JP3556175B2 - Semiconductor module and power converter - Google Patents

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a semiconductor module having a circuit pattern conductor member formed on a surface of a base member with an insulating layer interposed therebetween, and brazing a semiconductor chip to the surface of the circuit pattern conductor member, and in particular, relates to a power module. The present invention relates to a power semiconductor module suitable for a switching element for conversion and a power converter using the same.
[0002]
[Prior art]
In recent years, power semiconductor modules with built-in switching elements and IPMs (Intelligent Power Modules) with built-in control circuits have been widely used in fields requiring high reliability, such as automobiles and railway vehicles. There is a particular demand for improved performance.
[0003]
At this time, a switching element such as an IGBT (insulated gate bipolar transistor) is also increased in capacity, and accordingly, the amount of heat generated by the semiconductor element (semiconductor chip) is increased. It has become.
In recent years, hybrid vehicles have been put into practical use. Here, in the case of a hybrid vehicle that travels mainly by a motor (electric motor) when starting, the power semiconductor element generates a large amount of heat for a short time each time the vehicle starts.
[0004]
Therefore, in such an application, although the maximum value of the junction temperature of the power semiconductor element is low, the width of change in heat generation of the power semiconductor element is large, and as a result, the stress change due to thermal expansion and thermal contraction, so-called thermal fluctuation, is also large. And the number of times increases.
And this thermal fluctuation gives thermal fatigue especially to the brazed joint part by solder or the like, so that effective cooling is necessary for providing and maintaining high reliability.
[0005]
By the way, in such a power semiconductor module or IPM, in consideration of a large amount of heat generated by a mounted power semiconductor element, a base made of a metal having a high thermal conductivity and a base having a high thermal conductivity and a high electrical insulation are generally used. In general, it is composed of an insulating substrate made of a conductive material and a conductive layer on which a circuit pattern is formed. At this time, the material of the insulating substrate is selected according to the heat generation of the mounted components. It is customary.
[0006]
In a medium- to large-capacity product that generates a large amount of heat, ceramics such as alumina ceramics and aluminum nitride ceramics, which are expensive but have high thermal conductivity, are mainly used as insulating substrates.
Here, FIGS. 23 and 24 show an example of a conventional power semiconductor module.
[0007]
In this module, as shown in the figure, a ceramic plate 2101 serving as an insulating substrate is attached to one surface (upper surface in the figure) of a base plate 101 made of, for example, copper, and a circuit pattern formed on the ceramic plate 2101 is formed. The power semiconductor element 104 soldered and joined is provided on 2102a.
At this time, the ceramic plate 2101 is soldered to the base plate 101 using the copper pattern 2102b on the back surface.
[0008]
Then, the circuit pattern 2102a is connected by the metal wire 304, and further the wiring for the power external connection terminal 302a and the signal external connection terminal 302b is provided. Is done.
Here, the resin is a synthetic resin, so-called plastic.
[0009]
Next, the base plate 101 is attached to a cooling member with a grease 2105 interposed therebetween. Here, FIG. 23 shows a case where the base plate 101 is attached to a water-cooled cooling member 2104, and FIG. 24 shows an air-cooled type having fins. This is a case where it is attached to the cooling member 2201, and at this time, each is fixed to the cooling member by the mounting bolt 2103.
[0010]
By the way, since various materials having different linear expansion coefficients are used for the power semiconductor module, the base plate 101 is generally warped.
Here, depending on parts and manufacturing processes, the direction of the warpage may be either a concave direction in which the center of the joining surface of the base plate 101 to the cooling member is depressed or a convex direction in which the center of the joining surface is bulging. .
[0011]
If the warp is in the concave direction, the layer thickness of the grease 2105 between the base and the cooling member increases, so that the contact thermal resistance between the base and the cooling member increases, the cooling capacity decreases, and the power semiconductor device operates during operation. The temperature rise of 104 cannot be suppressed, and there is a possibility that the performance may be degraded due to deterioration. In addition, since the thermal fluctuation is increased, the life of the solder joint layer 107 and the like is reduced.
[0012]
On the other hand, when the warpage is in the convex direction, a large bending moment appears on the ceramic substrate 2101 when the mounting bolt 2103 is tightened, and cracks often occur.
Here, since the dielectric strength of the cracked ceramic substrate 2101 is lost, such a semiconductor module becomes unusable.
[0013]
As described above, although the ceramic substrate 2101 has high thermal conductivity and high insulation, it is brittle and easily broken. Therefore, the power semiconductor module using the ceramic substrate 2101 shown in FIGS. There is a danger of causing a fatal failure such as dielectric breakdown due to cracking of the ceramic substrate 2101, so that extreme care must be taken when mounting.
[0014]
On the other hand, in a small-capacity power semiconductor module that generates a relatively small amount of heat, an insulating layer made of a resin that is not very high in heat conductivity but is relatively inexpensive is used as an insulating substrate.
FIG. 25 shows an example of a small-capacity power semiconductor module according to the prior art. In this case, a resin insulating layer 102 is used instead of an insulating substrate.
[0015]
Then, a conductive layer 306 serving as a circuit pattern is provided on the resin insulating layer 102, and the power semiconductor element 104 is solder-bonded on the conductive layer 306. Other configurations are the same as those in FIG. is there.
By the way, even when the resin insulating layer 102 is used, warpage occurs as in the case where the ceramic substrate 2101 is used.
[0016]
Here, when the warpage is in the concave direction, the contact thermal resistance similarly increases, and the cooling capacity decreases.
On the other hand, when the warp is in the convex direction, the resin insulating layer 102 has a smaller longitudinal elastic coefficient than the ceramic substrate 2101 and has a larger extension, so that there is no possibility that the resin insulating layer 102 will be broken.
[0017]
As described above, the resin insulating layer 102 has a small modulus of longitudinal elasticity and a large extension, but has a small thermal conductivity. Therefore, the power semiconductor module using the resin insulating plate 102 of FIG. There is no risk of the substrate breaking, but there is a problem with the cooling capacity.
[0018]
By the way, in all of the above semiconductor modules, grease 2105 is used.
Here, since the grease 2105 is a composite material of a silicon resin and a ceramic powder, the thermal conductivity is not so high.
[0019]
Therefore, although the grease 2105 is superior to the case without the grease, the thermal resistance between the base and the cooling member occupies about several tenths of the thermal resistance between the power semiconductor element 104 and the cooling member due to the presence of the grease 2105. Therefore, if the contact thermal resistance during this period can be reduced, it can greatly contribute to the improvement of the cooling capacity.
