[go: up one dir, main page]

JP3741184B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP3741184B2
JP3741184B2 JP21105698A JP21105698A JP3741184B2 JP 3741184 B2 JP3741184 B2 JP 3741184B2 JP 21105698 A JP21105698 A JP 21105698A JP 21105698 A JP21105698 A JP 21105698A JP 3741184 B2 JP3741184 B2 JP 3741184B2
Authority
JP
Japan
Prior art keywords
conductor
conductor wire
semiconductor device
wires
semiconductor chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP21105698A
Other languages
English (en)
Other versions
JP2000049185A (ja
Inventor
則人 梅原
Original Assignee
日本テキサス・インスツルメンツ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本テキサス・インスツルメンツ株式会社 filed Critical 日本テキサス・インスツルメンツ株式会社
Priority to JP21105698A priority Critical patent/JP3741184B2/ja
Priority to US09/361,502 priority patent/US6380634B1/en
Publication of JP2000049185A publication Critical patent/JP2000049185A/ja
Application granted granted Critical
Publication of JP3741184B2 publication Critical patent/JP3741184B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
    • H01L21/4825—Connection or disconnection of other leads to or from flat leads, e.g. wires, bumps, other flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05556—Shape in side view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061—Disposition
    • H01L2224/0612—Layout
    • H01L2224/0615—Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry
    • H01L2224/06153—Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry with a staggered arrangement, e.g. depopulated array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4801—Structure
    • H01L2224/48011—Length
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48095—Kinked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/494—Connecting portions
    • H01L2224/4943—Connecting portions the connecting portions being staggered
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85203—Thermocompression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Description

