JP3444812B2 - Semiconductor light emitting device - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device such as a light emitting diode or a semiconductor laser using a wide gap semiconductor.

[0002]

2. Description of the Related Art It has been studied to manufacture a semiconductor light emitting device using a semiconductor material capable of emitting light in a blue to green region. InGaAlN-based compound semiconductors have a wide bandgap and a direct transition band structure, and thus are expected to be applied to blue and green light emitting devices.

GaN is a direct transition type semiconductor, and its energy gap is about 3.39 eV. By using this, a semiconductor light emitting device for ultraviolet light of about 366 nm can be manufactured. By doping this GaN with a group II atom, it is possible to form an emission center with an energy gap corresponding to the blue region, whereby a blue light emitting diode can be manufactured.

InG formed by adding In to GaN
aN is a direct transition type semiconductor and is capable of emitting blue / green light emission. By using this InGaN,
It is expected to obtain highly efficient light emitting diodes and visible semiconductor lasers.

Further, in the above GaN or InGaN, Ga contained in the crystal is partially or entirely Al.
By substituting with, the energy gap of the crystal can be increased and the refractive index of the crystal can be lowered without substantially changing the lattice constant of the crystal. As described above, a crystal in which Ga is replaced by Al and G
By forming a heterojunction using aN or InGaN, it is possible to realize a light emitting diode and a semiconductor laser with higher efficiency.

By the way, as a method for growing a GaN layer on a substrate, MOVPE (organic metal compound vapor phase epitaxy) and gas source MBE (molecular beam epitaxy) are used. However, for example, when GaN is doped with a dopant such as Mg that serves as an acceptor, GaN has a high resistance, and low-resistance GaN exhibiting p-type conductivity.
No layers could be obtained. Therefore, since it was not possible to form a pn junction when manufacturing a light emitting device using GaN, it is necessary to adopt a MIS (metal-insulator-semiconductor) structure having poor quantum efficiency and high driving voltage. There wasn't.

Recently, by H. Amano et al., Japanese Journ
In al of Applied Physics Vol.28L2112 (1989), a semiconductor light emitting device as shown in FIG. 6 was proposed.
This semiconductor light emitting device is constructed by forming AlN on a sapphire substrate 61.
Buffer layer 62, undoped n-type GaN layer 63 and G
The aN layer 64 is laminated. The GaN layer 64 is doped with Mg, and an electron beam 66 is applied to a region 65 in the central portion of the GaN layer 64 shown by hatching in the figure.
Is being irradiated. It is reported that the irradiation of the electron beam 66 causes a change in the electrical characteristics of the irradiated portion 65, and the irradiated portion 65 becomes a p-type semiconductor layer having a specific resistance of several tens Ω · cm. It was

This change in the electrical property is caused by the fact that the inactive Mg atoms in the interstitial position in the crystal are excited by electron beam irradiation and are replaced with the Ga atoms in the crystal lattice, and enter the lattice position of the Ga atom. It is presumed that it occurred because it was activated as an acceptor.

[0009]

However, since the electron beam has a high accelerating voltage, it has a drawback that irradiation with the electron beam affects other atoms in the crystal and causes lattice defects. When the layer thickness of the p-type layer to be formed is large, an electron beam with a higher accelerating voltage is required, so that the above-mentioned lattice defects increase. As a result, the luminous efficiency is reduced. Particularly in the case of a semiconductor laser, if a defect occurs in the optical waveguide region, the reliability is lowered, so that the problem of the lattice defect is large.

Further, in the above semiconductor light emitting device,
Since the layer which has been grown and which is already doped with the acceptor is irradiated with an electron beam to form a p-type layer having a low resistance, the number of manufacturing steps increases. Moreover, it is difficult to control the thickness of the p-type layer. In particular, increasing the thickness of the p-type layer is limited because there is a limit to the layer thickness that the electron beam can reach. Also, it is difficult to control the carrier concentration in the p-type layer.

The present invention is intended to solve the above-mentioned drawbacks, has no lattice defect in the p-type layer, can emit light with high efficiency, has high reliability, and controls the carrier concentration and the layer thickness of the p-type layer. It is an object of the present invention to provide a semiconductor light emitting device that is easy to manufacture.

