage MST. A laser interferometer 41 is provided at a position facing the movable mirror 40. The two-dimensional position and rotation angle of the mask M on the mask stage MST are measured in real time by the laser interferometer 41, and the measurement result is output to the control unit CONT. The control device CONT drives the mask stage driving device MSTD based on the measurement result of the laser interferometer 41, thereby positioning the mask M supported by the mask stage MST.

  The projection optical system PL projects and exposes the pattern of the mask M onto the substrate P at a predetermined projection magnification β, and includes a plurality of optical elements including an optical element (lens) 2 provided at the front end portion on the substrate P side. These optical elements are supported by a lens barrel PK.

  The projection optical system PL includes, for example, the projection optical system PL disclosed in Japanese Patent Application Laid-Open No. 60-78454, Japanese Patent Application Laid-Open No. 11-195602, International Publication No. 03/65428, etc. An imaging characteristic control device 3 capable of adjusting the imaging characteristics (optical characteristics) is provided. The imaging characteristic control device 3 includes an optical element driving mechanism that can move a part of a plurality of optical elements constituting the projection optical system PL. The optical element drive mechanism includes a plurality of extendable drive elements (for example, piezoelectric elements) that can be independently driven on a support frame that supports a specific optical element among a plurality of optical elements constituting the projection optical system PL. Prepare. By extending or contracting these drive elements with the same or different displacement amounts, a specific optical element can be moved in the optical axis AX direction (Z direction) or tilted with respect to the optical axis AX. The amount of expansion / contraction can be detected by a capacitance type or optical position sensor. Therefore, it is possible to adjust the imaging state of the projection optical system PL by controlling the amount of expansion / contraction of the drive element and displacing the specific optical element so as to achieve the target position and tilt angle. As will be described later, when the imaging state of the projection optical system PL is optimized, the control control CONT obtains a correction amount by the imaging characteristic control device 3, and drives the drive element according to the correction amount to specify the correction amount. The optical element is displaced. Further, the imaging characteristic control device 3 can vary the pressure in the space between the optical elements. By controlling the imaging characteristic control device 3 using the control device CONT, the projection state such as various aberrations (projection magnification, distortion, spherical aberration, etc.) and image plane position (focus position) of the projection optical system PL is adjusted. be able to.

  In the present embodiment, the projection optical system PL is a reduction system having a projection magnification β of, for example, 1/4, 1/5, or 1/8. Note that the projection optical system PL may be either an equal magnification system or an enlargement system. The projection optical system PL can use not only a refraction system that does not include a reflection element, but also a reflection system that does not include a refraction element, and a catadioptric system that includes a refraction element and a reflection element. Further, the optical element 2 at the tip of the projection optical system PL of the present embodiment is exposed from the lens barrel PK, and the liquid LQ in the liquid immersion area AR2 is in contact with the optical element 2.

  The substrate stage PST includes a Z stage 52 that holds the substrate P via a substrate holder PH, and an XY stage 53 that supports the Z stage 52. The XY stage 53 is supported on the base 54. The substrate stage PST is driven by a substrate stage driving device PSTD such as a linear motor. The substrate stage driving device PSTD is controlled by the control device CONT. The Z stage 52 can move the substrate P held by the substrate holder PH in the Z-axis direction and in the θX and θY directions (inclination directions). The XY stage 53 can move the substrate P held by the substrate holder PH in the XY direction (direction substantially parallel to the image plane of the projection optical system PL) and the θZ direction via the Z stage 52. Needless to say, the Z stage and the XY stage may be provided integrally.

  A recess 50 is provided on the substrate stage PST, and the substrate holder PH is disposed in the recess 50. Then, the upper surface 51 of the substrate stage PST other than the recess 50 is a flat surface that is substantially the same height (level) as the surface of the substrate P held by the substrate holder PH. Upper surface 51 of substrate stage PST has liquid repellency with respect to liquid LQ. Since the upper surface 51 that is substantially flush with the surface of the substrate P is provided around the substrate P, the liquid LQ is held on the image surface side of the projection optical system PL even when the edge region E of the substrate P is subjected to immersion exposure. The liquid immersion area AR2 can be formed satisfactorily.

  A movable mirror 42 is provided on the side surface of the substrate stage PST (Z stage 52). A laser interferometer 43 is provided at a position facing the moving mirror 42. The two-dimensional position and rotation angle of the substrate P on the substrate stage PST are measured in real time by the laser interferometer 43, and the measurement result is output to the control device CONT. Based on the measurement result of the laser interferometer 43, the control device CONT supports the substrate stage PST by driving the XY stage 53 via the substrate stage drive device PSTD within the two-dimensional coordinate system defined by the laser interferometer 43. The substrate P is positioned in the X-axis direction and the Y-axis direction.

  Further, the exposure apparatus EX includes a focus detection system 4 that detects surface position information on the surface of the substrate P. The focus detection system 4 includes a light projecting unit 4A and a light receiving unit 4B, and projects the detection light La from the light projecting unit 4A through the liquid LQ onto the surface (exposure surface) of the substrate P from an oblique direction. The surface position information on the surface of the substrate P is detected by receiving the reflected light from P by the light receiving unit 4B via the liquid LQ. The control device CONT controls the operation of the focus detection system 4 and detects the position (focus position) in the Z-axis direction of the surface of the substrate P with respect to the image plane of the projection optical system PL based on the light reception result of the light receiving unit 4B. . Further, the focus detection system 4 can also determine the posture of the substrate P in the tilt direction by determining the focus positions at a plurality of points on the surface of the substrate P. As the configuration of the focus detection system 4, for example, the one disclosed in JP-A-8-37149 can be used.

  The control device CONT drives the Z stage 52 of the substrate stage PST via the substrate stage driving device PSTD, so that the position (focus position) of the substrate P held by the Z stage 52 in the Z-axis direction, and θX, θY Control position in direction. That is, the Z stage 52 operates based on a command from the control device CONT based on the detection result of the focus detection system 4, and controls the focus position (Z position) and tilt angle of the substrate P to control the surface of the substrate P (exposure). Is adjusted to the image plane formed via the projection optical system PL and the liquid LQ.

  The liquid supply mechanism 10 of the liquid immersion mechanism 1 is for supplying the liquid LQ to the image plane side of the projection optical system PL, and is supplied to the liquid supply unit 11 capable of delivering the liquid LQ and the liquid supply unit 11 And a supply pipe 13 for connecting one end. The other end of the supply pipe 13 is connected to the nozzle member 70. The liquid supply unit 11 includes a tank that stores the liquid LQ, a filter unit that removes foreign matter in the liquid LQ, a pressure pump, and the like. The liquid supply unit 11 includes a temperature adjustment device 14 that adjusts the temperature of the liquid LQ. The temperature of the liquid LQ supplied to the image plane side of the projection optical system PL is adjusted by the temperature adjustment device 14. In the present embodiment, in the initial state, the temperature control device 14 sets the temperature of the liquid LQ to 23.0 ° C., and adjusts the temperature of the liquid LQ every 10 mK based on a command from the control device CONT. Can do.

  Further, in the middle of the supply pipe 13 of the liquid supply unit 11, a flow rate control called a mass flow controller that controls the amount of liquid delivered from the liquid supply unit 11 and supplied to the image plane side of the projection optical system PL. A vessel 16 is provided. Control of the liquid supply amount using the flow rate controller 16 is performed under a command signal of the control device CONT.

  The liquid recovery mechanism 20 of the liquid immersion mechanism 1 is for recovering the liquid LQ on the image plane side of the projection optical system PL, and includes a liquid recovery unit 21 that can recover the liquid LQ, and a liquid recovery unit 21. And a recovery pipe 23 for connecting one end. The other end of the recovery pipe 23 is connected to the nozzle member 70. The liquid recovery unit 21 includes, for example, a vacuum system (a suction device) such as a vacuum pump, a gas-liquid separator that separates the recovered liquid LQ and gas, and a tank that stores the recovered liquid LQ. The exposure apparatus EX is not provided with at least a part of the tank, the filter unit, the pressure pump and the temperature control device 14 of the liquid supply unit 11, the vacuum system of the liquid recovery unit 21, the gas-liquid separator, the tank, and the like. The equipment of the factory where the exposure apparatus EX is arranged may be used.

