JP4576849B2 - Integrated circuit device - Google Patents

Description

The present invention relates to an integrated circuit equipment such as a surface acoustic wave electronic component elements used only like a filter for passing the electrical signal of a specific frequency.

  With the development of mobile communication technology, there is a demand for the electrical characteristics and reduction in size and weight of integrated circuit devices such as surface acoustic wave electronic component elements used as interstage filters and antenna filters for transmission and reception of various mobile communication devices. It has become increasingly severe.

  As conventional integrated circuit devices of this type, there are devices in which electronic component elements are housed in a hermetic case, but an expensive ceramic case is mainly used as a surface mounting case, which increases the manufacturing cost. There was a problem. The package structure that mounts the electronic component element on the case is designed to reduce the case wall thickness and reduce the thickness of the case in order to make the external size of the electronic component element close to the external size of the package. It is necessary to reduce the mounting clearance, and the downsizing further increases the case cost and the mounting cost, and downsizing has structural limitations. This problem is a common problem when packaging an integrated circuit device by mounting electronic component elements individually.

  In addition, a wire bonding method using Au and Al wires is generally used for mounting the electronic component element, and a loop using a wire that is electrically drawn from the electronic component element is required. The inductance component due to the loop shape cannot be ignored as the operating frequency of the electronic component element becomes higher. When the electronic component element characteristic is adjusted to a predetermined characteristic, the inductance component of the loop having a complicated shape is not obtained. It is essential to accurately grasp high-frequency characteristics and suppress variations in loop shape.

  Therefore, an integrated circuit device that solves such a problem is shown in FIG. FIG. 12 is a cross-sectional view showing a configuration of a conventional integrated circuit.

  First, an electronic component element electrode 2 is formed on a crystal substrate 1 to form an electronic component element. As an example of the electronic component element shown here, a surface acoustic wave electronic component element using a piezoelectric substrate such as lithium tantalate, lithium niobate, lithium borate, or quartz as the crystal substrate 1 and a comb-like electrode as the electronic component element electrode 2 is used. Can be mentioned. The electronic component element electrode 2 is electrically drawn to the end portion of the integrated circuit device by the lead electrode 3 and is drawn to the back surface of the crystal substrate 1 by the end face electrode 7 via the end portion of the crystal substrate 1. The external connection terminal 8 is connected. The external connection terminals 8 are terminals for mounting the integrated circuit device on the mother board, and generally use solder balls.

  Further, the cover 5 is fixed with an adhesive 4 while maintaining hermetic sealing at the end of the integrated circuit device. By providing the spacer 6 on the cover 5, the electronic component element formed by the comb-tooth electrode A space can be formed. This space is effective in stabilizing the characteristics when the electrical characteristics of the electronic component element changes due to physical contact with the outside, and in the case of the electronic component element using the surface acoustic wave described above. It is particularly effective.

  The integrated circuit device shown in FIG. 12 has a structure in which a plurality of electronic component elements are formed on a crystal substrate 1 of a wafer and a plurality of covers 5 formed of the wafer can be bonded together. An integrated circuit device can be manufactured in a batch by a process, and it has a feature of excellent mass productivity.

For example, Patent Document 1 is known as prior art document information related to the invention of this application.
Special table 2003-516634 gazette

  However, in the above-described conventional configuration, since the electronic component element electrode 2 is drawn out at the end of the integrated circuit device, electromagnetic shielding is insufficient, and the inductance component of the end face electrode 7 is not stable. As a result, it was a cause that hindered stabilization of characteristics.

  Also, when an IF filter of a mobile communication device is realized by a surface acoustic wave electronic component element, its input / output impedance is generally high, and an impedance matching circuit is required when connecting to an external circuit. . When the configuration according to the conventional example described above is used, it is difficult to form this matching circuit inside the package of the integrated circuit device, and as a result, it is necessary to provide the matching circuit outside, which hinders downsizing. Become.

  In the above conventional configuration, although an integrated circuit device is configured by a wafer process, an electronic component element formed by a wafer and a cover formed by a wafer are required to be positioned and bonded together. As the size is increased, the influence of the warp, undulation, and flatness of the cover and the crystal substrate 1 on the positioning and laminating properties increases, resulting in a decrease in yield, and there is a problem that there is a limit to cost reduction by the large format process. It was.

  SUMMARY OF THE INVENTION An object of the present invention is to provide an integrated circuit device having excellent characteristic stability and capable of forming an ultra-small and light-weight integrated circuit device by a large-size wafer process, and a manufacturing method thereof.

