JP3888351B2 - EL device and hole-transporting condensate used in the production thereof - Google Patents
EL device and hole-transporting condensate used in the production thereof Download PDFInfo
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- JP3888351B2 JP3888351B2 JP2003414670A JP2003414670A JP3888351B2 JP 3888351 B2 JP3888351 B2 JP 3888351B2 JP 2003414670 A JP2003414670 A JP 2003414670A JP 2003414670 A JP2003414670 A JP 2003414670A JP 3888351 B2 JP3888351 B2 JP 3888351B2
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- light emitting
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- 238000004519 manufacturing process Methods 0.000 title description 3
- 239000000463 material Substances 0.000 claims description 37
- -1 tertiary amine compound Chemical class 0.000 claims description 27
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 16
- 150000001728 carbonyl compounds Chemical group 0.000 claims description 13
- 125000003118 aryl group Chemical group 0.000 claims description 12
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 11
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 11
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 11
- 125000000217 alkyl group Chemical group 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 10
- 238000009833 condensation Methods 0.000 claims description 10
- 230000005494 condensation Effects 0.000 claims description 10
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 10
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 9
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 claims description 8
- 125000003545 alkoxy group Chemical group 0.000 claims description 7
- 125000003944 tolyl group Chemical group 0.000 claims description 7
- 125000005259 triarylamine group Chemical group 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- IVRMZWNICZWHMI-UHFFFAOYSA-N azide group Chemical group [N-]=[N+]=[N-] IVRMZWNICZWHMI-UHFFFAOYSA-N 0.000 claims description 2
- VQXINLNPICQTLR-UHFFFAOYSA-N carbonyl diazide Chemical group [N-]=[N+]=NC(=O)N=[N+]=[N-] VQXINLNPICQTLR-UHFFFAOYSA-N 0.000 claims description 2
- HSVFKFNNMLUVEY-UHFFFAOYSA-N sulfuryl diazide Chemical group [N-]=[N+]=NS(=O)(=O)N=[N+]=[N-] HSVFKFNNMLUVEY-UHFFFAOYSA-N 0.000 claims description 2
- 125000000524 functional group Chemical group 0.000 claims 2
- 239000011203 carbon fibre reinforced carbon Substances 0.000 claims 1
- 150000002894 organic compounds Chemical class 0.000 claims 1
- 239000010410 layer Substances 0.000 description 116
- 238000002347 injection Methods 0.000 description 25
- 239000007924 injection Substances 0.000 description 25
- 239000010408 film Substances 0.000 description 23
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 21
- 239000000126 substance Substances 0.000 description 21
- 239000000758 substrate Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 14
- 230000005525 hole transport Effects 0.000 description 13
- 238000007789 sealing Methods 0.000 description 11
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 10
- 239000011521 glass Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 230000006870 function Effects 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- 238000007740 vapor deposition Methods 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical group OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 239000007983 Tris buffer Substances 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000004132 cross linking Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 239000003960 organic solvent Substances 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical compound N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000000499 gel Substances 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 125000001424 substituent group Chemical group 0.000 description 4
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000012954 diazonium Substances 0.000 description 3
- 230000009477 glass transition Effects 0.000 description 3
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical class [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 3
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 2
- MGADZUXDNSDTHW-UHFFFAOYSA-N 2H-pyran Chemical compound C1OC=CC=C1 MGADZUXDNSDTHW-UHFFFAOYSA-N 0.000 description 2
- GOLORTLGFDVFDW-UHFFFAOYSA-N 3-(1h-benzimidazol-2-yl)-7-(diethylamino)chromen-2-one Chemical compound C1=CC=C2NC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 GOLORTLGFDVFDW-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- 229910021536 Zeolite Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- ANAJSSMBLXCCSM-UHFFFAOYSA-K aluminum;4-(4-cyanophenyl)phenolate Chemical compound [Al+3].C1=CC([O-])=CC=C1C1=CC=C(C#N)C=C1.C1=CC([O-])=CC=C1C1=CC=C(C#N)C=C1.C1=CC([O-])=CC=C1C1=CC=C(C#N)C=C1 ANAJSSMBLXCCSM-UHFFFAOYSA-K 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 239000000292 calcium oxide Substances 0.000 description 2
- 235000012255 calcium oxide Nutrition 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 125000001309 chloro group Chemical group Cl* 0.000 description 2
- 238000010549 co-Evaporation Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- VPUGDVKSAQVFFS-UHFFFAOYSA-N coronene Chemical compound C1=C(C2=C34)C=CC3=CC=C(C=C3)C4=C4C3=CC=C(C=C3)C4=C2C3=C1 VPUGDVKSAQVFFS-UHFFFAOYSA-N 0.000 description 2
- 239000002274 desiccant Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-O diazynium Chemical compound [NH+]#N IJGRMHOSHXDMSA-UHFFFAOYSA-O 0.000 description 2
- 125000001664 diethylamino group Chemical group [H]C([H])([H])C([H])([H])N(*)C([H])([H])C([H])([H])[H] 0.000 description 2
- 125000002147 dimethylamino group Chemical group [H]C([H])([H])N(*)C([H])([H])[H] 0.000 description 2
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 2
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 229920006255 plastic film Polymers 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 2
- 229920000767 polyaniline Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 238000001226 reprecipitation Methods 0.000 description 2
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 150000003384 small molecules Chemical class 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 2
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000010457 zeolite Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- YGLVWOUNCXBPJF-UHFFFAOYSA-N (2,3,4,5-tetraphenylcyclopenta-1,4-dien-1-yl)benzene Chemical compound C1=CC=CC=C1C1C(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)C(C=2C=CC=CC=2)=C1C1=CC=CC=C1 YGLVWOUNCXBPJF-UHFFFAOYSA-N 0.000 description 1
- JCXLYAWYOTYWKM-UHFFFAOYSA-N (2,3,4-triphenylcyclopenta-1,3-dien-1-yl)benzene Chemical compound C1C(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)C(C=2C=CC=CC=2)=C1C1=CC=CC=C1 JCXLYAWYOTYWKM-UHFFFAOYSA-N 0.000 description 1
- KLCLIOISYBHYDZ-UHFFFAOYSA-N 1,4,4-triphenylbuta-1,3-dienylbenzene Chemical compound C=1C=CC=CC=1C(C=1C=CC=CC=1)=CC=C(C=1C=CC=CC=1)C1=CC=CC=C1 KLCLIOISYBHYDZ-UHFFFAOYSA-N 0.000 description 1
- MUNFOTHAFHGRIM-UHFFFAOYSA-N 2,5-dinaphthalen-1-yl-1,3,4-oxadiazole Chemical compound C1=CC=C2C(C3=NN=C(O3)C=3C4=CC=CC=C4C=CC=3)=CC=CC2=C1 MUNFOTHAFHGRIM-UHFFFAOYSA-N 0.000 description 1
- UXUFLNSBRVYHQP-UHFFFAOYSA-N 3-[5-[3-(trifluoromethyl)phenyl]-2H-triazol-4-yl]phenol Chemical compound OC=1C=C(C=CC1)C1=C(N=NN1)C1=CC(=CC=C1)C(F)(F)F UXUFLNSBRVYHQP-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- ZHBOFZNNPZNWGB-UHFFFAOYSA-N 9,10-bis(phenylethynyl)anthracene Chemical compound C1=CC=CC=C1C#CC(C1=CC=CC=C11)=C(C=CC=C2)C2=C1C#CC1=CC=CC=C1 ZHBOFZNNPZNWGB-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910016569 AlF 3 Inorganic materials 0.000 description 1