【０００１】
【発明の属する技術分野】
本発明は、半導体チップを外部導体へ電気的に接続するための導体ワイヤに関し、特にパッケージの薄型化及びワイヤ間のショートを回避するに優れた導体ワイヤを提供する。
【０００２】
【従来の技術】
半導体チップを外部導体、例えば絶縁基板上のパターンやリードフレームへ接続する方法として、ワイヤボンディングは最も一般的な方法である。ワイヤボンディングでは、キャピラリと呼ばれる工具から供給される金(Au)やアルミニウム(Al)の極細ワイヤによって、半導体チップと外部導体とが接続される。製造工程においてワイヤは、キャピラリによりその一端を半導体チップの電極パッドにボンディングされ、ルーピング、すなわちループを描くように引き伸ばされ、他端を外部導体にボンディングされる。
【０００３】
上記ワイヤのルーピングは、モールド注入時における圧力耐性や熱によるワイヤの収縮の影響を吸収する上で重要な役割を果たす。しかしながらその一方で、ルーピングによる、ワイヤの半導体チップ表面からの立ち上がり量が、半導体装置の厚さに直接影響を与える。半導体チップ表面には、上記ワイヤを完全に覆い隠すに十分なパッケージ材による厚みが必要となる。電子・通信機器の小型化の要求によって、それに搭載される半導体装置の更なる小型化、薄型化が必要とされており、従って半導体チップ上のパッケージ材の厚みをより薄くすることは極めて重要である。
【０００４】
一方、半導体装置の高速化及び多機能化に伴い、半導体装置の接続端子数は増加の一途を辿っている。接続端子数の増加は、装置内部のワイヤの本数の増加を意味する。この結果、上記装置の小型化の要求と相俟って、隣り合うワイヤ同士のショートの危険性が増大する。すなわち、隣り合うワイヤ間の距離が狭くなると、製造時におけるワイヤの配置のばらつきや、モールド注入時におけるワイヤの変形により、ワイヤのショートが起こる。図６に示すように半導体チップ１上に千鳥状に電極パッド２を配列した場合、単位面積当たりの接続端子数を多くすることができるが、ワイヤＷ間の距離は更に狭くなり、上記問題はより深刻化する。
【０００５】
【発明が解決しようとする課題】
この問題を解決する一つの方法として、図７に示すようにワイヤＷの途中に一般に”曲”と呼ばれる屈曲点(図中、Ｐ点)を形成して、変形に対する耐性を高める方法がある。しかしながら、該屈曲点によってもワイヤの変形が無くなることはなく、ワイヤの配置のばらつきによって、依然ショートの危険性がある。
【０００６】
ワイヤショートの危険性を小さくする他の方法として、図８に示すように隣り合うワイヤのルーピングの高さ位置を交互に変えてボンディングする方法がある。製造時のワイヤのばらつきにより隣り合うワイヤ同士が平面的に見て近接しても、高さ方向でワイヤ間には十分な間隙が確保され、ショートの危険性は極めて小さくなる。しかしながら、高さ方向に十分な間隙を確保するためには、半導体チップ上のパッケージ材の厚さを厚くしなければならないという問題が生じる。
【０００７】
本発明の目的は、半導体装置の薄型化を実現するに適した導体ワイヤを提供することである。
【０００８】
本発明の別の目的は、上記半導体装置の薄型化を達成しつつ、ワイヤ間のショートの問題を最小限に抑えることができる導体ワイヤを提供することである。
【０００９】
【課題を解決するための手段】
本発明は、半導体チップを外部導体へ電気的に接続するための導体ワイヤに関する。本発明に係わる半導体装置は、半導体チップと、外部導体と、上記半導体チップを上記外部導体へ電気的に接続するための第１の導体ワイヤとを有する半導体装置において、上記第１の導体ワイヤは、上記半導体チップの上面の電極パッドにボンディングされる第１の端部と、上記外部導体にボンディングされる第２の端部と、上記第１の端部と上記第２の端部との間に位置する屈曲点とを有し、上記屈曲点が上記半導体チップの上面と底面との間の高さに位置すると共に上記第２の端部よりも上記第１の端部に近い位置する。
【００１０】
ここで上記屈曲点とは、一般に”曲”といわれる、製造時に意図的に曲げられたワイヤ上の箇所である。屈曲点を導体ワイヤの立ち上がり方向と略逆方向に屈曲することにより、導体ワイヤの半導体チップ主面からの立ち上がり量を抑え、半導体装置を更に薄くできるようにする。
【００１１】
本発明において、導体ワイヤの立ち上がり量をできるだけ抑えるために、上記屈曲点を、上記第一の端部と上記第二の端部とを結ぶ直線位置を基準として導体ワイヤの立ち上がり側と反対側に位置させること、また上記第一の端部寄りに位置させることが好ましい。
【００１２】
