JP3511970B2 - Nitride semiconductor light emitting device - Google Patents
Nitride semiconductor light emitting deviceInfo
- Publication number
- JP3511970B2 JP3511970B2 JP2000067673A JP2000067673A JP3511970B2 JP 3511970 B2 JP3511970 B2 JP 3511970B2 JP 2000067673 A JP2000067673 A JP 2000067673A JP 2000067673 A JP2000067673 A JP 2000067673A JP 3511970 B2 JP3511970 B2 JP 3511970B2
- Authority
- JP
- Japan
- Prior art keywords
- nitride semiconductor
- substrate
- electrode
- layer
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 84
- 150000004767 nitrides Chemical class 0.000 title claims description 82
- 239000000758 substrate Substances 0.000 claims description 93
- 238000000034 method Methods 0.000 claims description 19
- 239000004020 conductor Substances 0.000 claims description 10
- 238000010030 laminating Methods 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 description 28
- 239000010980 sapphire Substances 0.000 description 28
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 17
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 17
- 239000000463 material Substances 0.000 description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 238000003776 cleavage reaction Methods 0.000 description 7
- 230000007017 scission Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 229910052596 spinel Inorganic materials 0.000 description 4
- 239000011029 spinel Substances 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 229910005540 GaP Inorganic materials 0.000 description 3
- 229910052779 Neodymium Inorganic materials 0.000 description 3
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 3
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- -1 and for example Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229910017980 Ag—Sn Inorganic materials 0.000 description 1
- 229910017401 Au—Ge Inorganic materials 0.000 description 1
- 229910015365 Au—Si Inorganic materials 0.000 description 1
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910004349 Ti-Al Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910004692 Ti—Al Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010981 turquoise Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Light Receiving Elements (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は発光ダイオード、レーザ
ダイオード等の発光デバイス、又はフォトダイオード等
の受光デバイスに使用される窒化物半導体（ＩｎXＡｌY
Ｇａ1-X-YＮ、０≦X、０≦Y、X＋Y≦１）よりなる素子
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a nitride semiconductor (In X Al Y ) used for a light emitting device such as a light emitting diode or a laser diode, or a light receiving device such as a photodiode.
Ga 1-XY N, 0 ≦ X, 0 ≦ Y, X + Y ≦ 1).
【０００２】[0002]
【従来の技術】窒化物半導体はそのバンドギャップエネ
ルギーが１．９ｅＶ〜６．０ｅＶまであるので発光素
子、受光素子等の各種半導体デバイス用として注目され
ており、最近この材料を用いた青色ＬＥＤ、青緑色ＬＥ
Ｄが実用化されたばかりである。2. Description of the Related Art Since nitride semiconductors have bandgap energies of 1.9 eV to 6.0 eV, they have attracted attention for use in various semiconductor devices such as light emitting devices and light receiving devices. Recently, blue LEDs using this material, Turquoise LE
D has just been put to practical use.
【０００３】一般に窒化物半導体素子はＭＢＥ、ＭＯＶ
ＰＥ等の気相成長法を用いて、基板上にｎ型、ｐ型ある
いはｉ型等に導電型を規定した窒化物半導体を積層成長
させることによって得られる。基板には例えばサファイ
ア、スピネル、ニオブ酸リチウム、ガリウム酸ネオジウ
ム等の絶縁性基板の他、炭化ケイ素、シリコン、酸化亜
鉛、ガリウム砒素等の導電性基板が使用できることが知
られているが、窒化物半導体と完全に格子整合する基板
は未だ開発されておらず、現在のところ、格子定数が１
０％以上も異なるサファイアの上に窒化物半導体層を強
制的に成長させた青色、青緑色ＬＥＤ素子が実用化され
ている。Generally, nitride semiconductor devices are MBE, MOV
It can be obtained by stacking and growing a nitride semiconductor whose conductivity type is defined as n-type, p-type, i-type or the like on a substrate using a vapor phase growth method such as PE. It is known that, for example, an insulating substrate such as sapphire, spinel, lithium niobate, and neodymium gallate, as well as a conductive substrate such as silicon carbide, silicon, zinc oxide, and gallium arsenide can be used. Substrates that are completely lattice-matched to semiconductors have not yet been developed and currently have a lattice constant of 1
Blue and blue-green LED devices in which a nitride semiconductor layer is forcibly grown on 0% or more different sapphire have been put into practical use.
【０００４】図６は従来の青色ＬＥＤ素子の構造を示す
模式的な断面図である。従来のＬＥＤ素子は、基本的に
サファイア基板６１の上に窒化物半導体よりなるｎ型層
６２と活性層６３とｐ型層６４とが順に積層されたダブ
ルへテロ構造を有している。前記のようにサファイアは
絶縁性であり基板側から電極を取り出すことができない
ので、同一窒化物半導体層表面に正電極６５と負電極６
６とが設けられた、いわゆるフリップチップ方式の素子
とされている。FIG. 6 is a schematic sectional view showing the structure of a conventional blue LED element. The conventional LED element basically has a double hetero structure in which an n-type layer 62 made of a nitride semiconductor, an active layer 63, and a p-type layer 64 are sequentially stacked on a sapphire substrate 61. As described above, since sapphire has an insulating property and the electrode cannot be taken out from the substrate side, the positive electrode 65 and the negative electrode 6 are formed on the same nitride semiconductor layer surface.