[0020]
Therefore, as a countermeasure against the reduction of the cooling capacity due to the contact thermal resistance and the dielectric breakdown due to the crack of the insulating substrate, there is a power semiconductor module shown in FIG.
In the module shown in FIG. 26, the ceramic substrate 2101 is directly joined to the cooling member 2201 by brazing. Therefore, for example, the joint between the base plate 101 and the cooling member 2201 in the semiconductor module shown in FIG. , Does not exist from the beginning.
[0021]
Therefore, in the case of this module, there is, of course, no layer of grease to be interposed at the joint, and there is essentially no contact thermal resistance, so that the cooling capacity is dramatically improved.
Further, as a result, since there is no mounting of the base plate 101 by screw tightening, there is little possibility that cracks are generated by tightening.
[0022]
Moreover, at this time, by forming the cooling member 2201 from a material having a small linear expansion coefficient such as Al-SiC, residual stress due to a temperature change at the time of joining with the ceramic substrate 2101 and thermal stress at the time of operation are reduced. As a result, the risk of cracks occurring in the ceramic substrate 2101 can be further reduced.
[0023]
[Problems to be solved by the invention]
The above prior art does not consider that there is a limit to the improvement of the cooling capability of the semiconductor element, and has a problem in increasing the capacity of the semiconductor module and maintaining high reliability.
First, the prior art shown in FIGS. 23 to 25 has a problem of cracking of the insulating substrate as described above, and there is concern about application to applications requiring high reliability.
[0024]
In addition, these prior arts require careful attention to mounting, and furthermore, since the grease has low thermal conductivity, it is difficult to suppress the contact thermal resistance between the fin and the base even when using the grease. There was a problem in improving the cooling capacity.
[0025]
On the other hand, in the prior art shown in FIG. 26, as described above, by using a material having a small linear expansion coefficient for the cooling member, the residual stress due to a temperature change at the time of joining the ceramic substrate and the thermal stress at the time of operation can be reduced. As a result, there is little possibility that the ceramic substrate is cracked.
[0026]
However, since ceramics is essentially a brittle material, if the area of the ceramic substrate is increased due to the increase in capacity, thermal stress also increases, and the insulating substrate may be broken.
Also, when applied to applications with severe vibration, such as automobiles, there is a risk that the ceramic substrate will crack, and when using a ceramic substrate, careful handling of the power semiconductor module is necessary, Great care must be taken during maintenance.
[0027]
SUMMARY OF THE INVENTION An object of the present invention is to provide a highly reliable power semiconductor module which is excellent in cooling capacity and has a low risk of dielectric breakdown due to cracking of an insulating substrate, and a power converter using the same.
[0028]
[Means for Solving the Problems]
The above object is to provide a circuit pattern conductor formed on a surface of a base member via an insulating layer.Multiple partsPrepared,Multi-partBrazing and joining semiconductor elements to the surface of circuit pattern conductorsdidIn semiconductor modules,The insulating layer is a synthetic resin insulating layer, the semiconductor element is a power semiconductor element, the circuit pattern conductor and the semiconductor element are brazed and joined via a stress buffer plate,At least a portion of the circuit pattern conductor to which the semiconductor element is joined is provided with a fluid flow passage therein.PenetratesFormed of conductive membersThe flow path of the circuit pattern conductor composed of the plurality of portions is connected through an insulating pipe, and the semiconductor element is cooled by the fluid flowing through the flow path.Is achieved in this way.
[0029]
At this time, the number of the conductor members having the flow passages is two or more, and at least two of the conductor members are arranged such that the outlets and the entrances of the flow passages are located on the same straight line, and the base member A circulation system comprising a heat exchange device for cooling a fluid flowing through the flow passage, a pump for flowing a refrigerant through the circulation system, and an electric circuit for driving the pump. A circuit may be provided on the base member.
[0030]
At this time, the heat exchange device may be an air-cooled type, and the cooling air may be used to cool the base member. Alternatively, the base member may have a flow passage therein, and Then, the fluid cooled by the heat exchange device may flow.
[0031]
Furthermore, the flow of the fluid to the flow path of the conductor member having the flow path is performed through an insulating pipe, and the melting point of the insulating pipe is lower than the melting point of the brazing material used for the brazing. The fluid may be configured to be higher, and the fluid may be a refrigerant branched from an air conditioner separately installed.
[0032]
Similarly, the above object is also achieved by using any one of the semiconductor modules described above as a switching element of a main circuit to configure a power conversion device.
[0033]
BEST MODE FOR CARRYING OUT THE INVENTION
First, before specifically describing an embodiment of the present invention, a basic configuration of the embodiment will be briefly described with reference to a plan view of FIG. 1 and a side view of FIG.
In FIGS. 1 and 2, reference numeral 101 denotes a base plate, and a resin insulating layer 102 is provided on one surface of the base plate 101.
Next, reference numeral 103 denotes a conductor member, which is divided into several parts as shown in the figure, thereby forming a circuit pattern conductor to which the semiconductor element is joined.
[0034]
The conductor members 103 are arranged on the base plate 101 via the resin insulation layer 102 and are joined to the base plate 101 by the resin insulation layer 102. Are bonded by the solder bonding layer 107.
[0035]
Here, each of the conductor members 103 is made of a conductive material such as copper, for example, and has a predetermined thickness as shown in FIG. A hole serving as a fluid passage is formed as two reciprocating flow passages 106.
[0036]
These flow passages 106 are interconnected by a pipe made of an insulating material, that is, an insulating pipe 105, and pass through two reciprocating flow paths 106 of each conductor member 103 to form a series of cooling fluid passages. Is formed as a folded path.
[0037]
Therefore, when a fluid serving as a predetermined coolant, for example, water at a predetermined temperature is allowed to flow through the flow passage 106 of each of the conductor members 103 via the pipe 105, the respective conductor members 103 are joined to each other. In addition to forming a circuit pattern conductor for each of the power semiconductor elements 104, it also functions as a member for cooling each of the power semiconductor elements 104.
[0038]
Here, according to the configurations shown in FIGS. 1 and 2, the heat transfer path between each conductor member 103 and the power semiconductor element 104 has only the solder bonding layer 107 interposed therebetween, and has no insulator. Therefore, the thermal resistance between the cooling water in the flow passage 106 and the power semiconductor element 104 is extremely small, and is significantly reduced as compared with the case where the conventional insulating substrate is interposed. Is obtained.