  Of the plurality of optical elements constituting the projection optical system PL, a nozzle member 70 is disposed in the vicinity of the optical element 2 in contact with the liquid LQ. The nozzle member 70 is an annular member provided so as to surround the side surface of the optical element 2 above the substrate P (substrate stage PST). A gap is provided between the nozzle member 70 and the optical element 2, and the nozzle member 70 is supported by a predetermined support mechanism so as to be vibrationally separated from the optical element 2. The lower surface 70A of the nozzle member 70 faces the surface of the substrate P (the upper surface of the substrate stage PST). Each of the lower surface 70A of the nozzle member 70 and the lower surface 2A of the optical element 2 is substantially flat, and the lower surface 70A of the nozzle member 70 and the lower surface 2A of the optical element 2 are substantially flush with each other. Thereby, the liquid immersion area AR2 can be satisfactorily formed within a desired range. Further, a liquid contact surface (lower surface) 2A that contacts the liquid LQ in the liquid immersion area AR2 in the optical element 2 and a liquid contact surface (lower surface) 70A that contacts the liquid LQ in the liquid immersion area AR2 in the nozzle member 70 are: It is lyophilic with respect to the liquid LQ.

  A liquid supply port 12 that supplies the liquid LQ onto the substrate P is provided on the lower surface 70 </ b> A of the nozzle member 70. A plurality of liquid supply ports 12 are provided on the lower surface 70 </ b> A of the nozzle member 70. In addition, an internal flow path that connects the other end of the supply pipe 13 and the liquid supply port 12 is formed inside the nozzle member 70.

  Further, a liquid recovery port 22 for recovering the liquid LQ on the substrate P is provided on the lower surface 70A of the nozzle member 70. In the present embodiment, the liquid recovery port 22 is provided outside the optical axis AX of the optical element 2 so as to surround the liquid supply port 12 on the lower surface 70 </ b> A of the nozzle member 70. In addition, an internal flow path that connects the other end of the recovery pipe 23 and the liquid recovery port 22 is formed inside the nozzle member 70.

  The operations of the liquid supply unit 11 and the liquid recovery unit 21 are controlled by the control device CONT. When the liquid immersion area AR2 of the liquid LQ is formed on the substrate P, the control device CONT sends out the liquid LQ from the liquid supply unit 11, and the substrate P is supplied via the supply pipe 13 and the internal flow path of the nozzle member 70. The liquid LQ is supplied onto the substrate P from the liquid supply port 12 provided above the substrate. Further, the liquid LQ on the substrate P is recovered from the liquid recovery port 22 and is recovered by the liquid recovery unit 21 via the recovery flow path of the nozzle member 70 and the recovery pipe 23. Note that the configuration of the liquid immersion mechanism 1 such as the nozzle member 70 is not limited to the above-described one. For example, European Patent Publication No. 1420298, International Publication No. 2004/055803, International Publication No. 2004/057589, Those described in International Publication No. 2004/057590 and International Publication No. 2005/0295559 can also be used.

  Further, a temperature sensor 60 for measuring the temperature of the liquid LQ in the liquid immersion area AR2 is provided at a predetermined position of the nozzle member 70. The temperature sensor 60 is provided at a position on the lower surface 70A of the nozzle member 70 that contacts the liquid LQ in the liquid immersion area AR2. The temperature sensor 60 only needs to be provided at a position in contact with the liquid LQ. For example, the temperature sensor 60 can be provided inside the liquid supply port 12 or at a position in the optical element 2 that does not interfere with the optical path of the exposure light EL. Further, a plurality of temperature sensors 60 may be arranged, or may be provided inside the supply pipe 13 or inside the collection pipe 23. Of course, a temperature sensor can be arranged at each of these positions. The measurement result of the temperature sensor 60 is output to the control device CONT.

  In addition, the exposure apparatus EX is a spatial image measurement capable of measuring the imaging characteristics (optical characteristics) of the projection optical system PL as disclosed in, for example, Japanese Unexamined Patent Application Publication Nos. 2002-14005 and 2002-198303. A device 500 is provided. The aerial image measurement apparatus 500 includes a light receiver 503 that receives light (exposure light EL) that has passed through the projection optical system PL via a light receiving unit 501 having a slit portion disposed on the image plane side of the projection optical system PL. I have. The upper surface of the light receiving unit 501 is substantially flush with the upper surface 51 of the substrate stage PST.

  The aerial image measurement apparatus 500 is not only for imaging characteristics such as spherical aberration, image plane (focal position), coma aberration, astigmatism, distortion, and magnification disclosed in the above-mentioned publication, but also the vibration state of the pattern image. Can also be measured.

  FIG. 2 is a plan view of the substrate stage PST as viewed from above. On the substrate stage PST, a light receiving unit 501 of the aerial image measurement device 500 is provided at a predetermined position outside the substrate P. The light receiving portion 501 has a slit portion 502 that is an opening pattern, and light irradiated on the light receiving portion 501 can pass through the slit portion 502. The light transmitted through the slit portion 502 is guided to a light receiver 503 (see FIG. 1) provided outside the substrate stage PST via a relay optical system or the like. The light receiver 503 includes a photoelectric conversion element, and a photoelectric conversion signal from the light receiver 503 is output to the control device CONT via a signal processing device.

  In the present embodiment, the light receiving unit 501 of the aerial image measurement device 500 is provided on the substrate stage PST that supports the substrate P, but it is only necessary to be disposed on the image plane side of the projection optical system PL. For example, as disclosed in JP-A-11-135400, it is provided on a predetermined member (for example, a measurement stage different from the substrate stage) other than the substrate stage PST disposed on the image plane side of the projection optical system PL. It may be done.

  Although not shown, an illuminance unevenness sensor as disclosed in, for example, Japanese Patent Application Laid-Open No. 57-117238, Japanese Patent Application Laid-Open No. 11-16816 is provided at a predetermined position outside the substrate P on the substrate stage PST. A dose sensor (illuminance sensor) as disclosed in the publication is also provided.

Next, a method for exposing the substrate P using the exposure apparatus EX having the above-described configuration will be described with reference to the flowchart of FIG. In the present embodiment, prior to exposure of the substrate P, exposure conditions for obtaining a pattern image in an optimal projection state are determined. In this embodiment, a method for determining the temperature condition of the liquid LQ and the focal position and spherical aberration that are easily affected by the temperature of the liquid LQ will be described as exposure conditions. Specifically, a plurality (N) of different temperatures T _{1 to} T _N are set as the temperature of the liquid LQ, and different test substrate test substrates Pt _{1 to} Pt _N are prepared for each temperature. Then, in the nth temperature condition (n = 1 to N), the liquid LQ is focused on the imaging characteristics (focal point) of the projection optical system PL at each of a plurality of different positions on the nth test substrate (n = 1 to N). Test exposure is performed to project a test pattern image while changing the position and spherical aberration). Then, this test exposure is performed for each of the first to Nth temperature conditions of the liquid LQ, and the device pattern image is formed on the substrate P for manufacturing the device based on the projection state of the projected test pattern image. The exposure conditions for projecting are determined.

Prior to exposure of the substrate P, the control device CONT first loads (loads) the first test substrate Pt ₁ onto the substrate stage PST (step SA1). A test mask Mt having a test pattern is supported on the mask stage MST. Needless to say, the test substrate used in this embodiment is coated with a photoresist on the surface in the same manner as the actual substrate P.

  FIG. 4 is a diagram illustrating an example of the test mask Mt. As shown in FIG. 4, two test patterns PM1 and PM2 are formed on the test mask Mt. Each of the first and second test patterns PM1 and PM2 is a line and space (L / S) pattern having a different pitch (period). The first test pattern PM1 is an L / S pattern having periodicity in the X-axis direction and a ratio (duty ratio) of the width of the line portion to the width of the space portion is 1: 1. The second test pattern PM2 is an L / S in which line patterns having the same dimensions as the first test pattern PM1 are arranged in the X-axis direction at different periods (for example, about 1.5 to 2 times the pitch of the first test pattern PM1). It is a pattern.

The control device CONT uses the temperature control device 14 of the liquid supply mechanism 10 to measure the temperature of the liquid LQ supplied between the projection optical system PL and the first test substrate Pt ₁ , as measured by the temperature sensor 60. adjusted to a first temperature T _1, the first temperature T the liquid LQ of the liquid immersion area AR2 which is adjusted to ₁ to form between the projection optical system PL and the first test substrate Pt ₁ (Step SA2).

Then, the control unit CONT, via the liquid LQ is set to a temperature T ₁ and the projection optical system PL, while changing the imaging characteristics of the projection optical system PL, and the test mask Mt test pattern image Then, it sequentially projects each of a plurality of different positions on the first test substrate Pt ₁ (Step SA3). In the present embodiment, the control device CONT uses the imaging characteristic control device 3 to change the focus position and the spherical aberration of the imaging characteristics of the projection optical system PL while changing the first test pattern image. Projection is sequentially performed on each of a plurality of different positions on the test substrate Pt ₁ . When sequentially projecting test pattern images while changing the imaging characteristics of the projection optical system PL on each of a plurality of different positions on the first test substrate Pt ₁ , the control device CONT performs the Z-axis direction of the first test substrate Pt _1. The test pattern image is sequentially projected to each of a plurality of different positions on the first test substrate Pt ₁ while sequentially moving the first test substrate Pt ₁ in the X-axis direction and the Y-axis direction while maintaining the position of To do.

