JPH11130936A - Epoxy resin composition and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a semiconductor sealing composition excellent in moldability, reliability and the suitability for mounting by mixing an epoxy resin with a phenolic resin curing agent, a cure accelerator, a fused silica powder and a specified amount of an alkoxy- and/or alkoxysilyl-containing organopolysiloxane. SOLUTION: This composition is compounded with a phenolic resin curing agent of formula I and 0.05-2 wt.%, based on the composition, alkoxyl and/or alkoxysilyl-containing organopolysiloxane of formula II. In formula I, R is a halogen or a 1-12C alkyl; l is 1-10; m is 0-3; and n is 0-4. In formula II, R1 is a 1-12C alkyl, an aryl or an aralkyl; A is OR3 , R2 Si(R3 )p (OR3 )3-p (wherein R2 is a 1-9C alkylene; R3 is a 1-9C alkyl; and p is 0-2); B is an organic group composed of atoms selected among C, N, O, S and H; R4 is A, B or R1 , l+m+n>=5; 1>=0; n>=0; and m/(l+m+n)=0.05-0.8.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epoxy resin composition for semiconductor encapsulation and a resin-encapsulated semiconductor device having excellent moldability, reliability, and mountability, and more particularly to a printed wiring board and a metal lead frame. The semiconductor element is mounted on one side of
In a so-called area mounting type semiconductor device in which substantially only one of its mounting surfaces is resin-sealed, the warpage after resin sealing and the warping in the soldering process at the time of board mounting are small, and in a temperature cycle test. Excellent package crack resistance and package crack resistance and peeling resistance in the soldering process,
The present invention relates to an epoxy resin composition for semiconductor encapsulation excellent in moldability and a semiconductor device in which a semiconductor element is encapsulated by the composition.

[0002]

2. Description of the Related Art In recent years, in the market trend of miniaturization, weight reduction, and high performance of electronic equipment, high integration of semiconductors has been progressing year by year, and surface mounting of semiconductor packages has been promoted. Packaging packages have been developed and are beginning to move away from packages with traditional structures. Typical area mounting packages are BGA (ball grid array) or CSP (chip size package) pursuing further miniaturization, but these are approaching the limit in conventional surface mounting packages such as QFP and SOP. It has been developed to meet the demand for higher pin counts and higher speeds. The structure is as follows: a rigid circuit board represented by a BT resin / copper foil circuit board (bismaleimide / triazine / glass cloth board) or a flexible circuit board represented by a polyimide resin film / copper foil circuit board; An element is mounted, and only the element mounting surface, that is, one side of the substrate is molded and sealed with an epoxy resin composition or the like. In addition, a solder ball is formed two-dimensionally in parallel on the surface opposite to the element mounting surface of the substrate, and has a feature of joining with a circuit board on which a package is mounted. Furthermore,
As a substrate on which the element is mounted, a structure using a metal substrate such as a lead frame has been devised in addition to the organic circuit substrate.

[0003] The structure of these area mounting type semiconductor packages adopts a single-sided sealing form in which only the element mounting surface of the substrate is sealed with a resin composition and the solder ball forming surface is not sealed. Very rarely, on a metal substrate such as a lead frame, a sealing resin layer of about several tens of μm may exist even on the solder ball forming surface, but a sealing resin layer of several hundred μm to several mm on the element mounting surface. Since the layer is formed, one-sided sealing is substantially achieved. For this reason, due to the mismatch of thermal expansion and thermal contraction between the organic substrate or metal substrate and the cured product of the resin composition, or the effect of curing shrinkage during molding and curing of the resin composition, these packages cannot be molded. Warpage tends to occur immediately after. In addition, when soldering is performed on a circuit board on which these packages are mounted, a heating step of 200 ° C. or more is performed. At this time, package warpage occurs.
A large number of solder balls are not flattened and rise from the circuit board on which the package is mounted, which causes a problem that electrical connection reliability is reduced. In a package in which substantially only one surface on a substrate is sealed with a resin composition, in order to reduce warpage, the linear expansion coefficient of the substrate and the linear expansion coefficient of the cured resin composition are brought close to each other, and the Two ways to reduce cure shrinkage are important. As the substrate, in the case of an organic substrate, a resin having a high glass transition temperature such as a BT resin or a polyimide resin is widely used, and these have a glass transition temperature higher than around 170 ° C. which is a molding temperature of the epoxy resin composition. Accordingly, in the cooling process from the molding temperature to room contracts only alpha ₁ region of the organic substrate. Therefore, the resin composition is also the same as high and alpha ₁ is a circuit board glass transition temperature, warpage is considered to be substantially zero when further curing shrinkage is zero. Therefore, the glass transition temperature higher by a combination of a polyfunctional epoxy resin and a polyfunctional phenol resin, methods to adjust the alpha ₁ in the amount of the inorganic filler has been proposed.

