JP4114567B2 - Semiconductor device and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device using a die bonding material which can be excellently wire bonded even under various assembling conditions by standing against the thermal histeresis at wire bonding, when manufacturing a semiconductor device of various states that a semiconductor element is connected to a base material with wiring by a wire bonding system. <P>SOLUTION: The semiconductor device includes a structure that a plurality of semiconductor elements are laminated via an adhesive layer. The semiconductor elements are connected to the base material with wiring by wire bonding. 1.5&lt;(En&times;Sn)/tn&lt;1,000 is provided, wherein Sn (mm<SP>2</SP>) is the area of the semiconductor element of n-th stage, En(MPa) is a tensile elastic modulus at a wire bonding temperature of the adhesive layer of the die bonding material of n-th stage brought into contact with a bottom of the semiconductor element, and tn (&mu;m) is its thickness. A method for manufacturing the same is provided. The die bonding material used for the semiconductor device is provided. <P>COPYRIGHT: (C)2005,JPO&amp;NCIPI

Description

（式中、Ｒ_１及びＲ_２は炭素原子数１〜３０の二価の炭化水素基を示し、それぞれ同一でも異なっていてもよく、Ｒ_３及びＲ_４は一価の炭化水素基を示し、それぞれ同一でも異なっていてもよく、ｍは１以上の整数である）
で表されるジアミノポリシロキサン、１，３−ビス（アミノメチル）シクロヘキサン、サンテクノケミカル（株）製 ジェファーミン Ｄ−２３０，Ｄ−４００，Ｄ−２０００，Ｄ−４０００，ＥＤ−６００，ＥＤ−９００，ＥＤ−２００１，ＥＤＲ−１４８等のポリオキシアルキレンジアミン等の脂肪族ジアミン等を使用することができ、これらの１種または２種以上を併用することもできる。
【００２４】
前記熱硬化性樹脂としては、熱及び／又は放射線によって重合あるいは架橋する樹脂組成物であれば特に制限されるものではないが、エポキシ樹脂が好ましい。エポキシ樹脂は、硬化して接着作用を有するものであれば特に限定されない。ビスフェノールＡ型（又はＡＤ型、Ｓ型、Ｆ型）のグリシジルエーテル、水添加ビスフェノールＡ型のグリシジルエーテル、エチレンオキシド付加体ビスフェノールＡ型のグリシジルエーテル、プロピレンオキシド付加体ビスフェノールＡ型のグリシジルエーテルなどの二官能エポキシ樹脂、フェノールノボラック型グリシジルエーテルやクレゾールノボラック型グリシジルエーテルなどのノボラック型エポキシ樹脂、３官能型（又は４官能型）のグリシジルエーテル等の多官能エポキシ樹脂、ジシクロペンタジエンフェノール樹脂のグリシジルエーテル等の脂環式エポキシ樹脂、ダイマー酸のグリシジルエステル、３官能型（又は４官能型）のグリシジルアミン等のグリシジルアミン型エポキシ樹脂等、ナフタレン樹脂、複素環含有エポキシ樹脂等、一般に知られているものを適用することができる。
【００２５】
このようなエポキシ樹脂として、ビスフェノールＡ型エポキシ樹脂としては、油化シェルエポキシ（株）製 エピコート８０７，８１５，８２５，８２７，８２８，８３４，１００１，１００４，１００７，１００９、ダウケミカル社製 ＤＥＲ−３３０，３０１，３６１、東都化成（株）製 ＹＤ８１２５，ＹＤＦ８１７０などが挙げられる。フェノールノボラック型エポキシ樹脂としては、油化シェルエポキシ（株）製 エピコート１５２，１５４、日本化薬（株）製 ＥＰＰＮ−２０１、ダウケミカル社製 ＤＥＮ−４３８などが、また、ｏ−クレゾールノボラック型エポキシ樹脂としては、日本化薬（株）製 ＥＯＣＮ−１０２Ｓ，１０３Ｓ，１０４Ｓ，１０１２，１０２５，１０２７、東都化成（株）製 ＹＤＣＮ７０１，７０２，７０３，７０４などが挙げられる。多官能エポキシ樹脂としては、油化シェルエポキシ（株）製 Ｅｐｏｎ １０３１Ｓ、チバスペシャリティーケミカルズ社製 アラルダイト０１６３、ナガセ化成（株）製 デナコールＥＸ−６１１，６１４，６１４Ｂ，６２２，５１２，５２１，４２１，４１１，３２１などが挙げられる。アミン型エポキシ樹脂としては、油化シェルエポキシ（株）製 エピコート６０４、東都化成（株）製 ＹＨ−４３４、三菱ガス化学（株）製 ＴＥＴＲＡＤ−Ｘ，ＴＥＴＲＡＤ−Ｃ、住友化学工業（株）製 ＥＬＭ−１２０などが挙げられる。複素環含有エポキシ樹脂としては、チバスペシャリティーケミカルズ社製 アラルダイトＰＴ８１０等の、ＵＣＣ社製 ＥＲＬ４２３４，４２９９，４２２１，４２０６などが挙げられる。これらのエポキシ樹脂は、単独でまたは２種類以上を組み合わせても、使用することができる。
【００２６】
上記エポキシ樹脂の硬化剤としては、通常用いられている公知の硬化剤を使用することができる。たとえば、脂肪族アミン、脂環族アミン、芳香族ポリアミン等のアミン類、ポリアミド、脂肪族酸無水物、脂環族酸無水物、芳香族酸無水物等の酸無水物、ポリスルフィド、三フッ化ホウ素、ビスフェノールＡ、ビスフェノールＦ，ビスフェノールＳのようなフェノール性水酸基を１分子中に２個以上有するビスフェノール類、フェノールノボラック樹脂、ビスフェノールＡノボラック樹脂またはクレゾールノボラック樹脂などのフェノール系化合物、ジシアンジアミド、有機酸ジヒドラジド、三フッ化ホウ素アミン錯体、イミダゾール類、第３級アミン等が挙げられる。特に吸湿時の耐電食性に優れる点で、フェノールノボラック樹脂、ビスフェノールＡノボラック樹脂またはクレゾールノボラック樹脂などのフェノール系化合物が好ましい。
【００２７】
好ましいフェノール系化合物としては、フェノールノボラック樹脂、クレゾールノボラック樹脂、ｔ−ブチルフェノールノボラック樹脂、ジシクロペンタジェンクレゾールノボラック樹脂、ジシクロペンタジェンフェノールノボラック樹脂、キシリレン変性フェノールノボラック樹脂、ナフトールノボラック樹脂、トリスフェノールノボラック樹脂、テトラキスフェノールノボラック樹脂、ビスフェノールＡノボラック樹脂、ポリ−ｐ−ビニルフェノール樹脂、フェノールアラルキル樹脂等が挙げられ、たとえば、大日本インキ化学工業（株）製、商品名：フェノライトＬＦ２８８２、フェノライトＬＦ２８２２、フェノライトＴＤ−２０９０、フェノライトＴＤ−２１４９、フェノライトＶＨ−４１５０、フェノライトＶＨ４１７０、本州化学（株）製TrisP-PAなどが挙げられる。
【００２８】
本発明で使用する放射線照射によって塩基を発生する化合物は、放射線照射時に塩基を発生する化合物であれば特に制限は受けない。発生する塩基としては、反応性、硬化速度の点から強塩基性化合物が好ましい。一般的には、塩基性の指標として酸解離定数の対数であるｐＫａ値が使用され、水溶液中でのｐＫａ値が７以上の塩基が好ましく、さらに９以上の塩基がより好ましい。
【００２９】
塩基性化合物を放射線照射によって発生するものとしては、例えば、Ｊｏｕｒｎａｌ ｏｆ Ｐｈｏｔｏｐｏｌｙｍｅｒ Ｓｃｉｅｎｃｅ ａｎｄ Ｔｅｃｈｎｏｌｏｇｙ １２巻、３１３〜３１４頁（１９９９年）やＣｈｅｍｉｓｔｒｙｏｆ Ｍａｔｅｒｉａｌｓ １１巻、１７０〜１７６頁（１９９９年）等に記載されている４級アンモニウム塩誘導体を用いることができる。これらは、活性光線の照射により高塩基性のトリアルキルアミンを生成するため、エポキシ樹脂の硬化には最適である。また、Ｊｏｕｒｎａｌ ｏｆ Ａｍｅｒｉｃａｎ Ｃｈｅｍｉｃａｌ Ｓｏｃｉｅｔｙ １１８巻 １２９２５頁（１９９６年）やＰｏｌｙｍｅｒ Ｊｏｕｒｎａｌ ２８巻 ７９５頁（１９９６年）等に記載されているカルバミン酸誘導体を用いることができる。
【００３０】
また、放射線の照射により１級のアミノ基を発生するオキシム誘導体、光ラジカル発生剤として市販されている２−メチル−１−（４−（メチルチオ）フェニル）−２−モルフォリノプロパン−１−オン（Ｃｉｂａ ＳｐｅｃｉａｌｉｔｙＣｈｅｍｉｃａｌｓ社製イルガキュア９０７）、２−ベンジル−２−ジメチルアミノ−１−（４−モルフォリノフェニル）−ブタノン−１−オン（Ｃｉｂａ Ｓｐｅｃｉａｌｉｔｙ Ｃｈｅｍｉｃａｌｓ社製イルガキュア３６９）、ヘキサアリールビスイミダゾール誘導体（ハロゲン、アルコキシ基、ニトロ基、シアノ基等の置換基がフェニル基に置換されていてもよい）、ベンゾイソオキサゾロン誘導体等を用いることができる。
【００３１】
放射線照射による塩基発生剤の他に、光フリース転位、光クライゼン転位（光Ｃｌｅｉｓｅｎ転位）やクルチウス転位（Ｃｕｒｔｉｕｓ転位）、スチーブンス転位（Ｓｔｅｖｅｎｓ転位）によって塩基性化合物を発生させ、エポキシ樹脂の硬化を行うことができる。前記塩基発生剤は、分子量５００以下の低分子化合物として用いる他、高分子の主鎖及び側鎖に導入した化合物を用いても良い。この場合の分子量としては、粘接着剤としての粘接着性、流動性の観点から重量平均分子量１，０００〜１００，０００が好ましく、より好ましくは５，０００〜３０，０００である。これらの化合物は、室温(２５℃)で放射線を照射しない状態ではエポキシ樹脂と反応性を示さないため、室温での貯蔵安定性は非常に優れているという特徴を持つ。
【００３２】
熱硬化性樹脂にエポキシ樹脂を用いた場合、上記硬化剤と共に硬化促進剤を用いることが好ましい。硬化促進剤としては特に制限が無く、イミダゾール類、ジシアンジアミド誘導体、ジカルボン酸ジヒドラジド、トリフェニルホスフィン、テトラフェニルホスホニウムテトラフェニルボレート、２−エチル−４−メチルイミダゾールテトラフェニルボレート、１，８−ジアザビシクロ（５，４，０）ウンデセン−７−テトラフェニルボレート等を用いることができる。これらは１種又は２種以上を併用することもできる。硬化促進剤の添加量は、エポキシ樹脂及びエポキシ硬化剤１００重量部に対して０．１〜５重量部が好ましく、０．２〜３重量部がより好ましい。添加量が０．１重量部未満であるとると硬化性が劣る傾向があり、５重量部を超えると保存安定性が低下する傾向がある。
【００３３】
ダイボンディング材を形成する粘接着層には、可とう性や耐リフロークラック性を向上させる目的で、エポキシ樹脂と相溶性がある高分子量樹脂を添加することができる。このような高分子量樹脂としては、特に制限はなく、例えば、フェノキシ樹脂、高分子量エポキシ樹脂、超高分子量エポキシ樹脂などを使用することができ、これらの１種又は２種以上を併用することもできる。
エポキシ樹脂と相溶性がある高分子量樹脂の使用量は、エポキシ樹脂１００重量部に対して、４０重量部以下とするのが好ましい。４０重量部を超えると、エポキシ樹脂層のＴｇが低下する傾向がある。
【００３４】
また、ダイボンディング材には、放射線照射の高吸収化、高感度化を目的に、増感剤を添加することもできる。使用する増感剤としては、硬化性組成物に悪影響を及ぼさない限り、公知の一重項増感剤、三重項増感剤を用いることができる。例えば、ナフタレン、アントラセン、ピレン等の芳香族化合物誘導体、カルバゾール誘導体、ベンゾフェノン誘導体、チオキサントン誘導体、クマリン誘導体等が好適に用いられる。
【００３５】
本発明で用いる 前記放射線重合性成分には、特に制限は無く、例えば、アクリル酸メチル、メタクリル酸メチル、アクリル酸エチル、メタクリル酸エチル、アクリル酸ブチル、メタクリル酸ブチル、アクリル酸−２−エチルヘキシル、メタクリル酸−２−エチルヘキシル、ペンテニルアクリレート、テトラヒドロフルフリルアクリレート、テトラヒドロフルフリルメタクリレート、ジエチレングリコールジアクリレート、トリエチレングリコールジアクリレート、テトラエチレングリコールジアクリレート、ジエチレングリコールジメタクリレート、トリエチレングリコールジメタクリレート、テトラエチレングリコールジメタクリレート、トリメチロールプロパンジアクリレート、トリメチロールプロパントリアクリレート、トリメチロールプロパンジメタクリレート、トリメチロールプロパントリメタクリレート、１，４−ブタンジオールジアクリレート、１，６−ヘキサンジオールジアクリレート、１，４−ブタンジオールジメタクリレート、１，６−ヘキサンジオールジメタクリレート、ペンタエリスリトールトリアクリレート、ペンタエリスリトールテトラアクリレート、ペンタエリスリトールトリメタクリレート、ペンタエリスリトールテトラメタクリレート、ジペンタエリスリトールヘキサアクリレート、ジペンタエリスリトールヘキサメタクリレート、スチレン、ジビニルベンゼン、４−ビニルトルエン、４−ビニルピリジン、Ｎ−ビニルピロリドン、２−ヒドロキシエチルアクリレート、２−ヒドロキシエチルメタクリレート、１，３−アクリロイルオキシ−２−ヒドロキシプロパン、１，２−メタクリロイルオキシ−２−ヒドロキシプロパン、メチレンビスアクリルアミド、Ｎ，Ｎ−ジメチルアクリルアミド、Ｎ−メチロールアクリルアミド、トリス（β−ヒドロキシエチル）イソシアヌレートのトリアクリレート、下記一般式（２）
【化２】