As shown in FIG. 5, a plurality of shot regions SH are set in a matrix on the first test substrate Pt ₁ , and each shot region SH has a first temperature condition T ₁ of the liquid LQ. The test pattern images are sequentially projected while changing the imaging characteristics of the projection optical system PL. When projecting a test pattern image of the test mask Mt, the control unit CONT, the one shot area SH of the first test substrate Pt _1, each of the image and the image of the second test pattern PM2 of the first test pattern PM1 Project. Then, the control device CONT uses the imaging characteristic control device 3 to focus out of the imaging characteristics of the projection optical system PL with respect to, for example, the column direction (X-axis direction in FIG. 5) among the plurality of shot regions SH. The test pattern image is sequentially projected while changing the position, and the test pattern image is sequentially projected while changing the spherical aberration among the imaging characteristics of the projection optical system PL in the row direction (Y-axis direction in FIG. 5). As shown in FIG. 5, in the present embodiment, each of the focal position condition and the spherical aberration condition of the projection optical system PL is changed to five different conditions, but an arbitrary number of conditions such as 11 conditions, for example. Can be changed to

The first test substrate Pt ₁ onto which the test pattern image is projected on each shot area SH is unloaded from the substrate stage PST. Thereafter, the first test substrate Pt ₁ is developed, and an uneven test pattern according to the test pattern image is formed on the substrate. Next, the shape measuring apparatus 100 measures the shape (line width) of the test pattern formed in each shot area SH on the first test substrate Pt ₁ (step SA4). A projection state of the test pattern image projected onto the first test substrate Pt _1, because the corresponding to the shape of the test pattern formed as actually uneven pattern on the first test on the substrate Pt _1, the shape measuring apparatus 100 Each test pattern image when the test pattern image is sequentially projected on the first test substrate Pt ₁ while changing the imaging characteristics (focal position and spherical aberration) by measuring the shape (line width) of the test pattern using The projection state is measured. The measurement result of the shape measuring apparatus 100 is output to the control apparatus CONT.

The control unit CONT, from among the test patterns formed on the respective shot areas SH of the first test substrate Pt _1, at the first temperature condition T ₁ of the liquid LQ, the optimal projection optical system PL and the liquid LQ The amount of correction by the imaging characteristic control device 3 that can obtain the relationship between the image plane formed through the above and the surface of the test substrate Pt ₁ , that is, the optimum focus position condition is obtained. When a line pattern is projected onto the first test substrate Pt ₁ under the optimum focus position condition, the contrast of the projected image on the first test substrate Pt ₁ is maximized, and the line pattern formed on the first test substrate Pt ₁ The line width becomes the narrowest (the pattern shape becomes sharp). Therefore, the control device CONT determines the line width from the line patterns (test patterns) formed in each of the plurality of shot regions SH on the first test substrate Pt ₁ based on the measurement result of the shape measuring device 100. Is obtained by obtaining a shot area SH having the thinnest line pattern and projecting a line pattern image onto the shot area SH, and thus an imaging characteristic for obtaining the imaging characteristic (focal position). The correction amount by the control device 3 can be obtained. Note that the shot region SH having a line pattern having a desired line width may be obtained without being limited to the shot region having the line pattern with the narrowest line width.

  When the control device CONT obtains the optimum focus position condition, the optimum result is determined based only on the image of one test pattern among the images of the first and second test patterns PM1 and PM2 projected on each shot region SH. An image position condition can also be obtained.

Further, the control device CONT selects the projection optical system PL and the liquid LQ under the first temperature condition T ₁ of the liquid LQ from among the test patterns formed in each of the shot regions SH on the first test substrate Pt _1. The amount of correction by the imaging characteristic control device 3 that can obtain the optimum spherical aberration condition that minimizes the spherical aberration via the above, and hence the optimum spherical aberration condition. In general, since a diffraction angle is different between a pattern with a large pitch and a pattern with a small pitch on the mask, the imaging position in the optical axis direction (Z-axis direction) differs between a pattern with a large pitch and a pattern with a small pitch. Spherical aberration is one of the aperture aberrations of an optical system. When a light beam having various apertures from an object point on the optical axis is incident on the optical system, the corresponding image point does not form a single point. This aberration is caused by this. Therefore, the difference is the smallest state of the optimum focus position Z ₂ of the optimum focus position Z ₁ and second test pattern PM2 of the first test pattern PM1, i.e. a line width of the first test pattern PM1 formed in the test substrate The state in which the difference from the line width of the second test pattern PM2 is the smallest is the optimum spherical aberration condition that minimizes the spherical aberration. Therefore, the control unit CONT based on the measurement result of the shape measuring apparatus 100, the first formed in each of the plurality of shot areas SH of the first test substrate Pt _1, of the second test pattern PM1, PM2 Thus, the shot area SH having the first and second test patterns PM1 and PM2 having the smallest line width difference is obtained, and the result of projecting the images of the first and second test patterns PM1 and PM2 onto the shot area SH is obtained. The correction amount by the image formation characteristic control device 3 for obtaining the image characteristic (spherical aberration) and by extension the image formation characteristic (spherical aberration) can be obtained.

Then, the control device CONT has the narrowest line width among the patterns formed on the first test substrate Pt ₁ under the first temperature condition T ₁ of the liquid LQ, and the first test pattern PM 1 and the second test pattern PM 2. The optimum image forming characteristic condition (optimal focal position condition and optimum spherical aberration condition) that minimizes the line width difference between the image forming apparatus and the optimum correction amount of the image forming characteristic control apparatus 3 that can obtain the optimum image forming characteristic condition is: storing the first in association with the temperature condition _{T 1} (step SA5).

Next, the control device CONT determines whether or not the same processing as described above has been completed for each of a plurality of (N) temperature conditions of the liquid LQ determined in advance (step SA6). Steps SA1 to SA5 are executed under the following temperature conditions. That is, the control unit CONT carries the second test substrate Pt ₂ on the substrate stage PST (Step SA1). Then, the control device CONT determines the temperature of the liquid LQ supplied between the projection optical system PL and the second test substrate Pt _2, and the temperature of the liquid LQ measured by the temperature sensor 60 is the second temperature T ₂ (= T ₁ + ΔT) and so as to adjust, the second temperature _{T 2} the liquid LQ of the liquid immersion area AR2 which is adjusted to be formed between the projection optical system PL and the second test substrate Pt ₂ (step SA2). The above similarly, the control unit CONT, via the liquid LQ is set to a second temperature T ₂ and the projection optical system PL, while changing the imaging characteristics of the projection optical system PL, and the test mask Mt Test The pattern image is sequentially projected onto each of a plurality of different positions on the second test substrate Pt ₂ (step SA3). Next, the shape measuring apparatus 100 measures the shape (line width) of the test pattern formed in each shot region SH on the second test substrate Pt ₂ (step SA4). Then, the control unit CONT based on the measurement result of the shape measurement device 100, determine the optimum image formation characteristic condition (optimum correction amount condition of image formation characteristic control unit 3) at the second temperature condition T _2, the optimum sintering storing image characteristic condition in association with the second temperature condition _{T 2} (step SA5).

Hereinafter, the same processing is performed for each of the liquid LQ from the third temperature T ₃ (= T ₁ + 2 × ΔT) to the Nth temperature T _N (= T ₁ + (N−1) × ΔT). That is, the test pattern images are sequentially projected while changing the focal position and spherical aberration of the projection optical system PL under each of the first to Nth temperature conditions.

  In the present embodiment, the temperature condition of the liquid LQ is 23 ° C. as a reference value (center value), and the temperature of the liquid LQ is set every 10 mK with ΔT = 10 mK from −100 mK to +100 mK on the basis of the 23 ° C. It is changing.

  After obtaining and storing the optimum imaging characteristic condition for each of the first to Nth temperature conditions, the control unit CONT derives the relationship between the stored optimum imaging characteristic condition and the temperature condition of the liquid LQ. (Step SA7). Then, based on the derived result, the control device CONT determines the optimum imaging characteristics and the temperature condition of the liquid LQ when projecting the pattern image, that is, the optimum exposure condition (step SA8).