Further, when soldering is performed by soldering by means such as infrared reflow, vapor phase soldering, or solder immersion, moisture present inside the package due to moisture absorption from the cured product of the resin composition and the organic substrate is high. Cracks in the package due to stress caused by rapid vaporization in the package, and peeling at the interface between the device mounting surface of the substrate and the cured product of the resin composition, resulting in a low stress and low moisture absorption of the cured product. With the development, the adhesion to the substrate is also required. Furthermore, due to the mismatch between the thermal expansion coefficient of the substrate and the cured product, peeling of the substrate / cured product interface and package cracking occur even in a temperature cycle test, which is a typical example of a reliability test. Conventional surface mount packages such as QFP and SOP use a crystalline epoxy resin typified by a biphenyl-type epoxy resin and a flexible skeleton to prevent cracks at the time of solder mounting and peeling at each material interface. By using a phenolic resin curing agent in combination and increasing the blending amount of an inorganic filler, measures have been taken to lower the glass transition temperature and lower the moisture absorption. However, at present, this method cannot solve the problem of warpage in a single-sided sealed package.

[0005]

DISCLOSURE OF THE INVENTION The present invention has low warpage after molding in an area mounting package or during soldering, and has particularly excellent adhesion to a substrate, so that reliability in a temperature cycle test, soldering, etc. The present invention has been made for the purpose of developing an epoxy resin composition for semiconductor encapsulation which is excellent in performance and a semiconductor device in which a semiconductor element is encapsulated thereby.

[0006]

The present invention provides (A) an epoxy resin, (B) a phenolic resin curing agent represented by the general formula (1), (C) a curing accelerator, (D) a fused silica powder, (E) 0.05 to 2% by weight in the total epoxy resin composition
An epoxy resin composition for encapsulating a semiconductor, comprising an organopolysiloxane containing an alkoxy group and / or an alkoxysilyl group represented by the general formula (2), and a semiconductor device in which a semiconductor element is encapsulated thereby. It is. And preferably, (A) the polyfunctional epoxy resin represented by the general formulas (3) and (4) and / or the formulas (5) to (5)
(9) at least one epoxy resin selected from the group of crystalline epoxy resins having a melting point of 50 to 150 ° C., (B) a phenolic resin curing agent represented by the general formula (1), (C) 0.05 to 2% by weight in the curing accelerator, (D) fused silica powder, and (E) the total epoxy resin composition
An epoxy resin composition for encapsulating a semiconductor, comprising an organopolysiloxane containing an alkoxy group and / or an alkoxysilyl group represented by the general formula (2), and a semiconductor device in which a semiconductor element is encapsulated thereby. It is about.