- 229910016036 BaF 2 Inorganic materials 0.000 description 1
- OOQAPGNOZVHVDM-UHFFFAOYSA-N CC(C)(C)[Cu](C(C)(C)C)(C(C)(C)C)C(C)(C)C Chemical compound CC(C)(C)[Cu](C(C)(C)C)(C(C)(C)C)C(C)(C)C OOQAPGNOZVHVDM-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229940126062 Compound A Drugs 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 230000005526 G1 to G0 transition Effects 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- BEAHPPCNIBVQQD-SCICZZOKSA-N [Zn].C1([C@H](O)C[C@H](O)[C@H](O1)C)NC=1C=CC=C2C=CC=NC12.C1([C@H](O)C[C@H](O)[C@H](O1)C)NC=1C=CC=C2C=CC=NC12 Chemical compound [Zn].C1([C@H](O)C[C@H](O)[C@H](O1)C)NC=1C=CC=C2C=CC=NC12.C1([C@H](O)C[C@H](O)[C@H](O1)C)NC=1C=CC=C2C=CC=NC12 BEAHPPCNIBVQQD-SCICZZOKSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000004840 adhesive resin Substances 0.000 description 1
- 229920006223 adhesive resin Polymers 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- 150000001572 beryllium Chemical class 0.000 description 1
- 230000001588 bifunctional effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 125000000490 cinnamyl group Chemical group C(C=CC1=CC=CC=C1)* 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000005796 dehydrofluorination reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910052805 deuterium Inorganic materials 0.000 description 1
- 238000000502 dialysis Methods 0.000 description 1
- 150000001989 diazonium salts Chemical class 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- 238000002189 fluorescence spectrum Methods 0.000 description 1
- 239000007850 fluorescent dye Substances 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 229920001002 functional polymer Polymers 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Inorganic materials [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- 125000000040 m-tolyl group Chemical group [H]C1=C([H])C(*)=C([H])C(=C1[H])C([H])([H])[H] 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- YCWSUKQGVSGXJO-NTUHNPAUSA-N nifuroxazide Chemical group C1=CC(O)=CC=C1C(=O)N\N=C\C1=CC=C([N+]([O-])=O)O1 YCWSUKQGVSGXJO-NTUHNPAUSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 150000003220 pyrenes Chemical class 0.000 description 1
- RQGPLDBZHMVWCH-UHFFFAOYSA-N pyrrolo[3,2-b]pyrrole Chemical class C1=NC2=CC=NC2=C1 RQGPLDBZHMVWCH-UHFFFAOYSA-N 0.000 description 1
- 238000006862 quantum yield reaction Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 150000003873 salicylate salts Chemical class 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000013464 silicone adhesive Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical group C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(II) oxide Inorganic materials [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- HTPBWAPZAJWXKY-UHFFFAOYSA-L zinc;quinolin-8-olate Chemical compound [Zn+2].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 HTPBWAPZAJWXKY-UHFFFAOYSA-L 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
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- Electroluminescent Light Sources (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Phenolic Resins Or Amino Resins (AREA)
Description
本発明は、薄膜のエレクトロルミネセンス(以下単にELという)現象を利用したEL素子に関するものであり、薄型ディスプレイ等に利用できる。 The present invention relates to an EL element utilizing a thin film electroluminescence (hereinafter simply referred to as EL) phenomenon, and can be used for a thin display or the like.
EL素子は、発光層に用いられている蛍光体のエレクトロルミネッセンス(以下ELという)現象を利用した発光素子であり、自発光型の平面表示素子や平面光源として利用されている。EL素子のうち、蛍光体が有機物である有機薄膜EL素子は、イーストマン・コダック社のC.W.Tangらにより開発され、特開昭59−194393号公報、特開昭63−264692号公報、特開昭63−295695号公報、アプライド・フィジックス・レター第51巻第12号第913頁(1987年)、及びジャーナル・オブ・アプライドフィジックス第65巻第9号第3610頁(1989年)等に開示されている。 An EL element is a light-emitting element that utilizes the electroluminescence (hereinafter referred to as EL) phenomenon of a phosphor used in a light-emitting layer, and is used as a self-luminous flat display element or a flat light source. Among the EL elements, an organic thin film EL element whose phosphor is an organic substance is a C.I. W. Developed by Tang et al., JP-A-59-194393, JP-A-63-246492, JP-A-63-295695, Applied Physics Letter Vol. 51, No. 12, p. 913 (1987). , And Journal of Applied Physics, Vol. 65, No. 9, p. 3610 (1989).
一般に、有機薄膜EL素子は、図1に示すように透明絶縁性の基板(1)上に、陽極(2)、有機正孔注入輸送層(3)、有機発光層(4)、及び陰極(5)の順に積層されて構成され、以下に示すようにして作製される。 In general, as shown in FIG. 1, an organic thin-film EL element has an anode (2), an organic hole injection transport layer (3), an organic light emitting layer (4), and a cathode (1) on a transparent insulating substrate (1). 5) The layers are stacked in this order, and are manufactured as follows.
まず、ガラスや樹脂フィルム等の透明絶縁性の基板(1)上に、陽極(2)として、インジウムとスズとの複合酸化物(以下、ITOという)からなる透明導電膜を、蒸着法またはスパッタリング法等により形成する。次に、この陽極上に、有機正孔注入輸送層(3)として、素子を絶縁破壊し難くするためアモルファスで平滑な膜を形成できる1,1−ビス(4−ジ−p−トリルアミノフェニル)シクロヘキサン[ガラス転移温度(Tg)84℃]等の低分子芳香族第3級アミン等の有機正孔注入輸送材料からなる単層膜、または結晶質だが酸化還元に対して耐久性の高い銅フタロシアニン等をITO界面に積層した多層膜を、100nm程度以下の厚さで形成する。 First, a transparent conductive film made of a composite oxide of indium and tin (hereinafter referred to as ITO) is deposited as an anode (2) on a transparent insulating substrate (1) such as glass or resin film by vapor deposition or sputtering. Form by law etc. Next, on this anode, 1,1-bis (4-di-p-tolylaminophenyl) can be formed as an organic hole injecting and transporting layer (3) so that an amorphous and smooth film can be formed to make it difficult to break down the device. ) Single layer film made of organic hole injection / transport material such as low molecular weight aromatic tertiary amine such as cyclohexane [glass transition temperature (Tg) 84 ° C.] or crystalline but highly resistant to redox A multilayer film in which phthalocyanine or the like is laminated on the ITO interface is formed with a thickness of about 100 nm or less.
さらに、有機正孔注入輸送層(3)上に、有機発光層(4)として、トリス(8−キノリノール)アルミニウム(以下、Alqという)等の有機蛍光体膜を、100nm程度以下の厚さで、蒸着法により形成する。この有機発光層上に、陰極(5)としてMg:Ag等の合金膜を、200nm程度の厚さで、共蒸着法により形成することにより、有機薄膜EL素子が作製される。 Further, an organic phosphor film such as tris (8-quinolinol) aluminum (hereinafter referred to as Alq) is formed on the organic hole injecting and transporting layer (3) as an organic light emitting layer (4) with a thickness of about 100 nm or less. And formed by vapor deposition. An organic thin film EL element is produced by forming an alloy film of Mg: Ag or the like as a cathode (5) on the organic light emitting layer with a thickness of about 200 nm by a co-evaporation method.
以上のようにして作製される有機薄膜EL素子においては、電極間に直流低電圧を印加することにより、正孔と電子とが有機発光層に注入され、これらの再結合により発光が生じる。なお、この素子に印加する直流低電圧は、通常、20〜30V以下であり、陰極にMg:Ag合金を用いた素子では、1000cd/m2以上の輝度が得られている。有機発光層中にクマリン系、ピラン系、キナクリドン系等の蛍光量子収率の高い蛍光色素を共蒸着等の方法でドーピングすれば、ELの輝度はさらに2倍以上に高めることもできる。 In the organic thin film EL device manufactured as described above, by applying a direct current low voltage between the electrodes, holes and electrons are injected into the organic light emitting layer, and light emission is caused by recombination thereof. Note that the DC low voltage applied to this element is usually 20 to 30 V or less, and a luminance of 1000 cd / m 2 or more is obtained in an element using a Mg: Ag alloy for the cathode. If the organic light emitting layer is doped with a fluorescent dye having a high fluorescence quantum yield such as coumarin, pyran, or quinacridone by a method such as co-evaporation, the luminance of EL can be further increased by 2 times or more.
