JP4091063B2 - 発光素子実装用基板および発光素子モジュール - Google Patents
発光素子実装用基板および発光素子モジュール Download PDFInfo
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- JP4091063B2 JP4091063B2 JP2005167493A JP2005167493A JP4091063B2 JP 4091063 B2 JP4091063 B2 JP 4091063B2 JP 2005167493 A JP2005167493 A JP 2005167493A JP 2005167493 A JP2005167493 A JP 2005167493A JP 4091063 B2 JP4091063 B2 JP 4091063B2
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- H—ELECTRICITY
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- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
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- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/858—Means for heat extraction or cooling
- H10H20/8581—Means for heat extraction or cooling characterised by their material
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
- H10H20/856—Reflecting means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S362/00—Illumination
- Y10S362/80—Light emitting diode
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Description
また、本発明は、上述の発光素子実装用基板と、この発光素子実装用基板の反射カップ部の底面の前記実装エリアに実装された発光素子を具備することを特徴とする発光素子モジュールを提供する。
図1は、本形態例の発光素子モジュールを示す断面図であり、図2は、本形態例の発光素子実装用基板を示す断面図である。
なお、図1に示す発光素子モジュール10の構造では、ホーロー基板11の上面に電極17、18が露出する構造となるが、その露出した部分に電気絶縁を確保するため、樹脂などの電気絶縁体を配しても良い。
また、封止樹脂19の上方または発光素子モジュール10全体の上方に、必要に応じて樹脂やガラスなどの透明媒質からなるレンズ体を組み合わせることもできる。
1.5mm厚の低炭素鋼の条体を縦10mm×横10mmの寸法に裁断し、ドリルあるいは金属プレス加工により反射カップ部14を形成した。反射カップ部14の寸法は、深さを0.6mm、底面14bの直径をφ2.1mm、側面14aの傾斜角度を45°とした。加工後の金属板の表面をガラスで被覆してホーロー層13を設けることによりホーロー基板11を作製した。ホーロー層13の形成は以下の方法で行った。
放熱性の評価は、以下のとおり行った。
発光素子15に電力供給を行うための電極を作製し、図1に示す電極構造となるように銀ペーストを塗布し、その後焼き付けてホーロー基板11を作製した。次に、青色発光素子(Cree社製、XB900)を銀ペーストにより基板上の電極17にダイボンド(図示略)を用いて接続し、さらに、発光素子15に対向する電極18に金線からなるワイヤボンド16を用いて接合した。その後、反射カップ部14内に、上部が表面張力で十分盛り上がるまで熱硬化性のエポキシ樹脂を入れ、硬化させて封止樹脂19とした。以上により、発光素子モジュール10を作製した。
まず、発光素子モジュール10を一定温度の状態に放置し、低い電流値(今回は10mA)で1秒後の電圧値を測定した。ここで低い電流値とした理由は、高い電流を通電すると、素子自体の発熱により雰囲気温度と素子自体の温度が加算されてしまうためである。この方法により、複数の雰囲気温度に対して電圧値を測定し、グラフ化した。
雰囲気温度を室温(25℃)とし、そのとき350mAの電流を1時間通電し、その後10mAまで急激に電流値を落とした後の電圧値を測定した。この電圧値を予め作製しておいた電圧値と温度との関係を示す上記グラフと照合し、電圧値から換算した温度を発光素子の温度(A)とした。さらに、基板裏面の温度(B)を熱電対により同時に測定した。熱抵抗値は、発光素子と基板裏面の温度差(A−B)を、投入した電力(電流×電圧)で割ることにより求めた。
ホーロー基板11の反射カップ部14を設けた側の全面に銀ペーストを塗布し、焼成して電気絶縁性評価用の基板を作製した。この評価用基板の両面に電極を接続し、1000Vの直流電流を通電して耐圧試験を行った。この耐圧試験によって電気絶縁性を保った場合にOK、電気絶縁性を保てなかった場合にNGと評価した。
発光素子15の実装に必要なエリアを、反射カップ部14の底面14bの中央の位置で1,000μm角とし、そのエリア内におけるホーロー層13の高さの最大値−最小値を記録した。高さの最大値と高さの最小値との差の絶対値(高低差)が10μm以内であるときにOK、高低差が10μmを超えた場合にNGと評価した。
以上の評価から、反射カップ部14を有する発光素子実装用ホーロー基板11のホーロー層13の厚さは、30〜100μmの範囲が適当であることを確認した。
なお、電気絶縁性の評価のための耐圧試験後、NGと評価された評価用基板を調査したところ、部分的に内部の鋼板が露出していることを確認した。このことから、耐圧試験で不合格になったサンプルは、目標としたホーロー層の膜厚が薄すぎたため、部分的にガラスが付着しなかったものということができる。また、本発明においては、上述したように、反射カップ部14の底面14bの平坦性の観点から、ホーロー層13の厚さを30μm〜50μmの範囲内とすることが望ましい。
