JP4329817B2 - Pattern forming method and electronic circuit - Google Patents

Description

  The present invention relates to a pattern forming method provided in an electronic circuit and the like, and an electronic circuit such as a plasma display substrate.

A plasma display panel (hereinafter also referred to as “PDP”) can be reduced in thickness, can be easily increased in size, and has features such as light weight and high resolution. Therefore, it is attracting attention as a promising candidate for replacing a CRT as a display device. Has been.
PDPs are roughly classified into DC type and AC type, and the operation principle is based on the light emission phenomenon accompanying gas discharge. For example, in the AC type, as shown in FIG. 13, a cell space is defined by partition walls 3 formed between a transparent front substrate 1 and a rear substrate 2 arranged so as to face each other. Encloses a Penning mixed gas such as He + Xe, Ne + Xe and the like that has low visible light emission and high ultraviolet light emission efficiency. Then, plasma discharge is generated in the cell, and the phosphor layer 9A on the inner wall of the cell is caused to emit light to form an image on the display screen.

  The PDP is generally provided on the front substrate 1 with a display electrode 5 for generating plasma discharge, and a bus electrode 6 provided on a part of the display electrode 5 to reduce the resistance of the display electrode 5. The dielectric layer 8 and the MgO layer 9 that prevent the display electrode 5 and the bus electrode 6 from being eroded by plasma and coming into contact with the electrodes formed on the back substrate 2, and if necessary, It has a plasma display substrate provided with black stripes 4 that reduce reflection of external light. Further, an address electrode 7 for writing information is provided on the back substrate 2.

  When manufacturing a PDP, the display electrode 5 is formed on the front substrate 1 using a transparent conductive material, and then the bus electrode 6 is formed on a part of the display electrode 5 using a conductive material. When the black stripe 4 is provided, the black stripe 4 is further formed. Next, the dielectric layer 8 and the MgO layer 9 are formed (see Patent Document 1, Non-Patent Document 1, and Non-Patent Document 2).

By the way, when forming the display electrode 5, the bus electrode 6, etc., the thin layer formed using the conductive material is processed into a predetermined shape. As a method for processing the shape of the thin layer, wet etching using a resist is employed.
However, the thin layer processing by wet etching first forms a resist layer on the thin layer, then exposes and develops the resist layer to form openings in the resist layer, and then uses an etching solution. Many steps are required to be done by etching the thin layer exposed in the opening and finally stripping the resist layer.

Further, since wet etching is performed every time each member such as the display electrode 5 and the bus electrode 6 is formed, the wet etching is performed a plurality of times when one PDP is manufactured.
Therefore, when the thin film is processed into a predetermined shape by wet etching, the number of steps required for manufacturing the PDP becomes enormous. When the number of steps is large, the number of operations required for manufacturing increases, resulting in inconveniences such as an increase in complicated operations and an increase in cost.

Further, it has been proposed to form the black stripe 4 on the front substrate 1 in order to further improve the contrast and make the image clearer.
However, the black stripe 4 is formed in a separate process from the display electrode 5 and the bus electrode 6. Also, when the black stripe 4 is formed, it is necessary to obtain a predetermined shape by wet etching. Therefore, the number of steps required for manufacturing the PDP further increases by forming the black stripe 4.

  Moreover, since the etching solution used for wet etching exhibits strong acidity and strong alkalinity, for example, if it is discarded as it is, it has problems such as a large environmental load and is difficult to handle. Therefore, when wet etching is performed when manufacturing a PDP, it becomes necessary to perform complicated operations associated with the handling of the etching solution, and the number of steps required for manufacturing further increases.

Furthermore, the wet etching is also used when a pattern of an electronic circuit other than the above-described PDP is formed.
In recent years, the pattern of electronic circuits has become more complex in order to cope with a rapidly advanced information society. Therefore, as the pattern becomes more complicated, the number of processes by performing wet etching is greatly increased even when an electronic circuit is manufactured, and there are inconveniences such as an increase in complicated operations as described above and an increase in cost. Arise.
JP-A-7-65727 Tatsuo Uchida and Hiraki Uchiike, “Flat Panel Display Dictionary”, Industrial Research Committee, December 25, 2001, p. 583-585 Takeshi Okumura, “Flat Panel Display 2004 Practice”, Nikkei Business Publications, p. 176-183

  The present invention has been proposed in view of the conventional situation described above, and provides a pattern forming method capable of reducing the number of steps and reducing the cost without performing wet etching. Objective. Moreover, it aims at providing an electronic circuit provided with the pattern formed by this formation method.

  In order to solve the above-described problems, the present invention provides a pattern forming method and an electronic circuit shown in the following (1) to (17).

(1) An antireflection layer forming step of forming an antireflection layer on one main surface side of the transparent substrate, and an antireflection layer opening forming step of forming an opening by irradiating the antireflection layer with a first laser beam. And a mask layer forming step for forming a mask layer on the one main surface side of the transparent substrate, and a mask layer opening forming step for forming an opening in the mask layer, after the antireflection layer opening forming step. A thin film layer forming step of forming a thin film layer on the one main surface side of the transparent substrate after the mask layer opening forming step; and a thin film layer forming step after the thin film layer forming step. A transparent layer on the one main surface side of the transparent substrate, before the antireflection layer forming step, after the antireflection layer opening forming step or after the peeling step. The transparent layer forming step to be formed and the transparent layer forming Downstream of the extent, and a transparent layer opening portion forming step of irradiating a second laser beam to form an opening in the transparent layer pattern forming method.

(2) The mask layer forming step includes an ultraviolet curable resin coating step of applying an ultraviolet curable resin to the one main surface side of the transparent substrate, and the other main surface side of the transparent substrate with respect to the ultraviolet curable resin. The pattern formation method as described in said (1) provided with the ultraviolet resin hardening process of irradiating an ultraviolet-ray and hardening | curing the said ultraviolet curable resin.

(3) The pattern forming method according to (1) or (2), wherein in the peeling step, the mask layer is irradiated with a third laser beam to peel the mask layer from the transparent substrate.

(4) the third laser beam, wavelength of 500 to 1500 nm, the energy density is less than 0.1 J / cm ² or more 1 J / cm ^2, the pattern forming method according to (3).

(5) The antireflection layer includes a first antireflection layer containing chromium oxide and / or titanium oxide, and a second antireflection layer containing metal chromium and / or metal titanium (1) ) To (4).

(6) The pattern forming method according to any one of (1) to (5), wherein the mask layer is formed using an organic material.

(7) The said mask layer is a pattern formation method in any one of said (1)-(6) containing a black pigment or a black dye.

(8) The pattern formation according to any one of (1) to (7), wherein the first laser beam has a wavelength of 500 to 1500 nm and an energy density of 1 J / cm ² or more and less than ² J / cm ^2. Method.