また、導体ワイヤの変形に対する耐性を更に高めるために、一つの導体ワイヤ上に、上記屈曲点を複数備えても良い。
【００１３】
本発明は、更に上記導体ワイヤを備えた半導体装置を提供する。本発明に係る半導体装置は、複数の第一の導体ワイヤと、該各第一の導体ワイヤ間に配置される複数の第二の導体ワイヤとを備える。ここで、上記第一の導体ワイヤは、上記第一の端部からの導体ワイヤの立ち上がり方向に屈曲された屈曲点を備え、上記第二の導体ワイヤは、それとは略逆方向に屈曲された屈曲点を備える。異なる方向の屈曲点を有する導体ワイヤ間には、十分な間隙が形成されショートの可能性が減少する。
【００１４】
【発明の実施の形態】
以下、本発明の実施形態を図面に沿って説明する。図１に本発明の導体ワイヤを適用した半導体装置の要部を拡大して示す。図１に示す半導体装置は、ＴＱＦＰ(Thin Quad Flat Package)である。ＴＱＦＰでは、半導体チップ１はダイパッド３上に固定され、それとは離れた位置にリードフレームのインナーリード４が、半導体チップ１を囲むように配置される。そして、半導体チップ１の主面の周囲に配置された電極パッド２と、リードフレームのインナーリード４とが、導体ワイヤ５によって電気的に接続される。ＴＱＦＰの一般的な構造についてはここではこれ以上言及しないが、当業者においてそれがどのようなものであるかは周知のものとして理解されるであろう。
【００１５】
図において、導体ワイヤ５は下向きの屈曲点Ａ1を有する。屈曲点A1は、導体ワイヤ５の全長の中間点よりも電極パッド２側の端部５ａ寄りに位置している。導体ワイヤ５は、また端部５ｂ寄りに僅かに上向きに屈曲された屈曲点A2を有する。導体ワイヤ５は、端部５ａからいくらか上方に立ち上げられた後、やや急峻に斜め下方に延び屈曲点A1に至る。屈曲点A1で導体ワイヤ５は急激に曲げられ、屈曲点A2によりそこからなだらかに下方に湾曲して、インナーリード４側の端部５ｂに至る。
【００１６】
図１には、導体ワイヤ５の両端部５ａ及び５ｂを結ぶ直線Ｌが示されている。屈曲点A1は、この直線Ｌよりも下側に位置している。屈曲点A1の直線Ｌに対する高さ位置が低くなれば、半導体チップの面からの導体ワイヤの最大立ち上がり高さ(図ではワイヤ上のＰ点の位置)は低くなる。しかし、屈曲点A1の位置を下げ過ぎると、ワイヤ端部５ａに掛かる応力が大きくなり電極パッド２への接合不良を引き起こす可能性があるので、これを考慮して屈曲点A1の位置を調整する必要がある。屈曲点A1の高さ位置は、その開き角度θによってある程度コントロールできるので、導体ワイヤ５の敷設時に該開き角度θを調整すれば良い。
【００１７】
上記半導体装置において、電極パッド２から引き出される全ての導体ワイヤ５が、図１に示す形状を有している。図では示していないが、半導体チップ１及び導体ワイヤ５は、パッケージ外形を形成するモールド樹脂により封止される。
【００１８】
図２は、本発明の他の実施形態を示している。図において半導体チップ１は、図６に示すと同様の千鳥状配列の電極パッド２ａ及び２ｂを有している。図には２種類の形状の導体ワイヤ５、６が示されている。一方の導体ワイヤ５は、図１に示した導体ワイヤと同じ形状であり、その端部５ａは外側の電極パッド２ａの列にボンディングされている。他方の導体ワイヤ６は、従来から用いられている一般的な引き出しによるワイヤであり、その端部６ａは内側の電極パッド２ｂにボンディングされている。すなわち導体ワイヤ６は、電極パッド２ｂから垂直に引き出された後、略直角に屈曲されて水平に延び、インナーリード４寄りの中間位置、すなわち屈曲点Ｂで下方に僅かに屈曲されてインナーリード４に至る。
【００１９】
導体ワイヤ５及び６は、千鳥状配列の電極パッド２ａ及び２ｂから交互に引き出されており、従って同じ形状の導体ワイヤが隣り合うことがないように配列されている。ここで導体ワイヤ５の屈曲点A1は下向きであり、導体ワイヤ６の屈曲点Ｂは上向きである。このため両導体ワイヤにおける中間領域Ｍにおいて、ワイヤ同士はその高さ方向において十分に引き離されている。導体ワイヤの中間領域Ｍは、モールド樹脂注入時における変形量が大きく、またワイヤボンディング時の位置誤差が最も大きく現れる領域である。上記両導体ワイヤの相対的な位置関係によって、該中間領域Ｍにおけるワイヤの接触の可能性が最小限に抑えられる。両導体ワイヤは、その両端部近傍の領域においては、その高さ方向に関し比較的接近して配置されている。しかしながら、ワイヤの端部付近ではモールド樹脂注入時の変形及びワイヤボンディング時の位置誤差も小さいため、この領域で両導体ワイヤが接触する可能性は極めて少ない。なお、上記導体ワイヤ６は上向きの屈曲点Ｂを備えているが、このような屈曲点がないワイヤと上記下向きの屈曲点を有する上記導体ワイヤ５との組み合わせによっても、両ワイヤ間には十分なクリアランスが確保される。