（式中、Ｒは水素原子又はメチル基を示し、ｑ及びｒは１以上の整数である）
で表される化合物、（ａ）ジオール類及び（ｂ）一般式（３）
【化３】

（式中、ｎは０〜１の整数であり、R_１は炭素原子数が１〜３０の２価あるいは３価の有機性基である）
で表されるイソシアネート化合物及び（ｃ）一般式（４）
【化４】

（式中、Ｒ_２は水素原子又はメチル基であり、Ｒ_３はエチレン基あるいはプロピレン基である）
で表される化合物からなるウレタン（メタ）アクリレート化合物、（ｄ）一般式（５）
【化５】

（式中、Ｒ_１は炭素原子数が２〜３０の２価の有機基を示す）
で表されるジアミン及び（ｂ）一般式（３）で表されるイソシアネート化合物及び（ｅ）一般式（６）
【化６】

（式中、ｎは０〜１の整数である）
で表される化合物からなる尿素メタクリレート化合物及び側鎖にエチレン性不飽和基を有する放射線重合性共重合体が挙げられる。これらの放射線重合性化合物は、単独で又は２種類以上を組み合わせても、使用することができる。
【００３６】
また、上記の他に、触媒、添加剤、フィラー、カップリング剤等を含有していてもよい。また、ダイボンディング材には、その取扱い性向上、熱伝導性向上、溶融粘度の調整およびチキソトロピック性付与などを目的として、無機フィラーを添加することもできる。無機フィラーとしては、特に制限はなく、例えば、水酸化アルミニウム、水酸化マグネシウム、炭酸カルシウム、炭酸マグネシウム、ケイ酸カルシウム、ケイ酸マグネシウム、酸化カルシウム、酸化マグネシウム、酸化アルミニウム、窒化アルミニウム、ほう酸アルミウイスカ、窒化ほう素、結晶性シリカ、非晶性シリカ等が挙げられ、フィラーの形状は特に制限されるものではない。これらのフィラーは単独で又は二種類以上を組み合わせて使用することができる。
中でも、熱伝導性向上のためには、酸化アルミニウム、窒化アルミニウム、窒化ほう素、結晶性シリカ、非晶性シリカ等が好ましい。また、溶融粘度の調整やチキソトロピック性の付与の目的には、水酸化アルミニウム、水酸化マグネシウム、炭酸カルシウム、炭酸マグネシウム、ケイ酸カルシウム、ケイ酸マグネシウム、酸化カルシウム、酸化マグネシウム、酸化アルミニウム、結晶性シリカ、非晶性シリカなどが好ましい。
無機フィラーの使用量は、粘接着層１００重量部に対して１〜２０重量部が好ましい。１重量部未満だと添加効果が得られない傾向があり、２０重量部を超えると、接着剤層の貯蔵弾性率の上昇、接着性の低下、ボイド残存による電気特性の低下等の問題を起こす傾向がある。
【００３７】
また、ダイボンディング材には、異種材料間の界面結合を良くするために、各種カップリング剤を添加することもできる。カップリング剤としては、例えば、シラン系、チタン系、アルミニウム系等が挙げられ、中でも効果が高い点でシラン系カップリング剤が好ましい。
上記シラン系カップリング剤としては、特に制限はなく、例えば、ビニルトリクロルシラン、ビニルトリス（β−メトキシエトキシ）シラン、ビニルトリエトキシシラン、ビニルトリメトキシシラン、γ−メタクリロキシプロピルトリメトキシシラン、γ−メタクリロキシプロピルメチルジメトキシシラン、β−（３，４−エポキシシクロヘキシル）エチルトリメトキシシラン、γ−グリシドキシプロピルトリメトキシシラン、γ−グリシドキシプロピルメチルジメトキシシラン、γ−グリシドキシプロピルメチルジエトキシシラン、Ｎ−β（アミノエチル）γ−アミノプロピルトリメトキシシラン、Ｎ−β（アミノエチル）γ−アミノプロピルメチルジメトキシシラン、γ−アミノプロピルトリエトキシシラン、Ｎ−フェニル−γ−アミノプロピルトリメトキシシラン、γ−メルカプトプロピルトリメトキシシラン、γ−メルカプトプロピルトリエトキシシラン、３−アミノプロピルメチルジエトキシシラン、３−ウレイドプロピルトリエトキシシラン、３−ウレイドプロピルトリメトキシシラン、３−アミノプロピルトリメトキシシラン、３−アミノプロピル−トリス（２−メトキシ−エトキシ−エトキシ）シラン、Ｎ−メチル−３−アミノプロピルトリメトキシシラン、トリアミノプロピルトリメトキシシラン、３,４，５−ジヒドロイミダゾール−１−イル−プロピルトリメトキシシラン、３−メタクリロキシプロピル−トリメトキシシラン、３−メルカプトプロピルメチルジメトキシシラン、３−クロロプロピルメチルジメトキシシラン、３−クロロプロピルジメトキシシラン、３−シアノプロピルトリエトキシシラン、ヘキサメチルジシラザン、Ｎ，Ｏ−ビス（トリメチルシリル）アセトアミド、メチルトリメトキシシラン、メチルトリエトキシシラン、エチルトリクロロシラン、ｎ−プロピルトリメトキシシラン、イソブチルトリメトキシシラン、アミルトリクロロシラン、オクチルトリエトキシシラン、フェニルトリメトキシシラン、フェニルトリエトキシシラン、メチルトリ（メタクリロイルオキエトキシ）シラン、メチルトリ（グリシジルオキシ）シラン、Ｎ−β（Ｎ−ビニルベンジルアミノエチル）−γ−アミノプロピルトリメトキシシラン、オクタデシルジメチル〔３−（トリメトキシシリル）プロピル〕アンモニウムクロライド、γ−クロロプロピルメチルジクロロシラン、γ−クロロプロピルメチルジメトキシシラン、γ−クロロプロピルメチルジエトキシシラン、トリメチルシリルイソシアネート、ジメチルシリルイソシアネート、メチルシリルトリイソシアネート、ビニルシリルトリイソシアネート、フェニルシリルトリイソシアネート、テトライソシアネートシラン、エトキシシランイソシアネートなどを使用することができ、これらの１種又は２種以上を併用することもできる。
【００３８】
また、チタン系カップリング剤としては、例えば、イソプロピルトリオクタノイルチタネート、イソプロピルジメタクリルイソステアロイルチタネート、イソプロピルトリドデシルベンゼンスルホニルチタネート、イソプロピルイソステアロイルジアクリルチタネート、イソプロピルトリ（ジオクチルホスフェート）チタネート、イソプロピルトリクミルフェニルチタネート、イソプロピルトリス（ジオクチルパイロホスフェート）チタネート、イソプロピルトリス（ｎ−アミノエチル）チタネート、テトライソプロピルビス（ジオクチルホスファイト）チタネート、テトラオクチルビス（ジトリデシルホスファイト）チタネート、テトラ（２，２−ジアリルオキシメチル−１−ブチル）ビス（ジトリデシル）ホスファイトチタネート、ジクミルフェニルオキシアセテートチタネート、ビス（ジオクチルパイロホスフェート）オキシアセテートチタネート、テトライソプロピルチタネート、テトラノルマルブチルチタネート、ブチルチタネートダイマー、テトラ（２−エチルヘキシル）チタネート、チタンアセチルアセトネート、ポリチタンアセチルアセトネート、チタンオクチレングリコレート、チタンラクテートアンモニウム塩、チタンラクテート、チタンラクテートエチルエステル、チタンチリエタノールアミネート、ポリヒドロキシチタンステアレート、テトラメチルオルソチタネート、テトラエチルオルソチタネート、テタラプロピルオルソチタネート、テトライソブチルオルソチタネート、ステアリルチタネート、クレシルチタネートモノマー、クレシルチタネートポリマー、ジイソプロポキシ−ビス（２，４−ペンタジオネート）チタニウム（ＩＶ）、ジイソプロピル−ビス−トリエタノールアミノチタネート、オクチレングリコールチタネート、テトラ−ｎ−ブトキシチタンポリマー、トリ−ｎ−ブトキシチタンモノステアレートポリマー、トリ−ｎ−ブトキシチタンモノステアレートなどを使用することができ、これらの１種又は２種以上を併用することもできる。
【００３９】
アルミニウム系カップリング剤としては、例えば、エチルアセトアセテートアルミニウムジイソプロピレート、アルミニウムトリス（エチルアセトアセテート）、アルキルアセトアセテートアルミニウムジイソプロピレート、アルミニウムモノアセチルアセテートビス（エチルアセトアセテート）、アルミニウムトリス（アセチルアセトネート）、アルミニウム−モノイソプロポキシモノオレオキシエチルアセトアセテート、アルミニウム−ジ−ｎ−ブトキシモノエチルアセトアセテート、アルミニウム−ジ−ｉｓｏ−プロポキシド−モノエチルアセトアセテート等のアルミニウムキレート化合物、アルミニウムイソプロピレート、モノ−ｓｅｃ−ブトキシアルミニウムジイソプロピレート、アルミニウム−ｓｅｃ−ブチレート、アルミニウムエチレート等のアルミニウムアルコレートなどを使用することができ、これらの１種又は２種以上を併用することもできる。
【００４０】
上記カップリング剤の使用量は、その効果や耐熱性及びコストの面から、樹脂成分１００重量部に対し、０．０１〜１０重量部とするのが好ましい。
ダイボンディング材を形成する接着剤層、または、粘接着層には、イオン性不純物を吸着して、吸湿時の絶縁信頼性をよくするために、さらにイオン捕捉剤を添加することもできる。このようなイオン捕捉剤としては、特に制限はなく、例えば、トリアジンチオール化合物、ビスフェノール系還元剤等の、銅がイオン化して溶け出すのを防止するため銅害防止剤として知られる化合物、ジルコニウム系、アンチモンビスマス系マグネシウムアルミニウム化合物等の無機イオン吸着剤などが挙げられる。
上記イオン捕捉剤の使用量は、添加による効果や耐熱性、コスト等の点から、樹脂組成物１００重量部に対し０．１〜１０重量部が好ましい。
【００４１】
本発明において接着剤層と粘着材層が独立したフィルムを用いる場合、接着剤層は熱可塑性成分（例えばポリイミド）１００重量部、熱硬化性成分（例えばエポキシ樹脂）１〜２００重量部、無機フィラー１〜８０００重量部の配合にて作製することが可能である。
一方１層のフィルムが粘着材層と接着剤層を兼ねる場合、粘接着剤層は熱可塑性成分（例えばポリイミド）１００重量部に対して熱硬化性成分（例えばエポキシ樹脂）１〜２００重量部、放射線重合性化合物（例えば光塩基発生剤）０．０１〜２００重量部、無機フィラー１〜８０００重量部の配合にて作製することが可能である。
上記により作製した接着剤層、粘接着剤層のワイヤボンド温度における引っ張り弾性率が低い場合は、無機フィラー、熱硬化性成分の増量により接着剤層、粘接着剤層を高弾性化することができる。逆に上記により作製した接着剤層、粘接着剤層のワイヤボンド温度における引っ張り弾性率が高い場合は、無機フィラー、熱硬化成分の増量をすることにより接着剤層、粘接着剤層を低弾性化することができる。
【００４２】
接着剤層を単独で用いる場合は以下に示す方法により使用することができる。（１）熱硬化性型の接着剤層と基材層とをこの順に備えたダイボンディング材の接着剤層と、半導体ウェハとを貼り合わせる、（２）ダイボンド材の基材層をはく離し、放射線硬化型の粘着剤層と基材層とをこの順に備えたダイシング材の粘着材層と、接着剤層とを貼り合わせ、熱硬化性型の接着剤層、放射線硬化型の粘着剤層と基材層とをこの順に備えたダイボンディング材を設ける、（３）半導体ウェハをダイシングし所望の大きさの半導体素子に切断する、（４）基材層側より放射線照射することにより前記接着剤層と前記粘着剤層との間の粘着力を変化させる、（５）前記接着剤層と前記粘着剤層との間で剥離し、接着剤層付き半導体素子を得る、（６）前記接着剤層付き半導体素子の接着剤層を、配線付基材、または、半導体素子に接着する、（７）前記半導体素子と配線付基材とをワイヤボンドにて接続する。
【００４３】
接着剤層と放射線硬化型の粘着剤層と基材層とをこの順に備えたダイボンディング材を用いる場合は以下に示す方法により使用することができる。（１）熱硬化性型の接着剤層と放射線硬化型の粘着剤層と基材層とをこの順に備えたダイボンディング材の接着剤層と、半導体ウェハとを貼り合わせる、（２）半導体ウェハをダイシングし所望の大きさの半導体素子に切断する、（３）基材層側より放射線照射することにより前記接着剤層と前記粘着剤層との間の粘着力を変化させる、（４）前記接着剤層と前記粘着剤層との間で剥離し、接着剤層付き半導体素子を得る、（５）前記接着剤層付き半導体素子の接着剤層を、配線付基材、または、半導体素子に接着する、（６）前記半導体素子と配線付基材とをワイヤボンドにて接続する。
【００４４】
一方熱硬化性かつ放射線硬化性を有する粘接着剤層と基材層とをこの順に備えたダイボンディング材を用いる場合は以下に示す方法により使用することができる。（１）熱硬化性かつ放射線硬化性を有する粘接着剤層と基材層とをこの順に備えたダイボンディング材の接着剤層と、半導体ウェハとを貼り合わせる、（２）半導体ウェハをダイシングし所望の大きさの半導体素子に切断する、（３）基材層側より放射線照射することにより前記接着剤層と前記粘着剤層との間の粘着力を変化させる、（４）前記接着剤層と前記粘着剤層との間で剥離し、接着剤層付き半導体素子を得る、（５）前記接着剤層付き半導体素子の接着剤層を、配線付基材、または、半導体素子に接着する、（６）前記半導体素子と配線付基材とをワイヤボンドにて接続する。
【００４５】
【実施例】
以下、本発明を実施例により詳細に報告するが、本発明は、これらに制限されるものではない。
【００４６】
（実施例１）
樹脂ワニスＡの調製
温度計、攪拌機及び塩化カルシウム管を備えた５００ｍｌフラスコに、２，２−ビス〔４−（４−アミノフェノキシ）フェニル〕プロパン４１．０５ｇ（０．１モル）及びＮ−メチル−２−ピロリドン１５０ｇを仕込み攪拌した。ジアミンの溶解後、フラスコを氷浴中で冷却しながら、１，１０−（デカメチレン）ビス（トリメリテート無水物）５２．２ｇ（０．１モル）を少量ずつ添加した。室温（２５℃）で３時間反応させたのち、キシレン３０ｇを加え、窒素ガスを吹き込みながら１７５℃で加熱し、水と共にキシレンを共沸除去した。その反応液を水中に注ぎ、沈殿したポリマーを濾別し、乾燥してポリイミド樹脂を得た。
このポリイミド樹脂５０ｇ、ｏ−クレゾールノボラック型エポキシ樹脂（日本化薬（株）製、商品名：ＥＳＣＮ−１９５）１０ｇ、フェノールノボラック樹脂（明和化成（株）製、商品名：Ｈ−１）５．３ｇ、テトラフェニルホスホニウムテトラフェニルボラート（北興化学（株）製、商品名：ＴＰＰＫ）０．２ｇを、溶剤であるＮ−メチル−２−ピロリドン２００ｇ中に加えて溶解させ、樹脂ワニスＡを得た。
【００４７】
樹脂ワニスＢの調製
温度計、攪拌機及び塩化カルシウム管を備えた５００ｍｌフラスコに、２，２−ビス〔４−（４−アミノフェノキシ）フェニル〕プロパン１０．２５ｇ（０．０５モル）、４，９−ジオキサトリデカン−１，１２−ジアミン（０．０５モル）５．１０ｇ及びＮ−メチル−２−ピロリドン１５０ｇを仕込み攪拌した。ジアミンの溶解後、フラスコを氷浴中で冷却しながら、１，１０−（デカメチレン）ビス（トリメリテート無水物）５２．２ｇ（０．１モル）を少量ずつ添加した。室温（２５℃）で３時間反応させたのち、キシレン３０ｇを加え、窒素ガスを吹き込みながら１７５℃で加熱し、水と共にキシレンを共沸除去した。その反応液を水中に注ぎ、沈殿したポリマーを濾別し、乾燥してポリイミド樹脂を得た。
このポリイミド樹脂５０ｇ、ｏ−クレゾールノボラック型エポキシ樹脂（日本化薬（株）製、商品名：ＥＳＣＮ−１９５）１０ｇ、フェノールノボラック樹脂（明和化成（株）製、商品名：Ｈ−１）５．３ｇ、テトラフェニルホスホニウムテトラフェニルボラート（北興化学（株）製、商品名：ＴＰＰＫ）０．２ｇを、溶剤であるＮ−メチル−２−ピロリドン２００ｇ中に加えて溶解させ、樹脂ワニスＢを得た。
なお、フィラーとして下記のフィラーを用いた。
フィラー
ＴＣＧ−１：徳力化学研究所製、銀フレーク
ＨＰ−Ｐ１：水島合金鉄(株)製、窒化ホウ素（フレーク状）
ＣｕＬｏｘ６０１０：(株)ニューメタルスエンドケミカルスコーポレーション製、銅フィラー（フレーク状）
【００４８】
接着フィルムの調製
得られた樹脂ワニスに上記したフィラーを均一に分散させて接着剤ワニスを得た。この接着剤ワニスを、厚さ５０μｍのポリプロピレンフィルム上に塗布し、８０℃３０分予備乾燥後、１５０℃で３０分間加熱乾燥して、基材（ポリプロピレンフィルム）を備えた膜厚が３０μｍのダイボンディング材を作製した。
【００４９】
ワイヤボンド性の評価
上記で得られたダイボンディング材の接着剤層と半導体ウェハとを貼り合わせ、基材層をはく離した後に市販の紫外線硬化型ダイシングテープ（古河電工（株）製 ＵＣ−３３４ ＥＰ−１１０）を張り合わせる。半導体ウェハをダイシングして半導体素子に切断した後、ダイシングテープの基材層側より放射線照射（５００Ｊ/ｃｍ²）して、接着剤層と前記粘着剤層との間で剥離し、接着剤層付き半導体素子を得る。得られた接着剤層付き半導体素子を４２アロイリードフレーム上に２５０℃／１０００ｇ／５ｓｅｃの条件で加熱圧着して、ワイヤボンディング性評価用サンプルを得た。ワイヤボンダ及び使用部材の種類を表１に、ワイヤボンド性評価条件の詳細を表２に示した。ワイヤボンド性はボンディング後の接続可否で評価した。
【００５０】
【表１】
表１ ワイヤボンダ及び使用部材の種類