(9) The pattern forming method according to any one of (1) to (8), wherein the second laser beam has a wavelength of 500 to 1500 nm and an energy density of ² to 40 J / cm ² .

(10) The pattern forming method according to any one of (1) to (9), wherein the thin film layer includes metal chromium and / or metal titanium and metal copper.

(11) The pattern forming method according to any one of (1) to (10), further including a protective layer forming step of forming a protective layer after the thin film layer forming step.

(12) An electronic circuit including a pattern formed by the pattern forming method according to any one of (1) to (11).

(13) An electronic device having the electronic circuit according to (12).

(14) A method for forming a plasma display substrate, comprising a step of forming a pattern by the pattern forming method according to any one of (1) to (11).

(15) The first antireflection layer made of chromium oxide and / or titanium oxide, the second antireflection layer made of metal chromium and / or titanium, and metal copper are formed on one main surface side of the transparent substrate. A plasma display substrate comprising a pattern having a thin film layer and a transparent layer made of SnO ₂ as an electrode and / or a black stripe for the plasma display substrate.

(16) The plasma display substrate according to (15), wherein the electrode and / or the black stripe has a visible light reflectance of 50% or less incident from the other main surface side of the transparent substrate.

(17) A plasma display panel comprising the plasma display substrate according to (15) or (16).

According to the pattern forming method of the present invention, since the antireflection layer also serves as a mask when forming the opening in the mask layer, without forming a mask for forming the opening in the mask layer, An opening can be formed in the mask layer. Therefore, according to the present invention, since wet etching is not performed, it is possible to form a pattern having a transparent layer and a thin film layer on a transparent substrate with fewer steps than in the past.
Therefore, according to the present invention, a pattern having a transparent layer and a thin film layer can be efficiently formed on a transparent substrate at a low cost. Further, an electronic circuit including a transparent substrate on which a pattern having a transparent layer and a thin film layer is formed can be efficiently formed at low cost.

  Further, in the conventional method, when the thickness of the thin film layer is large, it is difficult to directly pattern the thin film layer by irradiating the thin film layer with laser light because of the relationship between the laser output and the fracture energy density of the transparent substrate. According to the present invention, direct patterning is possible even when the thin film layer is thick.

Further, according to the present invention, a pattern using a transparent layer and a pattern using a thin film layer can be formed without performing wet etching.
Therefore, according to the present invention, since it is not necessary to use an etching solution exhibiting strong acidity or strong alkalinity, when forming an electronic circuit including a pattern using a transparent layer and a pattern using a thin film layer, It is possible to reduce troublesome work caused by handling the etching solution. In addition, an increase in the number of processes due to wet etching can be suppressed.

Further, when a plasma display substrate is formed by the pattern forming method of the present invention, the plasma display substrate black stripe and the plasma display substrate electrode (display electrode and bus electrode) can be formed simultaneously.
Further, by forming an antireflection layer on the transparent substrate, it is possible to avoid the appearance of bus electrodes and black stripes when an image is displayed using the plasma display substrate as a PDP.

1A to 1D are schematic views showing a transparent layer forming step and a transparent layer opening forming step in the pattern forming method of the present invention. 2E to 2H are schematic views showing an antireflection layer forming step and an antireflection layer opening forming step in the pattern forming method of the present invention. FIGS. 3I to 3N are schematic views showing a mask layer forming step, a mask layer opening forming step, a thin film layer forming step, and a peeling step in the pattern forming method of the present invention. FIG. 4 is a cross-sectional view showing a state where a light absorption thin film is formed between the mask layer and the transparent substrate. FIG. 5 is a cross-sectional view showing a state in which a protective layer is formed on the thin film layer. 6A is a cross-sectional view showing a state in which a reflective layer, a transparent layer, and a thin film layer are formed in this order, and FIG. 6B shows a state in which a reflective layer, a thin film layer, and a transparent layer are formed in this order. It is sectional drawing shown. FIG. 7 is a schematic plan view of a substrate having electrodes for plasma display substrates and / or black stripes formed according to a preferred embodiment of the method for forming electrodes and / or black stripes for plasma display substrates of the present invention. FIG. 8 is a schematic cross-sectional view taken along the line A-A ′ of the substrate shown in FIG. 7. FIGS. 9A and 9B are schematic diagrams illustrating a transparent layer forming step and a transparent layer opening forming step in the steps of forming electrodes for plasma display substrates and / or black stripes in the examples. FIGS. 10C to 10E are schematic views showing an antireflection layer forming step and an antireflection layer opening forming step among the steps of forming the electrode for the plasma display substrate and / or the black stripe in the embodiment. is there. FIGS. 11F to 11H are schematic views showing a mask layer forming step and a mask layer opening forming step in the steps of forming electrodes for plasma display substrates and / or black stripes in the examples. 12 (I) to 12 (K) are schematic views showing a thin film layer forming step, a protective layer forming step, and a peeling step among the steps of forming electrodes for plasma display substrates and / or black stripes in the examples. . FIG. 13 is a schematic diagram showing a schematic configuration of a conventional PDP.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Front substrate 2 Back substrate 3 Partition 4 Black stripe 5 Display electrode 6 Bus electrode 7 Address electrode 8 Dielectric layer 9 MgO layer 11 Phosphor layer 20 Transparent substrate 21 Transparent layer 22 Photomask 23 First antireflection layer 24 Second reflection Prevention layer 25 Photomask 27 Antireflection layer 28 Thin film layer 30 Mask layer 31 Light absorption thin film 34 Protective layer 41 Bus electrode 42 Black stripe 43 Display electrode 70 Glass substrate 80 Sputter deposition apparatus 81 Transparent layer 82 Photomask 83 First antireflection Layer 84 Second antireflection layer 85 Antireflection layer 86 Photomask 88 Mask film 90 Film laminator 92 UV curing device 94 Thin film layer 95 Protection layer L1 First laser beam L2 Second laser beam L3 Third laser beam UV UV

  Hereinafter, the present invention will be described in detail. The following description is an example of the present invention, and the present invention is not limited to this.

  The pattern forming method of the present invention will be described with reference to FIGS. First, a transparent layer 21 is formed on one main surface side of the transparent substrate 20 (FIGS. 1A and 1B: a transparent layer forming step), and then a second layer is formed on the transparent layer 21 via a photomask 22. Irradiation with the laser beam L2 forms an opening in the transparent layer 21 (FIGS. 1C and 1D: transparent layer opening forming step).

  Next, an antireflection layer 27 is formed by sequentially forming a first antireflection layer 23 and a second antireflection layer 24 on the one main surface side of the transparent substrate 20 (FIGS. 2E and 2F). ): Antireflection layer forming step), and then, the first antireflection layer 23 and the second antireflection layer 24 are irradiated with the first laser light L1 through the photomask 25, and the first antireflection layer 23 and the first antireflection layer 23 2 Openings are formed in the antireflection layer 24. (FIG. 2 (G) * (H): Antireflection layer opening formation process).

