JP3456911B2 - Liquid sealing resin composition and semiconductor device - Google Patents
Liquid sealing resin composition and semiconductor deviceInfo
- Publication number
- JP3456911B2 JP3456911B2 JP35852098A JP35852098A JP3456911B2 JP 3456911 B2 JP3456911 B2 JP 3456911B2 JP 35852098 A JP35852098 A JP 35852098A JP 35852098 A JP35852098 A JP 35852098A JP 3456911 B2 JP3456911 B2 JP 3456911B2
- Authority
- JP
- Japan
- Prior art keywords
- liquid
- weight
- formula
- resin composition
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000007788 liquid Substances 0.000 title claims description 42
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 239000011342 resin composition Substances 0.000 title claims description 12
- 238000007789 sealing Methods 0.000 title description 6
- 229920005989 resin Polymers 0.000 claims description 37
- 239000011347 resin Substances 0.000 claims description 37
- 239000004643 cyanate ester Substances 0.000 claims description 20
- 150000001875 compounds Chemical class 0.000 claims description 10
- 239000011256 inorganic filler Substances 0.000 claims description 9
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 6
- 239000003054 catalyst Substances 0.000 claims description 4
- 150000004696 coordination complex Chemical class 0.000 claims description 4
- 150000001913 cyanates Chemical class 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 239000003822 epoxy resin Substances 0.000 description 6
- -1 phenylene cyanate Chemical compound 0.000 description 6
- 229920000647 polyepoxide Polymers 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000000945 filler Substances 0.000 description 4
- 229920003986 novolac Polymers 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 150000008065 acid anhydrides Chemical class 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- DOYKFSOCSXVQAN-UHFFFAOYSA-N 3-[diethoxy(methyl)silyl]propyl 2-methylprop-2-enoate Chemical compound CCO[Si](C)(OCC)CCCOC(=O)C(C)=C DOYKFSOCSXVQAN-UHFFFAOYSA-N 0.000 description 1
- UDWIZRDPCQAYRF-UHFFFAOYSA-N 3-[diethoxy(methyl)silyl]propyl prop-2-enoate Chemical compound CCO[Si](C)(OCC)CCCOC(=O)C=C UDWIZRDPCQAYRF-UHFFFAOYSA-N 0.000 description 1
- LZMNXXQIQIHFGC-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propyl 2-methylprop-2-enoate Chemical compound CO[Si](C)(OC)CCCOC(=O)C(C)=C LZMNXXQIQIHFGC-UHFFFAOYSA-N 0.000 description 1
- MCDBEBOBROAQSH-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propyl prop-2-enoate Chemical compound CO[Si](C)(OC)CCCOC(=O)C=C MCDBEBOBROAQSH-UHFFFAOYSA-N 0.000 description 1
- URDOJQUSEUXVRP-UHFFFAOYSA-N 3-triethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CCO[Si](OCC)(OCC)CCCOC(=O)C(C)=C URDOJQUSEUXVRP-UHFFFAOYSA-N 0.000 description 1
- XDQWJFXZTAWJST-UHFFFAOYSA-N 3-triethoxysilylpropyl prop-2-enoate Chemical compound CCO[Si](OCC)(OCC)CCCOC(=O)C=C XDQWJFXZTAWJST-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- KBQVDAIIQCXKPI-UHFFFAOYSA-N 3-trimethoxysilylpropyl prop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C=C KBQVDAIIQCXKPI-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 125000005595 acetylacetonate group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical group C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- WOXXJEVNDJOOLV-UHFFFAOYSA-N ethenyl-tris(2-methoxyethoxy)silane Chemical compound COCCO[Si](OCCOC)(OCCOC)C=C WOXXJEVNDJOOLV-UHFFFAOYSA-N 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 125000005609 naphthenate group Chemical group 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- GQIUQDDJKHLHTB-UHFFFAOYSA-N trichloro(ethenyl)silane Chemical compound Cl[Si](Cl)(Cl)C=C GQIUQDDJKHLHTB-UHFFFAOYSA-N 0.000 description 1
- 238000005829 trimerization reaction Methods 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
- 239000005050 vinyl trichlorosilane Substances 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
【0001】[0001]
【発明の属する技術分野】本発明は、流動性、信頼性に
優れた液状封止樹脂組成物に関するものである。TECHNICAL FIELD The present invention relates to a liquid encapsulating resin composition having excellent fluidity and reliability.
