JP3392079B2 - Probe card - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a probe card used for measuring various electrical characteristics of a semiconductor integrated circuit formed on a wafer such as an LSI.

[0002]

2. Description of the Related Art A probe card used for measuring various electrical characteristics of a semiconductor integrated circuit formed on a wafer such as an LSI is classified into a horizontal type using a lateral probe called a cantilever type and a vertical type. Vertical type that uses a vertical probe called a type, a type in which a probe made of a metal wire is directly attached to a substrate on which pattern wiring is formed, and a bump-shaped type that applies photolithography technology to a flexible substrate. There is a type that forms a probe.

[0003]

The above-mentioned cantilever type probe card has no problem if the electrodes of the semiconductor integrated circuit formed on the wafer such as the LSI, which is the object to be measured, are in the peripheral portion. It is difficult to apply it to those that are formed inside. In addition, when it is desired to measure a large number of probes at the same time, the arrangement of the probes may be complicated and may not be applicable. Further, since the probe tends to be long, it is not suitable for measurement of a semiconductor integrated circuit operating at high speed.

On the other hand, in the case of a vertical type probe card,
Although there is no problem like the cantilever type, in the case where more probes are used, the load applied to the semiconductor integrated circuit increases due to the bending of the bent portion. For this reason, there is a problem that the mechanical load on the probe card and the test device that supports it increases. Further, when the contact portion at the tip of the probe contacts the electrode, it does not slide laterally on the surface of the electrode. Sliding the surface of the electrode at the contact portion in the lateral direction is called scrub. The scrub has a function of preventing aluminum oxide formed on the electrode from adhering to the contact portion. Therefore, in a vertical type probe card with almost no scrub, it is necessary to perform cleaning for removing aluminum oxide adhering to the contact portion every time a certain measurement is performed.

Further, the probe card of the type in which the probe is directly attached to the substrate or the type of using the flexible substrate requires much longer time and cost for manufacturing than the former two. In addition, if the electrodes of the semiconductor integrated circuit are arranged in a complicated manner, there is a problem that it becomes difficult to arrange the probe as in the case of the cantilever type.

The present invention was devised in view of the above circumstances, and an object thereof is to provide a probe card capable of solving the above-mentioned problems .

[0007]

A probe card according to the present invention is a probe card used for measuring electrical characteristics of a semiconductor integrated circuit formed on a wafer. And a probe with a flange, which is a metal needle having a curved tip and is attached downward to the surface of the substrate on the wafer side and is electrically connected to the wiring pattern, and a gap on the wafer side of the substrate.
And a supporting substrate having a through hole through which the base end portion of the flanged probe is inserted, the flanged probe being on the wafer side surface of the supporting substrate. It is characterized in that a collar portion that abuts is formed.

More preferably, the tip portion of the flanged probe is a first portion extending from the collar portion toward the wafer.
Curved portion, a parallel portion that is continuous with the first curved portion and is substantially parallel to the wafer, and a second curved portion that is continuous with the parallel portion and that curves toward the wafer. And a tip portion that is continuous with the second curved portion and is in contact with the electrode on the wafer substantially perpendicularly, and the first and second curved portions are curved during overdrive. Tip slides laterally across electrode surface on wafer
It is desirable to have such a configuration.

More preferably, the tip portion of the collared probe
It is desirable to make the cross-sectional shape of the minute and proximal end parts rectangular.
Good For the probe with a collar, nickel,
Gusten or molybdenum and rhodium or palladium, etc.
Use of alloys composed of precious metals
Is desirable.

[0010]

1 is a schematic front view of a probe with a collar according to an embodiment of the present invention, FIG. 2 is a schematic sectional view of a probe card using the probe with a collar, and FIG. 4 is a schematic sectional view of another probe card using a probe with a collar, FIG. 4 is a schematic front view of a probe with a collar according to another embodiment of the present invention, and FIG. 5 is another probe using the probe with a collar. FIG. 6 is a schematic sectional view of a card, FIG. 6 is a schematic front view of a collared probe according to another embodiment of the present invention, and FIG. 7 is a schematic front view of a collared probe according to another embodiment of the present invention. FIG. 8 is a schematic front view showing the shape of the tip of the contact portion of the collared probe according to the embodiment of the present invention.

A probe 100 with a collar according to the embodiment of the present invention has a collar portion 130, a contact portion 110 extending from the collar portion 130 to one side, and a flange portion 130 extending from the collar portion 130 to the other side. The contact portion 110 has a first bending portion 111 and a second bending portion 113, and the connecting portion 120 is formed straight.