【００５１】
【表２】
表２ ワイヤボンド条件

【００５２】
ワニスＡ、Ｂを用い、充填材の種類、含量を変化させ、引っ張り弾性率の異なったボンディング材を作製し試験に供した。表３〜７に実施例１〜１９、比較例１〜１０の半導体装置に用いたダイボンディング材の樹脂、フィラーの種類、含量、ワイヤボンド温度、ダイボンディング材の硬化物のワイヤボンド温度における引っ張り弾性率（Ｅｎ）、半導体素子の面積（Ｓｎ）、ダイボンディング材の接着層の厚み（ｔｎ）について、Ｅｎ×Ｓｎ、Ｅｎ／ｔｎ、Ｓｎ／ｔｎ、およびＥｎ×Ｓｎ／ｔｎを示した。
【００５３】
【表３】
表３ フィラー含量とワイヤボンド性の関係

【００５４】
比較例１、２はダイボンディング材の引っ張り弾性率が低いため、ｎ段目の半導体素子の面積をＳｎ（ｍｍ^２）、該半導体素子の底面に接するｎ段目の接着剤層の弾性率をＥｎ（ＭＰａ）、厚みをｔｎ（μｍ）としたときの（Ｅｎ×Ｓｎ）／ｔｎで表される値が１．５未満となるため、ワイヤボンドすることができなかった。
【００５５】
【表４】
表４ チップサイズとワイヤボンド性の関係

【００５６】
比較例１、３、４はダイボンディング材の引っ張り弾性率が低く、またチップサイズが小さいため、ｎ段目の半導体素子の面積をＳｎ（ｍｍ^２）、該半導体素子の底面に接するｎ段目の接着剤層の弾性率をＥｎ（ＭＰａ）、厚みをｔｎ（μｍ）としたときの（Ｅｎ×Ｓｎ）／ｔｎで表される値が１．５未満となるため、ワイヤボンドすることができなかった。
【００５７】
【表５】
表５ ワイヤボンド温度とワイヤボンド性の関係

【００５８】
比較例１、３、４はワイヤボンドの温度が高いためダイボンディング材の引っ張り弾性率が低く、またチップサイズが小さいため、ｎ段目の半導体素子の面積をＳｎ（ｍｍ^２）、該半導体素子の底面に接するｎ段目の接着剤層の弾性率をＥｎ（ＭＰａ）、厚みをｔｎ（μｍ）としたときの（Ｅｎ×Ｓｎ）／ｔｎで表される値が１．５未満となるため、ワイヤボンドすることができなかった。
【００５９】
【表６】
表６ ダイボンド材配合とワイヤボンド性の関係

【００６０】
比較例３、５はダイボンディング材の引っ張り弾性率が低いため、ｎ段目の半導体素子の面積をＳｎ（ｍｍ^２）、該半導体素子の底面に接するｎ段目の接着剤層の弾性率をＥｎ（ＭＰａ）、厚みをｔｎ（μｍ）としたときの（Ｅｎ×Ｓｎ）／ｔｎで表される値が１．５未満となるため、ワイヤボンドすることができなかった。
【００６１】
【表７】
表７ ダイボンド材厚とワイヤボンド性の関係

【００６２】
比較例３、６〜１０はダイボンディング材の引っ張り弾性率が低く、またダイボンディング材の厚みが厚いため、ｎ段目の半導体素子の面積をＳｎ（ｍｍ^２）、該半導体素子の底面に接するｎ段目の接着剤層の弾性率をＥｎ（ＭＰａ）、厚みをｔｎ（μｍ）としたときの（Ｅｎ×Ｓｎ）／ｔｎで表される値が１．５未満となるため、ワイヤボンドすることができなかった。
【００６３】
以上の結果から、複数個の半導体素子がそれぞれ接着剤層を介して積層された構造を有してなる半導体装置であって、半導体素子を配線付基材にワイヤボンド方式にて接続してなり、ｎ段目の半導体素子の面積をＳｎ（ｍｍ^２）、該半導体素子の底面に接するｎ段目の接着剤層の弾性率をＥｎ（ＭＰａ）、厚みをｔｎ（μｍ）としたとき、１．５ ≦（Ｅｎ×Ｓｎ）／ｔｎ ≦ １０００ を満たす半導体装置において優れたワイヤボンド性を得ることができる。
【００６４】
表８〜１０に実施例２０〜２８、比較例１１〜１５の半導体装置に用いたダイボンディング材の樹脂、フィラーの種類、含量、ワイヤボンド温度、ダイボンディング材の硬化物のワイヤボンド温度における引っ張り弾性率（Ｅｎ）、半導体素子の面積（Ｓｎ）、ダイボンディング材の接着層の厚み（ｔｎ）について、Ｅｎ×Ｓｎ、Ｅｎ／ｔｎ、Ｓｎ／ｔｎ、およびＥｎ×Ｓｎ／ｔｎを示した。各ダイボンド材を用い、図４に示す半導体装置を作製した際の初期欠陥の有無を調べた。
【００６５】
【表８】
表８ チップサイズと初期ボイドの関係

【００６６】
比較例１１、１２はチップサイズが大きいため、配線付基材表面の凹凸にダイボンド材を充てんすることができない。そのため、半導体装置内のダイボンディング材／配線付基材界面にボイドが生じた。
【００６７】
【表９】
表９ ダイボンディング材引っ張り弾性率と初期ボイドの関係

【００６８】
比較例１２、１３はダイボンディング材の引っ張り弾性率が高いため、配線付基材表面の凹凸にダイボンディング材を充てんすることができない。そのため、半導体装置内のダイボンド材／配線付基材界面にボイドが生じた。
【００６９】
【表１０】
表１０ ダイボンディング材厚みと初期ボイドの関係