また、特開平7−65958号によると、図2に示すようにITO陽極上のN,N’−ジフェニル−N,N’−ビス(3−メチルフェニル)−1,1’−ビフェニル−4,4’−ジアミン〔以下TPDと略す;融点159〜163℃、Tg67℃〕正孔輸送層にルブレン等の発光材料をドープし、有機正孔輸送発光層(6)とし、さらにAlqを有機電子注入輸送層(7)として積層することにより、比較的安定な有機薄膜EL素子を得ている。 According to Japanese Patent Laid-Open No. 7-65958, as shown in FIG. 2, N, N′-diphenyl-N, N′-bis (3-methylphenyl) -1,1′-biphenyl-4 on the ITO anode, 4'-diamine (hereinafter abbreviated as TPD; melting point 159 to 163 ° C., Tg 67 ° C.) The hole transport layer is doped with a light emitting material such as rubrene to form an organic hole transport light emitting layer (6), and Alq is injected with organic electrons. By laminating as the transport layer (7), a relatively stable organic thin film EL element is obtained.
しかし、上述の有機薄膜EL素子に利用されている正孔輸送材料の大半は、これまで、低分子化合物が占めており、その多くはTgが100℃以下で耐熱性が低く、素子作製中の熱や駆動中の発熱によりTg付近の温度に達すると他層と混合したり、高温環境下の保存や使用により結晶化しピンホールが生じ、素子の劣化や電気短絡を引き起こしやすいものが多かった。 However, most of the hole transport materials used in the above-described organic thin film EL devices have so far been occupied by low molecular weight compounds, many of which have a Tg of 100 ° C. or lower and low heat resistance. When the temperature reaches around Tg due to heat or heat generated during driving, it is often mixed with other layers or crystallized due to storage or use in a high temperature environment to cause pinholes, which often cause device deterioration or electrical short circuit.
また、トルエン等の有機溶媒への溶解性が高いために同様の有機溶媒を用いた湿式法で膜をさらに積層するのが困難であったり、層のパターンニングが困難な問題があった。 Moreover, since the solubility to organic solvents, such as toluene, is high, there existed a problem that it was difficult to laminate | stack a film | membrane further by the wet method using the same organic solvent, or patterning of the layer was difficult.
本発明の目的は、以上で述べたように、従来の正孔注入輸送材料を用いた素子以上に耐熱性があり、電気短絡し難いEL素子及びその製造に用いる正孔輸送性縮合物を提供すること、並びに、正孔輸送性縮合物を含有する層を架橋することで耐熱性と機械的強度を増し溶媒に不溶化し、架橋した層上への湿式法による塗布を可能とし、また、正孔輸送性縮合物を含有する層のパターンニングも可能としたEL素子を提供することを目的としてなされたものである。 As described above, the object of the present invention is to provide an EL element that is more heat resistant than an element using a conventional hole injecting and transporting material and difficult to electrically short-circuit, and a hole transporting condensate used in the production thereof. In addition, by cross-linking the layer containing the hole transporting condensate, the heat resistance and mechanical strength are increased and insolubilized in the solvent, enabling application to the cross-linked layer by a wet method. The object of the present invention is to provide an EL device that enables patterning of a layer containing a hole transporting condensate.
本発明は、1つ以上のトリアリールアミン構造を含有し、かつ少なくともその2カ所のアリール基上のパラ位が水素である第3級アミン化合物とカルボニル化合物との付加縮合により得られる正孔輸送性縮合物を含有する層を設けたことを特徴とするEL素子である。 The present invention relates to a hole transport obtained by addition condensation of a tertiary amine compound containing one or more triarylamine structures and having a para-position hydrogen on at least two aryl groups and a carbonyl compound. An EL device comprising a layer containing a functional condensate.
以上示したように、本発明によると、芳香族第三級アミンとアルデヒドとの付加縮合により生成されるTgの高い正孔輸送性縮合物を用いることにより、耐熱性の高いEL素子を得ることができる。さらに、架橋基を有する正孔輸送性縮合物を用い、架橋させるとより高い耐熱性のEL素子を得ることができる。また、正孔輸送発光層として用いた場合にはマスク露光により正孔輸送発光層のパターンの形成ができる。 As described above, according to the present invention, an EL element with high heat resistance can be obtained by using a hole transporting condensate having a high Tg produced by addition condensation of an aromatic tertiary amine and an aldehyde. Can do. Furthermore, when a hole-transporting condensate having a crosslinking group is used and crosslinked, an EL element having higher heat resistance can be obtained. When used as a hole transporting light emitting layer, the pattern of the hole transporting light emitting layer can be formed by mask exposure.
以下に本発明の実施の形態を説明する。図1は、本発明におけるEL素子を、基板(1)上に陽極(2)、有機正孔注入輸送層(3)、有機発光層(4)、陰極(5)、封止層(8)の順に構成し、接着性材料(9)にて封止板(10)を接着して密封した場合の例である。 Embodiments of the present invention will be described below. FIG. 1 shows an EL device according to the present invention having an anode (2), an organic hole injecting and transporting layer (3), an organic light emitting layer (4), a cathode (5), and a sealing layer (8) on a substrate (1). This is an example in which the sealing plate (10) is adhered and sealed with an adhesive material (9).
図2は正孔注入輸送層と有機発光層を一つの層で兼ねた有機正孔輸送発光層(6)と発光層への電子注入効率を高め、または正孔の陰極への流れを抑制する効果を有する有機電子注入輸送層(7)の2層構成の場合である。 FIG. 2 shows the efficiency of electron injection into the organic hole-transporting light-emitting layer (6) and the light-emitting layer, which serves as both the hole-injecting and transporting layer and the organic light-emitting layer, or suppresses the flow of holes to the cathode. This is a case of a two-layer structure of an organic electron injecting and transporting layer (7) having an effect.
図3は、有機正孔注入輸送層が2層構成の場合であり、第1正孔注入輸送層(11)として第2正孔注入輸送層(12)と陽極の仕事関数の間のイオン化エネルギーの値を持ち、酸化還元に対して安定な材料を用いることで有機発光層(4)への正孔注入効率が向上し、EL素子の低電圧駆動と安定化が可能となる。 FIG. 3 shows a case where the organic hole injection / transport layer has a two-layer structure, and the ionization energy between the work function of the second hole injection / transport layer (12) and the anode as the first hole injection / transport layer (11). The efficiency of hole injection into the organic light-emitting layer (4) is improved by using a material having the above value and stable against oxidation and reduction, and the EL element can be driven at a low voltage and stabilized.
図4は、有機正孔注入輸送層(3)、有機正孔輸送発光層(6)、有機電子注入輸送層(7)の3層で構成した例である。 FIG. 4 shows an example in which the organic hole injecting and transporting layer (3), the organic hole transporting and emitting layer (6), and the organic electron injecting and transporting layer (7) are composed of three layers.
図5は、図4の有機正孔輸送発光層(6)を赤(R)、緑(G)、青(B)にパターン形成した例である。 FIG. 5 shows an example in which the organic hole transporting light emitting layer (6) of FIG. 4 is patterned in red (R), green (G), and blue (B).
同様の構成を基板上に陰極から逆の順に構成することも使用する材料によっては可能である。 It is possible depending on the material used to construct the same structure on the substrate in the reverse order from the cathode.
本発明におけるEL素子は、1つ以上のトリアリールアミン構造を含有し、かつ少なくともその2カ所のアリール基上のパラ位が水素である第3級アミン化合物とカルボニル化合物との付加縮合により得られる正孔輸送性縮合化合物を、望ましくは図1〜図5の有機正孔注入輸送層(3)、第1正孔注入輸送層(11)、第2正孔注入輸送層(12)、有機正孔輸送発光層(6)中の少なくとも1層以上に単独でまたは複数の材料を混合して用いられる。 The EL device according to the present invention is obtained by addition condensation of a tertiary amine compound containing one or more triarylamine structures and having at least two para groups on the aryl group being hydrogen and a carbonyl compound. Desirably, the hole transporting condensing compound may be an organic positive hole injection transport layer (3), a first positive hole injection transport layer (11), a second positive hole injection transport layer (12) of FIGS. The at least one layer in the hole transport light emitting layer (6) is used alone or in combination with a plurality of materials.
以下、さらに詳しく材料および素子の製造方法について説明する。 Hereinafter, the material and the method for manufacturing the element will be described in more detail.
