JP4535267B2 - Electronic components - Google Patents

Description

  The present invention relates to an electronic component such as a resonator, a filter, or a duplexer used in a communication device such as a mobile phone or a wireless LAN.

  Due to the explosive spread of cellular phone wireless LAN and the like in recent years, small, inexpensive and high-performance electronic components are required. With these demands, material technology and manufacturing technology have also progressed, and electronic parts almost the same as conventional ones have been produced in smaller shapes.

  However, it can only be made smaller than in the past, and it does not meet the requirements for unnecessary signal transmission outside the band.

  In addition, dielectric filters using TEM mode resonance are mainly used as RF filters used in conventional mobile phones and wireless LANs. By the way, a filter using TEM mode resonance has a pass band having a frequency that is substantially an odd multiple of the frequency as well as one pass band set to a predetermined specification value. This becomes a problem because unnecessary radiation (mainly three times the frequency) generated by amplifier distortion is passed as it is.

  A resonator composed of a resonance line mainly composed of an inductance component and a load capacitance solves such a problem to some extent because an odd multiple of the resonance frequency is deviated from the original odd multiple. However, the problem of undesired signal transmission due to resonance other than TEM mode remains.

  Also, in the case of a band-pass filter using a plurality of resonators composed of a resonance line and a load capacitance, the coupling between the resonators tends to be too strong as the size is reduced. Many methods have been devised for reducing the temperature to a lower level, but new measures are required to promote further downsizing.

  On the other hand, in recent years, communication devices such as mobile phones and wireless LANs have been further reduced in size and weight, and dielectric filters and the like have also been reduced in size. In particular, a chip-type filter in which dielectrics and electrodes are alternately stacked can be particularly reduced in size, and is currently in practical use in many fields.

  However, conventional electronic components including resonators such as dielectric filters have the following problems.

 (1) If the material is made smaller by increasing the relative permittivity due to the advancement of material technology, not only the desired mode but also the undesired mode will be generated, so the problem due to the undesired mode remains as it is. .

 (2) Although the larger capacitor is formed by partially thinning the interlayer due to the progress of manufacturing technology and downsizing, it does not cause the low frequency of undesired mode, but it is cut off only by the size down of the whole This is equivalent to shortening the length of the waveguide, and causes a decrease in attenuation even around the passband frequency. Although the current electronic parts are miniaturized using both of these means, it has been difficult to obtain good attenuation characteristics from the vicinity of the passband frequency to several times that frequency.

(3) In a band-pass filter using a plurality of resonators with a load capacity mounted on the resonance line, as the size reduction is promoted, the coupling between the resonators becomes too stronger than desired, and this is reduced to the desired strength. It was difficult to make.
JP 2004-148610 A Japanese Patent Laid-Open No. 5-114531

  An object of the present invention is to provide an electronic component that exhibits a good pass characteristic in a pass band of a frequency used in a mobile phone, a wireless LAN, or the like, and has a good attenuation characteristic at other frequencies.

  In order to solve the above-described problems, an electronic component according to the present invention includes a capacitance component and an inductance component in a dielectric substrate. The dielectric substrate includes a first dielectric portion and a second dielectric portion, and the second dielectric portion has a higher relative dielectric constant than the first dielectric portion, The first dielectric portion is provided in layers. The capacitance component uses the second dielectric portion as a capacitive layer, and the inductance component is provided inside the dielectric substrate and is connected to the capacitance component to constitute a resonator.

  As described above, in the electronic component according to the present invention, the second dielectric part constituting the dielectric substrate has a higher relative dielectric constant than the first dielectric part, and the capacitance component is the second dielectric part. Since the body part is a capacitive layer, a dielectric with a high relative dielectric constant is partly placed so that a large load capacity can be easily obtained, and a pass band that occurs at an odd number of times the fundamental band is easy. Can be biased.

  In addition, the second dielectric portion having a high relative dielectric constant is provided in a layered form inside the first dielectric portion, that is, the portion having a high relative dielectric constant is limited to a part of the dielectric substrate. Therefore, the frequency of an undesired signal transmitted through the entire dielectric substrate as a waveguide does not decrease. For this reason, a good attenuation can be obtained outside the passband.

  In the case of a filter having a plurality of resonators, the second dielectric portion having a high relative dielectric constant that forms the load capacitance is made independent for each resonator. It is possible to weaken or adjust the electromagnetic coupling of the electronic component, to obtain an electronic component having an appropriate passband width, little undesired signal transmission, and good out-of-band attenuation, such as a filter. Can do.

  Therefore, electronic components such as resonators, filters, and duplexers that exhibit good pass characteristics in the pass band of frequencies used in mobile phones, wireless LANs, etc., and have good attenuation characteristics at other frequencies. Parts can be provided.

