JP4582347B2 - Semiconductor device and manufacturing method thereof - Google Patents

Description

  The present invention relates to a semiconductor device and a manufacturing method thereof.

There is known a semiconductor device including an electrode pad and a resin layer formed on an active surface, and wiring disposed from the surface of the electrode pad to the surface of the resin layer (Patent Document 1). The resin layer and the wiring on the surface constitute an external terminal. The external terminals can be formed with a narrower pitch than the external terminals formed of solder balls, and stress can be absorbed by the resin layer. As shown in FIG. 7, the resin layer 900 is formed by forming a resin precursor layer and curing the resin precursor layer. In particular, the resin layer 900 is formed in a long shape so that a large number of wirings can be formed in one resin layer 900. When the precursor was formed, both ends 902 were raised when it was cured. When wiring is formed in such a raised end portion 902 and other portions, there is a problem that the height of the external terminals becomes non-uniform. In order to avoid this, only a portion having the same height must be used, and a part of the resin layer 900 was wasted.
JP-A-2005-353983

  An object of the present invention is to form a resin layer in which unevenness in height is eliminated and form wiring thereon.

(1) A method of manufacturing a semiconductor device according to the present invention includes:
Forming a thermosetting resin precursor layer on the surface of the semiconductor substrate on which the electrodes are formed;
A step of applying heat to the resin precursor layer to cure and forming a resin layer;
Forming a wiring electrically connected to the electrode on the resin layer;
Including
The resin precursor layer is formed to include a first surface facing the semiconductor substrate and a second surface opposite to the first surface,
The shape of the second surface can be divided into a rectangle inscribed in the second surface and a convex portion having a plurality of ends joined to the rectangle,
A pair of the end portions are joined to at least both ends of one side of the rectangle,
The convex portion protrudes from the side with a width narrower than the length of the side where the pair of end portions are joined. According to the present invention, the resin layer precursor layer has a convex portion that protrudes with a narrow width from one side of the rectangle, and the side surface of the convex portion is larger than the side surface that descends from one side of the rectangle. . Accordingly, since the surface area per unit volume is large when the resin precursor layer is heated, the amount of heat increases, so that temporary softening before curing further proceeds and the height can be lowered. Thereby, since the edge part of the resin layer which was conventionally high can be made low, the nonuniformity of the height can be eliminated as a whole.
(2) In this method of manufacturing a semiconductor device,
The rectangle may be a rectangle, and the end may be joined to a short side of the rectangle.
(3) In this method of manufacturing a semiconductor device,
The convex portion may form a branch.
(4) In this method of manufacturing a semiconductor device,
Forming the resin precursor layer to have a through hole;
The convex portion may be arranged around the through hole.
(5) A semiconductor device according to the present invention includes:
A semiconductor substrate having an electrode formed thereon and electrically connected to the integrated circuit;
A resin layer formed on the surface of the semiconductor substrate on which the electrodes are formed;
A wiring electrically connected to the electrode and formed on the resin layer;
Have
The resin layer includes a first surface facing the semiconductor substrate, and a second surface opposite to the first surface,
The shape of the second surface can be divided into a rectangle inscribed in the second surface and a convex portion having a plurality of ends joined to the rectangle,
A pair of the end portions are joined to at least both ends of one side of the rectangle,
The convex portion protrudes from the side with a width narrower than the length of the side where the pair of end portions are joined. According to the present invention, the resin layer is clearly divided into a portion where the top surface is rectangular and a portion where the top surface is a convex portion connected to the rectangle even if the height of the intermediate portion and the end portion are different. Therefore, the distinction is easy, and the entire portion having a rectangular upper surface can be used as a wiring support layer.
(6) In this semiconductor device,
The rectangle may be a rectangle, and the end may be joined to a short side of the rectangle.
(7) In this semiconductor device,
The convex portion may form a branch.
(8) In this semiconductor device,
The resin layer has a through hole,
The convex portion may be disposed around the through hole.

(First embodiment)
1A is a plan view showing a semiconductor device according to the first embodiment of the present invention, and FIG. 1B is a cross-sectional view of the semiconductor device taken along line IB-IB shown in FIG. It is an enlarged view which shows a part of. The semiconductor device has a semiconductor substrate 10. The semiconductor substrate 10 is a semiconductor chip in the semiconductor device as the final product shown in FIG. 1A, but is a semiconductor wafer in a stage before obtaining the final product. A semiconductor chip is obtained by cutting the semiconductor wafer. An integrated circuit 12 (one integrated circuit 12 for a semiconductor chip / a plurality of integrated circuits 12 for a semiconductor wafer) is formed on the semiconductor substrate 10. The semiconductor substrate 10 has an electrode 14 that is electrically connected to the integrated circuit 12 via internal wiring (not shown). In the example of FIG. 1A, the semiconductor substrate 10 has a shape that is long in one direction (planar shape is rectangular), and a plurality of electrodes 14 are arranged along the longer side. A passivation film 16 is formed on the semiconductor substrate 10 so that at least a part of the electrode 14 is exposed. The passivation film 16 may be formed of only an inorganic material such as SiO ₂ or SiN.