The conventional probe is manufactured by bending a fine wire such as tungsten, but since the probe 100 with the flange has the flange portion 130, it is manufactured by using the following plating. First, a resist is applied to an electrode plate whose surface is coated with a conductive release agent. Here, unless the release agent having conductivity is applied to the electrode plate, the flanged probe 100 formed by plating cannot be removed from the electrode plate. Further, the thickness of the resist is made equal to the thickness of the collared probe 100 to be manufactured. For example, it is 50 μm.

Next, a probe 10 with a collar on the resist is provided.
The 0 shape is exposed and developed. That is, as shown in FIG. 1, a plurality of patterns having the contact portion 110, the connecting portion 120, and the collar portion 130 are formed on the resist. Then, the pattern of the collared probe 100 is formed in the resist in a concave form. The release agent having conductivity is exposed at the bottom of this pattern. The concave portion of this resist has a rectangular cross section.

Further, the electrode plate is immersed in a liquid tank in which a plating liquid is stored. The other electrode plate is immersed in this liquid tank. Therefore, when a current is passed between both electrode plates, the metal is deposited in the recesses of the resist formed on the electrode plates.

The metal deposited in the recess is a mixed metal or alloy of nickel, tungsten or molybdenum, with copper as a base material, and a noble metal such as rhodium or iridium.

The flanged probe 100 formed by depositing metal is removed after the electrode plate is taken out of the liquid tank.

Probe 1 with a collar removed from the electrode plate
For No. 00, metallization of a noble metal such as rhodium or iridium is performed, and after metallization, high temperature treatment in a non-oxidizing atmosphere is performed to diffuse the metallized metal to the base material and firmly adhere the metalized metal.

As described above, since the collared probe 100 is manufactured by utilizing the photolithography technique, it has much higher dimensional accuracy than the conventional one that bends a thin tungsten wire.

The collar portion 130 of the probe 100 with the collar.
Is a portion extending horizontally to the left and right as shown in FIG. The flange portion 130 is adapted to come into contact with the lower surface 312 of the supporting substrate 310 of the supporting means 300 of the probe card A described later. Therefore, the upper surface 13 of the collar portion 130
No. 1 is flat except for the protruding connecting portion 120.

The contact portion 110 of the collared probe 100 is suspended from the center of the lower surface 132 of the collar portion 130. The contact portion 110 includes a first bending portion 111 that bends to the left side in FIG. 1, a parallel portion 112 that follows the first bending portion 111 and is substantially parallel to the flange portion 130, and the parallel portion 112. 1 and has a second bending portion 113 that bends downward in FIG. 1, and a tip portion 114 that follows the second bending portion 113 and has a sharpened tip. Since the first curved portion 111 and the second curved portion 113 are curved at an angle of approximately 90 degrees and are curved in mutually opposite directions, the tip 114 that comes into contact with the electrode is directed downward. ing.

Further, the connecting portion 120 of the collared probe 100 is provided so as to extend straight from the center of the upper surface 131 of the collar portion 130 in the vertical direction.

The contact part 110 of the collared probe 100
The cross-sectional shape of the connection part 120 and the connection part 120 is rectangular. This brings about the following advantages. That is, the contact part 110
Bends from the first bending portion 111 and the second bending portion 113 when coming into contact with the electrodes, but the portion related to this bending is only the thickness and the width dimension is irrelevant. Therefore, the collared probe 100 has succeeded in reducing the unnecessary width dimension unlike the conventional probe made of a thin wire of tungsten. For this reason, it is possible to arrange the collared probes 100 at a higher density.

Next, a probe card A using the thus configured probe 100 with a collar will be described.
The probe card A is provided with a collared probe 100 that contacts an electrode (not shown) of a semiconductor integrated circuit (not shown) formed on a wafer such as an LSI to be measured, and a wiring pattern (not shown). Substrate 200, and the probe 1 with the collar provided on the back side of the substrate 200.
00 for supporting 00. The collared probe 100 includes a collar portion 130 and the collar portion 130.
The contact portion 110 extending to one side and the collar portion 13
0 to the other side of the connecting portion 120, the connecting portion 120 penetrates through a through hole 311 formed in a supporting substrate 310 constituting the supporting means 300, and the collar portion supports the supporting portion. The lower surface 312, which is one surface of the substrate 310, is configured to come into contact with the lower surface 312 and to prevent the connection portion 120 from penetrating into the through hole 311.