【００２０】
図３は上記図１及び図２における導体ワイヤ５のボンディング工程を示すものである。本工程において基本的なボンディング手順は従来の方法と変わらないが、上記導体ワイヤ５の特殊な形状を実現するため、キャピラリの移動軌跡は特徴的である。
【００２１】
最初に、ワイヤの先端にボールを形成し、キャピラリ１０からの超音波及び熱圧着により、半導体チップの電極パッド２にボンディングする。導体ワイヤのチップからの立ち上がり量を考慮して、斜め上方にワイヤを引き出した後、更に上方にキャピラリ１０を引き上げる(工程(Ａ))。屈曲点を形成する位置(図中、A1点)でキャピラリ１０の引き上げを停止し、キャピラリを側方に移動させた後(工程(Ｂ))、更に引き上げる(工程(Ｃ))。
【００２２】
次に、上記屈曲点A1とは逆向きの屈曲点A2を形成する位置で、キャピラリ１０を左側へ移動し(工程(Ｄ))、屈曲点A1に十分な曲を付ける。キャピラリを上方へ引き上げ(工程(Ｅ))、最後に、ワイヤを引き出しながらキャピラリを移動し、インナーリード４へボンディングを行う(工程(Ｆ))。
【００２３】
図４は、本発明の導体ワイヤの他の実施形態を示したものである。本実施形態において導体ワイヤ７は、複数の下向きの屈曲点Ｃを有する。図では導体ワイヤ７を４分割するように３箇所に下向きの屈曲点Ｃ1〜Ｃ3が形成されている。このように複数の下向きの屈曲点を一つの導体ワイヤ上に形成する利点は、導体ワイヤの変形に対する耐性を高められる点及び導体ワイヤの全域を平均して低い位置に配置できる点にある。本実施形態を図２に示す２種類のワイヤを交互に配置したものの一方として採用すれば、隣り合うワイヤ間のショートの問題はより回避される。
【００２４】
【実施例】
図５に示すように、従来構造及び本発明の一実施例による導体ワイヤのサンプルを作成し、半導体チップ面に対するその高さ位置の比較を行った。サンプルの作成に際し、両ワイヤの高さを出来るだけ低く張るように努めた。使用したワイヤは、何れも、長さ4mm、径25μmのAlワイヤである。測定は全てのサンプルについて、半導体チップの主面の高さを基準にし、該基準に対する屈曲点Ａでのワイヤの高さＤを求めた。その結果を以下の表に纏めた。
【００２５】
【表１】
Figure 0003741184
【００２６】
結果より、本実施例の場合、屈曲点Ａにおいてワイヤの高さを平均値で186.4μm低くできることが確認された。
【００２７】
以上、本発明の実施形態及び実施例を図面に沿って説明した。本発明の適用範囲が、上記実施形態及び実施例において示した事項に限定されないことは明らかである。本発明は、導体ワイヤを用いて半導体チップを外部導体へ電気的に接続するあらゆる半導体装置に適用可能である。導体ワイヤがボンディングされる外部導体は、リードフレームのインナーリード、絶縁基板上の導体パターンその他の導体部分であって良い。またベアチップを直接プリント基板上に実装する際に、プリント基板上のパターンへボンディングされる導体ワイヤにおいても本発明が適用可能である。本発明に係る導体ワイヤは、それが導体ワイヤを必要とする限り、ＴＱＦＰ、ＢＧＡ(Ball Grid Array)、ＣＳＰ(Chip Size Package)その他の半導体装置において実現可能である。
【００２８】
【発明の効果】
本発明により、半導体チップの主面からの導体ワイヤの立ち上がり量を抑えることができ、その結果、半導体装置の薄型化を実現可能となる。
【００２９】
また、本発明により隣り合う導体ワイヤ間の相互距離を比較的大きくとることができるようになり、ワイヤ間のショートの問題を最小限に抑えることができる。
【図面の簡単な説明】
【図１】本発明の導体ワイヤを適用した半導体装置の要部を拡大して示す図である。
【図２】千鳥状ボンディングを用いた半導体装置において本発明を適用した例を示す図である。
【図３】本発明に係る導体ワイヤのボンディング工程を示す図である。
【図４】複数の屈曲点を有する本発明の他の実施形態を示す図である。
【図５】従来構造及び本発明の一実施例による導体ワイヤを比較して示す図である。
【図６】千鳥状ボンディングの様子を示す平面図である。
【図７】従来の導体ワイヤの形状を示す図である。
【図８】千鳥状ボンディングにおける従来の導体ワイヤの形状を示す図である。
【符号の説明】
１ 半導体チップ
２ 電極パッド
３ ダイパッド
４ インナーリード
５ 導体ワイヤ
５ａ 端部
５ｂ 端部
Ａ 屈曲点

