JP4378703B2 - High frequency circuit components - Google Patents

Description

  The present invention relates to a high-frequency circuit component that is used in a communication device such as a mobile phone and includes a plurality of filter circuits.

There is a demultiplexing circuit as one of high-frequency circuit components used in a transmission / reception circuit such as a mobile phone and a car phone used in the microwave band and UHF band.
For example, Patent Document 1 discloses a composite filter circuit that functions as a branching circuit. FIG. 4 is a diagram illustrating the composite filter circuit disclosed in Patent Document 1 as a circuit block of a composite filter including three filter circuits F1 to F3.
The composite filter circuit includes, for example, a low-pass filter F1, a band-pass filter F2, and a high-pass filter F3. The low-pass filter F1 is connected between the common port P1 and the first port P2, and its pass band is f1. Is set to The high pass filter F3 is connected between the common port P1 and the third port P4, and its pass band is set to f3 (> f1). The band pass filter F2 is connected in cascade between the common port P1 and the second port P3, and its pass band is set to f2 (f1 <f2 <f3). For example, the common port P1 is connected to an antenna circuit, and the first to third ports P2 to P4 are connected to a switch circuit or the like. With such a configuration, a plurality of high-frequency signals having different frequencies from the antenna circuit are obtained. While passing (demultiplexing) from the common port P1 to the first to third ports P2 to P4, the high-frequency signal input to the first to third ports P2 to P4 is passed to the common port P1.

As another high-frequency circuit component that functions as another branching circuit, there is a composite filter circuit shown in FIG. This composite filter circuit includes a filter circuit including a phase circuit φ and a surface acoustic wave filter SAW, and the filter F1 is connected between the common port P1 and the first port P2, and its passband is set to f1. ing. The filter F2 is connected between the common port P1 and the second port P3, and its pass band is set to f2. The filter F3 is connected between the common port P1 and the third port P4, and its pass band is set to f3. The pass band is set to f1 <f2 <f3.
JP2004-194240

  Conventional high-frequency circuit components are usually customized for one or more different high-frequency circuits, and one high-frequency circuit component is used. Alternatively, it does not correspond to a high-frequency circuit that corresponds to a higher frequency than that and has a different number of high-frequency signal paths. This is because of the following reasons.

The high-frequency circuit components disclosed in Patent Document 1 and other examples handle high-frequency signals having three different frequencies. In order to use this high-frequency circuit component in a high-frequency circuit that handles high-frequency signals of two different frequencies, simply use one of the first to third ports P2 to P4 without connecting to another high-frequency circuit. .
For example, as shown in FIG. 11, the common port P1, the first and third ports P2, P4 are connected to a high frequency circuit (shown as load impedances ZL1 to ZL3 in the drawing), and the second port P3 is opened. If comprised in this way, the said high frequency circuit component functions as a high frequency circuit which handles the high frequency signal of two different frequencies.
However, in the above-described configuration, the impedance when the second port P3 is viewed from the common port P1 does not appear to be sufficiently large, and as a result, a part of the high-frequency signal is absorbed to the second port P3 side. In some cases, the loss of high-frequency signals to pass through the ports P1 and P3 may be increased, and it is difficult to apply one high-frequency circuit component to a plurality of high-frequency circuits.
In addition, the fact that a high-frequency circuit component customized in accordance with the high-frequency signal to be handled requires man-hours, equipment, jigs, etc. for manufacturing the high-frequency circuit component accordingly. For this reason, there has been a limit to reducing the manufacturing cost of high-frequency circuit components.
Therefore, the present invention has an object to provide a high-frequency circuit component that is compatible with one or more different frequencies, can be applied to high-frequency circuits having different numbers of high-frequency signal paths, and has excellent electrical characteristics. .

According to a first aspect of the present invention, a high frequency signal input to the common port by a filter circuit having a different pass band connected to each of signal paths between the common port and the first to nth ports (n is a natural number of 2 or more). A high-frequency circuit component having a high-frequency circuit for passing a signal to any one of the signal paths of the first to n-th ports formed on an insulating substrate, and a first reactance that is directly connected in series with a common port to each signal path A filter circuit connected to each signal path is configured with a second reactance element or a surface acoustic wave filter disposed at a stage subsequent to the first reactance element. The second reactance element constituting one of the filter circuits is formed with an electrode pattern, or a surface acoustic wave filter is mounted, and is directly connected in series with the common port. It is configured such that the first reactance element of each filter circuit are mounted, said placed on an insulating substrate a first reactance element as a mounting part, or by not installing the common port and the second reactance element or a surface acoustic The high-frequency circuit component is characterized in that the state of electrical connection with the wave filter is selected, and the number of high-frequency signal paths of the high-frequency circuit component can be changed to be smaller than the number of ports n .