基板(1)はガラスやポリエーテルスルホン等のプラスチックフィルム等の透明絶縁性材料を用いる。基板(1)には、コントラストや耐性向上のため着色したり、円偏光フィルター、多層膜反射防止フィルター、紫外線吸収フィルター、RGBカラーフィルター、蛍光波長変換フィルター、シリカコーティング層等を内外面に設けても良い。 The substrate (1) uses a transparent insulating material such as a plastic film such as glass or polyethersulfone. The substrate (1) is colored to improve contrast and resistance, and circularly polarizing filters, multilayer antireflection filters, ultraviolet absorption filters, RGB color filters, fluorescent wavelength conversion filters, silica coating layers, etc. are provided on the inner and outer surfaces. Also good.
陽極(2)は、通常、表面抵抗1〜50Ω/□、可視光線透過率80%以上の透明電極を用いる。例えば、ITO(仕事関数4.6〜4.8eV)や酸化亜鉛アルミニウムの非晶質または微結晶透明導電膜、または低抵抗化のため10nm程度の厚さの銀や銅、または銀と銅の合金をITO、インジウム亜鉛複合酸化物、酸化チタン、酸化錫等の非晶質または微結晶の透明導電膜で挟んだ構造の膜を真空蒸着やスパッタリング法等でガラスやプラスチックフィルム等の透明絶縁性の基板(1)上に形成し透明電極として用いることが望ましい。 As the anode (2), a transparent electrode having a surface resistance of 1 to 50Ω / □ and a visible light transmittance of 80% or more is usually used. For example, an amorphous or microcrystalline transparent conductive film of ITO (work function 4.6 to 4.8 eV) or zinc oxide, or silver or copper having a thickness of about 10 nm or silver and copper for reducing resistance. Transparent insulation such as glass or plastic film by vacuum deposition or sputtering method with a structure in which an alloy is sandwiched between amorphous or microcrystalline transparent conductive films such as ITO, indium zinc composite oxide, titanium oxide, tin oxide It is desirable to use it as a transparent electrode formed on the substrate (1).
単純マトリックス駆動ディスプレイに用いる場合は、透明電極のラインに接して、Cu,Al等の低抵抗金属からなる金属バスラインを設け、より低抵抗化することが望ましい。その他、金やプラチナを薄く蒸着した半透明電極やポリアニリン、ポリピロール、ポリチオフェン等の高分子を被覆した半透明電極等も用いることができる。 When used in a simple matrix drive display, it is desirable to provide a metal bus line made of a low resistance metal such as Cu or Al in contact with the transparent electrode line to further reduce the resistance. In addition, a semitransparent electrode obtained by thinly depositing gold or platinum, a semitransparent electrode coated with a polymer such as polyaniline, polypyrrole, or polythiophene can be used.
しかし、別の場合には、陽極(2)は不透明でも良い。その場合には、陽極(2)には有機正孔注入輸送層(3)を通して有機発光層(4)へ正孔注入しやすい仕事関数の値の大きい金、プラチナ、パラジウム、ニッケル等の金属板、シリコン、ガリウムリン、アモルファス炭化シリコン等の仕事関数が4.6eV以上の半導体基板、もしくはそれらの金属や半導体を絶縁性の基板(1)上に被覆した基板を用い、陰極(5)を透明電極もしくは半透明電極とする。陰極(5)も不透明であれば、有機発光層(4)の少なくとも一端が透明である必要がある。 However, in other cases, the anode (2) may be opaque. In that case, a metal plate made of gold, platinum, palladium, nickel or the like having a large work function value that facilitates hole injection into the organic light emitting layer (4) through the organic hole injection transport layer (3) in the anode (2) The cathode (5) is transparent using a semiconductor substrate such as silicon, gallium phosphide, amorphous silicon carbide or the like having a work function of 4.6 eV or more, or a substrate in which such a metal or semiconductor is coated on an insulating substrate (1). An electrode or a translucent electrode is used. If the cathode (5) is also opaque, at least one end of the organic light emitting layer (4) needs to be transparent.
次に、有機正孔注入輸送層(3)を陽極(2)上に形成する。本発明では、正孔輸送性の材料として、1つ以上のトリアリールアミン構造を含有し、かつ少なくともその2カ所のアリール基上のパラ位が水素である第3級アミン化合物とカルボニル化合物との付加縮合により得られる正孔輸送性縮合化合物を用いる。 Next, an organic hole injection transport layer (3) is formed on the anode (2). In the present invention, as a hole transporting material, a tertiary amine compound containing one or more triarylamine structures and a para amine on at least two aryl groups is hydrogen and a carbonyl compound A hole transporting condensation compound obtained by addition condensation is used.
1つ以上のトリアリールアミン骨格を含有し、かつ少なくとも2カ所のアリール基上のパラ位が水素である本発明で用いる第3級アミン化合物の具体的構造は下記化学式(1)〜(4)の正孔輸送材料や下記化学式(5)の青色正孔輸送性発光材料、下記化学式(6)の緑色正孔輸送性発光材料、下記化学式(7)〜(8)の赤色正孔輸送性発光材料で例示される。 The specific structure of the tertiary amine compound used in the present invention, which contains one or more triarylamine skeletons and in which the para position on at least two aryl groups is hydrogen, is represented by the following chemical formulas (1) to (4). Hole transporting material of the following formula, blue hole transporting light emitting material of the following chemical formula (5), green hole transporting light emitting material of the following chemical formula (6), red hole transporting light emitting of the following chemical formulas (7) to (8) Illustrated with materials.
本発明の正孔輸送性縮合物の原料として用いるカルボニル化合物は化学式9〜15で例示する。 The carbonyl compound used as a raw material of the hole transportable condensate of the present invention is exemplified by chemical formulas 9-15.
以上に例示した第3級アミン化合物とカルボニル化合物との付加縮合は、1,4−ジオキサン等の有機溶媒中で、パラ−トルエンスルホン酸等の酸を触媒として用い、50℃〜150℃程度の温度で10分〜24時間程度反応させ行う。この際、第3級アミン化合物のカルボニル化合物と反応する確率が高いフェニル基上のパラ位の水素が2カ所以上未置換である化合物を用いる。
The addition condensation of the tertiary amine compound and the carbonyl compound exemplified above is carried out using an acid such as para-toluenesulfonic acid as a catalyst in an organic solvent such as 1,4-dioxane. The reaction is carried out at a temperature for about 10 minutes to 24 hours. At this time, a compound in which two or more hydrogens at the para position on the phenyl group which are highly likely to react with the carbonyl compound of the tertiary amine compound are unsubstituted is used.
得られる正孔輸送性縮合物の具体例を以下に示す。 Specific examples of the hole transporting condensate obtained are shown below.
得られた付加縮合物の分子量は、スチレンゲルを固定層相、クロロホルムを移動相としてGPC法で求めた数平均分子量(昭和電工製標準ポリスチレン換算)が約3,000〜1,000,000程度の成分からなり、再沈殿、透析、遠心分離法等で低分子量成分を除き、10,000〜1,000,000の成分を分画することがより好ましい。また、分子鎖の末端は、メチロール基等カルボニル化合物に由来するOH基を有していても良い。 The molecular weight of the resulting addition condensate is about 3,000 to 1,000,000 as the number average molecular weight (converted to Showa Denko standard polystyrene) determined by the GPC method using styrene gel as a fixed layer phase and chloroform as a mobile phase. More preferably, the component of 10,000 to 1,000,000 is fractionated by excluding low molecular weight components by reprecipitation, dialysis, centrifugation, or the like. Moreover, the terminal of the molecular chain may have an OH group derived from a carbonyl compound such as a methylol group.