Claims (14)

  1. 半導体チップと、外部導体と、上記半導体チップを上記外部導体へ電気的に接続するための第１の導体ワイヤとを有する半導体装置において、
    上記第１の導体ワイヤは、上記半導体チップの上面の電極パッドにボンディングされる第１の端部と、上記外部導体にボンディングされる第２の端部と、上記第１の端部と上記第２の端部との間に位置する屈曲点とを有し、
    上記屈曲点が上記半導体チップの上面と底面との間の高さに位置すると共に上記第２の端部よりも上記第1の端部に近い位置にある半導体装置。
  2. 上記屈曲点が上記半導体チップの底面の向きに曲げられている請求項１に記載の半導体装置。
  3. 上記第１の導体ワイヤが複数の屈曲点を有する請求項１又は２に記載の半導体装置。
  4. 上記半導体チップの上面の電極パッドにボンディングされる第１の端部と外部導体にボンディングされる第２の端部とを有する複数の第２の導体ワイヤを更に有し、
    上記第２の導体ワイヤが上記半導体チップの上面と底面との間の高さの位置に形成される屈曲点を有しない請求項１、２又は３に記載の半導体装置。
  5. 上記第1の導体ワイヤが２つの上記第２の導体ワイヤの間に配置されている請求項４に記載の半導体装置。
  6. 上記第２の導体ワイヤが上記半導体チップの上面の高さの上方に位置する屈曲点を有する請求項４又は５に記載の半導体装置。
  7. 上記第１の導体ワイヤに接続される上記半導体チップの第１の電極パッドと上記第２の導体ワイヤに接続される上記半導体チップの第２の電極パッドとが千鳥状に配置されている請求項５に記載の半導体装置。
  8. 半導体チップを外部導体へ電気的に接続するための複数の導体ワイヤを備えた半導体装置において、
    複数の第１の導体ワイヤと、該各第１の導体ワイヤ間に配置される複数の第２の導体ワイヤとを備え、
    上記第１の導体ワイヤは、上記半導体チップの電極パッドにボンディングされる第１の端部と、上記外部導体にボンディングされる第２の端部と、上記第１及び第２の端部の間に位置し、上記第１の端部からの導体ワイヤの立ち上がり方向に屈曲された屈曲点とを備え、
    上記第２の導体ワイヤは、上記半導体チップの電極パッドにボンディングされる第１の端部と、上記外部導体にボンディングされる第2の端部と、上記第１及び第２の端部の間に位置し、上記第１の端部からの導体ワイヤの立ち上がり方向と略逆方向に屈曲された屈曲点とを備え、
    隣り合う上記第１及び第２の導体ワイヤが空間的に離れて配置された半導体装置。
  9. 上記第1の導体ワイヤの上記屈曲点を、該導体ワイヤの第１の端部と第２の端部とを結ぶ直線位置を基準として導体ワイヤの立ち上がり側に位置させ、
    上記第２の導体ワイヤの上記屈曲点を、該導体ワイヤの第１の端部と第２の端部とを結ぶ直線位置を基準として導体ワイヤの立ち上がり側と反対側に位置させた請求項８に記載の半導体装置。
  10. 上記第２の導体ワイヤの上記屈曲点が、該導体ワイヤ上の第１の端部寄りに位置している請求項８又は９に記載の半導体装置。
  11. 上記第２の導体ワイヤ上に、上記屈曲点を複数備えた請求項８又は９に記載の半導体装置。
  12. 上記半導体チップは、
    上記第１の導体ワイヤの上記第１の端部をボンディングする第１の電極パッドの列と、
    上記第１の電極パッドの列に隣接され、上記第２の導体ワイヤの上記第１の端部をボンディングする第２の電極パッドの列と、
    を備えた請求項８、９、１０又は１１に記載の半導体装置。
  13. 上記第１及び第２の導体ワイヤにおける上記第２の端部がボンディングされる外部導体が、絶縁基板上の導体パターンである請求項８、９、１０、１１又は１２に記載の半導体装置。
  14. 上記第１及び第２の導体ワイヤにおける上記第２の端部がボンディングされる外部導体が、リードフレームである請求項８、９、１０、１１又は１２に記載の半導体装置。
JP21105698A 1998-07-27 1998-07-27 半導体装置 Expired - Lifetime JP3741184B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP21105698A JP3741184B2 (ja) 1998-07-27 1998-07-27 半導体装置
US09/361,502 US6380634B1 (en) 1998-07-27 1999-07-23 Conductor wires and semiconductor device using them