  The inductance component is provided inside the dielectric substrate and is connected to the capacitance component to constitute a resonator. As described above, since the resonance frequency is determined by the load capacity of the inductance component and the capacitance component, the resonance frequency of the higher-order mode that is generated at an approximately odd multiple of the fundamental frequency is normally deviated from an approximately odd multiple. And it is suppressed.

  Specifically, the resonator includes a conductor that generates an inductance component and a conductor that generates a capacitance component. The resonator is formed inside the dielectric substrate, and has a function of a band pass or band stop filter as a whole.

  There may be one resonator or a plurality of resonators. In the case of an electronic component such as a normal filter or a duplexer, there are a plurality of resonators.

  When a plurality of resonators are provided, it is preferable that the second dielectric portion having a high relative dielectric constant is separated and independent for each resonator. The coupling between the resonators can be adjusted, for example, by arranging a coupling conductor film inside the dielectric substrate.

  As a more specific aspect, at least one surface of the second dielectric portion is in contact with a dielectric layer having a relative dielectric constant lower than that of the second dielectric portion. It is preferable from the viewpoint of securing the characteristics. For the same reason, it is preferable that the second dielectric portion is disposed only in the capacitor electrode formation region.

  The electronic component according to the present invention can be manufactured by applying a well-known means as a manufacturing technology of this type of electronic component. A typical manufacturing method is diversion of a sheet lamination method applied in a ceramic capacitor or the like. In addition to the sheet lamination method, it can also be manufactured by applying a printing method.

  Furthermore, the first dielectric portion and the second dielectric portion constituting the dielectric substrate may be made of a ceramic dielectric material or an organic dielectric material. Such materials are already well known.

  In addition, what kind of pattern is selected as the conductor film for the capacitance component and the inductance component, and how to set the number or the number of stacked layers depends on the type of electronic component to be obtained and required characteristics, etc. It belongs to the design matter that should be selected corresponding to.

  As described above, according to the present invention, there is provided an electronic component that exhibits good pass characteristics in a pass band of a frequency used in a mobile phone, a wireless LAN, etc., and has good attenuation characteristics in other frequencies. be able to.

  Other features of the present invention and the operational effects thereof will be described in more detail by way of examples with reference to the accompanying drawings.

  FIG. 1 is an exploded perspective view showing an example of an electronic component according to the present invention, and FIG. 2 is an external perspective view of the electronic component shown in FIG. This electronic component is used as a band pass filter. First, referring to FIG. 1, on a dielectric layer 111 on which a ground conductor 31 is formed, a dielectric layer 112 having capacitor electrodes 211 and 212, inductor conductors 213 and 214, and a dielectric having capacitor electrodes 215 and 216. The body layer 113, the dielectric layer 114 having the capacitor electrodes 219 and 220, the dielectric layer 115 having the ground conductor 32, and the protective dielectric layer 116 are sequentially stacked.

  The conductive materials constituting the capacitor electrodes 211 and 212, the inductor conductors 213 and 214, the capacitor electrodes 215, 216, 219, 220, the ground conductors 31 and 32, and the like are not particularly limited as long as they are for general high-frequency use. Absent. For example, it can be composed of a metal material with high conductivity such as Ag, Au, Cu, or Ag—Pd, or a copper foil. In addition, the dielectric layers 111 to 116 can be used independently of ceramic dielectric materials, organic dielectric materials, or composite materials of both as long as they have excellent high frequency characteristics.

  Next, details of the dielectric layers 111 to 116 will be described for each layer. First, in the dielectric layer 111, both ends in the length direction of the ground conductor 31 formed on one surface thereof are led out to the side end surfaces of the dielectric layer 111. Both end edges in the width direction of the ground conductor 31 are inside the side end face of the dielectric layer 111. The dielectric layer 111 may have a low relative dielectric constant.

  Next, in the dielectric layer 112, the capacitor electrodes 211 and 212 formed on one surface thereof are formed close to one end side in the length direction of the dielectric layer 112, and one end edge is the length of the dielectric layer 112. It is led out to one end face in the vertical direction. The capacitor electrodes 211 and 212 are partially partitioned by a slit provided at the center, and the electrode area and the coupling strength between the resonators are adjusted by the depth or width of the slit. Similarly to the dielectric layer 111, the dielectric layer 112 may have a low relative dielectric constant.