可溶性で、かつ分子量分布を高分子量側にするためには、長時間反応した場合にゲル化しないようトリアリールアミン骨格上のフェニル基上のパラ位の水素を2カ所残して、他のフェニル基上のパラ位の水素をメチル基、エチル基、イソプロピル基、t−ブチル基等のアルキル基、メトキシ基等のアルコキシ基、トリル基等のアリール基等で置換した2官能第3級アミン化合物を用い、厳密に当量のカルボニル化合物と反応させれば良い。 In order to be soluble and have a molecular weight distribution on the high molecular weight side, two hydrogens at the para position on the phenyl group on the triarylamine skeleton are left in place so that they do not gel when reacted for a long time, and other phenyl groups A bifunctional tertiary amine compound in which the hydrogen at the para position is substituted with an alkyl group such as a methyl group, an ethyl group, an isopropyl group, or a t-butyl group, an alkoxy group such as a methoxy group, or an aryl group such as a tolyl group. It is sufficient to use it and react with an exactly equivalent carbonyl compound.
トリアリールアミン骨格上のフェニル基上のパラ位の水素が3カ所以上ある場合には、3次元的な架橋構造の成分も若干含まれ、長時間の反応でゲル化する場合もある。 When there are three or more para-positioned hydrogens on the phenyl group on the triarylamine skeleton, a component having a three-dimensional cross-linking structure is also included, and the gel may be formed by a long-time reaction.
これらの本発明の正孔輸送性縮合化合物は、トリアリールアミン化合物を主鎖骨格に有し正孔輸送性能が高く、かつ、重合体であるためガラス転移温度が低分子化合物よりも高く、EL素子の耐熱性を高くできる。具体的には、化学式(16)〜(19)において、Rが水素原子の場合、Tgはそれぞれ148℃,141℃、190℃,157℃(DSC法にて、10℃/分で昇温して測定)であった。 These hole-transporting condensation compounds of the present invention have a triarylamine compound in the main chain skeleton, have high hole-transporting performance, and are a polymer, so that their glass transition temperature is higher than that of low-molecular compounds. The heat resistance of the element can be increased. Specifically, in the chemical formulas (16) to (19), when R is a hydrogen atom, Tg is 148 ° C., 141 ° C., 190 ° C., 157 ° C. Measured).
薄膜の成膜もトルエンやクロロホルム等の有機溶媒に溶かしてスピンコート法、ブレードコート法等の湿式法で容易に行うことができる。 A thin film can be easily formed by dissolving in an organic solvent such as toluene or chloroform and using a wet method such as a spin coat method or a blade coat method.
また、本発明の正孔輸送性縮合物の層中に、陽極と発光層間の仕事関数の値の段差を小さくし正孔注入効率の向上、層間の密着性向上、劣化防止、色調の調整などの目的で、他の公知の芳香族第3級アミン系材料やCuPcや塩素化銅フタロシアニン、テトラ(t−ブチル)銅フタロシアニン等の金属フタロシアニン類および無金属フタロシアニン類、キナクリドン等の公知の低分子正孔注入輸送材料やポリ(パラ−フェニレンビニレン)、ポリアニリン等の高分子正孔輸送材料を(化1)で表す化合物と混合して正孔注入輸送層として用いるか、または、図3で示すように、第2正孔注入輸送層(12)成膜時の溶媒に不溶な正孔輸送性材料を第1正孔注入輸送層(11)とし、第2正孔注入輸送層(12)として本発明による正孔輸送性縮合物を用いて多層の正孔注入輸送層を形成することもできる。さらに3層以上の多層の正孔輸送層とすることも可能である。本発明の正孔輸送性縮合物の層は、耐熱性を上げるため、また、有機溶剤に不溶化するため分子鎖を架橋させることができる。 Further, in the hole transporting condensate layer of the present invention, the step of the work function value between the anode and the light emitting layer is reduced to improve the hole injection efficiency, improve the adhesion between layers, prevent deterioration, adjust the color tone, etc. Other known aromatic tertiary amine materials, metal phthalocyanines such as CuPc, chlorinated copper phthalocyanine, and tetra (t-butyl) copper phthalocyanine, metal phthalocyanines such as quinacridone, and low molecular weight compounds such as quinacridone A hole injection / transport material or a polymer hole transport material such as poly (para-phenylene vinylene) or polyaniline is mixed with a compound represented by (Chemical Formula 1) and used as a hole injection / transport layer, or shown in FIG. As described above, the hole transporting material insoluble in the solvent at the time of film formation is the first hole injection transport layer (11) and the second hole injection transport layer (12). Hole transportability according to the present invention Compound a may be formed positive hole injection transport layer of the multilayer with. Further, it is possible to form a multilayer hole transport layer of three or more layers. The hole transport condensate layer of the present invention can crosslink molecular chains in order to increase heat resistance and insolubilize in an organic solvent.
具体的には第3級アミン化合物中の置換基に、アジド基、スルホニルアジド基、カルボニルアジド基等の感光性基を導入するか、または、カルボニル化合物中にシンナミル基、スチルベン基、ビニル基等の感光性基を導入し光架橋するか、または、第3級アミン化合物中およびカルボニル化合物中の置換基としてエチル基、イソプロピル基等水素ラジカルが引き抜かれやすい基を導入し、ベンゾフェノン等の増感材を添加して光架橋する。 Specifically, a photosensitive group such as an azide group, a sulfonyl azide group, or a carbonyl azide group is introduced into a substituent in the tertiary amine compound, or a cinnamyl group, a stilbene group, a vinyl group, or the like in the carbonyl compound. Sensitization of benzophenone or the like by introducing a photo-crosslinkable group, or introducing a group in the tertiary amine compound or carbonyl compound that can easily extract a hydrogen radical such as an ethyl group or an isopropyl group. Add material and photocrosslink.
光架橋は真空中、またはアルゴン等の不活性ガス中で、Tg以上に加熱しながら紫外線を照射して行われる。 Photocrosslinking is performed by irradiating with ultraviolet rays in a vacuum or in an inert gas such as argon while heating to Tg or higher.
架橋を十分に行うため、成膜、光架橋後、塩酸、ギ酸等の酸のガス雰囲気下ホルムアルデヒドガスで架橋させることも可能である。 In order to perform sufficient crosslinking, it is also possible to perform crosslinking with formaldehyde gas in an acid gas atmosphere such as hydrochloric acid or formic acid after film formation and photocrosslinking.
本発明の正孔輸送性縮合物は、原料として用いる第3級アミンに化学式(5)〜(8)のような可視光領域に蛍光スペクトルのピークを持つ正孔輸送性発光材料を単独または混合して、または化学式(1)〜(4)で示すような正孔輸送材料と混合して用いることにより、有機正孔輸送発光層(6)として機能し、青、緑、赤、白色等任意の発光色を得られる。 The hole transporting condensate of the present invention is a single or mixed hole transporting light emitting material having a fluorescence spectrum peak in the visible light region such as chemical formulas (5) to (8) in the tertiary amine used as a raw material. Or by mixing with a hole transport material as represented by chemical formulas (1) to (4), it functions as an organic hole transport light-emitting layer (6), and can be arbitrarily selected from blue, green, red, white, etc. Can be obtained.
本発明の正孔輸送性縮合物のパターンを形成する場合には、成膜、マスク露光後、トルエン等の有機溶媒で現像することにより所望のネガパターンを形成することができる。 When forming the pattern of the hole-transporting condensate of the present invention, a desired negative pattern can be formed by developing with an organic solvent such as toluene after film formation and mask exposure.
その他、第3級アミン化合物中の置換基にジアゾニウム塩を導入し、成膜、マスク露光後、アルカリ水溶液で現像してネガパターンを得ることができる。青、緑、赤の蛍光を有する本発明の正孔輸送性縮合物のパターンニングを3回繰り返し基板上に2次元に青、緑、赤のパターンを配列することにより、図5に示したようなカラーディスプレイに対応したパターン形成した正孔輸送発光層(13)を得ることができる。 In addition, a negative pattern can be obtained by introducing a diazonium salt into a substituent in the tertiary amine compound, forming a film, exposing to a mask, and developing with an alkaline aqueous solution. As shown in FIG. 5, the patterning of the hole-transporting condensate of the present invention having blue, green and red fluorescence is repeated three times to arrange the blue, green and red patterns in two dimensions on the substrate. Pattern-formed hole transport light emitting layer (13) corresponding to a color display can be obtained.
有機正孔注入輸送層(3)および有機正孔輸送発光層(6)の膜厚は、単層または積層により形成する場合においても100nm以下であり、好ましくは5〜70nmである。 The film thickness of the organic hole injecting and transporting layer (3) and the organic hole transporting and emitting layer (6) is 100 nm or less, preferably 5 to 70 nm, even when formed by a single layer or a laminate.