【0002】[0002]
【従来の技術】近年半導体チップの大型化、パッケージ
の多様化に伴い周辺材料である樹脂材料に対する信頼性
の要求は年々厳しいものとなってきている。従来はリー
ドフレームに半導体チップを接着しモールド樹脂で封止
したパッケージが主流であったが、多ピン化の限界から
ボールグリッドアレイ(BGA)の様なパッケージが増
えてきている。BGAはモールド樹脂又は液状樹脂によ
り封止される。更に表面実装法により実装されるため封
止材料はいわゆる耐半田クラック性が必要である。2. Description of the Related Art With the recent increase in size of semiconductor chips and diversification of packages, demands for reliability of resin materials as peripheral materials have become stricter year by year. Conventionally, a package in which a semiconductor chip is adhered to a lead frame and sealed with a molding resin has been the mainstream, but packages such as a ball grid array (BGA) have been increasing due to the limit of increasing the number of pins. The BGA is sealed with a mold resin or a liquid resin. Furthermore, since it is mounted by the surface mounting method, the sealing material needs to have so-called solder crack resistance.
【0003】耐半田クラック性に重要な因子は (1)
被着体との接着性、その耐湿信頼性、(2)封止樹脂の
線膨張係数(α1)領域の広いこと(高Tg)が挙げられ
る。更にイオン性不純物が少ないこと、熱衝撃試験に対
し優れた特性を有する事等が重要となる。またBGAの
多くは、基板のキャビティに半導体素子が接着し基板と
素子はワイヤーボンディングにより電気的的接合が行わ
れ、そのワイヤーの間隔は非常に狭いため、液状樹脂に
は優れた流動性が必要である。Important factors for solder crack resistance are (1)
Adhesiveness to an adherend, its moisture resistance reliability, and (2) wide encapsulation resin linear expansion coefficient (α1) range (high Tg). Furthermore, it is important that there are few ionic impurities and that they have excellent properties in the thermal shock test. Also, in many BGAs, the semiconductor element is bonded to the cavity of the substrate, and the substrate and the element are electrically joined by wire bonding, and the distance between the wires is very narrow, so the liquid resin needs to have excellent fluidity. Is.
【0004】これらの条件を満たす樹脂としては液状エ
ポキシ樹脂、液状酸無水物、球状シリカフィラーを主成
分とした組成物が商品化されている。酸無水物硬化のた
めTgが高い、樹脂粘度が低いためフィラーを高充填でき
ることにより線膨張係数を低くできる、流動性に優れる
等の長所がある反面、耐水性に劣るという致命的な欠陥
があった。また液状エポキシ樹脂、液状芳香族アミン、
球状シリカフィラーを主成分とした組成物も提案されて
いる。しかし、これらの液状封止樹脂は、耐水性、耐半
田クラック性に優れるものの、Tgが低く、特に熱衝撃試験に
おいて硬化樹脂表面にクラックが生じるといった問題が
あった。As resins satisfying these conditions, liquid epoxy resins, liquid acid anhydrides, and compositions containing spherical silica filler as a main component have been commercialized. It has high Tg due to acid anhydride curing, low linear expansion coefficient due to high filler filling due to low resin viscosity, and excellent fluidity, but on the other hand, it has a fatal defect of poor water resistance. It was Liquid epoxy resin, liquid aromatic amine,
A composition containing a spherical silica filler as a main component has also been proposed. However, although these liquid encapsulating resins are excellent in water resistance and solder crack resistance, they have a low Tg, and there is a problem that cracks occur on the surface of the cured resin particularly in a thermal shock test.
【0005】他の液状熱硬化型樹脂については液状シア
ネート系が考えられる。この樹脂系は高Tgの硬化物が得
られるが一方耐湿接着性に劣る、流動性に劣る等の欠点
があり、BGA等の半導体封止用途として実用化されて
いなかった。For other liquid thermosetting resins, liquid cyanate type is considered. Although this resin system provides a cured product having a high Tg, it has drawbacks such as inferior moisture-resistant adhesiveness and inferior fluidity, and has not been put to practical use for encapsulating semiconductors such as BGA.
