JP4634836B2 - High frequency package, transceiver module and radio apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To obtain a high-frequency package having high performance for high-frequency shielding, a transceiver module, and a radio device at a low cost, by suppressing the leakage of high-frequency components to the outside in the high-frequency package. <P>SOLUTION: A multilayer dielectric substrate 23 is provided with signal vias 65, connected with a terminal for bias/control signals of a high-frequency semiconductor 43 and arranged inside electromagnetic shielding members 24 and 25; signal vias 65, arranged outside the electromagnetic shielding members 24 and 25 and connected with an external terminal 51 for the bias/control signals; an inner layer signal line 60 connecting the signal vias; an inner layer earth conductor 70, arranged on the circumference of the signal vias 65 and the inner layer signal line 60; and a plurality of ground vias 75, arranged on the circumference of the signal vias 65 and the inner layer signal line 60 on the inner layer ground conductor 70. In the inner layer signal line 60, there is provided a tip opened line 83, having a length of roughly a quarter of the effective wavelength of the high-frequency signal used for the high-frequency semiconductor 43. <P>COPYRIGHT: (C)2006,JPO&amp;NCIPI

Description

  The present invention relates to a high-frequency package including a high-frequency semiconductor that operates in a high-frequency band such as a microwave band or a millimeter-wave band, a transmission / reception module and a wireless device using the high-frequency package, and more particularly, a high-frequency signal generated from the high-frequency semiconductor. The present invention relates to a high-frequency package capable of suppressing leakage to the outside, a transmission / reception module and a wireless device using the high-frequency package.

  In conventional wireless devices, for example, in-vehicle millimeter-wave radar uses millimeter-wave electromagnetic waves and detects distance to the vehicle ahead and relative speed, thereby ensuring safety such as cruise control and mitigating damage to drivers when collisions are inevitable. It is applied to sex measures. In such an in-vehicle millimeter wave radar, in order to obtain a high frequency transmission signal in the millimeter wave band, there are many methods of multiplying from 1 / N frequency (N is an integer of 2 or more). Since the components are present in the module, it is very difficult to satisfy the desired EMI characteristics.

  In an in-vehicle millimeter-wave radar, a transmission / reception module usually includes a high-frequency package on which a high-frequency semiconductor for a radar device is mounted, a control / interface board that supplies a bias signal and a control signal to the high-frequency package, a waveguide, and the like. Although configured, in order to satisfy the above-mentioned EMI characteristics, conventionally, the entire transmission / reception module is often configured to be covered with a metal cover.

  However, when the entire transmission / reception module is configured to be covered with a metal cover, an expensive housing or the like is required. Therefore, countermeasures are desired in the high-frequency package for cost reduction.

  In Patent Document 1, a high-frequency signal integrated circuit component and a dielectric substrate are mounted on a metal base member, a micro slip line is formed on the dielectric substrate, and these are formed by a metal frame member and a lid member. The high frequency signal integrated circuit component mounted on the base member is covered with a bias via a bias terminal.

JP 2000-31812 A

  In the above prior art, since the high frequency package is surrounded by the metal base, the metal frame member, and the metal lid member, the leakage of the high frequency component to the outside is suppressed to some extent, but the high frequency component leaking through the bias terminal is limited. No measures have been taken. For this reason, there is a problem that a high frequency component which is an unnecessary wave electromagnetically coupled to the dielectric substrate and the bias terminal in the high frequency package is directly radiated to the outside through the bias terminal.

  The present invention has been made in view of the above, and a high-frequency package, a transmission / reception module, and a radio apparatus that are low-cost and high in high-frequency shielding performance by suppressing leakage of high-frequency components to the outside in the high-frequency package. The purpose is to obtain.

  In order to solve the above-described problems and achieve the object, the present invention provides a high-frequency semiconductor, a multilayer dielectric substrate on which the high-frequency semiconductor is mounted on a surface ground conductor, a part of the surface layer of the multilayer dielectric substrate, and A high frequency package comprising an electromagnetic shield member covering the high frequency semiconductor, wherein the multilayer dielectric substrate is connected to a bias / control signal terminal of the high frequency semiconductor, and is disposed inside the electromagnetic shield member. A signal via, a second signal via disposed outside the electromagnetic shield member and connected to an external terminal for a bias / control signal, and an inner layer signal connecting the first signal via and the second signal via A line, an inner layer ground conductor disposed around the first signal via, the second signal via, and the inner layer signal line, and the first signal via and the second signal on the inner layer ground conductor. And a plurality of ground vias disposed around the inner layer signal line, and the inner layer signal line has a length of about 1/4 of an effective wavelength of a high frequency signal used in the high frequency semiconductor. Is provided.

  In the present invention, the inner layer signal line for the bias / control signal is provided with an open-ended line having a length that is approximately ¼ of the effective wavelength of the high-frequency signal used in the high-frequency semiconductor. Even if a high-frequency component enters the multilayer dielectric substrate from the dielectric layer on the surface layer of the substrate and is electromagnetically coupled to the signal via for the bias / control signal or the inner-layer signal line, this high-frequency component is It is possible to suppress reflection and passage to the external terminal.

  In the next invention, a multi-layer dielectric substrate having a high-frequency semiconductor, an inner-layer ground conductor placed on the surface-layer ground conductor and connected to the surface-layer ground conductor, and a part of the surface layer of the multi-layer dielectric substrate And a high-frequency package comprising an electromagnetic shield member covering the high-frequency semiconductor, wherein the multilayer dielectric substrate is connected to a bias / control signal terminal of the high-frequency semiconductor, and is disposed inside the electromagnetic shield member. Signal vias, a second signal via disposed outside the electromagnetic shield member and connected to an external terminal for a bias / control signal, and an inner layer connecting the first signal via and the second signal via A first ground consisting of a signal line and a plurality of ground vias disposed closer to the high-frequency semiconductor than the first signal via and connected to the inner layer ground conductor And a second ground via row that is arranged between the first signal via and the second signal via and includes a plurality of ground vias connected to the inner-layer ground conductor, The interval between the first ground via row and the second ground via row is less than half of the effective wavelength of the high frequency signal used in the high frequency semiconductor, and each of the first and second ground via rows The interval between adjacent ground vias is set to be less than ½ of the effective wavelength of the high-frequency signal used in the high-frequency semiconductor.

  According to the present invention, the distance between the first ground via row and the second ground via row is set to be less than half of the effective wavelength of the high frequency signal used in the high frequency semiconductor. Suppresses the entry of high-frequency components in the direction along the ground via row. Further, by setting the adjacent interval between the ground vias in the first and second ground via rows to be less than ½ of the effective wavelength of the high-frequency signal used in the high-frequency semiconductor, the ground via row in the multilayer dielectric substrate Suppresses the entry of high-frequency components in the direction perpendicular to.

  According to the present invention, an open-ended line having a length substantially ¼ of the effective wavelength of a high-frequency signal used in a high-frequency semiconductor is provided on the inner-layer signal line for bias / control signals, and a multilayer dielectric Since the high frequency component that has entered the substrate is reflected at the position of the open-ended line and can be prevented from passing to the external terminal, leakage of the high frequency component to the outside of the high frequency package can be reliably suppressed. Thus, since the leakage of the high frequency component to the outside of the high frequency package can be suppressed inside the high frequency package, the manufacturing cost can be reduced.