  In order to achieve the above object, the present invention has the following configuration.

According to a first aspect of the present invention, there is provided a crystal substrate, an electronic component element formed on the crystal substrate, a connection pad electrically drawn out from the electronic component element, and formed on the connection pad A conductive bump, a spacer formed on the crystal substrate in a region excluding the electronic component element and the connection pad, and a cover provided to form a space on the electronic component element with the spacer as a bridge, An insulating layer formed on the cover; a wiring layer including wiring; and an external connection terminal provided on the wiring layer, wherein the conductive bump penetrates the cover and is electrically connected to the wiring layer. and, the side surface of the wiring layer and the side surface of the crystal substrate is flush, an integrated circuit device shield is formed by metallic on the side surfaces of the wiring layer from the side face of the crystal substrate, the cover and the spacer Therefore, it is possible to form a space on the electronic component element, stabilize the characteristics of the electronic component element in which the electrical characteristics of the surface acoustic wave element or the like change due to physical contact with the outside, The simple connection structure by the characteristic bump improves the high frequency characteristic simulation accuracy, and as a result, the integrated circuit device design can be simplified.

  As described above, according to the present invention, by forming a space on the electronic component element by the cover and the spacer, the electrical characteristics of the surface acoustic wave electronic component element and the like can be protected from changes due to physical contact with the outside. In addition, the characteristics of the electronic component element can be stabilized, and the simple connection structure using the conductive bumps can improve the simulation accuracy of the high frequency characteristics, and as a result, the integrated circuit device design can be simplified.

In addition, by forming a shield pattern on at least one wiring layer of the wiring layer and forming a shield made of metal on the surface of the crystal substrate where the electronic component element is not formed, electromagnetic shielding can be further strengthened, The characteristics can be stabilized.

  Further, the configuration of the integrated circuit device of the present invention makes it possible to form electronic component elements such as L, C, and R in the wiring layer, and as a result, peripheral circuits such as matching circuits can be formed in the integrated circuit device. The circuit space can be reduced and downsizing can be realized.

  Further, the integrated circuit device can be manufactured collectively by a large-sized wafer process by the integrated circuit device manufacturing method of the present invention, and an inexpensive integrated circuit device can be provided by a manufacturing method having excellent productivity.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  In the present embodiment, the present invention will be described using a surface acoustic wave electronic component element as an electronic component element formed on a crystal substrate. However, the electronic component element is not limited to this, and the electronic component element In the case of mechanical vibration, the same effect can be obtained when a space is required around the electronic component element, such as when the electronic component element is deformed, such as a microlens array or an acceleration sensor.

(Embodiment 1)
FIG. 1 is a cross-sectional view showing a configuration of an integrated circuit device according to Embodiment 1 of the present invention. An electronic component element electrode 10 is formed on the crystal substrate 9 to constitute an electronic component element. As an example of the electronic component element shown here, a surface acoustic wave electronic component element using a piezoelectric substrate such as lithium tantalate, lithium niobate, lithium borate, and quartz as the crystal substrate 9 and a comb-like electrode as the electronic component element electrode 10 Is mentioned. When an easily corroded material such as Al is used as the electronic component element electrode 10, it is more preferable to form a protective layer such as SiO _{2 on} the surface of the element electrode 10.

  Further, a silicon substrate is used as the crystal substrate 9, and a piezoelectric thin film of aluminum nitride, zinc oxide, lithium niobate, lithium tantalate, or potassium niobate is formed on the surface of the silicon substrate by using a vacuum film formation method such as sputtering or CVD. The electronic component element electrode can be formed by forming the electronic component element electrode on the piezoelectric thin film. Since the piezoelectric thin film is formed on the silicon substrate as a large-sized wafer that can be obtained at low cost in this way, the number can be increased with a large work size, and as a result, the integrated circuit device can be provided at low cost. In addition, a thin piezoelectric body can be used for the electronic component element by the piezoelectric thin film, and various electronic component element structures such as a micromirror can be formed. Furthermore, the silicon substrate has excellent polishing properties and can be thinned to a thickness of about 50 μm, so that the integrated circuit device can be reduced in height.

  The element electrode 10 is electrically connected to the connection pad 11, and the conductive bump 12 is formed on the connection pad 11. The connection pad 11 may be made of the same material as that of the electronic component element electrode 10, or may be made of a different material in order to improve the connectivity with the conductive bump 12.