【００７０】
比較例１２、１４、１５はダイボンディング材の厚みが厚いため、配線付基材表面の凹凸にダイボンド材を充てんすることができない。そのため、半導体装置内のダイボンド材／配線付基材界面にボイドが生じた。
【００７１】
前記比較例１１〜１５の半導体装置に吸湿リフローを行うと、初期ボイドが起点となるダイボンド材／配線付基材界面のはく離やダイボンド材の凝集破壊が生じてしまい好ましくなかった。
【００７２】
以上の結果から、複数個の半導体素子がそれぞれ接着剤層を介して積層された構造を有してなる半導体装置であって、半導体素子を配線付基材にワイヤボンド方式にて接続してなり、ｎ段目の半導体素子の面積をＳｎ（ｍｍ^２）、該半導体素子の底面に接するｎ段目の接着剤層の弾性率をＥｎ（ＭＰａ）、厚みをｔｎ（μｍ）としたとき、（Ｅｎ×Ｓｎ）／ｔｎ ≦ １０００ を満たす半導体装置において初期欠陥がなく優れた半導体装置を得ることができることができた。
【００７３】
【発明の効果】
本発明の半導体装置により、ワイヤボンド時の熱履歴に耐え、種々組み立て条件下でも良好にワイヤボンドできるダイボンディング材を用いた半導体装置及びその製造方法を提供でき、良好なワイヤボンド性を確保できると共に、信頼性に優れる半導体装置となる。
【図面の簡単な説明】
【図１】 ダイボンディング材を示す断面図である。
【図２】 ダイボンディング材を半導体ウェハ裏面にラミネートした状態の断面図である。
【図３】 ダイボンド材を半導体ウェハ裏面にラミネート後に基材層をはく離し、接着剤層側にダイシング材を貼り合わせ接着剤層、粘着剤層と基材層とをこの順に備えたダイボンディング材とし、個片化し、得られた接着剤層付き半導体チップを示す断面図である。
【図４】 ダイボンディング材を用いた半導体装置の断面図である。
【符号の説明】
１ 接着剤層
２ 基材層
３ 半導体ウェハ
４ ダイシングテープ
５ 封止用樹脂
６ ボンディングワイヤ
７ 配線付基材
８ 外部接続端子[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor device, a manufacturing method thereof, and a die bonding material used for the semiconductor device.
[0002]
[Prior art]
Conventionally, a silver paste has been mainly used for joining a semiconductor element and a semiconductor element mounting support member. However, with the recent miniaturization and high performance of semiconductor elements, the support members used are also required to be miniaturized and finer. Due to the occurrence of defects during wire bonding due to the above, difficulty in controlling the thickness of the adhesive layer, and the occurrence of voids in the adhesive layer, it has become impossible to cope with the above requirements. Therefore, in recent years, a film-like die bonding material has been used.
[0003]
On the other hand, copper lead frames (which are susceptible to oxidation due to heat) and insulating support substrates (which have low thermal conductivity), which have begun to be used in recent years, have a large coefficient of thermal expansion, and thus are easily warped during heat bonding. When the film-like die bonding material is used for bonding to a substrate, a material that can be bonded at low temperature and at low temperature is strongly desired.
[0004]
The supply form of the film-shaped die bonding material is generally an adhesive layer only, or an adhesive layer and at least one protective film layer laminated, and the film-shaped die bonding material is any of the following: Used by the method. (1) The adhesive layer is cut into an arbitrary size and attached onto a substrate with wiring and a semiconductor element, and the semiconductor element is thermocompression bonded thereon. (2) Adhering the adhesive layer to the entire opposite side of the semiconductor wafer circuit surface and then separating it with a dicer to obtain a semiconductor element with an adhesive layer, which is thermocompression bonded to the substrate with wiring and the semiconductor element . After press-bonding by any method, if necessary, it is appropriately heat-cured, and the semiconductor element and the substrate with wiring are electrically bonded by wire bonding. Further, the upper surface of the semiconductor device is sealed with resin and cured to obtain a semiconductor device.
[0005]
Film-type die bonding materials are mainly composed of thermoplastic resin, and the use of thermoplastic resin with a low melting point can lower the bonding temperature, lead frame oxidation, damage to the chip, etc. Can be reduced. However, a resin film using a thermoplastic resin having a low melting point cannot withstand heat treatment in the wire bonding process because of low adhesive strength and elastic modulus when heated.
[0006]
The wire bondability includes a wire including an external force such as an ultrasonic wave applied at the time of wire bonding even if a die bonding material having certain physical properties is used, the form of the semiconductor package, the material of the substrate with wiring, the chip size, the wire bonding temperature, and the wire bonding property. Since it changes depending on the bonding conditions, the thickness of the die bonding material, etc., it is necessary to prepare a die bonding material corresponding to each package. However, until now, there has been no guideline for ensuring good wire bondability, so the development efficiency of the die bonding material and semiconductor device capable of ensuring the wire bondability has been extremely poor.
[0007]
[Non-Patent Document 1]
Journal of Photopolymer Science and Technology Vol. 12, 313-314 (1999)
[Non-Patent Document 2]
Chemistry of Materials, 11, 170-176 (1999)
[Non-Patent Document 3]
Journal of American Chemical Society 118, 12925 (1996)
[Non-Patent Document 4]
Polymer Journal 28, 795 (1996)
[0008]
[Problems to be solved by the invention]
In view of the above-described problems of the prior art, the present invention can withstand heat history during wire bonding and various assembly in the manufacture of various types of semiconductor devices in which semiconductor elements are connected to a substrate with wiring by a wire bond method. An object of the present invention is to provide a semiconductor device using a die bonding material that can be favorably wire-bonded even under conditions and a method for manufacturing the same.
[0009]
[Means for Solving the Problems]
The present invention relates to the following inventions.
<1> A semiconductor device having a structure in which a plurality of semiconductor elements are laminated via an adhesive layer, wherein the semiconductor elements are connected to a substrate with wiring by a wire bond method,
The area of the n-th semiconductor element is Sn (mm ² ), When the tensile elastic modulus at the wire bond temperature of the adhesive layer of the n-stage die bonding material in contact with the bottom surface of the semiconductor element is En (MPa) and the thickness is tn (μm),
A semiconductor device in which 1.5 <(En × Sn) / tn <1000.
<2> The cured product of the die bonding material has a tensile elastic modulus at 150 ° C. in the range of 0.1 to 500 MPa and a tensile elastic modulus at 280 ° C. in the range of 0.1 to 300 MPa. The semiconductor device according to <1>.
<3> (I) A step of bonding the adhesive layer of the die bonding material provided with the thermosetting type adhesive layer and the base material layer in this order and the semiconductor wafer;
(II) The base material layer of the die bond material is peeled off, and the adhesive material layer of the dicing material provided with the radiation curable pressure sensitive adhesive layer and the base material layer in this order is bonded to the adhesive layer, and the thermosetting type A step of providing a die bonding material comprising an adhesive layer, a radiation curable pressure-sensitive adhesive layer and a base material layer in this order,
(III) a step of dicing the semiconductor wafer and cutting it into semiconductor elements of a desired size;
(IV) changing the adhesive force between the adhesive layer and the pressure-sensitive adhesive layer by irradiating with radiation from the base material layer side;
(V) The process of peeling between the said adhesive bond layer and the said adhesive layer, and obtaining a semiconductor element with an adhesive bond layer,
(VI) a step of adhering the adhesive layer of the semiconductor element with an adhesive layer to a substrate with wiring or a semiconductor element;
(VII) connecting the semiconductor element and the substrate with wiring with a wire bond,
The area of the n-th semiconductor element is Sn (mm ² ), When the tensile elastic modulus at the wire bond temperature of the n-th adhesive layer in contact with the bottom surface of the semiconductor element is En (MPa) and the thickness is tn (μm),
1.5 ≦ (En × Sn) / tn ≦ 1000. A method of manufacturing a semiconductor device, wherein:
<4> (I) A step of bonding a semiconductor wafer and an adhesive layer of a die bonding material provided with a thermosetting adhesive layer, a radiation curable pressure-sensitive adhesive layer, and a base material layer in this order;
(II) a step of dicing the semiconductor wafer and cutting it into semiconductor elements of a desired size;
(III) A step of changing the adhesive force between the adhesive layer and the pressure-sensitive adhesive layer by irradiating with radiation from the base material layer side,
(IV) A step of peeling between the thermosetting adhesive layer and the radiation curable pressure-sensitive adhesive layer to obtain a semiconductor element with an adhesive layer,
(V) a step of bonding the adhesive layer of the semiconductor element with an adhesive layer to a substrate with wiring or a semiconductor element;
(VI) connecting the semiconductor element and the substrate with wiring by wire bonding,
The area of the n-th semiconductor element is Sn (mm ² ), When the tensile elastic modulus at the wire bond temperature of the adhesive layer of the n-stage die bonding material in contact with the bottom surface of the semiconductor element is En (MPa) and the thickness is tn (μm),
1.5 <(En × Sn) / tn <1000. A method for manufacturing a semiconductor device, wherein:
<5> A method for manufacturing a semiconductor device according to <3> or <4>, wherein the thermosetting adhesive layer, the radiation curable pressure-sensitive adhesive layer, and the base material layer are provided in this order. A die bonding material, wherein the thermosetting adhesive layer contains a thermoplastic resin and a thermosetting resin.
<6> The die bonding material according to <5>, wherein the radiation curable pressure-sensitive adhesive layer contains a thermoplastic resin, a thermosetting resin, and / or a radiation polymerizable component.
<7> The die bonding material according to <5>, wherein the radiation curable pressure-sensitive adhesive layer contains a thermoplastic resin, a thermosetting resin, and / or a compound that generates a base upon irradiation with radiation.
[0010]
<8> A semiconductor device comprising a semiconductor element, the adhesive layer in contact with the bottom surface of the semiconductor element and having the same area as the bottom surface, and an adherend to which the semiconductor element is bonded via the adhesive layer The semiconductor element is connected to a substrate with wiring by a wire bond method, and the adhesive layer is a thermosetting and radiation curable adhesive layer, and is in the nth stage. The area of the semiconductor element is Sn (mm ² ), When the tensile elastic modulus at the wire bond temperature of the adhesive layer of the n-stage die bonding material in contact with the bottom surface of the semiconductor element is En (MPa) and the thickness is tn (μm),
1.5 <(En × Sn) / tn <1000.
<9> (I) A step of bonding the adhesive layer of the die bonding material provided with the thermosetting and radiation curable adhesive layer and the base material layer in this order, and the semiconductor wafer;
(II) a step of dicing the semiconductor wafer and cutting it into semiconductor elements of a desired size;
(III) changing the adhesive force between the adhesive layer and the base material layer by irradiating with radiation from the base material layer side;
(IV) The process of peeling between the said adhesive layer and the said base material layer, and obtaining the semiconductor element with an adhesive layer,
(V) a step of adhering the adhesive layer of the semiconductor element with an adhesive layer to a substrate with wiring or a semiconductor element;
(VI) connecting the semiconductor element and the substrate with wiring by wire bonding,
The area of the n-th semiconductor element is Sn (mm ² ), When the tensile elastic modulus at the wire bond temperature of the adhesive layer of the n-stage die bonding material in contact with the bottom surface of the semiconductor element is En (MPa) and the thickness is tn (μm),
1.5 <(En × Sn) / tn <1000. A method for manufacturing a semiconductor device, wherein:
<10> A die bonding material for use in the method for producing a semiconductor device according to <9>, comprising a thermosetting and radiation curable adhesive layer and a base material layer, A die bonding material in which the adhesive layer contains a thermoplastic resin, a thermosetting resin, and a radiation polymerizable component.
<11> The die bonding material according to <10>, wherein the adhesive layer contains a thermoplastic resin, a thermosetting resin, and a compound that generates a base upon irradiation with radiation.
<12> The thermoplastic resin is any one of the above <5> to <7>, <10>, or <11>, wherein the thermoplastic resin is a polyimide resin or a high molecular weight resin having a weight average molecular weight of 100,000 or more. Die bonding material.
<13> The above-mentioned high molecular weight resin containing a functional monomer and having a weight average molecular weight of 100,000 or more is an epoxy group-containing (meth) acrylic copolymer containing 0.5 to 6% by weight of an epoxy group-containing repeating unit <12> The die-bonding material of description.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
The semiconductor device of the present invention is a semiconductor device having a structure in which a plurality of semiconductor elements are laminated via an adhesive layer, and the semiconductor elements are connected to a substrate with wiring by a wire bond method. The area of the nth semiconductor element is Sn (mm ² ), Where the tensile modulus at the wire bond temperature of the n-th adhesive layer in contact with the bottom surface of the semiconductor element is En (MPa) and the thickness is tn (μm), 1.5 <(En × Sn) / The range is tn <1000. The range is preferably 2.5 <(En × Sn) / tn <500, and more preferably the range is 5.0 <(En × Sn) / tn <300. When the value of (En × Sn) / tn is less than 1.5, the bonding strength of the chip-side bonding portion when wire bonding is reduced, or the chip and the bonding wire cannot be bonded. Connection reliability cannot be ensured. In addition, since a semiconductor device having the above value of 1000 or more becomes a large-area semiconductor chip, high elasticity, and a thin film die-bonding material, it is difficult to fill irregularities such as wiring steps on the surface of the substrate with wiring when die-bonding. Become. Further, since it is difficult to relieve stress generated by reflow, temperature cycle, etc., reliability is lowered, which is not preferable.
[0012]