  Next, a mask layer 30 is formed on the transparent layer 21 and the second antireflection layer 24 (FIG. 3I: mask layer forming step), and then the other main surface side of the transparent substrate 20 is formed on the mask layer 30. Then, ultraviolet rays UV are irradiated, exposed and developed to form openings in the mask layer 30 (FIGS. 3 (J) and (K): mask layer opening forming step).

  Next, after forming the thin film layer 28 on the second antireflection layer 24 and the mask layer 30 (FIG. 3L: thin film layer forming step), the third laser beam L3 is applied to the mask layer 30 from the other main surface side. The mask layer 30 is peeled from the one main surface side of the transparent substrate 20 (FIGS. 3M and 3N: peeling step).

  By such a forming process, a pattern in which the transparent layer 21, the first antireflection layer 23, the second antireflection layer 24, and the thin film layer 28 are patterned is formed on the one main surface side of the transparent substrate 20. It becomes possible.

<Transparent substrate>
The transparent substrate 20 is not particularly limited as long as it is formed using a transparent material (in the present invention, a material having a visible light transmittance of 80% or more as defined in JIS R3106 (1998)). A specific example of the transparent substrate 20 is preferably a glass substrate. In particular, a glass substrate having a thickness of 0.7 to 3 mm used as a glass substrate for PDP is preferable.

  In the present invention, one of the main surfaces of the transparent substrate 20 on which the transparent layer 21, the first antireflection layer 23, the second antireflection layer 24, the thin film layer 28, and the like are formed is one main surface. The main surface on the side where the transparent layer 21, the first antireflection layer 23, the second antireflection layer 24, the thin film layer 28, etc. are not formed is referred to as the other main surface.

<Transparent layer forming step>
In the transparent layer forming step, the transparent layer 21 is formed on the one main surface side of the transparent substrate 20. The material used for forming the transparent layer 21 is not particularly limited as long as it is a conductive material having transparency, and a tin oxide such as ITO (Indium Tin Oxide) or tin oxide (SnO ₂ ) is used. it can. From the viewpoint of preventing erosion by the dielectric, SnO ₂ is preferably used, and particularly SnO ₂ containing 2 to 8% by mass of Sb is preferably used. The transparent layer is preferably peeled off by laser ablation with a second laser beam described later. The transparent layer preferably has a visible light transmittance of 80% or more as defined in JIS R3106 (1998).

The transparent layer 21 is preferably formed by a sputtering method or a vapor deposition method. The thickness of the transparent layer 21 is preferably 0.1 to 3 μm, 0.1 to 1 μm, and particularly preferably 0.1 to 0.5 μm from the viewpoint of easy patterning. When using as a display electrode, it is preferable that the thickness of the transparent layer 21 is 0.1-3 micrometers from the point of the electroconductivity and transparency. In order to make the transparent layer 21 have the above-mentioned thickness, it can be adjusted by controlling the film formation time by sputtering or vapor deposition.
The transparent layer 21 is formed, for example, by sputtering by using a transparent layer forming material such as ITO or SnO ₂ as a target and mixing a sputtering gas such as O _{2 with} Ar or the like.

<Transparent layer opening forming step>
In the transparent layer opening forming step, for example, the second transparent laser light L2 such as excimer laser light or YAG laser light is used, and the formed transparent layer 21 is evaporated and removed by using ablation and heat energy together. Form.

  The second laser light L2 is applied to the transparent layer 21 through the photomask 22. As a result, only the second laser light L2 that has passed through the opening provided in the photomask 22 is irradiated onto the transparent layer 21, and the transparent layer 21 is processed according to the shape of the photomask 22.

In forming the opening in the transparent layer opening forming step of the present invention, the second laser light L2 to be used preferably has a wavelength of 500 to 1500 nm, and preferably has an energy density of ² to 40 J / cm ^2. 2-5 J / cm ² is more preferable. The second laser light L2 may be a pulse or CW (continuous light).
Specific examples of such laser light include YAG laser light having a wavelength of 1064 nm, YAG laser light having a wavelength of 532 nm, and the like.
By irradiating the transparent layer 21 with such second laser light L2, the transparent layer 21 is reliably left on the surface of the transparent substrate 20 exposed at the opening only by an extremely short time irradiation. Can be formed.

<Antireflection layer forming step>
In the antireflection layer forming step, an antireflection layer is formed on the one main surface side of the transparent substrate 20. The antireflection layer preferably has the first antireflection layer 23 and the second antireflection layer depending on the requirement of the optical low reflection condition. In particular, the first antireflection layer 23 made of chromium oxide and / or titanium oxide, and metal chromium (hereinafter also referred to as “Cr”) and / or metal titanium (hereinafter also referred to as “Ti”). The antireflection layer 27 is preferably formed by sequentially forming the second antireflection layer 24. Moreover, it is preferable that an antireflection layer is a layer which peels by using ablation and a thermal energy together using the 1st laser beam L1 mentioned later.
By forming the antireflection layer, the visible light reflected by the first antireflection layer 23 and the visible light reflected by the second antireflection layer 24 interfere with each other, so that the reflectance of visible light is low. Thus, when displaying an image as a PDP, it can be avoided that the bus electrode and the black stripe are projected on the image.

<First antireflection layer>
In the present invention, the material of the first antireflection layer 23 preferably contains chromium oxide and / or titanium oxide. In particular, the material of the first antireflection layer 23 is preferably chromium oxide because it is highly durable, can prevent the oxidation of Cu, which is a material of the electrode, and easily exhibits reflection performance. If 95 mass% or more of chromium oxide and / or titanium oxide is contained with respect to the entire material forming the first antireflection layer 23, it is preferable as the antireflection layer in the present invention.

Here, the chromium oxide includes Cr ₂ O _{3 in} which oxygen is not deficient, oxygen deficient CrO _x (1.0 ≦ X <1.5), and the like. It is particularly preferable that the chromium oxide is oxygen-deficient CrO _X (1.0 ≦ X <1.5) because the reflection characteristics are good.
In addition, the titanium oxide includes TiO ₂ that is not deficient in oxygen, oxygen deficient TiO _x (1.0 ≦ X <2.0), and the like. It is particularly preferable that the titanium oxide is oxygen deficient TiO _X (1.0 ≦ X <2.0) because the reflection characteristics are good.

The first antireflection layer 23 may further contain carbon, nitrogen, or the like. By containing carbon and / or nitrogen in the material forming the first antireflection layer 23, the extinction coefficient and the refractive index of the film can be finely adjusted, so that the optical characteristics of the second antireflection layer 24 are matched. Therefore, it is preferable in that the antireflection property can be easily improved in the laser wavelength range used in the present invention from the visible region. When nitrogen is contained in the chromium oxide, the composition of the first antireflection layer 23 is 0.3 ≦ Y ≦ 0.55, 0.03 when expressed as Cr _1−Y−Z O _Y N _Z It is preferable that ≦ Z ≦ 0.2, and the chromium oxide includes such nitrogen-containing chromium oxide.