  As the conductive bump 12, a plating bump or a printed bump can be used, but it is more preferable to form a stud bump with a two-step protrusion by using a wire bonding method because a sharp bump can be easily formed. In FIG. 1, as an example, the conductive bump 12 is shown in the form of a stud bump having a two-step protrusion. The stud bump of the two-step protrusion forms a lower step portion of the two-step protrusion by thermocompression bonding of a ball formed at the wire tip to the connection pad 11, and further, the upper step of the two-step protrusion has a wire loop formed by moving the capillary. This is realized by a method of forming a part. When an Au stud bump is formed as the conductive bump 12, the adhesion of the conductive bump can be ensured by forming Au and Al on the surface of the connection pad. The size of the stud bump can be set by changing the thickness of the wire, and the bump height can be set by changing the bumping condition.

  A spacer 13 is formed on the crystal substrate 9 in a region other than the electronic component element, and a cover 14 is formed on the spacer 13. The cover 14 has a structure in which the conductive bumps 12 penetrate. The spacer 13 and the cover 14 are provided for the purpose of forming a space on the electronic component element, and the space on the electronic component element can be arbitrarily controlled according to the thickness of the spacer 13. This space is filled with an inert gas such as nitrogen for the purpose of stabilizing the characteristics. Here, it is important that the conductive bump 12 is formed higher than the total thickness of the spacer 13 and the cover 14.

  The material of the spacer 13 is not limited as long as a space can be formed on the electronic component element. The spacer 13 is more preferably a resin material imparted with photosensitivity mainly composed of an epoxy resin, a polyimide resin, a phenol resin, or the like in that a fine structure can be formed with high accuracy by photolithography.

  As the cover 14, the resin needs to be softened during the pressure bonding in order to penetrate the conductive bumps 12 by pressure bonding, and a thermosetting resin, a thermoplastic resin, or the like is used. In the case of using a thermosetting resin, it is preferable to use a solventless type, which can suppress the deterioration of the characteristics due to the solvent component adhering to the electronic component element when the thermosetting resin is cured. .

  A wiring layer 15 is formed on the cover 14, and the lead is electrically extracted from the conductive bump 12 by the wiring 16 and a shield is formed by the wiring 17. This shield is connected to the external connection terminal 20 connected to the ground line through the wiring layer 15. The wirings 16 and 17 formed in the wiring layer 15 are formed in a plurality of layers via an insulating layer 18 and are electrically connected to each other through vias 19. This makes it possible to form L, C, and R electronic component elements by wiring.

  The insulating layer 18 can be selected according to the characteristics of the built-in L, C, and R electronic component elements, and can be made of a low dielectric constant material such as PPE, PPO, Teflon (registered trademark), or particles such as strontium titanate. A high dielectric constant material dispersed in an epoxy resin can be used. The built-in passive component may be formed by printing a resistor, a high dielectric, or the like in addition to the one formed by the wiring pattern, and may incorporate a low-profile type passive component.

  External connection terminals 20 are formed outside the wiring layer 15. The external connection terminals 20 are terminals for mounting the integrated circuit device on a mother board, and generally use solder balls. Although not shown, a solder resist may be formed on the surface of the wiring layer 15 to cover other than the external connection terminals 20. As a result, when the integrated circuit device is mounted on the mother board, the solder spreads on the wiring on the surface and does not induce a mounting defect with the mother board.

  Further, when forming a peripheral circuit in the wiring layer 15, if the wiring layer 15 cannot fully accommodate components such as L, C, and R, or if it accommodates a circuit function, an active component such as a semiconductor electronic component element or a chip A component may be mounted on the surface of the wiring layer 15. In addition, it is more preferable to use an organic or inorganic material having excellent airtightness for the solder resist or the surface thereof in terms of enhancing the airtightness of the integrated circuit device.

  As described above, a space is formed on the electronic component element by the cover and the spacer, and the electrical extraction from the electronic component element is performed by the conductive bump 12, so that the electrical extraction portion of the electronic component element by the conductive bump 12 is electromagnetically shielded. Therefore, an integrated circuit device having stable characteristics can be provided.

  Next, a method for manufacturing the integrated circuit device according to the first embodiment of the present invention will be described with reference to the drawings. Note that portions overlapping with the examples already described will be described in a simplified manner.

  2 (a) to 2 (g) and FIGS. 3 (h) to 3 (m) are cross-sectional views showing a method of manufacturing an integrated circuit device according to the first embodiment of the present invention, and FIGS. 4 (a) to 4 (d) are drawings. Sectional drawing which shows the manufacturing method of another integrated circuit device in Embodiment 1 of invention, FIG.5 (a)-(c) is sectional drawing which shows the manufacturing method of another integrated circuit device in Embodiment 1 of this invention. It is.