6 is a so-called flip-chip type element.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、サファ
イアを基板とする従来のフリップチップ方式の素子には
数々の問題点がある。まず第一に、同一面側から両方の
電極を取り出すためチップサイズが大きくなり多数のチ
ップがウェーハから得られない。第二に、負電極と正電
極とが水平方向に並んでいるため電流が水平方向に流
れ、その結果電流密度が局部的に高くなりチップが発熱
する。第三にサファイアという非常に硬く、劈開性のな
い基板を使用しているので、チップ化するのに高度な技
術を必要とする。さらにＬＤを実現しようとする際には
基板の劈開性を用いた窒化物半導体の劈開面を共振面と
できないので共振面の形成が非常に困難である。However, the conventional flip-chip type device using sapphire as a substrate has a number of problems. First of all, since both electrodes are taken out from the same side, the chip size becomes large and many chips cannot be obtained from the wafer. Secondly, since the negative electrode and the positive electrode are arranged in the horizontal direction, a current flows in the horizontal direction, and as a result, the current density is locally increased and the chip generates heat. Thirdly, since sapphire, which is a very hard and non-cleavable substrate, is used, it requires a high level of technology to be made into chips. Further, when attempting to realize an LD, it is very difficult to form the resonance surface because the cleavage surface of the nitride semiconductor using the cleavage property of the substrate cannot be used as the resonance surface.
【０００６】以上のような問題を回避するため、上記の
ように炭化ケイ素、シリコン、酸化亜鉛、ガリウム砒
素、ガリウムリン等の導電性基板の上に窒化物半導体を
成長する試みも成されているが、未だ成功したという報
告はされていない。In order to avoid the above problems, attempts have been made to grow a nitride semiconductor on a conductive substrate of silicon carbide, silicon, zinc oxide, gallium arsenide, gallium phosphide, etc. as described above. However, there have been no reports of success.
【０００７】従って本発明はこのような事情を鑑み成さ
れたものであって、その目的とするところは、主として
上下より電極を取り出せる構造を有する窒化物半導体素
子の製造方法、および窒化物半導体素子を提供すること
にある。Therefore, the present invention has been made in view of such circumstances, and an object thereof is to mainly provide a method for manufacturing a nitride semiconductor device having a structure in which electrodes can be taken out from above and below, and a nitride semiconductor device. To provide.
【０００８】[0008]
【課題を解決するための手段】本発明の窒化物半導体発
光素子は、導電性基板上に、電極を介して光の取り出し
側とする窒化物半導体が接着してなり、該窒化物半導体
の最下層はｐ型層であり、最上層がｎ型層であって、該
ｎ型層には部分電極が設けられていることを特徴とす
る。The nitride semiconductor light emitting device of the present invention is a device for extracting light through an electrode on a conductive substrate.
Nitride semiconductor and the side is adhered, lowermost the nitride semiconductor is p-type layer, the top layer is an n-type layer, the
The n-type layer is characterized in that a partial electrode is provided .
【０００９】本発明の方法において、絶縁性基板には前
記のようにサファイア、スピネル、ニオブ酸リチウム、
ガリウム酸ネオジウム等が用いられ、好ましくはサファ
イア、スピネルの上に成長された窒化物半導体が結晶性
に優れている。一方、窒化物半導体に接着する導電性基
板には、導電性を有する基板材料であればどのようなも
のでも良く、例えばＳｉ、ＳｉＣ、ＧａＡｓ、ＧａＰ、
ＩｎＰ、ＺｎＳｅ、ＺｎＳ、ＺｎＯ等を用いることがで
きる。但し、導電性基板は窒化物半導体が積層された絶
縁性基板とほぼ同じ形状を有し、さらにほぼ同じ面積
か、あるいはそれよりも大きな面積を有するウェーハ状
の基板を選択することはいうまでもない。In the method of the present invention, the insulating substrate is sapphire, spinel, lithium niobate,
A neodymium gallate or the like is used, and a nitride semiconductor grown on sapphire or spinel is preferably excellent in crystallinity. On the other hand, the conductive substrate adhered to the nitride semiconductor may be any substrate material having conductivity, such as Si, SiC, GaAs, GaP,
InP, ZnSe, ZnS, ZnO or the like can be used. However, it goes without saying that the conductive substrate has substantially the same shape as the insulating substrate in which the nitride semiconductors are laminated, and a wafer-shaped substrate having substantially the same area or a larger area is selected. Absent.