[0039]
Further, at this time, since the pipe 105 is an insulating pipe, required insulation between the conductor members 103 at different potentials can be easily obtained, and the formation of a circuit pattern by the conductor members 103 becomes easy. .
At this time, a plurality of conductor members 103 are arranged on the base plate 101.
[0040]
Therefore, the inlet and outlet of the flow passage 106 of each conductor member 103 are arranged on the same straight line.
Thereby, the inlet and the outlet of each flow passage 106 can be arranged facing each other on a straight line, the pipes can be easily connected, and a simple pipe can be formed.
[0041]
By the way, since each conductor member 103 has a flow passage 106 formed therein, it is necessary to make the conductor member 103 much thicker than a conductor layer in a general circuit pattern.
Here, when the thickness of the conductor member 103 increases, the thermal stress generated during processing and during operation increases due to the difference in linear expansion coefficient from the base plate 101.
[0042]
However, here, by applying a material having a small longitudinal elastic modulus and a large extension to the resin insulating layer 102, even if the conductor member 103 having a large thickness is joined to the base plate 101, the resin insulating layer due to the thermal stress is applied. There is no danger of cracking or insulation degradation due to cracking.
[0043]
At this time, since the heat radiation of the power semiconductor element 104 is caused by the heat transfer of the cooling water flowing in the flow passage 106 of the conductor member 103, the value of the heat conduction of the resin insulating layer 102 does not matter at all. A material that does not cause cracking can be arbitrarily selected.
[0044]
Next, a power semiconductor module according to the present invention will be specifically described with reference to the illustrated embodiments.
However, the present invention is not limited to the embodiments described below.
[0045]
First, FIGS. 3, 4 and 5 show an embodiment in which the present invention is applied to a power semiconductor module including a three-phase power circuit. Here, FIG. 3 shows a planar structure, and FIG. A- of FIG.A '5 is a sectional view, and FIG.B 'Represents a cross section.
[0046]
FIG. 6 is an equivalent circuit of this three-phase power circuit, and the reference numerals of the respective terminals are the same as those of the terminals in FIG. This equivalent circuit is used, for example, as a three-phase inverter.
[0047]
In these figures, in the power semiconductor module according to this embodiment, a resin insulating layer 102 serving as an insulating substrate is provided on one surface (an upper surface in FIG. 4) of a base plate 101, and a power distribution layer is provided thereon. A conductor member 103 having a path 106 and a conductive layer 306 serving as another circuit pattern are joined, and a power semiconductor element 104 is joined to a predetermined position on the conductor member 103 by a solder joint layer 107.
[0048]
The flow passages 106 of the respective conductor members 103 are connected to each other by an insulating pipe 105a, and are drawn out.
Further, another circuit pattern 305 is joined to each conductor member 103 via an insulating layer 401.
[0049]
Furthermore, the power semiconductor element 104, the conductor member 103, the circuit pattern 305, and the conductive layer 306 are connected by thin metal wires 304 (not shown in FIG. 4).
Here, aluminum alloy wires having a diameter of about 300 to 500 μm are used for the thin metal wires 304.
[0050]
The conductor member 103, the circuit pattern 305, and the conductive layer 306 are appropriately provided with an internal connection terminal 308 and an external connection terminal 302, and a printed circuit board 307 is connected to the internal connection terminal 308 (FIG. 3). , Only the outer shape of the printed board 307 is shown by a broken line), and the lint board 307 is provided with external connection terminals 302b as appropriate.
[0051]
Here, in this embodiment, the case 303 is adhered to the base plate 101 via the resin insulating layer 102 (only the outer shape of the case is shown by a broken line in FIG. 3). By using PPS (polyphenylene sulfide) resin having heat resistance, the case 303 can be bonded to the resin insulating layer 102 at the same time as the power semiconductor element 104 and the conductor member 103 are joined by soldering.
[0052]
The conductor member 103, a part of the insulating pipe 105, the conductive layer 305, the circuit pattern 305, the power semiconductor element 104, the thin metal wire 304, the internal wiring 308, and a part of the external connection terminal 302 have high thermal conductivity. It is sealed with the resin 301 and completed as a power semiconductor module.
[0053]
At this time, it is common to use a relatively hard thermosetting resin such as an epoxy resin for the sealing resin 301. A relatively soft material such as silicon gel may be used to prevent the device from being adversely affected.
[0054]
More specifically, first, the base plate 101 is made of lightweight and inexpensive aluminum or aluminum alloy.
This is because the base plate 101 has a relatively large volume in the power semiconductor module, so that aluminum, which is cheaper and lighter than copper, is suitable for manufacturing the power semiconductor module.
[0055]
On the other hand, when importance is placed on the cooling performance, copper having a higher thermal conductivity is used.
At this time, the base plate 101 has a thickness of at least 2 mm, and may have a thickness of about 30 mm in order to sufficiently reduce the thermal resistance due to the spread of heat inside. Here, fins for forced air cooling or water cooling tubes for water cooling may be further provided on the base plate 101.
[0056]
Next, the resin insulating layer 102 serving as an insulating substrate is required to have high insulating properties. Therefore, an epoxy resin in which a filler is dispersed is used. Note that this also provides low thermal resistance.
[0057]
The resin insulating layer 102 made of an epoxy resin in which the filler is dispersed has a small longitudinal elastic modulus and a large extension as compared with the ceramic plate, so that there is no possibility that the resin insulating layer 102 will be broken by thermal stress during joining and during operation. .
[0058]
Here, the filler may be made of an inorganic compound having high thermal conductivity such as silicon oxide or aluminum oxide. At this time, as the content of the filler increases, the thermal resistance of the resin insulating layer 102 increases. Can be reduced.
[0059]
However, since there is a limit to the amount of filler that can be dispersed in the epoxy resin, the content of the filler is usually preferably in the range of 75 to 95%. In this case, the thermal conductivity of the resin insulating layer 102 is 2 to 5 W / MK.
[0060]
On the other hand, another effective method for reducing the thermal resistance of the resin insulating layer 102 is to make it thinner.
However, when the thickness of the resin insulating layer 102 is reduced, the withstand voltage is reduced accordingly, and pinholes and the like are easily generated in the resin insulating layer, which may lower the reliability. There is a limit to the lower limit of the thickness of the layer 102, and the lower limit is about 50 to 250 μm, depending on the required withstand voltage.
[0061]
Here, in the case of the present invention, the resin insulating layer is required to relax thermal stress during processing and operation rather than reducing thermal resistance. Is good.