【0006】[0006]
【発明が解決しようとする課題】本発明は、これらの問
題を解決するため鋭意検討した結果、流動性、信頼性に
優れた液状封止樹脂組成物を提供するものである。DISCLOSURE OF THE INVENTION The present invention provides a liquid encapsulating resin composition having excellent fluidity and reliability as a result of extensive studies to solve these problems.
【0007】[0007]
【発明を解決するための手段】式(1)並びに式(2)
及びまたは式(3)で示される少なくとも2種以上の液
状シアネートエステル(A)100重量部に対して、金
属錯体触媒(B)0.15から0.9重量部、式(4)
で示されるアルコキシシラン系化合物(C)1から15
重量部、絶縁性無機フィラーからなる液状封止樹脂組成
物である。更に該液状シアネートエステル中に式(2)
及びまたは式(3)に示すシアネートエステルが15重
量%から30重量%含まれ、該絶縁性無機フィラーが全
液状樹脂に対して60〜80重量%であり、該絶縁性無
機フィラーの形状が球状であり、該絶縁性無機フィラー
の平均粒径が0.5μmから12μmで、かつ最大粒径
が70μm 以下である。Means for Solving the Invention Equation (1) and Equation (2)
And / or 0.15 to 0.9 parts by weight of the metal complex catalyst (B) with respect to 100 parts by weight of the liquid cyanate ester (A) represented by the formula (3), the formula (4)
Alkoxysilane compounds (C) 1 to 15
It is a liquid encapsulating resin composition comprising parts by weight and an insulating inorganic filler. Furthermore, in the liquid cyanate ester, the compound of formula (2)
And / or the cyanate ester represented by the formula (3) is contained in an amount of 15 to 30% by weight, the insulating inorganic filler is 60 to 80% by weight based on the total liquid resin, and the shape of the insulating inorganic filler is spherical. The average particle size of the insulating inorganic filler is 0.5 μm to 12 μm, and the maximum particle size is 70 μm or less.
【0008】[0008]
【化1】 [Chemical 1]
【化2】
また、上記の液状封止樹脂組成物で半導体を封止してな
る半導体装置であり、好ましくは、該半導体がボールグ
リッドアレイである半導体装置である。[Chemical 2] Further, it is a semiconductor device obtained by encapsulating a semiconductor with the above liquid encapsulating resin composition, and preferably the semiconductor device is a ball grid array.
【0009】[0009]
【発明の実施の形態】本発明に用いられるシアネートエ
ステル(A)としては式(1)並びに式(2)及び又は
式(3)からなる。更には全シアネートエステル中に式
(2)及び又は式(3)に示すシアネートエステルを1
5重量%から30重量%含むことが望ましい。BEST MODE FOR CARRYING OUT THE INVENTION The cyanate ester (A) used in the present invention comprises formula (1) and formula (2) and / or formula (3). Furthermore, the cyanate ester represented by the formula (2) and / or the formula (3) is added to all cyanate esters.
It is desirable to contain 5 to 30% by weight.
【0010】これは、本発明に用いられる式(1)に示
すシアネートエステルは低粘度の液状で封止樹脂材に好
適ではあるが硬化物の耐湿性はやや劣る。一方、式
(2)、(3)に示すシアネートエステルは分子中にア
ルキルを有しており耐湿性を有するためである。本発明
に用いられる式(2)で表されるシアネートエステルと
しては、4,4'-メチリデンビス[2,6-ジメチルフェニ
レンシアネート]、4,4'-(1-メチルエチリデン)ビス
[2-メチルフェニレンシアネート]、4,4'-(1-メチル
エチリデン)ビス[2,6-ジメチルフェニレンシアネー
ト]、4,4'-メチレンビス[2-メチルフェニレンシアネ
ート]、4,4'-(1-メチル-エチリデン)ビス[2-(1,1-
ジメチルエチル)フェニレンシアネート]、等があり、式
(3)で表されるシアネートエステルとしては、フェノ
ールノボラック型シアネートエステル、クレゾールノボ
ラック型シアネートエステルなどがある。本材料を用い
ることにより液状封止実装の信頼性および耐湿信頼性、
流動性を大幅に向上させることができる。This is because the cyanate ester represented by the formula (1) used in the present invention is a liquid having a low viscosity and is suitable for a sealing resin material, but the cured product is slightly inferior in moisture resistance. On the other hand, the cyanate ester represented by the formulas (2) and (3) has an alkyl in the molecule and has moisture resistance. The cyanate ester represented by the formula (2) used in the present invention is 4,4′-methylidene bis [2,6-dimethylphenylene cyanate], 4,4 ′-(1-methylethylidene) bis.
