JP4105996B2 - Wire bonding method - Google Patents
Wire bonding method Download PDFInfo
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- JP4105996B2 JP4105996B2 JP2003279556A JP2003279556A JP4105996B2 JP 4105996 B2 JP4105996 B2 JP 4105996B2 JP 2003279556 A JP2003279556 A JP 2003279556A JP 2003279556 A JP2003279556 A JP 2003279556A JP 4105996 B2 JP4105996 B2 JP 4105996B2
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- wire
- ball
- neck height
- bond point
- loop
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- 238000000034 method Methods 0.000 title claims description 18
- 239000000758 substrate Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Description
本発明は、第1ボンド点と第2ボンド点間をワイヤで接続するワイヤボンディング方法に係り、特に低ワイヤループ形成方法に関する。 The present invention relates to a wire bonding method for connecting a first bond point and a second bond point with a wire, and more particularly to a method for forming a low wire loop.
第1ボンド点と第2ボンド点間を接続したワイヤに垂れが生じると、ワイヤがダイに接触して電気的にショート不良となる。これを防止するため、従来は、第1ボンド点にボールを圧着して圧着ボールを形成した後、圧着ボール上に上方に伸びたネック高さ部を形成し、ネック高さ部の上端に屈折部(癖)を形成している。例えば特許文献1参照。
When the wire connecting the first bond point and the second bond point sags, the wire comes into contact with the die and an electrical short circuit occurs. In order to prevent this, conventionally, after a ball is pressed to the first bond point to form a press-bonded ball, a neck height portion extending upward is formed on the press-bonded ball and refracted at the upper end of the neck height portion. The part (癖) is formed. For example, see
上記従来技術の方法は、圧着ボール上にネック高さ部を形成するので、必然的に高いワイヤループ形状となる。近年、半導体装置は小型化及び薄型化の傾向にあるが、従来技術の方法では、この要望を十分に満足させることがでなかった。 The above prior art method forms a neck height portion on the pressure-bonded ball, and therefore inevitably has a high wire loop shape. In recent years, semiconductor devices tend to be smaller and thinner, but the prior art methods have not been able to fully satisfy this demand.
本発明の課題は、圧着ボール上のネック高さ部を除去して低ワイヤループ化が図れると共に、ワイヤループ強度の向上が図れるワイヤボンディング方法を提供することにある。 An object of the present invention is to provide a wire bonding method capable of reducing the wire loop strength by removing the neck height portion on the press-bonded ball and improving the wire loop strength.
上記課題を解決するための本発明の請求項1は、第1ボンド点にボンディングされた圧着ボール上に上方に伸びたネック高さ部を形成して第2ボンド点にワイヤを接続した後、キャピラリの下端に延在したワイヤの先端にボールを形成し、このボールを回路基板に押し付けて下面平坦ボールを形成し、続いて前記下面平坦ボールを前記ネック高さ部の頂部に押し付けてネック高さ部を押し下げることを特徴とする。
According to
ネック高さ部の頂部を押し下げるので、圧着ボールの上端部の強度が増大し、該圧着ボールの上端部からの垂れ下がりが生じなく、またネック高さ部の押し下げにより、ネック高さ部がなくなり、極めて低いワイヤループが形成される。 Since the top of the neck height portion is pushed down, the strength of the upper end portion of the press-bonded ball is increased, and no drooping from the upper end portion of the press-bonded ball occurs, and the neck height portion is eliminated by pressing down the neck height portion, A very low wire loop is formed.
