JP4542201B2 - Manufacturing method of coreless wiring board - Google Patents
Manufacturing method of coreless wiring board Download PDFInfo
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- JP4542201B2 JP4542201B2 JP2009281150A JP2009281150A JP4542201B2 JP 4542201 B2 JP4542201 B2 JP 4542201B2 JP 2009281150 A JP2009281150 A JP 2009281150A JP 2009281150 A JP2009281150 A JP 2009281150A JP 4542201 B2 JP4542201 B2 JP 4542201B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 239000002184 metal Substances 0.000 claims description 58
- 229910052751 metal Inorganic materials 0.000 claims description 58
- 229920005989 resin Polymers 0.000 claims description 57
- 239000011347 resin Substances 0.000 claims description 57
- 239000011888 foil Substances 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 41
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 29
- 230000003014 reinforcing effect Effects 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 21
- 238000007788 roughening Methods 0.000 claims description 15
- 230000003746 surface roughness Effects 0.000 claims description 15
- 230000002093 peripheral effect Effects 0.000 claims description 13
- 238000007747 plating Methods 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 9
- 239000011889 copper foil Substances 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 6
- 238000000926 separation method Methods 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 65
- 229910000679 solder Inorganic materials 0.000 description 20
- 239000010949 copper Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000003351 stiffener Substances 0.000 description 6
- 238000003475 lamination Methods 0.000 description 5
- 239000002861 polymer material Substances 0.000 description 5
- 230000002787 reinforcement Effects 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000012286 potassium permanganate Substances 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Manufacturing Of Printed Wiring (AREA)
Description
本発明は、コアレス配線基板の製造方法に関する。 The present invention relates to a method for manufacturing a coreless wiring board.
近年、電子機器における高機能化及び軽薄短小化の要求からICチップやLSI等の電子部品では高密度集積化が急速に進んでおり、これに伴い電子部品を搭載するパッケージ基板には、従来にも増して高密度配線化及び多端子化が求められている。最近では、このようなパッケージ基板として、コア基板を有さないコアレス配線基板が提案されている(特許文献1等)。コアレス配線基板は、樹脂材料(高分子材料)からなる誘電体層と導体層とが交互に形成された高密度配線化が可能なビルドアップ層を主体とし、コア基板を省略することで全体の配線長を短くして高周波用途に対応するものである。 In recent years, electronic components such as IC chips and LSIs have been rapidly integrated due to the demand for higher functionality and lighter, thinner and smaller electronic devices. Furthermore, higher density wiring and multi-terminals are required. Recently, as such a package substrate, a coreless wiring substrate having no core substrate has been proposed (Patent Document 1, etc.). The coreless wiring board mainly consists of a build-up layer that can be made into a high-density wiring in which dielectric layers and conductor layers made of resin materials (polymer materials) are alternately formed. The wiring length is shortened to support high frequency applications.
ところで、電子部品と配線基板とは、半田バンプと呼ばれる接合部を介してフリップチップ接続しており、その隙間(半田バンプの周り)には、半田バンプの熱疲労寿命を向上させるために、熱硬化性樹脂からなるアンダーフィル材が充填形成される。ここで、ボイド等を発生させずにアンダーフィル材を良好に充填形成するためには、配線基板の表面(ソルダーレジスト層の表面)におけるアンダーフィル材の流れ性が重要となる。そのため、従来から、デスミア処理(過マンガン酸カリウム等)において、ソルダーレジスト層の開口内の樹脂残渣を除去する際に、同時にソルダーレジスト層の表面を粗化させてアンダーフィル材の流れ性を向上させる試みがなされている。 By the way, the electronic component and the wiring board are flip-chip connected via joints called solder bumps, and in the gap (around the solder bumps), in order to improve the thermal fatigue life of the solder bumps, An underfill material made of a curable resin is filled and formed. Here, in order to satisfactorily fill and form the underfill material without generating voids or the like, the flowability of the underfill material on the surface of the wiring board (the surface of the solder resist layer) is important. Therefore, conventionally, when removing resin residue in the opening of the solder resist layer in desmear treatment (potassium permanganate, etc.), the surface of the solder resist layer is simultaneously roughened to improve the flowability of the underfill material. Attempts have been made.
しかしながら、デスミア処理によって、ソルダーレジスト層の表面粗度と開口底の樹脂残渣除去とを同時に制御(二元管理)することは大変煩雑である。また、デスミア処理では、樹脂残渣除去の効果と比べて、ソルダーレジスト層表面の粗化効果が十分に得られないことから、効率が悪いという問題がある。また、ソルダーレジスト層の材料によってデスミア処理の条件を変更しなければならないという問題もある。 However, it is very cumbersome to simultaneously control (two-way management) the surface roughness of the solder resist layer and the removal of the resin residue on the bottom of the opening by the desmear process. Further, in the desmear treatment, there is a problem that the efficiency of the solder resist layer surface is not sufficiently obtained compared with the effect of removing the resin residue, and thus the efficiency is poor. Another problem is that the desmear treatment conditions must be changed depending on the material of the solder resist layer.
本発明は、上記問題を鑑みて為されたものであり、基板表面の粗化が容易で、しかもアンダーフィル材の流れ性が良好な配線基板を得るのに好適なコアレス配線基板の製造方法を提供することを目的とする。 The present invention has been made in view of the above problems, and provides a method for manufacturing a coreless wiring board suitable for obtaining a wiring board in which the surface of the board is easily roughened and the flowability of the underfill material is good. The purpose is to provide.
