JP4313401B2 - 縦型熱処理装置及び被処理基板移載方法 - Google Patents
縦型熱処理装置及び被処理基板移載方法 Download PDFInfo
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- JP4313401B2 JP4313401B2 JP2007114181A JP2007114181A JP4313401B2 JP 4313401 B2 JP4313401 B2 JP 4313401B2 JP 2007114181 A JP2007114181 A JP 2007114181A JP 2007114181 A JP2007114181 A JP 2007114181A JP 4313401 B2 JP4313401 B2 JP 4313401B2
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- 238000012546 transfer Methods 0.000 title claims description 145
- 239000000758 substrate Substances 0.000 title claims description 58
- 238000010438 heat treatment Methods 0.000 title claims description 45
- 238000000034 method Methods 0.000 title claims description 12
- 230000007246 mechanism Effects 0.000 claims description 52
- 238000003860 storage Methods 0.000 claims description 38
- 230000002093 peripheral effect Effects 0.000 claims description 20
- 230000003028 elevating effect Effects 0.000 claims description 8
- 238000007789 sealing Methods 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 description 72
- 238000006243 chemical reaction Methods 0.000 description 14
- 238000012545 processing Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 4
- 238000013507 mapping Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Robotics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Description
w 半導体ウエハ(被処理基板)
3 熱処理炉
4 炉口
6 蓋体
9 保持具
11 昇降機構
15 リング状の支持板
16 収納容器
20 移載板
21 移載機構
28 切欠部
30 塞ぎ部
31 内側支持板
38 吸着部
15a 支持板本体
15b 塞ぎ板
Claims (6)
- 下部に炉口を有する熱処理炉と、その炉口を密閉する蓋体と、該蓋体上に設けられ複数枚の被処理基板をリング状の支持板を介して上下方向に所定間隔で保持する保持具と、上記蓋体を昇降させて保持具を熱処理炉に搬入搬出する昇降機構と、複数枚の被処理基板を所定間隔で収納する収納容器と上記保持具との間で被処理基板の移載を行う複数枚の移載板を所定間隔で有する移載機構とを備え、上記支持板は、被処理基板の移載を行う際に上記移載板が上下方向に通過可能な切欠部を有する外側支持板と、該外側支持板の内周縁部に載置される環状部に上記切欠部を塞ぐ塞ぎ部を一体形成してなる内側支持板とに分割されており、上記移載機構が上記移載板上に上記内側支持板を介して上記被処理基板を支持した状態で該被処理基板の移載を行うことを特徴とする縦型熱処理装置。
- 上記収納容器内の両側に上下方向に所定間隔で形成された収納溝に上記被処理基板の周縁部を収納するために、上記外側支持板の内径及び上記内側支持板の環状部の外径が被処理基板の直径よりも小さく形成されていることを特徴とする請求項1記載の縦型熱処理装置。
- 上記移載板の上面には吸引孔が設けられ、上記内側支持板には上記移載板上の吸引孔に連通接続されて被処理基板の裏面を吸着するための吸着部が設けられていることを特徴とする請求項1記載の縦型熱処理装置。
- 下部に炉口を有する熱処理炉と、その炉口を密閉する蓋体と、該蓋体上に設けられ複数枚の被処理基板をリング状の支持板を介して上下方向に所定間隔で保持する保持具と、上記蓋体を昇降させて保持具を熱処理炉に搬入搬出する昇降機構と、複数枚の被処理基板を所定間隔で収納する収納容器と上記保持具との間で被処理基板の移載を行う複数枚の移載板を所定間隔で有する移載機構とを備えた縦型熱処理装置における被処理基板の移載方法であって、上記支持板は、被処理基板の移載を行う際に上記移載板が上下方向に通過可能な切欠部を有する外側支持板と、該外側支持板の内周縁部に載置される環状部に上記切欠部を塞ぐ塞ぎ部を一体形成してなる内側支持板とに分割されており、上記移載機構が上記移載板上に上記内側支持板を介して上記被処理基板を支持した状態で該被処理基板の移載を行うことを特徴とする被処理基板移載方法。
- 上記収納容器内の両側に上下方向に所定間隔で形成された収納溝に上記被処理基板の周縁部を収納するために、上記外側支持板の内径及び上記内側支持板の環状部の外径が被処理基板の直径よりも小さく形成されていることを特徴とする請求項4記載の被処理基板移載方法。
- 上記移載板の上面には吸引孔が設けられ、上記内側支持板には上記移載板上の吸引孔に連通接続されて被処理基板の裏面を吸着するための吸着部が設けられていることを特徴とする請求項4記載の被処理基板移載方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007114181A JP4313401B2 (ja) | 2007-04-24 | 2007-04-24 | 縦型熱処理装置及び被処理基板移載方法 |