  Specifically, the control device CONT performs arithmetic processing such as fitting based on the relationship between the temperature of the liquid LQ and the imaging characteristics corresponding to the temperature. FIG. 6 plots the relationship between the temperature of the liquid LQ and the optimum spherical aberration obtained corresponding to the temperature, and the relationship is fitted based on the least square method or the like. In FIG. 6, the correction amount of the imaging characteristic control device 3 for realizing the optimum spherical aberration condition in which the spherical aberration is zero, and the temperature condition of the liquid LQ at that time are determined optimum exposure conditions. . Similarly, the control device CONT, based on the relationship between the temperature of the liquid LQ and the optimum focus position corresponding to the temperature, the correction amount of the imaging characteristic control device 3 for realizing the optimum focus position condition, The temperature condition of the liquid LQ is determined as the optimum exposure condition. Thus, the control device CONT measures the projection state of the sequentially projected test pattern image while changing the temperature condition of the liquid LQ, and based on the measured projection state of the test pattern image, the optimal exposure condition, that is, the liquid The image forming characteristic of the projection optical system including the temperature condition, spherical aberration, and focal position, and the optimum correction amount of the image forming characteristic control device 3 is determined.

  In FIG. 6, the relationship between the temperature of the liquid and the spherical aberration changes linearly. However, if the change is not linear, pay attention to the data points when performing linear fitting, and can be regarded as linear. It is preferable to perform fitting within a range.

Then, the control device CONT loads (loads) the mask M having a pattern for forming a device into the mask stage MST, and loads (loads) the substrate P for forming the device into the substrate stage PST. Then, the control device CONT illuminates the mask M with the exposure light EL using the illumination optical system IL under the determined exposure conditions, and the pattern image of the mask M is projected onto the projection optical system PL, the liquid LQ, and the like. The substrate P is exposed by projecting onto the substrate P through (step SA9). That is, the control device CONT controls the temperature adjustment device 14 of the liquid supply mechanism 10 so that the measurement result of the temperature sensor 60 becomes the temperature condition (reference value T ₀ ) of the liquid LQ determined in step SA8, and the temperature A liquid immersion area AR2 of the adjusted liquid LQ is formed. Further, the imaging characteristic of the projection optical system PL is adjusted based on the obtained correction amount of the imaging characteristic adjusting device 3 so that the optimum imaging characteristic can be obtained under the temperature condition of the liquid LQ. However, the substrate P is exposed.

Incidentally, the temperature of the liquid LQ of the liquid immersion area AR2 has been adjusted by the temperature controller 14 as measurement values of the temperature sensor 60 is the reference value T _0, for example, irradiation, or the like of the exposure light EL, immersion When the temperature of the liquid LQ in the area AR2 locally fluctuates, the control device CONT uses the imaging property control device 3 so as to obtain an optimal projection state, so that the imaging property ( (Spherical aberration and focal position) is controlled, or the substrate stage PST supporting the substrate P is moved so that the image plane formed through the projection optical system PL and the liquid LQ coincides with the surface of the substrate P. can do.

  As described above, when the pattern image is actually projected through the projection optical system PL and the liquid LQ while changing the temperature condition of the liquid LQ, and the pattern image is projected onto the substrate P based on the projection state. Exposure conditions, specifically the temperature conditions of the liquid LQ, the imaging characteristics including the spherical aberration and the focal position of the projection optical system, and the correction amount of the imaging characteristic control device 3 for obtaining the optimum imaging characteristics ( Therefore, the optimum exposure condition can be determined based on the actual projection state. The substrate P can be exposed satisfactorily by exposing the substrate P under the determined optimum exposure conditions.

  When designing the projection optical system PL of the immersion exposure apparatus, the temperature of the liquid LQ to be used is determined as a design value so that optimum imaging characteristics can be obtained based on the temperature condition of the liquid LQ on the design value. It is conceivable to design the projection optical system PL. Then, when the substrate P is actually exposed through the projection optical system PL and the liquid LQ, the image plane of the projection optical system PL is set so that the measured value of the temperature sensor 60 becomes the temperature condition of the liquid LQ on the design value. The temperature of the liquid LQ supplied to the side is adjusted by the temperature adjustment device 14. However, even if the temperature of the liquid LQ supplied to the image plane side of the projection optical system PL can be adjusted with high accuracy using the temperature control device 14, the absolute value of the temperature of the supplied liquid LQ is determined by the temperature sensor 60. It is difficult to know with an accuracy of 1 mK and 10 mK based on the measurement value from the viewpoint of the measurement capability of the temperature sensor. Therefore, if the temperature of the liquid LQ is adjusted based on the measurement value of the temperature sensor 60, an ideal projection state may not be obtained. Therefore, in the present embodiment, the pattern image is actually projected via the projection optical system PL and the liquid LQ, the projection state is measured, and the liquid LQ measured by the temperature sensor 60 when a desired projection state is obtained. And the correction amount of the imaging characteristic control device 3 for obtaining the imaging characteristic of the projection optical system PL is obtained, and the substrate P is satisfactorily exposed under optimum exposure conditions by maintaining this state. can do.

  In the above-described embodiment, while the position of the substrate P in the Z-axis direction is maintained, the substrate P is step-moved in the XY direction, and the projection optics is used under each of the first to Nth temperature conditions of the liquid LQ. The pattern image is sequentially projected while changing the imaging characteristics (focal position) of the system PL, and the exposure condition is determined based on the projection state of the plurality of pattern images projected under each of the first to Nth temperature conditions. However, instead of changing the imaging characteristics (focal position) of the projection optical system PL, the pattern images may be projected sequentially while changing the position of the substrate P in the Z-axis direction. That is, the pattern image is changed while changing the position of the surface of the substrate P on which the pattern image with respect to the image plane formed via the projection optical system PL and the liquid LQ is projected under each of the first to Nth temperature conditions of the liquid LQ. The exposure condition may be determined based on the projection state of a plurality of pattern images projected sequentially and projected under each of the first to Nth temperature conditions. In order to change the positional relationship between the image plane formed by the projection optical system PL and the surface of the substrate P on which the pattern image is projected, for example, the substrate stage PST may be moved in the Z-axis direction.

  In the above-described embodiment, after steps SA4 and SA5 are completed, steps SA1 to SA3 are executed under the conditions (temperature conditions) of the next liquid LQ. Steps SA1 to SA3 under the conditions (temperature conditions) and steps SA4 and SA5 under the previous liquid LQ conditions (temperature conditions) may be executed in parallel. Of course, after the N test substrates are exposed under the conditions of all the liquids LQ, the shape (line width) of the pattern formed on each test substrate may be measured.

Further, in the above embodiment, when the first temperature condition T ₁ using the first test substrate Pt _1, when the second temperature condition T ₂ using the second test substrate Pt _2, the temperature of the N Although when the condition T _N is used the N-th test substrate Pt _N, for example, when using a first test substrate Pt _1, while changing the temperature condition of the liquid LQ, the shot of the first test substrate Pt ₁ A pattern image may be projected on each of the regions SH.

  In the above-described embodiment, the pattern image is projected onto the test substrate and the shape of the developed pattern formed on the test substrate is measured. It is also possible to measure a latent image. Moreover, in the said embodiment, although the projection state of a pattern image is measured using the shape measurement apparatus 100, you may make it measure the projection state of a pattern image using the said aerial image measurement apparatus 500. FIG. As described above, the aerial image measurement apparatus 500 performs photoelectric detection of a pattern image via the light receiving unit 501 disposed on the image plane side of the projection optical system PL.

For example, when the optimal image formation position via the projection optical system PL and the liquid LQ is measured using the aerial image measurement device 500, the control device CONT is on the optical element 2 of the projection optical system PL and the substrate stage PST. The light receiving unit 501 is opposed to the optical element 2 of the projection optical system PL and the light receiving unit 501 on the substrate stage PST. The liquid immersion mechanism 1 is used to measure the temperature sensor 60 so that the measured value is the first temperature. to form a liquid LQ of the liquid immersion area AR2 which is adjusted so that T _1. Further, the control device CONT drives and controls the movable blind provided in the illumination optical system IL so that only the first test pattern PM1 of the test mask Mt shown in FIG. 4 is irradiated with the exposure light EL. Define the area. In this state, the control device CONT irradiates the test mask Mt (first test pattern PM1) with the exposure light EL and scans the substrate stage PST in the X-axis direction using the aerial image measurement device 500. The aerial image measurement of the test pattern PM1 is performed by the slit scan method. At this time, the control device CONT maintains the position of the substrate stage PST in the Z-axis direction, changes the focal position of the projection optical system PL using the imaging characteristic control device 3, and changes the space of the first test pattern PM1. Image measurement is repeated a plurality of times, and the light intensity signal (photoelectric conversion signal) for each time is stored. Alternatively, the aerial image measurement of the first test pattern PM1 is repeated a plurality of times while changing the position of the substrate stage PST in the Z-axis direction at a predetermined step pitch while driving of the imaging characteristic control device 3 is stopped. The light intensity signal (photoelectric conversion signal) may be stored. And the control apparatus CONT each carries out the Fourier transformation of the some light intensity signal (photoelectric conversion signal) obtained by the said repetition, and calculates | requires the contrast which is an amplitude ratio of each primary frequency component and zeroth-order frequency component. By performing such an aerial image measurement apparatus 500, a light intensity signal as shown in FIG. 7 can be obtained. In this case, by directly finding the position of the peak of the signal waveform of the light intensity signal, the Z position at that point may be set as the optimum focal position Z ₀ , or the light intensity signal is sliced at a predetermined slice level line SL, Z position of the two intersections of the midpoint between the light intensity signal and the slice level line SL may be the optimum focus position Z ₀ to. Then, the control device CONT sets the correction amount (or the Z position of the Z stage 52) of the imaging characteristic control device 3 corresponding to the light intensity signal that maximizes the contrast to the optimum focus under the _first temperature condition T1. The position condition is stored as the optimum correction amount of the imaging characteristic control device 3 that can obtain the position condition. Then, the same processing as described above is performed for each of the second to Nth temperature conditions of the liquid LQ, thereby determining the optimum exposure condition, that is, the optimum liquid temperature condition and the optimum focal position condition. Can do.