  First, as shown in FIG. 2A, device electrodes 10 and connection pads 11 constituting an electronic component device are formed on a crystal substrate 9. The crystal substrate 9 is in a wafer state and has a configuration in which a plurality of electronic component elements are formed. 2 and 3 show only two electronic component element regions for simplification, but the number of electronic component elements is not limited to this, and a large number can be formed according to the wafer size and the electronic component element size. Needless to say.

  As described above, as the crystal substrate 9, a piezoelectric substrate such as lithium tantalate, lithium niobate, lithium borate, or quartz can be used. The crystal substrate 9 may be a silicon substrate, and a piezoelectric thin film of aluminum nitride, zinc oxide, lithium niobate, lithium tantalate, or potassium niobate may be formed on the surface of the silicon substrate by using a vacuum film formation method such as sputtering or CVD. good. Since a piezoelectric thin film is formed on a silicon substrate as a large-sized wafer that can be obtained at a low price in this way, the work size can be increased and the number can be increased. As a result, an integrated circuit device can be provided at a low cost. . In addition, a thin piezoelectric body can be used for the electronic component element by the piezoelectric thin film, and various electronic component element structures such as a micromirror can be formed. Furthermore, the silicon substrate has excellent polishing properties and can be thinned to a thickness of about 50 μm, so that the integrated circuit device can be reduced in height.

The electronic component element electrode 10 can be patterned by a photolithography process and an etching process after a metal is deposited by a vacuum film formation process such as sputtering. When forming a filter using surface acoustic waves as an electronic component element, a line width of, for example, about 0.5 μm to 1 μm is formed. When the electronic component element electrode 10 is mainly composed of a corrosive material such as Al, it is more preferable to form a protective layer such as SiO _{2 on} the surface of the electronic component element electrode 10.

  Next, as shown in FIG. 2B, the spacer 13 is formed in a region other than the electronic component element. In the example shown here, the electronic component element electrode 10 and the connection pad 11 are exposed from the spacer 13. The spacer 13 can be formed by patterning a resin mainly composed of an epoxy resin, a polyimide resin, a phenol resin or the like by screen printing and thermosetting, but a photosensitive epoxy resin or polyimide resin can be formed by photolithography. It is more preferable that the fine structure is formed with high accuracy. Here, the thermosetting resin to be the spacer 13 may be completely cured or may leave an uncured component. When the uncured component is left, the adhesion with the cover 14 can be improved when the cover 14 is attached later.

  Next, as shown in FIG. 2C, conductive bumps 12 are formed on the connection pads 11. It is more preferable to use a stud bump having a sharp two-step projection structure as the conductive bump 12. Since the detailed description regarding the stud bump forming method has already been described, it is omitted here.

  Then, as shown in FIG. 2D, the cover 14 is laminated. The cover 14 is made of a thermoplastic resin or a thermosetting resin, and a release film 21 is formed on one surface of the cover 14. When a thermosetting resin is used as the cover 14, a solventless type is more preferable as described above, and the thermosetting resin is not a completely cured material but a so-called B-stage state in which uncured components remain. Use. The release film 21 is preferably a material that can withstand the heat in the subsequent press-bonding process, and a surface of a heat-resistant film such as polyimide may be a silicone release treatment or a fluororesin film such as Teflon (registered trademark). it can.

  Next, as shown in FIG. 2 (e), the cover 14 is adhered to the spacer 13 by heating and pressing, and the conductive bumps 12 are passed through the cover 14. Regarding the adhesion between the spacer 13 and the cover 14, the material of the spacer 13 may be imparted with an adhesive property or may be imparted to the cover 14. As the heating and pressurizing conditions, it is necessary to soften the cover 14 to such an extent that the bumps penetrate. As an example, a B-stage high Tg epoxy resin sheet having a spacer thickness of 20 μm, a bump height of 80 μm and a cover of 40 μm thickness is used. When bonding was performed by applying a temperature of 200 ° C. and a pressure of 60 g per bump for 10 seconds, the conductive bumps 12 penetrated through the cover 14, and the bump film was crushed by the release film 21 and the bump chip The resin of the cover 14 existing between the release films was spread and the tips of the conductive bumps 12 could be exposed on the surface of the cover 14. The cover 14 is bonded in an inert gas atmosphere such as nitrogen, and the space closed by the crystal substrate 9, the spacer 13, and the cover 14 is filled with an inert gas in order to stabilize the characteristics. preferable.

  Next, as shown in FIG. 2 (f), the release film 21 on the surface is peeled off so that the tips of the conductive bumps 12 are exposed on the surface of the cover 14.