【００１０】一方、窒化物半導体層が積層されたウェー
ハの絶縁性基板を除去するには、例えば研磨、エッチン
グ等の技術を用いる。通常絶縁性基板の厚さは数百μｍ
あり、窒化物半導体層は厚くても２０μｍ以下であるの
で、研磨により基板を除去する際に研磨厚が制御しにく
い場合は、最初研磨で大まかな部分を除去し、その後エ
ッチングで細かい部分を除去して、電極を形成するのに
必要とする窒化物半導体面を露出させても良い。また例
えばレーザ素子のように絶縁物を電流狭窄層として窒化
物半導体層表面に必要とする素子を作製する場合には、
絶縁性基板全てを除去せずに、選択エッチングにより窒
化物半導体層を露出させるのに必要な部分のみを除去す
ることも可能である。On the other hand, in order to remove the insulating substrate of the wafer on which the nitride semiconductor layer is laminated, techniques such as polishing and etching are used. The thickness of the insulating substrate is usually several hundred μm
However, since the nitride semiconductor layer has a thickness of 20 μm or less even when it is thick, if it is difficult to control the polishing thickness when removing the substrate by polishing, first remove the rough portion by polishing and then remove the fine portion by etching. Then, the nitride semiconductor surface required for forming the electrode may be exposed. Further, for example, in the case of manufacturing an element such as a laser element that requires an insulator as a current confinement layer on the surface of the nitride semiconductor layer,
It is also possible to remove only the portion necessary for exposing the nitride semiconductor layer by selective etching without removing all the insulating substrate.
【００１１】さらに本発明の方法及び素子において、窒
化物半導体層に接着する導電性基板は劈開性を有するこ
とを特徴とする。この劈開性を有する導電性基板には、
例えばＧａＡｓ、ＧａＰ、ＩｎＰ、ＳｉＣ等を好ましく
用いることができる。Further, in the method and device of the present invention, the conductive substrate adhered to the nitride semiconductor layer is cleavable. The conductive substrate having this cleavability,
For example, GaAs, GaP, InP, SiC or the like can be preferably used.
【００１２】次に本発明の方法及び素子は窒化物半導体
層面と導電性基板とを電極、又は導電性材料を介して接
着することを特徴とする。この方法は導電性基板に劈開
性のある基板を使用しても同様に適用可能である。接着
する方法には、導電性基板の接着面と、窒化物半導体層
面とを鏡面として、それら鏡面同士を張り合わせた後、
熱圧着するいわゆるウェーハ接着の手法を用いてもよい
が、電極又は導電性材料を介することにより簡単に接着
することができる。導電性材料は窒化物半導体と導電性
基板を接着できる材料であればどのようなものでも良
く、例えばＩｎ、Ａｕ、ハンダ、銀ペースト等の材料を
使用することができる。Next, the method and device of the present invention are characterized in that the surface of the nitride semiconductor layer and the conductive substrate are bonded to each other via an electrode or a conductive material. This method can be similarly applied even if a cleavable substrate is used as the conductive substrate. The method of bonding, the bonding surface of the conductive substrate, and the nitride semiconductor layer surface as a mirror surface, after bonding these mirror surfaces,
A so-called wafer bonding method of thermocompression bonding may be used, but bonding can be easily performed by interposing an electrode or a conductive material. The conductive material may be any material as long as it can bond the nitride semiconductor and the conductive substrate, and for example, materials such as In, Au, solder and silver paste can be used.
【００１３】また前記接着手法において、電極は窒化物
半導体層表面に形成されたオーミック電極及び／又は導
電性基板表面に形成されたオーミック電極を含むことを
特徴とする。なお、オーミック電極とは、一般に窒化物
半導体表面に形成される膜厚の薄いオーミック電極と、
その電極の上に付けられた膜厚の厚い接着用の金属、例
えばＡｕ、Ｉｎ、Ａｌ等の金属を含んで本明細書ではオ
ーミック電極と定義する。窒化物半導体層表面に形成す
るオーミック電極材料としては、ｎ型層が接着面であれ
ば例えば特開平５−２９１６２１号公報に示されたＡ
ｌ、Ｃｒ、Ｔｉ、Ｉｎの内の少なくとも一種の材料、特
に好ましくはＴｉをｎ型層と接する側とした電極、また
特開平７−４５８６７号公報に示されたＴｉ−Ａｌを含
む材料を挙げることができる。また接着面がｐ型層であ
れば同じく特開平５−２９１６２１号公報に示されたＡ
ｕ、Ｐｔ、Ａｇ、Ｎｉの内の少なくとも一種の材料、特
に好ましくはＮｉをｐ型層と接する側とした電極を挙げ
ることができる。Further, in the above-mentioned bonding method, the electrodes include an ohmic electrode formed on the surface of the nitride semiconductor layer and / or an ohmic electrode formed on the surface of the conductive substrate. Note that the ohmic electrode is generally a thin ohmic electrode formed on the surface of a nitride semiconductor,
In the present specification, an ohmic electrode is defined to include a metal for adhesion having a large film thickness attached on the electrode, for example, a metal such as Au, In, or Al. As the ohmic electrode material formed on the surface of the nitride semiconductor layer, if the n-type layer is an adhesive surface, for example, A disclosed in JP-A-5-291621
At least one material selected from the group consisting of 1, Cr, Ti, and In, particularly preferably an electrode having Ti on the side in contact with the n-type layer, and a material containing Ti—Al disclosed in JP-A-7-45867. be able to. If the adhesive surface is a p-type layer, A shown in JP-A-5-291621 is also used.