  FIG. 2 is an enlarged plan view of a part of the resin layer of the semiconductor device according to the first embodiment of the present invention. A resin layer 20 is formed on the surface of the semiconductor substrate 10 on which the electrode 14 is formed (on the passivation film 16). For example, the material of the resin layer 20 includes resins such as polyimide resin, silicone-modified polyimide resin, epoxy resin, silicone-modified epoxy resin, benzocyclobutene (BCB), polybenzoxazole (PBO), and phenolic resin. It may be used. The shape of the resin layer 20 includes a lower surface facing the semiconductor substrate 10 and an upper surface 22 opposite to the lower surface. The shape of the upper surface 22 can be divided into a rectangle 24 (for example, a rectangle) inscribed in the upper surface 22 and a convex portion 28 having a plurality of end portions 26 joined to the rectangle 24 (for example, a short side of the rectangle). The “rectangle 24 inscribed in the upper surface 22” refers to a rectangle obtained by enlarging from the center of the upper surface 22 until it touches the contour and having the maximum area. Further, the shape of the upper surface 22 refers to the shape of the resin layer 20 when the semiconductor substrate 10 and the resin layer 20 are shown in a plan view as shown in FIG. A pair of end portions 26 are joined to at least both ends (upper and lower ends in FIG. 2) of any one side of the rectangle 24 (the vertical sides at the left and right ends in FIG. 2). The convex portion 28 forms a branch. The convex portion 28 protrudes from the side with a width narrower than the length of the side where the pair of end portions 26 are joined (the vertical sides at the left and right ends of the rectangle 24 in FIG. 2).

  A wiring 30 is formed on the resin layer 20. The wiring 30 is electrically connected to the electrode 14 on the electrode 14. The wiring 30 and the electrode 14 may be in direct contact, or a conductive film (not shown) may be interposed therebetween. The wiring 30 extends from the electrode 14 onto the resin layer 20. The wiring 30 is in contact with the surface of the passivation film 16 between the electrode 14 and the resin layer 20. The wiring 30 may be formed so as to extend over the passivation film 16 beyond the end portion 26 of the resin layer 20 on the side opposite to the electrode 14.

  According to the present embodiment, even if the resin layer 20 has different heights at the intermediate portion (the portion corresponding to the rectangle 24) and the end portion (the portion corresponding to the convex portion 28), the upper surface 22 has the rectangular shape 24. And the portion where the upper surface 22 is the convex portion 28 connected to the rectangle 24 is clearly divided, so that the distinction is easy, and the entire portion corresponding to the rectangle 24 is supported by the wiring 30. Can be used as a layer.

  FIG. 3A is a plan view showing a resin precursor layer forming step according to the first embodiment of the present invention, and FIG. 3B is a diagram of the resin precursor layer shown in FIG. It is a IIIB-IIIB sectional view taken on the line.

  In the method for manufacturing a semiconductor device, a thermosetting resin precursor layer 40 made of, for example, a polyimide resin precursor is formed on the surface of the semiconductor substrate 10 on which the electrodes 14 are formed. The resin precursor layer 40 is formed so as to include a lower surface facing the semiconductor substrate 10, an upper surface 42 opposite to the lower surface, and a side surface 43 rising so as to be connected to the upper surface 42. The shape of the upper surface 42 can be divided into a rectangle 44 (for example, a rectangle) inscribed in the upper surface 42 and a convex portion 48 having a plurality of end portions 46 joined to the rectangle 44 (for example, a short side of the rectangle). A pair of end portions 46 are joined to at least both ends of one side of the rectangle 44. The convex portion 48 forms a branch. The convex portion 48 protrudes from the side with a width narrower than the length of one side of the rectangle 44 to which the pair of end portions 46 are joined.

  FIG. 4 is a view showing a resin layer formed from the resin precursor layer shown in FIG. The resin precursor layer 40 is cured by heat to form the resin layer 20. The resin precursor undergoes a chemical reaction (polymerization reaction / crosslinking reaction) by heat and is cured to become a resin. The resin precursor is temporarily softened by heat before curing. According to the present embodiment, the resin precursor layer 40 is formed with the convex portion 48 so as to protrude from one side (short side) of the rectangle 44 with a narrow width, and one side of the rectangle 44 as in the prior art. The side surface of the convex portion 48 is larger than the side surface descending from the (short side). Therefore, when the resin precursor layer 40 is heated, the amount of heat increases because the surface area per unit volume is large, so that temporary softening before curing further proceeds and the height can be lowered. Thereby, since the end part 26 of the resin layer 20 that has been conventionally high can be prevented from becoming high, unevenness in the height can be eliminated as a whole.

  Then, as shown in FIG. 1A, a wiring 30 is formed on the resin layer 20 so as to be electrically connected to the electrode 14. Since other details are a manufacturing method that is obvious from the structure of the semiconductor device described above, description thereof is omitted.