[0012]

The semiconductor light-emitting device of the present invention, in order to solve the problems] includes an n-type cladding layer, an active layer, a p-type clad layer,
A p-type electrode formed on the p-type cladding layer, the
A semiconductor light emitting device, which is a semiconductor laser provided in sequence , wherein the n-type cladding layer is In _1-w (Ga _z Al _1-z ) _w
N (0 <z ≦ 1, 0 ≦ w ≦ 1), and the active layer
_{Is, In 1-s (Ga t} Al 1-t) s N (0 <s ≦ 1,0 ≦ t
≦ 1, z <t have y <t), the p-type cladding layer has a M g as an acceptor carrier concentration is controlled
P-type In containing no lattice defects due to electron beam irradiation
_{1-x (Ga y Al 1} -y) x N (0 <x ≦ 1,0 ≦ y ≦ 1) or
Rannahli, between the p-type cladding layer and the p-type electrode, has a M g as an acceptor carrier concentration is controlled
In addition, p-type In _1-u containing no lattice defects due to electron beam irradiation
_{(Ga v Al 1-v)} u N layer having a (0 <u ≦ 1,0 ≦ v ≦ 1), wherein the p-type cladding layer and the p-type In _1-u (Ga _v
A striped ridge portion is formed in the Al _1-v ) _u N layer ,
Further, GaA is formed on both sides of the striped ridge portion.
The s layer is formed .

[0013]

The impurity of the n-type cladding layer is Si .

The carrier concentration of the p-type cladding layer is controlled to 5 × 10 ¹⁷ cm ^-3 . Furthermore, an n-type substrate is provided under the n-type clad layer,
The n-type electrode is provided, characterized in Rukoto the n-type substrate.

In the present invention, I is formed on the growth surface on the substrate.
_{n 1-x (Ga y Al} 1-y) nitrogen atom contained _x N and III
In supplying the family atoms alternately _{1-x (Ga y Al 1} -y) x N
Grow layers. At that time, the acceptor is supplied simultaneously with either the nitrogen atom or the group III atom. Therefore, the migration of the dopant is increased, so that the dopant can surely enter the lattice position that can be the acceptor. At the same time as growth, the above In _1-x (Ga _y Al
Since _{1-y) x} N layer is a p-type _{In 1-x (Ga y Al} 1-y) x N layer, it is easy to control the thickness and carrier concentration. When the growth surface is irradiated with light, the energy can further increase the migration.

[0017]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will now be described with reference to the drawings.
I will explain. (Embodiment 1) FIG. 1 shows a semiconductor light emitting device according to Embodiment 1 of the present invention.
FIG. This semiconductor element is sapphire
On the (0001) plane of the substrate 1, the AlN buffer layers 2, n
Type In_1-w(Ga_zAl_1-z)_wN layer 3 (w is greater than 0 and 1
Hereinafter, z is 0 or more and 1 or less), p-type In_1-x(Ga_y
Al_1-y)_xN layer 4 (x is greater than 0 and less than or equal to 1, y is greater than or equal to 0)
1 or less) is laminated. The p-type In_1-x
(Ga_yAl _1-y)_xN layer 4 and n-type In_1-w(Ga_zA
l_1-z)_wThe N layer 3 is an n-type In_1-w(Ga_zAl_1-z)_wN layer
3 has been partially removed to expose and exposed
N-type In_1-w(Ga_zAl_1-z)_wN-type on the N layer 3
Al electrode 5 is provided and the remaining p-type In_1-x(Ga_yA
l_1-y)_xA p-type Al electrode 6 is provided on the N layer 4.
It

This semiconductor light emitting device is manufactured as follows. As a method of growing each of the above semiconductor layers, MO
The VPE method or the gas source MBE method is preferable. The following compounds can be used as the source of the atoms and the raw material of the dopant that form each of the semiconductor layers.

Ga source: trimethylgallium (TM
G) or triethylgallium (TEG), etc., Al source: trimethylaluminum (TMA) or triethylaluminum (TEA), etc., In source: trimethylindium (TMI) or triethylindium (T).
EI), N source: ammonia (NH ₃ ), dopant gas: silane (SiH ₄ ) (for n-type dopant) and biscyclopentadienyl magnesium (Cp ₂ M)
g) (for p-type dopant) and the like.