[0007]

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[0008]

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[0009]

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[0010]

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In the formula (1), R represents a halogen atom or an alkyl group having 1 to 12 carbon atoms.
It may be different. l is a positive integer from 1 to 10, m is 0
Or a positive integer of 1 to 3 and n is 0 or 1 to 4
Is a positive integer. R ₁ in the formula (2) has 1 to 12 carbon atoms.
Organic group selected from an alkyl group, an aryl group, and an aralkyl group, which may be the same or different from each other. A is OR ₃ (alkoxy group) or R ₂ Si (R ₃ ) _p
(OR ₃ ) _3-p (alkoxysilyl group), R ₂ represents an alkylene group having 1 to 9 carbon atoms, and R ₃ represents an alkyl group having 1 to 9 carbon atoms. ,
It may be different. p shows the integer of 0-2. B
Represents a monovalent organic group composed of atoms selected from carbon, nitrogen, oxygen, sulfur and hydrogen atoms. R ₄ is A, B
Or R ₁ . Further, l, m, and n have the following relationship. l + m + n ≧ 5, l ≧ 0, n ≧ 0, m / (l + m + n)
= 0.05 to 0.8 R in the formulas (3), (4) and (9) represents a halogen atom or an alkyl group having 1 to 12 carbon atoms, and may be the same or different from each other. . l is a positive number of 1 to 10 or less, m is 0 or a positive integer of 1 to 3, and n is 0 or a positive integer of 1 to 4. R in formulas (5) to (8)
Represents a hydrogen atom, a halogen atom or an alkyl group having 1 to 12 carbon atoms, which may be the same or different.

[0012]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail.
The epoxy resin (A) used in the present invention refers to all monomers, oligomers, and polymers having an epoxy group, such as a triphenolmethane-type epoxy resin,
Biphenyl epoxy resin, stilbene epoxy resin, hydroquinone epoxy resin, bisphenol F
Type epoxy resin, bisphenol A type epoxy resin, orthocresol novolak type epoxy resin, naphthol type epoxy resin and the like. These epoxy resins may be used alone or as a mixture.
Among these epoxy resins, a resin generally referred to as a triphenolmethane epoxy resin represented by the formula (3) or an epoxy resin represented by the formula (4) is obtained by combining with a phenol resin curing agent of the formula (1). Since the crosslinked density of the cured product is high, the glass transition temperature is high, and the curing shrinkage is small, it is effective in reducing warpage in encapsulation of an area-mounted semiconductor package, which is an application of the epoxy resin composition. . Specific examples of the formulas (3) and (4) include the following, but are not limited thereto.

[0013]

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[0014]

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The crystalline epoxy resin represented by the formulas (5) to (9) and having a melting point of 50 to 150 ° C. is a diepoxy compound having two epoxy groups in one molecule or an oligomer thereof. Since all of these epoxy resins show crystallinity, they are solid at a temperature lower than the melting point, but become a low-viscosity liquid material at a temperature higher than the melting point. For this reason, the epoxy resin composition using these has a low viscosity in a molten state, so that the fluidity of the resin composition at the time of molding is high, and the filling property into a thin package is excellent. Therefore, it is preferable to use these crystalline epoxy resins when increasing the amount of the fused silica powder to reduce the moisture absorption of the obtained cured epoxy resin composition and improving the solder reflow resistance. These crystalline epoxy resins have as few as two epoxy groups in one molecule, and generally have only a low crosslink density and a cured product with low heat resistance. However, since it has a rigid plane or rod-like skeleton as a structure and has the property of being crystallized, that is, the feature that molecules are easily oriented, the polyfunctional phenol resin curing agent represented by the general formula (1) is used. When used in combination, it is difficult to lower the heat resistance such as the glass transition temperature after curing. For this reason, the semiconductor package sealed with the epoxy resin composition by the combination of the crystalline epoxy resin and the phenol resin curing agent represented by the general formula (1) can reduce the amount of warpage. Further, in a temperature region once exceeding the glass transition temperature, the compound exhibits a low elasticity characteristic which is a characteristic of the compound having a low functional group, and thus is effective in reducing the stress at the solder processing temperature. This has the effect of preventing the occurrence of package cracks during the soldering process and the occurrence of separation at the interface between the substrate and the resin composition. If the crystalline epoxy resin has a melting point of less than 50 ° C., it tends to fuse in the production process of the epoxy resin composition, and the workability is significantly reduced. In addition, a crystalline epoxy resin having a melting point exceeding 150 ° C. has a problem that the uniformity of the material is poor because the epoxy resin composition is not sufficiently melted in a manufacturing process of kneading under heating. The melting point is measured by a differential scanning calorimeter [Seiko Electronics SSC520, heating rate 5 ° C.
/ Min] from the endothermic peak temperature. Specific examples of these crystalline epoxy resins are shown below, but the invention is not limited thereto.