  According to the next invention, the distance between the first ground via row and the second ground via row is less than half of the effective wavelength of the high-frequency signal used in the high-frequency semiconductor. Of the high-frequency component in the direction along the ground via row of the first and second ground via rows, and the adjacent interval between the ground vias in the first and second ground via rows is 1 / of the effective wavelength of the high-frequency signal used in the high-frequency semiconductor. By setting it to less than 2, the entry of high frequency components in the direction perpendicular to the ground via row in the multilayer dielectric substrate is suppressed. Thus, according to the present invention, it is possible to suppress the coupling of high-frequency signals to signal vias or inner-layer signal lines in the multilayer dielectric substrate, and unnecessary waves are transmitted via these signal vias, inner-layer signal lines, and external terminals. Can be prevented from being emitted outside the high-frequency package.

  Hereinafter, embodiments of a high-frequency package, a transmission / reception module, and a radar apparatus according to the present invention will be described in detail with reference to the drawings. Note that the present invention is not limited to the embodiments.

Embodiment 1 FIG.
A first embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a functional block diagram of a radar apparatus 1 constituting a radio apparatus to which the present invention is applied. First, a functional internal configuration of the radar apparatus 1 will be described with reference to FIG.

  The radar apparatus 1 is an FM-CW radar that uses a millimeter wave band (for example, 76 GHz) electromagnetic wave and has a function of detecting a distance and a relative speed with a target (such as a vehicle) ahead. FM-CW radar irradiates a target with a frequency-modulated high-frequency signal (transmission signal), detects the difference between the signal reflected from the target (reception signal) and the transmission signal, and uses that frequency to reach the target. The distance and relative speed are calculated.

  In FIG. 1, a radar apparatus 1 includes a high-frequency package 2, a control circuit 3 for driving and controlling various high-frequency semiconductor elements in the high-frequency package 2, a transmission / reception module 6 including a modulation circuit 4, an antenna 7 on which a transmission / reception antenna is formed, A signal processing board 8 that is connected to an external device and performs various signal processing is provided.

  The signal processing board 8 has a function of controlling the entire radar apparatus 1 and performs a frequency analysis process such as FFT (Fast Fourier Transform) on the basis of a video signal obtained from the transmission / reception module 6, thereby achieving a target. The distance and relative speed are calculated.

  The modulation circuit 4 outputs a frequency modulation voltage for transmission in accordance with the control signal from the signal processing board 8. The control circuit 3 operates in accordance with an input control signal (such as a synchronous clock), and outputs a bias voltage, a MMIC (Monolithic Microwave IC) control signal, a modulation signal, and the like to the package 2.

  The high frequency package 2 includes a voltage controlled oscillator (VCO) 30, a power distributor 32, a multiplier 33, an amplifier 34, a transmission terminal 35 including a waveguide terminal, a reception terminal 36, a low noise An amplifier (LNA) 38 and a mixer (MIX) 39 are provided. The size of the high frequency package 2 is, for example, 10 to 40 mm square.

  Next, the operation will be described. The voltage controlled oscillator 30 outputs a frequency modulated high frequency signal. The power distributor 32 distributes the output of the voltage controlled oscillator 30 in two directions. The multiplier 33 receives one output of the power distributor 32, multiplies the frequency by N times (N ≧ 2), and outputs the result. The amplifier 34 amplifies the output of the multiplier 33 and outputs a transmission signal toward the transmission terminal 35. This transmission signal is sent to the antenna 7 via a waveguide such as a waveguide, and is irradiated to the space.

  The antenna 7 receives the received wave reflected from the target. The received wave output from the antenna 7 is input to the amplifier 38 via the reception terminal 36. The amplifier 38 amplifies the output from the antenna 7 with low noise. The mixer 39 outputs to the signal processing board 8 a video signal having a frequency that is the sum and difference of the N-frequency signal of the high-frequency signal input from the power distributor 32 and the output frequency of the amplifier 38. The signal processing board 8 performs a frequency analysis process such as FFT (Fast Fourier Transform) based on the video signal, thereby calculating the distance to the target and the relative speed. The calculated distance to the target and the relative speed are transmitted to the external device.

  The radar apparatus 1 includes a transmission / reception module 6, a signal processing board 8, a cable 13 including a power supply line to the signal processing board 8, an input / output signal line, and the like.

  FIG. 2 is a cross-sectional view showing the configuration of the transmission / reception module 6. As shown in FIG. 2, the transmission / reception module 6 includes a waveguide plate 17 on which a waveguide 16 connected to the transmission terminal 35 and the reception terminal 36 of FIG. 1 is formed. An antenna 7 is connected to the lower surface of the waveguide plate 17. The transceiver module 6 is a module control board (control) on which the high frequency package 2 mounted on the upper surface of the waveguide plate 17 and the electronic circuit 19 constituting the control circuit 3 or the modulation circuit 4 of FIG. / Also referred to as an interface board) 21. In FIG. 2, as a component of the high-frequency package 2, a grounded metal carrier 22, a multilayer dielectric substrate 23, a seal ring 24, a cover 25, and the like are shown.

  FIG. 3 is a perspective view of the high-frequency package 2, and FIG. 4 is a perspective view of the high-frequency package 2 with the cover removed. In the figure, the side surface of the multilayer dielectric substrate 23 has a shelf shape, and an external terminal 51 is formed on the top surface of the shelf. In FIG. 4, an attachment surface X <b> 1 of the cover 25 is formed on the upper surface side of the multilayer dielectric substrate 23. Further, cavities X2 and X3 are formed facing the upper surface of the multilayer dielectric substrate 23. A smaller concave cavity 40 is provided in the cavities X2 and X3. In the cavity 40, the MMIC 37 is accommodated and mounted.

  Next, FIG. 5 is a plan view showing the high-frequency package 2 with the cover 25 removed. As shown in FIGS. 2 and 5, on the waveguide plate 17 on which the waveguide 16 is formed, a grounded metal carrier 22 and the electrons constituting the control circuit 3 and the modulation circuit 4 are provided. A module control board 21 on which the circuit 19 and the like are mounted is mounted. A waveguide 27 is also formed on the carrier 22, and the carrier 22 is fixed to the waveguide plate 17 by inserting a screw 26 into a screw hole 26 a formed in the flange 28. A multilayer dielectric substrate 23 is mounted on the carrier 22, and one to a plurality of (in this case, two) recesses, that is, cavities 40 are formed in the central portion of the multilayer dielectric substrate 23.

  A repetitive high frequency semiconductor (MMIC) 43 contained in the high frequency package 2 of FIG. 1 is accommodated on the bottom surface (upper surface) 41 of the cavity 40. The high-frequency semiconductor 43 referred to here is a voltage-controlled oscillator (VCO) 30, a power divider 32, a multiplier 33, an amplifier 34, a low-noise amplifier (LNA) 38, or a mixer (MIX) included in the high-frequency package 2 of FIG. ) 39 is a general term.

  As shown in FIG. 5, one (upper side in the drawing) cavity 40 accommodates a receiving high-frequency semiconductor such as a low noise amplifier (LNA) 38 or a mixer (MIX) 39, and the other (lower side in the drawing) cavity. In 40, a transmission system high-frequency semiconductor such as a voltage controlled oscillator (VCO) 30, a power distributor 32, a multiplier 33, and an amplifier 34 is accommodated.