  The thickness of the first antireflection layer 23 is preferably 30 to 100 nm. When the thickness is 30 to 100 nm, the antireflection property can be good. Further, the thickness may be appropriately adjusted within the above range from the refractive index and extinction coefficient of the film.

The first antireflection layer 23 is preferably substantially transparent, and preferably has a refractive index of 1.9 to 2.8 at a wavelength of 550 nm, and is 1.9 to 2.4. Is more preferable. Within this range, the reflected light from the first antireflection layer 23 and the reflected light from the second antireflection layer 24 interfere with each other, so that the reflectance of visible light incident on the antireflection layer 27 is low. Become.
Note that substantially transparent means that the extinction coefficient is 1.5 or less, more preferably 0.7 or less. Thus, sufficient light interference can be generated.
Further, the first antireflection layer 23 may have a structure in which a plurality of films are stacked. Specifically, a laminate in which chromium oxide and chromium nitride are sequentially laminated from the substrate is exemplified.

<Second antireflection layer>
In the present invention, the second antireflection layer 24 preferably contains Cr and / or Ti. In particular, the material of the second antireflection layer 24 is preferably Cr because it is highly durable, can prevent oxidation of Cu as a material of the electrode, and easily exhibits reflection performance. When Cr and / or Ti is contained in an amount of 95% by mass or more with respect to the entire material forming the second antireflection layer 24, the antireflection characteristics can be improved.
The second antireflection layer 24 may further contain carbon, nitrogen, or the like. By containing carbon and / or nitrogen in the material forming the second antireflection layer 24, the extinction coefficient and the refractive index of the film can be finely adjusted, so that the optical characteristics of the second antireflection layer 24 are matched. Therefore, it is preferable in that the antireflection property can be easily improved in the laser wavelength range used in the present invention from the visible region.

  The second antireflection layer 24 in the present invention preferably has a low light transmittance, and is preferably substantially opaque in the visible light region. Substantially opaque means that the visible light transmittance is 0.0001 to 0.1%. The thickness of the second antireflection layer 24 is preferably 10 to 200 nm, particularly preferably 20 to 100 nm, in terms of antireflection characteristics and patterning properties. Moreover, since the 2nd antireflection layer 24 plays the role of the protective layer of the thin film layer formed on the 2nd antireflection layer 24 because the 2nd antireflection layer 24 contains Cr, it is more preferable. It is further preferable that the material of the thin film layer is copper because the second antireflection layer 24 containing Cr functions more effectively as a protective layer.

The first antireflection layer 23 and the second antireflection layer 24 in the present invention are formed by a sputtering method or a vapor deposition method, similarly to the transparent layer 21. In order to form the Cr layer as the second antireflection layer 24 by the sputtering method, sputtering may be performed using a Cr target in an inert atmosphere such as Ar. The same applies when forming a Ti layer. Here, N ₂ , CH _4, or the like may be mixed with Ar or the like for sputtering.
Moreover, in order to form the chromium oxide layer which is the first antireflection layer 23, it is possible to use a chromium oxide target in addition to a method of performing sputtering in an atmosphere containing oxygen using a Cr target. . The same applies when the titanium oxide layer is formed. Here, N ₂ , CH ₄ , CO ₂ or the like may be mixed with Ar or the like for sputtering.

  Similar to the transparent layer 21, the thicknesses of the first antireflection layer 23 and the second antireflection layer 24 can be adjusted by controlling the film formation time by sputtering or vapor deposition.

  The antireflection layer forming step in the present invention is not limited to an embodiment in which only two layers of the first antireflection layer 23 and the second antireflection layer 24 exemplified in the above preferred embodiment are formed. In addition, one or more layers may be formed.

<Antireflection layer opening forming step>
In the anti-reflection layer opening forming step, the first anti-reflection layer 23 and the second anti-reflection are formed by using ablation and thermal energy in combination using, for example, the first laser light L1 such as excimer laser light or YAG laser light. The layer 24 is removed by evaporation to form an opening.
The first laser light L1 is applied to the first antireflection layer 23 and the second antireflection layer 24 through the photomask 25. As a result, only the first laser light L1 transmitted through the opening provided in the photomask 25 is irradiated to the first antireflection layer 23 and the second antireflection layer 24, and the first antireflection layer 23 and the second antireflection layer are irradiated. The layer 24 is processed according to the shape of the photomask 25.
In FIG. 1G, the first antireflection layer 23 and the second antireflection layer 24 are irradiated with the first laser light L1 from the other main surface side of the transparent substrate 20. You may irradiate from the main surface side.

The first laser beam L1 is an excimer laser beam, a YAG laser beam, or the like, and is a third laser beam (for example, a wavelength of 500 to 1500 nm and an energy density of 0.1 J / cm ² or more used for peeling a mask layer described later). The energy density is higher than that of a laser beam of 1 J / cm ^{2 or} less. For example, the wavelength is 500 to 1500 nm, and the energy density is preferably 1 J / cm ² or more and less than ² J / cm ² . By setting the energy density of the laser light within the above range, the opening can be formed without affecting the transparent layer 21. The energy density is the total energy density of the irradiated pulses when the number of laser pulses is plural, and so on.

  The pattern width of the antireflection layer 27 is determined by the shape (width) of the photomask 25 used in the antireflection layer opening forming step. Therefore, the pattern width is preferably determined in consideration of the balance between the target contrast and luminance. If the pattern width is too thick, when used as a PDP, the light itself emitted from the PDP is blocked, so that the video displayed on the PDP cannot secure sufficient luminance.

<Mask layer forming step>
In the mask layer forming step, the mask layer 30 is formed on the one main surface side of the transparent substrate 20.

  The mask layer 30 is preferably formed using a material that is photopolymerized and cured by irradiation (exposure) of ultraviolet rays UV to be described later, and the cured product does not dissolve in the developer, for example, an ultraviolet curable resin. Further, it is preferable that laser ablation is caused by irradiation with a third laser beam L3, which will be described later, and can be easily peeled off from the transparent substrate 20.

  As a material used for such a mask layer 30 (hereinafter also referred to as “mask layer forming material”), an organic material is preferable. By forming the mask layer 30 using an organic material, the mask layer 30 can be sufficiently peeled even when irradiated with the third laser light L3 having a low energy density.

Examples of such an organic material include an epoxy resin, a polyethylene resin, a polyimide resin, a polyester resin, a tetrafluoroethylene resin, and an acrylic resin.
By using such an organic material, in the peeling step described below, the wavelength is 500 to 1500 nm, the energy density by the third laser light L3 is less than 0.1 J / cm ² or more 1 J / cm ^2, the first antireflection The mask layer 30 can be reliably peeled from the transparent substrate 20 without damaging the layer 23, the second antireflection layer 24, the thin film layer 28, and the like.