  Then, as shown in FIG. 2G, wirings 16 and 17 are formed on the surface of the cover 14. As a method for forming the wirings 16 and 17, a pattern can be formed by etching with a metal deposited on the entire surface by a vacuum film forming method such as sputtering. In addition, it is more preferable to use a plating method as a method for forming the wirings 16 and 17 in terms of providing a simpler manufacturing method. Electroless copper plating is performed by electroless copper plating and patterning is performed by etching. Method, semi-additive method can be used.

  The conductive bumps 12 exposed when the wirings 16 and 17 are formed and the wiring 16 are firmly connected metallically, and high connection reliability can be ensured. Here, the wiring 17 is a shield for electromagnetic shielding formed on the electronic component element, and is electrically connected to a ground line outside the integrated circuit device. The position where the shield is formed by the wiring 17 shown here is not limited to this, and it may be formed in any layer of the wiring layer 15. However, it is more preferable that the wiring 17 serving as a shield is provided in a layer of the wiring layer as close to the electronic component element as possible because electromagnetic radiation from the wiring 16 in the wiring layer 15 to the electronic component element can be shielded.

  Next, an insulating layer 18 is formed on the surface of the cover 14 as shown in FIG. As the insulating layer 18, generally, a resin material constituting a printed wiring board can be used, and a thermosetting epoxy resin can be used. In addition, when an L, C, R electronic component element is formed on the insulating layer 18 with a wiring pattern, a low dielectric constant material such as PPE, PPO, or Teflon (registered trademark) or particles such as strontium titanate are used as an epoxy resin As described above, a high-dielectric constant material dispersed in can be used.

  Next, as shown in FIG. 3 (i), a through hole 22 is formed in the insulating layer 18. At this time, the wiring 16 is exposed at the bottom of the through hole 22. Hole processing for the insulating layer 18 can be performed by photolithography using a photosensitive resin as the insulating layer 18, but laser processing using a carbon dioxide laser or YAG laser is the same regardless of the insulating layer material. It is more preferable at the point which can use a process.

  Next, as shown in FIG. 3 (j), a conductor is formed in the through hole 22 to form the via 19, and a wiring pattern 23 is formed on the surface of the insulating layer 18. The formation of the conductor and the wiring pattern 23 is a method with higher productivity by performing copper plating by a semi-additive method and simultaneously performing the via 19 and the wiring pattern 23. FIG. 3J shows a state in which the through hole 22 is completely filled with the conductor, but the configuration of the via 19 is not limited to this, and the conductor is formed only on the wall surface of the through hole 22. May be. Filling the through hole 22 completely with a conductor can realize a so-called via-on-via structure in which a via is further formed on the via 19 formed by the through hole 22, and the accuracy of circuit simulation is improved. This is advantageous in terms of increasing the density of the wiring layer 15.

  Then, as shown in FIG. 3K, the steps shown in FIGS. 3H to 3J are repeated to form the wiring layer 15 in multiple layers. As described above, the wiring layer 15 can form an L, C, R electronic component element by a wiring pattern together with an electrical lead-out of the electronic component element electrode 10 and incorporate a matching circuit or the like. Needless to say, the number of layers and the material structure of the wiring layer 15 differ depending on the wiring pattern incorporated therein.

  Next, as shown in FIG. 3L, external connection terminals 20 such as solder balls are formed on the surface of the wiring layer 15. Since the solder resist can be provided when the external connection terminal 20 is provided, it is omitted here.

  Then, as shown in FIG. 3 (m), when the electronic component elements are separated into pieces by dicing or the like, an integrated circuit device can be collectively formed by a wafer process.

  Further, the steps after FIG. 3 (l) will be described with reference to FIGS. 4 (a) to 4 (d). FIG. 4A is the same state as FIG.

  Next, as shown in FIG. 4B, the slit 24 is formed from the crystal substrate 9 side to the place where the wiring forming the shield of the wiring layer 15 is at least exposed. The slit 24 can be formed by dicing or the like. However, it is easy to form a shield later by processing the wall surface of the slit 24 to be inclined and widening the opening side of the slit 24. preferable.

  Then, as shown in FIG. 4C, a metal layer 25 is formed from the crystal substrate 9 side. The metal layer 25 can be formed by a vacuum film formation method, a plating method, or a combination thereof. Further, it is better to form the metal layer 25 with a thickness of 1 μm or more in order to improve the airtightness of the integrated circuit device.