次に、図1、図3のように有機正孔注入輸送層(3)、または第2正孔注入輸送層(12)上に有機発光層(4)を形成する場合について説明する。 Next, the case where the organic light emitting layer (4) is formed on the organic hole injecting and transporting layer (3) or the second hole injecting and transporting layer (12) as shown in FIGS. 1 and 3 will be described.
有機発光層(4)は、可視領域に強い蛍光を有する任意の蛍光体を1種以上含む層であり、固体状態で強い蛍光があり平滑な膜を形成でき成膜性が良い場合には蛍光体のみで有機発光層(4)を形成可能であるが、固体状態で蛍光が消光したり、平滑な膜を形成できない場合には正孔注入輸送材料中や電子注入輸送材料中または適当な樹脂バインダー中に適当な濃度に分散させて用いることができる。 The organic light emitting layer (4) is a layer containing one or more arbitrary phosphors having strong fluorescence in the visible region. If the organic light emitting layer (4) has a strong fluorescence in the solid state and a smooth film can be formed, the fluorescence is good. The organic light-emitting layer (4) can be formed only by the body, but when the fluorescence is quenched or a smooth film cannot be formed in the solid state, it can be formed in a hole injection transport material, an electron injection transport material, or an appropriate resin. It can be used by being dispersed in an appropriate concentration in a binder.
本発明のEL素子に用いることができる蛍光体の例としては、9,10−ジアリールアントラセン誘導体、サリチル酸塩、ピレン、コロネン、ペリレン、ルブレン、テトラフェニルブタジエン、9,10−ビス(フェニルエチニル)アントラセン、8−キノリノラートリチウム、Alq、トリス(5,7−ジクロロ−8−キノリノラート)アルミニウム錯体、トリス(5−クロロ−8−キノリノラート)アルミニウム錯体、ビス(8−キノリノラート)亜鉛錯体、トリス(5−フルオロ−8−キノリノラート)アルミニウム錯体、トリス(4ーメチルー5−トリフルオロメチル−8−キノリノラート)アルミニウム錯体、トリス(4ーメチルー5−シアノ−8−キノリノラート)アルミニウム錯体、ビス(2ーメチルー5−トリフルオロメチル−8−キノリノラート)[4ー(4ーシアノフェニル)フェノラート]アルミニウム錯体、ビス(2ーメチルー5−シアノ−8−キノリノラート)[4ー(4ーシアノフェニル)フェノラート]アルミニウム錯体、トリス(8−キノリノラート)スカンジウム錯体、ビス〔8−(パラートシル)アミノキノリン〕亜鉛錯体およびカドミウム錯体、1,2,3,4−テトラフェニルシクロペンタジエン、ペンタフェニルシクロペンタジエン、ポリ−2,5−ジヘプチルオキシ−パラ−フェニレンビニレン、あるいは出光興産出願の特開平4−31488号、イーストマン・コダック社の米国特許第5,141,671号明細書、同4,769,292号明細書中で言及されている蛍光物質やN、N’ジアリール置換ピロロピロール化合物等があげられる。 Examples of phosphors that can be used in the EL device of the present invention include 9,10-diarylanthracene derivatives, salicylates, pyrenes, coronene, perylene, rubrene, tetraphenylbutadiene, 9,10-bis (phenylethynyl) anthracene. 8-quinolinolato lithium, Alq, tris (5,7-dichloro-8-quinolinolato) aluminum complex, tris (5-chloro-8-quinolinolato) aluminum complex, bis (8-quinolinolato) zinc complex, tris (5 -Fluoro-8-quinolinolato) aluminum complex, tris (4-methyl-5-trifluoromethyl-8-quinolinolato) aluminum complex, tris (4-methyl-5-cyano-8-quinolinolato) aluminum complex, bis (2-methyl-5-trifluoro) Mechi -8-quinolinolato) [4- (4-cyanophenyl) phenolate] aluminum complex, bis (2-methyl-5-cyano-8-quinolinolato) [4- (4-cyanophenyl) phenolate] aluminum complex, tris (8-quinolinolato) scandium complex, Bis [8- (paratosyl) aminoquinoline] zinc complex and cadmium complex, 1,2,3,4-tetraphenylcyclopentadiene, pentaphenylcyclopentadiene, poly-2,5-diheptyloxy-para-phenylene vinylene, or JP-A-4-31488 of Idemitsu Kosan application, U.S. Pat. Nos. 5,141,671 and 4,769,292 of Eastman Kodak Company, and N, N 'Diaryl substituted pyrrolopyrrole compounds etc. It is below.
これらの有機発光層材料の成膜方法は真空蒸着法、またはスピンコート、ブレードコート等の方法でコーティングすることにより行なうことができる。 These organic light emitting layer materials can be formed by coating by a vacuum deposition method, spin coating, blade coating or the like.
有機発光層(4)の膜厚は、単層または積層により形成する場合においても100nm以下であり、好ましくは5〜70nmである。 The film thickness of the organic light emitting layer (4) is 100 nm or less, preferably 5 to 70 nm, even when formed by a single layer or stacked layers.
また、有機発光層(4)中の蛍光体は、発光波長変換、発光波長拡大、発光効率向上等のために、米国ラムダフィズィック社またはイーストマンコダック社のレーザーダイカタログ等に記載されているクマリン系やキナクリドン系、ペリレン系、ピラン系等の蛍光体を、1種類以上ゲスト発光体としてホスト発光母体中にドーピングするか、多種類の蛍光体の発光層を2層以上積層してもよく、そのうちの一方は赤外域または紫外域に蛍光を示すものであってもよい。更に、発光層の蛍光体が無機物質であっても良い。 Further, the phosphor in the organic light emitting layer (4) is described in a laser die catalog of US Lambda Fizzic or Eastman Kodak for the purpose of light emission wavelength conversion, light emission wavelength expansion, light emission efficiency improvement, and the like. One or more types of phosphors such as coumarin, quinacridone, perylene, and pyran may be doped into the host luminescent matrix as a guest luminescent material, or two or more luminescent layers may be stacked. One of them may exhibit fluorescence in the infrared region or the ultraviolet region. Furthermore, the phosphor of the light emitting layer may be an inorganic substance.
次に、図2、図4、図5のように有機発光層(4)、または有機正孔輸送発光層(6)上に有機電子注入輸送層(7)を積層する場合、有機電子注入輸送材料の好ましい条件は、電子移動度が大きく、LUMOの状態密度が大きく、LUMOのエネルギーレベルが有機発光層材料のLUMOのエネルギーレベルと同程度から陰極材料のフェルミレベル(仕事関数)の間にあり、イオン化エネルギーが有機発光層材料より大きく、成膜性が良いことである。さらに陽極(2)が不透明で、透明もしくは半透明の陰極(5)から光を取り出す構成の素子においては少なくとも有機発光層材料の蛍光波長領域において実質的に透明である必要がある。 Next, when the organic electron injecting and transporting layer (7) is laminated on the organic light emitting layer (4) or the organic hole transporting light emitting layer (6) as shown in FIGS. Preferred conditions for the material are high electron mobility, high LUMO density of states, and the LUMO energy level is between the LUMO energy level of the organic light emitting layer material and the Fermi level (work function) of the cathode material. The ionization energy is larger than that of the organic light emitting layer material, and the film formability is good. Further, in an element in which the anode (2) is opaque and light is extracted from the transparent or translucent cathode (5), it is necessary to be substantially transparent at least in the fluorescence wavelength region of the organic light emitting layer material.
