JP4088291B2 - Metal bonding method - Google Patents

Description

The present invention relates to a metal-to-metal joining method using a spiral contact, and a metal that functions to assist joining by generating a new surface by removing a surface oxide film by causing a corner portion of the spiral contact to become a local high pressure. The present invention relates to a metal-to-metal bonding method in which the bonding strength between a spiral contact and a connection terminal is improved by inter-bonding.

As a conventional technique, an ultrasonic bonding method using ultrasonic vibration is known. This ultrasonic bonding method removes the metal surface layer by ultrasonic vibration, further promotes the generation of frictional heat by pressure load, etc., and diffuses the atoms near the contact interface of the metal foil, thereby joining the metal foils Is realized.
In this ultrasonic bonding method, no separate member such as an adhesive is required, and the processing time is as short as 0.5 seconds. Therefore, the cost of connection processing can be greatly reduced. Further, since the load pressure is small, the deformation of the metal foil is small. Further, since the bonding method is based on the above principle, there is an advantage that it can be applied to the bonding between metals such as aluminum whose surface is covered with an insulator called an oxide film.

  However, even in this ultrasonic bonding method, there is a problem that sufficient mechanical strength cannot be obtained by bonding metal foils having a thickness of 50 μm or less. Therefore, an ultrasonic bonding method capable of bonding extremely thin metal foils with sufficiently high mechanical strength and an ultrasonic welding tool suitable for the method are disclosed (for example, see Patent Document 1).

  Also, a multilayer wiring board in which metal plating is performed on one side of copper and a double-sided conductor-forming film on which the other side is subjected to metal plating is laminated in multiple layers, and metal bonding is performed at a temperature of 300 to 350 ° C. and a pressure of 10 to 20 MPa. An interlayer adhesion method is disclosed (for example, Patent Document 2).

In addition, the present inventor has disclosed a spiral contactor (spiral contactor) formed in a spiral shape as a contact corresponding to a high density of spherical connection terminals (also called balls, solder balls, or bumps) of a semiconductor device. (For example, refer to Patent Document 3).
FIG. 8 shows the spiral contactor 22, (a) is a plan view showing the spiral contactor 1 in which a plurality of spiral contactors 22 are arranged, and (b) in FIG. 8 is A shown in (a). It is sectional drawing of a -A line.
As shown in FIG. 8 (a), the spiral contact 22 has a spiral contact 22 having a spiral shape and a spiral shape in plan view, and contacts the spherical connection terminal on the insulating substrate 6. In this case, the spherical connection terminal 17 (see FIG. 9) is provided in a deformable manner corresponding to the shape of the spherical connection terminal 17 (see FIG. 9), and is electrically connected to the semiconductor device 8 (see FIG. 9), which is an electronic component. Yes.

FIG. 9 is a cross-sectional view showing a state in which the spherical connection terminal 17 of the semiconductor device 8 which is an electronic component is pressed against the conventional spiral contact 22.
As shown in FIG. 9, the spiral contact 22 slides while the corner 22 a of the spiral contact 22 is pressed against the spherical surface of the spherical connection terminal 17, and an oxide film on the spherical surface of the spherical connection terminal 17. Can be energized.
Note that the pitch of the arrangement of the spiral contacts 22 is 0.5 mm.
JP 2000-301356 A (paragraphs 0006 to 0013, FIGS. 1 to 3) JP-A-8-316641 (paragraphs 0008 to 0013, FIGS. 1 to 3) JP 2002-175859 A (paragraphs 0007 to 0028 and FIGS. 1 to 4)

  However, this ultrasonic bonding method has a problem that an ultrasonic device for generating ultrasonic waves is required. In addition, there has been a problem that vibration caused by ultrasonic waves has an adverse effect on a high-precision manufacturing method with a fine size. Furthermore, the conventional metal-to-metal bonding has a problem that the temperature is high and the pressure is high.

  Therefore, the present invention uses a spiral contact, and does not require an ultrasonic device, and is necessary for maintaining a metal-to-metal junction by fusing metals between atoms with a low temperature and a small applied pressure. It is an object of the present invention to provide an intermetallic joining method that has strength and can be joined with high accuracy.

