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JP3395609B2 - Solder bump formation method - Google Patents

Solder bump formation method

Info

Publication number
JP3395609B2
JP3395609B2 JP30544997A JP30544997A JP3395609B2 JP 3395609 B2 JP3395609 B2 JP 3395609B2 JP 30544997 A JP30544997 A JP 30544997A JP 30544997 A JP30544997 A JP 30544997A JP 3395609 B2 JP3395609 B2 JP 3395609B2
Authority
JP
Japan
Prior art keywords
solder
electronic component
solder bump
electrode
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP30544997A
Other languages
Japanese (ja)
Other versions
JPH11145193A (en
Inventor
省二 酒見
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP30544997A priority Critical patent/JP3395609B2/en
Publication of JPH11145193A publication Critical patent/JPH11145193A/en
Application granted granted Critical
Publication of JP3395609B2 publication Critical patent/JP3395609B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457Solder materials or compositions; Methods of application thereof
    • H05K3/3478Applying solder preforms; Transferring prefabricated solder patterns

Landscapes

  • Wire Bonding (AREA)

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、電子部品や基板の
電極上に半田バンプを形成する半田バンプ形成方法に関
するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solder bump forming method for forming a solder bump on an electrode of an electronic component or a substrate.

【0002】[0002]

【従来の技術】電子部品の実装方法として、半田バンプ
を用いる方法が知られている。この方法は、電子部品や
基板の電極上に予め半田の突出電極である半田バンプを
形成し、この半田バンプを電子部品や基板の電極に半田
付けするものである。この半田バンプを形成する方法と
して、従来より半田ボールによる方法が用いられてい
る。この方法は、半田バンプを形成しようとする電子部
品や基板の電極上に半田ボールを移載し、移載された半
田ボールをリフローによって加熱・溶融させて電極上に
球状の半田バンプを形成するものである。
2. Description of the Related Art As a mounting method for electronic parts, a method using solder bumps is known. In this method, solder bumps, which are protruding electrodes of solder, are previously formed on the electrodes of the electronic component or the substrate, and the solder bumps are soldered to the electrodes of the electronic component or the substrate. As a method of forming this solder bump, a method using a solder ball has been conventionally used. In this method, a solder ball is transferred onto an electrode of an electronic component or substrate on which a solder bump is to be formed, and the transferred solder ball is heated and melted by reflow to form a spherical solder bump on the electrode. It is a thing.

【0003】ところでこの方法では、半田ボールを電極
上に移載する際に半田ボールまたは電極のいずれかにフ
ラックスを塗布する必要がある。このフラックスは移載
時に半田ボールをフラックスの粘性によって電極上に貼
着する役割と、半田付け面の酸化膜を除去して半田付け
性を向上させる役割を有するものである。
In this method, however, it is necessary to apply flux to either the solder ball or the electrode when the solder ball is transferred onto the electrode. This flux has a role of adhering the solder ball onto the electrode due to the viscosity of the flux during transfer, and a role of removing the oxide film on the soldering surface to improve the solderability.

【0004】[0004]

【発明が解決しようとする課題】しかしながらフラック
スは一般に時間の経過とともに基板の電極を腐食させる
性質を有しており、フラックスを使用した場合には半田
付け後の信頼性を確保するため、リフロー後の洗浄を必
要とする。ところがフラックス洗浄に用いられる洗浄工
程は従来のフロン等の簡便な溶剤の使用が規制されたこ
とから複雑化し、より多くの手間とコストを要するもの
となっており、リフロー後の洗浄を必要としない半田バ
ンプの形成方法が望まれていた。
However, the flux generally has the property of corroding the electrodes of the substrate with the passage of time, and in the case of using the flux, in order to ensure reliability after soldering, after the reflow, Need cleaning. However, the cleaning process used for flux cleaning is complicated by the restriction of the use of conventional solvents such as CFCs, which requires more work and cost, and does not require cleaning after reflow. A method of forming solder bumps has been desired.