  The dielectric layer 113 has a characteristic configuration different from that of the dielectric layers 111 and 112. That is, the dielectric layer 113 includes a first dielectric portion 41 and a second dielectric portion 42, and the second dielectric portion 42 is based on the relative dielectric constant ε 1 of the first dielectric portion 41. Further, it has a high relative dielectric constant ε2, and is provided in layers with the same thickness as that of the first dielectric portion 41 so as to be sandwiched inside the first dielectric portion 41. The ratio α (ε2 / ε1) between the relative dielectric constant ε1 of the first dielectric portion 41 and the relative dielectric constant ε2 of the second dielectric portion 42 is preferably 10 times or more. For example, when the relative dielectric constant ε1 = 6 of the first dielectric portion 41, the relative dielectric constant ε2 = 75 of the second dielectric portion 42 is obtained. The second dielectric portion 42 is in a position overlapping the capacitor electrodes 211 and 212 formed on one surface of the dielectric layer 112.

  Furthermore, inductor conductors 213 and 214 and capacitor electrodes 215 and 216 are formed on one surface of the dielectric layer 113. Most of the inductor conductors 213 and 214 are located on the first dielectric portion 41, are spaced apart from each other, and extend along the length direction of the dielectric layer 113. One end of each of the inductor conductors 213 and 214 is a capacitor. The electrodes 211 and 212 are led to the side end surface opposite to the side end surfaces from which the electrodes 211 and 212 are led.

  The capacitor electrodes 215 and 216 are formed on one surface of the dielectric layer 113 so as to be continuous with the other ends of the inductor conductors 213 and 214. More specifically, the capacitor electrodes 215 and 216 extend from the other end side of the inductor conductors 213 and 214 onto the second dielectric portion 42, and most of the electrode area of the capacitor electrodes 215 and 216 is the second dielectric portion 42. It is located above and faces the capacitor electrodes 211 and 212 provided on one surface of the dielectric layer 112 with the second dielectric portion 42 interposed therebetween.

  An input (output) lead conductor 217 is branched from the middle of the inductor conductor 213. An end portion of the input lead conductor 217 is led to one end face in the width direction of the dielectric layer 113. Similarly, an output (input) lead conductor 218 is branched from the middle of the inductor conductor 214. The end portion of the output lead conductor 218 is led to the other end surface in the width direction of the dielectric layer 113. The input / output strength is determined by the positions of the branch points of the input lead conductor 217 and the output lead conductor 218. Therefore, when the external input / output terminal of the filter is desired to be installed in the longitudinal direction of the filter, for example, the input lead conductor 217. Care must be taken with the design of the output lead conductor 218.

  Furthermore, capacitor electrodes 219 and 220 are formed on the surface of the dielectric layer 114 opposite to the surface adjacent to the dielectric layer 113 with a space therebetween. The capacitor electrode 219 is electrically connected to the capacitor electrode 216 through a via hole (conductor) 221 penetrating the dielectric layer 114, and faces the capacitor electrode 215 through the dielectric layer 114. The capacitor electrode 220 is electrically connected to the capacitor electrode 215 through a via hole (conductor) 222 that penetrates the dielectric layer 114, and faces the capacitor electrode 216 through the dielectric layer 114.

  The dielectric layer 114 is the same dielectric material as the first dielectric portion 41 of the dielectric layer 113 and the dielectric layers 111 and 112, and the second dielectric of the dielectric layer 113. It is made of a material having a relative dielectric constant lower than that of the body part 42.

  In the dielectric layer 115, a ground conductor 32 is formed on the surface opposite to the surface adjacent to the dielectric layer 114. Both ends of the ground conductor 32 in the length direction are led out to the side end surfaces of the dielectric layer 115. Both end edges in the width direction of the ground conductor 32 are inside the side end face of the dielectric layer 115. The dielectric layer 115 may have a low relative dielectric constant. The dielectric layer 115 is also a dielectric material similar to the first dielectric portion 41 of the dielectric layer 113 and the dielectric layers 111, 112, and 114, and is included in the second dielectric layer 113. The dielectric portion 42 is made of a material having a lower relative dielectric constant.

  The dielectric layer 116 serves as a protective layer, and is provided adjacent to the dielectric layer 115. The dielectric layer 116 is also a dielectric material similar to the first dielectric portion 41 included in the dielectric layer 113 and the dielectric layers 111, 112, 114, 115, The second dielectric portion 42 is made of a material having a relative dielectric constant lower than that of the second dielectric portion 42.

  Actually, the dielectric layers 111 to 116 are integrated in a stacked state, and are not separated and divided for each layer as shown in FIG. FIG. 1 is an exploded view of each layer for the explanation of the internal structure. This point clearly appears with reference to FIG. As shown in FIG. 2, the dielectric layers 111 to 116 are integrated and fused as the dielectric substrate 1. A ground terminal GND1 is provided on one end surface of the dielectric substrate 1 in the length direction, and a ground terminal GND2 is provided on the other end surface. One end of each of the ground conductor 31, the capacitor electrodes 211 and 212, and the ground conductor 32 in FIG. 1 is conductively connected to the ground terminal GND1. The other end of the ground conductor 31 in FIG. 1, one end of the inductor conductors 213 and 214, and the other end of the ground conductor 32 are conductively connected to the ground terminal GND2.