  A metal frame-shaped seal ring 24 that shields unnecessary radiation from the high-frequency semiconductor 43 to the outside is mounted on the multilayer dielectric substrate 23, and a cover 25 is provided on the seal ring 24. The seal ring 24 and the cover 25 constitute an electromagnetic shield member that covers a part of the surface layer of the multilayer dielectric substrate 23 and the high-frequency semiconductor 43.

  As shown in FIG. 5, the seal ring 24 ′ for defining the two cavities 40 is provided with a feedthrough 42, and a mixer (MIX) 39 accommodated in the upper cavity 40 and a lower side are provided. The power distributor 32 accommodated in the cavity 40 is connected by a feedthrough 42 and a microstrip line 45. The feedthrough 42 is configured so as to cover the signal pin or the microstrip line with a dielectric, whereby a high frequency signal is transmitted between the two cavities 40 while keeping the airtight state in each cavity 40. In FIG. 5, reference numeral 46 is a microstrip-waveguide converter.

  Further, a conductor pad (hereinafter referred to as a bias / control signal pad) for supplying a bias voltage to the high frequency semiconductor 43 or inputting / outputting a control signal to / from the high frequency semiconductor 43 is provided on the multilayer dielectric substrate 23 side. ) 50 is provided. A conductor pad (bias / control signal terminal) 49 is also provided on the high-frequency semiconductor 43 side. Between the bias / control signal pad 50 and the conductor pad 49 of the high-frequency semiconductor 43, or between the high-frequency semiconductor 43 and the microstrip line 45, wire bonding connection is made by a wire 44 made of gold or the like. In addition, it may replace with the connection by the wire 44, and you may make it take these connections by a metal bump or a ribbon.

  An external terminal 51 is provided on the multilayer dielectric substrate 23 outside the seal ring 24. As shown in FIG. 6, the external terminal 51 is formed on the multilayer dielectric substrate 23 inside the seal ring 24 via the signal via 65 (signal through hole) formed in the multilayer dielectric substrate 23 and the inner layer signal line 60. Are electrically connected to a bias / control signal pad 50 provided in the circuit. These external terminals 51 are connected to external terminals 52 formed on the module control board 21 via wires 41 as shown in FIG. As shown in FIG. 2, a resistance film 80 is attached to the inner layer signal line 60, and the resistance film 80 suppresses leakage of high frequency components (unwanted waves) to the outside via the inner layer signal line 60. I am doing so. The resistance film 80 will be described later in detail.

  FIG. 6 is a diagram showing in detail the via structure (through-hole structure) in the multilayer dielectric substrate 23 of the high-frequency package 2. In FIG. 6, bias / control signal vias (hereinafter referred to as signal vias) 65 are shown in white, and ground vias 75 are shown in hatching. In this case, the multilayer dielectric substrate 23 has the cavity 40 formed by deleting the central portion of the first layer of the multilayer dielectric substrate 23. A ground surface 53 as a surface layer ground conductor is formed on the bottom surface of the cavity 40, that is, the surface of the third layer, and the high frequency semiconductor 43 is mounted on the ground surface 53 via solder or a conductive adhesive 54. . A plurality of ground vias 75 a that connect between the ground surface 53 and the carrier 22 are provided on the ground surface 53 disposed under the high-frequency semiconductor 43.

  In this case, the side wall 55 (the side wall surface of the first layer of the multilayer dielectric substrate 23) 55 of the cavity 40 is in a state where the dielectric is exposed. The surface layer (upper surface layer) of the first layer of the multilayer dielectric substrate 23 is provided with one to a plurality of bias / control signal pads 50. The dielectric around the bias / control signal pads 50 is Except for the exposed portion 56, a ground pattern 57 is formed as a surface layer ground conductor to prevent a high frequency signal from entering the multilayer dielectric substrate 23 through the surface layer.

  An RF shield via 75 b for shielding a high frequency component generated from the high frequency semiconductor 43 is provided in the vicinity of the first layer of the multilayer dielectric substrate 23 immediately below the seal ring 24. A plurality of RF shield vias 75b are also arranged in a direction perpendicular to the paper surface. In the first layer of the multilayer dielectric substrate 23, a region from the side wall 55 of the cavity 40 to a place where the RF shield via 75 b is provided is referred to as a cavity side edge portion 71. The ground pattern 57 provided on the surface layer of the cavity side edge portion 71 is referred to as a side edge surface layer ground pattern. The RF shield via 75 b is connected to the side edge surface ground pattern 57 and the inner layer ground conductor 70 formed in the inner layer of the multilayer dielectric substrate 23.

  The bias / control signal pad 50 disposed inside the seal ring 24 includes an external terminal 51 disposed outside the seal ring 24 via one to a plurality of signal vias 65 and one to a plurality of inner layer signal lines 60. It is connected. Around the signal via 65, a plurality of ground vias 75c are arranged with a dielectric interposed therebetween, and the electric field from the signal via 75 is shielded by the plurality of ground vias 75c.

  In FIG. 6, the inner layer ground conductor 70 is shown in a simplified manner. However, the inner layer ground conductor 70 is basically a solid ground layer as shown in FIGS. 7-1 to 7-4 and FIG. As shown in FIG.

  FIGS. 7-1 to 7-4 show the situation around the two signal vias 65 arranged on the left side in FIG. 6 between the respective layers. FIG. 7-1 (Surface A) shows the situation between the first layer and the second layer, and FIG. 7-2 (Surface B) shows the situation between the third layer and the fourth layer. 7-3 (surface C) shows the situation between the fourth layer and the fifth layer, and FIG. 7-4 (surface D) shows the situation between the fifth layer and the carrier 22. Is shown.

  In FIG. 7-1 (surface A) and FIG. 7-2 (surface B), a plurality of ground vias 75 and inner-layer ground conductors 70 are arranged around two signal vias 65 with a dielectric 61 interposed therebetween. Yes. In FIG. 7-3 (surface C), two signal vias 65 and an inner layer signal line 60 connecting the two signal vias 65 are arranged, and around these signal vias 65 and the inner layer signal line 60. A plurality of ground vias 75 and an inner layer ground conductor 70 are arranged with the dielectric 61 interposed therebetween. Further, a resistance film 80 for suppressing leakage of high frequency components to the outside is attached to the inner layer signal line 60, and a tip open line 83 is formed on the inner layer signal line 60. In FIG. 7-4 (surface D), the signal via 65 and the inner layer signal line 60 are not disposed, and only the ground via 75 and the inner layer ground conductor 70 are disposed.

  FIG. 8 shows an example of a wiring pattern of an arbitrary layer. As shown in FIG. 8, a plurality of ground vias 75 and an inner layer ground conductor 70 are disposed around the signal via 65 with a dielectric 61 interposed therebetween. Further, at the location where the inner layer signal line 60 exists, a plurality of ground vias 75 and further an inner layer ground conductor 70 are arranged around the inner layer signal line 60 connected to the signal via 65 with the dielectric 61 interposed therebetween. Yes. Also in FIG. 8, the inner layer signal line 60 is attached with a resistance film 80 for suppressing leakage of high frequency components to the outside.

  Here, the high frequency package 2 shown in FIGS. 2 to 8 includes the following three characteristic configurations (a) to (c).