The substrate 200 is a laminated substrate on which necessary wiring patterns are formed. Also, this substrate 2
00 has a plurality of through holes 2 corresponding to the arrangement of the electrodes.
10 has been opened.

The supporting means 300 provided on the back side of the substrate 200 is, for example, a single supporting substrate 310 made of ceramics having a thickness of 0.25 mm and having an insulating property.
The support substrate 310 and the substrate 2 are hung from the substrate 200.
00 and a spacer 320 that forms a constant gap with the same.

The support substrate 310 has a plurality of through holes 311 corresponding to the arrangement of the electrodes. Therefore, the through hole 311 is the through hole 2 of the substrate 200.
The arrangement is consistent with 10. In addition, this through hole 311
Is set to a size such that the collar portion 130 of the collared probe 100 does not enter. The through hole 311 is a portion through which the connecting portion 120 of the collared probe 100 is penetrated.

On the upper surface of the upper support substrate 310,
An insulating resin, for example, silicone rubber 330 is applied. The silicone rubber 330 fixes the collared probe 100 to the upper support substrate 310. Therefore, the flanged probe 100 is fixed to the support means 300 because of the silicone rubber 330.

Here, the connecting portion 1 of the probe 100 with a collar.
20 penetrates through the through hole 311 of the supporting substrate 310 of the supporting means 300 attached to the substrate 200 and the through hole 210 of the substrate 200. Further, in the flanged probe 100, the flange portion 130 has the upper surface 131 in close contact with the lower surface 312 of the support substrate 310, so that the connection portion 1
20 is restrained from being inserted into the through hole 311 any more.

Moreover, since the collared probe 100 is manufactured by utilizing the photolithography technique as described above, it has a much higher dimensional accuracy than the conventional one that bends a thin tungsten wire. .
That is, the dimension from the lower surface 312 of the support substrate 310 with which the upper surface 131 of the collar portion 130 is in contact to the tip portion 114 at the tip of the contact portion 110 is constant.

The collared probe 100 is connected to the wiring pattern of the substrate 200 by the solder 220 at the rear end of the connecting portion 120.

Next, measurement of various electrical characteristics of a semiconductor integrated circuit formed on a wafer such as an LSI by using the probe card A thus constructed will be described. First, a semiconductor integrated circuit in a wafer state is sucked onto a suction table (not shown) provided below the probe card A. The suction table and the probe card A are moved relative to each other, and the tip portion 11 of the contact portion 110 of the collared probe 100 is moved.
4 is brought into contact with the electrodes of the semiconductor integrated circuit.

Then, even after the tip 114 contacts the electrode, the distance between the suction table and the probe card A is shortened (hereinafter referred to as "overdrive"). Due to this overdrive, the contact portion 110 of the collared probe 100 becomes the first bending portion 111 and the second bending portion 113.
Bend at. This bending causes a scrub in which the tip 114 of the contact portion 110 of the collared probe 100 slides laterally on the surface of the electrode. Even if foreign matter such as aluminum oxide adheres to the tip 114, this scrub removes it. Therefore, unlike the conventional case, it is not necessary or extremely necessary to perform cleaning for removing the aluminum oxide adhering to the contact portion every time a certain measurement is performed.

Another probe card using the collared probe 100 is a probe card B as shown in FIG. The difference of this probe card B from the above-mentioned probe card A is the connection between the probe 100 with the collar and the wiring pattern of the substrate 200. That is, in the probe card B, the connecting portion 12 of the collared probe 100 is
0 is connected to the wiring pattern exposed on the back surface of the substrate 200. Moreover, the collared probe 10
The intermediate substrate 230 is used for the connection between 0 and the wiring pattern. Internal wiring 231 is formed on the intermediate substrate 230, and the internal wiring 231 compensates for the difference between the layout pattern of the connecting portions 120 of the collared probe 100 and the layout pattern of the wiring pattern of the substrate 200. is there. When such an intermediate substrate 230 is used, the substrate 2
It is not necessary to prepare 00 for each semiconductor integrated circuit, and the intermediate substrate 230 can be used.

Instead of the collared probe 100 according to the above-described embodiment, the collared probe 4 as shown in FIG. 4 is used.
00, 500, 600 are also possible. The collared probe 400 shown in FIG. 4 is different from the collared probe 100 in the shape of the contact portion 410. That is, the contact portion 410 of the collared probe 400 has the lower surface 432 of the collar portion 430.
Hanging from the center. The contact portion 410 includes a first bending portion 411 that bends to the right in FIG. 4, a second bending portion 412 that follows the first bending portion 411, and projects to the right in FIG. Curved part 41 of 2
2 is followed by a third bending portion 413 that bends downward in FIG. 4, and this third bending portion 413,
It has a tip portion 414 whose tip is sharpened. Second
Since the curved portion 412 is formed in a substantially horizontal U shape, the tip portion 414 contacting the electrode is directed downward. The tip portion 414 is set so as not to be on the same vertical line as the connecting portion 420.