TW097114905A TWI409908B (zh) | 2007-04-24 | 2008-04-23 | 垂直型熱處理裝置及待處理基板之移載方法 |
KR1020080037480A KR101383935B1 (ko) | 2007-04-24 | 2008-04-23 | 종형 열처리 장치 및 피처리 기판 이동 탑재 방법 |
US12/081,988 US7981217B2 (en) | 2007-04-24 | 2008-04-24 | Vertical heat treatment apparatus and method of transferring substrates to be processed |
CN2008100923656A CN101295628B (zh) | 2007-04-24 | 2008-04-24 | 立式热处理装置以及被处理基板移载方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007114181A JP4313401B2 (ja) | 2007-04-24 | 2007-04-24 | 縦型熱処理装置及び被処理基板移載方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008270652A JP2008270652A (ja) | 2008-11-06 |
JP4313401B2 true JP4313401B2 (ja) | 2009-08-12 |
Family
ID=39885495
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007114181A Expired - Fee Related JP4313401B2 (ja) | 2007-04-24 | 2007-04-24 | 縦型熱処理装置及び被処理基板移載方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7981217B2 (ja) |
JP (1) | JP4313401B2 (ja) |
KR (1) | KR101383935B1 (ja) |
CN (1) | CN101295628B (ja) |
TW (1) | TWI409908B (ja) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9169554B2 (en) * | 2008-05-30 | 2015-10-27 | Alta Devices, Inc. | Wafer carrier track |
US8042697B2 (en) * | 2008-06-30 | 2011-10-25 | Memc Electronic Materials, Inc. | Low thermal mass semiconductor wafer support |
WO2010041562A1 (ja) * | 2008-10-07 | 2010-04-15 | 川崎重工業株式会社 | 基板搬送ロボットおよびシステム |
US20100098519A1 (en) * | 2008-10-17 | 2010-04-22 | Memc Electronic Materials, Inc. | Support for a semiconductor wafer in a high temperature environment |
JP5324231B2 (ja) * | 2009-01-08 | 2013-10-23 | 日東電工株式会社 | 半導体ウエハのアライメント装置 |
JP5543813B2 (ja) * | 2010-03-23 | 2014-07-09 | 日東電工株式会社 | ワーク搬送方法およびワーク搬送装置 |
JP6095958B2 (ja) * | 2011-12-27 | 2017-03-15 | 新光電気工業株式会社 | 発光装置 |
CN103187347B (zh) * | 2011-12-29 | 2016-10-05 | 中建材浚鑫科技股份有限公司 | 一种卸载电池硅片的方法 |
US9099514B2 (en) | 2012-03-21 | 2015-08-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer holder with tapered region |
KR101990533B1 (ko) * | 2012-11-06 | 2019-09-30 | 주식회사 원익아이피에스 | 배치식 기판처리장치 |
DE102012111167A1 (de) * | 2012-11-20 | 2014-05-22 | Aixtron Se | Vorrichtung zum Ausrichten eines Wafers auf einem Waferträger |
FI125222B (en) * | 2013-03-22 | 2015-07-15 | Beneq Oy | Apparatus for handling two or more substrates in a batch process |
TWI549881B (zh) * | 2014-11-14 | 2016-09-21 | Chung King Entpr Co Ltd | Substrate storage container and its manufacturing method |
KR102425455B1 (ko) | 2015-01-09 | 2022-07-27 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판 이송 메커니즘들 |
KR101718422B1 (ko) | 2015-02-11 | 2017-04-04 | 한국지질자원연구원 | 연속열처리 방식 폐전지 처리장치 및 이를 이용한 리튬계전지로부터 유가금속의 회수방법 |
KR101905822B1 (ko) * | 2017-03-21 | 2018-10-08 | 주식회사 유진테크 | 기판 처리장치 |