  (A) As shown in FIGS. 2 and 6 to 8, a resistance film 80 is provided on at least one of the upper surface and the lower surface of the inner layer signal line 60. As a result, the high frequency signal entering through the dielectric 56 around the side wall 55 of the cavity 40 or the bias / control signal pad 50 and coupled to the signal via 65 or the inner signal line 60 is absorbed by the resistor by the skin effect. At the same time, the DC voltage for bias or the low / medium frequency signal for control signal is passed without voltage drop. With such a configuration, a high frequency signal is prevented from being radiated to the outside of the high frequency package 2 via the signal via 65 or the inner layer signal line 60 and the external terminal 51.

  (B) A direction in which a plurality of ground vias (also referred to as side wall ground vias) 81 are along the side wall 55 in the vicinity of the side wall 55 at the cavity side edge portion 71 (a direction perpendicular to the paper surface of FIG. 6, hereinafter referred to as a depth direction). One side wall ground via row 82 formed side by side is provided. The interval between the side wall ground via row 82 and the RF shield via row 84 (the via row composed of the RF shield via 75b that is the shortest distance from the signal via) that is the shortest distance across the signal via 65 is set as the high frequency package 2. It is set as a value less than 1/2 of the effective wavelength λg of the high-frequency signal used in the inside. In addition, the distance between adjacent ground vias in each of the ground via rows 82 and 84 is also set to a value less than λg / 2. This suppresses the high-frequency signal from entering the side wall 55 of the cavity 40 and suppresses the passage of the high-frequency signal in the depth direction. For this reason, it is possible to suppress the high-frequency component from being coupled into the cavity side edge portion 71, and the high-frequency signal can be suppressed through the dielectric 56 around the bias / control signal pad 50, the side wall 55 of the cavity 40, and the like. Even if the light enters the multilayer dielectric substrate 23, the amount of passage in the depth direction is small, so that coupling of high-frequency signals to the signal via 65 or the inner layer signal line 60 can be suppressed. Therefore, it is possible to prevent the high frequency signal from being radiated to the outside of the high frequency package 2 through the signal via 65, the inner layer signal line 60, and the external terminal 51.

  (C) As shown in FIGS. 6 and 7-3, the inner layer signal line 60 has an open end having a length of 1/4 ± 10% of the effective wavelength λg of the high-frequency signal used in the high-frequency package 2. A line 83 is provided. Since such an open end line 83 is provided, a high frequency signal coupled to the signal via 65 or the inner layer signal line 60 via the dielectric 56 around the side wall 55 of the cavity 40 or the bias / control signal pad 50. Can be reflected at the position of the open-ended line 83, thereby suppressing the high-frequency signal from passing beyond the open-ended line 83 and suppressing leakage of high-frequency components to the outside via the external terminal 51. Can do.

  As described above, the high-frequency package 2 includes the above-described characteristic configurations (a) to (c), thereby suppressing unnecessary waves from being emitted to the outside in the high-frequency package 2.

  The characteristic configurations (b) and (c), which are the main parts of the present invention, will be described in detail below with reference to FIGS. FIG. 9 shows a simplified high-frequency package 2 shown in FIGS. 3 to 5. The high-frequency package 2 having one cavity 40 of the two cavities 40 shown in FIGS. Show. FIG. 10 shows a state cut along line AA in FIG. FIG. 9 shows a state where the cover 25 is removed.

  In FIG. 9, the high-frequency package 2 includes the grounded metal carrier 22, the multilayer dielectric substrate 23, the seal ring 24, the cavity 40, the feedthrough 42, the high-frequency semiconductor 43, the wire 44, and the microstrip as described above. A line 45, a bias / control signal pad 50, an external terminal 51, a dielectric 56 around the bias / control signal pad 50, a ground 57 formed on the surface of the multilayer dielectric substrate 23, and the like.

  The high frequency package 2 is provided with an external terminal 51, and the external terminal 51 is electrically connected to the bias / control signal pad 50 via the signal via 65 and the inner layer signal line 60. On the surface layer of the high-frequency package 2, except for the microstrip line 45, the bias / control signal pad 50, and the surrounding dielectric 56, a ground pattern ( In FIG. 9, only the side edge surface ground pattern 57 is shown). The side edge surface ground pattern 57 is connected to the inner layer ground conductor 70 (see FIG. 6) via ground vias 81 and 75b and the like. Here, in the high frequency package 2, as described above, the dielectric of the multilayer dielectric substrate 23 is exposed on the side wall 55 of the cavity 40.

  The high-frequency signal used in the high-frequency semiconductor 43 is connected to the microstrip line 45 by, for example, a wire 44 and transmitted to the high-frequency semiconductor 43 in the other cavity 40 by the feedthrough 42 or the like. A bias / control signal for driving or controlling the high-frequency semiconductor 43 passes through the bias / control signal pad 50 from the external terminal 51 via the signal via 65 and the inner layer signal line 60, and this bias / control signal pad 50. Is applied to the high-frequency semiconductor 43 via the wire 44. The ground pattern and ground via provided in the high frequency package 2 suppress the coupling of the high frequency signal component radiated from the high frequency semiconductor 43 or the microstrip line 45 to the bias / control signal.

  Next, the characteristic configuration (b) described above will be described in detail. As shown in FIGS. 10 and 11, a side wall ground via row 82 in which a plurality of side wall ground vias 81 are arranged in the depth direction K is provided in the vicinity of the side wall 55 of the cavity 40 in the multilayer dielectric substrate 23. Provide. Then, the interval between the side wall ground via row 82 and the ground via row 84 constituted by a plurality of ground vias 75 b located at the shortest distance from the side wall ground via row 82 across the signal via 65 is set in the high frequency package 2. It is set as a value less than 1/2 of the effective wavelength λg of the high-frequency signal to be used. The interval t between adjacent ground vias in each of the ground via rows 82 and 84 is also set to a value less than λg / 2.

  On the other hand, FIG. 12 shows a configuration in the case where the side wall ground via row 82 is not provided in the vicinity of the side wall 55 constituting the cavity 40. When the side wall ground via array 82 is not provided as shown in FIG. 12, the side wall 55 operates as a magnetic wall in terms of high frequency, and therefore the electric field distribution as shown in FIG. 12 with the magnetic wall as the axis of symmetry of the maximum electric field value. Occurs. Here, when the distance from the side wall 55 to the ground via row 84 is La, wavelength components whose half wavelength is 2 La or less can pass in the depth direction K, and only wavelength components whose half wavelength is longer than 2 La cannot pass in the depth direction K. It becomes possible.

  Therefore, as shown in FIG. 12, when La ≧ λg / 4, the high frequency component of the effective wavelength λg can pass in the depth direction K. For this reason, as shown in FIG. 12, when the side wall ground via row 82 is not provided near the side wall 55 and the distance from the side wall 55 to the ground via row 84 is ¼ or more of the effective wavelength λg, 55 or a high frequency component that has entered through the dielectric 56 around the bias / control signal pad 50 is coupled in the cavity side edge 71, which passes in the depth direction K and couples to the bias / control signal. It leaks through the signal via 65, the inner layer signal line 60, and the external terminal 51.

  However, in the configuration shown in FIGS. 10 and 11, first, the interval t between adjacent ground vias in the ground via rows 82 and 84 is set to a value less than λg / 2. As a result, the adjacent ground vias 81 and 81 (or 75b and 75b) function as cut-off waveguides, respectively, and it is possible to suppress entry of high-frequency components from the side wall 55.