有機電子注入輸送層の例としては、BPBD、2,5−ビス(1−ナフチル)−1,3,4−オキサジアゾール、および浜田らの合成したオキサジアゾール誘導体(日本化学会誌、1540頁、1991年)やビス(10−ヒドロキシベンゾ[h]キノリノラート)ベリリウム錯体、特開平7−90260号で述べられているトリアゾール化合物やサイエンス第267 巻1969頁(1995年)記載の、Marko Strukelj等による、Poly(p−phenylenevinylene)発光層の上に設けられた1,2−Bis(3−hydroxy)phenyl−4−(3−trifluoromethylphenyl)−triazoleとDecafluorobiphenylの脱ふっ化水素縮合ポリマー等の化合物、その他、炭化シリコン、アモルファスシリコン膜等の無機半導体や光導電性膜があげられる。また、ホスト発光母体中にゲスト発光体をドーピングして発光層を形成した場合には、ホスト発光母体を有機電子注入輸送層として用いることも可能である。 Examples of the organic electron injecting and transporting layer include BPBD, 2,5-bis (1-naphthyl) -1,3,4-oxadiazole, and an oxadiazole derivative synthesized by Hamada et al. (The Chemical Society of Japan, page 1540). 1991) and bis (10-hydroxybenzo [h] quinolinolato) beryllium complexes, triazole compounds described in JP-A-7-90260, and Marko Strukelj et al. Described in Science 267, 1969 (1995). , Dehydrofluorination condensation polymer of 1,2-Bis (3-hydroxy) phenyl-4- (3-trifluoromethylphenyl) -triazole and Decafluorophenyl, etc. provided on the light emitting layer of Poly (p-phenylenevinylene) Examples thereof include inorganic semiconductors such as compounds, silicon carbide, and amorphous silicon films, and photoconductive films. In addition, in the case where a light emitting layer is formed by doping a guest light emitting matrix in the host light emitting matrix, the host light emitting matrix can be used as an organic electron injecting and transporting layer.
有機電子注入輸送層(7)の成膜方法は、スピンコート法等の方法で塗布、または真空蒸着法、CVD法、累積膜法等の方法により行なわれ、1nm〜1μmの厚さに単層、または多層で成膜される。 The organic electron injecting and transporting layer (7) is formed by a method such as spin coating or by a method such as a vacuum deposition method, a CVD method or a cumulative film method, and a single layer having a thickness of 1 nm to 1 μm. Alternatively, the film is formed in multiple layers.
次に陰極(5)を有機発光層(4)または有機電子注入輸送層(7)上に形成する。陰極は、電子注入を効果的に行なうために有機発光層(4)または有機電子注入輸送層(7)と接する面に低仕事関数の物質を用いるとより効果的である。陰極を構成する材料はMg,Al,Yb等の金属単体、または低仕事関数と安定性を両立させるため、低仕事関数なLi,Mg,Ca,Sr,La,Ce,Er,Eu,Sc,Y,Yb等の金属1種以上と、安定なAg,Al,In,Sn,Zn,Mn、Ti、Zr等の金属元素との合金系または積層系等が用いられる。 Next, the cathode (5) is formed on the organic light emitting layer (4) or the organic electron injecting and transporting layer (7). The cathode is more effective when a material having a low work function is used on the surface in contact with the organic light emitting layer (4) or the organic electron injecting and transporting layer (7) in order to effectively inject electrons. The material constituting the cathode is a single metal such as Mg, Al, Yb or the like, or a low work function such as Li, Mg, Ca, Sr, La, Ce, Er, Eu, Sc, An alloy system or a laminated system of one or more metals such as Y and Yb and a stable metal element such as Ag, Al, In, Sn, Zn, Mn, Ti, and Zr is used.
陰極の形成方法は、材料に応じて、抵抗加熱蒸着法、電子ビーム蒸着法、反応性蒸着法、イオンプレーティング法を用いたり、合金ターゲットを用いてスパッタリング法により陰極を成膜するこができる。陰極の厚さは、10nm〜1μm程度の膜厚で形成される。 Depending on the material, the cathode can be formed by resistance heating vapor deposition, electron beam vapor deposition, reactive vapor deposition, ion plating, or by sputtering using an alloy target. . The cathode is formed with a thickness of about 10 nm to 1 μm.
次に素子の有機物からなる層や電極の酸化を防ぐために素子上に封止層(8)を形成する。封止層(8)は、陰極(5)の形成後直ちに形成する。封止層材料の例としては、SiO2,SiO,GeO、MgO、CaO、Al2O3、B2O3、TiO2、ZnO、SnO等の酸化物(1酸化物は多少化学量論比からずれていることもある)、MgF2,LiF,BaF2,AlF3等の沸化物、ZnS等の硫化物等の酸素ガスおよび水蒸気バリアー性の高い無機化合物があげられるが、上記例に限定されるものではない。これらを単体または複合化、または多層化して蒸着法、反応性蒸着法、CVD法、スパッタリング法、イオンプレーティング法等により成膜する。 Next, a sealing layer (8) is formed on the element in order to prevent oxidation of the layer made of organic matter and the electrode of the element. The sealing layer (8) is formed immediately after the formation of the cathode (5). Examples of the sealing layer material include oxides such as SiO 2 , SiO, GeO, MgO, CaO, Al 2 O 3 , B 2 O 3 , TiO 2 , ZnO, and SnO (one oxide has a slightly stoichiometric ratio). Oxygen gas such as MgF 2 , LiF, BaF 2 , AlF 3 , sulfides such as ZnS, and inorganic compounds having a high water vapor barrier property, but are limited to the above examples. Is not to be done. These are formed into a single layer, a composite layer, or a multilayered layer by vapor deposition, reactive vapor deposition, CVD, sputtering, ion plating, or the like.
さらに、湿気の浸入を防ぐために、ハーメチックシールによりEL素子の基板を真空中で密封するか、市販の低吸湿性の光硬化性接着剤、エポキシ系接着剤、シリコーン系接着剤、架橋エチレンー酢酸ビニル共重合体接着剤シート等の接着性樹脂や低融点ガラス等の接着材料(9)を用いて、ガラス板等の封止板(10)の周囲または全面を接着し密封する。ガラス板以外にも、金属板、プラスチック板等を用いることもできる。接着材料(9)中にシリカゲルやゼオライト等の乾燥剤を混合しておいても良いし、封止層(8)上や封止板(10)の内面にシリカゲルやゼオライト、カルシア等の乾燥剤やアルカリ金属やアルカリ土類金属、希土類などからなるゲッター材の層を形成しておいても良い。 Furthermore, in order to prevent moisture from entering, the EL element substrate is hermetically sealed in a vacuum, or a commercially available low-humidity photocurable adhesive, epoxy adhesive, silicone adhesive, cross-linked ethylene-vinyl acetate. The periphery or the entire surface of the sealing plate (10) such as a glass plate is adhered and sealed using an adhesive resin such as a copolymer adhesive sheet or an adhesive material (9) such as low-melting glass. Besides a glass plate, a metal plate, a plastic plate, etc. can also be used. A desiccant such as silica gel or zeolite may be mixed in the adhesive material (9), or a desiccant such as silica gel, zeolite or calcia on the sealing layer (8) or on the inner surface of the sealing plate (10). Alternatively, a getter layer made of alkali metal, alkaline earth metal, rare earth, or the like may be formed.
以上のように構成した有機薄膜EL素子は、有機正孔注入輸送層(3)側を正として電源(14)にリード線(15)で接続し直流電圧を印加することにより発光するが、交流電圧を印加した場合にも陽極(2)が正に電圧印加されている間は発光する。 The organic thin-film EL device configured as described above emits light when the organic hole injecting and transporting layer (3) side is positive and connected to a power source (14) with a lead wire (15) and a DC voltage is applied. Even when a voltage is applied, the anode (2) emits light while a positive voltage is applied.
窒素雰囲気中で、トリフェニルアミン10.0gとシンナモイルアルデヒド5.42gに、1,4−ジオキサン10mlを加え、これにパラトルエンスルホン酸0.75gを加えてオイルバスの温度120℃で15時間攪拌反応させた。これをメタノールに投入し沈殿させた。このポリマーをクロロホルム/メタノール=2/1、クロロホルム/アセトン=3/1で再沈殿精製し低分子量体を取り除いたき、化学式(18)、R1=Hで示す薄黄緑色粉末状の正孔輸送性縮合物13.4gを得た。 In a nitrogen atmosphere, 10 ml of 1,4-dioxane was added to 10.0 g of triphenylamine and 5.42 g of cinnamoyl aldehyde, 0.75 g of paratoluenesulfonic acid was added thereto, and the temperature of the oil bath was 120 ° C. for 15 hours. The reaction was stirred. This was put into methanol and precipitated. When this polymer is purified by reprecipitation with chloroform / methanol = 2/1 and chloroform / acetone = 3/1 to remove low molecular weight substances, hole transport in the form of light yellowish green powder represented by chemical formula (18), R 1 = H 13.4 g of a functional condensate was obtained.