An electrode having at least one material selected from u, Pt, Ag, and Ni, particularly preferably Ni on the side in contact with the p-type layer can be mentioned.
【００１４】窒化物半導体はｐ型層が得られにくく、ｐ
型層を得るため例えば特開平３−２１８６２５号公報に
開示されるような電子線照射、また特開平５−１８３１
８９号公報に開示されるような熱的アニーリング処理が
成長後に行われ、最表面のｐ型層が低抵抗化される。こ
のため窒化物半導体ウェーハは最上層がｐ型層になって
いることが多い。そこで、この窒化物半導体ウェーハと
導電性基板を接着する際には、ｐ型層に形成されたオー
ミック電極を介してｐ型の導電性基板とを接着すること
が特に望ましい。Since it is difficult to obtain a p-type layer in a nitride semiconductor,
In order to obtain a mold layer, for example, electron beam irradiation as disclosed in JP-A-3-218625, and JP-A-5-1831.
The thermal annealing treatment as disclosed in Japanese Patent Publication No. 89 is performed after the growth to reduce the resistance of the p-type layer on the outermost surface. Therefore, the uppermost layer of the nitride semiconductor wafer is often a p-type layer. Therefore, when the nitride semiconductor wafer and the conductive substrate are bonded together, it is particularly desirable to bond the p-type conductive substrate through the ohmic electrode formed in the p-type layer.
【００１５】一方、もう片方の接着面の導電性基板に形
成するオーミック電極としては例えば導電性基板がｎ型
ＧａＡｓであれば、Ａｇ−Ｓｎ、Ｉｎ−Ｓｎ、Ｎｉ−Ｓ
ｎ、Ａｕ−Ｓｎ、Ａｕ−Ｓｉ、Ａｕ−Ｇｅ等を用いるこ
とができ、ｐ型ＧａＡｓであれば、Ａｕ−Ｚｎ、Ａｇ−
Ｚｎ、Ａｇ−Ｉｎ等を用いることができる。その他Ｓｉ
Ｃ、Ｓｉ等についても公知のオーミック電極材料を用い
ることができるが前記のようにｐ型の導電性基板をその
導電性基板のオーミック電極を介して接着することが特
に望ましい。On the other hand, as the ohmic electrode formed on the conductive substrate on the other adhesive surface, for example, when the conductive substrate is n-type GaAs, Ag-Sn, In-Sn, Ni-S.
n, Au—Sn, Au—Si, Au—Ge, or the like can be used, and in the case of p-type GaAs, Au—Zn, Ag—
Zn, Ag-In, or the like can be used. Other Si
Although a known ohmic electrode material can be used for C, Si, etc., it is particularly desirable to bond the p-type conductive substrate via the ohmic electrode of the conductive substrate as described above.
【００１６】[0016]
【作用】本発明の方法及び素子では窒化物半導体層に導
電性基板を接着している。つまり、窒化物半導体が絶縁
性基板の上に成長されたウェーハでは、窒化物半導体よ
り得られる各種素子はフリップチップ形式とならざるを
得ないが、導電性基板をウェーハ最上層の窒化物半導体
層に接着することにより、導電性基板が電極を形成する
基板となる。その後、絶縁性基板を除去すると窒化物半
導体層が露出するので、露出した窒化物半導体層面にも
う一方の電極を形成することができ、従来のような電極
が水平方向に並んだ素子ではなく、互いの電極が対向し
た素子を作製することができる。In the method and device of the present invention, the conductive substrate is adhered to the nitride semiconductor layer. In other words, in a wafer in which a nitride semiconductor is grown on an insulating substrate, various elements obtained from the nitride semiconductor must be of the flip-chip type, but the conductive substrate is used as a nitride semiconductor layer on the uppermost layer of the wafer. The conductive substrate becomes a substrate on which the electrodes are formed by being bonded to. After that, since the nitride semiconductor layer is exposed when the insulating substrate is removed, the other electrode can be formed on the exposed nitride semiconductor layer surface, and the conventional electrode is not an element in which the electrodes are horizontally arranged, It is possible to fabricate a device in which the electrodes are opposed to each other.
【００１７】次に接着する導電性基板に劈開性のある材
料を選択すると、劈開性のない絶縁性基板の上に成長さ
れた窒化物半導体でも、接着された導電性基板の劈開性
を利用してチップ状に分割できる。このためチップサイ
ズの小さい素子が得られやすくなり、さらに窒化物半導
体の劈開面を光共振面とするレーザ素子が作製できるよ
うになる。Next, when a material having a cleavability is selected for the conductive substrate to be bonded next, even a nitride semiconductor grown on an insulating substrate having no cleavability can utilize the cleavability of the bonded conductive substrate. Can be divided into chips. Therefore, an element having a small chip size can be easily obtained, and further, a laser element having the cleavage plane of the nitride semiconductor as an optical resonance plane can be manufactured.