When measuring the spherical aberration via the projection optical system PL and the liquid LQ using the aerial image measurement device 500, the control device CONT includes the optical element 2 of the projection optical system PL and the light receiving unit on the substrate stage PST. The measured value of the temperature sensor 60 is the first temperature T ₁ using the liquid immersion mechanism 1 between the optical element 2 of the projection optical system PL and the light receiving unit 501 on the substrate stage PST. The liquid immersion area AR2 of the liquid LQ adjusted to become is formed. Further, the control device CONT drives and controls the movable blind provided in the illumination optical system IL so that only the first test pattern PM1 of the test mask Mt shown in FIG. 4 is irradiated with the exposure light EL. Define the area. In this state, the control device CONT irradiates the test mask Mt (first test pattern PM1) with the exposure light EL, and projects the image of the first test pattern PM1 using the aerial image measuring device 500 by the slit scanning method. Aerial image measurement is performed via the system PL and the liquid LQ. At this time, the control device CONT maintains the position of the substrate stage PST in the Z-axis direction, changes the focal position of the projection optical system PL using the imaging characteristic control device 3, and changes the first test pattern PM1. The aerial image measurement is repeated a plurality of times, and the light intensity signal (photoelectric conversion signal) of each time is stored. Next, the control unit CONT, the exposure light EL is a movable blind drives and controls so as to irradiate the second test pattern PM2, similarly to the above, the temperature condition T ₁ of the first liquid LQ, imaging characteristics While changing the focus position by the control device 3, the aerial image measurement of the image of the second test pattern PM2 through the projection optical system PL and the liquid LQ is performed by the slit scan method. These processes are repeatedly executed while changing the imaging characteristics (spherical aberration) of the projection optical system PL. And after the measurement about _1st temperature condition T1 of the liquid LQ is complete | finished, the process similar to the process mentioned above is performed also about each of the 2nd-Nth temperature conditions of the liquid LQ. Then, the control device CONT has the smallest difference between the optimum focal position of the first test pattern PM1 and the optimum focal position of the second test pattern PM2 (the smallest spherical aberration), and the contrast of the light intensity signal is the largest. The temperature of the liquid LQ and the correction amount of the imaging characteristic control device 3 are stored as optimum exposure conditions. Thus, the correction amount of the imaging characteristic control device 3 and the temperature condition of the liquid LQ that minimize the spherical aberration are obtained.

  Even when the aerial image measurement device 500 is used, the surface position of the aerial image measurement device 500 with respect to the image plane of the projection optical system PL is used instead of changing the focal position of the projection optical system PL using the imaging characteristic control device 3. May be changed.

  In the above-described embodiment, the pattern image is sequentially projected through the projection optical system PL while changing the temperature condition of the liquid LQ as the condition of the liquid LQ. However, the refractive index of the liquid LQ is added by adding an additive. The image of the test pattern may be projected while changing, for example, the liquid supply amount (flow velocity) per unit time supplied to the image plane side of the projection optical system PL via the liquid supply port 12, or the liquid When pattern images are sequentially projected via the projection optical system PL while changing conditions such as LQ supply position and collection position, and a device pattern is projected onto the substrate P based on the projection state of the pattern image at that time The exposure conditions may be determined. Since the projection state (including the vibration state) of the pattern image may change depending on the liquid supply amount per unit time, the supply position of the liquid LQ, and the recovery position, other than the temperature condition of the liquid LQ By sequentially projecting pattern images via the projection optical system PL while changing the conditions of the above, the optimum exposure conditions for projecting the device pattern on the substrate P are determined based on the projection state of the pattern image at that time can do.

  As described above, in the immersion exposure, since the pattern image is projected onto the substrate through the immersion area, the projection state of the pattern image depends on the state of the immersion area and the physical quantity of the liquid itself that forms the immersion area. May be affected. In particular, in a dynamic liquid immersion area maintained by liquid supply and recovery, the liquid flow and the depth and width of the liquid immersion area may affect the projection state of the pattern image. In this embodiment, the “liquid condition” means not only the physical quantity of the liquid itself such as the temperature, pressure, refractive index, density, component (composition and purity) of the liquid, but also the liquid for forming the immersion region. It is a concept that also includes the state of the immersion region (flow velocity, etc.) depending on the supply or recovery amount, the supply or recovery position, and the state of the immersion region such as the thickness and width (size) of the immersion region. Therefore, not only the temperature and temperature distribution of the liquid, but also measuring the projection state of the pattern image while changing one of the above liquid conditions or a combination thereof, from the correspondence between the liquid condition and the projection state, It is meaningful to determine optimum exposure conditions and store them in a memory.

  In the above-described embodiment, the projection state of the test pattern image provided on the test mask Mt is measured in order to determine the exposure condition, and the device pattern image provided on the mask M is determined based on the measurement result. The exposure condition for projecting the image is determined, but when the exposure condition is determined, the projection state of the device pattern image provided on the mask M is measured without using the test pattern of the test mask Mt, The exposure condition may be determined based on the measurement result. Further, a transmissive member that is fixed near the mounting position of the mask M on the mask stage MST and on which a test pattern is formed may be used.

  In the above-described embodiment, the test pattern image is projected while changing the focal position and spherical aberration of the projection optical system PL. However, the test pattern image is projected while changing either one of them. Alternatively, the test pattern image may be projected while changing other imaging characteristics such as distortion. Further, the test pattern image may be projected while changing the polarization state and the wavefront aberration state. In this case, instead of the aerial image measuring apparatus 500 or in addition to the aerial image measuring apparatus 500, a measuring apparatus for polarization state and wavefront aberration is mounted, and these are used to measure the projection state of the pattern image. It may be.

  In addition, the measurement of the pattern image projection state as described above is performed while changing the conditions of the liquid LQ for each illumination condition (quadrupole illumination, dipole illumination, annular illumination, linearly polarized illumination, circularly polarized illumination, etc.). Alternatively, it may be executed while changing the conditions of the liquid LQ for each characteristic of the mask M (type (binary type, phase shift, etc.), pattern density, pattern distribution, etc.).

  In the above-described embodiment, information on the measurement result of the shape measuring apparatus 100 is transmitted to the control apparatus CONT of the exposure apparatus EX. However, the conditions (liquid conditions and projection optics) when the test substrate is exposed are used. Information on the imaging characteristics (focus position, spherical aberration, etc.) of the system PL and information on the measurement result of the shape measuring apparatus 100 are collected in an external host computer or the like to determine the optimum exposure conditions. Also good.

  As described above, the liquid LQ in the present embodiment is composed of pure water. Pure water has an advantage that it can be easily obtained in large quantities at a semiconductor manufacturing factory or the like, and has no adverse effect on the photoresist, optical element (lens), etc. on the substrate P. In addition, pure water has no adverse effects on the environment, and since the impurity content is extremely low, it can be expected to clean the surface of the substrate P and the surface of the optical element provided on the front end surface of the projection optical system PL. . When the purity of pure water supplied from a factory or the like is low, the exposure apparatus may have an ultrapure water production device.

  From this point of view, it is meaningful to measure the imaging state of the projection optical system with pure water of various purity, and to determine and store the exposure conditions according to the purity.