In the present invention, the wire bond temperature T is preferably in the range of 100 ≦ T ≦ 300 ° C., and more preferably in the range of 150 ≦ T ≦ 280 ° C. If the wire bond temperature is less than 100 ° C., the gold wire tends not to be bonded. If the wire bond temperature exceeds 300 ° C., the possibility of contamination due to outgas from the constituent material increases, and the glass transition temperature of the substrate with wiring is exceeded. For this reason, the substrate with wiring is easily melted and deformed, and in any case, there is a tendency for poor bonding.
[0013]
In the present invention, the area Sn of the semiconductor element is 0.5 ≦ Sn ≦ 1000 mm. ² Is preferably within the range of 1 ≦ Sn ≦ 500 mm ² The range of is more preferable. The area Sn of the semiconductor element is 0.5 mm ² If it is less than 1,000 mm, there is a tendency that securing of the wire bond region cannot be effectively taken, and 1000 mm ² If the value exceeds 1, there is a tendency that the semiconductor device cannot be effectively downsized. The thickness tn of the adhesive layer is preferably in the range of 1 ≦ tn ≦ 500 μm, and more preferably in the range of 5 ≦ tn ≦ 250 μm. When the thickness tn of the adhesive layer is less than 1 μm, it is difficult to fill the unevenness of the substrate with wiring with the adhesive and it is difficult to relieve the thermal stress. If the thickness tn of the adhesive layer exceeds 500 μm, the moisture absorption amount of the adhesive layer increases, so that the reflow resistance of the semiconductor device tends to decrease.
[0014]
In the present invention, the tensile modulus at 150 ° C. of the cured product of the die bonding material is preferably in the range of 0.1 to 500 MPa, and more preferably in the range of 0.5 to 200 MPa. When the elastic modulus is less than 0.1 MPa, the bonding strength of the chip-side bonding portion when wire bonding is reduced, or the chip and the gold wire cannot be bonded, so that the connection reliability of the manufactured semiconductor device is ensured. There is a tendency to not be able to. In addition, about the upper limit of the said elasticity modulus, 500 MPa or less is preferable from a viewpoint of suppressing the increase in stress.
[0015]
In the present invention, the elastic modulus at 280 ° C. of the cured die bonding material is preferably in the range of 0.1 to 300 MPa, more preferably in the range of 0.5 to 150 MPa. When the elastic modulus is less than 0.1 MPa, the bonding strength of the chip-side bonding portion when wire bonding is reduced, or the chip and the gold wire cannot be bonded, so that the connection reliability of the manufactured semiconductor device is ensured. There is a tendency to not be able to. In addition, about the upper limit of the said elasticity modulus, 300 MPa or less is preferable from a viewpoint of suppressing the increase in stress. The tensile modulus after curing of the die bonding material was measured at a heating rate of 5 ° C./min and a frequency of 1 Hz using a rheometric viscoelasticity analyzer (RSA-2).
[0016]
The die bonding material used in the semiconductor device of the present invention is preferably a die bonding material provided with a thermosetting adhesive layer, a radiation curable pressure-sensitive adhesive layer, and a base material layer in this order. The radiation curable pressure-sensitive adhesive layer of the die bonding material preferably contains a thermoplastic resin, a thermosetting resin, and a radiation polymerizable component.
[0017]
The thermoplastic resin is not particularly limited as long as Tg is −50 to 10 ° C. and the weight average molecular weight is 100,000 to 1000000, or Tg is 10 to 100 ° C. and the weight average molecular weight is 5000 to 200000. Preferred as the former thermoplastic resin is a polymer containing a functional monomer, and examples of the latter thermoplastic resin include polyimide resin, polyamide resin, polyetherimide resin, polyamideimide resin, polyester resin, and polyesterimide resin. , Phenoxy resin, polysulfone resin, polyethersulfone resin, polyphenylene sulfide resin, polyetherketone resin, etc., among which polyimide resin is preferable.
[0018]
As the polymer containing the above functional monomer, an epoxy group-containing (meth) acrylic copolymer containing a functional monomer such as glycidyl acrylate or glycidyl methacrylate is preferable, and a thermosetting resin such as an epoxy resin is not used. It is preferable that it is dissolved. As the above-mentioned epoxy group-containing (meth) acrylic copolymer, for example, a (meth) acrylic ester copolymer, acrylic rubber or the like can be used, and acrylic rubber is more preferable. Acrylic rubber is a rubber mainly composed of an acrylate ester and mainly composed of a copolymer such as butyl acrylate and acrylonitrile, a copolymer such as ethyl acrylate and acrylonitrile, or the like. Moreover, as said functional monomer, it is preferable to use glycidyl acrylate or glycidyl methacrylate. Examples of such an epoxy group-containing (meth) acrylic copolymer include HTR-860P-3 manufactured by Teikoku Chemical Industry Co., Ltd.
[0019]
The amount of the epoxy group-containing repeating unit such as glycidyl acrylate or glycidyl methacrylate is preferably 0.5 to 6.0% by weight, more preferably 0.5 to 5.0% by weight, and 0.8 to 5.0% by weight. Is particularly preferred. When the amount of the epoxy group-containing repeating unit is within this range, the adhesive force can be secured and gelation can be prevented. Examples of the functional monomer include, in addition to glycidyl acrylate and glycidyl methacrylate, ethyl (meth) acrylate, butyl (meth) acrylate, and the like. These can be used alone or in combination of two or more. . In the present invention, ethyl (meth) acrylate refers to both ethyl acrylate and ethyl methacrylate. The mixing ratio in the case of using a combination of functional monomers is determined in consideration of Tg of the epoxy group-containing (meth) acrylic copolymer, and Tg is preferably −50 ° C. or higher. This is because when the Tg is −50 ° C. or higher, the tackiness of the adhesive layer in the B-stage state is appropriate, and there is no problem in handling properties. In the case of producing a polymer containing a functional monomer by polymerizing the above monomers, the polymerization method is not particularly limited, and for example, methods such as pearl polymerization and solution polymerization can be used.
[0020]
The polyimide resin used as the thermoplastic resin can be obtained, for example, by subjecting tetracarboxylic dianhydride and diamine to a condensation reaction by a known method. That is, in an organic solvent, tetracarboxylic dianhydride and diamine are used in an equimolar or almost equimolar amount (the order of addition of each component is arbitrary), and the addition reaction is carried out at a reaction temperature of 80 ° C. or less, preferably 0 to 60 ° C. Examples of the organic solvent to be used include dimethylacetamide, dimethylformamide, N-methyl-2-pyrrolidone, dimethyl sulfoxide, hexamethylphosphorylamide, m-cresol, o-chlorophenol and the like. As the reaction proceeds, the viscosity of the reaction solution gradually increases, and polyamic acid, which is a polyimide precursor, is generated. The said polyamic acid adjusts the molecular weight by heating at the temperature of 50-80 degreeC, and making it depolymerize.
[0021]
The polyimide resin can be obtained by dehydrating and ring-closing the reaction product (polyamic acid). The dehydration ring closure can be performed by a thermal ring closure method in which heat treatment is performed at 120 ° C. to 250 ° C. and a chemical ring closure method using a dehydrating agent. In the case of the thermal ring closure method, it is preferably carried out while removing water generated by the dehydration reaction out of the system. At this time, water may be removed azeotropically using benzene, toluene, xylene or the like. In the case of dehydration and ring closure by a chemical method, acetic anhydride, propionic anhydride, acid anhydride of benzoic acid, carbodiimide compounds such as dicyclohexylcarbodiimide, and the like are used as the ring closure agent. At this time, a ring-closing catalyst such as pyridine, isoquinoline, trimethylamine, aminopyridine, or imidazole may be used as necessary. The ring-closing agent or the ring-closing catalyst is preferably used in the range of 1 to 8 moles per 1 mole of tetracarboxylic dianhydride. In the present invention, the polyimide resin is a general term for polyimide and its precursor. In addition to polyamide acid, polyimide precursors include those in which polyamide acid is partially imidized.
[0022]
There is no restriction | limiting in particular as tetracarboxylic dianhydride used as a raw material of a polyimide resin, For example, 1, 2- (ethylene) bis (trimellitic anhydride), 1, 3- (trimethylene) bis (trimellitate anhydride), 1,4- (tetramethylene) bis (trimellitic anhydride), 1,5- (pentamethylene) bis (trimellitic anhydride), 1,6- (hexamethylene) bis (trimellitic anhydride), 1,7- ( Heptamethylene) bis (trimellitic anhydride), 1,8- (octamethylene) bis (trimellitic anhydride), 1,9- (nonamethylene) bis (trimellitic anhydride), 1,10- (decamethylene) bis (trimellitic anhydride) Product), 1,12- (dodecamethylene) bis (trimellitate anhydride), 1,16- (hexadeca) Tylene) bis (trimellitic anhydride), 1,18- (octadecamethylene) bis (trimellitate anhydride), pyromellitic dianhydride, 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride, 2,2 ′, 3,3′-biphenyltetracarboxylic dianhydride, 2,2-bis (3,4-dicarboxyphenyl) propane dianhydride, 2,2-bis (2,3-dicarboxyphenyl) Propane dianhydride, 1,1-bis (2,3-dicarboxyphenyl) ethane anhydride, 1,1-bis (3,4-dicarboxyphenyl) ethane anhydride, bis (2,3-dicarboxyphenyl) Methane dianhydride, bis (3,4-dicarboxyphenyl) methane dianhydride, bis (3,4-dicarboxyphenyl) sulfone dianhydride, 3,4,9,10-perylenetetra Rubonic dianhydride, bis (3,4-dicarboxyphenyl) ether dianhydride, benzene-1,2,3,4-tetracarboxylic dianhydride, 3,4,3 ′, 4′-benzophenone tetra Carboxylic dianhydride, 2,3,2 ′, 3′-benzophenone tetracarboxylic dianhydride, 3,3,3 ′, 4′-benzophenone tetracarboxylic dianhydride, 1,2,5,6- Naphthalenetetracarboxylic dianhydride, 1,4,5,8-naphthalenetetracarboxylic dianhydride, 2,3,6,7-naphthalenetetracarboxylic dianhydride, 1,2,4,5-naphthalenetetra Carboxylic dianhydride, 2,6-dichloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 2,7-dichloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 2,3,6,7-teto Chloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, phenanthrene-1,8,9,10-tetracarboxylic dianhydride, pyrazine-2,3,5,6-tetracarboxylic dianhydride Thiophene-2,3,5,6-tetracarboxylic dianhydride, 2,3,3 ′, 4′-biphenyltetracarboxylic dianhydride, 3,4,3 ′, 4′-biphenyltetracarboxylic acid Acid dianhydride, 2,3,2 ′, 3′-biphenyltetracarboxylic dianhydride, bis (3,4-dicarboxyphenyl) dimethylsilane dianhydride, bis (3,4-dicarboxyphenyl) methyl Phenylsilane dianhydride, bis (3,4-dicarboxyphenyl) diphenylsilane dianhydride, 1,4-bis (3,4-dicarboxyphenyldimethylsilyl) benzene dianhydride, 1,3-bis (3 , 4-Dicarboxyphenyl) -1,1,3,3-tetramethyldicyclohexane dianhydride, p-phenylenebis (trimellitic anhydride), ethylenetetracarboxylic dianhydride, 1,2,3,4- Butanetetracarboxylic dianhydride, decahydronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 4,8-dimethyl-1,2,3,5,6,7-hexahydronaphthalene-1 , 2,5,6-tetracarboxylic dianhydride, cyclopentane-1,2,3,4-tetracarboxylic dianhydride, pyrrolidine-2,3,4,5-tetracarboxylic dianhydride, 1 , 2,3,4-cyclobutanetetracarboxylic dianhydride, bis (exo-bicyclo [2,2,1] heptane-2,3-dicarboxylic dianhydride, bicyclo- [2,2,2] -oct -7-ene 2,3,5,6-tetracarboxylic dianhydride, 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride, 2,2, -bis [4- (3,4- Dicarboxyphenyl) phenyl] hexafluoropropane dianhydride, 4,4′-bis (3,4-dicarboxyphenoxy) diphenyl sulfide dianhydride, 1,4-bis (2-hydroxyhexafluoroisopropyl) benzenebis ( Trimellitic anhydride), 1,3-bis (2-hydroxyhexafluoroisopropyl) benzenebis (trimellitic anhydride), 5- (2,5-dioxotetrahydrofuryl) -3-methyl-3-cyclohexene -1,2-dicarboxylic dianhydride, tetrahydrofuran-2,3,4,5-tetracarboxylic dianhydride, 4,4 '-(4,4'- Seo Pro pyridinium Denji) bis (phthalic acid dianhydride), or the like can be used, may be used in combination one or more of these.
[0023]
Moreover, there is no restriction | limiting in particular as diamine used as a raw material of a polyimide, For example, o-phenylenediamine, m-phenylenediamine, p-phenylenediamine, 3,3'-diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, 4 , 4′-diaminodiphenyl ether, 3,3′-diaminodiphenylmethane, 3,4′-diaminodiphenylmethane, 4,4′-diaminodiphenylethermethane, bis (4-amino-3,5-dimethylphenyl) methane, bis (4 -Amino-3,5-diisopropylphenyl) methane, 3,3'-diaminodiphenyldifluoromethane, 3,4'-diaminodiphenyldifluoromethane, 4,4'-diaminodiphenyldifluoromethane, 3,3'-diaminodiphenylsulfone 3,4'-dia Nodiphenyl sulfone, 4,4'-diaminodiphenyl sulfone, 3,3'-diaminodiphenyl sulfide, 3,4'-diaminodiphenyl sulfide, 4,4'-diaminodiphenyl sulfide, 3,3'-diaminodiphenyl ketone, 3 , 4′-diaminodiphenyl ketone, 4,4′-diaminodiphenyl ketone, 2,2-bis (3-aminophenyl) propane, 2,2 ′-(3,4′-diaminodiphenyl) propane, 2,2- Bis (4-aminophenyl) propane, 2,2-bis (3-aminophenyl) hexafluoropropane, 2,2- (3,4'-diaminodiphenyl) hexafluoropropane, 2,2-bis (4-amino) Phenyl) hexafluoropropane, 1,3-bis (3-aminophenoxy) benzene, 1,4-bis (3-a Nophenoxy) benzene, 1,4-bis (4-aminophenoxy) benzene, 3,3 ′-(1,4-phenylenebis (1-methylethylidene)) bisaniline, 3,4 ′-(1,4-phenylene) Bis (1-methylethylidene)) bisaniline, 4,4 ′-(1,4-phenylenebis (1-methylethylidene)) bisaniline, 2,2-bis (4- (3-aminophenoxy) phenyl) propane, 2 , 2-bis (4- (4-aminophenoxy) phenyl) propane, 2,2-bis (4- (3-aminophenoxy) phenyl) hexafluoropropane, 2,2-bis (4- (4-aminophenoxy) ) Phenyl) hexafluoropropane, bis (4- (3-aminophenoxy) phenyl) sulfide, bis (4- (4-aminophenoxy) phenyl) Rufido, bis (4- (3-aminophenoxy) phenyl) sulfone, bis (4- (4-aminophenoxy) phenyl) sulfone, aromatic diamines such as 3,5-diaminobenzoic acid, 1,2-diaminoethane, 1,3-diaminopropane, 1,4-diaminobutane, 1,5-diaminopentane, 1,6-diaminohexane, 1,7-diaminoheptane, 1,8-diaminooctane, 1,9-diaminononane, 1, 10-diaminodecane, 1,11-diaminoundecane, 1,12-diaminododecane, 1,2-diaminocyclohexane, the following general formula (1)
[Chemical 1]