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21105698A JP3741184B2 (ja) 1998-07-27 1998-07-27 半導体装置

Publications (2)

Publication Number Publication Date
JP2000049185A JP2000049185A (ja) 2000-02-18
JP3741184B2 true JP3741184B2 (ja) 2006-02-01

Family

ID=16599672

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21105698A Expired - Lifetime JP3741184B2 (ja) 1998-07-27 1998-07-27 半導体装置

Country Status (2)

Country Link
US (1) US6380634B1 (ja)
JP (1) JP3741184B2 (ja)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4663179B2 (ja) * 2001-08-27 2011-03-30 ルネサスエレクトロニクス株式会社 半導体装置及びワイヤボンディング装置
TW200642012A (en) * 2005-05-17 2006-12-01 Advanced Semiconductor Eng Chip package and wire bonding process thereof
JP5332211B2 (ja) * 2007-03-07 2013-11-06 株式会社デンソー 半導体装置およびその製造方法
JP2009021499A (ja) * 2007-07-13 2009-01-29 Toshiba Corp 積層型半導体装置
JP4361593B1 (ja) 2008-10-21 2009-11-11 株式会社新川 ワイヤボンディング方法
JP5595694B2 (ja) * 2009-01-15 2014-09-24 パナソニック株式会社 半導体装置
CN102244058A (zh) * 2010-05-13 2011-11-16 群丰科技股份有限公司 四方扁平无导脚的半导体封装件及制法及该制造用金属板
KR101746614B1 (ko) * 2011-01-07 2017-06-27 삼성전자 주식회사 발광소자 패키지 및 그 제조방법
JP5917817B2 (ja) * 2011-03-25 2016-05-18 シチズン電子株式会社 ワイヤーボンディング構造
MY152355A (en) 2011-04-11 2014-09-15 Carsem M Sdn Bhd Short and low loop wire bonding
MY181180A (en) 2011-09-09 2020-12-21 Carsem M Sdn Bhd Low loop wire bonding
KR101815754B1 (ko) * 2016-03-10 2018-01-08 앰코 테크놀로지 코리아 주식회사 반도체 디바이스
JP6447580B2 (ja) * 2016-06-15 2019-01-09 日亜化学工業株式会社 発光装置
JP2018137342A (ja) * 2017-02-22 2018-08-30 株式会社村田製作所 半導体装置及びその製造方法
JP6809522B2 (ja) * 2018-11-29 2021-01-06 日亜化学工業株式会社 発光装置
US11342276B2 (en) 2019-05-24 2022-05-24 Amkor Technology Singapore Holding Pte. Ltd. Semiconductor device and method of manufacturing semiconductor device