  Further, an input (output) terminal T1 is provided on one end face in the width direction of the dielectric substrate 1, and an output (input) terminal T2 is provided on the other end face. One end of the input lead conductor 217 in FIG. 1 is electrically and mechanically connected to the input terminal T1, and one end of the output lead conductor 218 in FIG. 1 is electrically and mechanically connected to the output terminal T2. Yes.

  FIG. 3 is an equivalent electric circuit diagram of the electronic component shown in FIGS. Referring to FIGS. 1 and 2 and FIG. 3 together, the capacitor component C1 of FIG. The capacitor component C2 is a capacitor component acquired between the capacitor electrode 212 and the capacitor electrode 216 facing each other with the second dielectric portion 42 interposed therebetween. The capacitor component C3 is a capacitance component acquired between the capacitor electrode 220 and the ground conductor 32 facing each other with the dielectric layer 115 interposed therebetween. The capacitor component C4 is a capacitance component acquired between the capacitor electrode 221 and the ground conductor 32 facing each other with the dielectric layer 115 interposed therebetween.

  Capacitance component C5 is a combination of capacitance components acquired with capacitor electrode 219 facing capacitor electrode 215 via dielectric layer 114, and capacitor electrode 220 facing capacitor electrode 216 via dielectric layer 114.

  The inductance components L1 and L2 are inductance components obtained by the inductor conductors 213 and 214. Inductance components L1 and L2 are connected to capacitance components C1 and C2 to form a resonator.

  As described above, in the electronic component according to the present invention, the second dielectric portion 42 constituting the dielectric substrate 1 has a higher relative dielectric constant than the first dielectric portion 41, and the capacitance components C1, C2 Since the second dielectric portion 42 having a high relative dielectric constant is used as a capacitor layer, a large load capacity can be easily obtained, and a pass band generated in an approximately odd multiple of the fundamental band can be easily biased. Can be made.

  Moreover, the second dielectric portion 42 having a high relative dielectric constant is provided in a layered form inside the first dielectric portion 41, that is, the portion having a high relative dielectric constant is a part of the dielectric substrate 1. Therefore, the frequency of an undesired signal transmitted through the entire dielectric substrate 1 as a waveguide does not decrease. This means that a good attenuation can be obtained outside the pass band in the band pass filter.

  Further, since the second dielectric portion 42 having a high relative dielectric constant that forms the load capacitance is made independent of the first dielectric portion 41, the electromagnetic coupling between the resonators can be achieved even when a large load capacitance is used. It is possible to obtain an electronic component, for example, a filter, having an appropriate pass band width, less undesired signal transmission, and good out-of-band attenuation.

  Therefore, electronic components such as resonators, filters, and duplexers that exhibit good pass characteristics in the pass band of frequencies used in mobile phones, wireless LANs, etc., and have good attenuation characteristics at other frequencies. Parts can be provided.

  The inductance components L1 and L2 are provided inside the dielectric substrate 1, and are connected to the capacitance components C1 and C2 to form a resonator. As described above, since the resonance frequency is determined by the resonance line mainly composed of the inductance components L1 and L2 and the load capacitance due to the capacitance components C1 and C2, normally, a high frequency that is generated at approximately an odd multiple of the fundamental frequency. The resonance frequency of the next mode is deviated from approximately an odd multiple and suppressed.

  In the case of a resonator, there is one resonator, and in the case of an electronic component such as a filter or a duplexer, there are a plurality of resonators.

  The electronic component described above can be easily manufactured by applying a conventionally known lamination process. For example, the sheet construction method is an example. In applying the sheet method, an electrode paste is printed by a screen printing method on a dielectric sheet formed to a predetermined thickness using a doctor blade method or the like so as to have a predetermined shape. Each sheet for body layers 111-116 is created. The sheet to be created at this time is preferably an aggregate sheet in which a large number of electronic component elements are arranged in a grid pattern from the viewpoint of mass production.

  In manufacturing the dielectric layer 113 in FIG. 1, a first dielectric green sheet corresponding to the first dielectric portion 41 is manufactured. Next, after passing through necessary steps such as a drying step, a slit is made in the first dielectric green sheet.