[0016]

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[0017]

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[0018]

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[0019]

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In addition, from the viewpoint of reducing package warpage, increasing fluidity during molding, and achieving solder resistance during mounting, the polyfunctional epoxy resins represented by the above general formulas (3) and (4) are all used. 20 to 80% by weight in the epoxy resin, further represented by the formulas (5) to (9), and having a melting point of 50 to 150 ° C.
20% by weight of crystalline epoxy resin in total epoxy resin
It is particularly preferable to include the above.

The phenolic resin curing agent represented by the formula (1) of the component B used in the present invention is a so-called triphenolmethane-type phenolic resin, and specific examples are shown below, but are not limited thereto. .

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When these phenolic resins are used, the crosslink density of the cured product is increased, and a cured product having a high glass transition temperature can be obtained. For this reason, the warpage of the package sealed with the obtained epoxy resin composition can be reduced. Equation (1)
The phenol resin can be used in combination with other phenol resins, and is not particularly limited. Examples thereof include a phenol novolak resin, a cresol novolak resin, and a naphthol novolak resin.

The curing accelerator of the component (C) used in the present invention refers to those which can be a catalyst for a crosslinking reaction between the epoxy resin and the phenol resin curing agent, and specifically includes amine compounds such as tributylamine. And organic phosphorus compounds such as triphenylphosphine and tetraphenylphosphonium / tetraphenylborate, and imidazole compounds such as 2-methylimidazole, but are not limited thereto. These curing accelerators may be used alone or as a mixture.

The fused silica powder of the component (D) used in the present invention can be used in any of a crushed form and a spherical form. However, the amount of the fused silica powder is increased, and the melt viscosity of the resin composition is increased. In order to suppress this, it is preferable to mainly use spherical silica. In order to further increase the content of the spherical silica, it is desirable to adjust the particle size distribution of the spherical silica to be wider.

The organopolysiloxane of the component (E) used in the present invention can be represented by the general formula (2), and it is essential that the molecule has an alkoxy group and / or an alkoxysilyl group in the molecule. Generally, by blending an organopolysiloxane with an epoxy resin composition, uniform flowability during molding of the epoxy resin composition is improved, preventing unfilling in a mold and a gold wire attached to an element. This has the effect of reducing the amount of deformation of. On the other hand, the introduction of an alkoxy group or an alkoxysilyl group into the organopolysiloxane has the following effects.

In a semiconductor package for area mounting, which is an application of the epoxy resin composition of the present invention, the epoxy resin composition is molded and sealed on substantially only one surface (device mounting surface) of the substrate. Various interfaces exist between the mounting surface and the epoxy resin composition. When the board is a circuit board, a gold-plated surface exists on the copper foil circuit and a part of the circuit, and if the adhesive force at the interface with the metal is low, peeling occurs after moisture-absorbing solder, which significantly reduces electrical reliability. However, since organopolysiloxane generally lowers the adhesive strength to these metals, even if the amount of addition to the epoxy resin composition is reduced, the reliability of the sealed package is impaired. However, when an alkoxy group or an alkoxysilyl group is introduced into the organopolysiloxane, the adhesiveness to these metals is improved, so that both the uniform fluidity of the epoxy resin composition and the adhesiveness to the metal can be achieved.

Furthermore, a solder resist layer is generally formed on a copper foil circuit on a substrate for securing insulation and protecting the circuit. For this reason, it is important for the epoxy resin composition to have an adhesive force not only with metals such as copper and gold but also with the solder resist interface. However, the solder resist contains a silicone-based additive for imparting its surface smoothness and defoaming effect, which bleeds out to the surface of the solder resist layer. Adhesion at the interface is significantly reduced. The lowering of the adhesive force causes the peeling of the interface between the cured product of the epoxy resin composition and the substrate in the soldering process after the package absorbs moisture,
The reliability is greatly reduced. On the other hand, by adding an organopolysiloxane containing an alkoxy group or an alkoxysilyl group, the affinity between the solder resist surface and the epoxy resin composition is improved, so that the adhesive force at the interface is improved, and the reliability of the package is improved. Is improved.