  Further, in the configuration shown in FIGS. 10 and 11, the interval between the sidewall ground via row 82 and the ground via row 84 is set as a value less than ½ of the effective wavelength λg. For this reason, the portion between the side wall ground via row 82 and the ground via row 84 functions as a cut-off waveguide, and its pass characteristic shows a characteristic like a high-pass filter as shown by a curve b in FIG. The amount of passage in the vicinity of the frequency f0 and in the frequency region lower than f0 can be reduced.

  FIG. 13 shows a case where the interval between the side wall ground via row 82 and the ground via row 84 is set to a value less than 1/2 of the effective wavelength λg of the high frequency signal, or 1/2 or more in the configuration of FIG. Further, as shown in FIG. 12, the depth at the cavity side edge 71 when the side wall ground via row 82 is not provided and La ≧ λg / 4 and when La <λg / 4 are satisfied. It shows the pass characteristic of the high frequency signal component in the direction K. A curved line a indicated by a broken line indicates the side wall ground via array 82 when the interval between the side wall ground via array 82 and the ground via array 84 is set to ½ or more of the effective wavelength λg in the configuration of FIG. 11, or as shown in FIG. This corresponds to the case where La is not provided and La ≧ λg / 4. A curve b shown by a solid line is obtained when the interval between the sidewall ground via array 82 and the ground via array 84 is set to a value less than ½ of the effective wavelength λg of the high frequency signal in the configuration of FIG. 11, or as shown in FIG. This corresponds to the case where the side wall ground via row 82 is not provided and La <λg / 4 (configuration shown in FIG. 22).

  In FIG. 13, f0 is a frequency corresponding to the effective wavelength λg of the high-frequency signal used in the high-frequency package 2, and if the frequency of the transmission wave transmitted from the radar apparatus 1 is 76 GHz, f0 = 76 GHz. . As shown by curve a in FIG. 13, when side wall ground via row 82 is not provided and La ≧ λg / 4, or side wall ground via row 82 is provided as shown in FIG. When the distance between the row 82 and the ground via row 84 is ½ or more of the effective wavelength λg, the amount of passage of the high-frequency signal in the depth direction K at the frequency f0 corresponding to the effective wavelength λg is large.

  However, as shown in FIG. 10 or FIG. 11, when the interval between the sidewall ground via row 82 and the ground via row 84 is set to a value less than 1/2 of the effective wavelength λg of the high frequency signal, as described above, As shown by the curve b in FIG. 13, the pass characteristic in the depth direction K shows a characteristic like a high-pass filter, and the amount of pass in the vicinity of the frequency f0 and in the lower frequency region than f0 can be reduced. Therefore, even if an unwanted wave enters the multilayer dielectric substrate 23 through the dielectric 56 around the bias / control signal pad 50 and the side wall 55 of the cavity 40, the depth direction at the cavity side edge 71 is increased. Therefore, the amount of high frequency signals coupled to the signal via 65 or the inner layer signal line 60 can be suppressed. Therefore, unnecessary waves radiated to the outside of the high-frequency package 2 through the signal via 65, the inner layer signal line 60, and the external terminal 51 can be suppressed. Incidentally, FIG. 11 shows the electric field distribution when the side wall ground via row 82 is provided.

  Further, in this type of radar apparatus, since the transmission signal is often generated by multiplying the oscillation signal, when the transmission frequency is 76 GHz, frequency components such as 38 GHz, 19 GHz,... Thus, the coupling to the signal via 65 or the inner layer signal line 60 can be suppressed.

  As shown in FIG. 11, the dielectric 56 is exposed around the bias / control signal pad 50, but a side edge surface layer ground pattern is formed at a position close to the side wall 55 in the exposed position. 57 and the side wall ground via 81 are not formed. This is because, when the side edge surface ground pattern 57 and the sidewall ground via 81 are formed at this location, the wire 44 mistakenly contacts these grounds when wire bonding of the wire 44 to the bias / control signal pad 50 is performed. This is because there is a possibility. Of course, if this point is not taken into account, it is better to cover the entire periphery of the bias / control signal pad 50 with the side edge surface ground pattern 57 and provide the side wall ground via 81 to prevent external leakage of high frequency components. It is preferable in terms of suppression.

  Further, in the high frequency package 2 shown in FIG. 9, the microstrip line 45 extending in the depth direction K is provided, and the cavity side edge portion 71 a located on both sides of the microstrip line 45 has J perpendicular to the depth direction K. It is necessary to suppress the amount of high frequency components passing in the direction. In this case, since the ground via row 74 is formed on both sides of the microstrip line 45 to prevent leakage of high frequency components in the J direction, the length of the cavity side edge 71a in the K direction is reduced. It is not necessary to particularly define d by the effective wavelength λg.

(Deformation mode 1 of characteristic configuration (b))
FIG. 14 shows a modification 1 of the configuration of FIG. In FIG. 14, the plurality of side wall ground vias 81 have a shape that is vertically divided, and are disposed in contact with the side walls 55 that constitute the cavity 40.

  Also in the case of FIG. 14, the interval between the side wall ground via row 82 composed of a plurality of side wall ground vias 81 and the ground via row 84 is set as a value less than ½ of the effective wavelength λg, and each ground via is set. The interval t between adjacent ground vias in columns 82 and 84 is also set as a value less than λg / 2. Therefore, in the configuration of FIG. 14 as well, it is possible to suppress the entry of unnecessary waves into the side wall 55 of the cavity 40 and to suppress the passage of unnecessary waves in the depth direction K, even if the bias / control signal pad 50 is used. Even if an unnecessary wave enters the cavity side edge 71 through the dielectric 56 surrounding the cavity 40 and the side wall 55 of the cavity 40, the coupling of the high frequency signal to the signal via 65 or the inner layer signal line 60 can be suppressed. For this reason, it is possible to suppress unnecessary waves from being radiated to the outside of the high-frequency package 2 through the signal via 65, the inner layer signal line 60, and the external terminal 51.

(Deformation mode 2 of characteristic configuration (b))
FIG. 15 shows a modification 2 of the configuration of FIG. In the configuration of FIG. 15, the side wall 55 constituting the cavity 40 is entirely metallized with a ground pattern 85. Further, the interval between the ground pattern 85 and the ground via row 84 is set as a value less than ½ of the effective wavelength λg, and the interval t between adjacent ground vias in each ground via row 84 is less than λg / 2. It is set as a value. Therefore, in the configuration shown in FIG. 15, it is possible to completely suppress the entry of unnecessary waves into the side wall 55 of the cavity 40. Even if an unnecessary wave enters the multilayer dielectric substrate 23 through the dielectric 56 around the bias / control signal pad 50, the amount of high-frequency signal coupling to the signal via 65 or the inner layer signal line 60 is suppressed. In addition, it is possible to suppress unnecessary waves from being radiated to the outside of the high-frequency package 2 through the signal via 65, the inner layer signal line 60, and the external terminal 51.

  Next, the characteristic configuration (c) described above will be described in detail. As shown in FIGS. 10 and 16, the inner layer signal line 60 connected to the bias / control signal pad 50 is provided with an open-end line 83 having a length of 1/4 ± 10% of the effective wavelength λg. I am doing so. By providing such an open-ended line 83, a high-frequency line segment coupled to the signal via 65 or the inner signal line 60 via the side wall 55 of the cavity 40 or the dielectric 56 around the bias / control signal pad 50 can be obtained. Passing to the inner layer signal line 60 ahead of the open end line 83 is suppressed, and thereby leakage of high frequency components to the outside through the external terminal 51 is suppressed.