[2-Methylphenylene cyanate], 4,4 '-(1-methylethylidene) bis [2,6-dimethylphenylene cyanate], 4,4'-methylenebis [2-methylphenylene cyanate], 4,4'-( 1-methyl-ethylidene) bis [2- (1,1-
Dimethylethyl) phenylene cyanate] and the like, and examples of the cyanate ester represented by the formula (3) include phenol novolac type cyanate ester and cresol novolac type cyanate ester. By using this material, reliability of liquid sealing mounting and reliability of moisture resistance,
Liquidity can be greatly improved.
【0011】ここで全シアネートエステル中に含まれる
式(2)及び又は(3)に示すシアネートエステルが1
5重量%未満の場合、吸湿後の密着性が低く、30重量
%よりも多いと製品粘度が増大し、流動性は低下する。
又、粘度が許容範囲を超えない程度に製品の冷凍保存時
の結晶化を防止する目的から、これらのシアネートエス
テルを予め加熱して10から30重量%程度反応させた
ものを配合しても良い。また本発明の効果を逸脱しない
範囲でフェノ―ル化合物から合成される他のシアネ―ト樹脂を添
加することもできる。その添加量は全シアネ―ト樹脂に対
し、30重量%以下であることが好ましい。Here, the cyanate ester represented by the formula (2) and / or (3) contained in all the cyanate esters is 1
If it is less than 5% by weight, the adhesion after moisture absorption is low, and if it is more than 30% by weight, the product viscosity increases and the fluidity decreases.
For the purpose of preventing crystallization of the product during freezing storage so that the viscosity does not exceed the allowable range, these cyanate esters may be preheated and reacted at about 10 to 30% by weight. . Further, other cyanate resin synthesized from a phenol compound can be added within a range not departing from the effects of the present invention. The addition amount thereof is preferably 30% by weight or less based on the entire cyanate resin.
【0012】一般に1分子内に少なくとも2個以上のシ
アネート基を有する化合物は、金属錯体存在下、加熱す
ることにより容易に3量化反応による架橋が起こりTgの
高い樹脂硬化物を与える。その金属錯体触媒(B)の例
としては、コバルト、亜鉛、鉄、銅、クロム、マンガ
ン、ニッケル、チタンなどの金属ナフテン酸塩、アセチ
ルアセトナート、又その誘導体の塩、各種カルボン酸塩
アルコキシドなどの有機酸塩等があり、単独でも混合し
て使用しても良い。その添加量は全シアネート樹脂10
0重量部に対し0.15重量部から0.9重量部であ
る。0.15重量部より少ないと反応促進効果が低く、
硬化時間が長くなり生産性が劣る。一方、0.9重量部
より多いと製品としての可使時間(ポットライフ)や保
管可使時間(シェルフライフ)が損なわれるためであ
る。Generally, a compound having at least two cyanate groups in one molecule is easily crosslinked by a trimerization reaction by heating in the presence of a metal complex to give a cured resin product having a high Tg. Examples of the metal complex catalyst (B) include metal naphthenates such as cobalt, zinc, iron, copper, chromium, manganese, nickel and titanium, acetylacetonates, salts of their derivatives, and various carboxylate alkoxides. There are organic acid salts, etc., which may be used alone or in combination. The amount of addition is 10 cyanate resins.
It is 0.15 to 0.9 parts by weight with respect to 0 parts by weight. If it is less than 0.15 parts by weight, the reaction promoting effect is low,
The curing time is long and the productivity is poor. On the other hand, if it is more than 0.9 parts by weight, the pot life and pot life of the product (shelf life) are impaired.