Oite The present onset bright, at least one of said filter circuit, a low pass filter circuit, a bandpass filter circuit, I or Der high-pass filter circuit, the low pass filter circuit, a first connecting directly to the common port An inductance element that is a reactance element and a parallel resonance circuit of an inductance element that is a second reactance element and a capacitance element are connected in series at a subsequent stage, and a capacitance element that is a second reactance element that further grounds the parallel resonance circuit. The band-pass filter circuit includes a capacitance element that is a first reactance element that is directly connected to a common port, and a parallel resonance circuit of an inductance element that is a second reactance element and a capacitance element at a subsequent stage. And further after the parallel resonant circuit A capacitance element or inductance element that is a first reactance element that is directly connected to the common port and a capacitance element that is a second reactance element that is connected to the common port, and an elasticity that is connected to the subsequent stage and mounted on the insulating substrate The high-pass filter circuit includes a surface acoustic wave filter, wherein the high-pass filter circuit includes a capacitance element that is a first reactance element that is directly connected to a common port, and a series resonance circuit that includes an inductance element that is a second reactance element and a capacitance element at a subsequent stage. grounded, preferably Ru der to include a capacitance element which is second reactance element which is further connected to the subsequent stage of the series resonant circuit.

In the present invention, it is preferable that an ESD countermeasure inductance element for grounding a common port is mounted on the insulating substrate, and the common port is connected to a multiband antenna. In this case, a matching circuit or the like may be interposed between the multiband antenna and the high-frequency circuit component. It is also preferable to connect the common port to a high frequency switch circuit having a switch element.

  A second invention is a mobile phone characterized in that the high-frequency circuit component of the first invention is arranged in a high-frequency circuit section between a multiband antenna and a transmission circuit and a reception circuit. The high-frequency circuit unit may include a transmission signal amplifier, a reception signal amplifier, and a switch circuit control unit that controls switching of the high-frequency switch circuit, and these circuits may be provided as an RF-IC.

  By the above simple method, it is possible to provide high-frequency circuit components with excellent electrical characteristics that can be applied to high-frequency circuits with different numbers of high-frequency signal paths. In addition to high-frequency circuit components, mobile phones using the same The manufacturing cost can be reduced.

A high-frequency circuit component according to an embodiment of the present invention will be described in detail below.
FIG. 1 is an equivalent circuit showing an example of a high-frequency circuit component (composite filter circuit), and FIG. 2 is an external perspective view thereof. This high-frequency circuit component is a demultiplexer configured by a low-pass filter F1, a band-pass filter F2, and a high-pass filter F3, which demultiplexes high-frequency signals having three different frequencies. Same as 4.
The high-frequency circuit component according to an embodiment of the present invention includes a low-pass filter F1 between the common port P1 and the first port P2, and a band-pass filter F2 and the common port P1 between the common port P1 and the second port P3. A high-pass filter F3 is disposed between the third ports P4, and the filters F1 to F3 are each composed of a reactance element.

Among the reactance elements constituting each of the filters F1 to F3, the low-pass filter F1 includes the inductance element La2, the capacitance elements Ca1 and Ca2, the band-pass filter F2 includes the inductance elements Lg1 and Lg2, the capacitance elements Cg2 to Cg4, and the high-pass filter F3 includes the inductance element. Lp1 and capacitance elements Cp2 and Cp3 are laminated and formed on an insulating substrate 10 formed of, for example, a ceramic multilayer substrate by electrode patterns such as line electrodes and capacitor electrodes.
An inductance element La1 and capacitance elements Cg1 and Cp1, which are reactance elements A that are arranged in series in the signal path and directly connected to the common port P1, are mounted on the main surface of the insulating substrate 10. The electrode is configured to be mounted by soldering as a mounting component.
In the present embodiment, the reactance elements La1, Cg1, and Cp1 are arranged as mounting components between the common port P1 to the first, second, and third ports P2 to P3, respectively. It has a structure in which electrical connection is not taken in high frequency between P1 to P4.