  On the other hand, as shown in FIG. 17, when the inner layer signal line 60 is not provided with the open end line 83, the high frequency line segment coupled to the signal via 65 or the inner layer signal line 60 passes through the inner layer signal line 60. As a result, the external terminal 51 leaks to the outside.

  FIG. 18 shows the high-frequency component passing characteristics between the bias / control signal pad 50 and the external terminal 51. The curve d shows the case where the open end line 83 is not provided as shown in FIG. As shown in the figure, the case where the open-ended line 83 having a length of 1/4 ± 10% of the effective wavelength λg is provided is shown. As can be seen from the curve c in FIG. 18, when the open end line 83 is not provided, the amount of passage is increased over the entire frequency band, so that when a high frequency component is coupled to the signal via 65 or the inner layer signal line 60, the external Until then, the high frequency components will leak.

  On the other hand, when the open-ended line 83 having a length of ¼ ± 10% of the effective wavelength λg is provided, as can be seen from the curve d in FIG. In the vicinity band of the frequency f0 corresponding to the effective wavelength λg, the passing amount can be extremely reduced. For this reason, it is possible to prevent the high-frequency line segment coupled to the signal via 65 or the inner layer signal line 60 from passing to the inner layer signal line 60 ahead of the open-ended line 83, thereby preventing leakage of high-frequency components to the outside. It becomes possible to suppress.

  As described above, according to the first embodiment, since the above-described characteristic configurations (a) to (c) are provided, the high-frequency component can be shielded inside the high-frequency package 2. As a result, leakage of high frequency components to the outside of the high frequency package can be suppressed. Accordingly, it is possible to realize a high-frequency package, a transmission / reception module, and a wireless device with high cost and high-frequency shielding performance.

  In the first embodiment, the present invention is applied to the high-frequency package 2 configured to accommodate the high-frequency semiconductor 43 in the cavity 40 formed in the multilayer dielectric substrate 23. (A)-(c) is applicable also to the high frequency package 2 of the structure which mounts the high frequency semiconductor 43 on the surface layer of the multilayer dielectric substrate 23 which does not have the cavity 40. FIG.

Embodiment 2. FIG.
A second embodiment of the present invention will be described with reference to FIG. In the second embodiment, the open-ended line 83 used in the first embodiment is changed to a low-pass filter (low-pass filter) 86 composed of a combination of a plurality of open-ended lines. FIG. 20 shows the pass characteristics of the low-pass filter 86. According to the low-pass filter 86, the frequency component of a predetermined frequency f1 or higher that is lower than the frequency f0 corresponding to the effective wavelength λg of the high-frequency signal. To cut. This low-pass filter 86 is effective when there are many wavelength components having values close to the effective wavelength λg.

  According to the second embodiment, since the low-pass filter 86 is provided in the inner layer signal line 60, the high-frequency line segment coupled to the signal via 65 or the inner layer signal line 60 is ahead of the low-pass filter 86. Passing up to the inner layer signal line 60 can be suppressed, and thereby leakage of high-frequency components to the outside can be suppressed.

Embodiment 3 FIG.
A third embodiment of the present invention will be described with reference to FIGS. FIG. 21 shows a high-frequency package 2 ′ according to the third embodiment. In this high-frequency package 2 ′, components that achieve the same functions as those of the high-frequency package 2 shown in FIG. The same reference numerals are given, and duplicate descriptions are omitted.

  The high-frequency package 2 ′ shown in FIG. 21 is mounted on both sides, and a high-frequency semiconductor (or electronic circuit component related to the high-frequency semiconductor) 66 is also mounted on the back surface of the multilayer dielectric substrate 23. The high frequency semiconductor 66 is shielded by the carrier 22 and the back cover 67.

  In the high frequency package 2 ′ of the third embodiment, the side wall ground via 81 shown in FIG. 11 or the ground pattern 85 shown in FIG. 15 is not provided in the vicinity of the side wall 55 constituting the cavity 40. 55 is in a non-grounded state where the dielectric is exposed. As shown in FIGS. 21 and 22, the high-frequency package 2 ′ according to the third embodiment includes a side wall 55 and a plurality of ground vias 75 b that are at the shortest distance from the side wall 55 with the signal via 65 interposed therebetween. The distance from the ground via row 84 is set as a value less than ¼ of the effective wavelength λg of the high-frequency signal used in the high-frequency package 2.

  In the case of this configuration, the side wall 55 operates as a magnetic wall as in the case of FIG. 12, and has an electric field distribution similar to that shown in FIG. However, in this configuration, since the distance Lb between the side wall 55 and the ground via row 84 is set to be less than ¼ of the effective wavelength λg, the high frequency component of the effective wavelength λg does not pass in the depth direction K. It becomes possible. That is, the high-frequency signal having the effective wavelength λg is cut off in the depth direction K as shown in FIG.

  As described above, in the third embodiment, the high-frequency signal can enter the multilayer dielectric substrate 23 through the side wall 55, but the passage in the depth direction K can be suppressed. For this reason, the amount of coupling of the high frequency signal to the signal via 65 or the inner layer signal line 60 can be suppressed, and unnecessary waves are transmitted to the outside of the high frequency package 2 via the signal via 65, the inner layer signal line 60, and the external terminal 51. Radiation can be suppressed.

Embodiment 4 FIG.
Embodiment 4 of the present invention will be described with reference to FIG. The fourth embodiment is a modification of the third embodiment, and a part of the side edge surface layer ground pattern 57 formed on the upper surface of the cavity side edge 71 of the multilayer dielectric substrate 23 is removed, and this ground removal is performed. The portion 87 is different from the third embodiment only in that the dielectric is exposed. The distance Lb between the side wall 55 where the dielectric is exposed and the ground via array 84 is set to be less than ¼ of the effective wavelength λg.

  Since the ground removal portion 87 is provided, the high frequency component coupled inside the cavity side edge portion 71 can be discharged to the internal space surrounded by the seal ring 24 and the cover 25 through the ground removal portion 87. . That is, in this case, the high frequency component that has entered the inside of the cavity side edge portion 71 is extracted upward via the ground removal portion 87. As described above, in the fourth embodiment, the high-frequency component coupled inside the cavity side edge 71 can be released to the internal space, so that the amount of coupling to the bias or control signal can be further reduced. . Therefore, it is possible to further suppress the unnecessary waves from being radiated to the outside of the high frequency package.

  In addition, you may make it provide the ground extraction part 87 in the cavity side edge part 71 of the high frequency package 2 of previous Embodiment 1. FIG.

Embodiment 5. FIG.
A fifth embodiment of the present invention will be described with reference to FIGS. 24 and 25-1 to 25-4. In the fifth embodiment, the invention having the characteristic configuration (b) described in the first embodiment is applied to a high-frequency package 91 on which a flip-chip mounted high-frequency semiconductor (MMIC) 90 is mounted.

  The flip-chip mounted high frequency semiconductor 90 shown in FIG. 24 has a large number of bumps 92 on the bottom surface, and the high frequency semiconductor 90 and the multilayer dielectric substrate 23 are connected via the bumps 92. FIG. 25A shows an example of the rear surface of the high-frequency semiconductor 90, that is, the arrangement of the bumps 92. In this case, the ground bumps 92b shown in black are arranged around the signal bumps 92a shown in white.