【0013】次に本発明で用いるアルコキシシラン系化
合物(C)はシアネート樹脂と相互作用又は反応をほと
んどしないものが適用される。これはシアネート基と相
互作用又は反応を伴う官能基が存在する場合(例えばグ
リシジル基、メルカプト基、アミノ基、イソシアネート
基、塩素、水酸基等)、液状樹脂の流動性が極端に低下
し、更には加熱しても流動性が向上しないためである。Next, as the alkoxysilane compound (C) used in the present invention, a compound which hardly interacts with or reacts with the cyanate resin is applied. This is because when there is a functional group that interacts with or reacts with a cyanate group (for example, glycidyl group, mercapto group, amino group, isocyanate group, chlorine, hydroxyl group, etc.), the fluidity of the liquid resin is extremely lowered, This is because the fluidity does not improve even when heated.
【0014】従って本発明で用いられるアルコキシシラ
ンの例としては、ビニルトリクロロシラン、ビニルトリ
メトキシシラン、ビニルトリエトキシシラン、ビニルト
リ-(β-メトキシエトキシ)シラン、β-(3,4エポキ
シシクロヘキシル)エチルトリメトキシシラン、γ-アク
リロキシプロピルメチルジメトキシシラン、γ-アクリ
ロキシプロピルトリメトキシシラン、γ-アクリロキシ
プロピルメチルジエトキシシラン、γ-アクリロキシプ
ロピルトリエトキシシラン、γ-メタクリロキシプロピ
ルメチルジメトキシシラン、γ-メタクリロキシプロピ
ルトリメトキシシラン、γ-メタクリロキシプロピルメ
チルジエトキシシラン、γ-メタクリロキシプロピルト
リエトキシシラン等が挙げられ、単独でも混合して使用
しても良い。Therefore, examples of the alkoxysilane used in the present invention include vinyltrichlorosilane, vinyltrimethoxysilane, vinyltriethoxysilane, vinyltri- (β-methoxyethoxy) silane and β- (3,4epoxycyclohexyl) ethyl. Trimethoxysilane, γ-acryloxypropylmethyldimethoxysilane, γ-acryloxypropyltrimethoxysilane, γ-acryloxypropylmethyldiethoxysilane, γ-acryloxypropyltriethoxysilane, γ-methacryloxypropylmethyldimethoxysilane, Examples thereof include γ-methacryloxypropyltrimethoxysilane, γ-methacryloxypropylmethyldiethoxysilane, and γ-methacryloxypropyltriethoxysilane, which may be used alone or in combination.
【0015】また、アルコキシシランの添加量は全シア
ネート樹脂100重量部に対し1重量部から15重量部
までである。1重量部より少ないと接着性が発現せず、
また15重量部より多いと過剰のアルコキシシランが増
加し、ブリード、ボイド、アウトガスなどの原因となり
好ましくない。The amount of alkoxysilane added is from 1 to 15 parts by weight per 100 parts by weight of the total cyanate resin. If it is less than 1 part by weight, adhesiveness will not be expressed,
On the other hand, if the amount is more than 15 parts by weight, excess alkoxysilane increases, causing bleeding, voids, outgassing, etc., which is not preferable.
【0016】本発明で用いる絶縁性無機フィラー(D)
の例としては、炭酸カルシウム、シリカ、アルミナ、窒
化アルミ等が挙げられるが、信頼性、熱放散性、コスト
の点でシリカ粒子が好ましく、低放射線性であればより
好ましい。形状は球状、破砕状、フレーク状等がある
が、フィラーの高充填化により線膨張係数の低減化が図
れる為、球状が好ましい。その添加量は、 封止樹脂と
しての特性(耐湿性、作業性等)を保つため全液状封止
樹脂組成物の60〜80重量%であることが必要であ
る。60重量%未満だと、上述の線膨張係数の低減効果
は小さく、80重量%を越えると結果として得られる組
成物の粘度が高くなり過ぎ、流動特性が悪化するため好
ましくない。添加に際しては上記の範囲で有れば単独で
用いても、混合して粒度分布に多峰性を持たせたもので
も差し支えない。Insulating inorganic filler (D) used in the present invention
Examples of include calcium carbonate, silica, alumina, aluminum nitride, and the like. Silica particles are preferable in terms of reliability, heat dissipation, and cost, and low radiation is more preferable. The shape may be spherical, crushed, flake-shaped, or the like, but spherical is preferable because the linear expansion coefficient can be reduced by increasing the filling amount of the filler. The amount of addition is required to be 60 to 80% by weight of the total liquid encapsulating resin composition in order to maintain the properties (moisture resistance, workability, etc.) as an encapsulating resin. If it is less than 60% by weight, the above-mentioned effect of reducing the coefficient of linear expansion is small, and if it exceeds 80% by weight, the viscosity of the resulting composition becomes too high and the flow characteristics deteriorate, which is not preferable. When added, they may be used alone if mixed within the above range, or may be mixed to have multimodal particle size distribution.