  Next, as shown in FIG. 4D, when the electronic component elements are separated into pieces by dicing or the like, integrated circuit devices having excellent electromagnetic shielding properties and airtightness can be collectively formed by a wafer process. Moreover, it is preferable at the point which improves the electromagnetic shielding property of an integrated circuit device, and improves airtightness.

  Further, the steps after FIG. 3L will be described with reference to FIGS. 5A to 5C of another manufacturing method. FIG. 5A shows the same state as FIG. 3L, and a description thereof will be omitted.

  Next, as shown in FIG. 5B, a resin layer 29 is formed on the crystal substrate 9. As the material of the resin layer 29, a thermosetting epoxy resin or polyimide resin can be used. For the purpose of adjusting the elastic modulus and thermal expansion coefficient of the resin layer, inorganic fillers such as silica and alumina may be dispersed. More preferred. This makes it possible to adjust the substrate warpage that becomes noticeable when the thin crystal substrate 9 is used.

  Then, as shown in FIG. 5C, when the electronic component element is separated into pieces by dicing or the like, an integrated circuit excellent in drop impact resistance and bending impact resistance due to stress relaxation action and rigidity addition of the resin layer 29. An apparatus can be provided. Moreover, it is preferable at the point which improves the mechanical stress resistance of an integrated circuit device.

  4 and 5 show an example in which the metal layer 25 and the resin layer 29 are formed after the external connection terminal 20 is formed, the order in which the external connection terminal 20 is formed on the wiring layer 15 is shown here. It is not limited, and the same effect can be obtained even when the metal layer 25 and the resin layer 29 are formed.

  The configuration and the manufacturing method of the integrated circuit device shown in FIGS. 1, 2, 3, 4, and 5 are individually described for the parts that exhibit the characteristics as the integrated circuit device. It goes without saying that an integrated circuit device with higher reliability can be provided by combining the contents described in these configurations and manufacturing methods.

(Embodiment 2)
The second embodiment of the present invention will be described below with reference to the drawings. Note that portions overlapping with the example shown in the first embodiment will be described with the details omitted.

  FIG. 6 is a cross-sectional view showing the configuration of the integrated circuit device according to the second embodiment of the present invention, which is different from the first embodiment in that the connection pads 11 and the conductive bumps 12 are formed on the spacers 13. . With such a configuration, the outer shape of the integrated circuit device can be further reduced.

  Next, a method for manufacturing an integrated circuit device according to Embodiment 2 of the present invention will be described with reference to the drawings. Note that portions already described in the first embodiment will be described in a simplified manner.

  FIGS. 7A to 7G and FIGS. 8H to 8M are cross-sectional views illustrating a method of manufacturing an integrated circuit device according to the second embodiment of the present invention. As shown in FIG. 7A, element electrodes 10 and connection pads 11 constituting electronic component elements are formed on a crystal substrate 9, and a plurality of electronic component elements are formed on a wafer-like crystal substrate 9. The Then, as shown in FIG. 7B, conductive bumps 12 are formed on the connection pads 11.

  Next, as shown in FIG. 7C, the spacer 13 is formed. Here, the spacer 13 is also formed in a region where the connection pad 11 and the conductive bump 12 are provided. As the material of the spacer 13, it is preferable to use a liquid resin material, and it is more preferable to form a pattern by photolithography using a photosensitive material as in the example already described. In addition, in order to maintain the tip shape of the conductive bump 12 when the spacer 13 is formed, a liquid resin material is preferably applied by spray coating, electrostatic coating, or the like.

  Next, as shown in FIG. 7D, the cover 14 on which the release film 21 is formed is placed on the crystal substrate 9 on which the conductive bumps 12, the electronic component element electrodes 10, the connection pads 11 and the like are formed. Then, as shown in FIG. 7E, the cover 14 is adhered to the spacer 13 by heating and pressurizing, and the conductive bumps 12 are passed through the cover 14. Here, the tip of the conductive bump 12 is crushed by the release film 21 and exposed to the surface of the cover 14 as in the example described in the first embodiment.

  Then, as shown in FIG. 7 (f), the release film 21 is peeled off, and the conductive bumps 12 are exposed on the surface of the cover 14.

  Next, as shown in FIG. 7G, the wiring 16 is formed on the surface of the cover 14 and the wiring 16 and the conductive bumps 12 are electrically connected. Vias can be formed in the cover 14 by the conductive bumps 12 by a simple manufacturing method through the above steps.