  A multilayer dielectric substrate 23 is formed on the grounded carrier 22. The above-described seal ring 24 and cover 25 are formed on the multilayer dielectric substrate 23, and the high-frequency semiconductor 90 is shielded by the seal ring 24 and cover 25. The high-frequency semiconductor 90 is flip-chip mounted on a conductor pad 94 provided on the surface layer of the multilayer dielectric substrate 23. Similar to the high-frequency package 2 of FIG. 6 shown in the first embodiment, a surface layer ground conductor 93, an inner layer ground conductor 70, and an inner layer signal line 60 are appropriately formed on each layer of the multilayer dielectric substrate 23. 70, the surface ground conductor 93 and the carrier 22 are connected by a ground via 75. The signal bump 92 a and the external terminal 51 are connected by a signal via 65 and an inner layer signal line 60.

  FIG. 25-2 (Surface A) shows a part of the via structure of the first layer immediately below the high-frequency semiconductor 90. The signal via 65 and the ground via correspond to the arrangement of the signal bump 92a and the ground bump 92b. 75 is arranged. FIG. 25-3 (surface B) shows a part of the via structure in the surface layer of the second layer immediately below the high-frequency semiconductor 90, and FIG. 25-4 (surface C) shows the third structure immediately below the high-frequency semiconductor 90. This shows a part of the via structure of the surface layer, and the inner layer signal line 60 is formed on the third surface layer shown as the plane C.

  When mounting such a high-frequency semiconductor 90, as shown in FIGS. 24 and 25-2, intervals D 1 and D 2 between the ground vias 75 (ground via row) sandwiching the signal via 65 are provided in the high-frequency package 91. The frequency is set to be less than ½ of the effective wavelength λg of the high-frequency semiconductor 90 to be mounted.

  Thereby, in the fifth embodiment, it is possible to suppress the high frequency component from being coupled to the signal via 65 and further to the inner layer signal line 60, and the high frequency component can be suppressed via the signal via 65, the inner layer signal line 60, and the external terminal 51. The component can be prevented from being radiated to the outside of the high frequency package 2.

  Note that the above-described characteristic configurations (a) and (c) may be applied to a flip-chip mounted high-frequency package.

  As described above, the high-frequency package, the transmission / reception module, and the radar device according to the present invention are useful for reducing the price of the radio device using electromagnetic waves in the millimeter wave band and the microwave band.

It is a functional block diagram of FM-CW radar to which this invention is applied. It is sectional drawing which shows the structure of a transmission / reception module. 1 is a perspective view of a high frequency package according to Embodiment 1. FIG. It is a perspective view of the state where the cover of the high frequency package of Embodiment 1 was removed. FIG. 3 is a plan view of the high frequency package according to the first embodiment. It is sectional drawing which shows the via structure of the multilayer dielectric substrate of a high frequency package in detail. It is a figure which shows the state of the surface A of the multilayer dielectric substrate of FIG. It is a figure which shows the state of the surface B of the multilayer dielectric substrate of FIG. It is a figure which shows the state of the surface C of the multilayer dielectric substrate of FIG. It is a figure which shows the state of the surface D of the multilayer dielectric substrate of FIG. It is a top view which shows the example of arrangement | positioning patterns, such as an inner layer signal track | line, an inner layer ground conductor, a ground via, and a signal via. It is a perspective view which shows the simple internal structure of a high frequency package. FIG. 10 is a partially enlarged view of FIG. 9. FIG. 11 is a partially enlarged view of FIG. 10. It is a figure which shows a prior art. It is a figure which shows the passage characteristic to the depth direction of a high frequency component. FIG. 6 is a perspective view showing a modification of the first embodiment. FIG. 12 is a perspective view showing another modification of the first embodiment. FIG. 11 is a partially enlarged view of FIG. 10. It is a figure which shows a prior art. It is a figure which shows the passage characteristic between a bias pad and an external terminal. FIG. 6 is a partially enlarged view of the high frequency package of the second embodiment. It is a figure which shows the passage characteristic of LPF of Embodiment 2. FIG. FIG. 6 is a cross-sectional view showing a high-frequency package according to a third embodiment. 6 is a partially enlarged view of the high-frequency package of Embodiment 3. FIG. FIG. 10 is a partially enlarged view of the high-frequency package according to the fourth embodiment. FIG. 10 is a cross-sectional view showing a high-frequency package according to a fifth embodiment. It is a figure which shows the back surface of the high frequency semiconductor mounted in the high frequency package of Embodiment 5. FIG. It is a figure which shows the state of the surface A of the multilayer dielectric substrate of FIG. It is a figure which shows the state of the surface B of the multilayer dielectric substrate of FIG. It is a figure which shows the state of the surface C of the multilayer dielectric substrate of FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Radar apparatus 2,2 ', 91 High frequency package 3 Control circuit 4 Modulation circuit 6 Transmission / reception module 7 Antenna 8 Signal processing board 10 Casing 12 Radome 13 Cable 14 Connector 16 Waveguide 17 Waveguide plate 19 Electronic circuit 21 Module control board 22 Carrier 23 Multilayer Dielectric Substrate 24 Seal Ring 25 Cover 30 Oscillator 32 Power Divider 33 Multiplier 35 Transmitting Waveguide Terminal 36 Receiving Waveguide Terminal 37 MMIC
39 Mixer 40 Cavity 42 Feedthrough 43, 66, 90 High-frequency semiconductor 41, 44 Wire 45 Microstrip line 50 Bias / control signal pad 51, 52 External terminal 53 Ground surface 55 Side wall 56, 61 Dielectric 57 Side surface ground Pattern 60 Inner layer signal line 65 Signal via 70 Inner layer ground conductor 71, 71a Cavity side edge 75, 75a, 75b, 75c Ground via 80 Resistance film 81 Side wall ground via 82 Side wall ground via line 83 Open end line 84 Ground via line (shield) Via line)
85 Ground pattern 86 Low-pass filter 87 Ground removal portion 92 Bump 92a Signal bump 92b Ground bump 93 Surface layer ground conductor 94 Conductor pad λg Effective wavelength

Claims (12)