First, the wafer-shaped sapphire substrate 1 is thermally cleaned at a substrate temperature of 1150 ° C. After that, the substrate temperature is lowered to 600 ° C., and the substrate 1 (0001)
N-type In _1-w (Ga _z Al _1-z ) _w N by growing the AlN buffer layer 2 on the surface and then raising the substrate temperature to 800 ° C.
Grow layer 3. The buffer layer 2, n-type In
On the substrate _{1 1-w (Ga z Al 1} -z) w N layer 3 are stacked,
Irradiating the Ar laser, for example, the TMG, TMI and Cp ₂ Mg supply and NH ₃ gas p-type an In _1-x while supply and the alternate _{(Ga y Al 1-y)} x N layer 4 growth Let

FIG. 5 shows the p-type In in the present invention.
Each atom constituting the _{1-x (Ga y Al 1} -y) x N layer 4 is a schematic view showing a state where the layer 4 is supplied onto the substrate is grown. In this figure, an example using a dopant 51 that is activated as an acceptor when it is arranged at the lattice position of the group III atom 52 is shown. Examples of such a dopant 51 include the above-mentioned Mg and the like.

In the In _1-x (Ga _y Al _1-y ) _x N layer 4,
The dopant 51 is a group III atom 5 of In, Ga and Al.
Activated as an acceptor if substituted to a second position, whereby the _{In 1-x (Ga y Al} 1-y) conductivity type _x N layer 4 is a p-type. When the dopant 51 is arranged at the interstitial position in the crystal, the dopant 51 is not activated as an acceptor.

When the p-type In _1-x (Ga _y Al _1-y ) _x N layer 4 is grown, group III atoms 52 and nitrogen atoms 53 are alternately supplied to the growth surface. At that time, the dopant 51 is supplied to the growth surface simultaneously with the group III atom 52. While the group III atom 52 and the dopant 51 are being supplied, the supply of the nitrogen atom 53 is stopped. Thus, the supply of the nitrogen atom 53 is stopped when the dopant 51 is supplied, and only the group III atom 52 and the dopant 51 are supplied, so that migration of these atoms on the growth surface is increased, The dopant 51 can be reliably incorporated into the lattice position that can function as an acceptor. Thus without the dopant 51 into the interstitial site, moreover, p-type In _1-x (Ga _y A
The l _{1 -y} ) _x N layer 4 does not have lattice defects that would occur when electron beam irradiation is performed.

By the way, since the barrier for the diffusion of adsorbed molecules on the substrate surface and the incorporation of the dopant into the lattice position is 1 to several eV, irradiation of light having a band wavelength corresponding to this energy causes further migration of atoms. Be promoted. That is, when the dopant 51 is supplied, if the light irradiation such as the laser is performed, the migration is further promoted. In this example, a wavelength of 51
An Ar laser of 4 to 528 nm was used.

After forming the p-type In _1-x (Ga _y Al _1-y ) _x N layer 4, dry etching is performed to form the p-type In _1-x (Ga _y A
l _1-y ) _x N layer 4 as n-type In _1-w (Ga _z Al _1-z ) _w N layer 3
Partially removed to a depth that reaches the inside of the. An n-type Al electrode 5 is vapor-deposited on the exposed n-type In _1-w (Ga _z Al _1-z ) _w N layer 3 to leave the remaining p-type In _1-x (Ga _y Al _1-y ) _x.
A p-type Al electrode 6 is deposited on the N layer 4. Each Al electrode 5,
After forming 6, the wafer-shaped substrate 1 is divided into chips by dicing to form semiconductor light emitting devices.

Details of the semiconductor layers 2, 3 and 4 in this embodiment are as follows.

Buffer layer 2: AlN, thickness of 500 Å, n-type In _1-w (Ga _z Al _1-z ) _w N layer 3: I
n _0.4 Ga _0.6 N, thickness 3 μm, p-type In _1-x (Ga _y Al
_1-y ) _x N layer 4: In _0.4 Ga _0.6 N, thickness 1 μm, p-type I
_{n 1-x (Ga y Al} 1-y) x N layer 4 in the p-type carrier concentration of: 5 × 10 ¹⁷ cm ^-3.

The size of the chip is 300 μm × 300 μm
And

The semiconductor light emitting device of this embodiment has a wavelength of 470.
Highly efficient blue light emission of nm was obtained.

(Embodiment 2) FIG. 2 is a vertical sectional view showing a semiconductor light emitting device according to Embodiment 2 of the present invention.