[0062]
Further, since the resin insulating layer 102 insulates the conductive member 103 and the conductive layer 306 from the base plate 101, a creepage distance corresponding to the withstand voltage is required around them, and thus is insufficient. It is necessary to make up for this by covering the surface of the base plate 101 with an insulating layer.
[0063]
Therefore, in this embodiment, as shown in the figure, the resin insulating layer 102 is provided on the entire surface of the base plate 101 on the conductor member 103 side.
Next, as a material of the conductor member 103, when heat conduction is prioritized, an alloy of copper or aluminum is selected.
[0064]
At this time, although aluminum has the advantage of being lightweight, it has a large linear expansion coefficient, so there is a problem in the reliability of the solder bonding layer 107 for bonding the power semiconductor element 104, and in applications where high reliability is required. Not suitable.
On the other hand, copper has low thermal expansion and high thermal conductivity as compared with aluminum, and therefore is suitable for the conductor member 103.
[0065]
When the reliability of the solder bonding layer 107 that joins the power semiconductor element 104 and the conductor member 103 is taken into consideration, the conductor member 103 has a linear expansion coefficient relatively close to that of silicon forming the power semiconductor element 104, and Select a material with high thermal conductivity.
[0066]
At this time, applicable materials include molybdenum, aluminum / silicon carbide (Al-SiC), a composite material of copper and copper oxide, and the like. Considering the properties, it can be said that a composite material of copper and copper oxide is optimal.
[0067]
This composite material of copper and copper oxide can change the coefficient of linear expansion and the thermal conductivity depending on the ratio of copper and copper oxide. Here, when the ratio of copper oxide is 30%, the coefficient of linear expansion is 13.5 × 10^-6/ K, the thermal conductivity becomes 240 W / mK, which is suitable for the conductor member 103.
[0068]
Next, each conductor member 103 is arranged such that the inlet and the outlet of the flow passage 106 are on a straight line.
When the inlet and the outlet are arranged on a straight line, there is an advantage that the parts can be constituted by the same parts and the piping can be easily connected.
[0069]
Here, in the embodiment of FIG. 3, in addition to one conductor member 103a, three conductor members 103b of the same shape are arranged side by side. If the same components are arranged side by side, the respective inlets and outlets can be connected to the pipes as they are.
[0070]
Next, a pipe connection method at this time will be described.
In the embodiment of FIG. 3, the conductive layer 306 and the conductor member 103 are joined to the resin insulating layer 102 after the pipe connection, and the procedure of the pipe connection at this time will be described with reference to FIGS.
[0071]
These drawings show the pipe connection order, and the pipes are connected by moving the pipe 105 and the conductor member 103 in the direction of the arrow.
Here, in order to assemble efficiently, it is necessary that the inlet and the outlet of the flow passage 106 in each conductor member 103b are on a straight line and that a sufficient space is provided on the side opposite to the pipe connection direction. It is preferable that the piping route is drawn in one stroke as shown in the drawing.
[0072]
By the way, since each conductor member 103 is a conductor forming a circuit pattern and is a part of the wiring of the circuit shown in FIG. 6, the conductor members 103 may have different potentials. It is necessary to use an insulating pipe to connect the flow passages 106 of 103.
[0073]
In the embodiment of FIG. 3, since the conductive members 103 have different potentials, they are connected by an insulating pipe 105a.
However, the pipes between the conductor members having the same potential need not be insulating pipes. Here, the pipe 105b in FIG. 3 is not an insulating pipe.
[0074]
On the other hand, some of the pipes connected to the external cooling water circulation pump and the pipes connected to the water heat exchanger for cooling water whose temperature has increased due to the heat generated by the power semiconductor element are provided with an insulating pipe 105a, Be insulated from heat exchangers.
[0075]
Here, the insulating pipe 105a may be made of, for example, Teflon (trade name). Teflon is highly insulative, flexible and easily bent, so that pipe connection is easy and chemically stable, so that high reliability can be obtained.
[0076]
Next, the flow passage 106 provided in the conductor member 103 is provided in a portion close to the power semiconductor element 104 so that the thermal resistance of the conductor member 103 is reduced.
At this time, if a plurality of flow passages 106 are provided, the heat transfer area increases, so that the cooling efficiency improves.
[0077]
On the other hand, in order to increase the heat transfer area, the flow passage 106 may be bent into a spiral shape as shown in FIG. 10A, and similarly, as shown in FIG. A fin may be provided on the inner surface.
[0078]
Next, a method of providing the flow passage 106 will be described.
First, the first method is a method in which a hole is made in the conductor member 103 as it is using a drilling tool such as a drill to form the flow passage 106.
[0079]
Further, the second method is a method in which the conductor member 103 is previously divided into two members in a state of being divided in the thickness direction, and a groove is formed by cutting both opposing surfaces. In this case, The flow path 106 is obtained by bonding the cut surfaces by brazing or the like.
[0080]
Here, in the first method, although the number of steps is small, the shape is restricted, and the shape of the flow passage is limited to a simple one having a straight line.
On the other hand, in the second method, although the number of steps is increased, as shown in FIG. 10, a curved complicated shape or a passage having a complicated cross section can be created.
Here, the above-described composite material of copper and copper oxide is suitable for a conductor member because it can be cut.
[0081]
Next, the conductive layer 306 is made of an alloy of copper or aluminum in consideration of electric conduction, and is bonded to the surface of the resin insulating layer 102.
Here, aluminum is lightweight and inexpensive, and as described above, is made of the same material as the base plate 101. Therefore, the thermal stress generated in the resin insulating layer 102 during processing is reduced, so that the conductive layer is formed. Suitable as a material.
[0082]
Next, a method of joining the conductive member 103 and the conductive layer 306 to the resin insulating layer 102 will be described. This is performed by applying an adhesive to predetermined positions on the resin insulating layer 102, and placing the conductive member 103 at predetermined positions. Then, after the conductive layer 306 is placed thereon, bonding is performed by heating and pressing.
[0083]
Therefore, if the thicknesses of the conductive member 103 and the conductive layer 306 are approximately equal, uniform pressure is applied to the bonding surface between the conductive member 103 and the conductive layer 306 and the resin insulating layer 102 when pressurized. Can be obtained.
[0084]
On the other hand, the circuit pattern 305 is joined to the conductor member 103 via the insulating layer 401. As a method for forming the insulating layer 401 at this time, there is a first method using a resin.