Intermetallic bonding method according to claim 1, formed from a metal, a spiral contactor of one electronic component which is formed in a spiral (2), made of metal, the spiral contacts (2) An intermetallic joining method in which a connection terminal of the other electronic component facing each other is fused by intermetallic joining, and when the spiral contact (2) is pressed, the spiral contact (2) The corner (2a) slides in contact, removes the surface oxide film of the connection terminal and comes into contact with the new surface, the pressing force is 0.05 to 1 N, the temperature is 20 to 250 ° C., the pressing time Is fused in 1 to 3 minutes to perform intermetallic bonding.

  The invention according to claim 2 is the intermetallic joining method according to claim 1, wherein the connection terminal to be fused to the spiral contact (2) is a polygonal pyramid connection terminal (11), When the spiral contact (2) is pressed against the ridge line (11a) of the polygonal pyramid connection terminal (11), the corner (2a) of the spiral contact (2) slides while contacting. The metal-to-metal bonding is performed in a state in which the ridge line (11a) of the polygonal pyramidal connection terminal (11) is cut.

  The invention according to claim 3 is the intermetallic joining method according to claim 1, wherein the connection terminal to be fused to the spiral contact (2) is a spherical connection terminal (12). When the spiral contact (2) is pressed against the spherical surface (12a) of the connection terminal (12), the corner (2a) of the spiral contact (2) slides while being in contact with the spherical contact terminal. (12) The metal-to-metal bonding is performed with the oxide film cut.

  The invention according to claim 4 is the metal-to-metal joining method according to claim 1, wherein the connection terminal to be fused to the spiral contact (2) is a pad-like connection terminal (13). When the spiral contact (2) is pressed against the contact surface (13a) of the pad-like connection terminal (13), the corner (2a) of the spiral contact (2) slides while contacting. The metal-to-metal bonding is performed while being cut into the pad-like connection terminal (13).

The invention according to claim 5 is the intermetallic joining method according to claim 4, wherein a plurality of convex portions (2b) are provided on the upper surface of the spiral contact (2). To do.

The invention according to claim 6 is the intermetallic bonding method according to any one of claims 1 to 4, wherein the material of the spiral contact (2) is Ni (nickel), Cu (copper). ), and an alloy thereof, the material of the connection terminal is Ni, Au (gold), Al (aluminum Niu beam), Cu (copper), Sn (tin), Ag (silver), and their alloys It is either.

According to the first aspect of the present invention, the spiral contact (2) of one electronic component formed from a metal and formed in a spiral shape is opposed to the spiral contact (2) formed from a metal. In the intermetallic joining method, the connecting terminal of the other electronic component is fused by intermetallic joining, and when the corner (2a) of the spiral contact (2) is pressed, the corner (2a) is connected. The sliding force is in contact with the terminal, and the pressing force is 0.05 to 1 N, the temperature is 20 to 250 ° C., the pressing time is 1 to 3 minutes, and the metal-to-metal bonding is performed. By performing, it joins by low temperature and a small applied pressure. As a result, there are no contact points, and the reliability of the electronic device is greatly improved. Further, the bonding strength is improved and reliable energization can be performed.

  According to the second aspect of the present invention, the connection terminal to be fused to the spiral contact (2) is a polygonal pyramidal connection terminal (11), and the ridge line (11a) of the polygonal pyramidal connection terminal (11). When the spiral contact (2) is pressed against the metal, the corner (2a) slides while contacting, and the metal-to-metal bonding is performed with the ridge line (11a) of the polygonal pyramid connection terminal (11) cut. Thus, reliable energization can be performed. In this way, rotation is applied by the deflection of the spiral contact (2), and the ridgeline (11a) is slid, so that it easily bites into the ridgeline (11a). The contact with the corner (2a) of the contact (2) causes stress concentration, and further, metal-to-metal bonding can be performed in a cut state.