In addition, external terminals corresponding to the ports P1 to P4 are formed on the outer surface of the high-frequency circuit component, and are appropriately connected to the reactance elements via via holes. In the figure, an external terminal labeled GND is connected to a ground electrode pattern formed on the insulating substrate 10.
In this manner, a high-frequency composite component that is a demultiplexer that demultiplexes high-frequency signals having three different frequencies was configured.

  Next, an embodiment in which an insulating substrate 10 used for the high frequency circuit component is used as a high frequency circuit component corresponding to two different frequencies will be described. As described above, the insulating substrate 10 has a structure in which electrical connection between the ports P1 to P4 is not performed at high frequencies. Therefore, the reactance elements La and Cp1 are mounted on the insulating substrate 10, but the reactance element Cg1 is not mounted, and a high-frequency circuit component is manufactured. FIG. 3 is an external perspective view thereof. The equivalent circuit of this high-frequency circuit component is exactly the same as the state without the capacitance element Cg1 of the equivalent circuit shown in FIG.

FIG. 5 is a diagram showing the high-frequency circuit component as a circuit block. Although the reactance element that constitutes the filter F2 is formed on the insulating substrate 10, the capacitance element Cg1 that is a reactance element that is directly connected to the common port P1 is not disposed. Therefore, the second port P3 is connected to the common port P1. Is not visible in high frequency. Therefore, a part of the high-frequency signal is not absorbed to the second port P3 side, and the loss of the high-frequency signal that should pass through the first or third port P1, P3 is not increased. And a high-frequency circuit component corresponding to two different frequencies constituted by the high-pass filter F2.
Furthermore, if either one of the reactance elements La and Cp1 is not disposed on the mounting substrate 10, the high-frequency circuit component can function as a low-pass filter or a single functional component of a high-pass filter. In this embodiment, the case where the capacitance element Cg1 is not disposed has been described. However, the present invention is not limited to this, and it may be configured that any of the other reactance elements La and Cp1 may not be disposed. Needless to say.
When a certain signal path is always used, the reactance element directly connected to the common port P1 of the path may be configured with an electrode pattern instead of a mounted component.

FIG. 6 shows an equivalent circuit of a high-frequency circuit component according to another embodiment of the present invention. The difference from the equivalent circuit of the high-frequency circuit component shown in FIG. 1 is that the filter F2 is not composed only of reactance elements, but is a filter that combines a surface acoustic wave filter SAW and a phase circuit that adjusts the phase of the high-frequency signal. This is the point. The phase circuit is composed of a reactance element.
FIG. 7 is an external perspective view of the high-frequency circuit component according to this embodiment. Among the reactance elements constituting each of the filters F1 to F3, the low-pass filter F1 includes an inductance element La2, capacitance elements Ca1 and Ca2, the band-pass filter F2 includes an inductance element Lg1 that forms a phase circuit, and the high-pass filter F3 includes an inductance element Lp1 and capacitance. The elements Cp2 and Cp3 are stacked on the insulating substrate 10 with electrode patterns such as line electrodes and capacitor electrodes.
An inductance element La1 and capacitance elements Cg1 and Cp1 which are arranged in series in the signal path and are directly connected to the common port P1 are mounted electrodes formed on the main surface of the insulating substrate 10. In addition, it is configured to be mounted by soldering together with a surface acoustic wave filter SAW and an inductance element LT1 for ESD (Electro Static Discharge) as mounting parts.

Also in the present embodiment, the insulating substrate 10 has a structure in which electrical connection is not performed at high frequencies between the ports P1 to P4. On the back surface of the high-frequency circuit component, an external terminal having an LGA (Land Grid Array) structure corresponding to each of the ports P1 to P4 is formed and is appropriately connected to each reactance element through a via hole.
Also in this embodiment, the number of high-frequency signal paths of the high-frequency circuit component is changed depending on whether or not the inductance element La1 and the capacitance elements Cg1 and Cp1 which are reactance elements A directly connected to the common port P1 are arranged. Is possible.