上記課題を解決するため、本発明のコアレス配線基板の製造方法は、
コア基板を有さず、樹脂材料からなる誘電体層と導体層とが交互に積層されたコアレス配線基板の製造方法であって、
補強基板上に、表面に金属粗化処理が施された剥離可能な金属箔が配置されている金属箔付き補強基板を準備する工程と、
配線基板の一方の主面をなす第1誘電体層となるべき第1樹脂シートを、金属箔を覆い囲む形で形成する第1シート形成工程と、
第1樹脂シート上に金属パターン及び樹脂シートを交互に積層して、配線基板となるべき配線積層部を金属箔上に含む積層シート体を得る積層シート体形成工程と、
配線積層部とその周囲部との境界に沿って積層シート体を補強基板ごと切断して該周囲部を除去する周囲部切除工程と、
配線積層部と補強基板とを分離する分離工程と、
配線積層部に付着している金属箔を除去して、金属箔の粗化表面に対応する表面粗さに形成された第1誘電体層の粗化表面を露呈させる金属箔除去工程と、
をこの順に含むことを特徴とする。
この場合、金属箔付き補強基板を準備する工程において、金属粗化処理が施された金属箔が、半硬化状態の下地樹脂シートと密着するように配置することができる。
また、金属箔の粗化表面は、JIS−B−0601に規定する十点平均粗さ(Rz)で5μm以上15μm以下であるようにすることもできる。
また、金属箔除去工程の後に、第1誘電体層に開口を形成する工程と、開口の開口底の樹脂残渣を除去するデスミア工程と、を含み、金属箔の粗化表面における表面粗さに対応して、第1誘電体層の粗化表面における表面粗さがJIS−B−0601に規定する十点平均粗さ(Rz)で5μm以上15μm以下とされるようにすることもできる。
さらに、積層シート体の周囲部を除去して金属箔の外縁を露出させる工程を備えるようにすることもできる。
さらに、金属箔は、金属メッキを介して2枚の銅箔を密着させた金属箔密着体を構成しており、分離工程では、銅箔の一方と他方との界面にて剥離することにより、積層シート体における金属箔密着体上の領域である配線積層部を銅箔の一方が付着した状態で補強基板から分離する工程を備えるようにすることもできる。
In order to solve the above problems, the method of manufacturing the coreless wiring board of the present invention includes:
A method of manufacturing a coreless wiring board in which dielectric layers and conductor layers made of a resin material are alternately laminated without having a core board ,
A step of preparing a reinforcing substrate with a metal foil in which a peelable metal foil having a metal roughening treatment on its surface is arranged on the reinforcing substrate;
A first sheet forming step of forming a first resin sheet to be a first dielectric layer forming one main surface of the wiring board in a form surrounding the metal foil;
A laminated sheet body forming step of alternately laminating metal patterns and resin sheets on the first resin sheet to obtain a laminated sheet body including a wiring laminated portion to be a wiring board on the metal foil,
A peripheral part cutting step of cutting the laminated sheet body together with the reinforcing substrate along the boundary between the wiring laminated part and the peripheral part and removing the peripheral part,
A separation step of separating the wiring laminated portion and the reinforcing substrate;
Removing the metal foil adhering to the wiring laminated portion and exposing the roughened surface of the first dielectric layer formed to a surface roughness corresponding to the roughened surface of the metal foil;
Are included in this order.
In this case, in the step of preparing the reinforcing substrate with metal foil, the metal foil subjected to the metal roughening treatment can be arranged so as to be in close contact with the semi-cured base resin sheet.
Moreover, the roughened surface of metal foil can also be made into 5 micrometers or more and 15 micrometers or less by the 10-point average roughness (Rz) prescribed | regulated to JIS-B-0601.
In addition, after the metal foil removing step, the method includes a step of forming an opening in the first dielectric layer and a desmearing step of removing a resin residue at the bottom of the opening of the opening, and the surface roughness on the roughened surface of the metal foil Correspondingly, the surface roughness of the roughened surface of the first dielectric layer may be set to 5 μm or more and 15 μm or less in terms of the ten-point average roughness (Rz) defined in JIS-B-0601.
Furthermore, it is possible to provide a step of removing the peripheral portion of the laminated sheet body to expose the outer edge of the metal foil.
Furthermore, the metal foil constitutes a metal foil adhesion body in which two copper foils are adhered to each other through metal plating, and in the separation step, by peeling at the interface between one and the other of the copper foil, The wiring laminated part which is an area | region on the metal foil close_contact | adherence body in a lamination sheet body can also be made to provide the process of isolate | separating from a reinforcement board | substrate in the state in which one side of copper foil adhered.
これによると、コアレス配線基板の一方の主面をなす第1誘電体層となるべき第1樹脂シートを、表面に金属粗化処理が施された金属箔付き補強基板の金属箔上に形成することで(第1シート形成工程)、第1樹脂シートと金属箔との間でアンカーが形成され、金属箔除去工程において金属箔の除去により露呈する第1誘電体層の表面が粗化されたものとなる。従って、第1誘電体層の粗化表面を容易に得ることができ、ひいてはアンダーフィル材の流れ性の良好なコアレス配線基板を得ることができる。他にも、金属箔の表面が粗化されていることにより、第1樹脂シートや金属箔付き補強基板と金属箔との密着性がアンカー効果により向上し、積層シート体を良好に形成することができるという効果もある。 According to this, the 1st resin sheet which should become the 1st dielectric layer which makes one main surface of a coreless wiring board is formed on the metal foil of the reinforcement board with metal foil by which the metal roughening process was performed on the surface. As a result (first sheet forming step), an anchor was formed between the first resin sheet and the metal foil, and the surface of the first dielectric layer exposed by removing the metal foil in the metal foil removing step was roughened. It will be a thing. Therefore, the roughened surface of the first dielectric layer can be easily obtained, and as a result, a coreless wiring board with good underfill material flowability can be obtained. In addition, since the surface of the metal foil is roughened, the adhesion between the first resin sheet or the reinforcing substrate with metal foil and the metal foil is improved by the anchor effect, and the laminated sheet body is formed well. There is also an effect that can be done.