  According to the invention of claim 3, the connection terminal to be fused to the spiral contact (2) is a spherical connection terminal (12), and the spherical surface (12a) of the spherical connection terminal (12) has a spiral shape. When the contact (2) is pressed, the corner (2a) slides while contacting, and the metal-to-metal bonding is performed with the oxide film of the spherical connection terminal (12) cut, so that reliable energization is performed. be able to.

  According to the invention of claim 4, the connection terminal to be fused to the spiral contact (2) is the pad connection terminal (13), and the contact surface (13a) of the pad connection terminal (13). When the spiral contact (2) is pressed against the corner, the corner (2a) is slid while contacting, and the metal-to-metal bonding is performed in a state of being cut into the pad-like connection terminal (13). Can be performed.

  According to the invention which concerns on Claim 5, even if it is a pad-shaped connection terminal (13), the spiral contact (2) is provided with the some convex part (2b) on the upper surface. Therefore, reliable energization can be performed by performing metal-to-metal bonding.

The invention according to claim 6 is the intermetallic joining method according to any one of claims 1 to 4, wherein the material of the spiral contact (2) is Ni (nickel), Cu (Copper) and alloys thereof, and the connection terminals are made of Ni, Au (gold), Al (aluminum), Cu (copper), Sn (tin), Ag (silver), and alloys thereof. It is either.
The material of the spiral contact (2) is preferably Ni, Cu and their alloys, and there are 6 types of materials for the connection terminals, that is, any of Al, Ni, Au, Cu, Sn, Ag and their alloys. By doing so, these metals have a large self-diffusion coefficient, the metals easily melt together, and the proximity of atoms by heat is easy, so there is no need for an ultrasonic device, and at a low temperature and a small applied temperature. Provided is a metal-to-metal bonding method in which metals are fused between atoms by pressure and can be bonded with sufficiently high mechanical strength and high accuracy.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
<First embodiment>
FIG. 1 shows an inter-metal joining method according to a first embodiment of the present invention, wherein (a) is a cross-sectional view before joining with a convex spiral contactor and a polygonal pyramid connection terminal.
As shown in FIG. 1A, a convex spiral contact 2 is formed on the upper surface of an insulating substrate 6 that is an electronic component, and a plurality of spiral contacts 2 are arranged in a grid pattern. (See FIG. 8A).
As shown in FIG. 8A, the shape of the spiral contact 2 is formed by a convex spiral body (spiral), and is formed so that the width becomes narrower from the root to the tip. The spiral contact 2 is similar to the spiral contact 22 described above. For example, in the case of a fishing rod, the spiral contact 2 is made thinner as it goes to the tip, thereby dispersing bending stress and preventing breakage. In the same manner as described above, the width of the convex spiral contactor 2 is narrowed as it goes to the tip, thereby preventing the concentration of bending stress and distributing the bending stress. The spiral contact 2 is formed by metal plating, and corners 2a and 2a at both ends, which are characteristic of metal plating, are acute angles.

A through hole 3 is formed in the insulating substrate 6 which is an electronic component, and the convex spiral contact 2 is arranged so as to cover the through hole 3. Copper plating 4 is applied to the inner peripheral surface of the through hole 3, and a conductive terminal is provided in the connection portion 5 on the back surface.
On the lower surface 8 a of the semiconductor device 8, which is an electronic component, a polygonal pyramidal connection terminal 11 is arranged in accordance with the arrangement of the through hole 3 and the convex spiral contact 2. Here, the polygonal pyramid-shaped connection terminal 11 is a quadrangular pyramid, but it may be a triangular pyramid, a pentagonal pyramid, a hexagonal pyramid, an octagonal pyramid, a ten-hexagonal pyramid, or a cone with an infinite polygon. Absent.