【００１８】また窒化物半導体層面と導電性基板とは一
般にウェーハ接着と呼ばれる技術で接着する方法もある
が、特に窒化物半導体層の電極、若しくは導電性基板の
電極、又は導電性材料を介して接着すると導電性基板と
窒化物半導体層との間の電気的特性も安定化するため好
ましい。さらにこの導電性材料としてＡｕ、Ａｌ、Ａｇ
等の窒化物半導体の発光波長を反射できる材料を選択す
れば、発光素子を作製した際、これらの導電性材料が接
着した導電性基板に来る光を反射して、窒化物半導体層
の側に戻す作用があるので発光素子の発光効率が向上す
る。There is also a method of adhering the surface of the nitride semiconductor layer and the conductive substrate by a technique generally referred to as wafer bonding, but in particular, an electrode of the nitride semiconductor layer, an electrode of the conductive substrate, or a conductive material is used. Adhesion is preferable because it also stabilizes the electrical characteristics between the conductive substrate and the nitride semiconductor layer. Further, as the conductive material, Au, Al, Ag
If a material capable of reflecting the emission wavelength of the nitride semiconductor such as is selected, the light coming to the conductive substrate to which these conductive materials are bonded is reflected when the light emitting element is manufactured, and the light is emitted to the side of the nitride semiconductor layer. Since there is a returning action, the luminous efficiency of the light emitting element is improved.
【００１９】特に接着材料として、窒化物半導体層表面
に形成されたオーミック電極及び／又は導電性基板表面
に形成されたオーミック電極を含めば、例えば発光素子
のような発光デバイスを作製すると、抵抗値が低くなり
デバイスのＶｆを低下させる作用がある。In particular, when the ohmic electrode formed on the surface of the nitride semiconductor layer and / or the ohmic electrode formed on the surface of the conductive substrate is included as the adhesive material, when a light emitting device such as a light emitting device is manufactured, the resistance value is increased. Has the effect of lowering the Vf of the device.
【００２０】[0020]
【実施例】以下、実施例で本発明を詳説する。図１乃至
図３は本発明の方法の一工程を説明するウェーハ及び導
電性基板の模式的な断面図であり、図４は実施例１によ
り得られた窒化物半導体発光素子の構造を示す模式的な
断面図であり、以下これらの図を元に実施例１を述べ
る。EXAMPLES The present invention will be described in detail below with reference to examples. 1 to 3 are schematic cross-sectional views of a wafer and a conductive substrate for explaining one step of the method of the present invention, and FIG. 4 is a schematic diagram showing the structure of the nitride semiconductor light emitting device obtained in Example 1. FIG. 3 is a schematic sectional view, and Embodiment 1 will be described below based on these drawings.
【００２１】［実施例１］サファイア基板１の表面に窒
化物半導体層２が積層されたウェーハを用意する。なお
窒化物半導体層２はサファイア基板１から順にドナー不
純物がドープされたＡｌXＧａ1-XＮ（０≦X≦１）より
なるｎ型層２１と、ＩｎYＧａ1-YＮ（０＜Y＜１）より
なる活性層２２と、アクセプター不純物がドープされた
ＡｌXＧａ1-XＮ（０≦X≦１）よりなるｐ型層２３とを
少なくとも有するダブルへテロ構造を有している。なお
最上層のｐ型層２３は４００℃以上のアニーリングによ
り低抵抗化されている。Example 1 A wafer in which a nitride semiconductor layer 2 is laminated on the surface of a sapphire substrate 1 is prepared. The nitride semiconductor layer 2 is an n-type layer 21 made of AlXGa1-XN (0≤X≤1) doped with donor impurities in order from the sapphire substrate 1 and an active layer made of InYGa1-YN (0 <Y <1). 22 and a p-type layer 23 made of AlXGa1-XN (0≤X≤1) doped with acceptor impurities. The uppermost p-type layer 23 has a low resistance by annealing at 400 ° C. or higher.
【００２２】次に図１に示すように窒化物半導体層２の
表面のほぼ全面にＮｉとＡｕを含むオーミック電極３０
を５００オングストロームの膜厚で形成する。つまり窒
化物半導体層２の最上層のｐ型層のほぼ全面にｐ型層と
好ましいオーミックが得られる第一のオーミック電極３
０を形成する。さらにそのオーミック電極３０の上にに
接着性を良くするためにＡｕ薄膜を０．１μｍ形成す
る。Next, as shown in FIG. 1, an ohmic electrode 30 containing Ni and Au is formed on almost the entire surface of the nitride semiconductor layer 2.
With a film thickness of 500 angstrom. That is, the first ohmic electrode 3 capable of obtaining a preferable ohmic contact with the p-type layer on almost the entire surface of the uppermost p-type layer of the nitride semiconductor layer 2.
Form 0. Further, an Au thin film of 0.1 μm is formed on the ohmic electrode 30 in order to improve the adhesiveness.