This semiconductor device is constructed by forming AlN on the substrate 21.
Buffer layer 22, n-type In _1-w (Ga _z Al _1-z ) _w N layer 2
3, p-type _{In 1-x (Ga y Al} 1-y) x N layer 24 are stacked. An n-type electrode 25 is formed on the entire surface on the substrate 21 side, and a p _- type Al electrode 26 is formed on the p-type In _1-x (Ga _y Al _1-y ) _x N layer 24.

In the semiconductor light emitting device of Example 2, the same source as in Example 1 can be used, and in the same manner as in Example 1,
While the growth surface on the substrate 21 is irradiated with an Ar laser, the supply of the group III atoms and the dopant and the supply of the nitrogen atom are alternately performed on the growth surface, so that the p-type In _1-x (Ga _y
An Al _1-y ) _x N layer 24 is grown. Wafer-shaped substrate 2
After the electrodes 25 and 26 are formed, 1 is divided into chips by dicing, and becomes a semiconductor light emitting element.

In this embodiment, the substrate 21 is n
Type ZnO substrate was used, and In was used as the n-type electrode 25. Details of the semiconductor layers 22, 23 and 24 laminated on the substrate 21 are as follows.

Buffer layer 22: n-type AlN, thickness 500
Angstrom, n-type In_1-w(Ga_zAl_1-z)_wN layer
23: In_0.4Ga_0.6N, thickness 3 μm, p-type In
_1-x(Ga _yAl_1-y)_xN layer 24: In_0.4Ga_0.6N, thickness
1 μm, p-type In_1-x(Ga_yAl_1-y)_xIn the N layer 24
p-type carrier concentration: 5 × 10¹⁷cm^-3.

The semiconductor light emitting device of this embodiment has a wavelength of 470
Blue light emission of nm was obtained, and light emission of higher efficiency than that of Example 1 was obtained.

(Embodiment 3) FIG. 3 is a vertical sectional view showing a semiconductor light emitting device of Embodiment 3 of the present invention. This semiconductor device has an AlN buffer layer 32, an n-type In
_1-w (Ga _z Al _1-z ) _w N cladding layer 37, undoped I
_{n 1-s (Ga t Al} 1-t) s N active layer 38 (s is 1 or less at greater than 0, t is 0 or more and 1 or less), p-type In _1-x (G
a _y Al _1-y ) _x N cladding layer 39, p-type In _1-u (Ga _v
Al _1-v ) _u N layer 310 (u is greater than 0 and 1 or less, v is 0)
The above is 1 or less) and the SiN insulating film 311 are laminated. The composition ratios z and y are less than t.
The SiN insulating film 311 has a stripe groove 31 with a width of 10 μm.
3 is formed to a depth reaching the surface of the p-type In _1-u (Ga _v Al _1-v ) _u N layer 310, and the p-type Al electrode 3 is formed thereon.
12 is formed, and the n-type electrode 35 is formed on the entire surface on the substrate 31 side.

In the semiconductor light emitting device of Example 3, the same source as in Example 1 can be used, and in the same manner as in Example 1,
While irradiating the growth surface with Ar laser, the above TMI, TM
By alternately supplying G, TMA, and Cp ₂ Mg and NH ₃ , the p-type In _1-x (Ga _y Al
_{1-y) x} N cladding layer 39, p-type In _1-u (Ga _v A
The l1 _-v ) _uN layer 310 is grown. SiN insulating film 311
Are formed by plasma CVD, and the stripe groove 3 is formed by photolithography and selective etching.
13 is formed. The resonator is formed by dry etching. After forming the resonator, the wafer-shaped substrate 31 is divided into chips to form a semiconductor laser.

In this embodiment, the substrate 31 is n
Type ZnO substrate was used, and In was used as the n-type electrode 35. The details of each semiconductor layer 32, 37, 38, 39 and 310 are as follows.

Buffer layer 32: n-type AlN, thickness 500
Angstrom, n-type In_1-w(Ga_zAl_1-z)_wN
Rad layer 37: n-type In_0.4Al_0.6N, thickness 2 μm,
N-dop In_1-s(Ga_tAl_1-t)_sN active layer 38: Anne
Dope In_0.4Ga_0.6N, thickness 0.1 μm, p-type In
_1-x(Ga_yAl_1-y)_xN-clad layer 39: p-type In_{0. Four}
Al_0.6N, thickness 1 μm, p-type In_1-u(Ga_vAl_1-v)
_uN layer 310: p-type In _0.4Ga_0.6N, thickness 0.2μ
m, p type In_1-x(Ga_yAl_1-y)_xN cladding layer 39,
p-type In_1-u(Ga_vAl_1-v)_uP-type key in N layer 310
Carrier concentration: 5 × 10¹⁷cm^-3.