FIG.1 (b) is sectional drawing of the BB line shown to (a). As shown in FIG. 1B, when viewed from the bottom, the polygonal pyramidal connection terminal 11 forms a pyramid-like square pyramid, and the four pyramids 11a, 11a, 11a, 11a form a quadrangular pyramid. It is configured.
The four ridge lines 11a, 11a, 11a, and 11a are wound so that the corner 2a of the convex spiral contact 2 intersects. Thus, several places are joined by one press. That is, when the corner 2a of the spiral contact 2 presses the ridge line 11a formed by the inclined surfaces of the polygonal connection terminals, the corner 2a bites into the corner. In this case, stress concentration occurs where the corner of the ridge line 11a hits the corner 2a, and further, biting is easily caused by sliding by rotation. Accordingly, the biting condition is preferably one of a hard metal and the other a soft metal rather than soft metals.

  FIG.1 (c) is sectional drawing after joining. As shown in FIG.1 (c), the corner | angular line 2a of the convex spiral contact 2 bites into the ridgeline 11a of the polygonal-pyramidal connection terminal 11, and it is wound so that it may cross | intersect. The material of the spiral contact 2 is, for example, a copper (Cu) foil plated with nickel (Ni), and the material of the polygonal pyramidal connection terminal 11 is nickel (Ni). When the nickel copper polygonal connection terminal 11 presses the nickel spiral contact 2, the corner 2 a of the nickel spiral contact 2 contacts the ridge line 11 a of the copper polygonal connection terminal 11 and rotates. While sliding, the ridge line 11a of the polygonal pyramidal connection terminal 11 is cut, and the copper polygonal pyramidal connection terminal 11 and the nickel spiral contact 2 are joined between the metals. That is, the corner portion of the spiral contact becomes a local high pressure and the surface oxide film is removed, thereby creating a new surface and assisting the joining, thereby joining the metals.

The pressing time is 1 to 3 minutes, and another condition for performing metal-to-metal bonding, and the force for pressing the connection terminal is 0.05 to 1 N (0.005 to 0.1 kgf). The upper limit jumps to 0.5 to 100 MPa (5 to 1000 kgf / cm ² ). This is because, as shown in FIG. 1 (b), the contact portion is, for example, only the ridge line 11a portion of the quadrangular pyramid, and the contact area is very small. .
Moreover, although pressing time was 1-3 minutes, when setting temperature as low as 20 degreeC of normal temperature and making force low, it has also been confirmed that it takes about 48 hours. When the present invention is applied to a connector, the time (1 to 3 minutes) required for the metal-to-metal joining is not a problem, so this time may be longer. The reason is that the same state is maintained after joining the product after the product, so that the electrical connection is made as a contact at first, and then the electrical connection is made in the state where the metal is joined. Because it becomes.

Here, the atomic level mechanism of the intermetallic junction will be described.
In order to produce an intermetallic junction, it is necessary to bring the nuclei into a free electron sea so that the free electrons can be shared. As the driving source, pressing force and atomic diffusion (heat: temperature and time) are required.
As for the ease of melting of metals, those having the same crystal structure are more likely to dissolve in each other. For example, face-centered cubic (FCC), body-centered cubic (BCC), or dense hexagonal (HCP) may be used.
Further, in the proximity of atoms due to heat, the atoms fluctuate due to thermal energy, and atoms move in the metal with the help of vacancies and the like. In this case, the atoms of the metal move inside each other due to the diffusion phenomenon of atoms in which one metal moves to the other side through the surface. A metal having a large self-diffusion coefficient is preferred. The temperature is preferably higher as long as the oxide film formed on the surface is removed by the corners of the spiral contact.

Further, the proximity by the pressure between atoms is a cold welding method in which the atomic spacing between metals is brought closer to the junction by the pressure and brought into the junction. In this ringing phenomenon, when metal atoms approach an angstrom distance, free electrons become common and interact with atoms at crystal lattice points to bond atoms. This is possible even at room temperature. However, as shown in this ringing phenomenon, there is a possibility of coupling just by applying a pressing force of several 0.1 MPa for a few seconds under the condition that flatness is ensured, but since there is no diffusion, Move away.
As a result, when one of the metal materials is Ni, Cu, or an alloy thereof, the other metal material is selected from these six types, for example, Ni, Au, Al, Cu, Sn, from the mechanical strength of the bonding strength. , Ag and their alloys are preferred.