(Second Embodiment)
FIG. 5 is a plan view showing a semiconductor device according to the second embodiment of the present invention, and FIG. 6 is an enlarged view of a resin layer. In the present embodiment, the resin layer 60 has a through hole 62. The through hole 62 is formed at the end of the resin layer 60. The shape of the upper surface 72 of the resin layer 60 can be divided into a rectangle 74 inscribed in the upper surface 72 and a convex portion 78 having a plurality of end portions 76 joined to the rectangle 74. The rectangle 74 is in contact with the through hole 62. The convex part 78 is arranged around the through hole 62. Regarding the configuration, the details described in the first embodiment correspond to the other details. The effects described in the first embodiment can also be achieved in this embodiment.

  In the semiconductor device manufacturing method according to the present embodiment, the resin precursor layer is formed so as to correspond to the shape of the resin layer 60. Regarding the manufacturing method, the details described in the first embodiment correspond to the other details. The effects described in the first embodiment can also be achieved in this embodiment.

  The present invention is not limited to the above-described embodiments, and various modifications can be made. For example, the present invention includes configurations that are substantially the same as the configurations described in the embodiments (for example, configurations that have the same functions, methods, and results, or configurations that have the same purposes and results). In addition, the invention includes a configuration in which a non-essential part of the configuration described in the embodiment is replaced. In addition, the present invention includes a configuration that achieves the same effect as the configuration described in the embodiment or a configuration that can achieve the same object. Further, the invention includes a configuration in which a known technique is added to the configuration described in the embodiment.

FIG. 1A is a plan view showing a semiconductor device according to the first embodiment of the present invention, and FIG. 1B is a cross-sectional view of the semiconductor device taken along line IB-IB shown in FIG. It is an enlarged view which shows a part of. FIG. 2 is an enlarged plan view of a resin layer of the semiconductor device according to the first embodiment of the present invention. FIG. 3A is a plan view showing a resin precursor layer forming step according to the first embodiment of the present invention, and FIG. 3B is a diagram of the resin precursor layer shown in FIG. It is a IIIB-IIIB sectional view taken on the line. FIG. 4 is a view showing a resin layer formed from the resin precursor layer shown in FIG. FIG. 5 is a plan view showing a semiconductor device according to the second embodiment of the present invention. FIG. 6 is an enlarged view of the resin layer shown in FIG. FIG. 7 is a cross-sectional view showing a resin layer according to the prior art.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 ... Semiconductor substrate, 12 ... Integrated circuit, 14 ... Electrode, 16 ... Passivation film, 20 ... Resin layer, 22 ... Top surface, 24 ... Rectangular, 26 ... End part, 28 ... Convex part, 30 ... Wiring, 40 ... Resin precursor Body layer 42... Upper surface 44. Rectangle 46. End portion 48. Projection portion 60. Resin layer 62. Through hole 72. Upper surface 74. Rectangular shape 76 ... End portion 78 ... Projection portion

Claims (8)

Forming a thermosetting resin precursor layer on the surface of the semiconductor substrate on which the electrodes are formed;
A step of applying heat to the resin precursor layer to cure and forming a resin layer;
Forming a wiring electrically connected to the electrode on the resin layer;
Including
The resin precursor layer is formed to include a first surface facing the semiconductor substrate and a second surface opposite to the first surface,
The shape of the second surface can be divided into a rectangle inscribed in the second surface and a convex portion having a plurality of ends joined to the rectangle,
A pair of the end portions are joined to at least both ends of one side of the rectangle,
The method of manufacturing a semiconductor device, wherein the convex portion protrudes from the side with a width narrower than a length of the side to which the pair of end portions are joined. In the manufacturing method of the semiconductor device according to claim 1,
The method of manufacturing a semiconductor device, wherein the rectangle is a rectangle, and the end portion is bonded to a short side of the rectangle. In the manufacturing method of the semiconductor device according to claim 1 or 2,
The method of manufacturing a semiconductor device, wherein the convex portion forms a branch. In the manufacturing method of the semiconductor device according to claim 1 or 2,
Forming the resin precursor layer to have a through hole;
The manufacturing method of the semiconductor device which arrange | positions the said convex part around the said through-hole. A semiconductor substrate having an electrode formed thereon and electrically connected to the integrated circuit;
A resin layer formed on the surface of the semiconductor substrate on which the electrodes are formed;
A wiring electrically connected to the electrode and formed on the resin layer;
Have
The resin layer includes a first surface facing the semiconductor substrate, and a second surface opposite to the first surface,
The shape of the second surface can be divided into a rectangle inscribed in the second surface and a convex portion having a plurality of ends joined to the rectangle,
A pair of the end portions are joined to at least both ends of one side of the rectangle,
The convex portion is a semiconductor device that protrudes from the side with a width narrower than the length of the side to which the pair of end portions join. The semiconductor device according to claim 5,
The said rectangle is a rectangle, Comprising: The said edge part is joined to the short side of the said rectangle, The semiconductor device. The semiconductor device according to claim 5 or 6,
The convex portion is a semiconductor device formed by forming a branch. The semiconductor device according to claim 5 or 6,
The resin layer has a through hole,
The convex portion is a semiconductor device arranged around the through hole.

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