  Next, as shown in FIG. 8 (h), the insulating layer 18 is formed on the surface of the cover 14, and as shown in FIG. 8 (i), the through hole 22 is formed by laser processing or the like. Then, as shown in FIG. 8J, a conductor is formed in the through hole 22, and a wiring pattern 23 is formed by plating or the like. Then, as shown in FIG. 8K, the wiring layer 15 in which the wiring is formed in a plurality of layers can be formed by repeating FIGS. 8H to 8J a predetermined number of times.

  Next, as shown in FIG. 8L, external connection terminals 20 are formed on the surface of the wiring layer 15, and as shown in FIG. 8M, a plurality of integrated circuit devices are divided by dicing or the like. A separated integrated circuit device can be manufactured.

  By forming the conductive bumps 12 on the spacers 13 by the above manufacturing method, the integrated circuit device can be further downsized. Further, by forming a space on the electronic component element by the cover 14 and the spacer 13, the electrical characteristics of the surface acoustic wave element and the like can be protected from changes due to physical contact with the outside, and the characteristics are stabilized. In addition, the simple connection structure by the conductive bumps 12 can improve the simulation accuracy of the high frequency characteristics, and as a result, the design of the integrated circuit device can be simplified.

(Embodiment 3)
Hereinafter, Embodiment 3 of the present invention will be described with reference to the drawings. In addition, the part which overlaps with the example shown in Embodiment 1, 2 is abbreviate | omitted and demonstrated.

  FIG. 9 is a sectional view showing a configuration of another integrated circuit device according to Embodiment 3 of the present invention. The first embodiment is different from the first embodiment in that the connection pad 11 and the conductive bump 12 are formed on the spacer 13. Further, a through hole 26 is provided in the cover 14, and a conductor is formed in the through hole 26 to form a via 27, and an electrical signal is drawn from the conductive bump 12. With this configuration, the external shape of the integrated circuit device can be reduced.

  Next, a method for manufacturing an integrated circuit device according to Embodiment 3 of the present invention will be described with reference to the drawings. Note that portions already described in Embodiment Mode 1 will be described in a simplified manner.

  10 (a) to 10 (g) and FIGS. 11 (h) to 11 (m) are cross-sectional views illustrating another method for manufacturing an integrated circuit device according to the third embodiment of the present invention. As shown in FIG. 10A, the device electrode 10 and the connection pad 11 constituting the electronic component device are formed on the crystal substrate 9, and further on the connection pad 11, as shown in FIG. Conductive bumps 12 are formed.

  Next, as shown in FIG. 10C, spacers 13 are formed on the entire surface of the crystal substrate 9. Here, a photosensitive resin material is used as the spacer 13, a release film 28 is laminated on the surface, the tip of the conductive bump 12 is crushed by heating and pressurization, and the tip of the conductive bump 12 is placed on the surface of the spacer 13. It is a simple method to expose.

  Next, as shown in FIG. 10D, the spacer 13 is patterned through an exposure and development process. Then, a cover 14 is formed on the surface of the spacer 13 as shown in FIG. As in the example already described, the release film may be removed by adhering to the spacer by heating and pressing in a state where the release film is formed on the surface of the cover 14.

  Here, a resin sheet made of polycarbonate, acrylic, polyimide or the like having a relatively high hardness may be used as the cover 14. When such a cover material is used, the conductive bump 12 is crushed with the cover material against the state in which the conductive bump 12 shown in FIG. 7C protrudes from the spacer 13, and the state shown in FIG. Can be formed.

  Next, as shown in FIG. 10 (f), a through hole 26 is formed by laser processing or the like at a location where the conductive bump 12 of the cover 14 is formed. The through hole 26 may be formed so that at least a part of the conductive bump 12 is exposed at the bottom of the hole.

  Next, as shown in FIG. 10G, a conductor is provided in the through hole 26 to form a via 27 and the wiring 16 is formed on the surface of the cover 14. Then, as shown in FIG. 11 (h), the insulating layer 18 is formed on the surface of the cover 14, and as shown in FIG. 11 (i), the through hole 22 is formed by laser processing or the like. Further, as shown in FIG. 11 (j), a conductor is formed in the through hole 22, and a wiring pattern 23 is formed by plating or the like.

  Then, as shown in FIG. 11 (k), the steps shown in FIGS. 11 (h) to (j) can be repeated a predetermined number of times to form a wiring layer 15 in which a plurality of wirings are formed.

  Then, as shown in FIG. 11 (l), when the external connection terminals 20 are formed on the surface of the wiring layer 15 and a plurality of integrated circuit devices are divided by dicing or the like, they are separated into pieces as shown in FIG. 11 (m). An integrated circuit device can be manufactured.