  By the way, in order to surely peel the mask layer 30 from the transparent substrate 20 in a peeling step to be described later, it is preferable to cause laser ablation in the mask layer 30. For this purpose, the mask layer 30 has sufficient laser light. It is preferable to absorb it.

The thickness of the mask layer 30 is preferably 6 to 25 μm, more preferably 7 to 15 μm, and even more preferably 7 to 10 μm.
Such a mask layer 30 can be formed by a commonly used method, for example, a method in which a mask layer forming material is applied to the one main surface side of the transparent substrate 20 using a coater or the like. For this purpose, a method in which a film-like mask layer forming material is attached to the surface of the transparent substrate 20 using a film laminator or the like is preferable.

  In order for the mask layer 30 to sufficiently absorb the laser light, the mask layer 30 may contain a pigment or dye as the first method, or the second method may include the mask layer 30 as shown in FIG. It is preferable to form the light absorption thin film 31 formed between the transparent substrate 20 using the organic material containing a pigment or dye.

As a first method, by containing a pigment or dye in the mask layer 30, the absorptance with respect to the third laser light L3 as will be described later increases, so that laser ablation is likely to occur, and the mask from the transparent substrate 20 is removed. The layer 30 can be easily peeled off. The pigment contained in the mask layer 30 and the light absorbing thin film 31 is preferably a black pigment in terms of absorbency, and the dye is preferably a black dye.
Further, even if the mask layer 30 is irradiated with the third laser light L3 having a low energy density (for example, about 0.1 J / cm ² or more and less than 1 J / cm ² ), laser ablation occurs, and the mask layer 30 is removed from the transparent substrate 20. Easy to peel off.

When the mask layer 30 contains a black pigment or black dye, the content is preferably 10 to 95% by mass, more preferably 20 to 90% by mass from the viewpoint of absorbability and function as a mask. preferable.
If the mask layer 30 is formed of a material containing a black pigment or a black dye in such a range, laser ablation is likely to occur, so that peeling from the transparent substrate 20 is facilitated.

As a second method, as shown in FIG. 4, the light absorption thin film 31 is efficiently absorbed by forming the light absorption thin film 31 between the mask layer 30 and the transparent substrate 20. In the mask layer 30, the absorption of the laser beam at the interface with the light absorbing thin film 31 increases, and laser ablation is likely to occur. Therefore, the mask layer 30 is easily peeled from the transparent substrate 20.
Further, even when the third laser light L3 having a low energy density (for example, about 0.1 to 0.5 J / cm ² ) is irradiated, laser ablation occurs, and the mask layer 30 is easily peeled off from the transparent substrate 20. The light absorbing thin film 31 itself is also peeled off from the transparent substrate 20 by laser ablation.

The content of the black pigment or black dye in the light-absorbing thin film 31 is preferably 30 to 95% by mass and more preferably 50 to 90% by mass in terms of absorbability.
If the light absorption thin film 31 is formed of a material containing a black pigment or black dye in such a range, the mask layer 30 increases the absorption of laser light at the interface with the light absorption thin film 31. Accordingly, the mask layer 30 is likely to be laser ablated at the interface with the light absorbing thin film 31, so that the mask layer 30 can be easily peeled off from the transparent substrate 20.

  Moreover, it is preferable that the thickness of the light absorption thin film 31 is 0.5-3 micrometers, and it is more preferable that it is 1-1.5 micrometers. With such a thickness, the ultraviolet ray UV passes through the light-absorbing thin film 31, and thus the mask layer 30 is sufficiently cured in a mask layer opening forming step to be described later.

  The black pigment or black dye contained in the mask layer 30 and the light absorption thin film 31 is not particularly limited as long as it is a compound that increases the absorption rate of the mask layer 30 with respect to the first laser light L1, and specific examples thereof include carbon black. Preferable examples include titanium black, bismuth sulfide, iron oxide, azo acid dyes (for example, CI Modern Black 17), dispersion dyes, and cationic dyes. Among these, carbon black and titanium black are more preferable because they have a high absorptance for all laser beams.

The use of materials containing such a black pigment or black dye is used as a mask layer forming material, in the peeling step described below, the wavelength is 500 to 1500 nm, the energy density of 0.1 J / cm ² or more 1 J / cm of less than ² Without damaging the first antireflection layer 23, the second antireflection layer 24, the thin film layer 28, etc. that remain on the transparent substrate 20 by simply irradiating the third laser beam L3, which is The mask layer 30 can be reliably peeled from the transparent substrate 20.

Moreover, if the organic material containing such a black pigment or black dye is used as a mask layer forming material, the energy density is as low as 500 to 1500 nm and the energy density is 0.1 to 0.5 J / cm ^2. Even if it has the 3rd laser beam L3 which has, there exists the same effect.

<Mask layer opening forming step>
In the mask layer opening forming step, the mask layer 30 is exposed by irradiating ultraviolet rays UV from the other main surface side of the transparent substrate 20, and then developed to form an opening. Since the first antireflection layer 23 and the second antireflection layer 24 do not transmit ultraviolet UV, the mask layer 30 formed on the second antireflection layer 24 is not photopolymerized and cured by exposure. Accordingly, an opening is formed in the mask layer 30 on the second antireflection layer 24 by development after exposure.

<Thin film layer forming step>
In the thin film layer forming step, the thin film layer 28 is formed on the one main surface side of the transparent substrate 20.

  The thin film layer forming material for forming the thin film layer 28 is not particularly limited as long as it functions as an electrode. For example, Cu, Ag, Al, Au or the like is preferably used, and Cu is particularly preferably used. The thin film layer 28 is preferably composed mainly of Cu from the viewpoint of high conductivity and low cost as a material. Specifically, the thin film layer 28 preferably contains 85% by mass or more of Cu.

  The thin film layer 28 using such a thin film layer forming material is formed by a normal sputtering method or vapor deposition method, similarly to the transparent layer 21. The thickness of the thin film layer 28 is preferably 1 to 4 [mu] m, particularly 2 to 4 [mu] m from the viewpoint of patterning properties. When the thickness is in the above range, even when the pattern formed in the present invention is used for PDP, the conductivity can be improved, which is preferable. Further, the thickness of the thin film layer 28 can be adjusted by controlling the film formation time such as the sputtering method or the vapor deposition method, as in the transparent layer 21.

  When the thin film layer 28 and the antireflection layer 27 are used as an electrode for a plasma display substrate and / or a black stripe for a plasma display, the thin film layer 28 and the antireflection layer 27 may be covered with a dielectric. The resistance to the dielectric of the electrode and / or black stripe of the present invention is preferable because it is further improved by the following two methods.