The size of the chip is 300 μm × 1000 μ
m.

In the semiconductor light emitting device of this example, laser oscillation was obtained by pulse driving at 77K.

(Embodiment 4) FIG. 4 is a vertical sectional view showing a semiconductor light emitting device of Embodiment 4 of the present invention.

This semiconductor element is manufactured by forming AlN on the substrate 41.
Buffer layer 42, n-type _{In 1-w (Ga z Al} 1-z) w N cladding layer 47, an undoped _{In 1-s (Ga t Al} 1-t) s N layer 48, p-type In _1-x (Ga _y Al _1-y ) _x N cladding layer 49
And a p-type In _1-u (Ga _v Al _1-v ) _u N layer 410 is laminated. The composition ratios z and y are less than t. p-type _{In 1-x (Ga y Al} 1-y) x N in the cladding layer 49 and the p-type _{In 1-u (Ga v Al} 1-v) u N layer 410, a ridge of width 10μm projecting stripes A portion 415 is formed, and n-type GaA is formed on both sides of the ridge portion 415.
The s layer 414 is formed. p-type In _1-u (Ga _v Al
_A p-type Al electrode 412 is formed so as to cover the _1-v ) _u N layer 410 and the n-type GaAs layer 414, and an n-type electrode 45 is formed on the entire surface of the substrate 41 side.

The semiconductor light emitting device of Example 4 is manufactured as follows. First, on the substrate 41, the AlN buffer layer 42 p-type _{In 1-u (Ga v Al} 1-v) u N layer 410
Up to the above are laminated in the same manner as in Example 3.

P-type In _1-u (Ga _v Al _1-v ) _u N layer 410
An Al ₂ O ₃ film (not shown) is further formed thereon, and a width of 10 is formed by photolithography and dry etching.
Leave a μm stripe. Al remaining in stripes
The ₂ O ₃ film as a mask, p-type _{In 1-u (Ga v Al} 1-v) u N
Layer 410 and the p-type _{In 1-x (Ga y Al} 1-y) x N layer 49
Is etched to form a ridge portion 415. After etching, n-type GaA is formed by MBE method or MOVPE method.
The s layer 414 layer is grown, and the Al ₂ O ₃ film and the n-type GaAs layer 414 remaining on the upper surface of the ridge portion 415 are removed by photolithography and selective etching.
A resonator is manufactured by dry etching. After forming the resonator, the wafer-shaped substrate 41 is divided into chips to be a semiconductor laser.

In this embodiment, the substrate 41 is n
Type ZnO substrate was used, and In was used as the n-type electrode 45. Details of each semiconductor layer 42, 47, 48, 49 and 410 are as follows.

Buffer layer 42: n-type AlN, thickness 500
Angstrom, n-type In_1-w(Ga_zAl_1-z) Nw
Rad layer 47: n-type In_0.4Al_0.6N, thickness 2 μm,
N-dop In_1-s(Ga_tAl_1-t)_sN active layer 48: Anne
Dope In_0.4Ga_0.6N, thickness 0.1 μm, p-type In
_1-x(Ga_yAl_1-y)_xN-clad layer 49: p-type In_{0. Four}
Al_0.6N, thickness 1 μm, p-type In_1-u(Ga_vAl_1-v)
_uN layer 410: p-type In _0.4Ga_0.6N, thickness 0.2μ
m, p type In_1-x(Ga_yAl_1-y)_xN cladding layer 49,
p-type In_1-u(Ga_vAl_1-v)_uThe p-type key in the N layer 410
Carrier concentration: 5 × 10¹⁷cm^-3.

The size of the chip is 300 μm × 1000 μ
m.

In the semiconductor light emitting device of this example, laser oscillation was obtained by pulse driving at 77K.

Although the n-type ZnO substrates are used as the substrates 21, 31 and 41 in the above-mentioned second, third and fourth embodiments, an n-type SiC substrate or the like may be used. When using an n-type SiC substrate,
It is preferable to use n-type Ni / Au electrodes as the n-type electrodes 25, 35 and 45.

[0051]

According to the present invention, it is possible to provide a highly efficient and highly reliable semiconductor light emitting device having no lattice defect in the p-type InGaAlN layer.