Claims (2)
- 発光素子から発する光を所定方向に向けて反射する反射カップ部が形成された金属基材と、この金属基材の表面を被覆するホーロー層とを有する発光素子実装用基板であって、
前記ホーロー層の厚さが30μm〜50μmの範囲内であって、大気中でガラス粉末を焼成したガラスからなり、前記反射カップ部の底面の直径が2.1mm以下で、前記底面上に形成されたホーロー層の表面には、前記反射カップ部の底面の中央の位置で1,000μm角のエリア内におけるホーロー層の高低差が10μm以内である、発光素子を実装するための平坦な実装エリアが確保されていることを特徴とする発光素子実装用基板。 - 請求項1に記載の発光素子実装用基板と、この発光素子実装用基板の反射カップ部の底面の前記実装エリアに実装された発光素子を具備することを特徴とする発光素子モジュール。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005167493A JP4091063B2 (ja) | 2005-06-07 | 2005-06-07 | 発光素子実装用基板および発光素子モジュール |
KR1020107021799A KR101132422B1 (ko) | 2005-06-07 | 2006-06-02 | 발광소자 실장용 기판 및 발광소자 모듈 |
PCT/JP2006/311098 WO2006132150A1 (ja) | 2005-06-07 | 2006-06-02 | 発光素子実装用基板および発光素子モジュール |
KR1020077028937A KR101132421B1 (ko) | 2005-06-07 | 2006-06-02 | 발광소자 실장용 기판 및 발광소자 모듈 |
CN200680019591A CN100580962C (zh) | 2005-06-07 | 2006-06-02 | 发光元件安装用基板及发光元件模块 |
EP06747128.4A EP1890342A4 (en) | 2005-06-07 | 2006-06-02 | SUBSTRATE FOR ILLUMINATED ELEMENT INSTALLATION AND LUMINAIRE ELEMENT MODULE |
TW095119864A TWI309479B (en) | 2005-06-07 | 2006-06-05 | Substrate for mounting light emitting element and light emitting element module |
US11/951,706 US7537359B2 (en) | 2005-06-07 | 2007-12-06 | Substrate for mounting light-emitting element and light-emitting element module |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2005167493A JP4091063B2 (ja) | 2005-06-07 | 2005-06-07 | 発光素子実装用基板および発光素子モジュール |
Publications (2)
Publication Number | Publication Date |
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JP2006344691A JP2006344691A (ja) | 2006-12-21 |
JP4091063B2 true JP4091063B2 (ja) | 2008-05-28 |
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JP2005167493A Expired - Fee Related JP4091063B2 (ja) | 2005-06-07 | 2005-06-07 | 発光素子実装用基板および発光素子モジュール |
Country Status (7)
Country | Link |
---|---|
US (1) | US7537359B2 (ja) |
EP (1) | EP1890342A4 (ja) |
JP (1) | JP4091063B2 (ja) |
KR (2) | KR101132421B1 (ja) |
CN (1) | CN100580962C (ja) |
TW (1) | TWI309479B (ja) |
WO (1) | WO2006132150A1 (ja) |
Families Citing this family (16)
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KR100835063B1 (ko) * | 2006-10-02 | 2008-06-03 | 삼성전기주식회사 | Led를 이용한 면광원 발광장치 |
WO2008111504A1 (ja) | 2007-03-12 | 2008-09-18 | Nichia Corporation | 高出力発光装置及びそれに用いるパッケージ |
JP5167977B2 (ja) * | 2007-09-06 | 2013-03-21 | 日亜化学工業株式会社 | 半導体装置 |
US20090236811A1 (en) * | 2008-03-19 | 2009-09-24 | Jon Scott Lewis | Skateboard Riser with Integrated LED Light |
CN102130286B (zh) * | 2009-02-19 | 2013-03-20 | 光宝电子(广州)有限公司 | 发光二极管的封装结构及封装方法 |
KR20120124387A (ko) * | 2010-01-28 | 2012-11-13 | 아사히 가라스 가부시키가이샤 | 발광 소자 탑재용 기판, 그 제조 방법 및 발광 장치 |
WO2012036132A1 (ja) * | 2010-09-17 | 2012-03-22 | 旭硝子株式会社 | 発光素子搭載用基板および発光装置 |
JP5962102B2 (ja) * | 2011-03-24 | 2016-08-03 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