また、金属箔除去工程の後に、例えばレーザによって第1誘電体層に開口を形成する工程と、開口底の樹脂残渣を除去するデスミア工程とを行う場合に、当該デスミア工程において、第1誘電体層の表面粗化を目的とする必要がなくなり、開口底の樹脂残渣除去のみを目的とすれば良くなる。すなわち、第1誘電体層の表面粗度と開口底の樹脂残渣除去とを同時に制御する必要がなくなり、工程管理が容易となるのである。なお、この場合、第1誘電体層の表面粗度は、表面粗化された金属箔によってほぼ決定されることとなり、開口底の樹脂残渣除去を目的としたデスミア工程では、第1誘電体層の表面は多少粗化されるものの粗度がほとんど変化しない。
Further, after the metal foil removing step, for example , when performing a step of forming an opening in the first dielectric layer by a laser and a desmear step of removing the resin residue at the bottom of the opening, in the desmear step, the first dielectric There is no need for the purpose of surface roughening of the layer, and only the removal of the resin residue at the bottom of the opening is sufficient. That is, it is not necessary to control the surface roughness of the first dielectric layer and the removal of the resin residue at the bottom of the opening at the same time, and process management becomes easy. In this case, the surface roughness of the first dielectric layer is substantially determined by the surface-roughened metal foil . In the desmear process for removing the resin residue at the bottom of the opening, the first dielectric layer Although the surface of the film is somewhat roughened, the roughness is hardly changed.
<コアレス配線基板>
本発明に係るコアレス配線基板の実施形態を、図面を参照しながら説明する。図1は、コアレス配線基板1の断面構造を概略的に表す要部拡大図である。コアレス配線基板1は、誘電体層B1〜B5と導体層M1〜M4とが交互に積層された配線積層部Lを主体に構成されている。
<Coreless wiring board>
An embodiment of a coreless wiring board according to the present invention will be described with reference to the drawings. FIG. 1 is an enlarged view of a main part schematically showing a cross-sectional structure of the coreless wiring board 1. The coreless wiring substrate 1 is mainly composed of a wiring laminated portion L in which dielectric layers B1 to B5 and conductor layers M1 to M4 are alternately laminated.
導体層M1〜M4は、Cuメッキからなる配線22,24やパッド21,25により構成されている。また、パッド21,25の表面には、Ni−Auメッキが施されている。導体層M1〜M4同士は、ビア23によって層間接続がなされており、これによって、パッド21からパッド25への導通経路(信号用,電源用,グランド用)が形成されている。 The conductor layers M1 to M4 are composed of wirings 22 and 24 and pads 21 and 25 made of Cu plating. The surfaces of the pads 21 and 25 are Ni-Au plated. The conductor layers M1 to M4 are connected to each other by vias 23, whereby a conduction path (for signal, power supply, and ground) from the pad 21 to the pad 25 is formed.
誘電体層B1〜B5は、主にエポキシ樹脂等の高分子材料からなり、誘電率や絶縁耐圧を調整するシリカ粉末等の無機フィラーを適宜含んでいる。このうち、誘電体層B2〜B4は、ビルドアップ樹脂絶縁層,ビア層と呼ばれ、導体層M1〜M4間を絶縁するとともに、層間接続のためのビア23が貫通形成されている。他方、誘電体層B1,B5は、ソルダーレジスト層と呼ばれ、パッド21,25を露出させるための開口部11a,13aが形成されている。また、誘電体層B2〜B4は、配線積層部Lの内部に生じる応力を緩和するために、例えば誘電体層B1,B5の高分子材料11,13よりもヤング率の低い高分子材料12を用いることができる。 The dielectric layers B1 to B5 are mainly made of a polymer material such as an epoxy resin, and appropriately include an inorganic filler such as silica powder that adjusts the dielectric constant and withstand voltage. Among these, the dielectric layers B2 to B4 are called build-up resin insulation layers and via layers, insulate the conductor layers M1 to M4, and have vias 23 formed therethrough for interlayer connection. On the other hand, the dielectric layers B1 and B5 are called solder resist layers, and openings 11a and 13a for exposing the pads 21 and 25 are formed. The dielectric layers B2 to B4 are made of, for example, a polymer material 12 having a Young's modulus lower than that of the polymer materials 11 and 13 of the dielectric layers B1 and B5 in order to relieve stress generated in the wiring laminated portion L. Can be used.
第1誘電体層B1がなす主面MP1は、ICチップやLSI等の電子部品の搭載面とされ、パッド21には、電子部品をフリップチップ接続するためのからなる半田バンプ9(Sn/Pb等)が形成されている。他方、第5誘電体層B5がなす裏面MP2は、外部基板への接続面とされ、パッド25は、ボールグリッドアレイ(BGA)等によって外部基板へ接続するための裏面ランドとして利用される。 A main surface MP1 formed by the first dielectric layer B1 is a mounting surface for an electronic component such as an IC chip or LSI, and a solder bump 9 (Sn / Pb) for flip-chip connecting the electronic component to the pad 21. Etc.) are formed. On the other hand, the back surface MP2 formed by the fifth dielectric layer B5 is used as a connection surface to the external substrate, and the pad 25 is used as a back surface land for connection to the external substrate by a ball grid array (BGA) or the like.