The other portions of the collared probe 400, that is, the connecting portion 420 and the collar portion 430 are similar to those of the collared probe 100 described above.

In the probe card using the probe 400 with the collar, the contact portion 410 bends around the second bending portion 412 when overdrive is applied. This causes scrubbing.

A probe card C using the collared probe 400 will be described with reference to FIG. This probe card C is obtained by changing the collared probe 100 of the probe card B shown in FIG. 3 into a collared probe 400. That is, in this probe card C, the connecting portion 420 of the collared probe 400 is connected to the wiring pattern exposed on the back surface of the substrate 200. Moreover, the connection between the collared probe 400 and the wiring pattern is
The intermediate substrate 230 is used. This intermediate substrate 230 is
The internal wiring 231 is formed, and the internal wiring 231 is formed.
This compensates for the difference between the layout pattern of the connecting portions 420 of the collared probe 400 and the layout pattern of the wiring pattern of the substrate 200. Such an intermediate substrate 23
When 0 is used, it is not necessary to prepare the substrate 200 for each semiconductor integrated circuit, and the intermediate substrate 230 can be used.

Further, instead of the collared probe 100 according to the above-mentioned embodiment, a collared probe 500 as shown in FIG. 6 is also possible. Probe 5 with a collar shown in FIG.
00 indicates that the shape of the contact portion 510 is the probe 10 with the collar.
Different from 0. In this flanged probe 500, the contact portion 510 is formed straight. Therefore, the collared probe 500 is formed as if it were a cross. However, a part of the contact part 510 is partially deformed.
11 is thinner than the other parts. When overdrive is applied, the deformable portion 511 is deformed and scrubbing occurs.

Further, instead of the collared probe 100 according to the above-described embodiment, a collared probe 600 as shown in FIG. 7 is also possible. In the collared probe 600 shown in FIG. 7, the shape of the collar portion 630 is different from the shape of the collar portion 130 of the collared probe 100 described above. That is, although the collar portion 130 of the collared probe 100 was projected to the left and right sides, the collar portion 6 of the collared probe 600 was formed.
The reference numeral 30 projects only on one side on the left side. Even with such a shape, the curvature of the first curved portion 611 and the second curved portion 613 for causing scrub is sufficient, and the upper surface 631 of the collar portion 630 is in contact with the supporting substrate 310. From the lower surface 312 to the tip 6 of the tip of the contact portion 610
It is also ensured that all dimensions up to 14 are constant.

Further, although the tip 114 of the contact portion 110 of the collared probe 100 described above is sharpened,
It may be as shown in FIG.

That is, the tip 114 of the collared probe 100 may be flat as shown in FIG. 8 (A). Further, the tip portion 114 of the collared probe 100 may have a recessed central portion as shown in FIGS. 8 (B) and 8 (C). Furthermore, the tip 114 of the probe with collar 100 is
May be rounded as shown in FIG.

If it is of the type shown in FIG.
The flat contact with the electrodes ensures reliable contact. Further, the type shown in FIGS. 8B and 8C can correspond to the bump type in which the electrode is raised. With this type of tip, cleaning from the front side to the back side in the drawing is easy even if aluminum oxide should collect in the recessed portion. Further, in the case of the type shown in FIG. 8D, there is no possibility that the electrodes will be destroyed even if overdrive is applied too much.

The shape of the tip of the contact portion is the same for the other collared probes 400, 500 and 600.

[0044]

A probe card according to claim 1 of the present invention exhibits, met probe card used to measure the electrical cord properties of the semiconductor integrated integrated circuits formed on a wafer
Te, a substrate on which a wiring pattern is formed, a flanged probe tip portion is the wiring pattern electrically connected with attached downward to the surface of the wafer side of the substrate a metal needle which is curved, the substrate Open a gap on the wafer side
And a support substrate formed with a through hole through which the base end portion of the collared probe is inserted, the collared probe contacting the wafer-side surface of the substrate. It is characterized in that a flange portion is formed in contact therewith.