DE102011086370A1 (de) * | 2011-11-15 | 2013-05-16 | Tridonic Gmbh & Co Kg | LED-Modul |
DE102011086365A1 (de) * | 2011-11-15 | 2013-05-16 | Tridonic Gmbh & Co Kg | LED-Modul |
CN102437270A (zh) * | 2011-12-09 | 2012-05-02 | 陕西科技大学 | 一种led集成封装用散热支架及其制备方法 |
JP5868269B2 (ja) * | 2012-06-19 | 2016-02-24 | シチズンホールディングス株式会社 | 半導体発光素子実装用基板および半導体発光素子実装体 |
EP2919286A4 (en) | 2012-11-06 | 2016-05-11 | Ngk Insulators Ltd | SUBSTRATE FOR LIGHT-EMITTING DIODES |
CN107705713B (zh) * | 2017-10-13 | 2019-12-27 | 上海天马微电子有限公司 | 一种显示面板和显示装置 |
WO2019230826A1 (ja) * | 2018-05-29 | 2019-12-05 | 京セラ株式会社 | 電子素子搭載用基板、電子装置および電子モジュール |
CN116449605B (zh) * | 2023-04-19 | 2024-08-06 | 惠科股份有限公司 | 背光模组及显示设备 |
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DE3128187A1 (de) | 1981-07-16 | 1983-02-03 | Joachim 8068 Pfaffenhofen Sieg | Opto-elektronisches bauelement |
JPS599982A (ja) * | 1982-07-08 | 1984-01-19 | Sumitomo Electric Ind Ltd | 連続組立発光ダイオ−ド |
JPS6299166A (ja) * | 1985-10-26 | 1987-05-08 | Ricoh Co Ltd | 光書込みヘツド |
JPS6284942U (ja) | 1985-11-19 | 1987-05-30 | ||
JPS6427291A (en) * | 1986-05-02 | 1989-01-30 | Tdk Corp | Thin-film electronic device |
JPS62261192A (ja) * | 1986-05-08 | 1987-11-13 | ティーディーケイ株式会社 | 薄膜電子回路デバイス |
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JP4037404B2 (ja) * | 2004-11-19 | 2008-01-23 | 株式会社フジクラ | 発光素子実装用基板とその製造方法 |
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2005
- 2005-06-07 JP JP2005167493A patent/JP4091063B2/ja not_active Expired - Fee Related
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2006
- 2006-06-02 WO PCT/JP2006/311098 patent/WO2006132150A1/ja active Application Filing
- 2006-06-02 KR KR1020077028937A patent/KR101132421B1/ko not_active IP Right Cessation
- 2006-06-02 CN CN200680019591A patent/CN100580962C/zh not_active Expired - Fee Related
- 2006-06-02 EP EP06747128.4A patent/EP1890342A4/en not_active Withdrawn
- 2006-06-02 KR KR1020107021799A patent/KR101132422B1/ko not_active IP Right Cessation
- 2006-06-05 TW TW095119864A patent/TWI309479B/zh not_active IP Right Cessation
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Also Published As
Publication number | Publication date |
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EP1890342A1 (en) | 2008-02-20 |
EP1890342A4 (en) | 2014-08-20 |
TWI309479B (en) | 2009-05-01 |
CN100580962C (zh) | 2010-01-13 |
KR101132421B1 (ko) | 2012-04-03 |
CN101189737A (zh) | 2008-05-28 |
TW200644301A (en) | 2006-12-16 |
WO2006132150A1 (ja) | 2006-12-14 |
KR101132422B1 (ko) | 2012-04-03 |
US7537359B2 (en) | 2009-05-26 |
KR20100111329A (ko) | 2010-10-14 |
JP2006344691A (ja) | 2006-12-21 |
US20080130290A1 (en) | 2008-06-05 |
KR20080017348A (ko) | 2008-02-26 |
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