  The refractive index n of pure water (water) with respect to the exposure light EL having a wavelength of about 193 nm is said to be approximately 1.44. When ArF excimer laser light (wavelength 193 nm) is used as the light source of the exposure light EL, On the substrate P, the wavelength is shortened to 1 / n, that is, about 134 nm, and a high resolution can be obtained. Furthermore, since the depth of focus is enlarged by about n times, that is, about 1.44 times compared with that in the air, the projection optical system PL can be used when it is sufficient to ensure the same depth of focus as that in the air. The numerical aperture can be further increased, and the resolution is improved in this respect as well.

  As described above, when the liquid immersion method is used, the numerical aperture NA of the projection optical system may be 0.9 to 1.3. When the numerical aperture NA of the projection optical system becomes large in this way, the imaging performance may deteriorate due to the polarization effect with random polarized light conventionally used as exposure light. desirable. In that case, linearly polarized illumination is performed in accordance with the longitudinal direction of the line pattern of the mask (reticle) line-and-space pattern. From the mask (reticle) pattern, the S-polarized light component (TE-polarized light component), that is, the line pattern It is preferable that a large amount of diffracted light having a polarization direction component is emitted along the longitudinal direction. When the space between the projection optical system PL and the resist applied on the surface of the substrate P is filled with a liquid, the space between the projection optical system PL and the resist applied on the surface of the substrate P is filled with air (gas). Compared with the case where the transmittance of the diffracted light of the S-polarized component (TE-polarized component) contributing to the improvement of the contrast is high on the resist surface, the numerical aperture NA of the projection optical system exceeds 1.0. Even in this case, high imaging performance can be obtained. Further, it is more effective to appropriately combine a phase shift mask and an oblique incidence illumination method (particularly a dipole illumination method) or the like according to the longitudinal direction of the line pattern as disclosed in JP-A-6-188169. In particular, the combination of the linearly polarized illumination method and the dipole illumination method is used when the periodic direction of the line-and-space pattern is limited to a predetermined direction or when the hole pattern is densely aligned along the predetermined direction. It is effective when For example, when illuminating a halftone phase shift mask (pattern with a half pitch of about 45 nm) with a transmittance of 6% using both the linearly polarized illumination method and the dipole illumination method, a dipole is formed on the pupil plane of the illumination system. If the illumination σ defined by the circumscribed circle of the two luminous fluxes is 0.95, the radius of each luminous flux on the pupil plane is 0.125σ, and the numerical aperture of the projection optical system PL is NA = 1.2, the randomly polarized light is The depth of focus (DOF) can be increased by about 150 nm rather than using it.

  Further, for example, an ArF excimer laser is used as the exposure light, and a fine line and space pattern (for example, a line and space of about 25 to 50 nm) is formed on the substrate by using the projection optical system PL with a reduction magnification of about 1/4. When exposing on P, depending on the structure of the mask M (for example, the fineness of the pattern and the thickness of chrome), the mask M acts as a polarizing plate due to the Wave guide effect, and the P-polarized component (TM polarized light) that lowers the contrast. More diffracted light of the S-polarized component (TE polarized component) is emitted from the mask M than the diffracted light of the component. In this case, it is desirable to use the above-mentioned linearly polarized illumination, but even if the mask M is illuminated with random polarized light, it is high even when the numerical aperture NA of the projection optical system PL is as large as 0.9 to 1.3. Resolution performance can be obtained.

When an extremely fine line-and-space pattern on the mask M is exposed on the substrate P, the P-polarized component (TM-polarized component) is larger than the S-polarized component (TE-polarized component) due to the Wire Grid effect. For example, an ArF excimer laser is used as exposure light, and a line and space pattern larger than 25 nm is exposed on the substrate P using the projection optical system PL with a reduction magnification of about 1/4. In this case, since the diffracted light of the S polarization component (TE polarization component) is emitted from the mask M more than the diffracted light of the P polarization component (TM polarization component), the numerical aperture NA of the projection optical system PL is 0.9. High resolution performance can be obtained even when the value is as large as -1.3.

  Furthermore, not only linearly polarized illumination (S-polarized illumination) matched to the longitudinal direction of the line pattern of the mask (reticle) but also a circle centered on the optical axis as disclosed in JP-A-6-53120. A combination of the polarization illumination method that linearly polarizes in the tangential (circumferential) direction and the oblique incidence illumination method is also effective. In particular, when not only a line pattern extending in a predetermined direction but also a plurality of line patterns extending in different directions (a mixture of line and space patterns having different periodic directions) is included in the mask (reticle) pattern, Similarly, as disclosed in Japanese Patent Laid-Open No. 6-53120, an aperture of the projection optical system can be obtained by using both the polarization illumination method that linearly polarizes in the tangential direction of the circle centered on the optical axis and the annular illumination method. Even when the number NA is large, high imaging performance can be obtained. For example, a polarized illumination method and an annular illumination method (annular ratio) in which a half-tone phase shift mask having a transmittance of 6% (a pattern having a half pitch of about 63 nm) is linearly polarized in a tangential direction of a circle around the optical axis. 3/4), when the illumination σ is 0.95 and the numerical aperture of the projection optical system PL is NA = 1.00, the depth of focus (DOF) is more than that of using randomly polarized light. If the projection optical system has a numerical aperture NA = 1.2 with a pattern with a half pitch of about 55 nm, the depth of focus can be increased by about 100 nm.

  In the present embodiment, the optical element 2 is attached to the tip of the projection optical system PL, and the optical characteristics of the projection optical system PL, for example, aberration (spherical aberration, coma aberration, etc.) can be adjusted by this lens. The optical element attached to the tip of the projection optical system PL may be an optical plate used for adjusting the optical characteristics of the projection optical system PL. Alternatively, it may be a plane parallel plate that can transmit the exposure light EL.

  When the pressure between the optical element at the tip of the projection optical system PL generated by the flow of the liquid LQ and the substrate P is large, the optical element is not exchangeable but the optical element is moved by the pressure. It may be fixed firmly so that there is no.

  In the present embodiment, the space between the projection optical system PL and the surface of the substrate P is filled with the liquid LQ. However, for example, the liquid with the cover glass made of a plane-parallel plate attached to the surface of the substrate P is used. The structure which satisfy | fills LQ may be sufficient.

The liquid LQ of the present embodiment is water, but may be a liquid other than water. For example, when the light source of the exposure light EL is an F ₂ laser, the F ₂ laser light does not pass through water. The liquid LQ may be, for example, a fluorinated fluid such as perfluorinated polyether (PFPE) or fluorinated oil that can transmit F ₂ laser light. In this case, the lyophilic treatment is performed by forming a thin film with a substance having a molecular structure having a small polarity including fluorine, for example, at a portion in contact with the liquid LQ. In addition, as the liquid LQ, the liquid LQ is transmissive to the exposure light EL, has a refractive index as high as possible, and is stable with respect to the photoresist applied to the projection optical system PL and the surface of the substrate P (for example, Cedar). Oil) can also be used. Also in this case, the surface treatment is performed according to the polarity of the liquid LQ to be used. Moreover, it is also possible to use various liquids having a desired refractive index instead of the pure water of the liquid LQ. As described above, since various liquids can be used as the liquid LQ depending on the light source and application, the projection state of the pattern image is measured for each liquid type as the “liquid condition” according to the present invention, and the optimum exposure condition is set. Each can be asked for. Then, the imaging characteristics and the like can be controlled so that the control device CONT has optimum exposure conditions according to the liquid to be used.

  The substrate P in each of the above embodiments is not only a semiconductor wafer for manufacturing a semiconductor device, but also a glass substrate for a display device, a ceramic wafer for a thin film magnetic head, or an original mask or reticle used in an exposure apparatus. (Synthetic quartz, silicon wafer) or the like is applied. In the above-described embodiment, a light transmissive mask (reticle) in which a predetermined light shielding pattern (or phase pattern / dimming pattern) is formed on a light transmissive substrate is used. Instead of this reticle, for example, the United States As disclosed in Japanese Patent No. 6,778,257, an electronic mask that forms a transmission pattern, a reflection pattern, or a light emission pattern based on electronic data of a pattern to be exposed may be used.

  As the exposure apparatus EX, in addition to the step-and-scan type scanning exposure apparatus (scanning stepper) that scans and exposes the pattern of the mask M by moving the mask M and the substrate P synchronously, the mask M and the substrate P Can be applied to a step-and-repeat type projection exposure apparatus (stepper) in which the pattern of the mask M is collectively exposed while the substrate P is stationary and the substrate P is sequentially moved stepwise. Further, as disclosed in International Publication No. 2001/035168, an exposure apparatus (lithography system) that forms line and space patterns on a substrate P by forming interference fringes on the substrate P. The present invention can also be applied, and a projection optical system for projecting a pattern image onto the substrate P can be omitted.