【0005】また、半田ボールを半田の供給手段として
用いることに起因する問題として、半田バンプ形成のコ
ストがある。電子部品の小型化によって半田ボールが小
径化するに伴い半田ボールのコストは大幅に上昇し、そ
の結果半田バンプの形成に要するコストを上昇させる要
因となっているという問題点があった。
Further, as a problem caused by using the solder balls as a solder supplying means, there is a cost for forming solder bumps. There has been a problem that the cost of the solder balls increases significantly as the diameter of the solder balls decreases due to the downsizing of electronic components, and as a result, the cost required to form the solder bumps increases.

【0006】そこで本発明は、リフロー後の洗浄や半田
ボールの使用を必要とせず、コストダウンを図ることが
できる半田バンプ形成方法を提供することを目的とす
る。
[0006] Therefore, an object of the present invention is to provide a solder bump forming method which can reduce the cost without requiring cleaning after reflow or using solder balls.

【0007】[0007]

【課題を解決するための手段】本発明の半田バンプ形成
方法は、半田バンプが形成される電子部品や基板の電極
位置に対応して基材上に半田ボールを使用せずに半田部
を形成する工程と、この半田部の表面の酸化膜をプラズ
マエッチングによって除去する工程と、前記基材の前記
半田部を電子部品や基板の電極に位置合わせする工程
と、前記基材を電子部品や基板に押圧しながら加熱して
前記半田部を前記電極表面に転写して半田バンプを形成
する工程とを含む。
According to a method of forming a solder bump of the present invention, a solder portion is formed on a base material without using a solder ball corresponding to an electrode position of an electronic component or a substrate on which the solder bump is formed. And a step of removing an oxide film on the surface of the solder portion by plasma etching, a step of aligning the solder portion of the base material with an electrode of an electronic component or a substrate, and the base material being an electronic component or a substrate. And pressing to heat to transfer the solder portion to the surface of the electrode to form a solder bump.

【0008】本発明によれば、電子部品や基板の電極位
置に対応して基材上に形成された半田部の表面をプラズ
マエッチングし、この半田部を電子部品や基板の電極上
に加熱・押圧して転写することにより、半田ボールを使
用せず、またフラックスの塗布を必要とせずに半田バン
プを形成することができる。
According to the present invention, the surface of the solder portion formed on the base material corresponding to the electrode position of the electronic component or the substrate is plasma-etched, and the solder portion is heated on the electrode of the electronic component or the substrate. By pressing and transferring, the solder bumps can be formed without using the solder balls and without the need to apply the flux.

【0009】[0009]

【発明の実施の形態】次に本発明の実施の形態を図面を
参照して説明する。図1(a),(b),(c),
(d)、図2(a),(b),(c)、図3(a),
(b),(c)は、本発明の一実施の形態の半田バンプ
の形成方法の工程説明図である。なお各図は半田バンプ
形成方法を工程順に従って示している。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, embodiments of the present invention will be described with reference to the drawings. 1 (a), (b), (c),
(D), FIG. 2 (a), (b), (c), FIG. 3 (a),
(B), (c) is process explanatory drawing of the forming method of the solder bump of one embodiment of this invention. Each figure shows the solder bump forming method in the order of steps.

【0010】まず図1(a)において、テープ状の基材
1上に半田部2を形成する。基材1としては、ポリイミ
ドなどの樹脂テープが用いられる。図1(b)に示すよ
うに、半田部2は、半田バンプが形成される基板や電子
部品の電極の位置に対応して形成され、半田を基材1上
に供給する方法としては、半田メッキ、蒸着、溶融半田
のディスペンスなどを用いることができる。
First, in FIG. 1A, a solder portion 2 is formed on a tape-shaped substrate 1. As the base material 1, a resin tape such as polyimide is used. As shown in FIG. 1B, the solder portion 2 is formed corresponding to the positions of the electrodes of the substrate and the electronic component on which the solder bumps are formed. Plating, vapor deposition, dispensing of molten solder, etc. can be used.