【0017】本発明の液状封止樹脂組成物には、前記の
必須成分の他に必要に応じてエポキシ樹脂、各種液状ゴ
ム等の添加剤を加えることもできる。更に エポキシ樹
脂との反応を促進するための触媒又は硬化剤、希釈剤、
顔料、カップリング剤、難燃剤、レベリング剤、消泡剤
等の添加物を用いても差し支えない。液状封止樹脂は、
例えば各成分、添加物等を三本ロール、二本熱ロール、
ブレード型混合機にて分散混練し、真空下脱泡処理して
製造する。In addition to the above essential components, the liquid encapsulating resin composition of the present invention may optionally contain additives such as epoxy resin and various liquid rubbers. Further, a catalyst or a curing agent for promoting the reaction with the epoxy resin, a diluent,
Additives such as pigments, coupling agents, flame retardants, leveling agents, defoamers and the like may be used. The liquid sealing resin is
For example, each component, additives, etc., three rolls, two heat rolls,
It is manufactured by dispersing and kneading with a blade type mixer and defoaming under vacuum.
【0018】[0018]
【実施例】本発明を実施例で具体的に説明する。
<実施例1〜2及び比較例1〜4>表1の処方に従って
秤量し、3本ロールにて混練・分散後、真空脱泡処理を
行い、液状封止樹脂を作製した。但し、比較例4は現行
のエポキシ樹脂系液状封止樹脂であり、フェノールノボ
ラック型エポキシ樹脂100重量部に芳香族ジアミン系
化合物を39重量部、γ-グリシドキシプロピルトリメ
トキシシランを10.8重量部加えた処方とした。EXAMPLES The present invention will be specifically described with reference to Examples. <Examples 1 and 2 and Comparative Examples 1 to 4> Weighed according to the formulation shown in Table 1, kneaded and dispersed with a three-roll mill, and then vacuum defoaming treatment was performed to produce a liquid encapsulating resin. However, Comparative Example 4 is a current epoxy resin-based liquid encapsulating resin, in which 100 parts by weight of a phenol novolac type epoxy resin is added with 39 parts by weight of an aromatic diamine compound and 10.8 parts of γ-glycidoxypropyltrimethoxysilane. The formulation was added with parts by weight.
【0019】次に樹脂の特性を把握するため以下の代用
特性を評価した。
(1)粘度測定:25℃において東機産業(株)製E型
粘度計で72時間静置後の粘度を測定し、その値を材料
の粘度とした。また同温度において、粘度計の0.5及
び2.5回転における比をもってチキソトロピーとし
た。
(2)接着強度:有機基板としてBTレジン製基板上に
ソルダーレジスト(太陽インキ社製PSRー4000/
CA−40)を形成した表面に液状封止樹脂を塗布しそ
の上に6x6x0.38mm角のシリコンチップを載置
し150℃、180分で硬化接着させ、240℃、20
秒におけるダイシェア強度をDAGE製BT100にて
測定した。また、同試験片を湿度85%温度85℃の吸
湿処理を最大72時間施し、同様にダイシェア強度を測
定し、吸湿処理後の密着性とした。Next, the following substitute characteristics were evaluated in order to grasp the characteristics of the resin. (1) Viscosity measurement: The viscosity after standing for 72 hours at 25 ° C was measured with an E-type viscometer manufactured by Toki Sangyo Co., Ltd., and the value was taken as the viscosity of the material. At the same temperature, the ratio at 0.5 and 2.5 revolutions of the viscometer was taken as the thixotropy. (2) Adhesive strength: Solder resist (PSR-4000 / Taiyo Ink Co., Ltd.) on a BT resin substrate as an organic substrate
A liquid sealing resin is applied to the surface on which CA-40) is formed, and a 6 × 6 × 0.38 mm square silicon chip is placed thereon and cured and adhered at 150 ° C. for 180 minutes.