本発明のワイヤボンディング方法の一実施の形態を図1及び図2により説明する。図1(a)に示すように、セラミック基板やプリント基板等の基板又はリードフレーム等よりなる回路基板1上には、電極パッド2aが形成されたダイ2がマウントされている。電極パッド2aの第1ボンド点Aと回路基板1の配線又はリード等の第2ボンド点B間はワイヤ3により電気的に接続されている。
An embodiment of the wire bonding method of the present invention will be described with reference to FIGS. As shown in FIG. 1A, a
図1(a)に示すワイヤ3のループ形状は、一般に台形ループと呼ばれており、特許文献1の図5(a)と同じであり、同文献1の図6に示す工程によって形成されるので、その詳細な説明は省略する。第1ボンド点Aと第2ボンド点Bとに接続したワイヤループ形状は、ネック高さ部31、台形部長さ部分32及び傾斜部33とからなっており、台形部長さ部分32の両端に屈折部3a、3bが付けられている。なお、34は、ワイヤ3の先端に形成されたボールを電極パッド2aにボンディングして形成された圧着ボールを示す。このような台形ループは、ダイ2の各第1ボンド点Aと該第1ボンド点Aに対応する各第2ボンド点Bにそれぞれ形成する。以上は従来技術と同じである。
The loop shape of the
次に図1(b)に示すように、キャピラリ4に挿通されたワイヤ3の先端にボール5を形成する。その後、図1(c)に示すように、キャピラリ4を下降させて回路基板1の電気的な接続部分以外の部分(電気的に影響しない部分)に押し付けて下端を平坦にした下面平坦ボール5aを形成する。
Next, as shown in FIG. 1B, a ball 5 is formed at the tip of the
次に図1(d)に示すように、キャピラリ4を上昇及びXY軸方向に移動させ、下面平坦ボール5aを1本目のワイヤループのネック高さ部31の頂部、即ち屈折部3aの上方に位置させる。続いて図1(e)に示すように、キャピラリ4を下降させて下面平坦ボール5aで屈折部3aを下方に押し下げる。これにより、屈折部3aが除去されてネック高さ部31は、ほぼ水平に折り曲げられ台形部長さ部分32とほぼ同じ水平形状となる。その後図2に示すように、キャピラリ4は上昇する。
Next, as shown in FIG. 1 (d), the
次の2本目のワイヤループのネック高さ部31の上方に位置し、前記と同様の動作を行う。この動作は3本目以降のワイヤループについても同様に行う。予め決められた本数のワイヤループについてのネック高さ部31の押し下げを行った後、下面平坦ボール5aを回路基板1の電気的に影響しない部分にステッチボンドして取り除き、新しく下面平坦ボール5aを形成して前記した動作を行う。
The next second wire loop is positioned above the
次に図1(a)に示す台形ループ(以下、従来例という)と図2に示す低ワイヤループ(以下、本実施の形態という)との引張強度試験を行った結果について説明する。ワイヤ3は住友金属鉱山株式会社製の型式「SGL(2)」の金線25μmを使用し、従来例及び本実施の形態をそれぞれ40本のワイヤ3について試験を行った。なお、ワイヤループ長は、平均で0.97mmであった。第1ボンド点Aから第2ボンド点Bの方向に200μm離れたワイヤ3の部分を上方に引張荷重を加えてワイヤ3の破断を調べた結果、〔表1〕のような結果が得られた。
Next, the results of a tensile strength test performed on the trapezoidal loop shown in FIG. 1A (hereinafter referred to as a conventional example) and the low wire loop shown in FIG. 2 (hereinafter referred to as the present embodiment) will be described. The
〔表1〕より明らかなように、本実施の形態は従来例より、ループ高さは平均で30.0μm低くなり、引張強度は2.39g増大した。また従来例は圧着ボール34の上端部でワイヤ3が破断したが、本実施の形態は引張荷重を加えた箇所でワイヤ3が破断した。
As apparent from [Table 1], the loop height of this embodiment is 30.0 μm lower on average and the tensile strength is increased by 2.39 g than the conventional example. In the conventional example, the
このように、本実施の形態は圧着ボール34の上端では破断しなく、引張荷重を加えた箇所で破断し、また引張強度が増大したことにより、圧着ボール34の上端部の強度が増大し、該圧着ボール34の上端部からの垂れ下がりが生じなく、また下面平坦ボール5aによるネック高さ部31の押し下げにより、屈折部3aの屈折が除去され、ネック高さ部31と台形部長さ部分32がほぼ水平に形成されたものと思われる。このように、ネック高さ部31がなくなり、極めて低いワイヤループが形成された。
Thus, the present embodiment does not break at the upper end of the press-