If the alkoxy group or the alkoxysilyl group is subjected to a hydrolysis treatment before being compounded with the epoxy resin composition to be converted into a silanol group, the adhesion to a metal is particularly improved. Hydrolysis proceeds only by dissolving the organopolysiloxane in an alcohol / water mixture and stirring at room temperature for several to several tens of hours. The number of alkoxy groups or alkoxysilyl groups (m) is 0.05 to 0.05 with respect to the degree of polymerization (l + m + n) of the organopolysiloxane.
It is preferably in the range of 0.8. If it is less than 0.05, the effect of improving the adhesive strength to metal or solder resist cannot be obtained. If it exceeds 0.8, a reaction between alkoxy groups or alkoxysilyl groups occurs, and the viscosity of the organopolysiloxane increases with time. As a result, the fluidity of the epoxy resin composition during molding is reduced, and the moisture absorption of the epoxy resin composition is increased, and the solder resistance is reduced.

In the organopolysiloxane molecule, besides the alkoxy group and / or the alkoxysilyl group, carbon,
It may have various functional groups consisting of oxygen, nitrogen, sulfur and hydrogen atoms. Examples of these functional groups include groups having reactivity with an epoxy resin or a phenol resin curing agent such as an epoxy group, a hydroxyl group, an amino group, a ureide group, a mercapto group, and a polyether group, or a group that improves compatibility. . Among them, polyether groups are particularly effective for improving the adhesion to the solder resist. The amount of organopolysiloxane added is preferably in the range of 0.05 to 2% by weight of the total epoxy resin composition.
If it is less than 0.05% by weight, the fluidity during molding of the epoxy resin composition is reduced, the amount of deformation of the gold wire is large, and the effect of improving the adhesive strength with the solder resist cannot be obtained. On the other hand, if the content exceeds 2% by weight, the moldability is deteriorated, such as contamination of the surface of a molded product or a mold during molding.

The resin composition of the present invention is represented by a brominated epoxy resin, a flame retardant such as antimony trioxide, a coupling agent, and carbon black, if necessary, in addition to the essential components (A) to (E). Coloring agents, release agents such as natural waxes and synthetic waxes, etc., can be appropriately compounded. In order to obtain a resin composition, the components are mixed, heated and kneaded with a heating kneader or a hot roll, and then cooled and pulverized to obtain a desired resin composition. The semiconductor device of the present invention
It is obtained by encapsulating a semiconductor element by transfer molding, compression molding, injection molding or the like using the above-described epoxy resin composition for semiconductor encapsulation.

[0031]

The present invention will be specifically described below with reference to examples. << Example 1 >> An epoxy resin having a structure represented by the formula (10) as a main component: [manufactured by Yuka Shell Epoxy Co., Ltd., trade name Epicoat 1032H, softening point 60]
Epoxy equivalent 170 ° C.] 6.1 parts by weight Biphenyl epoxy resin having a structure represented by formula (11) as a main component: [YX-4000H, manufactured by Yuka Shell Epoxy Co., Ltd., melting point 105 ° C., epo Xy equivalent 195] 3.0 parts by weight Phenol resin represented by formula (12): [Mehka Kasei Co., Ltd., trade name MEH-7500, softening point 107 ° C, hydroxyl equivalent 97] 4.9 parts by weight Organopolysiloxane represented by the formula (13): 0.5 parts by weight Triphenylphosphine: 0.2 parts by weight Spherical fused silica: 84.5 parts by weight Carnauba wax: 0.5 parts by weight Carbon black: 0 0.3 parts by weight After the above components were mixed by a mixer, the mixture was kneaded 30 times using two rolls having a surface temperature of 90 ° C. and 45 ° C., and the obtained kneaded material sheet was cooled and pulverized to obtain a resin. The composition was used. The properties of the obtained resin composition were evaluated by the following methods. Table 1 shows the evaluation results.