  As shown in FIG. 5, the first method is to include a protective layer forming step of forming a protective layer 34 on the upper surface of the thin film layer 28 after the thin film layer forming step. The protective layer 34 preferably contains Cr and / or Ti as a main component, and specifically, preferably contains 95 mass% or more of Cr and / or Ti. This method is preferable because the dielectric does not directly contact the thin film layer 28 and the thin film layer 28 is less likely to be eroded.

  The protective layer 34 is formed by a sputtering method or a vapor deposition method in the same manner as the transparent layer 21. The thickness of the protective layer 34 is preferably 0.05 to 0.2 μm. With this thickness, the thin film layer 28 can be prevented or suppressed from being eroded by the dielectric. Similar to the transparent layer 21, the thickness of the protective layer 34 can be adjusted by controlling a film formation time such as a sputtering method or a vapor deposition method.

The second method is a method in which the thin film layer 28 contains Cr and / or Ti. This is because Cr and Ti have high resistance to dielectrics. Specifically, the thin film layer 28 includes a layer containing Cr and / or Ti and Cu.
When Cr and / or Ti is contained in an amount of 5 to 15% by mass with respect to the entire material constituting the thin film layer 28, the thin film layer 28 has sufficient resistance to the dielectric and keeps conductivity. This is preferable.
The thin film layer 28 containing Cr and / or Ti is formed by sputtering or vapor deposition using the thin film layer forming material containing Cr and / or Ti.

<Peeling process>
In the peeling process, the mask layer 30 is irradiated with the third laser light L3 to peel off the mask layer 30 from the transparent substrate 20. When the mask layer 30 is irradiated with the third laser light L3, the mask layer 30 evaporates due to the combined use of ablation and thermal energy. As a result, the mask layer 30 is peeled from the transparent substrate 20.

As the type of the third laser light L3, excimer laser light, YAG laser light, or the like can be used as in the above-described antireflection layer opening forming step.
The third laser light L3 is the wavelength is 500 to 1500 nm, it is preferable that the energy density is less than 0.1 J / cm ² or more 1 J / cm ^2. If the wavelength and energy density of the third laser beam L3 are within the above ranges, the first antireflection layer 23, the second antireflection layer 24, the thin film layer 28, etc. that remain on the transparent substrate 20 are not damaged. The mask layer 30 can be reliably peeled from the transparent substrate 20.

In addition, as shown in FIG. 3M, when the thin film layer 28 is formed on the mask layer 30, the third laser light L3 is irradiated from the other main surface side of the transparent substrate 20. However, the mask layer 30 can be peeled from the transparent substrate 20 more reliably and with less residue as compared with the case where the third laser beam L3 is irradiated from the one main surface side of the transparent substrate 20. Therefore, it is preferable to irradiate the third laser beam L3 from the other main surface side of the transparent substrate 20.
By the method described above, a pattern in which the transparent layer / antireflection layer / thin film layer is patterned in order from the transparent substrate can be formed. In consideration of the order of patterning, the energy density of each laser is preferably in the order of second laser beam> first laser beam> third laser beam. Moreover, it is preferable that the energy density of each laser beam has a difference of 0.8 J / cm ² or more from each other in consideration of patterning accuracy.

<Adhesive strength reduction process>
In order to reduce or eliminate the adhesion between the mask layer 30 and the transparent substrate 20 immediately before the peeling step (hereinafter, these are collectively referred to as “decrease adhesion”), these are irradiated with light. There may be provided a step of reducing the adhesiveness (hereinafter referred to as “adhesive strength reduction step”).

  After forming the thin film layer 28 on the mask layer 30, the mask layer 30 is irradiated with light from the other main surface side of the transparent substrate 20. The light applied to the mask layer 30 is preferably ultraviolet light. Thereby, the mask layer forming material is decomposed and deteriorated. As a result, the adhesion between the mask layer 30 and the transparent substrate 20 is reduced. Therefore, in this case, as the mask layer forming material, it is preferable to use a material containing a component that is decomposed or deteriorated by light irradiation.

  Furthermore, when the types of mask layer forming materials are different, irradiation may be performed using light having a wavelength corresponding to each mask layer forming material. Thereby, while making it easy to peel the mask layer 30 from the transparent substrate 20, the residue after peeling can be reduced.

  In addition to the first antireflection layer 23, the second antireflection layer 24, and the thin film layer 28, one or more other thin film layers may be formed. For example, before the formation of the first antireflection layer 23, between the formation of the first antireflection layer 23 and the formation of the second antireflection layer 24, after the formation of the second antireflection layer 24, and the formation of the mask layer 30. Another thin film layer may be formed before or after the mask layer 30 is peeled off.

  Moreover, this invention may add the process of changing the order of each process in the said suitable Example suitably, or forming another thin film, for example.

By the pattern forming method of the present invention, a pattern having a first antireflection layer, a second antireflection layer, a thin film layer, and a transparent layer can be formed on one main surface side of the transparent substrate. Particularly preferably, the first antireflection layer made of chromium oxide and / or titanium oxide, the second antireflection layer made of metal chromium and / or metal titanium, the thin film layer made of metal copper, and SnO _2. A pattern having a transparent layer can be formed. In addition, in FIGS. 1-5, although the transparent layer was demonstrated about the case where it forms between a transparent substrate and a 1st antireflection layer, a transparent layer is formed in the back | latter stage of an antireflection layer opening part formation process. Thus, it may be formed between the second antireflection layer and the thin film layer (FIG. 6A), or may be formed on the one main surface side of the thin film layer by forming it after the peeling step. Good (FIG. 6B). The “pattern having the first antireflection layer, the second antireflection layer, the thin film layer, and the transparent layer” includes configurations corresponding to FIGS. 6A and 6B.

As shown in FIG. 6A, the transparent layer 21 may be formed between the antireflection layer 27 and the thin film layer 28. In this case, a pattern in which the antireflection layer / transparent layer / thin film layer is patterned in order from the transparent substrate can be formed. In particular, when SnO ₂ is used as the material of the transparent layer 21, the transparent layer 21 is formed between the antireflection layer 27 and the thin film layer 28, so that the antireflection layer 27 is protected by the transparent layer 21. It is preferable because it is less likely to be eroded by the dielectric.