(Wherein R ₁ And R ₂ Represents a divalent hydrocarbon group having 1 to 30 carbon atoms, which may be the same or different, and R ₃ And R ₄ Are monovalent hydrocarbon groups, which may be the same or different, and m is an integer of 1 or more)
Diaminopolysiloxane represented by the formula 1,3-bis (aminomethyl) cyclohexane, manufactured by Sun Techno Chemical Co., Ltd. Jeffamine D-230, D-400, D-2000, D-4000, ED-600, ED-900 , ED-2001, EDR-148 and the like, and aliphatic diamines such as polyoxyalkylene diamines can be used, and one or more of these can be used in combination.
[0024]
The thermosetting resin is not particularly limited as long as it is a resin composition that is polymerized or crosslinked by heat and / or radiation, but an epoxy resin is preferable. The epoxy resin is not particularly limited as long as it is cured and has an adhesive action. Bisphenol A type (or AD type, S type, F type) glycidyl ether, water added bisphenol A type glycidyl ether, ethylene oxide adduct bisphenol A type glycidyl ether, propylene oxide adduct bisphenol A type glycidyl ether, etc. Functional epoxy resins, novolak epoxy resins such as phenol novolac glycidyl ether and cresol novolac glycidyl ether, polyfunctional epoxy resins such as trifunctional (or tetrafunctional) glycidyl ether, glycidyl ether of dicyclopentadiene phenol resin, etc. Alicyclic epoxy resin, glycidyl ester of dimer acid, glycidylamine type epoxy resin such as trifunctional (or tetrafunctional type) glycidylamine, naphthalene resin, heterocyclic-containing epoxy It can be applied to the known resins, generally.
[0025]
As such an epoxy resin, as bisphenol A type epoxy resin, Epicoat 807, 815, 825, 827, 828, 834, 1001, 1004, 1007, 1009 manufactured by Yuka Shell Epoxy Co., Ltd., DER- manufactured by Dow Chemical Co., Ltd. 330, 301, 361, YD8125, YDF8170 manufactured by Tohto Kasei Co., Ltd. and the like. Examples of phenol novolac type epoxy resins include Epicoat 152,154 manufactured by Yuka Shell Epoxy Co., Ltd., EPPN-201 manufactured by Nippon Kayaku Co., Ltd., DEN-438 manufactured by Dow Chemical Co., Ltd., and o-cresol novolac type epoxy resin. Examples of the resin include EOCN-102S, 103S, 104S, 1012, 1025, and 1027 manufactured by Nippon Kayaku Co., Ltd., YDCN701, 702, 703, and 704 manufactured by Toto Kasei Co., Ltd. As the polyfunctional epoxy resin, Epon 1031S manufactured by Yuka Shell Epoxy Co., Ltd., Araldite 0163 manufactured by Ciba Specialty Chemicals Co., Ltd., Denacor EX-611, 614, 614B, 622, 512, 521, 421 manufactured by Nagase Chemical Co., Ltd. 411, 321 and the like. As the amine type epoxy resin, Epiquat 604 manufactured by Yuka Shell Epoxy Co., Ltd., YH-434 manufactured by Tohto Kasei Co., Ltd., TETRAD-X, TETRAD-C manufactured by Mitsubishi Gas Chemical Co., Ltd., manufactured by Sumitomo Chemical Co., Ltd. ELM-120 etc. are mentioned. Examples of the heterocyclic ring-containing epoxy resin include ERL4234, 4299, 4221, and 4206 manufactured by UCC, such as Araldite PT810 manufactured by Ciba Specialty Chemicals. These epoxy resins can be used alone or in combination of two or more.
[0026]
As the curing agent for the epoxy resin, a known curing agent that is usually used can be used. For example, amines such as aliphatic amines, alicyclic amines, aromatic polyamines, polyamides, aliphatic acid anhydrides, alicyclic acid anhydrides, acid anhydrides such as aromatic acid anhydrides, polysulfides, trifluoride Bisphenols having two or more phenolic hydroxyl groups in one molecule such as boron, bisphenol A, bisphenol F, bisphenol S, phenolic compounds such as phenol novolac resin, bisphenol A novolac resin or cresol novolac resin, dicyandiamide, organic acid Examples include dihydrazide, boron trifluoride amine complex, imidazoles, and tertiary amines. In particular, phenolic compounds such as phenol novolac resin, bisphenol A novolac resin, or cresol novolac resin are preferable because they have excellent resistance to electric corrosion during moisture absorption.
[0027]
Preferable phenolic compounds include phenol novolak resin, cresol novolak resin, t-butylphenol novolak resin, dicyclopentagencresol novolak resin, dicyclopentagen phenol novolak resin, xylylene-modified phenol novolak resin, naphthol novolak resin, trisphenol novolak resin. Resin, tetrakisphenol novolak resin, bisphenol A novolak resin, poly-p-vinylphenol resin, phenol aralkyl resin, and the like, for example, Dainippon Ink and Chemicals, trade names: Phenolite LF2882, Phenolite LF2822. , Phenolite TD-2090, Phenolite TD-2149, Phenolite VH-4150, Phenolite VH4170, Honshu Such as Manabu Co., Ltd. TrisP-PA, and the like.
[0028]
The compound that generates a base upon irradiation with radiation used in the present invention is not particularly limited as long as it is a compound that generates a base upon irradiation with radiation. As the base to be generated, a strongly basic compound is preferable in terms of reactivity and curing speed. In general, a pKa value that is a logarithm of an acid dissociation constant is used as a basic index, and a base having a pKa value in an aqueous solution of 7 or more is preferable, and a base of 9 or more is more preferable.
[0029]
Examples of compounds that are generated by irradiation with a basic compound include Journal of Photopolymer Science and Technology 12, 313-314 (1999) and Chemistry Materials 11, 170-176 (1999). Quaternary ammonium salt derivatives can be used. Since these produce highly basic trialkylamines by irradiation with actinic rays, they are optimal for curing epoxy resins. Further, carbamic acid derivatives described in Journal of American Chemical Society 118, 12925 (1996), Polymer Journal 28, 795 (1996), and the like can be used.
[0030]
Moreover, 2-methyl-1- (4- (methylthio) phenyl) -2-morpholinopropan-1-one commercially available as an oxime derivative that generates a primary amino group upon irradiation with radiation and a photoradical generator (Irgacure 907 manufactured by Ciba Specialty Chemicals), 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butanone-1-one (Irgacure 369 manufactured by Ciba Specialty Chemicals), hexaarylbisimidazole derivative (halogen) A substituent such as an alkoxy group, a nitro group, or a cyano group may be substituted with a phenyl group), a benzoisoxazolone derivative, or the like.
[0031]
In addition to the base generator by irradiation, a basic compound is generated by photo-Fries rearrangement, photo-Claisen rearrangement (photo-Cleisen rearrangement), Curtius rearrangement (Curtius rearrangement), and Stevens rearrangement (Stevens rearrangement) to cure the epoxy resin. be able to. The base generator may be used as a low molecular compound having a molecular weight of 500 or less, or a compound introduced into the main chain and side chain of a polymer. The molecular weight in this case is preferably a weight average molecular weight of 1,000 to 100,000, more preferably 5,000 to 30,000, from the viewpoints of adhesiveness and fluidity as an adhesive. Since these compounds do not show reactivity with the epoxy resin in the state of not being irradiated with radiation at room temperature (25 ° C.), they have a feature of excellent storage stability at room temperature.
[0032]
When an epoxy resin is used as the thermosetting resin, it is preferable to use a curing accelerator together with the curing agent. There are no particular limitations on the curing accelerator, and imidazoles, dicyandiamide derivatives, dicarboxylic acid dihydrazide, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4-methylimidazoletetraphenylborate, 1,8-diazabicyclo (5 , 4,0) undecene-7-tetraphenylborate and the like can be used. These may be used alone or in combination of two or more. 0.1-5 weight part is preferable with respect to 100 weight part of epoxy resins and epoxy hardener, and, as for the addition amount of a hardening accelerator, 0.2-3 weight part is more preferable. When the addition amount is less than 0.1 parts by weight, the curability tends to be inferior, and when it exceeds 5 parts by weight, the storage stability tends to decrease.
[0033]
For the purpose of improving flexibility and reflow crack resistance, a high molecular weight resin compatible with an epoxy resin can be added to the adhesive layer forming the die bonding material. There is no restriction | limiting in particular as such high molecular weight resin, For example, a phenoxy resin, a high molecular weight epoxy resin, an ultra high molecular weight epoxy resin etc. can be used, and these 1 type, or 2 or more types can also be used together. it can.
The amount of high molecular weight resin compatible with the epoxy resin is preferably 40 parts by weight or less with respect to 100 parts by weight of the epoxy resin. If it exceeds 40 parts by weight, Tg of the epoxy resin layer tends to decrease.
[0034]
In addition, a sensitizer can be added to the die bonding material for the purpose of increasing the absorption of radiation and increasing the sensitivity. As a sensitizer to be used, a known singlet sensitizer and triplet sensitizer can be used as long as they do not adversely affect the curable composition. For example, aromatic compound derivatives such as naphthalene, anthracene, and pyrene, carbazole derivatives, benzophenone derivatives, thioxanthone derivatives, and coumarin derivatives are preferably used.
[0035]
The radiation polymerizable component used in the present invention is not particularly limited. For example, methyl acrylate, methyl methacrylate, ethyl acrylate, ethyl methacrylate, butyl acrylate, butyl methacrylate, 2-ethylhexyl acrylate, 2-ethylhexyl methacrylate, pentenyl acrylate, tetrahydrofurfuryl acrylate, tetrahydrofurfuryl methacrylate, diethylene glycol diacrylate, triethylene glycol diacrylate, tetraethylene glycol diacrylate, diethylene glycol dimethacrylate, triethylene glycol dimethacrylate, tetraethylene glycol diacrylate Methacrylate, trimethylolpropane diacrylate, trimethylolpropane triacrylate, trimethylo Rupropane dimethacrylate, trimethylolpropane trimethacrylate, 1,4-butanediol diacrylate, 1,6-hexanediol diacrylate, 1,4-butanediol dimethacrylate, 1,6-hexanediol dimethacrylate, pentaerythritol tri Acrylate, pentaerythritol tetraacrylate, pentaerythritol trimethacrylate, pentaerythritol tetramethacrylate, dipentaerythritol hexaacrylate, dipentaerythritol hexamethacrylate, styrene, divinylbenzene, 4-vinyltoluene, 4-vinylpyridine, N-vinylpyrrolidone, 2 -Hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, 1,3-acryloyloxy-2 Hydroxy propane, 1,2-methacryloyloxy-2-hydroxypropane, methylenebisacrylamide, N, N- dimethyl acrylamide, N- methylol acrylamide, tris (beta-hydroxyethyl) triacrylate isocyanurate represented by the following general formula (2)
[Chemical formula 2]