In this case, by using a silicone resin-based adhesive for the insulating layer 401, bonding and insulation of the circuit pattern 305 to the conductor member 103 can be achieved at the same time.
[0085]
Here, since the circuit pattern 305 and the internal wiring appropriately provided in the circuit pattern have low resistance and generate little heat during operation, there is no need to cool them, and thus the low thermal conductivity of the silicon resin is a problem. No.
[0086]
On the other hand, if a pinhole is formed in the insulating layer 401 due to bubbles or the like at the time of applying the adhesive, the insulating strength is reduced. Therefore, it is desirable to apply the adhesive at this time to a thickness of about 100 μm to 600 μm. The circuit pattern 305 may be bonded at the same time as the heating for soldering the power semiconductor element 104.
[0087]
The second method for forming the insulating layer 401 is to use a ceramic substrate. In this method, an alumina plate having silver deposited on the front and back surfaces is used.
Then, first, one surface of this alumina plate is joined to the conductor member 103 and the conductive layer 306 via solder, and the circuit pattern 305 is joined to the other surface by soldering.
[0088]
The melting point of the solder used at this time is desirably approximately equal to the melting point of the solder bonding layer 107 for bonding the conductor member 103 and the power semiconductor element 104. This is because soldering can be performed simultaneously with the power semiconductor element 104 and the conductor member 103.
[0089]
As the power semiconductor element 104, a MOSFET or an IGBT is used as a switching element.
Here, it is possible to select to use a MOSFET when the breakdown voltage is low and to use an IGBT when a breakdown voltage is required.
In this embodiment, as is apparent from FIG. 6, a MOSFET is used, and a parasitic diode of the MOSFET is used as the freewheel diode.
[0090]
On the other hand, when an IGBT is used as the switching element, a freewheel diode connected in antiparallel to the IGBT is separately mounted.
Further, this embodiment shows a configuration in which a bare chip is mounted. However, even when a discrete device which is transfer-molded on the conductor member 103 is mounted, the transfer device can be implemented similarly to the case of the bare chip, and the effect of the conductor member 103 can be obtained. Is cooled
Next, external connection terminals are appropriately provided on each of the conductor members 103 and the conductive layer 306 as illustrated.
Here, first, the external connection terminal 302a is connected to an external power circuit.
For this reason, the external connection terminal 302 a is inserted in the case 303 in advance, and when the power semiconductor element 104 is soldered to the conductor member 103 and when the case 303 is bonded to the base plate 101, It is preferable that the conductive member 103 and the conductive layer 306 be soldered.
[0091]
Next, the circuit pattern 305 is provided with an internal connection terminal 308 as appropriate.
Therefore, the internal connection terminals 308 are soldered to the printed circuit board 307. The printed circuit board 307 has a driver IC for driving the power semiconductor element 104 and a power circuit composed of the driver IC and the power semiconductor element. And electronic components such as a microcomputer for controlling the operation, a gate resistor, and a capacitor for absorbing surge.
[0092]
Further, the printed circuit board 307 is further provided with an external connection terminal 302b as appropriate, so that it can be connected to an external signal system circuit.
By the way, in the above embodiment, at least one metal selected from the group of Ni, Ag, Pt, Sn, Sb, Cu, Zn, and Pd having good solder wettability on the surface of the conductor member 103, or And an alloy containing at least two metals selected from these groups.
[0093]
here,Since the above-described metals or alloys have good solder wettability, covering the surface of the conductor member 103 with these greatly improves the solderability of the power semiconductor element 104, and as a result, good joining is achieved. As a result, the reliability can be obtained, and the reliability can be further improved.
Here, in the embodiment shown in FIG. 3, the surface of the conductor member 103 is plated with Ni.
[0094]
Next, a range in which the surface of the conductor member 103 is covered with the above-described metal or alloy having good solder wettability in this embodiment will be described.
First, in the embodiment of the present invention, the covering area may be the entire surface of the conductor member 103, or may be a part. That is, at least a part may be used.
[0095]
Here, first, if a part of the surface of the conductor member 103 is covered, the following effects are obtained in this case.
For example, when using a material such as Ag that has good solder wettability but poor bonding property with aluminum, by coating only a part of the material, good solder bonding by Ag plating can be obtained at the solder bonding portion of the power semiconductor element 104. Can be
[0096]
On the other hand, since there is no Ag plating on the portion to which the aluminum metal wire 304 is connected, good bonding can be obtained for both the power semiconductor element 104 and the metal wire 304.
Next, displacement of the power semiconductor element 104 at the time of soldering can be suppressed by covering only a part.
[0097]
At this time, when the solder wettability of the coated material is good, when the solder is melted at the time of joining, the power semiconductor element 104 may float and move from a predetermined position. If only the portion where the semiconductor element 104 is soldered is coated with a material having good solder wettability, the molten solder does not flow out of this portion, so there is no danger of the power semiconductor 104 moving. Therefore, soldering can be performed at a predetermined position.
[0098]
In this case, in order for the fillet (flow surface) of the solder to be formed neatly around the power semiconductor element 104, the thickness of the solder (to be described later) at this time or the power of several times is required. What is necessary is just to cover a range of a size larger than the bonding surface of the semiconductor 104 with a material having good solder wettability.
[0099]
At this time, the thickness of the solder bonding layer 107 is desirably 50 μm or more from the viewpoint of reducing thermal distortion generated at the solder bonding portion.
Accordingly, the range in which the above-mentioned coating processing portion protrudes from the periphery of the power semiconductor 104 is about 50 μm to several hundred μm.
[0100]
The material of the solder bonding layer 107 used for bonding the power semiconductor element 104 and the conductive layer 103 at this time is eutectic composition of tin and lead such as 63% Sn-37% Pb in view of the low process temperature. However, when lead-free solder is required, Sn-Ag, Sn-Ag-Cu, or Sn-Ag-Bi (bismuth) -based solder may be used.
[0101]
Here, when selecting the solder, by making the maximum temperature at the time of joining the solder lower than the heat-resistant temperature of the insulating pipe, the solder joining after connecting the pipe becomes possible.
At this time, since the soldering is generally performed at a temperature higher by about 50 ° C. than the melting point, the melting point of the solder may be lower than the heat-resistant temperature of the insulating pipe 105 by 50 ° C. or more.
[0102]
On the other hand, when the maximum temperature of the solder joint needs to be higher than the heat-resistant temperature of the insulating pipe 105, the pipe may be connected after the solder joint.