Further, as shown in FIG. 6B, the transparent layer 21 may be formed on the one main surface side of the thin film layer 28. In this case, a pattern in which the antireflection layer / thin film layer / transparent layer is patterned in order from the transparent substrate can be formed. In particular, when SnO ₂ which is a material of the transparent electrode is used as the material of the transparent layer 21, the transparent layer 21 is formed on the laminate of the antireflection layer 27 and the thin film layer 28. The laminated body of 27 and the thin film layer 28 is preferably protected by the transparent layer 21 and hardly eroded by the dielectric. Also, since the antireflection layer / thin film layer is formed in this order, it is preferable because the reflection characteristics become better. Moreover, when using the pattern of this invention as PDP, it is preferable at the point which can take the conduction | electrical_connection of a thin film layer and a transparent layer effectively. Further, when the antireflection layer is patterned by forming the transparent layer after forming the thin film layer, the transparent layer does not exist. Therefore, the energy density of the first laser beam L1 is compared with the case of FIG. Can be high. Specifically, the first laser beam L1 is an excimer laser beam, a YAG laser beam, or the like, and preferably has a wavelength of 500 to 1500 nm and an energy density of 1 to 40 J / cm ² . Note that the wavelength and energy density as described above can be used for the second laser beam L2 and the third laser beam L3.
6A and 6B, when the opening is formed in the transparent layer 21 by irradiation with the second laser beam L2, the antireflection layer 27 or the laminate of the antireflection layer 27 and the thin film layer 28 is Since it is covered with the photomask, the opening can be formed in the transparent layer 21 without damaging them.

In the present invention, since the thin film is not processed by wet etching using a resist film, the electrodes and / or black stripes for the plasma display substrate can be formed at a lower cost with a smaller number of forming steps.
In addition, since an etching agent exhibiting strong acidity or strong alkalinity is not used, there is no need to perform complicated operations required by handling the etching agent, and it is necessary for forming electrodes and / or black stripes for plasma display substrates. This reduces the number of processes.
Moreover, in this invention, the electronic circuit provided with the pattern formed by the said pattern formation method, and the electronic device using the said electronic circuit can be formed. Examples of the electronic circuit include a substrate with an electrode for LCD, a substrate with an electrode for organic EL, an electrode for a plasma display substrate and / or a substrate with a black stripe, and the electronic device includes an LCD, an organic EL, PDP etc. are illustrated. When used as a PDP, the front substrate and the back substrate are preferably used as the front substrate.
In addition, the plasma display substrate can be formed by using the pattern formed by the pattern forming method of the present invention as an electrode and / or a black stripe for the plasma display substrate. Here, the electrodes mean display electrodes and bus electrodes in the plasma display substrate. In this method, when the electrode and the black stripe are provided on the plasma display substrate, the black stripe and the electrode can be formed at the same time, so that the process can be shortened. In the case of PDP, the transparent layer serves as a display electrode, and the thin film layer serves as a bus electrode.

  Next, the electrodes for the plasma display substrate and / or black provided with the black stripes 42, the bus electrodes 41, and the display electrodes 43 formed by the pattern forming method described above with reference to FIGS. 7 and 8. The stripe will be described. FIG. 8 is a cross-sectional view taken along line A-A ′ of FIG.

  As shown in FIG. 8, the black stripe 42 is formed of a first antireflection layer 23, a second antireflection layer 24, and a thin film layer 28 that are sequentially formed on the upper surface of the transparent substrate 20. By providing the first antireflection layer 23 and the second antireflection layer 24, reflection of visible light incident from the other main surface side of the transparent substrate 20 is prevented.

  The display electrode 43 is formed from the transparent layer 21. When the electrode and / or the black stripe is mounted on the PDP, current flows through the display electrode 43, and the plasma sealed at the corresponding position is discharged.

The bus electrode 41 is formed of a transparent layer 21, a first antireflection layer 23, a second antireflection layer 24, and a thin film layer 28 that are sequentially formed on the upper surface of the transparent substrate 20. The bus electrode 41 supplies current to the display electrode 43 and reduces the resistance value of the display electrode 43.
In addition, since the bus electrode 41 includes the first antireflection layer 23 and the second antireflection layer 24, the reflection of visible light incident from the other main surface side of the transparent substrate 20 is prevented in the same manner as the black stripe 42. Is done. In addition, a clear image can be displayed on the PDP of the present invention.

  In the electrode and / or the black stripe portion, the reflectance of visible light incident from the other main surface side of the transparent substrate 20 (as defined in JIS-R3106 (1998)) is preferably 50% or less, and 40% or less. More preferably, it is more preferably 10% or less. If the reflectance is 50% or less, a clearer image is formed on the PDP.

  In addition, the plasma display back substrate provided with an address electrode can also be formed with the pattern formation method of this invention. Furthermore, a PDP can also be formed using this plasma display back substrate.

EXAMPLES Hereinafter, although this invention is demonstrated more concretely based on an Example, this invention is not limited to these.
A method for forming electrodes and / or black stripes for a plasma display substrate according to the embodiment will be described with reference to FIGS.

In this example, SnO ₂ containing 5% by mass of Sb is used as a target for forming a transparent layer, and a film made of an acrylic resin containing 40% by mass of carbon black as a material for forming a mask layer (hereinafter simply referred to as “mask”). A metal Cr target (purity: 99.99% or more) as a material for forming the first antireflection layer, and a metal Cr target (purity: 99) as the material for forming the second antireflection layer. 99% or more), and a metal Cu target (purity: 99.99% or more) is used as the thin film layer forming material.

  As shown in FIGS. 9 to 12, the method for forming electrodes and / or black stripes for the plasma display substrate according to the embodiment includes (1) a transparent layer forming step (FIG. 9A) and (2) a transparent layer. Opening formation step (FIG. 9B), (3) Antireflection layer formation step (FIGS. 10C and 10D), (4) Antireflection layer opening formation step (FIG. 10E), (5) Mask film attaching step (FIG. 11 (F)), (6) Mask layer opening forming step by ultraviolet irradiation / development (FIG. 11 (G) / (H)), (7) Thin film layer forming step (FIG. 12 (I)), (8) Protective layer forming step (FIG. 12 (J)), (9) Mask layer peeling step by laser light irradiation (FIG. 12 (K)).

Specifically, first, the glass substrate 70 is mounted on the sputter film forming apparatus 80, and by performing sputter film formation using SnO ₂ containing 5% by mass of Sb, a transparent surface is formed on one main surface side of the glass substrate 70. A layer 81 is formed (FIG. 9A). The thickness of the transparent layer 81 is 0.2 μm.

Next, as the second laser beam, a YAG laser beam having a wavelength of 1064 nm and an energy density of 2.5 J / cm ² is irradiated from the other main surface side of the glass substrate 70 to the transparent layer 81 through the photomask 82. Then, an opening is formed in the transparent layer 81 (FIG. 9B).

Next, by using the same sputter deposition apparatus 80 and performing sputter deposition using a metal Cr target in a mixed gas of Ar and O ₂ , CrO having an extinction coefficient of 0.3 is formed on the transparent layer 81. _A first antireflection layer 83 composed of _1.3 layers is formed (FIG. 10C), and further, sputter film formation is performed using a metal Cr target in Ar gas, whereby the first antireflection layer 83 is formed. The antireflection layer 85 is formed by forming the second antireflection layer 84 made of a Cr layer having a visible light transmittance of 0.05% (FIG. 10D). The thickness of the first antireflection layer 83 is about 50 nm, and the thickness of the second antireflection layer 84 is 80 nm.