JP2019046941A (ja) * | 2017-08-31 | 2019-03-22 | 東芝メモリ株式会社 | 半導体製造装置、ウェハ搬送装置、およびウェハ搬送方法 |
US12233433B2 (en) * | 2018-04-27 | 2025-02-25 | Raytheon Company | Uniform thin film deposition for poly-p-xylylene |
KR20240056777A (ko) * | 2018-09-20 | 2024-04-30 | 가부시키가이샤 코쿠사이 엘렉트릭 | 기판 처리 장치, 반도체 장치의 제조 방법, 프로그램 및 기판 처리 방법 |
JP7245071B2 (ja) * | 2019-02-21 | 2023-03-23 | 株式会社ジェイテクトサーモシステム | 基板支持装置 |
Family Cites Families (15)
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JP2630366B2 (ja) * | 1989-08-28 | 1997-07-16 | 東京エレクトロン株式会社 | 板状体の搬入搬出方法および搬入搬出装置 |
US5162047A (en) * | 1989-08-28 | 1992-11-10 | Tokyo Electron Sagami Limited | Vertical heat treatment apparatus having wafer transfer mechanism and method for transferring wafers |
JP3081025B2 (ja) | 1991-07-03 | 2000-08-28 | 東京エレクトロン株式会社 | ウエハの移載装置 |
US6217663B1 (en) * | 1996-06-21 | 2001-04-17 | Kokusai Electric Co., Ltd. | Substrate processing apparatus and substrate processing method |
JP3265498B2 (ja) * | 1996-08-28 | 2002-03-11 | 東芝セラミックス株式会社 | 半導体ウェーハ用縦型炉 |
JP2000235974A (ja) | 1999-02-12 | 2000-08-29 | Toshiba Microelectronics Corp | 半導体製造装置 |
JP2001044260A (ja) | 1999-08-02 | 2001-02-16 | Tokyo Electron Ltd | 被処理基板搬送装置およびその支持板取外し方法 |
JP2003031647A (ja) * | 2001-07-19 | 2003-01-31 | Hitachi Kokusai Electric Inc | 基板処理装置および半導体装置の製造方法 |
JP3377996B1 (ja) * | 2001-12-27 | 2003-02-17 | 東京エレクトロン株式会社 | 熱処理用ボート及び縦型熱処理装置 |
JP2003338531A (ja) | 2002-05-20 | 2003-11-28 | Toshiba Ceramics Co Ltd | 半導体ウエハの搬送装置および熱処理装置 |
US7181132B2 (en) * | 2003-08-20 | 2007-02-20 | Asm International N.V. | Method and system for loading substrate supports into a substrate holder |
KR100549273B1 (ko) | 2004-01-15 | 2006-02-03 | 주식회사 테라세미콘 | 반도체 제조장치의 기판홀더 |
CN100433285C (zh) * | 2004-03-25 | 2008-11-12 | 东京毅力科创株式会社 | 立式热处理装置和被处理体移送方法 |
JP4266197B2 (ja) * | 2004-10-19 | 2009-05-20 | 東京エレクトロン株式会社 | 縦型熱処理装置 |
JP4642787B2 (ja) * | 2006-05-09 | 2011-03-02 | 東京エレクトロン株式会社 | 基板搬送装置及び縦型熱処理装置 |
-
2007
- 2007-04-24 JP JP2007114181A patent/JP4313401B2/ja not_active Expired - Fee Related
-
2008
- 2008-04-23 KR KR1020080037480A patent/KR101383935B1/ko not_active Expired - Fee Related
- 2008-04-23 TW TW097114905A patent/TWI409908B/zh not_active IP Right Cessation
- 2008-04-24 US US12/081,988 patent/US7981217B2/en not_active Expired - Fee Related
- 2008-04-24 CN CN2008100923656A patent/CN101295628B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2008270652A (ja) | 2008-11-06 |
CN101295628A (zh) | 2008-10-29 |
US7981217B2 (en) | 2011-07-19 |
TW200910510A (en) | 2009-03-01 |
US20080264343A1 (en) | 2008-10-30 |
TWI409908B (zh) | 2013-09-21 |
KR101383935B1 (ko) | 2014-04-10 |
KR20080095781A (ko) | 2008-10-29 |
CN101295628B (zh) | 2013-01-16 |
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