以上の如く構成されるコアレス配線基板1は、図7に示すように、中央の半田バンプ9を取り囲む形で金属製の補強枠(スティフナー)STが主面MP1に接着される。スティフナ−STの内側は電子部品の搭載部CSとなり、電子部品が半田バンプ9にフリップチップ接続されて、電子部品と主面MP1の隙間(半田バンプ9の周り)にガラスフィラー入りエポキシ樹脂等からなるアンダーフィル材が充填形成されることで電子装置が構成される。 As shown in FIG. 7, in the coreless wiring substrate 1 configured as described above, a metal reinforcing frame (stiffener) ST is bonded to the main surface MP1 so as to surround the central solder bump 9. The inside of the stiffener ST is an electronic component mounting portion CS. The electronic component is flip-chip connected to the solder bump 9, and a gap between the electronic component and the main surface MP1 (around the solder bump 9) is made of epoxy resin containing glass filler. An electronic device is configured by filling and forming an underfill material.
なお、コアレス配線基板1の主面MP1をなす第1誘電体層(ソルダーレジスト層)B1の表面は、アンダーフィル材の流れ性を良好なものとすべく、十分な粗度を有したものとなっている。具体的には、表面粗さがJIS−B−0601に規定する算術平均粗さ(Ra)で0.5μm以上(好ましくは0.7μm以上)1.5μm以下(好ましくは1.1μm以下)程度とされる。または、表面粗さがJIS−B−0601に規定する十点平均粗さ(Rz)で5μm以上(好ましくは8μm以上)15μm以下(好ましくは11μm以下)程度とされる。かかる範囲を下回ると、アンダーフィル材の流れ性が不良となってボイド等を発生させるおそれがある。また、アンダーフィル材と第1誘電体層(ソルダーレジスト層)B1との密着性が悪くなる。他方、かかる範囲を上回ると、Ni/Auメッキ時にメッキダレ不良が発生する。また、アンダーフィル材の流れ性が過度となり、充填性が悪くなるおそれがある。 The surface of the first dielectric layer (solder resist layer) B1 that forms the main surface MP1 of the coreless wiring substrate 1 has sufficient roughness so that the flowability of the underfill material is good. It has become. Specifically, the arithmetic mean roughness (Ra) specified in JIS-B-0601 is 0.5 μm or more (preferably 0.7 μm or more) and 1.5 μm or less (preferably 1.1 μm or less). It is said. Alternatively, the ten-point average roughness (Rz) specified in JIS-B-0601 is about 5 μm or more (preferably 8 μm or more) and 15 μm or less (preferably 11 μm or less). Below this range, the flowability of the underfill material may be poor and voids may be generated. Further, the adhesion between the underfill material and the first dielectric layer (solder resist layer) B1 is deteriorated. On the other hand, if it exceeds this range, a plating sag defect occurs during Ni / Au plating. Further, the flowability of the underfill material becomes excessive, and the filling property may be deteriorated.
<コアレス配線基板の製造方法>
本発明に係るコアレス配線基板の製造方法の実施形態を、図面を参照しながら説明する。図2〜図6は、コアレス配線基板1の製造工程を表す工程図である。この製造方法は、簡略に説明すると、補強基板3上に積層シート体SS(配線積層部L)を周知のビルドアップ法によって形成し、その後、配線積層部Lを補強基板3から剥離することで製造を容易とするものである。また、補強基板3の両面に同時に配線積層部Lを形成できるので量産が容易である。以下、各工程について詳細な説明を行う。
<Manufacturing method of coreless wiring board>
An embodiment of a method for manufacturing a coreless wiring board according to the present invention will be described with reference to the drawings. 2 to 6 are process diagrams showing the manufacturing process of the coreless wiring board 1. This manufacturing method will be briefly described. By forming the laminated sheet body SS (wiring laminated portion L) on the reinforcing substrate 3 by a well-known build-up method, and then peeling the wiring laminated portion L from the reinforcing substrate 3. It is easy to manufacture. Moreover, since the wiring laminated portion L can be formed on both surfaces of the reinforcing substrate 3 at the same time, mass production is easy. Hereinafter, each step will be described in detail.
(1)工程1
下地シート形成工程では、図2に示すように、製造時の補強のための補強基板3上に下地樹脂シート31を形成する。補強基板3は、特には限定されないが、例えば耐熱性樹脂板(例えばビスマレイミド−トリアジン樹脂板)や繊維強化樹脂板(例えばガラス繊維強化エポキシ樹脂)等を用いることができる。また、下地樹脂シート31は、後述する他の樹脂シートS1〜S5と同様に、主にエポキシ樹脂等の高分子材料からなり、真空ラミネートによって補強基板3の主面に形成される。なお、図2では補強基板3の一方の主面のみを示しているが、本工程において下地樹脂シート31は補強基板3の両面に形成される。
(1) Step 1
In the base sheet forming step, as shown in FIG. 2, a base resin sheet 31 is formed on the reinforcing substrate 3 for reinforcement during manufacturing. Although the reinforcement board | substrate 3 is not specifically limited, For example, a heat resistant resin board (for example, bismaleimide-triazine resin board), a fiber reinforced resin board (for example, glass fiber reinforced epoxy resin), etc. can be used. In addition, the base resin sheet 31 is mainly made of a polymer material such as an epoxy resin, and is formed on the main surface of the reinforcing substrate 3 by vacuum lamination, like other resin sheets S1 to S5 described later. Although only one main surface of the reinforcing substrate 3 is shown in FIG. 2, the base resin sheet 31 is formed on both surfaces of the reinforcing substrate 3 in this step.