Here, when joining the conductor member 103 to the resin insulating layer 102, pressure is required as described above. Therefore, since the solder joining is a step after the step of joining the conductor member 103 to the resin insulating layer 102, the conductor member 103 is already fixed on the base plate 101 when the pipe is connected after the solder joint. I have.
[0103]
In such a case, as shown in FIG. 11, the inlet and outlet of the flow passage 106 formed in the conductor member 103 are configured to face outward, so that pipe connection after soldering is possible. Can be
[0104]
Next, the solder bonding layer 107 for bonding the power semiconductor element 104 to the conductor member 103 will be described with reference to FIGS.
Here, FIG. 13 is an enlarged view of a portion A in FIG. 12. As is clear from these drawings, the solder bonding layer 107 has a stress buffer plate 1001 provided between the layers.
[0105]
Therefore, by using a material having a coefficient of linear expansion between the silicon forming the power semiconductor element 104 and the material forming the conductor member 103 as the material of the stress buffer plate 1001, the solder bonding layer 107 is formed. The generated thermal strain can be reduced.
[0106]
As a material for such a stress buffer plate 1001, nickel or a nickel alloy is suitable because of its high thermal conductivity and good solder wettability despite its relatively low linear expansion coefficient. I have.
[0107]
At this time, by mixing a nickel ball having a diameter equivalent to the thickness of the solder bonding layer 107 in advance into the solder bonding layer 107, the stress buffer plate 1001 is prevented from tilting in the solder bonding layer 107. Since the uniformity of the thickness of the solder bonding layer 107 is maintained, higher reliability can be obtained.
[0108]
Therefore, according to the embodiment described above, it is possible to easily obtain a high-reliability power semiconductor module having an excellent cooling capacity, a low risk of dielectric breakdown due to a crack in an insulating substrate.
As a result, a highly reliable power converter can be easily obtained by using the power semiconductor module according to this embodiment.
[0109]
Next, a semiconductor module according to another embodiment of the present invention will be described with reference to FIGS.
At this time, FIG. 14 shows a planar structure, and FIG.14AA ′ section of FIG.14BB ′ section of FIG.
On the other hand, FIG. 17 shows only the conductor member 103, the pipe 105, the flow passage 106, the resin insulating layer 102, and the power semiconductor element 104 in order to explain the pipe connection method in FIG.
[0110]
Here, first, the difference between the embodiment shown in FIGS. 14 to 17 and the embodiment described with reference to FIGS. 3 to 5 is that, as apparent from a comparison between FIGS. It is in the form of pipe connection between members. In other respects, since they are almost common, only the same reference numerals are given to the same components, and detailed description is omitted.
[0111]
That is, in the embodiment of FIG. 3, the flow passage 106 of each conductor member 103 is formed in a horizontal direction in the figure, and is formed as a folded path at the end of a series of cooling fluid passages. On the other hand, in the embodiment of FIG. 14, the flow passage 106 is in the vertical direction, and a series of cooling fluid passages is formed as a path that sequentially reciprocates and passes through each conductor member 103.
[0112]
Also, as a result, a major difference between these embodiments lies in the application of the insulating pipe 105a in the series of cooling fluid passages.
That is, the point that the insulating pipe 105a is provided at the connection portion with the outside is the same as the embodiment of FIG. 3, but in the embodiment of FIG. This is because it is provided only at a location where the length is short and where there is no bending.
[0113]
More specifically, in the embodiment of FIG. 14, as is clear from FIG. 17, the insulating pipe 105 a is composed of one conductor member 103 e on the upper side and three conductor members 103 on the lower side. It is provided only in the straight portion between 103f.
Here, it is needless to say that, unlike the metal pipe, it is better not to provide the insulating pipe 105a with a large curvature in that there is no fear of insulation deterioration.
[0114]
Therefore, in the embodiment shown in FIGS. 14 to 17, the conductor member 103 is arranged such that, at a place where the pipe needs to be bent, the inlet and the outlet of the pipe have the same potential. It is sufficient to use the insulating pipe 105a only for the pipe between 103e and the conductor member 103f.
[0115]
Then, as a result, the conductor member 103eEach otherIn addition, for the pipe between the conductor members 103f, a pipe 105b made of a conductive material such as a metal that can be easily molded can be used, so that a decrease in reliability due to bending of the pipe can be prevented.
[0116]
Therefore, according to this embodiment, the insulating pipe 105a is limited to a straight line, and there is no need to bend the insulating pipe 105a. Therefore, the possibility of deterioration of the insulating pipe due to bending is extremely small, and the reliability is high.
As a result, the amount of the expensive insulating pipe 105a used can be reduced, and the cost can be reduced.
[0117]
Then this figure14In the embodiment, in order to enable the above piping arrangement, a conductive layer 306 serving as a circuit pattern is provided on the conductor member 103e via the insulating layer 401, and this point also differs from the embodiment of FIG. Are different.
[0118]
Since the conductive layer 306 is provided on the conductor member 103e, a space is formed between the conductor member 103e and the conductor member 103f, piping can be performed with a bend-free conduit, and the piping distance is reduced. In addition, the size of the insulating pipe 105a can be reduced.
[0119]
At this time, since the conductor layer 306 can be formed of a good conductor such as copper or aluminum, it is not necessary to increase the thickness unlike the conductive layer 306 in the embodiment of FIG.
In addition, since a current opposing the conductor member 103e flows through the conductive layer 306, the inductance is relatively reduced.
[0120]
Then, due to the decrease in the inductance, the voltage jump when the power semiconductor element 104 is turned off is reduced, and the possibility of the power semiconductor element 104 being destroyed by an overvoltage can be reduced.
[0121]
Next, FIGS. 18 and 19 show the power semiconductor module shown in FIG. 3 in which a heat exchanger 1802, a pump 1801 for cooling water circulation, a fan 1803, and an electric device for driving auxiliary equipment including these pumps and a fan. In one embodiment of the present invention where a circuit is provided, FIG. 18 shows a planar structure, and FIG. 19 shows a cross section taken along the line AA ′ of FIG.
[0122]
Here, the same components as those in the embodiment described with reference to FIGS. 3 to 5 are denoted by the same reference numerals, and therefore, detailed description of these portions is omitted.
In FIGS. 18 and 19, an electric circuit for driving the auxiliary machine includes a power semiconductor element 1701 for the auxiliary machine, a first printed circuit board 1702 including a conductive layer for mounting the power semiconductor element 1701, and a first printed circuit board. It is composed of two printed circuit boards 1703.