(In the formula, R represents a hydrogen atom or a methyl group, and q and r are integers of 1 or more)
(A) diols and (b) general formula (3)
[Chemical 3]

(In the formula, n is an integer of 0 to 1, R ₁ Is a divalent or trivalent organic group having 1 to 30 carbon atoms)
And (c) the general formula (4)
[Formula 4]

(Wherein R ₂ Is a hydrogen atom or a methyl group, R ₃ Is ethylene group or propylene group)
A urethane (meth) acrylate compound comprising the compound represented by formula (d):
[Chemical formula 5]

(Wherein R ₁ Represents a divalent organic group having 2 to 30 carbon atoms)
And (b) an isocyanate compound represented by the general formula (3) and (e) a general formula (6)
[Chemical 6]

(Where n is an integer from 0 to 1)
And a radiation polymerizable copolymer having an ethylenically unsaturated group in the side chain. These radiation polymerizable compounds can be used alone or in combination of two or more.
[0036]
In addition to the above, a catalyst, an additive, a filler, a coupling agent and the like may be contained. In addition, an inorganic filler may be added to the die bonding material for the purpose of improving the handleability, improving the thermal conductivity, adjusting the melt viscosity, and imparting thixotropic properties. The inorganic filler is not particularly limited. For example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, Examples thereof include boron nitride, crystalline silica, amorphous silica, and the like, and the shape of the filler is not particularly limited. These fillers can be used alone or in combination of two or more.
Among these, aluminum oxide, aluminum nitride, boron nitride, crystalline silica, amorphous silica and the like are preferable for improving thermal conductivity. For the purpose of adjusting melt viscosity and imparting thixotropic properties, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, crystallinity Silica, amorphous silica and the like are preferable.
The amount of the inorganic filler used is preferably 1 to 20 parts by weight with respect to 100 parts by weight of the adhesive layer. If the amount is less than 1 part by weight, the addition effect tends not to be obtained. If the amount exceeds 20 parts by weight, problems such as an increase in storage elastic modulus of the adhesive layer, a decrease in adhesiveness, and a decrease in electrical characteristics due to residual voids are caused. Tend.
[0037]
In addition, various coupling agents can be added to the die bonding material in order to improve interfacial bonding between different materials. Examples of the coupling agent include silane-based, titanium-based, and aluminum-based, and among them, a silane-based coupling agent is preferable because it is highly effective.
The silane coupling agent is not particularly limited, and examples thereof include vinyltrichlorosilane, vinyltris (β-methoxyethoxy) silane, vinyltriethoxysilane, vinyltrimethoxysilane, γ-methacryloxypropyltrimethoxysilane, γ- Methacryloxypropylmethyldimethoxysilane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldimethoxysilane, γ-glycidoxypropylmethyldi Ethoxysilane, N-β (aminoethyl) γ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropylmethyldimethoxysilane, γ-aminopropyltriethoxysilane, N-phenyl-γ-aminopropyl Limethoxysilane, γ-mercaptopropyltrimethoxysilane, γ-mercaptopropyltriethoxysilane, 3-aminopropylmethyldiethoxysilane, 3-ureidopropyltriethoxysilane, 3-ureidopropyltrimethoxysilane, 3-aminopropyltri Methoxysilane, 3-aminopropyl-tris (2-methoxy-ethoxy-ethoxy) silane, N-methyl-3-aminopropyltrimethoxysilane, triaminopropyltrimethoxysilane, 3,4,5-dihydroimidazole-1- Yl-propyltrimethoxysilane, 3-methacryloxypropyl-trimethoxysilane, 3-mercaptopropylmethyldimethoxysilane, 3-chloropropylmethyldimethoxysilane, 3-chloropropyldimethoxysilane, 3- Anopropyltriethoxysilane, hexamethyldisilazane, N, O-bis (trimethylsilyl) acetamide, methyltrimethoxysilane, methyltriethoxysilane, ethyltrichlorosilane, n-propyltrimethoxysilane, isobutyltrimethoxysilane, amyltrichlorosilane , Octyltriethoxysilane, phenyltrimethoxysilane, phenyltriethoxysilane, methyltri (methacryloyloxyethoxy) silane, methyltri (glycidyloxy) silane, N-β (N-vinylbenzylaminoethyl) -γ-aminopropyltrimethoxysilane , Octadecyldimethyl [3- (trimethoxysilyl) propyl] ammonium chloride, γ-chloropropylmethyldichlorosilane, γ-chloropropylmethyldimethoxy Sisilane, γ-chloropropylmethyldiethoxysilane, trimethylsilyl isocyanate, dimethylsilyl isocyanate, methylsilyl triisocyanate, vinylsilyl triisocyanate, phenylsilyl triisocyanate, tetraisocyanate silane, ethoxysilane isocyanate, etc. can be used. 1 type (s) or 2 or more types can also be used together.
[0038]
Examples of the titanium-based coupling agent include isopropyl trioctanoyl titanate, isopropyl dimethacrylisostearoyl titanate, isopropyl tridodecylbenzenesulfonyl titanate, isopropyl isostearoyl diacryl titanate, isopropyl tri (dioctyl phosphate) titanate, isopropyl tricumyl Phenyl titanate, isopropyl tris (dioctyl pyrophosphate) titanate, isopropyl tris (n-aminoethyl) titanate, tetraisopropyl bis (dioctyl phosphite) titanate, tetraoctyl bis (ditridecyl phosphite) titanate, tetra (2,2-diallyl) Oxymethyl-1-butyl) bis (ditridecyl) phosphite titanate, dic Ruphenyloxyacetate titanate, bis (dioctylpyrophosphate) oxyacetate titanate, tetraisopropyl titanate, tetranormal butyl titanate, butyl titanate dimer, tetra (2-ethylhexyl) titanate, titanium acetylacetonate, polytitanium acetylacetonate, titanium octet Len glycolate, Titanium lactate ammonium salt, Titanium lactate, Titanium lactate ethyl ester, Titanium chili ethanolamate, Polyhydroxy titanium stearate, Tetramethyl orthotitanate, Tetraethyl orthotitanate, Tetarapropyl orthotitanate, Tetraisobutyl orthotitanate, Stearyl titanate , Cresyl titanate monomer, cresyl titanate , Diisopropoxy-bis (2,4-pentadionate) titanium (IV), diisopropyl-bis-triethanolamino titanate, octylene glycol titanate, tetra-n-butoxytitanium polymer, tri-n-butoxytitanium mono A stearate polymer, tri-n-butoxy titanium monostearate, or the like can be used, and one or more of these can be used in combination.
[0039]
Examples of the aluminum coupling agent include ethyl acetoacetate aluminum diisopropylate, aluminum tris (ethyl acetoacetate), alkyl acetoacetate aluminum diisopropylate, aluminum monoacetyl acetate bis (ethyl acetoacetate), aluminum tris (acetylacetate). Nate), aluminum-monoisopropoxy mono-oroxyethyl acetoacetate, aluminum-di-n-butoxy monoethyl acetoacetate, aluminum chelate compounds such as aluminum-di-iso-propoxide-monoethyl acetoacetate, aluminum isopropylate, Mono-sec-butoxyaluminum diisopropylate, aluminum-sec-butyrate, aluminum Can be used, such as aluminum alcoholates, such as ethylates, it may be used in combination one or more of them.
[0040]
The amount of the coupling agent used is preferably 0.01 to 10 parts by weight with respect to 100 parts by weight of the resin component from the viewpoints of the effect, heat resistance and cost.
An ion scavenger may be further added to the adhesive layer or the adhesive layer forming the die bonding material in order to adsorb ionic impurities and improve the insulation reliability when absorbing moisture. Such an ion scavenger is not particularly limited, for example, triazine thiol compound, bisphenol-based reducing agent, etc., a compound known as a copper damage preventing agent for preventing copper ionization and dissolution, zirconium-based And inorganic ion adsorbents such as antimony bismuth-based magnesium aluminum compounds.
The amount of the ion scavenger used is preferably 0.1 to 10 parts by weight with respect to 100 parts by weight of the resin composition from the viewpoints of the effect of addition, heat resistance, cost, and the like.
[0041]
In the present invention, when using a film in which the adhesive layer and the pressure-sensitive adhesive layer are independent, the adhesive layer is composed of 100 parts by weight of a thermoplastic component (for example, polyimide), 1 to 200 parts by weight of a thermosetting component (for example, epoxy resin), and an inorganic filler. It can be produced by blending 1 to 8000 parts by weight.
On the other hand, when one film serves as both an adhesive layer and an adhesive layer, the adhesive layer is 1 to 200 parts by weight of a thermosetting component (for example, epoxy resin) with respect to 100 parts by weight of the thermoplastic component (for example, polyimide). It can be prepared by blending 0.01 to 200 parts by weight of a radiation polymerizable compound (for example, a photobase generator) and 1 to 8000 parts by weight of an inorganic filler.
When the tensile modulus of elasticity at the wire bond temperature of the adhesive layer and the adhesive layer prepared as described above is low, the adhesive layer and the adhesive layer are made highly elastic by increasing the amount of inorganic filler and thermosetting component. be able to. Conversely, if the tensile modulus of elasticity at the wire bond temperature of the adhesive layer and the adhesive layer prepared as described above is high, the adhesive layer and the adhesive layer are increased by increasing the amount of inorganic filler and thermosetting component. Low elasticity can be achieved.
[0042]
When the adhesive layer is used alone, it can be used by the following method. (1) Bonding the adhesive layer of the die bonding material provided with the thermosetting type adhesive layer and the base material layer in this order and the semiconductor wafer, (2) peeling the base material layer of the die bonding material, A dicing material pressure-sensitive adhesive layer comprising a radiation-curable pressure-sensitive adhesive layer and a base material layer in this order and an adhesive layer are bonded together, and a thermosetting adhesive layer, a radiation-curable pressure-sensitive adhesive layer, and (3) The semiconductor wafer is diced and cut into semiconductor elements of a desired size, and (4) the adhesive is irradiated with radiation from the substrate layer side. (5) peeling between the adhesive layer and the pressure-sensitive adhesive layer to obtain a semiconductor element with an adhesive layer, (6) the adhesive The adhesive layer of a semiconductor element with a layer can be used as a substrate with wiring or a semiconductor element. Bonding, (7) for connecting said semiconductor element and the wiring substrate with at wire bonding.
[0043]
When using a die bonding material provided with an adhesive layer, a radiation curable pressure-sensitive adhesive layer, and a base material layer in this order, it can be used by the method shown below. (1) Bonding a semiconductor wafer with an adhesive layer of a die bonding material provided with a thermosetting adhesive layer, a radiation curable pressure-sensitive adhesive layer, and a base material layer in this order, and (2) a semiconductor wafer. (3) The adhesive force between the adhesive layer and the pressure-sensitive adhesive layer is changed by irradiating radiation from the base material layer side, (4) It peels between an adhesive layer and the said adhesive layer, and obtains a semiconductor element with an adhesive layer, (5) The adhesive layer of the semiconductor element with an adhesive layer is used for the base material with a wiring, or a semiconductor element (6) The semiconductor element and the substrate with wiring are connected by wire bonding.
[0044]
On the other hand, when using the die-bonding material provided with the thermosetting and radiation-curable adhesive layer and base material layer in this order, it can be used by the method shown below. (1) Bonding the adhesive layer of the die bonding material provided with the thermosetting and radiation curable adhesive layer and the base material layer in this order and the semiconductor wafer, (2) dicing the semiconductor wafer (3) The adhesive force between the adhesive layer and the pressure-sensitive adhesive layer is changed by irradiating with radiation from the base material layer side. (4) The adhesive Peel between the adhesive layer and the adhesive layer to obtain a semiconductor element with an adhesive layer. (5) Adhere the adhesive layer of the semiconductor element with an adhesive layer to a substrate with wiring or a semiconductor element. (6) The semiconductor element and the substrate with wiring are connected by wire bonding.
[0045]
【Example】
EXAMPLES Hereinafter, although an Example reports this invention in detail, this invention is not restrict | limited to these.
[0046]
(Example 1)
Preparation of resin varnish A
In a 500 ml flask equipped with a thermometer, stirrer and calcium chloride tube was added 41.05 g (0.1 mol) of 2,2-bis [4- (4-aminophenoxy) phenyl] propane and 150 g of N-methyl-2-pyrrolidone. Were stirred. After dissolution of the diamine, 52.2 g (0.1 mol) of 1,10- (decamethylene) bis (trimellitate anhydride) was added in small portions while the flask was cooled in an ice bath. After reacting at room temperature (25 ° C.) for 3 hours, 30 g of xylene was added and heated at 175 ° C. while blowing nitrogen gas, and xylene was removed azeotropically with water. The reaction solution was poured into water, and the precipitated polymer was filtered off and dried to obtain a polyimide resin.
4. 50 g of this polyimide resin, 10 g of o-cresol novolac type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., trade name: ESCN-195), phenol novolac resin (manufactured by Meiwa Kasei Co., Ltd., trade name: H-1) 3 g of tetraphenylphosphonium tetraphenylborate (made by Hokuko Chemical Co., Ltd., trade name: TPPK) was added to 200 g of N-methyl-2-pyrrolidone as a solvent and dissolved to obtain resin varnish A. It was.
[0047]
Preparation of resin varnish B
In a 500 ml flask equipped with a thermometer, stirrer and calcium chloride tube, 10.25 g (0.05 mol) of 2,2-bis [4- (4-aminophenoxy) phenyl] propane, 4,9-dioxatridecane -1,12-diamine (0.05 mol) 5.10 g and N-methyl-2-pyrrolidone 150 g were charged and stirred. After dissolution of the diamine, 52.2 g (0.1 mol) of 1,10- (decamethylene) bis (trimellitate anhydride) was added in small portions while the flask was cooled in an ice bath. After reacting at room temperature (25 ° C.) for 3 hours, 30 g of xylene was added and heated at 175 ° C. while blowing nitrogen gas, and xylene was removed azeotropically with water. The reaction solution was poured into water, and the precipitated polymer was filtered off and dried to obtain a polyimide resin.
4. 50 g of this polyimide resin, 10 g of o-cresol novolac type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., trade name: ESCN-195), phenol novolac resin (manufactured by Meiwa Kasei Co., Ltd., trade name: H-1) 3 g of tetraphenylphosphonium tetraphenylborate (made by Hokuko Chemical Co., Ltd., trade name: TPPK) was added to 200 g of N-methyl-2-pyrrolidone as a solvent and dissolved to obtain resin varnish B. It was.
In addition, the following filler was used as a filler.
Filler
TCG-1: Silver flakes manufactured by Tokuru Chemical Laboratory
HP-P1: Made by Mizushima Alloy Iron Co., Boron nitride (flakes)
CuLox6010: New Metals End Chemical Corporation, copper filler (flakes)
[0048]
Preparation of adhesive film
The above-mentioned filler was uniformly dispersed in the obtained resin varnish to obtain an adhesive varnish. This adhesive varnish was applied onto a polypropylene film having a thickness of 50 μm, pre-dried at 80 ° C. for 30 minutes, and then heat-dried at 150 ° C. for 30 minutes to provide a die having a substrate (polypropylene film) and a film thickness of 30 μm. A bonding material was prepared.
[0049]
Evaluation of wire bondability
After bonding the adhesive layer of the die bonding material obtained above and the semiconductor wafer, and peeling off the base material layer, a commercially available ultraviolet curable dicing tape (UC-334 EP-110, manufactured by Furukawa Electric Co., Ltd.) is attached. The The semiconductor wafer is diced and cut into semiconductor elements, and then irradiated with radiation from the base layer side of the dicing tape (500 J / cm ² And peeling between the adhesive layer and the pressure-sensitive adhesive layer to obtain a semiconductor element with an adhesive layer. The obtained semiconductor element with an adhesive layer was thermocompression bonded onto a 42 alloy lead frame at 250 ° C./1000 g / 5 sec to obtain a sample for wire bonding property evaluation. Table 1 shows the types of wire bonders and members used, and Table 2 shows the details of the wire bond property evaluation conditions. The wire bondability was evaluated based on whether or not connection was possible after bonding.
[0050]
[Table 1]
Table 1 Types of wire bonders and parts used