FIG. 8 shows an equivalent circuit of a high-frequency circuit device according to another embodiment of the present invention. The difference from the equivalent circuit of the high-frequency circuit component shown in FIG. 1 or FIG. 6 is that the filters F1 to F3 are not composed of only reactance elements, but a phase circuit that adjusts the phase of the surface acoustic wave filter SAW and the high-frequency signal. It is a point which makes the filter which combined.
Also in this case, the inductance elements Lp1 and capacitance elements Cg1 and Cd1, which are reactance elements that are directly connected to the signal path and are directly connected to the common port P1, are mounted as surface acoustic wave filters SAW, ESD ( It is configured to be mounted by soldering together with an inductance element LT1 for countermeasures against Electro Static Discharge). The other reactance elements Cd2 and Ld1 are formed on the insulating substrate 10.

  Also in this embodiment, the number of high-frequency signal paths of the high-frequency circuit components is changed depending on whether or not the inductance element Lp1 and the capacitance elements Cg1 and Cd1 which are reactance elements A directly connected to the common port P1 are arranged. Is possible.

FIG. 9 shows an equivalent circuit of a high-frequency circuit device according to another embodiment of the present invention. This high-frequency circuit component is a composite integration of a switch circuit and a filter circuit, and is also called a high-frequency switch module.
This high-frequency switch module is compatible with four communication systems in a mobile phone, and includes two filters F1 and F2 made of reactance elements. The common port Pf1 is connected to the antenna ANT, and the first port Pf2 is high-frequency. A demultiplexing circuit Dip1 is connected to the switch SW1, and the second port Pf3 is connected to the high frequency switch SW2, and two filters F1 and F2 including a reactance element and a surface acoustic wave filter are provided, and the common port Pd1 is connected to the high frequency switch SW1. The branching circuit Dip2 is connected, the first port Pd2 is connected to the receiving circuit Rxa of the first communication system (eg GSM850), and the second port Pd3 is connected to the receiving circuit Rxg of the second communication system (eg GSM900). And reactance elements and elastic surfaces constituting the phase circuit The common port Pi1 is connected to the high frequency switch SW2, the first port Pi2 is connected to the reception circuit Rxd of the third communication system (for example, DCS1800), and the second port Pi3 is provided. Includes a branching circuit Dip3 connected to the receiving circuit Rxp of the fourth communication system (for example, PCS).
The ports Ps2 and Psw2 that are not connected to the branching circuits Dip2 and 3 of the high-frequency switches SW1 and SW2 are the transmission circuit Txag of the first and second communication systems and the transmission circuit Txdp of the third and fourth communication systems, respectively. Connected to. As the high frequency switches SW1 and SW2, known switches using field effect transistors or diodes as switching elements may be used.

  In the present embodiment, in the branching circuits Dip1 to Dip1-3, the inductance element Lf1 and the capacitance elements Cf2, Ca1, Cg1, Cd1, and Cp1 which are reactance elements A directly connected to the respective common ports Pf1, Pd1, and Pi1 are insulated. It is configured to be disposed as a mounting component on the substrate 10. The other reactance elements are formed as electrode patterns on the insulating substrate 10 or are appropriately mounted on the insulating substrate 10 together with the surface acoustic wave filter SAW and switching elements as mounting components.

For example, when the reactance element Lf1 is not arranged in the filter F1 of the branching circuit Dip1, the ports P1 to P4 cannot be seen. For this reason, the high frequency signal is transmitted between the port P1 and the ports P5 to P7. The high-frequency circuit component in this case is a dual-band high-frequency switch module corresponding to the third and fourth communication systems. Further, when either one of the reactance elements Cd1 and Cp1 connected to the common port Pi1 of the branching circuit Dip3 is not arranged, a single-band high-frequency switch module corresponding to one communication system is obtained. Similarly, when the reactance element Cf2 is not disposed in the filter F2 of the branching circuit Dip1, the high-frequency circuit component can be used as a dual-band or single-band high-frequency switch module.
Needless to say, mounting parts such as a switching element and a surface acoustic wave filter are not necessary on a path that is not used, and does not need to be mounted on an insulating substrate. For this reason, even when the number of high-frequency signal paths of the high-frequency circuit components is reduced, unnecessary cost does not occur.

  Further, when the reactance element Ca1 of the branching circuit Dip2 is not arranged, a triple band high frequency switch module corresponding to the second to fourth communication systems is obtained. Further, when the reactance element Cp1 of the branching circuit Dip3 is not disposed, a dual-band high-frequency switch module corresponding to the second and third communication systems can be obtained. As described above, it can be seen that the high-frequency circuit component according to the present invention can be used for various mobile phones ranging from a single band to a multiband.