[0123]
First, the printed board 1702 is joined to the resin insulating layer 102 by heating and pressing simultaneously with the conductor member 103.
Here, this printed circuit board 1702 is thinner than the conductor member 103, but can be joined at the same surface pressure as the conductor member 103 by inserting a jig or the like into a portion where a difference in thickness occurs. .
[0124]
Next, the second printed board 1703 is also bonded to the resin insulating layer 102 at the same time as the printed board 1702.
After that, the power semiconductor element 1701 is solder-bonded to the printed board 1702. The solder bonding at this time is performed simultaneously with the power semiconductor element 104 that drives the main engine.
[0125]
On the second printed circuit board 1703, a circuit for controlling the driving of the auxiliary machine and other electronic components are mounted, but a circuit and an electronic component for controlling the driving of the main machine may be further mounted.
The printed board 1703 is electrically connected to the printed board 307 via the internal connection terminal 308 as appropriate.
[0126]
The flow path 106 of each conductive member 103 is connected to the heat exchanger 1802 and the pump 1801 via the insulating pipe 105a, and the cooling water 1804 is circulated by the pump 1801, and the temperature increases due to the heat generated in the power semiconductor element 103. The cooling water 1804 is forcibly air-cooled in the heat exchanger 1802 by cooling air 1805 supplied from a fan 1803.
[0127]
At this time, the cooling air 1805 supplied from the fan 1803 is also guided to the lower surface of the base plate 101, so that heat radiation from the base plate 101 is promoted.
Thus, the power semiconductor element 1701 for auxiliary equipment mounted on the printed board 1702 and the circuit element mounted on the second printed board 1703 can be cooled.
[0128]
At this time, the drive circuit of the main unit is cooled by the conductor member 103 provided with the flow passage 106, but the drive circuit of the auxiliary unit is radiated only by heat transfer from the lower surface of the base plate 101.
Therefore, the first printed board 1702 and the second printed board 1703 are located on the upstream side of the flow of the cooling air 1805 as shown.
[0129]
However, the power of the main engine is larger than that of the auxiliary equipment, and the temperature of the base lower surface of the lower part of the main equipment is lower than the temperature of the base lower surface of the lower part of the auxiliary equipment.highIn such a case, the drive circuit of the main engine may be arranged so as to be located on the windward side of the cooling air 1805.
[0130]
Next, FIG. 20 shows an embodiment of the present invention in which the base plate 101 is also water-cooled. Therefore, as shown in FIG. The cooling water 1804b radiated by the heat exchanger 1801 is circulated through the flow passage 106 provided in the base plate 101.
[0131]
Therefore, according to the embodiment of FIG. 20, even if the amount of heat generated by the auxiliary device drive circuit is increased, it can be easily coped with, the cooling can be always efficiently performed, and high reliability can be achieved.
[0132]
Next, FIG. 21 shows an embodiment in which the semiconductor module according to the present invention is applied to electronic parts of a vehicle equipped with an air conditioner (air conditioner: air conditioner). The main part of the air conditioner is composed of a compressor 2001, a condenser 2002, an expansion valve 2003, and an evaporator 2004, and a predetermined refrigerant such as, for example, CFC substitute is sealed in the inside and the piping.
[0133]
The compressor 2001 is driven by an automobile engine (not shown), whereby the compressor 2001 sucks and compresses a gaseous refrigerant from the evaporator 2004, and compresses the gaseous refrigerant. Is supplied to the condenser 2002. As a result, the inside of the condenser 2002 is operated to be in a high temperature and high pressure state, and the inside of the evaporator 2004 is operated to be in a low pressure state.
[0134]
At this time, the expansion valve 2003 functions to pass only the liquefied refrigerant, so that the high pressure state on the condenser 2002 side and the low pressure state on the evaporator 2004 side are maintained without being broken. To
[0135]
Therefore, when the condenser 2002 is exposed to the normal temperature atmosphere by a fan (not shown) and the air in the cabin of the automobile is exposed to the evaporator 2004, the condenser 2002 The gaseous refrigerant at a high temperature is deprived of heat by the normal temperature air, and its temperature is lowered and liquefied.
[0136]
When the liquefied refrigerant passes through the expansion valve 2003 and is supplied to the evaporator 2004, the liquid refrigerant is in a low-pressure state. It evaporates and boil, gasifies, and the temperature drops rapidly.
[0137]
At this time, the refrigerant gasified in the evaporator 2004 is successively sucked into the compressor 2001, so that the inside of the evaporator 2004 does not become high pressure, and continuous evaporation of the refrigerant is maintained. The air in the vehicle compartment to which the heater 2002 is exposed is cooled, and the function as an air conditioner is obtained.
[0138]
Therefore, in the embodiment of FIG. 21, any one of the semiconductor modules according to the above-described embodiments of the present invention is applied to the air conditioner, and the conductor member 103 of the semiconductor module is connected to the refrigerant path from the evaporator 2004 to the compressor 2001. And a series of cooling fluid passages passing therethrough.
[0139]
Here, the gaseous refrigerant coming out of the evaporator 2004 has substantially the same temperature as the air in the passenger compartment cooled by the air conditioner, and is considerably lower than room temperature. Therefore, according to this embodiment, the power semiconductor The element 103 can be cooled more effectively.
[0140]
Next, FIG. 22 shows the embodiment of FIG. 21 in which a branch pipe 2006 provided with a control valve 2005 is provided in a series of cooling fluid passages passing through the conductor member 103 of the semiconductor module.
Therefore, in the case of this embodiment, since the control valve 2005 is provided, the flow rate of the refrigerant flowing therethrough can be changed according to the usage state of the semiconductor module.
[0141]
When the power semiconductor module according to the above embodiment is applied to an automobile, a target load is a starter generator.
This starter generator is provided in a hybrid vehicle of a system that runs with an electric motor at the time of starting. Therefore, the power semiconductor module applied to the control is used for a short time at the time of starting.
[0142]
That is, in this case, the heat generation of the power semiconductor module is short, and therefore, according to the embodiment of FIG. 22, the control valve 2005 is generated only when the power semiconductor element generates heat.OpenBy circulating the refrigerant of the air conditioner through the conductor member 103, the power semiconductor element can be effectively cooled.
[0143]
【The invention's effect】
According to the present invention, it is possible to provide a highly reliable power semiconductor module, which is excellent in cooling capacity and is less likely to cause dielectric breakdown due to cracking of an insulating substrate, and a power converter using the same.