(2)工程2
密着金属箔配置工程では、図2に示すように、密着Cu箔4を下地樹脂シート31上に主面31aに包含される形で配置する。密着Cu箔4は、2枚のCu箔4a,4bが例えばCr薄メッキを介して密着したものであり、剥離可能なものである。また、密着Cu箔4は、Cu粗化処理によって表面が粗化されている。Cu粗化処理は、例えば無機酸と銅酸化剤を含む粗化剤等を用いて行うことができる。このような表面粗化された密着Cu箔4は、本工程の前に、密着Cu箔(粗化前)に対してCu粗化処理を施すことで得ることができる(金属粗化処理工程)。
(2) Step 2
In the adhesion metal foil arrangement step, as shown in FIG. 2, the adhesion Cu foil 4 is arranged on the base resin sheet 31 so as to be included in the main surface 31 a. The contact Cu foil 4 is one in which two Cu foils 4a and 4b are in close contact via, for example, Cr thin plating and can be peeled off. Further, the surface of the contact Cu foil 4 is roughened by Cu roughening treatment. The Cu roughening treatment can be performed using, for example, a roughening agent containing an inorganic acid and a copper oxidizing agent. Such surface roughened adhesion Cu foil 4 can be obtained by subjecting adhesion Cu foil (before roughening) to Cu roughening treatment before this step (metal roughening treatment step). .
なお、Cu粗化処理が施された密着Cu箔4の表面粗度は、後述するようにコアレス配線基板1の第1誘電体層(ソルダーレジスト層)B1の表面粗度を決定する重要なものであり、具体的には、JIS−B−0601に規定する十点平均粗さ(Rz)で5μm以上(好ましくは8μm以上)15μm以下(好ましくは11μm以下)程度とされる。かかる範囲を下回ると、第1誘電体層B1の表面粗度が不十分となり、アンダーフィル材の流れ性が不良となってボイド等を発生させるおそれがある。また、アンダーフィル材と第1誘電体層(ソルダーレジスト層)B1との密着性が悪くなる。他方、かかる範囲を上回ると、Ni/Auメッキ時にメッキダレ不良が発生する。また、アンダーフィル材の流れ性が過度となり、充填性が悪くなるおそれがある。 In addition, the surface roughness of the adhesion Cu foil 4 subjected to the Cu roughening treatment is important for determining the surface roughness of the first dielectric layer (solder resist layer) B1 of the coreless wiring substrate 1 as described later. Specifically, the ten-point average roughness (Rz) specified in JIS-B-0601 is about 5 μm or more (preferably 8 μm or more) and 15 μm or less (preferably 11 μm or less). Below this range, the surface roughness of the first dielectric layer B1 becomes insufficient, and the flowability of the underfill material becomes poor, which may cause voids and the like. Further, the adhesion between the underfill material and the first dielectric layer (solder resist layer) B1 is deteriorated. On the other hand, if it exceeds this range, a plating sag defect occurs during Ni / Au plating. Further, the flowability of the underfill material becomes excessive, and the filling property may be deteriorated.
また、密着Cu箔4は、下地樹脂シート31が半硬化の状態で配置することが好ましい。すなわち、表面粗化された密着Cu箔4が半硬化状態の下地樹脂シート31と密着することでアンカー効果を得ることができ、以後の工程で密着Cu箔4が下地樹脂シート31から剥がれることなく積層シート体SS(配線積層部L)を良好に得ることができる。 Moreover, it is preferable to arrange | position the contact | adherence Cu foil 4 in the state in which the base resin sheet 31 is semi-hardened. That is, the surface-roughened contact Cu foil 4 can be brought into close contact with the semi-cured base resin sheet 31 to obtain an anchor effect, and the contact Cu foil 4 is not peeled off from the base resin sheet 31 in the subsequent steps. The laminated sheet body SS (wiring laminated portion L) can be obtained satisfactorily.
(3)工程3
第1シート形成工程では、図2に示すように、密着Cu箔4を覆い囲む形で第1樹脂シートS1を形成して、第1樹脂シートS1と下地樹脂シート31の間に密着Cu箔4を封止する。ここで、第1樹脂シートS1は、コアレス配線基板1の主面MP1をなす第1誘電体層B1となるべき部分を密着Cu箔4上に含むものである。また、第1樹脂シートS1は、真空ラミネートにより形成される。このように、密着Cu箔4が第1樹脂シートS1と下地樹脂シート31の間に封止され、且つ、第1樹脂シートS1が表面粗化された密着Cu箔4に密着すること(アンカー効果)で、以後の工程で密着Cu箔4が第1樹脂シートS1及び下地樹脂シート31から剥がれることなく積層シート体SS(配線積層部L)を良好に得ることができる。
(3) Process 3
In the first sheet forming step, as shown in FIG. 2, the first resin sheet S <b> 1 is formed so as to surround the close contact Cu foil 4, and the close contact Cu foil 4 is formed between the first resin sheet S <b> 1 and the base resin sheet 31. Is sealed. Here, the first resin sheet S1 includes a portion to be the first dielectric layer B1 forming the main surface MP1 of the coreless wiring substrate 1 on the contact Cu foil 4. The first resin sheet S1 is formed by vacuum lamination. Thus, the adhesion Cu foil 4 is sealed between the first resin sheet S1 and the base resin sheet 31, and the first resin sheet S1 adheres closely to the adhesion Cu foil 4 whose surface is roughened (anchor effect). ), The laminated sheet body SS (wiring laminated portion L) can be satisfactorily obtained without the adhesion Cu foil 4 being peeled off from the first resin sheet S1 and the base resin sheet 31 in the subsequent steps.