【００２３】一方、導電性基板として、サファイア基板
１とほぼ同じ大きさを有するｐ型ＧａＡｓ基板５０を用
意し、このｐ型ＧａＡｓ基板５０の表面にＡｕ−Ｚｎよ
りなる第二のオーミック電極４０を５００オングストロ
ームの膜厚で形成する。さらにその第二のオーミック電
極４０の上に接着性を良くするためにＡｕ薄膜を０．１
μｍ形成する。On the other hand, a p-type GaAs substrate 50 having substantially the same size as the sapphire substrate 1 is prepared as a conductive substrate, and a second ohmic electrode 40 made of Au--Zn is formed on the surface of the p-type GaAs substrate 50. It is formed with a film thickness of 500 Å. Further, an Au thin film is formed on the second ohmic electrode 40 by 0.1 μm in order to improve adhesion.
μm is formed.
【００２４】次に、図２に示すように第一のオーミック
電極３０を有する窒化物半導体ウェーハと、第二のオー
ミック電極４０を有するｐ型ＧａＡｓ基板５０とのオー
ミック電極同士を貼り合わせ、加熱により圧着する。但
し、圧着時ウェーハのサファイア基板１とｐ型ＧａＡｓ
基板５０とは平行となるようにする。平行でないと次の
サファイア基板を除去する工程において、露出される窒
化物半導体層の水平面が出ないからである。また第一の
オーミック電極３０と第二のオーミック電極４０とを接
着するためにＡｕを使用したが、この他電極３０と４０
との間にインジウム、錫、ハンダ、銀ペースト等の導電
性材料を介して接着することも可能である。なおｐ型Ｇ
ａＡｓ基板５０を接着する際に窒化物半導体層の劈開性
と、基板５０との劈開方向を合わせて接着してあること
は言うまでもない。Next, as shown in FIG. 2, ohmic electrodes of the nitride semiconductor wafer having the first ohmic electrode 30 and the p-type GaAs substrate 50 having the second ohmic electrode 40 are bonded to each other and heated. Crimp. However, the sapphire substrate 1 and the p-type GaAs of the wafer during pressure bonding
It should be parallel to the substrate 50. This is because if they are not parallel to each other, the exposed horizontal surface of the nitride semiconductor layer does not appear in the subsequent step of removing the sapphire substrate. Further, Au was used to bond the first ohmic electrode 30 and the second ohmic electrode 40, but other electrodes 30 and 40
It is also possible to bond them with a conductive material such as indium, tin, solder or silver paste. P-type G
It is needless to say that when the aAs substrate 50 is bonded, the cleavage property of the nitride semiconductor layer and the cleavage direction with the substrate 50 are matched.
【００２５】次にｐ型ＧａＡｓ基板５０を接着したウェ
ーハを研磨器に設置し、サファイア基板１のラッピング
を行い、サファイア基板を除去して、窒化物半導体層２
のｎ型層２１を露出させる。なおこの工程において、例
えばサファイア基板１を数μｍ程度の厚さが残るように
ラッピングした後、さらに残ったサファイア基板をエッ
チングにより除去することも可能である。サファイア基
板１除去後のウェーハの構造を図３に示す。Next, the wafer to which the p-type GaAs substrate 50 is bonded is set in a polisher, the sapphire substrate 1 is lapped, the sapphire substrate is removed, and the nitride semiconductor layer 2 is removed.
The n-type layer 21 is exposed. In this step, for example, after the sapphire substrate 1 is lapped so that a thickness of about several μm remains, the remaining sapphire substrate can be removed by etching. The structure of the wafer after removing the sapphire substrate 1 is shown in FIG.
【００２６】最後に露出したｎ型層２１の表面をポリシ
ングした後、ｎ型層にオーミック用の電極としてＴｉ−
Ａｌよりなる負電極２５を形成し、一方ｐ型ＧａＡｓ基
板５０には同じくオーミック電極としてＡｕ−Ｚｎより
なる正電極５５を全面に形成する。After polishing the surface of the finally exposed n-type layer 21, Ti-- serves as an ohmic electrode on the n-type layer 21.
A negative electrode 25 made of Al is formed, while a positive electrode 55 made of Au—Zn is also formed on the entire surface of the p-type GaAs substrate 50 as an ohmic electrode.
【００２７】以上のようにして正電極および負電極が形
成されたウェーハを、ｐ型ＧａＡｓ基板の劈開性を利用
して２００μｍ角の発光チップに分離する。分離後の発
光チップの構造を示す模式的な断面図を図４に示す。こ
の発光チップは電極２５と５５間に通電することによ
り、活性層２２が発光するＬＥＤ素子の構造を示してい
る。この発光素子は活性層２２の発光が第一のオーミッ
ク電極３０とｐ型層２３との界面で反射され、ｐ型Ｇａ
Ａｓ基板５０に吸収されることがないので、従来の発光
素子に比べて発光出力が５０％以上増大した。The wafer on which the positive electrode and the negative electrode are formed as described above is separated into 200 μm square light emitting chips by utilizing the cleavage property of the p-type GaAs substrate. A schematic cross-sectional view showing the structure of the light emitting chip after separation is shown in FIG. This light emitting chip shows a structure of an LED element in which the active layer 22 emits light when electricity is applied between the electrodes 25 and 55. In this light emitting device, the light emitted from the active layer 22 is reflected at the interface between the first ohmic electrode 30 and the p-type layer 23, and the p-type Ga
Since it was not absorbed by the As substrate 50, the light emission output increased by 50% or more as compared with the conventional light emitting device.