The die shear strength in seconds was measured by BT100 manufactured by DAGE. Further, the same test piece was subjected to a moisture absorption treatment at a humidity of 85% and a temperature of 85 ° C. for a maximum of 72 hours, and similarly, the die shear strength was measured to obtain the adhesion after the moisture absorption treatment.
【0020】(3)流動性:有機基板として、14.5
x14.5x0.5mmのキャビティ(A)を有するガラス
エポキシ基板上に金メッキを施したものを用い、(A)
に液状樹脂を一定量((A)の中心に液滴として流動後
にフル充填出来る量)塗布した。それを(1)室温に5
分静置させた後、(2)80℃のホットプレート上に5
分静置させてから(3)150℃の硬化炉で180分静
置させ、(1)から(3)までの結果を合わせて液状樹
脂の濡れ拡がり性を観察し、流動性の評価をした。(3) Fluidity: 14.5 as an organic substrate
Using a glass epoxy substrate with a cavity (A) of x14.5x0.5mm plated with gold, (A)
Then, a certain amount of liquid resin was applied to the center of (A) so that it could be fully filled after flowing as droplets. Put it in (1) room temperature 5
After allowing to stand for 5 minutes, (2) 5 on a hot plate at 80 ° C.
After allowing to stand for (3) in a curing furnace at (3) 150 ° C. for 180 minutes, the results of (1) to (3) were combined and the wet spreadability of the liquid resin was observed to evaluate the fluidity. .
【0021】上記の測定結果を表1に示す。Table 1 shows the above measurement results.
【表1】 [Table 1]
【0022】以上表1に示したように、実施例では被着
体に対する接着力が飛躍的に増大しつつ、吸湿後の接着
力も既存の液状樹脂と同等のレベルを示した。また、実
施例1、2及び3はシアネートエステル系の液状樹脂で
あることから、非常に高いガラス転移温度を示した。更
に流動性に関し、実施例1ではある程度の流動性を発現
したが、実施例2ではアルコシキシラン系化合物の組み
合わせで非常に良好な流動性を示した。加えて、実施例
1及び実施例2はアルコキシシラン化合物を含むため、
吸湿後の密着性において大きな低下は見られず、72時
間後においても比較例4に示す実用化されているエポキ
シ樹脂系の液状封止樹脂以上の値を示した。As shown in Table 1 above, in the examples, the adhesive force to the adherend was remarkably increased, and the adhesive force after moisture absorption was at the same level as that of the existing liquid resin. In addition, since Examples 1, 2 and 3 are cyanate ester liquid resins, they exhibited a very high glass transition temperature. Regarding the fluidity, in Example 1, a certain degree of fluidity was exhibited, but in Example 2, a very good fluidity was exhibited by the combination of the alkoxyxylan compounds. In addition, since Example 1 and Example 2 contain an alkoxysilane compound,
No significant decrease in the adhesiveness after moisture absorption was observed, and even after 72 hours, the value was equal to or higher than the practically used epoxy resin-based liquid sealing resin shown in Comparative Example 4.
【0023】一方、実施例3ではフェノールノボラック
型のシアネートエステルを用いたため密着性及びガラス
転移温度は高いが、粘度及びチキソトロピーが高く、実
施例1及び2より流動性に劣ったが、アルコキシシラン
系化合物を用いていない比較例2と比べて密着性、流動
性とも向上した。比較例1ではアルコキシシラン系化合
物を用いていないため、Tgは高いが吸湿後の密着性の低
下が他と比べても大きく、吸湿後24時間後で既に劇的
に低下し、流動性が劣った。又、比較例3ではアルコキ
シシランとしてグリシジルエーテルユニットを有するも
のを用いたため、強度は高いが、粘度及びチキソトロピ
ーが高く流動性に劣り液状樹脂には適さない。比較例4
ではエポキシ樹脂系の液状樹脂だが密着性、Tgに関して
実施例1及び2に及ばない。On the other hand, in Example 3, since the phenol novolac type cyanate ester was used, the adhesion and the glass transition temperature were high, but the viscosity and thixotropy were high, and the flowability was inferior to that of Examples 1 and 2, but the alkoxysilane type was used. Both adhesion and fluidity were improved as compared to Comparative Example 2 in which no compound was used. In Comparative Example 1, since the alkoxysilane-based compound is not used, the Tg is high, but the decrease in adhesion after moisture absorption is larger than the others, and it is already dramatically reduced 24 hours after moisture absorption, resulting in poor fluidity. It was Further, in Comparative Example 3, since an alkoxysilane having a glycidyl ether unit was used, the strength was high, but the viscosity and thixotropy were high and the fluidity was poor, and it was not suitable for a liquid resin. Comparative Example 4
Then, although it is an epoxy resin liquid resin, it is inferior to those of Examples 1 and 2 in terms of adhesion and Tg.