In a high-frequency package comprising a high-frequency semiconductor, a multilayer dielectric substrate on which the high-frequency semiconductor is placed on a surface ground conductor, and a part of the surface layer of the multilayer dielectric substrate and an electromagnetic shield member that covers the high-frequency semiconductor,
The multilayer dielectric substrate;
A first signal via connected to the bias or control signal terminal of the high-frequency semiconductor and disposed inside the electromagnetic shield member;
A second signal via disposed outside the electromagnetic shield member and connected to an external terminal for bias or control signal;
An inner signal line connecting the first signal via and the second signal via;
An inner layer ground conductor disposed around the first signal via, the second signal via, and the inner layer signal line;
A plurality of ground vias on the inner layer ground conductor and disposed around the first signal via, the second signal via and the inner layer signal line;
With
A high-frequency package characterized in that an open-ended line having a length substantially ¼ of an effective wavelength of a high-frequency signal used in the high-frequency semiconductor is provided in the inner layer signal line. In a high-frequency package comprising a high-frequency semiconductor, a multilayer dielectric substrate on which the high-frequency semiconductor is placed on a surface ground conductor, and a part of the surface layer of the multilayer dielectric substrate and an electromagnetic shield member that covers the high-frequency semiconductor,
The multilayer dielectric substrate;
A first signal via connected to the bias or control signal terminal of the high-frequency semiconductor and disposed inside the electromagnetic shield member;
A second signal via disposed outside the electromagnetic shield member and connected to an external terminal for bias or control signal;
An inner signal line connecting the first signal via and the second signal via;
An inner layer ground conductor disposed around the first signal via, the second signal via, and the inner layer signal line;
A plurality of ground vias on the inner layer ground conductor and disposed around the first signal via, the second signal via and the inner layer signal line;
With
A high-frequency package characterized in that a low-pass filter for suppressing passage of a high-frequency signal used in the high-frequency semiconductor is provided in the inner layer signal line. A multilayer dielectric substrate having a high-frequency semiconductor, an inner-layer ground conductor mounted on the surface-layer ground conductor and connected to the surface-layer ground conductor, a part of the surface layer of the multilayer dielectric substrate, and the high-frequency semiconductor In a high frequency package comprising an electromagnetic shielding member to cover,
The multilayer dielectric substrate;
A first signal via connected to the bias or control signal terminal of the high-frequency semiconductor and disposed inside the electromagnetic shield member;
A second signal via disposed outside the electromagnetic shield member and connected to an external terminal for bias or control signal;
An inner signal line connecting the first signal via and the second signal via;
A first ground via row, which is disposed closer to the high-frequency semiconductor than the first signal via, and includes a plurality of ground vias connected to the inner-layer ground conductor;
A second ground via row that is arranged between the first signal via and the second signal via and is composed of a plurality of ground vias connected to the inner-layer ground conductor;
With
The interval between the first ground via row and the second ground via row is less than ½ of the effective wavelength of the high frequency signal used in the high frequency semiconductor,
A high-frequency package characterized in that an interval between adjacent ground vias in the first and second ground via rows is less than ½ of an effective wavelength of a high-frequency signal used in the high-frequency semiconductor. A high-frequency semiconductor and a cavity are formed, and the high-frequency semiconductor is placed on a surface ground conductor formed on the bottom surface of the cavity and has an inner-layer ground conductor connected to the surface ground conductor, and a sidewall that forms the cavity In a high frequency package comprising a multilayer dielectric substrate that is non-grounded, and an electromagnetic shielding member that covers a portion of the surface layer of the multilayer dielectric substrate and the high frequency semiconductor,
The multilayer dielectric substrate;
A first signal via connected to the bias or control signal terminal of the high-frequency semiconductor and disposed inside the electromagnetic shield member;
A second signal via disposed outside the electromagnetic shield member and connected to an external terminal for bias or control signal;
An inner signal line connecting the first signal via and the second signal via;
The first signal via is formed on a side closer to the high-frequency semiconductor than the first signal via and in the vicinity of the side wall of the multilayer dielectric substrate forming the cavity, and includes a plurality of ground vias connected to the inner-layer ground conductor. 1 ground via row,
A second ground via row that is arranged between the first signal via and the second signal via and is composed of a plurality of ground vias connected to the inner-layer ground conductor;
With
The interval between the first ground via row and the second ground via row is less than ½ of the effective wavelength of the high frequency signal used in the high frequency semiconductor,
A high-frequency package characterized in that an interval between adjacent ground vias in the first and second ground via rows is less than ½ of an effective wavelength of a high-frequency signal used in the high-frequency semiconductor.   5. The high-frequency package according to claim 4, wherein each ground via of the first ground via row has a part of the via exposed on a side wall of the multilayer dielectric substrate. A multilayer dielectric substrate having a high-frequency semiconductor, a cavity formed, and placing the high-frequency semiconductor on a surface ground conductor formed on a bottom surface of the cavity and having an inner ground conductor connected to the surface ground conductor, and the multilayer dielectric In a high frequency package comprising a part of a surface layer of a body substrate and an electromagnetic shield member covering the high frequency semiconductor,
The multilayer dielectric substrate;
A first signal via connected to the bias or control signal terminal of the high-frequency semiconductor and disposed inside the electromagnetic shield member;
A second signal via disposed outside the electromagnetic shield member and connected to an external terminal for bias or control signal;
An inner signal line connecting the first signal via and the second signal via;
A sidewall ground pattern formed on the sidewall of the multilayer dielectric substrate forming the cavity;
A ground via row comprising a plurality of ground vias disposed between the first signal via and the second signal via and connected to the inner layer ground conductor;
With
The interval between the side wall ground pattern and the ground via row is less than ½ of the effective wavelength of the high-frequency signal used in the high-frequency semiconductor,
A high frequency package characterized in that an interval between adjacent ground vias in the ground via row is less than ½ of an effective wavelength of a high frequency signal used in the high frequency semiconductor. A high-frequency semiconductor and a cavity are formed, and the high-frequency semiconductor is placed on a surface ground conductor formed on the bottom surface of the cavity and has an inner-layer ground conductor connected to the surface ground conductor, and a sidewall that forms the cavity In a high frequency package comprising a multilayer dielectric substrate that is non-grounded, and an electromagnetic shielding member that covers a portion of the surface layer of the multilayer dielectric substrate and the high frequency semiconductor,
A first signal via connected to the bias or control signal terminal of the high-frequency semiconductor and disposed inside the electromagnetic shield member;
A second signal via disposed outside the electromagnetic shield member and connected to an external terminal for bias or control signal;
An inner signal line connecting the first signal via and the second signal via;
A ground via row comprising a plurality of ground vias disposed between the first signal via and the second signal via and connected to the inner layer ground conductor;
With
The interval between the side wall and the ground via row is less than ¼ of the effective wavelength of the high frequency signal used in the high frequency semiconductor,
A high frequency package characterized in that an interval between adjacent ground vias in the ground via row is less than ½ of an effective wavelength of a high frequency signal used in the high frequency semiconductor.   8. The high frequency package according to claim 4, wherein a region where the dielectric is exposed is formed in a portion from the electromagnetic shielding member to the side wall on the surface of the multilayer dielectric substrate. .   9. The second ground via row or the ground via row is arranged immediately below a portion where the electromagnetic shield member is in contact with the multilayer dielectric substrate. High frequency package.   The first signal via is connected to a conductor pad formed on a surface layer of the multilayer dielectric substrate, and the conductor pad is surrounded by a surface layer ground conductor partly or entirely around the area where the dielectric is exposed. The high frequency package according to claim 1, wherein the high frequency package is used. A high-frequency package according to any one of claims 1-10, wherein the high-frequency semiconductor receives a reception signal reflected from the transmitting circuit and the target is irradiated toward the frequency-modulated high-frequency signal to the target A high-frequency package including a receiving system circuit;
A waveguide terminal for inputting and outputting a transmission signal and a reception signal between the high-frequency semiconductor and a high-frequency package;
A control circuit that supplies a bias signal to a high-frequency semiconductor of a high-frequency package, transmits and receives a control signal to and from the high-frequency semiconductor, and modulates and controls a transmission wave output from the high-frequency semiconductor;
A transmission / reception module comprising: The transceiver module according to claim 11 ;
An antenna for transmitting and receiving a high-frequency signal input and output via the waveguide terminal of the transceiver module;
An electronic circuit for converting the output of the receiving system circuit of the high-frequency package into a low-frequency signal;
A signal processing board for calculating the distance to the target and the relative speed based on the low-frequency signal converted by the electronic circuit;
A wireless device comprising:

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