  FIG. 2 shows a case where spiral contacts are provided on both surfaces of the insulating substrate. FIG. 2A is a cross-sectional view before bonding, and FIG. 2B is a cross-sectional view after bonding. As shown in FIGS. 2A and 2B, by providing convex spiral contacts (also referred to as convex spiral contacts) 2 on both surfaces, a more space-saving electronic component can be provided. it can.

FIG. 3 shows a modification of the first embodiment, showing a case where a spiral contact provided with an epoxy resin is provided on an insulating substrate, (a) is a sectional view before joining, (b) It is sectional drawing after joining. The same parts as those in FIG. 1 described above are denoted by the same reference numerals and description thereof is omitted.
As shown in FIG. 3 (a), it is shown that a thermosetting epoxy resin is applied to the spiral contact of the insulating substrate. Moreover, as shown in FIG. 3B, it is shown that the epoxy resin is cured by applying heat after joining. The purpose of providing this thermosetting epoxy resin is to permanently maintain the joined state between the spiral contact and the polygonal pyramid connection terminal 11 and to seal the mechanical action of the spiral contact 2. And preventing oxidation of the joint. The difference from FIG. 1 is that a hole of the connecting portion 5 of the insulating substrate 6 is closed and a guide frame 9 is provided in order to apply a liquid epoxy resin.

<Second Embodiment>
4A and 4B show a metal-to-metal joining method according to the second embodiment, wherein FIG. 4A is a cross-sectional view before joining with the convex spiral contact 2 and the spherical connection terminal 12, and FIG. 4B is a cross-sectional view after joining. FIG.
4A and 4B, the convex spiral contact 2 is provided on one surface of the insulating substrate 6, and the spherical connection terminal 12 is provided on the lower surface 8a of the semiconductor device 8, so that the spherical connection terminal 12 is provided. When the convex spiral contact 2 is pressed, the contact spreads outward from the central portion of the convex spiral contact 2, and the spiral portion bends in a flat shape and deforms so as to embrace the ball. Since the convex spiral contact 2 is wound around the spherical connection terminal 12 in a spiral shape, the contact length is long and surely contacts, and even if foreign matter adheres, the sliding action along the spherical surface of the spherical connection terminal 12 occurs. Therefore, the foreign matter can be removed and stable energization contact can be made. The convex spiral contact 2 slides while the corner 2a of the convex spiral contact 2 is pressed against the spherical surface of the spherical connection terminal 12, and cuts an oxide film on the spherical surface of the spherical connection terminal 12. It is possible to perform reliable energization by fusing in a state and performing metal-to-metal bonding.
Thereby, a thin and space-saving electronic component can be provided.
Furthermore, by providing the convex spiral contact 2 on both surfaces of the insulating substrate 6, a more space-saving electronic component can be provided.

FIG. 5 shows a modification of the second embodiment, wherein (a) is a cross-sectional view before joining with a convex spiral contact having an epoxy resin on an insulating substrate and a spherical connection terminal, and (b) It is sectional drawing after joining. The same parts as those shown in FIG.
As shown in FIG. 5A, a thermosetting epoxy resin is applied to the spiral contact of the insulating substrate. Further, as shown in FIG. 3B, it is shown that the epoxy resin is cured by surrounding the spherical connection terminal 12 by applying heat after joining.
In this way, since the thermosetting epoxy resin surrounds and cures around the spherical connection terminal 12, it is possible to permanently maintain the bonding state between the spiral contact 2 and the spherical connection terminal 12. The mechanical action of the spiral contact 2 can be sealed and oxidation of the joint can be prevented.
Further, the difference between FIG. 5 and FIG. 3 described above is the polygonal pyramidal connection terminal 11 and the spherical connection terminal 12, but due to the difference in shape, the height of the guide frame 9 is different. As a result, there is also a difference in the amount of epoxy resin applied.