【0024】[0024]
【発明の効果】本発明の液状モールド樹脂で封止する事
により、高密着性、高熱的特性、高流動性を有する高性
能の半導体封止が可能となり、工業的メリットは大き
い。Industrial Applicability By encapsulating with the liquid mold resin of the present invention, high-performance semiconductor encapsulation having high adhesion, high thermal properties and high fluidity can be achieved, which is a great industrial advantage.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI H01L 23/29 H01L 23/30 R 23/31 (58)調査した分野(Int.Cl.7,DB名) C08L 79/00 - 79/08 C08K 3/00 - 13/08 C08G 73/00 - 73/26 ─────────────────────────────────────────────────── ─── Continued Front Page (51) Int.Cl. 7 Identification Code FI H01L 23/29 H01L 23/30 R 23/31 (58) Fields investigated (Int.Cl. 7 , DB name) C08L 79/00 -79/08 C08K 3/00-13/08 C08G 73/00-73/26
Claims (7)
(3)で示される少なくとも2種以上の液状シアネート
エステル(A)100重量部に対して、金属錯体触媒
(B)0.15から0.9重量部、式(4)で示される
アルコキシシラン系化合物(C)1から15重量部、絶
縁性無機フィラーからなることを特徴とする液状封止樹
脂組成物。 【化1】 【化2】 1. Metal complex catalyst (B) 0.15 with respect to 100 parts by weight of at least two or more liquid cyanate esters (A) represented by formula (1) and formula (2) and / or formula (3). To 0.9 parts by weight, 1 to 15 parts by weight of the alkoxysilane compound (C) represented by the formula (4), and an insulating inorganic filler. [Chemical 1] [Chemical 2]
及びまたは式(3)に示すシアネートエステルが15重
量%から30重量%含まれる請求項1記載の液状封止樹
脂組成物。2. A liquid having the formula (2) in the liquid cyanate ester.
The liquid encapsulating resin composition according to claim 1, wherein the cyanate ester represented by the formula (3) is contained in an amount of 15% by weight to 30% by weight.
して60〜80重量%である請求項1記載の液状封止樹
脂組成物。3. The liquid encapsulating resin composition according to claim 1, wherein the insulating inorganic filler is 60 to 80% by weight based on the total liquid resin.
る請求項1記載の液状封止樹脂組成物。4. The liquid encapsulating resin composition according to claim 1, wherein the insulating inorganic filler has a spherical shape.
5μmから12μmで、かつ最大粒径が70μm 以下
である請求項1記載の液状封止樹脂組成物。5. The average particle diameter of the insulating inorganic filler is 0.
The liquid encapsulating resin composition according to claim 1, which has a maximum particle size of 5 μm to 12 μm and a maximum particle size of 70 μm or less.
状封止樹脂組成物で半導体を封止してなることを特徴と
する半導体装置。6. A semiconductor device obtained by encapsulating a semiconductor with the liquid encapsulating resin composition according to claim 1, 2, 3, 4 or 5.
請求項6記載の半導体装置。7. The semiconductor device according to claim 6, wherein the semiconductor is a ball grid array.
Priority Applications (1)
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---|---|---|---|
JP35852098A JP3456911B2 (en) | 1998-12-17 | 1998-12-17 | Liquid sealing resin composition and semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP35852098A JP3456911B2 (en) | 1998-12-17 | 1998-12-17 | Liquid sealing resin composition and semiconductor device |
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JP6179720B2 (en) * | 2013-11-01 | 2017-08-16 | 株式会社スリーボンド | Cyanate ester resin composition |
JP6443853B2 (en) * | 2014-08-28 | 2018-12-26 | ナミックス株式会社 | Encapsulant composition and semiconductor device using the same |
JP7151629B2 (en) * | 2019-06-06 | 2022-10-12 | 信越化学工業株式会社 | Thermosetting resin composition |
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