On the other hand, in a separate process, a second dielectric green sheet corresponding to the second dielectric portion 42 is manufactured, and the second dielectric portion 42 is converted from the second dielectric green sheet to the first The dielectric green sheet is cut to a width corresponding to the slit width. Next, the cut second dielectric portion is fitted into the slit of the first dielectric green sheet.
The aggregate sheets obtained as described above are laminated in the order shown in FIG. Next, it cut | disconnects for every single electronic component, and baked what was obtained by cut | disconnecting. After firing, an electrode paste is applied to the end portion by rubber transfer or the like to form input / output terminals and ground terminals, and then fired. Here, although it demonstrated in the sheet construction method, it cannot be overemphasized that it can manufacture also in a printing construction method.

  The dielectric used is not particularly limited as long as it is a general high-frequency dielectric (having a predetermined dielectric constant, a high Q value, and good temperature characteristics). However, it must be possible to sinter at the same temperature as the conductor material in order to co-fire with the electrode. The conductive material of the electrode paste for forming each conductor and electrode is not particularly limited as long as it is a general high-frequency material. For example, if a dielectric that can be fired at about 900 ° C. is used, a metal having high conductivity such as Ag, Au, Cu, or Ag—Pd can be used. The dielectric layer constituting the chip type filter is not limited to ceramic, but may be a high-frequency resin-based substrate. In this case, the conductor and the electrode are formed of copper foil or the like.

  FIG. 4 is an exploded perspective view showing another embodiment of the electronic component according to the present invention. In the figure, parts corresponding to those shown in FIG. 1 are given the same reference numerals. The feature of this embodiment is that, in the dielectric layer 113, two second dielectric portions 421 and 422 are arranged in the first dielectric portion 41 so as to be embedded separately from each other. is there. The capacitor electrode 211 and the capacitor electrode 215 are opposed to each other with the second dielectric portion 421 interposed therebetween, thereby generating a capacitance component C1 (see FIG. 3). The capacitor electrode 212 and the capacitor electrode 216 are opposed to each other with the second dielectric portion 422 interposed therebetween, thereby generating a capacitance component C2 (see FIG. 3).

  In the structure of the illustrated embodiment, since the second dielectric portions 421 and 422 having a high dielectric constant are separated and independent from each other, the volume per portion of the portion having a high dielectric constant is the embodiment shown in FIG. Less than half. For this reason, it is possible to suppress an undesired decrease in the frequency of the higher-order mode and further improve the filter characteristics. In addition, since the second dielectric portions 421 and 422 having a high dielectric constant are separated and independent from each other, the capacitance components C1 and C2 generated between the capacitor electrodes 215 and 216 and the capacitor electrodes 211 and 212 are also separated. It becomes independent and it becomes possible to adjust the coupling between resonators weakly.

  5 is an exploded perspective view showing still another embodiment of the electronic component according to the present invention, FIG. 6 is an external perspective view of the electronic component shown in FIG. 5, and FIG. 7 is a cross section taken along line 7-7 in FIG. 8 is a cross-sectional view taken along line 8-8 in FIG. 6, and FIG. 9 is an electrical equivalent circuit diagram of the electronic component shown in FIGS. In the figure, parts corresponding to those shown in FIG. 1 are given the same reference numerals.

  First, referring to FIG. 5, a dielectric layer 112 having inductor conductors 231 and 232, a dielectric layer 113 having a coupling conductor 233, a capacitor electrode 234, a dielectric layer 111 on which a ground conductor 31 is formed, A dielectric layer 114 having 235, a dielectric layer 115 having capacitor electrodes 236 and 237, a dielectric layer 116 having a ground conductor 32, and a protective dielectric layer 117 are sequentially stacked.

  Next, details of the dielectric layers 111 to 116 will be described for each layer. First, in the dielectric layer 111, both ends in the width direction of the ground conductor 31 formed on one surface thereof are led out to the side end surfaces of the dielectric layer 111. Both end edges in the length direction of the ground conductor 31 are inside the side end face of the dielectric layer 111. The dielectric layer 111 may have a low relative dielectric constant.

  Next, in the dielectric layer 112, inductor conductors 231 and 232 are formed on one surface of the dielectric layer 112 so as to be spaced apart from each other, and one end edges of the conductors are led to one end surface in the width direction of the dielectric layer 112. . As with the dielectric layer 111, the dielectric layer 112 also has a low relative dielectric constant.

  In the dielectric layer 113, a coupling conductor 233 for adjusting the coupling degree of the capacitor electrode is brought to one end side in the width direction of the dielectric layer 113 on the surface opposite to the surface adjacent to the dielectric layer 112. It is formed to extend in the length direction. Similarly to the dielectric layers 111 and 112, the dielectric layer 113 has a low relative dielectric constant.