(4)工程4
積層シート体形成工程では、図3に示すように、第1樹脂シートS1上に金属パターン(導体層M1〜M4)及び樹脂シートS2〜S5(誘電体層B2〜B5を含む)を交互に積層して積層シート体SSを得る。このような金属パターンと樹脂シートの積層は、周知のビルドアップ法により行うことができる(補強基板3の両面にビルドアップする)。これによって得られる積層シート体SSは、コアレス配線基板1となるべき配線積層部Lを密着Cu箔4上に含むものとなる。また、積層シート体SSの上面はコアレス配線基板1の裏面MP2に相当し、第5樹脂シートS5には開口13aが形成され、その内部にはパッド25が露出している。なお、配線積層部Lは、コアレス配線基板1となるブロックが複数個配列したものとして構成される。
(4) Step 4
In the laminated sheet body forming step, as shown in FIG. 3, metal patterns (conductor layers M1 to M4) and resin sheets S2 to S5 (including dielectric layers B2 to B5) are alternately laminated on the first resin sheet S1. Thus, a laminated sheet body SS is obtained. Such lamination of the metal pattern and the resin sheet can be performed by a known build-up method (build-up is performed on both surfaces of the reinforcing substrate 3). The laminated sheet SS obtained as a result includes the wiring laminated portion L to be the coreless wiring substrate 1 on the adhesive Cu foil 4. Further, the upper surface of the laminated sheet SS corresponds to the rear surface MP2 of the coreless wiring substrate 1, the opening 13a is formed in the fifth resin sheet S5, and the pad 25 is exposed inside. In addition, the wiring lamination | stacking part L is comprised as what arranged the block used as the coreless wiring board 1 in multiple numbers.
(5)工程5
周囲部切除工程では、図4に示すように、配線積層部Lとその周囲部Eとの境界Vに沿って積層シート体SSを補強基板3ごと切断して周囲部Eを除去する。境界Vは密着Cu箔4の外縁に沿って(若しくはそれよりも内側に)存在し、切断により周囲部Eが除去されると、第1樹脂シートS1に封止されていた密着Cu箔4の外縁(外縁側が切除された場合は新たな外縁)が現れる。すなわち、周囲部Eの除去により第1樹脂シートS1と下地樹脂シート31の密着部分が失われるので、配線積層部Lと補強基板3(及び下地樹脂シート31)とは、積層方向において密着Cu箔4のみを介して連接した状態となる。
(5) Process 5
In the peripheral part cutting step, as shown in FIG. 4, the multilayer sheet body SS is cut together with the reinforcing substrate 3 along the boundary V between the wiring laminated part L and the peripheral part E, and the peripheral part E is removed. The boundary V exists along the outer edge of the adhesive Cu foil 4 (or inside thereof), and when the peripheral portion E is removed by cutting, the boundary Cu foil 4 sealed by the first resin sheet S1 is removed. An outer edge (a new outer edge when the outer edge is removed) appears. That is, since the contact portion between the first resin sheet S1 and the base resin sheet 31 is lost by removing the peripheral portion E, the wiring laminated portion L and the reinforcing substrate 3 (and the base resin sheet 31) are in close contact with each other in the stacking direction. It will be in the state connected via 4 only.
(6)工程6
剥離工程では、図5に示すように、配線積層部Lと補強基板3とを密着Cu箔4の界面(Cu箔4aとCu箔4bの界面)にて剥離する。以上のような製造方法によれば、補強基板3への密着性が要求される積層シート体SSの形成工程(工程4)と、補強基板3からの剥離容易性が要求される配線積層部Lの剥離工程(工程6)とを、どちらも良好に行うことができるので、製造が容易である。
(6) Step 6
In the peeling process, as shown in FIG. 5, the wiring laminated portion L and the reinforcing substrate 3 are peeled off at the interface between the close contact Cu foil 4 (the interface between the Cu foil 4a and the Cu foil 4b). According to the manufacturing method as described above, the step (step 4) of forming the laminated sheet body SS that requires adhesion to the reinforcing substrate 3, and the wiring laminated portion L that requires ease of peeling from the reinforcing substrate 3. Since both of the peeling step (step 6) can be carried out satisfactorily, the production is easy.
(7)工程7
金属箔除去工程では、図6に示すように、配線積層部Lに付着しているCu箔4aを除去して第1誘電体層B1を露呈させる。Cu箔4aの除去は、例えば過酸化水素水−硫酸系のエッチング液を用いた化学エッチングにより行う。ここで、Cu箔4aの第1誘電体層B1と密着する面は上述のように粗化処理が施されているので、Cu箔4aの除去により現れる第1誘電体層B1の面(主面MP1)も十分な粗度を有するものとなる。具体的には、本工程後の第1誘電体層B1の表面粗さは、JIS−B−0601に規定する算術平均粗さ(Ra)で0.5μm以上(好ましくは0.7μm以上)1.5μm以下(好ましくは1.1μm以下)程度とされる。または、JIS−B−0601に規定する十点平均粗さ(Rz)で5μm以上(好ましくは8μm以上)15μm以下(好ましくは11μm以下)程度とされる。かかる範囲を下回ると、製造後のコアレス配線基板1の主面MP1におけるアンダーフィル材の流れ性が不良となってボイド等を発生させるおそれがある。また、アンダーフィル材と第1誘電体層(ソルダーレジスト層)B1との密着性が悪くなる。他方、かかる範囲を上回ると、Ni/Auメッキ時にメッキダレ不良が発生する。また、アンダーフィル材の流れ性が過度となり、充填性が悪くなるおそれがある。
(7) Step 7
In the metal foil removing step, as shown in FIG. 6, the Cu foil 4a adhering to the wiring laminated portion L is removed to expose the first dielectric layer B1. The removal of the Cu foil 4a is performed by chemical etching using, for example, a hydrogen peroxide-sulfuric acid based etching solution. Here, since the surface of the Cu foil 4a that is in close contact with the first dielectric layer B1 is subjected to the roughening treatment as described above, the surface (main surface) of the first dielectric layer B1 that appears when the Cu foil 4a is removed. MP1) also has sufficient roughness. Specifically, the surface roughness of the first dielectric layer B1 after this step is 0.5 μm or more (preferably 0.7 μm or more) in terms of arithmetic average roughness (Ra) specified in JIS-B-0601. .About.5 μm or less (preferably 1.1 μm or less). Alternatively, the ten-point average roughness (Rz) specified in JIS-B-0601 is about 5 μm or more (preferably 8 μm or more) and 15 μm or less (preferably 11 μm or less). If it falls below this range, the flowability of the underfill material on the main surface MP1 of the coreless wiring board 1 after manufacture may be poor, and voids may be generated. Further, the adhesion between the underfill material and the first dielectric layer (solder resist layer) B1 is deteriorated. On the other hand, if it exceeds this range, a plating sag defect occurs during Ni / Au plating. Further, the flowability of the underfill material becomes excessive, and the filling property may be deteriorated.