Next, as the first laser beam, a YAG laser beam having a wavelength of 1064 nm and an energy density of 1.2 J / cm ² is applied to the antireflection layer 85 through the photomask 86 from the other main surface side of the glass substrate 70. Then, an opening is formed in the antireflection layer 85 (FIG. 10E).

Next, a 10 μm-thick mask film 88 is uniformly attached to the one main surface side of the glass substrate 70 with a film laminator 90 (FIG. 11F). Then, the mask film 88 is irradiated with ultraviolet rays from the other main surface side of the glass substrate 70 using the ultraviolet curing device 92 (FIG. 11G).
Next, after developing and removing the mask film 88 formed on the second antireflection layer 84 (FIG. 11 (H)), the glass substrate 70 is put in the sputter deposition apparatus 80 again, and the second antireflection is performed. A thin film layer 94 made of Cu is formed on the layer 84 and the mask film 88 by performing sputter deposition using a metal Cu target in Ar gas (FIG. 12I). The thickness of the thin film layer 94 is 3 μm.

  Next, a protective layer 95 made of Cr is formed on the thin film layer 94 by sputtering using a metal Cr target in Ar gas (FIG. 12J). The thickness of the protective layer 95 is 10 nm.

As a laser beam, a YAG laser beam having a wavelength of 1064 nm and an energy density of 0.25 J / cm ² is applied to the mask film 88 from the other main surface side of the glass substrate 70, and the mask film 88 is peeled off from the glass substrate 70. (FIG. 12 (K)).

  Through the above steps, a plasma display substrate having electrodes and / or black stripes similar to those shown in FIGS. 7 and 8 can be formed. The formed plasma display substrate is useful as a PDP.

Although the present invention has been described in detail and with reference to specific embodiments, it will be apparent to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the invention.
This application is based on Japanese Patent Application No. 2004-376174 filed on Dec. 27, 2004, the contents of which are incorporated herein by reference.

  According to the present invention, since wet etching is not performed, a pattern having a transparent layer and a thin film layer can be formed on a transparent substrate with fewer steps than in the past. Therefore, according to the present invention, a pattern having a transparent layer and a thin film layer can be efficiently formed on a transparent substrate at a low cost. Further, an electronic circuit including a transparent substrate on which a pattern having a transparent layer and a thin film layer is formed can be efficiently formed at low cost.

Claims (18)

An antireflection layer forming step of forming an antireflection layer on one main surface side of the transparent substrate;
An antireflection layer opening forming step of forming an opening by irradiating the antireflection layer with a first laser beam;
After the antireflection layer opening forming step, a mask layer forming step of forming a mask layer on the one main surface side of the transparent substrate,
A mask layer opening forming step of forming an opening in the mask layer;
A thin film layer forming step of forming a thin film layer having a thickness of 1 to 4 μm on the one main surface side of the transparent substrate after the mask layer opening forming step;
After the thin film layer forming step, a peeling step of irradiating the mask layer with a third laser beam from the other main surface side of the transparent substrate to peel the mask layer from the transparent substrate,
A transparent layer forming step of forming a transparent layer on the one main surface side of the transparent substrate, in a previous stage of the antireflection layer forming step, a subsequent stage of the antireflection layer opening forming step or a subsequent stage of the peeling step;
A pattern forming method comprising: a transparent layer opening forming step of forming an opening by irradiating the transparent layer with a second laser beam after the transparent layer forming step. The mask layer forming step includes
An ultraviolet curable resin application step of applying an ultraviolet curable resin to the one principal surface side of the transparent substrate;
The pattern formation method of Claim 1 provided with the ultraviolet resin curing process of irradiating an ultraviolet-ray with respect to the said ultraviolet curable resin from the other main surface side of the said transparent substrate, and hardening | curing the said ultraviolet curable resin. It said third laser beam, wavelength of 500 to 1500 nm, the energy density is less than 0.1 J / cm ² or more 1 J / cm ^2, the pattern forming method according to claim 1 or 2. The antireflection layer includes a first anti-reflection layer containing chromium oxide and / or titanium oxide, and a second anti-reflection layer containing chromium metal and / or metallic titanium, according to claim 1 to 3 The pattern formation method in any one. The mask layer is formed using an organic material, a pattern forming method according to any one of claims 1-4. The said mask layer is a pattern formation method in any one of Claims 1-5 containing a black pigment and / or a black dye. Wherein the first laser light, wavelength of 500 to 1500 nm, the energy density is less than 1 J / cm ² or more 2J / cm ^2, the pattern forming method according to any one of claims 1-6. In the mask layer opening forming step, the mask layer is irradiated with ultraviolet rays from the other main surface side of the transparent substrate using the antireflection layer as a mask, and thereafter development is performed to form the opening. The pattern formation method in any one. The pattern forming method according to claim 1, wherein the second laser beam has a wavelength of 500 to 1500 nm and an energy density of ² to 40 J / cm ² .   The said thin film layer is a pattern formation method in any one of Claims 1-9 containing metal chromium and / or metal titanium, and metal copper.   The pattern formation method in any one of Claims 1-10 provided with the protective layer formation process which forms a protective layer in the back | latter stage of the said thin film layer formation process.   The pattern forming method according to claim 1, wherein the transparent layer has a thickness of 0.1 to 3 μm.   The pattern forming method according to claim 1, wherein the mask layer has a thickness of 6 to 25 μm. The pattern formation method of Claim 6 which contains 30-95 mass% of the said black pigment and / or the said black dye in the said mask layer. An antireflection layer forming step of forming an antireflection layer on one main surface side of the transparent substrate;
An antireflection layer opening forming step of forming an opening by irradiating the antireflection layer with a first laser beam;
After the antireflection layer opening forming step, a mask layer forming step of forming a mask layer on the one main surface side of the transparent substrate,
A mask layer opening forming step of forming an opening in the mask layer;
A thin film layer forming step of forming a thin film layer having a thickness of 1 to 4 μm on the one main surface side of the transparent substrate after the mask layer opening forming step;
After the thin film layer forming step, a peeling step of irradiating the mask layer with a third laser beam from the other main surface side of the transparent substrate to peel the mask layer from the transparent substrate,
A transparent layer forming step of forming a transparent layer on the one main surface side of the transparent substrate after the peeling step;
A pattern forming method comprising: a transparent layer opening forming step of forming an opening by irradiating the transparent layer with a second laser beam after the transparent layer forming step.   An electronic circuit provided with the pattern formed by the pattern formation method in any one of Claims 1-15.   An electronic device comprising the electronic circuit according to claim 16.   The formation method of a plasma display board | substrate including the process of forming a pattern with the pattern formation method in any one of Claims 1-15.

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