[0032]

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[0033]

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<< Examples 2 to 8 and Comparative Examples 1 and 2 >> Based on Example 1, the types of the epoxy resins of the formulas (10) and (11) and the phenolic resin of the formula (12) and the amounts thereof were used. The other components were blended in the same proportions as in the basic blending, and mixed and kneaded in the same manner as in Example 1 to obtain a resin composition. Evaluation was performed in the same manner as in Example 1. The formulations and evaluation results are shown in Tables 1 and 3.

<< Examples 9 to 13 and Comparative Examples 3 to 4 >> With reference to Example 1, the components were blended in the same proportions as in the basic blend except that the type of organopolysiloxane was changed. Was mixed and kneaded in the same manner as in the above to obtain a resin composition. Evaluation was performed in the same manner as in Example 1. Tables 2 and 3 show the formulation and evaluation results.

<< Examples 14 to 15 and Comparative Examples 5 to 6 >> Based on Example 1, the compounding amount of the organopolysiloxane of the formula (13) was changed and the compounding ratio of the other components was changed accordingly. Then, the mixture was mixed and kneaded in the same manner as in Example 1 to obtain a resin composition. Evaluation was performed in the same manner as in Example 1.
Tables 2 and 3 show the formulation and evaluation results.

The formula (1) used in the above Examples and Comparative Examples
4) epoxy resins of formulas (19) and (20)
The structures and properties of the phenolic resin and the organopolysiloxanes of the formulas (21) to (27) are shown below.

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[0038]

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[0039]

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[0040]

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[0041]

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[0042]

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Epoxy resin having a structure represented by formula (14) as a main component: melting point 144 ° C., epoxy equivalent 175 ・ Epoxy resin having a structure represented by formula (15) as a main component: melting point 103 ° C., epoxy equivalent 225 ・ Epoxy resin having a structure represented by formula (16) as a main component: melting point 133 ° C., epoxy equivalent 182 ・ Epoxy resin having a structure represented by formula (17) as a main component: melting point 82 ° C., epoxy equivalent 190 ・Epoxy resin having a structure represented by the formula (18) as a main component: softening point of 65 ° C., epoxy equivalent of 210 ・ Phenolic resin of the formula (19): softening point of 80 ° C., hydroxyl equivalent of 104 ・ Phenolic resin of the formula (20): Softening point 72 ° C, hydroxyl equivalent 171

<< Evaluation Method >> Spiral flow: Using a mold for measuring spiral flow according to EMMI-1-66, using a mold temperature of 175 ° C.
The measurement was performed at an injection pressure of 70 kg / cm ² and a curing time of 2 minutes. -Glass transition temperature (Tg) and coefficient of linear expansion (α ₁ ): 1
The test piece obtained by transfer molding at 75 ° C. for 2 minutes was further cured at 175 ° C. for 8 hours, and measured by a thermomechanical analyzer [TMA-120 manufactured by Seiko Denshi Co., Ltd., heating rate 5 ° C./min].・ Heat elastic modulus: Flexural elastic modulus at 240 ° C is JIS-K6
It was measured under the test conditions of 911. Curing shrinkage: 180 ° C mold temperature of test piece, 7
Transfer molding was performed at an injection pressure of 5 kg / cm ² for 2 minutes, and post-curing was further performed at 175 ° C. for 8 hours. The cavity dimensions of the mold heated to 180 ° C. and the dimensions of the molded article heated to 180 ° C. were measured with calipers, and the curing shrinkage was represented by the ratio of molded article dimension / mold cavity dimension.