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5455167A (en) * 1977-10-12 1979-05-02 Toshiba Corp Semiconductor device
JPS56153754A (en) * 1980-04-30 1981-11-27 Toshiba Corp Power transistor
JPS58192688A (ja) * 1982-04-30 1983-11-10 Chiyouonpa Kogyo Kk ワイヤボンデイング装置におけるワイヤル−プ整形方法
ATE109387T1 (de) * 1988-02-23 1994-08-15 F&K Delvotec Bondtechnik Gmbh Vorrichtung und verfahren zur gesteuerten zuführung eines bonddrahtes zum wedge oder zur kapillare eines bondkopfes.
JPH04273135A (ja) * 1991-02-27 1992-09-29 Shinkawa Ltd ワイヤボンデイング方法
US5205463A (en) * 1992-06-05 1993-04-27 Kulicke And Soffa Investments, Inc. Method of making constant clearance flat link fine wire interconnections
US5328079A (en) * 1993-03-19 1994-07-12 National Semiconductor Corporation Method of and arrangement for bond wire connecting together certain integrated circuit components
JP2912134B2 (ja) * 1993-09-20 1999-06-28 日本電気株式会社 半導体装置
US5884398A (en) * 1993-11-16 1999-03-23 Form Factor, Inc. Mounting spring elements on semiconductor devices
US5717252A (en) * 1994-07-25 1998-02-10 Mitsui High-Tec, Inc. Solder-ball connected semiconductor device with a recessed chip mounting area
US5842628A (en) * 1995-04-10 1998-12-01 Fujitsu Limited Wire bonding method, semiconductor device, capillary for wire bonding and ball bump forming method
JP3207738B2 (ja) * 1996-01-15 2001-09-10 株式会社東芝 樹脂封止型半導体装置及びその製造方法
DE59700264D1 (de) * 1996-03-02 1999-08-26 Esec Sa Verfahren zur Herstellung einer geformten Drahtverbindung
JP2828056B2 (ja) * 1996-08-20 1998-11-25 日本電気株式会社 半導体装置及びその製造方法
JP3344235B2 (ja) * 1996-10-07 2002-11-11 株式会社デンソー ワイヤボンディング方法
US6068180A (en) * 1996-12-18 2000-05-30 Texas Instruments Incorporated System, apparatus, and method for connecting a semiconductor chip to a three-dimensional leadframe
JP3189115B2 (ja) * 1996-12-27 2001-07-16 株式会社新川 半導体装置及びワイヤボンディング方法
JP3370539B2 (ja) * 1997-01-13 2003-01-27 株式会社新川 ワイヤボンディング方法
KR100265461B1 (ko) * 1997-11-21 2000-09-15 윤종용 더미본딩와이어를포함하는반도체집적회로소자

Also Published As

Publication number Publication date
US6380634B1 (en) 2002-04-30
JP2000049185A (ja) 2000-02-18

Similar Documents

Publication Publication Date Title
JP3741184B2 (ja) 半導体装置
US6946380B2 (en) Method for forming bump, semiconductor element having bumps and method of manufacturing the same, semiconductor device and method of manufacturing the same, circuit board, and electronic equipment
US7595551B2 (en) Semiconductor package for a large die
US6372625B1 (en) Semiconductor device having bonding wire spaced from semiconductor chip
US6764880B2 (en) Semiconductor package and fabricating method thereof
US6229205B1 (en) Semiconductor device package having twice-bent tie bar and small die pad
JP4881620B2 (ja) 半導体装置及びその製造方法
US7064425B2 (en) Semiconductor device circuit board, and electronic equipment
USRE35496E (en) Semiconductor device and method of producing the same
US5708304A (en) Semiconductor device
US20030155405A1 (en) Semiconductor device and method of manufacturing the same, circuit board, and electronic equipment
JP6002461B2 (ja) 半導体装置および電子デバイス
US6642082B2 (en) Method for manufacturing a resin-sealed semiconductor device
US5569956A (en) Interposer connecting leadframe and integrated circuit
US20090039509A1 (en) Semiconductor device and method of manufacturing the same
US6268644B1 (en) Semiconductor device
JPH07193162A (ja) ボールグリッドアレイ半導体装置及びその実装基板
WO2003061003A1 (en) Reverse wire bonding techniques
KR20020016083A (ko) 반도체 패키지의 와이어 본딩방법
JPH0684991A (ja) 半導体装置
JP2532304B2 (ja) 半導体チップと、これが搭載される基板との間のワイヤボンディング構造
JP5266371B2 (ja) 半導体装置及びその製造方法
KR940008340B1 (ko) 반도체 장치용 리이드 프레임
KR950000278B1 (ko) 반도체 장치 및 그 제조방법
JPH08241906A (ja) 半導体チップと、これが搭載される基板との間のワイヤボンディング構造およびワイヤボンディング方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040903

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20050427

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20050517

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050712

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20050816

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20051011

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20051101

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20051101

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20091118

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20091118

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101118

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111118

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121118

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131118

Year of fee payment: 8

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term