<Third Embodiment>
FIGS. 6A and 6B show a metal-to-metal joining method according to the third embodiment, wherein FIG. 6A is a cross-sectional view before joining by the convex spiral contact 2 and the pad-like connection terminal 13, and FIG. It is sectional drawing.
As shown in FIGS. 6A and 6B, a pad-like connection is provided by providing the convex spiral contact 2 on one side of the insulating substrate 6 and providing the pad-like connection terminal 13 on the lower surface 8a of the semiconductor device 8. When the terminal 13 presses the convex spiral contact 2, the contact spreads outward from the central portion of the convex spiral contact 2, and the spiral portion bends flat and comes into contact with the pad connection terminal 13. Deform. Since the convex spiral contact 2 is in spiral contact with the contact surface 13a of the pad connection terminal 13, the corner 2a of the convex spiral contact 2 is formed on the contact surface 13a of the pad connection terminal 13. It slides while being pressed, cuts the oxide film on the contact surface 13a, fuses in that state, performs metal-to-metal bonding, and enables reliable energization.
Thereby, a thinner and space-saving electronic component can be provided.
Furthermore, by providing the convex spiral contact 2 on both surfaces of the insulating substrate 6, a more space-saving electronic component can be provided.

<Fourth embodiment>
FIG. 7 shows a metal-to-metal joining method according to the fourth embodiment. FIG. 7A is a cross-sectional view of a convex spiral contact 2 having a convex portion 2b before joining with a pad-like connection terminal. (B) is sectional drawing after joining.
As shown in FIGS. 7A and 7B, a plurality of convex portions (gold stud bumps) 2 b are provided on one surface of the insulating substrate 6, and the convex spiral contact 2 is provided. By providing the pad-like connection terminal 13 on the lower surface 8a, when the pad-like connection terminal 13 presses the convex spiral contact 2, the contact spreads outward from the center of the convex spiral contact 2, and the spiral portion is Then, it bends into a flat shape and deforms so that the apex of the convex gold stud bump 2b abuts against the pad-like connection terminal 13 and is crushed. Then, the gold stud bump 2b of the convex spiral contactor 2 slides while being pressed, and the abutting surface 13a is bonded to the metal, so that reliable energization is possible.
The shape of the convex portion 2b is a conical shape, but may be a polygonal pyramid. The material is gold and is also referred to as gold stud bump 2b. Thereby, a more reliable, thinner, and space-saving electronic component can be provided.
Further, by providing the convex spiral contact 2 with the gold stud bump 2b on both surfaces of the insulating substrate 6, a more space-saving electronic component can be provided.

The present invention can be variously modified and changed within the scope of the technical idea. For example, although the material of the spiral contact (2) described in the case of the Ni (nickel), the material of the spiral contact (2) AL (Aluminum Niu beam) or, Cu (copper), or Pb ( Lead), or Ag (silver) and alloys thereof may be used. The material of the connection terminal in this case may be selected from those listed.
Further, the metal may be bonded by fusing for a long time, for example, 48 hours or more. As a result, there is contact convenience in the initial stage, and by eliminating the contact by metal permanent bonding from 48 hours, contact failure is eliminated and the reliability of electronic equipment is greatly improved. To do.
Furthermore, by utilizing this metal-to-metal joining method and applying it to the connection between electronic components, it can be used as a thin connector that is thin and unaffected by poor contact, a robust connector or socket.