  Further, as the exposure apparatus EX, a reduced image of the first pattern is projected with the first pattern and the substrate P being substantially stationary (for example, a refraction type projection optical system that does not include a reflecting element at 1/8 reduction magnification). The present invention can also be applied to an exposure apparatus that performs batch exposure on the substrate P using the above. In this case, after that, with the second pattern and the substrate P substantially stationary, a reduced image of the second pattern is collectively exposed onto the substrate P by partially overlapping the first pattern using the projection optical system. It can also be applied to a stitch type batch exposure apparatus. Further, the stitch type exposure apparatus can be applied to a step-and-stitch type exposure apparatus in which at least two patterns are partially transferred on the substrate P, and the substrate P is sequentially moved.

  The present invention can also be applied to a twin stage type exposure apparatus disclosed in Japanese Patent Application Laid-Open No. 10-163099, Japanese Patent Application Laid-Open No. 10-214783, and Japanese Translation of PCT International Publication No. 2000-505958.

  In the above-described embodiment, an exposure apparatus that locally fills the liquid between the projection optical system PL and the substrate P is employed. However, the present invention is disclosed in, for example, Japanese Patent Application Laid-Open Nos. 6-124873 and The present invention is also applicable to an immersion exposure apparatus that moves a stage holding a substrate to be exposed as disclosed in JP-A-10-303114 in a liquid tank.

  The type of the exposure apparatus EX is not limited to an exposure apparatus for manufacturing a semiconductor element that exposes a semiconductor element pattern on the substrate P, but an exposure apparatus for manufacturing a liquid crystal display element or a display, a thin film magnetic head, an image sensor (CCD). ) Or an exposure apparatus for manufacturing reticles or masks.

  When using a linear motor (see USP5,623,853 or USP5,528,118) for the substrate stage PST and mask stage MST, use either an air levitation type using air bearings or a magnetic levitation type using Lorentz force or reactance force. Also good. Each stage PST, MST may be a type that moves along a guide, or may be a guideless type that does not have a guide.

  As a driving mechanism for each stage PST, MST, a planar motor that drives each stage PST, MST by electromagnetic force with a magnet unit having a two-dimensionally arranged magnet and an armature unit having a two-dimensionally arranged coil facing each other is provided. It may be used. In this case, either one of the magnet unit and the armature unit may be connected to the stages PST and MST, and the other of the magnet unit and the armature unit may be provided on the moving surface side of the stages PST and MST.

  As described in JP-A-8-166475 (USP 5,528,118), the reaction force generated by the movement of the substrate stage PST is not transmitted to the projection optical system PL, but mechanically using a frame member. You may escape to the floor (ground).

As described in JP-A-8-330224 (US S / N 08 / 416,558), a frame member is used so that the reaction force generated by the movement of the mask stage MST is not transmitted to the projection optical system PL. May be mechanically released to the floor (ground).

  As described above, the exposure apparatus EX according to the present embodiment maintains various mechanical subsystems including the respective constituent elements recited in the claims of the present application so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. Manufactured by assembling. To ensure these various accuracies, before and after this assembly, various optical systems are adjusted to achieve optical accuracy, various mechanical systems are adjusted to achieve mechanical accuracy, and various electrical systems are Adjustments are made to achieve electrical accuracy. The assembly process from the various subsystems to the exposure apparatus includes mechanical connection, electrical circuit wiring connection, pneumatic circuit piping connection, and the like between the various subsystems. Needless to say, there is an assembly process for each subsystem before the assembly process from the various subsystems to the exposure apparatus. When the assembly process of the various subsystems to the exposure apparatus is completed, comprehensive adjustment is performed to ensure various accuracies as the entire exposure apparatus. The exposure apparatus is preferably manufactured in a clean room where the temperature, cleanliness, etc. are controlled.

  As shown in FIG. 8, a microdevice such as a semiconductor device includes a step 201 for designing a function / performance of the microdevice, a step 202 for manufacturing a mask (reticle) based on the design step, and a substrate which is a base material of the device. Step 203 for manufacturing (wafer), exposure processing (wafer processing) step 204 for exposing the mask pattern onto the substrate by the exposure apparatus EX of the above-described embodiment, device assembly step (including dicing process, bonding process, and packaging process) 205, manufactured through inspection step 206 and the like. The wafer processing step 204 includes steps SA1 to SA9 described in the flowchart of FIG.

It is a schematic block diagram which shows the exposure apparatus which concerns on this embodiment. It is a top view of a substrate stage. It is a flowchart for demonstrating the exposure procedure which concerns on this embodiment. It is a figure which shows an example of a test mask. It is a figure which shows an example of a test board | substrate. It is a schematic diagram which shows the relationship between a liquid temperature and spherical aberration. It is a figure for demonstrating the focus position measurement using an aerial image measuring device. It is a flowchart figure which shows an example of the manufacturing process of a semiconductor device.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Immersion mechanism, 3 ... Imaging characteristic control apparatus, 14 ... Temperature control apparatus, 100 ... Shape measurement apparatus, 500 ... Aerial image measurement apparatus, 501 ... Light-receiving part, CONT ... Control apparatus, LQ ... Liquid, M ... Mask , Mt ... test mask, P ... substrate, PL ... projection optical system, _Pt 1 ~PT N _... test substrate, SH ... shot area

Claims (59)