【0011】次に半田部2が形成された基材1をプラズ
マエッチング装置の真空チャンバ内に搬入し、減圧下で
プラズマエッチングを行う。図1(c)に示すように、
プラズマにより発生したイオンや電子が半田部2の表面
に衝突することにより(矢印a参照)、半田部2の表面
に生成した酸化膜2aが除去される。図1(d)は、プ
ラズマエッチングにより半田部2の表面が清浄面2bと
なった状態を示している。
Next, the base material 1 on which the solder portion 2 is formed is carried into the vacuum chamber of the plasma etching apparatus, and plasma etching is performed under reduced pressure. As shown in FIG. 1 (c),
Ions and electrons generated by the plasma collide with the surface of the solder portion 2 (see arrow a) to remove the oxide film 2a generated on the surface of the solder portion 2. FIG. 1D shows a state in which the surface of the solder portion 2 has become a clean surface 2b due to plasma etching.

【0012】次に半田バンプが形成される電子部品につ
いて説明する。図2(a)において電子部品3の上面に
は電極4が形成されている。この電子部品3はプラズマ
エッチング装置に送られ、前述の基材1と同様にプラズ
マエッチング処理される。ここで電極4の表面の酸化膜
4aや異物は、イオンや電子の衝突(矢印b参照)によ
り除去され、図2(c)に示すように電極4の表面は清
浄面4bとなる。なお、電極4の表面がAuなど酸化膜
を生成しないような材質で被覆されている場合には、電
極4についてはプラズマエッチングは必要とされず、省
略することができる。
Next, an electronic component on which solder bumps are formed will be described. In FIG. 2A, the electrode 4 is formed on the upper surface of the electronic component 3. The electronic component 3 is sent to the plasma etching apparatus and subjected to the plasma etching treatment in the same manner as the base material 1 described above. Here, the oxide film 4a and the foreign matter on the surface of the electrode 4 are removed by collision of ions and electrons (see arrow b), and the surface of the electrode 4 becomes a clean surface 4b as shown in FIG. 2 (c). When the surface of the electrode 4 is covered with a material such as Au that does not generate an oxide film, plasma etching is not necessary for the electrode 4 and can be omitted.

【0013】次に、半田部2が形成された基材1は表裏
が反転され、半田部2が下向きとされる。この後、基材
1はこの姿勢で電子部品3上に移載され、半田部2を対
応する電極4に位置合わせする。その後、図3(a)に
示すように、熱圧着ツール5により基材1を上方から電
子部品3に対して押圧するとともに、熱圧着ツール5に
内蔵されたヒータによって基材1を加熱することによ
り、半田部2を電極4上に転写する。
Next, the front surface and the back surface of the base material 1 on which the solder portion 2 is formed are turned upside down, and the solder portion 2 faces downward. Thereafter, the base material 1 is transferred onto the electronic component 3 in this posture, and the solder portion 2 is aligned with the corresponding electrode 4. After that, as shown in FIG. 3A, the base material 1 is pressed against the electronic component 3 from above by the thermocompression bonding tool 5, and the base material 1 is heated by the heater incorporated in the thermocompression bonding tool 5. Thus, the solder portion 2 is transferred onto the electrode 4.

【0014】加熱されて溶融した半田部2は電極4の表
面に半田接合されるが、このとき半田部2と電極4の接
合面はプラズマエッチングにより酸化膜や異物が除去さ
れているので、フラックスの塗布を必要とせずに良好な
半田接合を行うことができる。なお、この加熱・押圧に
よる転写の工程は、真空チャンバ内などの減圧雰囲気下
で行うことが望ましい。
The heated and melted solder portion 2 is solder-bonded to the surface of the electrode 4. At this time, since the oxide film and the foreign matter are removed by the plasma etching on the bonding surface of the solder portion 2 and the electrode 4, the flux Good solder joining can be performed without the need for coating. The heating / pressing transfer step is preferably performed in a vacuum chamber or the like under a reduced pressure atmosphere.