  By forming the conductive bumps 12 on the spacers 13 by the above manufacturing method, the integrated circuit device can be further downsized. Further, by forming a space on the electronic component element by the cover 14 and the spacer 13, the electrical characteristics of the surface acoustic wave element and the like can be protected from changes due to physical contact with the outside, and the characteristics are stabilized. In addition, the simple connection structure by the conductive bumps 12 can improve the simulation accuracy of the high frequency characteristics, and as a result, the design of the integrated circuit device can be simplified.

  The integrated circuit device according to the present invention can stabilize the characteristics by forming a space on the electronic component element by the cover and the spacer, and performing electromagnetic shielding on the electronic component element portion and the wiring lead-out portion. By making peripheral circuits such as matching circuits into the circuit, circuit space can be reduced and miniaturization can be realized, so that the electrical characteristics of surface acoustic wave electronic component elements etc. change due to physical contact with the outside. This is useful for an integrated circuit device provided with a component element.

Sectional drawing which shows the structure of the integrated circuit device in Embodiment 1 of this invention (A)-(g) Sectional drawing which shows the manufacturing method of the integrated circuit device in Embodiment 1 of this invention. (H)-(m) Sectional drawing which shows the manufacturing method of the integrated circuit device in Embodiment 1 of this invention. (A)-(d) Sectional drawing which shows the manufacturing method of another integrated circuit device in Embodiment 1 of this invention. (A)-(c) Sectional drawing which shows the manufacturing method of another integrated circuit device in Embodiment 1 of this invention. Sectional drawing which shows the structure of the integrated circuit device in Embodiment 2 of this invention (A)-(g) Sectional drawing which shows the manufacturing method of the integrated circuit device in Embodiment 2 of this invention. (H)-(m) Sectional drawing which shows the manufacturing method of the integrated circuit device in Embodiment 2 of this invention. Sectional drawing which shows the structure of another integrated circuit device in Embodiment 3 of this invention. (A)-(g) Sectional drawing which shows the manufacturing method of another integrated circuit device in Embodiment 3 of this invention. (H)-(m) Sectional drawing which shows the manufacturing method of another integrated circuit device in Embodiment 3 of this invention. Sectional drawing which shows the structure of the conventional integrated circuit device

DESCRIPTION OF SYMBOLS 1 Crystal substrate 2 Electronic component element electrode 3 Lead electrode 4 Adhesive 5 Cover 6 Spacer 7 End surface electrode 8 External connection terminal 9 Crystal substrate 10 Electronic component element electrode 11 Connection pad 12 Conductive bump 13 Spacer 14 Cover 15 Wiring layer 16 Wiring 17 Wiring 18 Insulating layer 19 Via 20 External connection terminal 21 Release film 22 Through hole 23 Wiring pattern 24 Slit 25 Metal layer 26 Through hole 27 Via 28 Release film 29 Resin layer

Claims (5)

A crystal substrate; an electronic component element formed on the crystal substrate; a connection pad electrically drawn from the electronic component element; a conductive bump formed on the connection pad; A formed spacer, a cover provided to form a space on the electronic component element using the spacer as a bridge, a wiring layer including an insulating layer and wiring formed on the cover, and a wiring layer on the wiring layer; The conductive bumps penetrate the cover and are electrically connected to the wiring layer , and the side surface of the crystal substrate and the side surface of the wiring layer are flush with each other, the crystal integrated circuit device shield is formed by metals from the side of the substrate on the side surface of the wiring layer. A crystal substrate; an electronic component element formed on the crystal substrate; a connection pad electrically drawn from the electronic component element; a conductive bump formed on the connection pad; A formed spacer, a cover provided to form a space on the electronic component element using the spacer as a bridge, a wiring layer including an insulating layer and wiring formed on the cover, and a wiring layer on the wiring layer; An external connection terminal provided on the wiring layer, wherein the connection pad and the conductive bump are provided in a region where the spacer is formed, and the conductive bump penetrates the spacer and vias a via provided in the cover. electrically connected to, the side surface of the wiring layer and the side surface of the crystal substrate is flush, collecting the shield is formed by metallic on the side surfaces of the wiring layer from the side face of the crystal substrate Circuit device. The integrated circuit device according to claim 1, wherein a shield pattern is formed on at least one wiring of the wiring layer. 3. The integrated circuit device according to claim 1, wherein a shield made of metal is formed on a surface of the crystal substrate on which the electronic component element is not formed. The integrated circuit device according to claim 1, wherein at least one of L, C, and R electronic component elements is formed by the wiring.

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