  In the dielectric layer 114, capacitor electrodes 234 and 235 are provided on the surface opposite to the surface adjacent to the dielectric layer 113 at intervals in the length direction. One end of the capacitor electrode 234 is led to one end face in the length direction of the dielectric layer 114 and folded, and one end of the capacitor electrode 235 is a side end face opposite to the side end face from which one end of the capacitor electrode 234 is led. Has been derived. The capacitor electrodes 234 and 235 face the coupling conductor 233 with the dielectric layer 114 interposed therebetween. Therefore, the coupling between the capacitor electrodes 234 and 235 is adjusted by adjusting the overlapping area, distance, and the like of the coupling conductor 233 with respect to the capacitor electrodes 234 and 235. Similarly to the dielectric layers 111 to 113, the dielectric layer 114 has a low relative dielectric constant.

  In the dielectric layer 115, capacitor electrodes 236 and 237 are provided on the surface opposite to the surface adjacent to the dielectric layer 114 at intervals in the length direction. The capacitor electrode 236 overlaps the capacitor electrode 234 with the dielectric layer 115 interposed therebetween, and the capacitor electrode 237 overlaps the capacitor electrode 235 with the dielectric layer 115 interposed therebetween. Further, the capacitor electrode 236 is conductively connected to one end of the inductor conductor 231 by a via hole (conductor) 238 penetrating the dielectric layers 115, 114, 113, and the capacitor electrode 237 is connected to the dielectric layers 115, 114, 113. The via hole 239 that penetrates is electrically connected to one end of the inductor conductor 232. Similarly to the dielectric layers 111 to 114, the dielectric layer 115 has a low relative dielectric constant.

  In the dielectric layer 116, the ground conductor 32 is formed on the surface opposite to the surface adjacent to the dielectric layer 115. Both ends of the ground conductor 32 in the width direction are led out to the side end surfaces of the dielectric layer 116. Both end edges in the length direction of the ground conductor 32 are inside the side end face of the dielectric layer 116.

  The dielectric layer 116 has a characteristic configuration different from that of the dielectric layers 111 to 115. That is, the dielectric layer 116 includes a first dielectric portion 41 and second dielectric portions 421 and 422. The second dielectric portions 421 and 422 have a relative dielectric constant ε2 that is higher than the relative dielectric constant ε1 of the first dielectric portion 41, and the first dielectric portion 41 is provided inside the first dielectric portion 41. The same thickness as 41 is provided in layers. The technical significance of including the first dielectric portion 41 and the second dielectric portions 421 and 422 is as described above.

  The second dielectric portions 421 and 422 are arranged separately from each other with an interval in the length direction of the dielectric layer 116. The technical significance of this has already been described. Capacitor electrodes 236 and 237 provided on one surface of the dielectric layer 115 overlap with the ground conductor 32 formed on one surface of the dielectric layer 116 in common.

  The dielectric layer 117 serves as a protective layer, and is provided adjacent to the dielectric layer 116. The dielectric layer 117 is also a dielectric material similar to the first dielectric portion 41 and the dielectric layers 111 to 115 included in the dielectric layer 116, and the second dielectric included in the dielectric layer 116. It is made of a material having a relative dielectric constant lower than that of the body parts 421 and 422.

  As is clear from FIG. 6 to FIG. 8, the dielectric layers 111 to 117 are integrated and integrated as the dielectric substrate 1. A ground terminal GND1 is provided on one end face of the dielectric substrate 1 in the width direction, and a ground terminal GND2 is provided on the other end face. One end of each of the ground conductor 31, the inductor conductors 231 and 232, and the ground conductor 32 is conductively connected to the ground terminals GND 1 and GND 2.

  Further, an input (output) terminal T1 is provided on one end face in the length direction of the dielectric substrate 1, and an output (input) terminal T2 is provided on the other end face. One end of a capacitor electrode 234 is electrically and mechanically connected to the input terminal T1, and one end of a capacitor electrode 235 is electrically and mechanically connected to the output terminal T2.

  FIG. 9 is an equivalent electric circuit diagram of the electronic component shown in FIGS. Referring to FIGS. 5 to 8 and FIG. 9 together, the capacitor component C1 in FIG. 9 is formed between the ground electrode 32 and the capacitor electrode 236 facing each other with the second dielectric portion 421 interposed therebetween. The capacitor component C2 is a capacitor component acquired between the ground electrode 32 and the capacitor electrode 237 facing each other with the second dielectric portion 422 interposed therebetween.

  The capacitor component C3 is a capacitance component acquired between the capacitor electrode 236 and the capacitor electrode 234 facing each other with the dielectric layer 115 interposed therebetween, and the capacitor component C4 has the dielectric layer 115 interposed therebetween. It is a capacitance component acquired between the capacitor electrode 237 and the capacitor electrode 235 facing each other.