The semiconductor light emitting device of the present invention can be manufactured by a small number of steps, and the thickness and carrier concentration of the p-type InGaAlN layer can be easily controlled.

[Brief description of drawings]

FIG. 1 is a vertical sectional view showing a semiconductor light emitting device according to a first embodiment of the present invention.

FIG. 2 is a vertical sectional view showing a semiconductor light emitting device according to a second embodiment of the present invention.

FIG. 3 is a vertical sectional view showing a semiconductor light emitting device according to a third embodiment of the present invention.

FIG. 4 is a vertical sectional view showing a semiconductor light emitting device according to a fourth embodiment of the present invention.

FIG. 5 is a schematic view showing a growth process of a p-type In _1-x (Ga _y Al _1-y ) N _x layer.

FIG. 6 is a schematic view showing a conventional semiconductor light emitting device.

[Explanation of symbols]

1 substrate 4 p-type In _1-x (Ga _y Al _1-y ) _x N layer 21 substrate 24 p-type In _1-x (Ga _y Al _1-y ) _x N layer 31 substrate 39 p-type In _1-x ( _{Ga y Al 1-y) x} N cladding layer 41 substrate 49 p-type _{In 1-x (Ga y Al} 1-y) x N layer 51 dopant 52 III group atom 53 nitrogen atoms

─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor ▲ Yoshi ▼ Tomohiko Ta 22-22, Nagaike-cho, Abeno-ku, Osaka City, Osaka Prefecture Sharp Corporation (72) Inventor Ken Obayashi 22-22, Nagaike-cho, Abeno-ku, Osaka City, Osaka Prefecture Sharp Corporation (72) Inventor Toshio Hata 22-22 Nagaike-cho, Abeno-ku, Osaka City, Osaka Prefecture Sharp Corporation (72) Inventor Naohiro Suyama 22-22 Nagaike-cho, Abeno-ku, Osaka City Osaka Prefecture (56) ) Reference JP-A-2-229475 (JP, A) JP-A-60-258987 (JP, A) Applied Physics, 1991, Volume 60, No. 2, p. 163-166 Ryoichi Ito, Michiharu Nakamura, "Semiconductor Laser: Fundamentals and Applications," Baifukan, p. 92 J. J. A. P, 1992, Vol. 31 Part 2, No. 2B, pp. L 139-L 142, edited by Isamu Akasaki, "Advanced Electronics I-1 III II-V Compound Semiconductors", Baifukan, 1994, p. 340 (58) Fields investigated (Int.Cl. ⁷ , DB name) H01S 5/00-5/50 H01L 33/00

Claims (4)

(57) [Claims] And 1. A n-type cladding layer, active layer and, p-type click La <br/> head layer and, p-type electrode formed on the p-type cladding layer
Preparative, a semiconductor light-emitting element is a semiconductor laser in this order, wherein the n-type cladding _{layer, In 1-w (Ga z} Al 1-z) w N
It consists (0 <z ≦ 1,0 ≦ w ≦ 1), the active _{layer, In 1-s (Ga t} Al 1-t) s N (0 <s ≦
1, 0 ≦ t ≦ 1, z <t, y <t), and the p-type cladding layer has M g as an acceptor ,
Lattice defects due to electron beam irradiation with controlled carrier concentration
Does not contain a p-type _{In 1-x (Ga y Al} 1-y) x N (0 <x ≦
1, 0 ≦ y ≦ 1) , an electron beam having M g as an acceptor between the p-type cladding layer and the p-type electrode, and having a controlled carrier concentration.
P-type In _1-u (Ga _v Al that does not include lattice defects due to irradiation
_1-v ) _u N layer (0 <u ≦ 1, 0 ≦ v ≦ 1), and the p-type cladding layer and the p-type In _1-u (Ga _v Al
_1-v) striped ridge portion is formed in the _u N layer, further, on both sides of the stripe-shaped ridge portion, GaA
A semiconductor light-emitting device having an s layer formed thereon . 2. The semiconductor light emitting device according to claim 1 , wherein the impurity of the n-type cladding layer is Si. 3. The carrier concentration of the p-type cladding layer is
A contract characterized by being controlled at 5 × 10 ¹⁷ cm ^-3
The semiconductor light emitting device according to claim 1 or 2. 4. A has an n-type substrate beneath the n-type cladding layer, a semiconductor light-emitting device according to any one of claims 1 to 3, characterized by providing the n-type electrode on the n-type substrate .