A method for determining an exposure condition for exposing the substrate by projecting a pattern image onto the substrate via a projection optical system and a liquid,
Prior to exposure of the substrate, a pattern image is sequentially projected through the projection optical system under a plurality of conditions of the liquid,
An exposure condition determining method, comprising: determining an imaging characteristic condition of the projection optical system corresponding to a condition of the liquid when projecting a pattern image on the substrate based on a projection state of the pattern image .   A method for determining an exposure condition for exposing the substrate by projecting a pattern image onto the substrate via a projection optical system and a liquid,
  Prior to exposure of the substrate, a pattern image is sequentially projected through the projection optical system under a plurality of conditions of the liquid,
  An exposure condition determining method, comprising: determining a positional relationship between an image plane formed via the projection optical system and the liquid and the substrate based on a projection state of the pattern image. Method of determining of claim 1, wherein the imaging characteristic conditions of the projection optical system including the spherical aberration or the focal position. Condition of the liquid, the method of determining the any one of claims 1 to 3 comprising a temperature condition of the liquid.   The determination method according to claim 1, wherein the liquid condition includes at least one of a supply amount and a recovery amount of the liquid.   The liquid condition includes at least one of a supply position of the liquid, a recovery position of the liquid, a density of the liquid, a composition of the liquid, and a type of the liquid. Decision method. It further includes measuring the projection state of a plurality of pattern images sequentially projected while changing the liquid conditions,
Claim 1, 3 to a method of determining according to any one claim of 6 to determine the measured pattern image imaging characteristic conditions of the projection optical system based on the projection state of the. Projecting pattern images sequentially on different positions on the test substrate while changing the liquid conditions,
The determination method according to claim 7 , wherein the measurement of the projection state includes measurement of a projection state of a plurality of pattern images formed on the test substrate. The determination method according to claim 7 , wherein the measurement of the projection state includes measurement of a shape of a pattern image formed on the test substrate. Measurement of the projection state, the pattern image is successively projected while changing the condition of the liquid, according to claim 7, which comprises detecting photoelectrically through the light receiving unit arranged on the image plane side of the projection optical system Decision method. Sequentially projecting pattern images while changing the imaging characteristics of the projection optical system under the first condition of the liquid;
In the second condition of the liquid, pattern images are sequentially projected while changing the imaging characteristics of the projection optical system,
Claim 1, wherein a plurality of pattern images projected under the first condition, based on a plurality of pattern image projected by the second condition, determining the imaging characteristics condition of the projection optical system, 3-10 The determination method according to any one of the above. The determination method according to claim 11 , wherein the pattern image is sequentially projected while changing the spherical aberration of the projection optical system under each of the first condition and the second condition of the liquid. In each of the first condition and the second condition of the liquid, the projection image surface and the pattern image formed by the optical system successively projects a pattern image while changing the positional relationship between the projection plane to be projected claims 11 or 12. The determination method according to 12 . While changing the positional relationship between the image plane formed by the projection optical system and the projection plane on which the pattern image is projected under the first condition of the liquid, the pattern images are sequentially projected on the projection plane,
While changing the positional relationship between the image plane formed by the projection optical system and the projection plane on which the pattern image is projected under the second condition of the liquid, the pattern image is sequentially projected on the projection plane,
Wherein a plurality of pattern images projected under the first condition, based on a plurality of pattern image projected by the second condition, according to claim 1 for determining the imaging characteristics condition of the projection optical system, 3-10 The determination method according to any one of the above. A method for determining exposure conditions for exposing a substrate by irradiating the substrate with exposure light through a liquid,
Prior to exposure of the substrate, the test substrate is exposed by irradiating the test substrate with exposure light through the liquid under a plurality of liquid conditions, and the substrate is exposed according to the exposure state of the test substrate. An exposure condition determination method including determining an exposure condition.   The determination method according to claim 15, wherein the exposure condition includes a positional relationship between an image plane formed through the projection optical system and the liquid and the substrate.   The determination method according to claim 15 or 16, wherein the exposure condition includes an imaging characteristic of the projection optical system when a pattern image is projected onto the substrate.   The determination method according to claim 15, wherein the liquid condition includes a temperature condition of the liquid. The determination method according to claim 15, wherein the liquid condition includes at least one of a supply amount and a recovery amount of the liquid.   The liquid condition includes at least one of a supply position of the liquid, a recovery position of the liquid, a density of the liquid, a composition of the liquid, and a type of the liquid. Decision method.   A method for determining conditions for exposing a substrate via a projection optical system and a liquid, comprising:
  Measure the formation state of the pattern through the liquid,
  An exposure condition determining method for determining an imaging characteristic condition of the projection optical system corresponding to the liquid condition based on the measured formation state of the pattern.   The determination method according to claim 21, wherein the condition of the liquid includes a temperature of the liquid.   The determination method according to claim 21, wherein the liquid condition includes at least one of a supply amount of the liquid and a recovery amount of the liquid.   The liquid condition includes at least one of a refractive index of the liquid, a supply position of the liquid, a recovery position of the liquid, a density of the liquid, a composition of the liquid, and a type of the liquid. Decision method.   The determination method according to any one of claims 21 to 24, wherein the formation state of the pattern includes a pattern shape or a line width of the pattern.   The determination method according to any one of claims 21 to 25, wherein the formation state of the pattern is measured by an aerial image of the pattern.   27. The determination method according to any one of claims 21 to 26, wherein the pattern formation state is measured based on a pattern formed on a test substrate. An exposure method for exposing the substrate under the exposure conditions determined by the method according to any one of claims 1 to 27 . A device manufacturing method using the exposure method according to claim 28 . In an exposure apparatus that exposes the substrate by projecting a pattern image onto the substrate via a projection optical system and a liquid,
An immersion mechanism for forming an immersion area on the image plane side of the projection optical system;
Prior to exposure of the substrate, a measurement device that measures the projection state of the pattern image sequentially projected under a plurality of conditions of the liquid forming the liquid immersion region;
A control device that determines an imaging characteristic condition of the projection optical system corresponding to a condition of the liquid when exposing the substrate based on a measurement result of the measurement device;
An exposure apparatus comprising:   In an exposure apparatus that exposes the substrate by projecting a pattern image onto the substrate via a projection optical system and a liquid,
  An immersion mechanism for forming an immersion area on the image plane side of the projection optical system;
  Prior to exposure of the substrate, a measurement device that measures the projection state of the pattern image sequentially projected under a plurality of conditions of the liquid forming the liquid immersion region;
  A control device for determining a positional relationship between the image plane formed through the projection optical system and the liquid and the substrate based on a pattern image formation state measured by the measurement device;
An exposure apparatus comprising: The exposure apparatus according to claim 30, wherein the imaging characteristic condition of the projection optical system includes spherical aberration or a focal position . The liquid immersion mechanism has a temperature control device that adjusts the temperature of the liquid,
33. The exposure apparatus according to any one of claims 30 to 32 , wherein the liquid condition includes a temperature condition of the liquid. 34. The exposure apparatus according to any one of claims 30 to 33 , wherein the measuring device photoelectrically detects a pattern image via a light receiving unit disposed on the image plane side of the projection optical system. The exposure apparatus according to any one of claims 30 to 34 , further comprising a memory that stores a relationship between a projection state of the pattern image measured by the measurement apparatus and the condition of the liquid. 36. The exposure apparatus according to any one of claims 30 to 35 , wherein the condition of the liquid includes at least one of a physical quantity of the liquid and a state of the immersion area. An exposure apparatus that exposes a substrate through a liquid,
A projection optical system for projecting an image of a pattern onto the substrate through the liquid;
An exposure apparatus comprising: a control device that determines an exposure condition based on a projection state of a pattern image by a projection optical system under a plurality of conditions of the liquid and executes exposure under the determined exposure condition. 38. The exposure apparatus according to claim 37 , wherein the exposure condition includes at least one of a physical quantity of the liquid and a state of an immersion area. The exposure apparatus according to claim 37 or 38 , wherein the exposure condition includes an imaging characteristic of the projection optical system. The exposure apparatus according to any one of claims 37 to 39 , further comprising an image formation characteristic adjusting device that adjusts an image formation characteristic of the projection optical system. The control device determines a condition of the liquid based on a projection state of the pattern image;
  41. The exposure apparatus according to claim 40, wherein the imaging characteristic adjusting device adjusts the imaging characteristic of the projection optical system according to the determined condition of the liquid. 42. The exposure apparatus according to any one of claims 37 to 41 , further comprising a measurement device that measures a projection state of a pattern image by a projection optical system under a plurality of conditions with different liquids. 43. The exposure apparatus according to any one of claims 37 to 42 , further comprising a liquid immersion mechanism that forms a liquid immersion area on the image plane side of the projection optical system. 44. The exposure apparatus according to claim 43 , wherein the liquid immersion mechanism includes a temperature adjustment device that adjusts a temperature of a liquid supplied to the liquid immersion region. 45. The exposure apparatus according to any one of claims 37 to 44 , further comprising a temperature sensor that measures the temperature of the liquid. 46. The exposure apparatus according to any one of claims 37 to 45 , further comprising a memory for storing the liquid condition and a projection state of a pattern image corresponding to the liquid condition.   An exposure apparatus that exposes a substrate with exposure light via a projection optical system,
  An immersion mechanism for forming an immersion region in the optical path of the exposure light;
  A control device for determining an imaging characteristic condition of the projection optical system corresponding to the condition of the liquid, based on a formation state of a pattern via the liquid forming the liquid immersion area;
An exposure apparatus comprising: Having a measuring device for measuring the formation state of the pattern via the liquid;
  48. The exposure apparatus according to claim 47, wherein the control apparatus determines an imaging characteristic condition of the projection optical system based on a measurement result of the measurement apparatus.   49. The exposure apparatus according to claim 48, wherein the measurement apparatus measures a latent image state on the substrate coated with a resist.   49. The exposure apparatus according to claim 48, wherein the measurement apparatus measures an aerial image of the pattern. The liquid condition includes the temperature of the liquid, the refractive index of the liquid, the supply amount of the liquid, the recovery amount of the liquid, the supply position of the liquid, the recovery position of the liquid, the density of the liquid, and the composition of the liquid 51. The exposure apparatus according to claim 47, comprising at least one of the liquid types. An exposure apparatus that exposes a substrate with exposure light via a projection optical system,
  An immersion mechanism for forming an immersion region in the optical path of the exposure light;
  Based on the formation state of the pattern through the liquid forming the liquid immersion area, the liquid condition is adjusted to a predetermined state, and the imaging characteristics of the projection optical system are adjusted according to the adjusted liquid condition. A control device to adjust;
An exposure apparatus comprising: Comprising a measuring device for measuring the formation state of the pattern;
  53. The exposure apparatus according to claim 52, wherein the control apparatus adjusts the liquid condition and the imaging characteristics of the projection optical system based on a measurement result of the measurement apparatus.   54. The exposure apparatus according to claim 53, wherein the measurement apparatus measures a latent image state on the substrate coated with a resist. The exposure apparatus according to claim 53, wherein the measurement apparatus measures an aerial image of the pattern. The liquid conditions are: temperature of the liquid, refractive index of the liquid, supply amount or / and recovery amount of the liquid, supply position or / and recovery position of the liquid, density of the liquid, composition of the liquid, 56. The exposure apparatus according to any one of claims 52 to 55, comprising at least one kind of liquid. 57. A device manufacturing method using the exposure apparatus according to any one of claims 30 to 56 .   An exposure method for exposing a substrate with exposure light via a projection optical system,
  Setting the condition of the liquid to a predetermined state;
  Forming an image of a pattern through the projection optical system and the liquid under the set conditions of the liquid;
  Based on the formed images of the plurality of patterns, adjusting the imaging characteristic condition of the projection optical system corresponding to the condition of the liquid,
  An exposure method in which the substrate is exposed after adjusting the imaging characteristic condition of the projection optical system.   Measure the image of the pattern formed,
  59. The exposure method according to claim 58, wherein an imaging characteristic condition of the projection optical system is adjusted based on the measured pattern image.

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