[Brief description of the drawings]
FIG. 1 is a plan view showing an outline of a semiconductor module according to the present invention.
FIG. 2 is a front view showing an outline of a semiconductor module according to the present invention.
FIG. 3 is a plan view showing a first embodiment of a semiconductor module according to the present invention.
FIG. 4 is a sectional view showing a first lateral embodiment of a semiconductor module according to the present invention.
FIG. 5 is a sectional view showing a first vertical embodiment of a semiconductor module according to the present invention.
FIG. 6 is an equivalent circuit of the first embodiment of the semiconductor module according to the present invention.
FIG. 7 is an explanatory diagram of a pipe connection method of the first embodiment of the semiconductor module according to the present invention.
FIG. 8 is an explanatory diagram of a pipe connection method of the first embodiment of the semiconductor module according to the present invention.
FIG. 9 is an explanatory diagram of a pipe connection method of the first embodiment of the semiconductor module according to the present invention.
FIG. 10 is an explanatory diagram illustrating an example of a conductor member according to the embodiment of the present invention.
FIG. 11 is an explanatory view of a modification of the first embodiment of the semiconductor module according to the present invention.
FIG. 12 is an explanatory diagram of a joint in the first embodiment of the semiconductor module according to the present invention.
FIG. 13 is an enlarged explanatory view of a joint in the first embodiment of the semiconductor module according to the present invention.
FIG. 14 is a plan view showing a second embodiment of the semiconductor module according to the present invention.
FIG. 15 is a cross-sectional view showing a second embodiment of the semiconductor module according to the present invention.
FIG. 16 is a sectional view showing a second embodiment of the semiconductor module according to the present invention.
FIG. 17 is a plan view showing a pipe connection method of a second embodiment of the semiconductor module according to the present invention.
FIG. 18 is a plan view showing a third embodiment of the semiconductor module according to the present invention.
FIG. 19 is a sectional view showing a third embodiment of the semiconductor module according to the present invention.
FIG. 20 is a sectional view showing a fourth embodiment of the semiconductor module according to the present invention.
FIG. 21 is a configuration diagram showing a fifth embodiment of the semiconductor module according to the present invention.
FIG. 22 is a configuration diagram showing a fifth embodiment of the semiconductor module according to the present invention.
FIG. 23 is a sectional view showing a first example of a conventional semiconductor module.
FIG. 24 is a cross-sectional view showing a second example of a semiconductor module according to the related art.
FIG. 25 is a sectional view showing a third example of a semiconductor module according to the related art.
FIG. 26 is a sectional view showing a fourth example of a semiconductor module according to the related art.
[Explanation of symbols]
101 Base plate
102 resin insulation layer
103 conductor member
104 Power semiconductor device
105, 105a Insulated piping
105b Piping (conductor)
106 Flow passage
107 Solder bonding layer
301 resin (for sealing)
302 External connection terminal
303 cases
304 thin metal wire
305 Circuit pattern
306 conductive layer
307 Printed circuit board
308 Internal connection terminal
401 insulation layer
1001 stress buffer plate
1701 Power semiconductor device for auxiliary equipment
1702 First printed circuit board (conductive layer on which power semiconductor element for auxiliary equipment is mounted)
1703 Second printed circuit board
1801 pump
1802 heat exchanger
1803 fan
1804 Cooling water
1805 Cooling air
2001 Compressor
2002 Condenser
2003 expansion valve
2004 evaporator
2005 control valve
2006 Branch piping
2101 Ceramic substrate
2102 Circuit pattern
2103 Mounting bolt
2104 Water-cooled fin
2105 Grease
2201 Air-cooled fin

Claims (11)

On the surface of the base member comprises a plurality of portions of the circuit pattern conductors formed through the insulating layer, the semiconductor modules brazing the semiconductor device on the surface of the circuit pattern conductors of the plurality of portions,
The insulating layer is a synthetic resin insulating layer,
The semiconductor element is a power semiconductor element,
The circuit pattern conductor and the semiconductor element are brazed and joined via a stress buffer plate,
At least a portion of the circuit pattern conductor to which the semiconductor element is joined is formed by a conductor member through which a fluid flow passage passes .
The connection between the flow passages of the circuit pattern conductor composed of the plurality of parts is connected via an insulating pipe,
A semiconductor module , wherein the semiconductor element is cooled by the fluid flowing through the flow passage . In the invention according to claim 1,
The semiconductor module is provided with a conductor member 2 or more having a flow passage, at least two of these conductors member urchin by the outlet and inlet of their flow passage is positioned on the same straight line, the base member A semiconductor module, wherein the semiconductor module is arranged in a semiconductor module. In the invention according to any one of claims 1 and 2 ,
The semiconductor module includes an electric circuit that drives a pump that causes a refrigerant to flow through the flow passage,
A semiconductor module, wherein the electric circuit is provided on the base member . In the invention according to any one of claims 1 to 3 ,
The semiconductor module according to claim 1, wherein the semiconductor module includes a drive circuit unit for the semiconductor element and a control unit for controlling the drive circuit unit . In the invention according to any one of claims 1 to 4 ,
A semiconductor module , wherein the semiconductor element is a MOSFET . In the invention according to any one of claims 1 to 4 ,
A semiconductor module , wherein the semiconductor element is an IGBT . In the invention according to claim 6 ,
The semiconductor module IGBT is characterized by IGBT der Rukoto the freewheeling diode connected in anti-parallel. A semiconductor module comprising a circuit pattern conductor formed on the surface of a base member via an insulating layer, and a semiconductor element brazed to the surface of the circuit pattern conductor.
At least a portion of the circuit pattern conductor to which the semiconductor element is joined is formed of a conductor member through which a fluid flow passage passes.
The semiconductor element is cooled by a fluid flowing through the flow path,
A circulation system comprising a heat exchange device for cooling a fluid flowing through the flow passage,
A pump for flowing a refrigerant through the circulation system,
An electric circuit for driving the pump,
The said electric circuit is installed in the said base member, The semiconductor module characterized by the above-mentioned. In the invention according to claim 8,
2. The semiconductor module according to claim 1, wherein the heat exchange device is an air-cooled type, and the cooling member is configured to cool the base member. In the invention according to claim 8,
The base member has a flow passage therein,
A semiconductor module characterized in that a fluid cooled by the heat exchange device flows through the flow passage. The semiconductor module according to any one of claims 1 to 7 is mainly used. A power conversion device used as a switching element of a road.

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