1 shows a metal-to-metal joining method according to a first embodiment of the present invention, wherein (a) is a cross-sectional view before joining with a convex spiral contactor and a polygonal pyramidal connection terminal, and (b) is shown in (a). Sectional drawing of a BB line, (c) is sectional drawing after joining. 1 shows a metal-to-metal bonding method according to a first embodiment, showing a case where spiral contacts are provided on both surfaces of an insulating substrate, (a) is a cross-sectional view before bonding, and (b) is a cross-sectional view after bonding. It is. The metal-metal joining method of the modification of 1st Embodiment is shown, the case where the spiral contact which provided the epoxy resin in the insulated substrate is provided, (a) is sectional drawing before joining, (b) FIG. 3 is a cross-sectional view after joining. The intermetallic joining method of 2nd Embodiment is shown, (a) is sectional drawing before joining with a convex spiral contactor and a spherical connection terminal, (b) is sectional drawing after joining. The metal-metal joining method of the modification of 2nd Embodiment is shown, (a) is sectional drawing before joining by the convex spiral contactor which provided the epoxy resin in the insulated substrate, and the spherical connection terminal, (b) FIG. 3 is a cross-sectional view after joining. The intermetallic joining method of 3rd Embodiment is shown, (a) is sectional drawing before joining with a convex spiral contactor and a pad-shaped connection terminal, (b) is sectional drawing after joining. The metal-metal joining method of 4th Embodiment is shown, (a) arrange | positions a convex part to a convex spiral contact, and is sectional drawing before joining by a pad-shaped connection terminal, (b) is joining. FIG. The conventional spiral contactor is shown, (a) is a plan view showing a spiral contactor in which a plurality of spiral contactors are arranged, and (b) is a sectional view taken along line AA shown in (a). It is sectional drawing which shows the state which pressed the spherical connection terminal of the semiconductor device to the conventional spiral contactor.

Explanation of symbols

1 Spiral Contactor 2 Spiral Contact (Convex Spiral Contact)
2a corner
2b Convex part (gold stud bump)
3 Through-hole 4 Copper plating 5 Connection 6 Insulating substrate (electronic component)
7 Epoxy resin 8 Semiconductor devices (electronic parts)
8a Lower surface 9 Guide frame 11 Polygonal conical connection terminal 11a Ridge line 12 Spherical connection terminal (ball)
13 Pad-shaped connection terminal 13a Contact surface

Claims (6)

A spiral contact (2) of one electronic component formed of metal and formed in a spiral shape, and a connection terminal of the other electronic component formed of metal and facing the spiral contact (2). A metal-to-metal bonding method for fusing by metal-to-metal bonding,
When the spiral contact (2) is pressed, the corner (2a) of the spiral contact (2) slides while contacting, and the surface oxide film of the connection terminal is removed to contact the new surface. In addition, the metal-to-metal bonding method is characterized in that the pressing force is 0.05 to 1 N, the temperature is 20 to 250 ° C., the pressing time is 1 to 3 minutes, and the metal-to-metal bonding is performed.   The connection terminal to be fused to the spiral contact (2) is a polygonal pyramid connection terminal (11), and the spiral contact (2) is connected to the ridge line (11a) of the polygonal cone connection terminal (11). Is pressed so that the corner (2a) of the spiral contact (2) slides in contact with each other, and the ridge line (11a) of the polygonal pyramidal connection terminal (11) is cut, and the metal-to-metal bonding is performed. The metal-to-metal joining method according to claim 1, wherein:   The connection terminal to be fused to the spiral contact (2) is a spherical connection terminal (12), and the spiral contact (2) is pressed against the spherical surface (12a) of the spherical connection terminal (12). As a result, the corner (2a) of the spiral contact (2) slides while contacting, and the metal film is bonded in a state where the oxide film of the spherical connection terminal (12) is removed and in contact with the new surface. The metal-to-metal joining method according to claim 1.   The connection terminal to be fused to the spiral contact (2) is a pad connection terminal (13), and the spiral contact (2) is placed on the contact surface (13a) of the pad connection terminal (13). Is pressed, the corner (2a) of the spiral contact (2) slides in contact, and the pad-shaped connection terminal (13) is in contact with the new surface to perform metal-to-metal bonding. The metal-to-metal joining method according to claim 1. The intermetal bonding method according to claim 4, wherein a plurality of convex portions (2b) are provided on the upper surface of the spiral contact (2). The material of the spiral contact (2) is Ni (nickel), Cu (copper), and an alloy thereof, the material of the connection terminal is Ni, Au (gold), Al (aluminum Niu beam), Cu ( It is any one of copper), Sn (tin), Ag (silver), and those alloys, The intermetallic joining method as described in any one of Claims 1-4 characterized by the above-mentioned.

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