【００２８】またこの例は絶縁性基板がサファイア、導
電性基板がｐ型ＧａＡｓについて説明したが、絶縁性基
板にはサファイアの他に例えば前記したスピネル、ネオ
ジウムガレートのような絶縁性基板を用いても良く、ま
た導電性基板にはＳｉ、ＺｎＯのような基板を用いても
良い。In this example, the insulating substrate is sapphire and the conductive substrate is p-type GaAs. However, in addition to sapphire, an insulating substrate such as spinel or neodymium gallate is used as the insulating substrate. Alternatively, a substrate such as Si or ZnO may be used as the conductive substrate.
【００２９】［実施例２］実施例１においてサファイア
基板１をラッピングする際、サファイア基板１が５μｍ
の膜厚で残るようにラッピングする。次に残ったサファ
イア基板１の表面に電流狭窄層が形成できるような形状
のマスクを形成し、エッチング装置でマスク開口部のサ
ファイア基板１をエッチングにより除去し、ｎ型層２１
の一部を露出させる。露出後同様にしてｎ型層に負電極
２５とｐ型ＧａＡｓ基板５０に正電極５５を形成する。Example 2 When lapping the sapphire substrate 1 in Example 1, the sapphire substrate 1 was 5 μm.
Lapping so that the remaining film thickness remains. Next, a mask having a shape capable of forming a current confinement layer is formed on the surface of the remaining sapphire substrate 1, and the sapphire substrate 1 in the mask opening is removed by etching with an etching device.
Expose part of. After exposure, the negative electrode 25 is formed on the n-type layer and the positive electrode 55 is formed on the p-type GaAs substrate 50 in the same manner.
【００３０】次にｐ型ＧａＡｓ基板５０の劈開性を用い
て、チップ状に分離してレーザ素子とする。図５はその
レーザ素子の構造を示す模式的な断面図であり、故意に
残したサファイア基板１がレーザ素子の電流狭窄層とし
て作用している。この例は電流狭窄層としてサファイア
基板を残す例を示したが、この他にレーザ素子の電流狭
窄層を形成するには実施例１のようにサファイア基板１
を全部除去してから、例えばＳｉＯ2、ＴｉＯ2のような
絶縁膜を露出した窒化物半導体層の上に形成しても良
い。Next, using the cleavage property of the p-type GaAs substrate 50, it is separated into chips to form a laser device. FIG. 5 is a schematic cross-sectional view showing the structure of the laser element, and the sapphire substrate 1 left intentionally acts as a current confinement layer of the laser element. This example shows an example in which the sapphire substrate is left as the current confinement layer, but in addition to this, the sapphire substrate 1 can be formed as in Example 1 to form the current confinement layer of the laser device.
After removing all of them, an insulating film such as SiO 2 or TiO 2 may be formed on the exposed nitride semiconductor layer.
【００３１】[0031]
【発明の効果】以上説明したように、本発明の方法によ
ると導電性基板を有する窒化物半導体素子が実現できる
ので、チップサイズの小さい素子を提供することができ
る。また素子に形成した電極同士が対向しているので、
電流が窒化物半導体層に均一に流れ発熱量が小さくな
り、レーザ素子を実現することも可能となる。さらに容
易に窒化物半導体の劈開が可能となり、その劈開面を共
振器とできるためレーザ素子の作製が容易となる。さら
にまた発光デバイスを実現すると、窒化物半導体層と導
電性基板とを接着した電極により、窒化物半導体層の発
光が電極表面で反射されるので発光出力も増大させるこ
とができる。As described above, according to the method of the present invention, a nitride semiconductor device having a conductive substrate can be realized, so that a device having a small chip size can be provided. Also, since the electrodes formed on the element are facing each other,
An electric current flows evenly through the nitride semiconductor layer, the amount of heat generated is reduced, and it is possible to realize a laser device. Further, the nitride semiconductor can be cleaved easily, and the cleaved surface can be used as a resonator, so that the laser device can be easily manufactured. Further, when the light emitting device is realized, the light emission of the nitride semiconductor layer is reflected on the electrode surface by the electrode to which the nitride semiconductor layer and the conductive substrate are adhered, so that the light emission output can be increased.