  The capacitance component C5 is a combination of two capacitance components acquired between the capacitor electrode 234 and the coupling conductor 233 and between the coupling conductor 233 and the capacitor electrode 235 with the dielectric layer 114 interposed therebetween.

  The inductance components L1 and L2 are inductance components obtained by the inductor conductors 231 and 232. The inductance component L1 is connected to the capacitance component C1 to constitute one resonator, and the inductance component L2 is connected to the capacitance component C2 to constitute another resonator.

  However, the present invention is not only applied to the filters shown in FIGS. 1 to 9 but can be widely applied to filters, resonators, duplexers, and the like having other configurations.

  Next, specific examples will be described.

(Example 1)
As a sample of Example 1, a chip type filter having the configuration shown in FIGS. 1 to 3 was produced by a sheet method. The shape of the obtained chip-type multilayer filter is 2.0 mm × 1.2 mm × 1.0 mm. The dielectric layers 111, 112, 114, 115, 116, and the first dielectric portion 41 of the dielectric layer 113 were made of a ceramic dielectric material having a dielectric constant ε1 of 6. A ceramic dielectric material having a relative dielectric constant ε2 of 75 was used for the second dielectric portion 42 of the dielectric layer 113.

  FIG. 10 shows the electrical characteristics of this example. In the figure, the X axis indicates the frequency (GHz) and the Y axis indicates the attenuation (dB). A curve S11 indicates reflection characteristics, and a curve S21 indicates transmission characteristics.

  A dielectric material having a dielectric constant ε1 was mainly composed of alumina, barium, and silica, and a dielectric material having a dielectric constant ε2 was mainly composed of barium, neodymium, and titanium.

  Ag was used as the conductive material for forming the via hole, each conductor, and the electrode. Each of the green sheets forming the transmission line has a thickness of 40 μm.

(Example 2)
As a sample of Example 2, a chip type filter having the configuration shown in FIG. 4 was produced by a sheet method. The shape of the obtained chip-type multilayer filter was 2.0 mm × 1.2 mm × 1.0 mm, as in Example 1. The dielectric layers 111, 112, 114, 115, 116, and the first dielectric portion 41 of the dielectric layer 113 were made of a ceramic dielectric material having a dielectric constant ε1 of 6. For the second dielectric portions 421 and 422 of the dielectric layer 113, a ceramic dielectric material having a relative dielectric constant ε2 = 75 was used.

  FIG. 11 shows the electrical characteristics of Example 2. The method of taking the graph axes and the meanings of the curves S11 and S21 are the same as in the case of FIG.

(Comparative example)
FIG. 12 is an exploded perspective view of a chip type filter provided as a comparative example. This chip type filter basically has the same basic structure as that shown in FIGS. 1 to 4, except that the entire dielectric layer 113 is made of a high dielectric constant ceramic dielectric having a relative dielectric constant ε = 75. It differs in that it is configured according to body materials.

  FIG. 13 is a graph showing the electrical characteristics of the comparative example. The method of taking the graph axes and the meanings of the curves S11 and S21 are the same as in the case of FIG.

(Characteristic comparison and examination)
First, referring to FIG. 13 showing the characteristics of the comparative example, a pass band due to higher order resonance of the main mode (TEM) and a pass band due to other modes are formed at a frequency higher than about three times the main pass band. Is done.

  On the other hand, as is clear when the graph of FIG. 10 showing the characteristics of Example 1 is compared with the graph of FIG. 13 showing the characteristics of the comparative example, the electrical characteristics of Example 1 are in addition to the main passband. The formed pass band is suppressed to about 5 times the main pass band.

  In the second embodiment, as is clear from the comparison between the graph of FIG. 11 showing the characteristics and FIG. 10 showing the characteristics of the first embodiment, the undesired passband has a higher frequency than in the first embodiment. And the passband width is narrowed, and the coupling between the resonators is weakened.

  This is because the second dielectric portions 421 and 422 having a high dielectric constant are separated and independent from each other (see FIG. 4). This is presumably because a further decrease in the mode frequency is suppressed and the coupling between the resonators is weakly adjusted.

  Although the contents of the present invention have been specifically described above with reference to the preferred embodiments, it is obvious that those skilled in the art can take various modifications based on the basic technical idea and teachings of the present invention. It is.