【0015】加熱の過程で半田部2が溶融した後は、図
3(a)に示すように基材1の下面と電子部品3の上面
との間の間隔を所望の寸法hに保つよう、熱圧着ツール
5の高さを制御する。この後、所定時間経過後に加熱を
停止すると、半田部2は寸法hを保ったまま冷却・固化
する。次いで、熱圧着ツール5を上昇させた後、基材1
を固化した半田部2から剥離させる。これにより、図3
(b)に示すように、電子部品3の電極4上にばらつき
のない所望の高さhの半田バンプ2’が形成される。
After the solder portion 2 is melted in the heating process, as shown in FIG. 3A, the space between the lower surface of the base material 1 and the upper surface of the electronic component 3 is kept at a desired dimension h. The height of the thermocompression bonding tool 5 is controlled. After that, when heating is stopped after a predetermined time elapses, the solder portion 2 is cooled and solidified while maintaining the dimension h. Next, after raising the thermocompression bonding tool 5, the substrate 1
Is separated from the solidified solder portion 2. As a result, FIG.
As shown in (b), solder bumps 2'having a desired height h without variations are formed on the electrodes 4 of the electronic component 3.

【0016】なおこの場合に形成される半田バンプ2’
は上面がフラットな形状となっている。球形状の半田バ
ンプが必要とされる場合には、電子部品3をリフロー装
置に送って加熱することにより、図3(c)に示すよう
な球形状の半田バンプ2”を形成することも可能であ
る。
The solder bumps 2'formed in this case
Has a flat top surface. When a spherical solder bump is required, it is possible to form the spherical solder bump 2 ″ as shown in FIG. 3C by sending the electronic component 3 to a reflow device and heating it. Is.

【0017】上記説明のように、半田バンプ形成用の半
田供給手段として、価格が高くしかも移載時の取り扱い
が困難な半田ボールを使用しないので、また供給された
半田を電極に接合するに際しフラックスの塗布を必要と
しないのでリフロー後の洗浄の必要がなく、低コストの
半田バンプ形成方法を実現することができる。
As described above, since a solder ball, which is expensive and difficult to handle during transfer, is not used as a solder supplying means for forming solder bumps, a flux is used to bond the supplied solder to the electrodes. Since it is not necessary to apply the above method, there is no need for cleaning after reflow, and a low-cost solder bump forming method can be realized.

【0018】なお、本発明は上記実施の形態に限定され
ないのであって、例えば本実施の形態では、テープ状の
基材1に半田部2を形成する例を示しているが、テープ
状のものでなく、所定寸法に切断され分離した形状のも
のであってもよい。また、本実施の形態では電子部品3
上に半田バンプ2’を形成する例を示しているが、半田
バンプが形成される対象はこれに限定されず、例えばプ
リント基板の電極上に半田バンプ(プリコート半田)を
形成するものであってもよい。
The present invention is not limited to the above embodiment. For example, the present embodiment shows an example in which the solder portion 2 is formed on the tape-shaped base material 1. Instead, it may have a shape that is cut into a predetermined size and separated. Further, in the present embodiment, the electronic component 3
Although the example of forming the solder bumps 2'is shown above, the object on which the solder bumps are formed is not limited to this. For example, the solder bumps (pre-coated solder) are formed on the electrodes of the printed circuit board. Good.

【0019】[0019]

【発明の効果】本発明によれば、半田バンプが形成され
る電子部品や基板の電極位置に対応して基材上に形成さ
れた半田部の表面をプラズマエッチングし、この半田部
を電子部品や基板の電極上に加熱・押圧して転写するよ
うにしているので、従来の半田バンプ形成方法で必要で
あったフラックスを使用することなく半田バンプを形成
することができ、したがってフラックスを使用した場合
に必要なリフロー後の洗浄を省略することができる。ま
た、電極上への半田の供給手段として高価格の半田ボー
ルを使用しないので低コストで半田バンプを形成するこ
とができ、さらには加熱・押圧時の熱圧着ツールの高さ
を制御することにより、ばらつきのない所望の高さ寸法
の半田バンプを形成することができる。
According to the present invention, the surface of the solder portion formed on the base material corresponding to the electrode position of the electronic component or the substrate on which the solder bump is formed is plasma-etched, and the solder portion is electronic component. Since the transfer is performed by heating and pressing onto the electrodes of the substrate or the substrate, the solder bumps can be formed without using the flux that was required in the conventional solder bump forming method. Therefore, the flux was used. The necessary post-reflow cleaning can be omitted. In addition, since high-priced solder balls are not used as a means for supplying solder to the electrodes, solder bumps can be formed at low cost, and by controlling the height of the thermocompression bonding tool during heating / pressing. Therefore, it is possible to form solder bumps having a desired height dimension without variations.