(8)工程8
レーザ開口工程では、図6に示すように、レーザによって第1誘電体層B1に開口11aを穿設する。開口11aは、第1誘電体層B1下に形成されたパッド21に当たる位置に穿設され、その底部にはパッド21が露出する。このようなレーザによる開口11aを穿設には、CO2レーザ,UVレーザやYAGレーザ等が用いられる。
(8) Step 8
In the laser opening step, as shown in FIG. 6, an opening 11a is formed in the first dielectric layer B1 by laser. The opening 11a is formed at a position corresponding to the pad 21 formed under the first dielectric layer B1, and the pad 21 is exposed at the bottom. A CO 2 laser, a UV laser, a YAG laser, or the like is used for forming the opening 11a using such a laser.
(9)工程9
デスミア工程では、開口11a底(パッド21表面)の樹脂残渣(スミア)を除去する。デスミア処理は、過マンガン酸カリウム等の薬液やO2プラズマにより行う。ここで、上述したように工程7(金属箔除去工程)のCu箔4a除去により現れる第1誘電体層B1の面(主面MP1)は十分な粗度を有するものであるため、本工程のデスミア処理では、第1誘電体層B1表面の粗化を目的とする必要がなく、パッド21表面のスミア除去のみを目的とすれば良い。すなわち、デスミア処理によって、第1誘電体層B1の表面粗度と開口11a内のスミア除去とを同時に制御する必要がなくなるため、工程管理が容易となるのである。なお、パッド21表面のスミア除去を目的としたデスミア処理では、第1誘電体層B1の表面は多少粗化されるものの、本工程の前後で第1誘電体層B1の表面粗度はほとんど変化しない。
(9) Step 9
In the desmear process, the resin residue (smear) on the bottom of the opening 11a (the surface of the pad 21) is removed. The desmear treatment is performed with a chemical solution such as potassium permanganate or O 2 plasma. Here, as described above, the surface (main surface MP1) of the first dielectric layer B1 that appears when the Cu foil 4a is removed in the step 7 (metal foil removing step) has sufficient roughness. In the desmear process, there is no need for the purpose of roughening the surface of the first dielectric layer B1, but only for the purpose of removing the smear on the surface of the pad 21. That is, it is not necessary to control the surface roughness of the first dielectric layer B1 and the removal of the smear in the opening 11a at the same time by the desmear process, thereby facilitating process management. In the desmear process for removing smear on the surface of the pad 21, the surface of the first dielectric layer B1 is somewhat roughened, but the surface roughness of the first dielectric layer B1 is almost changed before and after this step. do not do.
(10)後工程
デスミア工程(工程9)後には、パッド21,25の表面にNi−Auメッキが施される。そして、配線積層部Lは、コアレス配線基板1となるブロック毎に切り分けられ、パッド21には半田バンプ9(Sn/Pb等)が形成される。その後、スティフナ−STが主面MP1に接着され、電気的検査,外観検査等の所定の検査を経て、図7に示すコアレス配線基板100が完成する。
(10) Post-process After the desmear process (process 9), Ni-Au plating is performed on the surfaces of the pads 21 and 25. Then, the wiring laminated portion L is cut for each block to be the coreless wiring substrate 1, and solder bumps 9 (Sn / Pb or the like) are formed on the pads 21. Thereafter, the stiffener ST is bonded to the main surface MP1, and after undergoing predetermined inspection such as electrical inspection and appearance inspection, the coreless wiring substrate 100 shown in FIG. 7 is completed.
以上、本発明の実施形態について説明したが、本発明はこれらに限定されず、これらに具現された発明と同一性を失わない範囲内において適宜変更し得る。 As mentioned above, although embodiment of this invention was described, this invention is not limited to these, In the range which does not lose the identity with the invention embodied in these, it can change suitably.