【００３２】従来の窒化物半導体ＬＥＤは図６に示すよ
うにｐ型層６４の表面のほぼ全面に光を透過する正電極
６５が形成されていた。これはｐ型層の電流が広がりに
くいことによる。この正電極６５により発光する光の５
０％以上が吸収されていた。しかし本発明の素子による
と図４および図５に示すように低抵抗なｎ型層２１が最
上層となるので、従来のように全面電極を設ける必要が
なくなり、小さな部分電極でよい。従って窒化物半導体
層側からの光の取り出し効率が飛躍的に向上し発光出力
が向上する。このように本発明は窒化物半導体を用いた
デバイスを実現する上で産業上の利用価値は非常に大き
い。In the conventional nitride semiconductor LED, as shown in FIG. 6, a positive electrode 65 which transmits light is formed on almost the entire surface of the p-type layer 64. This is because it is difficult for the current in the p-type layer to spread. 5 of the light emitted by this positive electrode 65
0% or more was absorbed. However, according to the device of the present invention, the n-type layer 21 having a low resistance is the uppermost layer as shown in FIGS. Therefore, the light extraction efficiency from the nitride semiconductor layer side is dramatically improved, and the light emission output is improved. Thus, the present invention has a great industrial utility value in realizing a device using a nitride semiconductor.
【図１】 本発明の方法の一工程を説明する窒化物半導
体ウェーハの模式断面図。FIG. 1 is a schematic cross-sectional view of a nitride semiconductor wafer explaining one step of the method of the present invention.
【図２】 本発明の方法の一工程を説明する窒化物半導
体ウェーハの模式断面図。FIG. 2 is a schematic cross-sectional view of a nitride semiconductor wafer explaining one step of the method of the present invention.
【図３】 本発明の方法の一工程を説明する窒化物半導
体ウェーハの模式断面図。FIG. 3 is a schematic cross-sectional view of a nitride semiconductor wafer explaining one step of the method of the present invention.
【図４】 本発明の一実施例に係る窒化物半導体素子の
構造を示す模式断面図。FIG. 4 is a schematic cross-sectional view showing the structure of a nitride semiconductor device according to an example of the present invention.
【図５】 本発明の他の実施例に係る窒化物半導体素子
の構造を示す模式断面図。FIG. 5 is a schematic cross-sectional view showing the structure of a nitride semiconductor device according to another embodiment of the present invention.
【図６】 従来の窒化物半導体発光素子の構造を示す模
式断面図。FIG. 6 is a schematic cross-sectional view showing the structure of a conventional nitride semiconductor light emitting device.
１・・・・サファイア基板 ２・・・・窒化物半導体層 ２１・・・・ｎ型層 ２２・・・・活性層 ２３・・・・ｐ型層 ３０・・・・第一のオーミック電極 ４０・・・・第二のオーミック電極 ５０・・・・ｐ型ＧａＡｓ基板 ２５・・・・負電極 ５５・・・・正電極 1 ... Sapphire substrate 2 ··· Nitride semiconductor layer 21 ... N-type layer 22 ... Active layer 23 ... P-type layer 30 ... First ohmic electrode 40 ... Second ohmic electrode 50 ... P-type GaAs substrate 25 ... Negative electrode 55 ・ ・ ・ ・ Positive electrode
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 33/00 ─────────────────────────────────────────────────── ─── Continuation of the front page (58) Fields surveyed (Int.Cl. 7 , DB name) H01L 33/00
Claims (5)
出し側とする窒化物半導体が接着してなり、該窒化物半
導体の最下層はｐ型層であり、最上層がｎ型層であっ
て、該ｎ型層には部分電極が設けられていることを特徴
とする窒化物半導体発光素子。1. A method of collecting light through an electrode on a conductive substrate.
Nitride semiconductor and out side is adhered, lowermost the nitride semiconductor is p-type layer, the top layer is a n-type layer
Te, nitride semiconductor light emitting element characterized in that the partial electrodes on the n-type layer is provided.
れたオーミック電極及び／又は導電性基板表面に形成さ
れたオーミック電極を含むことを特徴とする請求項１に
記載の窒化物半導体発光素子。2. The nitride semiconductor light emitting device according to claim 1, wherein the electrode includes an ohmic electrode formed on the surface of the nitride semiconductor and / or an ohmic electrode formed on the surface of the conductive substrate. .
層面が、前記ｐ型層であり、前記電極及び／又は導電性
材料が、ｐ型層のほぼ全面に形成されていることを特徴
とする請求項１又は２に記載の窒化物半導体発光素子。3. The nitride semiconductor layer surface to which the conductive substrate is adhered is the p-type layer, and the electrode and / or the conductive material is formed on almost the entire surface of the p-type layer. The nitride semiconductor light emitting device according to claim 1 or 2.
されたことを特徴とする請求項１に記載の窒化物半導体
発光素子。4. The nitride semiconductor according to claim 1, wherein the electrode is formed by laminating a conductive material in a multilayer structure.
Light emitting element.
物半導体の発光波長を反射できることを特徴とする請求
項１乃至４のいずれかに記載の窒化物半導体発光素子。5. The nitride semiconductor light emitting device according to claim 1, wherein the electrode and / or the conductive material can reflect the emission wavelength of the nitride semiconductor .
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| JP14847095A JP3259811B2 (en) | 1995-06-15 | 1995-06-15 | Method for manufacturing nitride semiconductor device and nitride semiconductor device |
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