It is a disassembled perspective view which shows an example of the electronic component which concerns on this invention. FIG. 2 is an external perspective view of the electronic component shown in FIG. 1. FIG. 3 is an equivalent electric circuit diagram of the electronic component shown in FIGS. 1 and 2. It is a disassembled perspective view which shows another Example of the electronic component which concerns on this invention. It is a disassembled perspective view which shows another Example of the electronic component which concerns on this invention. FIG. 6 is an external perspective view of the electronic component shown in FIG. 5. FIG. 7 is a cross-sectional view taken along line 7-7 in FIG. FIG. 8 is a cross-sectional view taken along line 8-8 in FIG. 6. FIG. 9 is an electrical equivalent circuit diagram of the electronic component shown in FIGS. It is a graph which shows the electrical property in the specific Example of the electronic component shown in FIGS. It is a graph which shows the electrical property in the specific Example of the electronic component shown in FIG. It is a disassembled perspective view of the electronic component which is a comparative example. It is a graph which shows the electrical property in the specific Example of the electronic component shown in FIG.

Explanation of symbols

1 Dielectric substrate
41 1st dielectric part 42,421,422 2nd dielectric part
111-117 Dielectric layers 211, 212, 215 Capacitor electrodes 216, 219, 220 Capacitor electrodes
234 to 237 Capacitor electrode

Claims (5)

An electronic component including a dielectric substrate, a capacitance component, and an inductance component,
The dielectric substrate includes a first dielectric layer, a second dielectric layer, and a third dielectric layer,
The first dielectric layer has a ground conductor on one side;
The second dielectric layer has a capacitor electrode on one side and the other side is overlaid on the one side of the first dielectric layer;
The third dielectric layer includes a first dielectric portion and a second dielectric portion, the other capacitor electrode provided on the second dielectric portion on one side, and the first dielectric portion An inductor conductor provided in a dielectric portion, the other surface is overlaid on the one surface of the second dielectric layer,
The second dielectric portion has a higher dielectric constant than the first dielectric portion, and is provided inside the first dielectric portion;
The capacitance component is acquired, and the capacitor electrode provided on the second dielectric layer, the said other capacitor electrode provided on the third dielectric layer, the second dielectric portion as a capacitive layer Including the capacitor to be
The inductance component is due to the inductor conductor , and constitutes a resonator together with the capacitance component .
Electronic components. An electronic component including a dielectric substrate, a capacitance component, and an inductance component,
The dielectric substrate includes a first dielectric layer, a second dielectric layer, a third dielectric layer, a fourth dielectric layer, a fifth dielectric layer, and a sixth dielectric layer. And
The first dielectric layer has a first ground conductor on one side;
The second dielectric layer has an inductor conductor on one side, and the other side is overlaid on the one side of the first dielectric layer,
The third dielectric layer has a coupling conductor on one side, and the other side is overlaid on the one side of the second dielectric layer;
The fourth dielectric layer has a first capacitor electrode on one side and the other side is overlaid on the one side of the third dielectric layer;
The fifth dielectric layer has a second capacitor electrode on one side, and the other side is overlaid on the one side of the fourth dielectric layer;
The sixth dielectric layer has a second ground conductor on one side and the other side is overlaid on the one side of the fifth dielectric layer;
In the fourth dielectric layer, the first capacitor electrode is composed of two capacitor electrodes arranged with a gap therebetween, and the two capacitor electrodes sandwich the fourth dielectric layer, Facing the coupling conductor,
In the fifth dielectric layer, the second capacitor electrode is composed of two capacitor electrodes arranged with a gap therebetween, and overlaps the first capacitor electrode with the fifth dielectric layer interposed therebetween. And the second capacitor electrode is conductively connected to one end of the inductor conductor by a via-hole conductor penetrating the third dielectric layer, the fourth dielectric layer, and the fifth dielectric layer.
The sixth dielectric layer includes a first dielectric portion and a second dielectric portion;
The second dielectric portion has a relative permittivity ε2 higher than the relative permittivity ε1 of the first dielectric portion;
The second ground conductor formed on one surface of the sixth dielectric layer is commonly connected to the second capacitor electrode provided on the one surface of the fifth dielectric layer via a second dielectric portion. Overlap,
The capacitance component includes a capacitor obtained by using the fifth dielectric layer as a capacitance layer by the first capacitor electrode and the second capacitor electrode, and the second dielectric by the second ground conductor and the second capacitor electrode. Including a capacitor obtained as a capacitive layer of the body part,
The inductance component is due to the inductor conductor, and constitutes a resonator together with the capacitance component.
Electronic components. An electronic component according to claim 1 or 2,
At least two of the resonators are formed inside the dielectric substrate,
The second dielectric portions are separated and independent from each other for each of the resonators;
Electronic components.   4. The electronic component according to claim 1, wherein at least one surface of the second dielectric portion has a dielectric constant lower than that of the second dielectric portion. 5. An electronic component in contact with the body layer.   5. The electronic component according to claim 1, wherein the second dielectric portion is limited to a region where the capacitor electrode is formed. 6.

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