[0051]
[Table 2]
Table 2 Wire bond conditions

[0052]
Using varnishes A and B, the type and content of the filler were changed, and bonding materials having different tensile elastic moduli were prepared and used for the test. Tables 3 to 7 show examples of the resin of the die bonding material used in the semiconductor devices of Examples 1 to 19 and Comparative Examples 1 to 10, the type and content of the filler, the wire bonding temperature, and the tensile strength at the wire bonding temperature of the cured die bonding material. En × Sn, En / tn, Sn / tn, and En × Sn / tn are shown for the elastic modulus (En), the area of the semiconductor element (Sn), and the thickness (tn) of the adhesive layer of the die bonding material.
[0053]
[Table 3]
Table 3 Relationship between filler content and wire bondability

[0054]
In Comparative Examples 1 and 2, since the tensile modulus of the die bonding material is low, the area of the n-th semiconductor element is Sn (mm ² The value represented by (En × Sn) / tn when the elastic modulus of the n-th adhesive layer in contact with the bottom surface of the semiconductor element is En (MPa) and the thickness is tn (μm) is 1. Since it was less than 5, wire bonding could not be performed.
[0055]
[Table 4]
Table 4 Relationship between chip size and wire bondability

[0056]
Since Comparative Examples 1, 3, and 4 have a low tensile elastic modulus of the die bonding material and a small chip size, the area of the n-th semiconductor element is Sn (mm). ² The value represented by (En × Sn) / tn when the elastic modulus of the n-th adhesive layer in contact with the bottom surface of the semiconductor element is En (MPa) and the thickness is tn (μm) is 1. Since it was less than 5, wire bonding could not be performed.
[0057]
[Table 5]
Table 5 Relationship between wire bond temperature and wire bond property

[0058]
In Comparative Examples 1, 3, and 4, since the wire bonding temperature is high, the tensile elastic modulus of the die bonding material is low, and the chip size is small. Therefore, the area of the n-th semiconductor element is Sn (mm ² The value represented by (En × Sn) / tn when the elastic modulus of the n-th adhesive layer in contact with the bottom surface of the semiconductor element is En (MPa) and the thickness is tn (μm) is 1. Since it was less than 5, wire bonding could not be performed.
[0059]
[Table 6]
Table 6 Relationship between die bond material composition and wire bondability

[0060]
In Comparative Examples 3 and 5, since the tensile modulus of the die bonding material is low, the area of the n-th semiconductor element is Sn (mm ² The value represented by (En × Sn) / tn when the elastic modulus of the n-th adhesive layer in contact with the bottom surface of the semiconductor element is En (MPa) and the thickness is tn (μm) is 1. Since it was less than 5, wire bonding could not be performed.
[0061]
[Table 7]
Table 7 Relationship between die bond material thickness and wire bondability

[0062]
In Comparative Examples 3 and 6 to 10, since the tensile elastic modulus of the die bonding material is low and the die bonding material is thick, the area of the n-th semiconductor element is Sn (mm). ² The value represented by (En × Sn) / tn when the elastic modulus of the n-th adhesive layer in contact with the bottom surface of the semiconductor element is En (MPa) and the thickness is tn (μm) is 1. Since it was less than 5, wire bonding could not be performed.
[0063]
Based on the above results, the semiconductor device has a structure in which a plurality of semiconductor elements are laminated via an adhesive layer, and the semiconductor elements are connected to a substrate with wiring by a wire bond method. , The area of the nth stage semiconductor element is Sn (mm ² ), Where the elastic modulus of the n-th adhesive layer in contact with the bottom surface of the semiconductor element is En (MPa) and the thickness is tn (μm), 1.5 ≦ (En × Sn) / tn ≦ 1000 is satisfied. Excellent wire bondability can be obtained in a semiconductor device.
[0064]
Tables 8 to 10 show examples of the resin of the die bonding material used in the semiconductor devices of Examples 20 to 28 and Comparative Examples 11 to 15, the type and content of the filler, the wire bond temperature, and the tensile strength at the wire bond temperature of the cured product of the die bonding material. En × Sn, En / tn, Sn / tn, and En × Sn / tn are shown for the elastic modulus (En), the area of the semiconductor element (Sn), and the thickness (tn) of the adhesive layer of the die bonding material. Using each die bond material, the presence or absence of initial defects when the semiconductor device shown in FIG.
[0065]
[Table 8]
Table 8 Relationship between chip size and initial void

[0066]
Since Comparative Examples 11 and 12 have a large chip size, it is impossible to fill the unevenness on the surface of the substrate with wiring with a die bond material. Therefore, voids occurred at the interface between the die bonding material / wiring substrate in the semiconductor device.
[0067]
[Table 9]
Table 9 Relationship between tensile modulus and initial void of die bonding material

[0068]
In Comparative Examples 12 and 13, since the tensile elastic modulus of the die bonding material is high, the die bonding material cannot be filled in the irregularities on the surface of the substrate with wiring. Therefore, voids occurred at the die bond material / wiring substrate interface in the semiconductor device.
[0069]
[Table 10]
Table 10 Relationship between die bonding material thickness and initial void

[0070]
In Comparative Examples 12, 14, and 15, since the die bonding material is thick, the die bonding material cannot be filled in the irregularities on the surface of the substrate with wiring. Therefore, voids occurred at the die bond material / wiring substrate interface in the semiconductor device.
[0071]
When moisture absorption reflow was performed on the semiconductor devices of Comparative Examples 11 to 15, peeling of the die bond material / wiring substrate interface starting from the initial voids and cohesive failure of the die bond material occurred.
[0072]
Based on the above results, the semiconductor device has a structure in which a plurality of semiconductor elements are laminated via an adhesive layer, and the semiconductor elements are connected to a substrate with wiring by a wire bond method. , The area of the nth stage semiconductor element is Sn (mm ² ), An initial stage in a semiconductor device satisfying (En × Sn) / tn ≦ 1000, where En (MPa) is the elastic modulus of the n-th adhesive layer in contact with the bottom surface of the semiconductor element and tn (μm) is the thickness. An excellent semiconductor device free from defects could be obtained.
[0073]
【The invention's effect】
With the semiconductor device of the present invention, it is possible to provide a semiconductor device using a die bonding material that can withstand a heat history during wire bonding and can be well bonded under various assembly conditions, and a method of manufacturing the same, and can secure good wire bondability. At the same time, the semiconductor device is excellent in reliability.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing a die bonding material.
FIG. 2 is a cross-sectional view of a state in which a die bonding material is laminated on the back surface of a semiconductor wafer.
FIG. 3 shows a die bonding material provided with an adhesive layer, a pressure-sensitive adhesive layer, and a base material layer in this order by laminating the die bonding material on the back surface of the semiconductor wafer and then peeling off the base material layer and bonding the dicing material to the adhesive layer side. 1 is a cross-sectional view showing a semiconductor chip with an adhesive layer obtained by dividing into pieces.
FIG. 4 is a cross-sectional view of a semiconductor device using a die bonding material.
[Explanation of symbols]
1 Adhesive layer
2 Base material layer
3 Semiconductor wafer
4 Dicing tape
5 Sealing resin
6 Bonding wire
7 Substrate with wiring
8 External connection terminals

Claims (6)

A semiconductor device having a structure in which a plurality of semiconductor elements are laminated via an adhesive layer, wherein the semiconductor element is connected to a substrate with wiring by a wire bond method, and the adhesive layer is , A single-layer adhesive layer having a thickness of 10 to 40 μm,
The area of the n-th stage semiconductor element is Sn (mm ² ), and the tensile modulus at the wire bond temperature of the cured product of the adhesive layer of the n-th stage die bonding material in contact with the bottom surface of the semiconductor element is En (MPa). When the thickness is tn (μm),
A semiconductor device in which 1.5 <(En × Sn) / tn <1000.   The cured product of the adhesive layer of the die bonding material has a tensile elastic modulus at 150 ° C. in the range of 0.1 to 500 MPa, and a tensile elastic modulus at 280 ° C. in the range of 0.1 to 300 MPa. The semiconductor device according to claim 1. A method of manufacturing a semiconductor device having a structure in which a plurality of semiconductor elements are laminated via an adhesive layer, the manufacturing method comprising at least:
(I) a step of bonding the adhesive layer of the die bonding material provided with the thermosetting type adhesive layer and the base material layer in this order and the semiconductor wafer;
(II) The base layer of the die bond material is peeled off, and the adhesive layer of the dicing material provided with the radiation curable pressure sensitive adhesive layer and the base material layer in this order is bonded to the adhesive layer, and the thermosetting type A step of providing a die bonding material comprising an adhesive layer, a radiation curable pressure-sensitive adhesive layer and a base material layer in this order,
(III) a step of dicing the semiconductor wafer and cutting it into a semiconductor element of a desired size;
(IV) A step of changing the adhesive force between the adhesive layer and the pressure-sensitive adhesive layer by irradiating with radiation from the base material layer side,
(V) The process of peeling between the said adhesive bond layer and the said adhesive layer, and obtaining a semiconductor element with an adhesive bond layer,
(VI) adhering the adhesive layer of the semiconductor element with an adhesive layer to a substrate with wiring or a semiconductor element;
(VII) having a step of connecting the semiconductor element and the substrate with wiring by wire bonding,
The adhesive layer is a single adhesive layer having a thickness of 10 to 40 μm,
The area of the n-th semiconductor element is Sn (mm ² ), the tensile elastic modulus at the wire bond temperature of the cured product of the n-th adhesive layer in contact with the bottom surface of the semiconductor element is En (MPa), and the thickness is tn ( μm)
1.5 ≦ (En × Sn) / tn ≦ 1000. A method for manufacturing a semiconductor device. A method of manufacturing a semiconductor device having a structure in which a plurality of semiconductor elements are laminated via an adhesive layer, the manufacturing method comprising at least:
(I) a step of bonding a semiconductor wafer and an adhesive layer of a die bonding material provided with a thermosetting adhesive layer, a radiation curable pressure-sensitive adhesive layer, and a base material layer in this order;
(II) a step of dicing the semiconductor wafer and cutting it into a semiconductor element of a desired size;
(III) changing the adhesive force between the adhesive layer and the pressure-sensitive adhesive layer by irradiating with radiation from the base material layer side;
(IV) A step of peeling between the adhesive layer and the pressure-sensitive adhesive layer to obtain a semiconductor element with an adhesive layer;
(V) a step of bonding the adhesive layer of the semiconductor element with an adhesive layer to a substrate with wiring or a semiconductor element;
(VI) having a step of connecting the semiconductor element and the substrate with wiring by wire bonding,
The adhesive layer is a single adhesive layer having a thickness of 10 to 40 μm,
The area of the n-th semiconductor element is Sn (mm ² ), the tensile elastic modulus at the wire bond temperature of the cured product of the n-th adhesive layer in contact with the bottom surface of the semiconductor element is En (MPa), and the thickness is tn ( μm)
1.5 ≦ (En × Sn) / tn ≦ 1000. A method for manufacturing a semiconductor device. A plurality of semiconductor elements, comprising: a semiconductor element; an adhesive layer that is in contact with the bottom surface of the semiconductor element and has the same area as the bottom surface; and an adherend to which the semiconductor element is bonded via the adhesive layer Is a semiconductor device having a structure laminated via an adhesive layer, wherein the semiconductor element is connected to a substrate with wiring by a wire bond method, and the adhesive layer is thermosetting and A single-layer adhesive layer having a radiation curing property and a thickness of 10 to 40 μm ,
The area of the n-stage semiconductor element is Sn (mm ² ), and the tensile modulus at the wire bond temperature of the cured product of the adhesive layer of the n-stage die bonding material in contact with the bottom surface of the semiconductor element is En (MPa). ), When the thickness is tn (μm),
A semiconductor device in which 1.5 <(En × Sn) / tn <1000. A plurality of semiconductor elements, comprising: a semiconductor element; an adhesive layer that is in contact with the bottom surface of the semiconductor element and has the same area as the bottom surface; and an adherend to which the semiconductor element is bonded via the adhesive layer Is a method of manufacturing a semiconductor device having a structure in which each is laminated via an adhesive layer, the manufacturing method comprising at least:
(I) A step of bonding the adhesive layer of the die bonding material provided with the thermosetting and radiation curable adhesive layer and the base material layer in this order and the semiconductor wafer;
(II) a step of dicing the semiconductor wafer and cutting it into a semiconductor element of a desired size;
(III) changing the adhesive force between the adhesive layer and the base material layer by irradiating with radiation from the base material layer side;
(IV) A step of peeling between the adhesive layer and the base material layer to obtain a semiconductor element with an adhesive layer,
(V) a step of adhering the adhesive layer of the semiconductor element with an adhesive layer to a substrate with wiring or a semiconductor element;
(VI) having a step of connecting the semiconductor element and the substrate with wiring by wire bonding,
The adhesive layer is a single-layer adhesive layer having a thickness of 10 to 40 μm,
The area of the n-stage semiconductor element is Sn (mm ² ), and the tensile modulus at the wire bond temperature of the cured product of the adhesive layer of the n-stage die bonding material in contact with the bottom surface of the semiconductor element is En (MPa). ), When the thickness is tn (μm),
1.5 <(En × Sn) / tn <1000. A method of manufacturing a semiconductor device.

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