Therefore, the base end portion of the collared probe is supported.
When inserted into the through hole of the holding substrate, the collar of the probe is supported
Abut the board and attach the probe to the board in this state
Will be possible. Moreover, pull out the probe straight
It can be replaced by just inserting it, and assembly is easy.
It will be easier.

Further, in the probe card according to claim 2 of the present invention, the tip portion of the collared probe is different from the collar portion.
The first curved portion extending toward the wafer and the first curved portion.
Is continuous with the curved part of the
Parallel part and the continuous part of the parallel part and the wafer
A second bending portion that bends toward and continuous with the second bending portion
And the tip that contacts the electrode on the wafer almost perpendicularly
And, when overdriving, the first and second
The curved part of the
It is characterized by sliding the surface of the upper electrode laterally .

For this reason, the tip of the collared probe is not
Overdriven in contact with the electrode surface of an elephant wafer
Then, scrubbing naturally occurs and the tip of the collared probe
Foreign matter such as aluminum oxide adhering to the
As a result, the number of cleanings can be reduced.
It

A probe card according to claim 3 of the present invention.
Is the cross-sectional shape of the tip and base of the probe with collar.
Is a rectangular shape.

For this reason, the tip of the collared probe is
It bends when it comes into contact with the electrodes.
It does only the thickness, not the width dimension. Obey
A conventional probe made of fine tungsten wire
It is possible to reduce the width of the collared probe compared to
It is possible to arrange the probes with collars in high density.
Will be possible.

A probe card according to claim 4 of the present invention.
The probe with collar is nickel, tungsten or molybdenum.
Alloy of Buden with noble metal such as rhodium or palladium
It is characterized by being composed of.

Therefore, it is suitable for high-speed semiconductor integrated circuits.
You can

[0052]

[0053]

[0054]

[0055]

[Brief description of drawings]

FIG. 1 is a schematic front view of a collared probe according to an embodiment of the present invention.

FIG. 2 is a schematic sectional view of a probe card using this flanged probe.

FIG. 3 is a schematic cross-sectional view of another probe card using this probe with a collar.

FIG. 4 is a schematic front view of a collared probe according to another embodiment of the present invention.

FIG. 5 is a schematic cross-sectional view of another probe card using this probe with a collar.

FIG. 6 is a schematic front view of a collared probe according to another embodiment of the present invention.

FIG. 7 is a schematic front view of a collared probe according to another embodiment of the present invention.

FIG. 8 is a schematic front view showing the shape of the tip of the contact portion of the collared probe according to the embodiment of the present invention.

[Explanation of symbols]

100 collared probe 110 contact part 120 connections 130 Collar

─────────────────────────────────────────────────── ─── Continuation of front page (72) Shinichiro Furusaki 2-5-13 Nishi-Nagasu-cho, Amagasaki-shi, Hyogo Japan Electronic Materials Co., Ltd. (72) Teruhisa Sakata 2--5, Nishi-Nagasu-cho, Amagasaki-shi, Hyogo No. 13 in Japan Electronic Materials Co., Ltd. (56) Reference JP-A-4-143663 (JP, A) JP-A-11-191453 (JP, A) JP-A-8-220139 (JP, A) (58) Fields surveyed (Int.Cl. ⁷ , DB name) G01R 1/06-1/073 H01L 21/64-21/66

Claims (4)

(57) [Claims] 1. A probe card used for measuring electrical characteristics of a semiconductor integrated circuit formed on a wafer, comprising a substrate on which a wiring pattern is formed and a metal needle having a curved tip portion. A flanged probe that is attached downward to the wafer side surface of the substrate and is electrically connected to the wiring pattern, and a base end portion of the flanged probe that is arranged with a gap on the wafer side of the substrate. And a support substrate having a through hole formed therein, through which the flanged probe is provided with a flange portion that abuts a surface of the support substrate on the wafer side. 2. A tip portion of the collared probe is continuous with the first curved portion extending from the collar portion toward the wafer, and substantially continuous with the first curved portion. A parallel portion that is parallel to the second curved portion; a second curved portion that is continuous with the parallel portion and curves toward the wafer; a second curved portion that is continuous with the second curved portion; 2. The first and second curved portions are curved at the time of overdrive, and the curved front portion slides laterally on the surface of the electrode on the wafer. The described probe card. 3. A tip end portion and a base end portion of the collared probe.
The probe card according to claim 1 or 2 , wherein the cross-sectional shape of the portion is rectangular . 4. The probe card according to claim 1, wherein the probe with a collar is made of an alloy of nickel, tungsten or molybdenum and rhodium or palladium.