なお、上記実施の形態は、図1(a)のワイヤループを全て又は複数本形成した後に図1(b)乃至(e)及び図2の工程を行ったが、1本のワイヤループを形成した後に図1(b)乃至(e)及び図2の工程を行ってもよい。しかし、この方法は、図1(c)の工程及び下面平坦ボール5aを除去するステッチ工程を毎回行う必要があるので生産性が悪い。また上記実施の形態は、図1(c)のように下面平坦ボール5aを形成した後、該下面平坦ボール5aを図1(d)(e)に示すようにネック高さ部31に押し付けたが、この下面平坦ボール5aを形成しなく、図1(b)に示すボール5を直接ネック高さ部31に押しつけて図1(d)(e)に示す工程を行ってもよい。しかし、ボール5であると、ボール5とワイヤ3との位置ずれが生じ、一方が逃げ易くなるので注意が必要である。
In the above embodiment, all or a plurality of wire loops in FIG. 1A are formed and then the steps in FIGS. 1B to 1E and 2 are performed. However, one wire loop is formed. After that, the steps of FIGS. 1B to 1E and FIG. 2 may be performed. However, this method has poor productivity because it is necessary to perform the process of FIG. 1C and the stitching process of removing the lower
本発明のワイヤボンディング方法の参考の形態を図3により説明する。上記実施の形態は、ワイヤボンディングを行うキャピラリ4を用い、下面平坦ボール5aを形成してネック高さ部31の頂部を押し下げた。本参考の形態は、図1(a)及び図3(a)に示すように台形ループを形成した後、下面が平坦なワイヤ押圧ツール6で図3(b)〜(c)に示すように屈折部3aを下方に押し下げる。その後図3(d)に示すようにワイヤ押圧ツール6は上昇し、次の2本目のワイヤループのネック高さ部31の上方に位置し、前記と同様の動作を行う。このように形成しても、前記と同様の効果が得られる。また本参考の形態は前記実施の形態のようにボール5を形成する必要がないので、生産性に優れている。
A reference embodiment of the wire bonding method of the present invention will be described with reference to FIG. In the above embodiment, the
なお、前記各実施の形態は、台形ループに適用した場合について説明したが、特許文献1の図5(b)の三角ループ、図1のような台形部長さ部分32の中央に窪みを形成したループにも適用できることは勿論である。
In addition, although each said embodiment demonstrated the case where it applied to a trapezoidal loop, the hollow was formed in the center of the triangular loop of FIG.5 (b) of
A 第1ボンド点
B 第2ボンド点
1 回路基板
2 ダイ
2a 電極パッド
3 ワイヤ
31 ネック高さ部
32 台形部長さ部分
34 圧着ボール
3a、3b 屈折部
4 キャピラリ
5 ボール
5a 下面平坦ボール
6 ワイヤ押圧ツール
A 1st bond point B
Claims (1)
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US8110931B2 (en) | 2008-07-11 | 2012-02-07 | Advanced Semiconductor Engineering, Inc. | Wafer and semiconductor package |
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JP2011054727A (en) * | 2009-09-01 | 2011-03-17 | Oki Semiconductor Co Ltd | Semiconductor device, method of manufacturing the same, and wire bonding method |
CN102097317B (en) * | 2010-12-01 | 2015-04-29 | 佛山市南海区宏乾电子有限公司 | Method for manufacturing totally packaged switching power supply triode |
JP5890798B2 (en) * | 2013-05-27 | 2016-03-22 | ラピスセミコンダクタ株式会社 | Semiconductor device and manufacturing method thereof |
WO2016049940A1 (en) * | 2014-10-03 | 2016-04-07 | Intel Corporation | Overlapping stacked die package with vertical columns |
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