Package warpage: 225-pin BGA package (substrate: 0.36 mm thick BT resin substrate, package size: 24 × 24 mm, thickness: 1.17 mm, silicon chip: size 9 × 9 mm, thickness: 0.35 mm, chip The bonding pad of the circuit board is bonded with a gold wire having a diameter of 25 μm) at a mold temperature of 180 ° C.
Transfer molding was performed at an injection pressure of 75 kg / cm ² for 2 minutes, and post-curing was further performed at 175 ° C. for 8 hours. After cooling to room temperature, the displacement in the height direction was measured diagonally from the gate of the package using a surface roughness meter, and the value with the largest variation difference was defined as the amount of warpage. Solder Resistance: The molded product package used for measuring the package warpage was left for 168 hours in an environment of 85 ° C. and 60% relative humidity, and then immersed in a 240 ° C. solder bath for 10 seconds.
The package was observed using an ultrasonic flaw detector, and the number of internal cracks and the number of peels at the interface between the substrate and the resin composition were represented by% of (number of generated packages) / (total number of packages). Gold wire deformation: 225 molded by evaluating package warpage
The pin BGA package was observed with a soft X-ray fluoroscope, and the deformation rate of the gold wire was represented by (flow amount) / (gold wire length) in%.

[0046]

[Table 1]

[0047]

[Table 2]

[0048]

[Table 3]

[0049]

The epoxy resin composition for encapsulating a semiconductor according to the present invention has a small warpage in an area mounting type semiconductor device using the same at room temperature and in a soldering process. Because of its excellent adhesion to the solder, it has excellent reliability such as solder resistance and temperature cycle resistance.

Continued on the front page (51) Int.Cl. ⁶ Identification code FI C08G 59/62 C08G 59/62 C08K 3/36 C08K 3/36 C08L 83/06 C08L 83/06 H01L 23/29 H01L 23/30 R 23 / 31

Claims (3)

[Claims] 1. An epoxy resin, (A) an epoxy resin, (B) a phenolic resin curing agent represented by the general formula (1), (C) a curing accelerator, (D) a fused silica powder, and (E) a total epoxy resin composition. 0.05 to 2% by weight in general formula (2)
An epoxy resin composition for encapsulating a semiconductor, comprising an organopolysiloxane containing an alkoxy group and / or an alkoxysilyl group represented by the formula: Embedded image R in the formula (1) represents a halogen atom or an alkyl group having 1 to 12 carbon atoms, and may be the same or different. l is a positive integer of 1 to 10, m is 0 or 1
A positive integer of 3 and n is 0 or a positive integer of 1 to 4. R ₁ in the formula (2) represents an organic group selected from an alkyl group having 1 to 12 carbon atoms, an aryl group, and an aralkyl group, and may be the same or different. A
Is OR ₃ [alkoxy group] or R ₂ Si (R ₃ ) _p (OR ₃ ) _3-p
R ₂ represents an alkylene group having 1 to 9 carbon atoms, and R ₃ represents an alkyl group having 1 to 9 carbon atoms, which may be the same as or different from each other. p shows the integer of 0-2. B represents a monovalent organic group composed of atoms selected from carbon, nitrogen, oxygen, sulfur and hydrogen atoms. R ₄ represents A, B or R ₁ . Further, l, m, and n have the following relationship. l + m + n ≧ 5, l ≧ 0, n ≧ 0, m / (l + m + n)
= 0.05-0.8 2. The epoxy resin according to any one of the general formulas (3) and (4)
And / or a polyfunctional epoxy resin represented by the formula (5):
The epoxy resin composition for semiconductor encapsulation according to claim 1, which is at least one epoxy resin selected from the group of crystalline epoxy resins represented by (9) and having a melting point of 50 to 150 ° C. Embedded image Embedded image Embedded image R in the formulas (3), (4) and (9) represents a halogen atom or an alkyl group having 1 to 12 carbon atoms, and may be the same or different. l is a positive number from 1 to 10, m
Is 0 or a positive integer of 1 to 3, and n is 0 or 1.
Is a positive integer of ４4. R in the formulas (5) to (8) represents a hydrogen atom, a halogen atom or an alkyl group having 1 to 12 carbon atoms, and may be the same or different. 3. A semiconductor device, wherein a semiconductor element is sealed with the epoxy resin composition for semiconductor sealing according to claim 1.