  According to the present invention, it is possible to change the number of high-frequency signal paths of a high-frequency circuit component by a simple method, corresponding to one or more different frequencies, and high-frequency signals having different numbers of high-frequency signal paths. It is possible to provide a high-frequency circuit component that is compatible with a circuit and has excellent electrical characteristics, and it is possible to reduce the manufacturing cost of a cellular phone using the high-frequency circuit component as well as the high-frequency circuit component.

It is an equivalent circuit diagram of the high frequency circuit component which concerns on one Example of this invention. 1 is an external perspective view of a high-frequency circuit component according to an embodiment of the present invention. 1 is an external perspective view of a high-frequency circuit component according to an embodiment of the present invention. It is a circuit block diagram of the high frequency circuit component which concerns on one Example of this invention. It is a circuit block diagram which shows the example of a high frequency circuit structure using the high frequency circuit component which concerns on one Example of this invention. It is the equivalent circuit schematic of the high frequency circuit component which concerns on the other Example of this invention. It is an external appearance perspective view of the high frequency circuit component which concerns on the other Example of this invention. It is the equivalent circuit schematic of the high frequency circuit component which concerns on the other Example of this invention. It is the equivalent circuit schematic of the high frequency circuit component which concerns on the other Example of this invention. It is an equivalent circuit diagram of the conventional high frequency circuit component. It is a circuit block diagram which shows the example of a high frequency circuit structure using the conventional high frequency circuit component.

Explanation of symbols

P1, P2, P3, P4, P5, P6, P7 Port SAW Surface acoustic wave filters F1, F2, F3 Filters Zl1, Zl2, Zl3 Load impedance 10 Insulating substrate

Claims (5)

The high-frequency signal input to the common port is first to first by a filter circuit having a different pass band connected to each of the signal paths between the common port and the first to n-th ports (n is a natural number of 2 or more) . A high-frequency circuit component configured on an insulating substrate with a high-frequency circuit that passes through any of the n-port signal paths,
Each signal path has a first reactance element directly connected in series with a common port, and a second reactance element or a surface acoustic wave filter disposed after the first reactance element, Configure the connected filter circuit,
On the insulating substrate, the second reactance element constituting one of the filter circuits is formed as an electrode pattern on the inner layer, or a surface acoustic wave filter is mounted, and each filter circuit directly connected in series with the common port The first reactance element is configured to be mounted;
By installing or not installing the first reactance element as a mounting component on the insulating substrate, the state of electrical connection between the common port and the second reactance element or the surface acoustic wave filter is selected, and the high frequency circuit component A high-frequency circuit component, wherein the number of high-frequency signal paths can be changed to be smaller than the number of ports n . At least one of said filter circuit, a low pass filter circuit, a bandpass filter circuit, I or Der high-pass filter circuit,
In the low-pass filter circuit, an inductance element that is a first reactance element that is directly connected to a common port, and a parallel resonance circuit of an inductance element that is a second reactance element and a capacitance element are connected in series, and the parallel A capacitance element that is a second reactance element for grounding the resonant circuit;
The band-pass filter circuit grounds a parallel resonant circuit of a capacitance element as a first reactance element directly connected to a common port and an inductance element and a capacitance element as a second reactance element at a subsequent stage, and further performs the parallel resonance. A capacitance element that is a second reactance element connected to a subsequent stage of the circuit, or a capacitance element or an inductance element that is a first reactance element directly connected to the common port, and is connected to the subsequent stage and mounted on an insulating substrate Including a surface acoustic wave filter,
The high-pass filter circuit includes a capacitance element that is a first reactance element that is directly connected to a common port, and a series resonance circuit that includes an inductance element that is a second reactance element and a capacitance element at a subsequent stage. high-frequency circuit component according to claim 1, characterized in der Rukoto those containing capacitance element is a second reactance element connected to the subsequent stage. The high frequency circuit component according to claim 1 or 2, wherein an ESD countermeasure inductance element for grounding a common port is mounted on the insulating substrate, and the common port is connected to a multiband antenna . 4. The high-frequency circuit component according to claim 1, wherein the common port is connected to a high-frequency switch circuit having a switch element . 5. A cellular phone comprising the high-frequency circuit component according to claim 1 disposed between a multiband antenna, a transmission circuit, and a reception circuit.

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