【図面の簡単な説明】[Brief description of drawings]

【図1】 (a)本発明の一実施の形態の半田バンプの形成方法の
工程説明図 (b)本発明の一実施の形態の半田バンプの形成方法の
工程説明図 (c)本発明の一実施の形態の半田バンプの形成方法の
工程説明図 (d)本発明の一実施の形態の半田バンプの形成方法の
工程説明図
1A is a process explanatory diagram of a solder bump forming method according to an embodiment of the present invention. FIG. 1B is a process explanatory diagram of a solder bump forming method according to an embodiment of the present invention. Process explanatory drawing of the solder bump formation method of one Embodiment (d) Process explanatory drawing of the solder bump formation method of one embodiment of this invention

【図2】 (a)本発明の一実施の形態の半田バンプの形成方法の
工程説明図 (b)本発明の一実施の形態の半田バンプの形成方法の
工程説明図 (c)本発明の一実施の形態の半田バンプの形成方法の
工程説明図
FIG. 2A is a process explanatory diagram of a solder bump forming method according to an embodiment of the present invention. FIG. 2B is a process explanatory diagram of a solder bump forming method according to an embodiment of the present invention. Process explanatory drawing of the solder bump forming method of one embodiment

【図3】(a)本発明の一実施の形態の半田バンプの形
成方法の工程説明図 (b)本発明の一実施の形態の半田バンプの形成方法の
工程説明図 (c)本発明の一実施の形態の半田バンプの形成方法の
工程説明図
3A is a process explanatory diagram of a solder bump forming method according to an embodiment of the present invention. FIG. 3B is a process explanatory diagram of a solder bump forming method according to an embodiment of the present invention. Process explanatory drawing of the solder bump forming method of one embodiment

【符号の説明】[Explanation of symbols]

1 基材 2 半田部 2a 酸化膜 2’ 半田バンプ 3 電子部品 4 電極 5 熱圧着ツール 1 base material 2 Solder part 2a oxide film 2'solder bump 3 electronic components 4 electrodes 5 Thermo compression tool

フロントページの続き (58)調査した分野(Int.Cl.7,DB名) H01L 21/60 H05K 3/32 B23K 3/00 Front page continued (58) Fields surveyed (Int.Cl. 7 , DB name) H01L 21/60 H05K 3/32 B23K 3/00

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】半田バンプが形成される電子部品や基板の
電極位置に対応して基材上に半田ボールを使用せずに
田部を形成する工程と、この半田部の表面の酸化膜をプ
ラズマエッチングによって除去する工程と、前記基材の
前記半田部を電子部品や基板の電極に位置合わせする工
程と、前記基材を電子部品や基板に押圧しながら加熱し
て前記半田部を前記電極表面に転写して半田バンプを形
成する工程とを含むことを特徴とする半田バンプ形成方
法。
1. A step of forming a solder portion on a base material without using a solder ball corresponding to an electrode position of an electronic component or a substrate on which a solder bump is formed, and a surface of the solder portion. Removing the oxide film by plasma etching, aligning the solder portion of the base material with the electrodes of the electronic component or the substrate, heating the base material while pressing the electronic component or the substrate, and soldering the solder. Forming a solder bump by transferring the portion to the surface of the electrode.
【請求項2】前記転写により半田バンプを形成した後、2. After forming solder bumps by the transfer,
前記電子部品を加熱することにより球形状の半田バンプSpherical solder bumps by heating the electronic components
を形成するようにしたことを特徴とする請求項1記載の2. The structure according to claim 1, wherein
半田バンプ形成方法。Solder bump formation method.
JP30544997A 1997-11-07 1997-11-07 Solder bump formation method Expired - Fee Related JP3395609B2 (en)

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KR100411144B1 (en) * 2002-02-26 2003-12-24 서울대학교 공과대학 교육연구재단 Reflow Method of fluxless solder bump using Ar-H2 Plasma
JP2006134899A (en) * 2002-11-28 2006-05-25 Toray Eng Co Ltd Bonding method and bonder
JP5210496B2 (en) * 2006-03-27 2013-06-12 神港精機株式会社 Manufacturing method of semiconductor device
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