1 コアレス配線基板
B1〜B5 誘電体層
M1〜M4 導体層
3 補強基板
4 密着金属箔
31 下地樹脂シート
S1 第1樹脂シート
S1〜S5 樹脂シート
SS 積層シート体
L 配線積層部
E 周囲部
ST スティフナ−
100 コアレス配線基板(スティフナ−付)
DESCRIPTION OF SYMBOLS 1 Coreless wiring board B1-B5 Dielectric layer M1-M4 Conductor layer 3 Reinforcement board 4 Adhesive metal foil 31 Base resin sheet S1 1st resin sheet S1-S5 Resin sheet SS Laminated sheet body L Wiring laminated part E Surrounding part ST Stiffener
100 Coreless wiring board (with stiffener)
Claims (6)
補強基板上に、表面に金属粗化処理が施された剥離可能な金属箔が配置されている金属箔付き補強基板を準備する工程と、
前記配線基板の一方の主面をなす第1誘電体層となるべき第1樹脂シートを、前記金属箔を覆い囲む形で形成する第1シート形成工程と、
前記第1樹脂シート上に金属パターン及び樹脂シートを交互に積層して、前記配線基板となるべき配線積層部を前記金属箔上に含む積層シート体を得る積層シート体形成工程と、
前記配線積層部とその周囲部との境界に沿って前記積層シート体を前記補強基板ごと切断して該周囲部を除去する周囲部切除工程と、
前記配線積層部と前記補強基板とを分離する分離工程と、
前記配線積層部に付着している前記金属箔を除去して、前記金属箔の粗化表面に対応する表面粗さに形成された前記第1誘電体層の粗化表面を露呈させる金属箔除去工程と、
をこの順に含むことを特徴とするコアレス配線基板の製造方法。 A method of manufacturing a coreless wiring board in which dielectric layers and conductor layers made of a resin material are alternately laminated without having a core board ,
A step of preparing a reinforcing substrate with a metal foil in which a peelable metal foil having a metal roughening treatment on its surface is arranged on the reinforcing substrate;
A first sheet forming step of forming a first resin sheet to be a first dielectric layer forming one main surface of the wiring board in a form surrounding the metal foil;
A laminated sheet body forming step of alternately laminating metal patterns and resin sheets on the first resin sheet to obtain a laminated sheet body including a wiring laminated portion to be the wiring board on the metal foil;
A peripheral part cutting step of cutting the laminated sheet body together with the reinforcing substrate along a boundary between the wiring laminated part and the peripheral part, and removing the peripheral part;
A separation step of separating the wiring laminated portion and the reinforcing substrate;
Metal foil removal that removes the metal foil adhering to the wiring laminate and exposes the roughened surface of the first dielectric layer formed to a surface roughness corresponding to the roughened surface of the metal foil Process,
In this order. A method for manufacturing a coreless wiring board.
前記金属箔付き補強基板を準備する工程において、金属粗化処理が施された前記金属箔が、半硬化状態の下地樹脂シートと密着するように配置されることを特徴とするコアレス配線基板の製造方法。 The method of manufacturing a coreless wiring board according to claim 1, further comprising:
In the step of preparing the metal foil reinforcing substrate, producing the metallic foil metal roughening treatment has been performed, the coreless wiring board being arranged so as to be in intimate contact with the ground resin sheet in a semi-cured state Method.
前記金属箔の粗化表面は、JIS−B−0601に規定する十点平均粗さ(Rz)で5μm以上15μm以下であることを特徴とするコアレス配線基板の製造方法。 The coreless wiring board manufacturing method according to claim 1, further comprising:
The method for producing a coreless wiring board, wherein the roughened surface of the metal foil has a 10-point average roughness (Rz) specified in JIS-B-0601 of 5 μm or more and 15 μm or less.
前記金属箔除去工程の後に、前記第1誘電体層に開口を形成する工程と、
前記開口の開口底の樹脂残渣を除去するデスミア工程と、
を含み、
前記金属箔の粗化表面における表面粗さに対応して、前記第1誘電体層の粗化表面における表面粗さがJIS−B−0601に規定する十点平均粗さ(Rz)で5μm以上15μm以下とされていることを特徴とするコアレス配線基板の製造方法。 The method of manufacturing a coreless wiring board according to claim 3, further comprising:
A step of forming an opening in the first dielectric layer after the metal foil removing step;
A desmear process for removing resin residue at the bottom of the opening;
Including
Corresponding to the surface roughness on the roughened surface of the metal foil, the surface roughness on the roughened surface of the first dielectric layer is 5 μm or more in terms of the 10-point average roughness (Rz) specified in JIS-B-0601. A method for manufacturing a coreless wiring board, wherein the coreless wiring board is 15 μm or less.
前記積層シート体の周囲部を除去して前記金属箔の外縁を露出させる工程を備えることを特徴とするコアレス配線基板の製造方法。 The coreless wiring board manufacturing method according to any one of claims 1 to 4, further comprising:
A method of manufacturing a coreless wiring board, comprising: removing a peripheral portion of the laminated sheet body to expose an outer edge of the metal foil.
前記金属箔は、金属メッキを介して2枚の銅箔を密着させた金属箔密着体を構成しており、前記分離工程では、前記銅箔の一方と他方との界面にて剥離することにより、前記積層シート体における前記金属箔密着体上の領域である前記配線積層部を前記銅箔の一方が付着した状態で前記補強基板から分離する工程を備えることを特徴とするコアレス配線基板の製造方法。 The coreless wiring board manufacturing method according to claim 5, further comprising:
The metal foil constitutes a metal foil adhesion body in which two copper foils are adhered to each other through metal plating, and in the separation step, the metal foil is peeled off at the interface between one and the other of the copper foil. , manufacture of coreless wiring board characterized in that it comprises the step of separating the wiring laminate portion is a region on the metal foil adhesion body in the laminated sheet from the reinforcing substrate while is attached state of the copper foil Method.
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JP5750400B2 (en) * | 2012-05-17 | 2015-07-22 | 新光電気工業株式会社 | Wiring board manufacturing method, wiring board manufacturing structure |
JP6119169B2 (en) * | 2012-10-04 | 2017-04-26 | 凸版印刷株式会社 | Manufacturing method of coreless wiring board |
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CN104538320B (en) * | 2014-12-31 | 2018-07-20 | 广州兴森快捷电路科技有限公司 | Centreless board fabrication method |
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CN116614964B (en) * | 2023-05-25 | 2024-02-02 | 深圳市祺利电子技术有限公司 | IC carrier plate and manufacturing method thereof |
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