この正孔輸送性縮合物について、ポンプとして日本分光工業社製の880−PUを用い、検出器として日本分光工業社製の示差屈折計830−RIを用い、スチレンゲルを固定相、クロロホルムを移動相としてGPC測定を行なったところ、数平均分子量が1,1万、重量平均分子量51万(昭和電工社製 標準ポリスチレン換算)であった。 About this hole transportable condensate, using 880-PU manufactured by JASCO Corporation as a pump, using a differential refractometer 830-RI manufactured by JASCO Corporation as a detector, moving styrene gel as a stationary phase and moving chloroform. When the GPC measurement was performed as a phase, the number average molecular weight was 10,000 and the weight average molecular weight was 510,000 (standard polystyrene conversion by Showa Denko KK).
次に、この正孔輸送性縮合物について、セイコー電子工業社製のDSC220を用い、窒素雰囲気下、昇温速度10℃/minでガラス転移点(Tg)を定したところ、185℃〜187℃であった。また、理研計器(株)製表面分析装置AC−1で測定したイオン化エネルギーは5.8eVであった。 Next, about this hole transportable condensate, when a glass transition point (Tg) was determined at a heating rate of 10 ° C./min in a nitrogen atmosphere using DSC220 manufactured by Seiko Electronics Industry Co., Ltd., 185 ° C. to 187 ° C. Met. The ionization energy measured with a surface analyzer AC-1 manufactured by Riken Keiki Co., Ltd. was 5.8 eV.
透明絶縁性の基板(1)として、厚さ1.1mmの青板ガラス板を用い、この上に120nmのITOをスパッタリング法で被覆して陽極(2)とした。この透明導電性基板を使用前に水洗、プラズマ洗浄により十分に洗浄した。 A blue glass plate having a thickness of 1.1 mm was used as the transparent insulating substrate (1), and 120 nm of ITO was coated thereon by a sputtering method to form an anode (2). This transparent conductive substrate was sufficiently washed by water and plasma before use.
正孔注入輸送層は、まず、第1正孔注入輸送層(11)としてアルドリッチ製の銅フタロシアニンを10nm真空蒸着し、第2正孔注入輸送層(12)として本発明の正孔輸送性縮合物[化学式(18)、R1=H]のトルエン溶液をスピンコートし40nmの厚さで形成した。 The hole injecting and transporting layer is prepared by first vacuum depositing Aldrich copper phthalocyanine as a first hole injecting and transporting layer (11) to a thickness of 10 nm and using the second hole injecting and transporting layer (12) as a hole transporting condensation of the present invention. A toluene solution of the product [Chemical Formula (18), R 1 = H] was spin-coated to form a thickness of 40 nm.
次に、有機発光層(4)としてAlqを50nm蒸着し、その上面に陰極(5)としてMgとAgを蒸着速度比10:1で220nm蒸着した。最後に、封止層(8)としてGeOを1μmイオンプレーティング後、ガラス板(10)を光硬化性樹脂(9)で接着し密封した。 Next, 50 nm of Alq was vapor-deposited as an organic light emitting layer (4), and Mg and Ag were vapor-deposited as a cathode (5) on the upper surface thereof at a vapor deposition rate ratio of 10: 1. Finally, GeO was plated by 1 μm as a sealing layer (8), and then the glass plate (10) was adhered and sealed with a photocurable resin (9).
この素子は4V以上の直流電圧により緑色に安定発光し、15Vにおける輝度は7766cd/m2、電流密度は471mA/cm2であった。100℃に加熱後も同様に発光した。 This device stably emitted green light by a DC voltage of 4 V or higher, the luminance at 15 V was 7766 cd / m 2 , and the current density was 471 mA / cm 2 . Light was emitted in the same manner after heating to 100 ° C.
実施例2の正孔輸送性縮合物をスピンコート後、基板を真空中250℃に加熱したホットプレート上で約30cmの距離から150W重水素ランプ[浜松ホトニクス(株)製L1835]で紫外線を1時間20分照射し架橋した。膜はトルエン不溶になっていた。その後、実施例2と同様にEL素子を作製した。 After spin-coating the hole transporting condensate of Example 2, the substrate was heated at 250 ° C. in a vacuum at a distance of about 30 cm from a distance of about 30 cm using a 150 W deuterium lamp [L1835 manufactured by Hamamatsu Photonics Co., Ltd.]. It was irradiated for 20 minutes for crosslinking. The membrane was insoluble in toluene. Thereafter, an EL element was produced in the same manner as in Example 2.
この素子は4V以上の直流電圧により緑色に安定発光し、14Vにおける輝度は8543cd/m2、電流密度は678mA/cm2であった。 This device stably emitted green light by a DC voltage of 4 V or higher, the luminance at 14 V was 8543 cd / m 2 , and the current density was 678 mA / cm 2 .
実施例2と同様に銅フタロシアニンを蒸着後、実施例1の正孔輸送性縮合物を90nmスピンコート後、250℃加熱下紫外線のマスク露光、トルエン現像によりライン/スペース(1mm/1mm)のストライプ状にパターンを形成した。さらに緑色蛍光体[化学式(6)R1=メトキシ]を30%含むトリフェニルアミンを原料とし実施例1と同様に反応させて得られる正孔輸送性縮合物を90nmの厚さにスピンコートし、250℃加熱下紫外線のマスク露光、トルエン現像により実施例1の正孔輸送性縮合物から成るパターンのスペース部にストライプ状にパターンを形成した。 After vapor deposition of copper phthalocyanine in the same manner as in Example 2, the hole transporting condensate of Example 1 was spin-coated at 90 nm, then exposed to UV mask under heating at 250 ° C., and line / space (1 mm / 1 mm) stripes by toluene development. A pattern was formed. Further, a hole transporting condensate obtained by reacting in the same manner as in Example 1 using a triphenylamine containing 30% of a green phosphor [chemical formula (6) R 1 = methoxy] as a raw material was spin-coated to a thickness of 90 nm. A pattern was formed in a stripe pattern in the space portion of the pattern comprising the hole transporting condensate of Example 1 by UV mask exposure under heating at 250 ° C. and toluene development.
その上面に陰極(5)としてMgとAgを蒸着速度比10:1で220nm蒸着した。最後に、封止層(8)としてGeOを1μmイオンプレーティング後、ガラス板(10)を光硬化性樹脂(9)で接着し密封した。 On the upper surface, Mg and Ag were deposited as a cathode (5) at a deposition rate ratio of 10: 1 to 220 nm. Finally, GeO was plated by 1 μm as a sealing layer (8), and then the glass plate (10) was adhered and sealed with a photocurable resin (9).
この素子は、150℃に加熱しても安定にストライプ状の緑色発光をした。 This device stably emitted green light in a stripe shape even when heated to 150 ° C.
(1)…基板
(2)…陽極
(3)…有機正孔注入輸送層
(4)…有機発光層
(5)…陰極
(6)…有機正孔輸送発光層
(7)…有機電子注入輸送層
(8)…封止層
(9)…接着性材料層
(10)…ガラス板
(11)…第1正孔注入輸送層
(12)…第2正孔注入輸送層
(13)…パターン形成した正孔輸送発光層
(14)…電源
(15)…リード線
(16)…陰極取り出し口
(1) ... Substrate (2) ... Anode (3) ... Organic hole injection / transport layer (4) ... Organic light emitting layer (5) ... Cathode (6) ... Organic hole transport light emitting layer (7) ... Organic electron injection / transport Layer (8) ... Sealing layer (9) ... Adhesive material layer (10) ... Glass plate (11) ... First hole injection / transport layer (12) ... Second hole injection / transport layer (13) ... Pattern formation Hole transporting light emitting layer (14) ... power source (15) ... lead wire (16) ... cathode outlet
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