JP3375850B2 - Semiconductor laser device and method of manufacturing the same - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light source for an optical disk recording / reproducing apparatus, and more particularly to a DVD, a CD-
The present invention relates to a semiconductor laser device used as a light source for a recording / reproducing device capable of recording / reproducing R (Rewritable) disks and a manufacturing method thereof.

[0002]

2. Description of the Related Art FIG. 6 shows a conventional semiconductor laser device.
The laser chip 3 is attached to the element-attached surface of the Cu ring 1. The laser chip 3 is electrically connected to the lead pin 7 and the Au wire 5. A light output monitor photodiode 4 is attached to the stem 2 and is electrically connected to a lead pin 8 by an Au wire 6. The lead pins 7, 8 and 9 are attached to the stem 2, and the Cu ring 1 and the stem 2 are bonded by resistance welding. The lead pins 7 and 8 are electrically insulated from the stem 2 by an insulator around the pins. C
The u-ring 1 and the stem 2 are made of a conductor. As described above, the laser chip 3 is electrically connected to the lead pin 7 . The optical output monitor photodiode 4 is electrically connected to the lead pins 8 and 9.

A method of manufacturing this laser device will be described with reference to FIGS.
Shown in. First, (1) the laser chip 3 is attached to the Cu ring 1. Separately from this, (2) the optical output monitor photodiode 4 is attached to the stem 2. (3) The photodiode 4 and the lead pin 8 are connected by the Au wire 6. Then, (4) the Cu ring 1 and the stem 2 are bonded by resistance welding. (5) The laser chip 3 and the lead pin 7 are connected by the Au wire 5 to complete the process.
In such a conventional semiconductor laser device, only one laser chip is attached to one package.

[0004]

By the way, the wavelength 780
With the laser light of nm, the light cannot be narrowed down to the size of the pit on the DVD disk, and a semiconductor laser device having a wavelength of 635 nm or 650 nm is required. On the other hand, the dye used for the CD-R disc has a wavelength of 635.
nm laser light or 650 nm laser light is not reflected but transmitted, and reading is impossible. Therefore, in order to record / reproduce a CD-R disc, a wavelength of 780
nm semiconductor laser device is required.

Nowadays, various discs such as CDs, CD-ROMs, CD-Rs, and DVDs are widely used, and it is necessary to record and reproduce all discs by one recording / reproducing apparatus. In particular, in order to record / reproduce CD-R and DVD with one recording / reproducing apparatus, the wavelength 78
Two semiconductor laser devices having a wavelength of 0 nm and a wavelength of 635 nm or 650 nm must be used. For this reason,
The pickup becomes large and complicated.

Therefore, the wavelength is 635 nm or 650 n
A semiconductor laser device in which a m semiconductor laser chip and a 780 nm wavelength semiconductor laser chip are horizontally mounted on one package has been proposed. However, this is affected by the laser chip width and the submount width. Since the light emitting point position interval of the chip becomes large, it is difficult to make a pickup, and even if it is made, there are many restrictions.

The present invention relates to a pickup for recording / reproducing a DVD and a CD-R with one recording / reproducing apparatus.
It is possible to realize with a semiconductor laser device in one package, and it is intended to easily downsize and simplify the pickup.

[0008]

According to the present invention, a metal block having a surface with a laser element is also mounted on the stem, and a laser chip is mounted on each of the stem and the Cu ring. One of the
On the lead pin of the laser chip and the laser chip on one side
Attach the u-wire and set the stem and the Cu ring.
Au wire wire on the other laser chip and relay lead pin
After mounting the stem, the stem and Cu ring are bonded by resistance welding so that the installation angles of the two laser chips are different.
The relay lead pin and the lead of the other laser chip above.
Because mounting the Au wire wire to the pin, the two laser chip of the semiconductor laser device substantially align the optical axis (two laser chip emitting point position spacing very small) of matches in a single package as viewed from the optical system It is characterized by providing.

In the present invention, the wavelength is 635 nm or 65.
The 0 nm semiconductor laser chip and the 780 nm wavelength semiconductor laser chip have their optical axes substantially aligned when viewed from the optical system (2
Since the distance between the two laser chip emission points is extremely small), it is possible to use only one semiconductor laser device in one package for DVD and CD.
A pickup for recording / reproducing -R with one recording / reproducing apparatus can be manufactured, and the pickup can be easily miniaturized and simplified.

[0010]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to FIG.
~ It demonstrates based on FIG. FIG. 1 is a top view of the semiconductor laser device of the present invention. (A view from the direction of the arrow in FIG. 2) An insulating submount 13 is provided on the element-attached surface of the Cu ring 11.
The semiconductor laser chip 14 having a wavelength of 635 nm or 650 nm is attached via the. Submount 1
A conductive material such as Au is vapor-deposited on the surface of the sub-mount 3, and the sub-mount 13 is connected by the Au wire 17 to the relay lead pin 2
0, the laser chip 14 is C by the Au wire 18
It is electrically connected to the u-ring 11. A metal block 15 having a surface with an element is attached on the stem 12. A semiconductor laser chip 16 having a wavelength of 780 nm is attached to the metal block 15. Laser chip 1
6 is electrically connected to a lead pin 21 by an Au wire 19. An optical output monitor photodiode 27 is attached on the stem 12, and the photodiode 27 and the lead pin 29 are electrically connected by an Au wire 28, but they are omitted in FIG.

As can be seen from FIG. 1, since the laser chip 14 and the laser chip 16 are mounted back to back so that their installation angles differ from each other by 180 °, the thickness of each laser chip and the connection to each laser chip are connected. As long as the loop of the Au wire is allowed, it can be mounted as close as possible so that the optical axis is aligned as close as possible.

FIG. 2 shows a three-dimensional view of the semiconductor laser device of the present invention. In FIG. 2, the metal block 15, the semiconductor laser chip 16 having a wavelength of 780 nm, and the Au wire 19 are omitted for clarity. The lead pins 21, 26, 29 on the stem 12 are the insulating material 23 around the lead pins,
The stem 12 is electrically insulated by 22 and 30. The relay lead pin 20, which is electrically connected to the submount 13 by the Au wire 17, is covered with an insulating material 24 around it, and is electrically insulated from the Cu ring 11. Further, the relay lead pin 20 is not connected to the stem 12, and the lead pin 2 on the stem 12
6 and the Au wire 25 are electrically connected. By providing this relay lead pin 20, the submount 1
3 and the relay lead pin 20 are electrically connected in advance by the Au wire 17 so that the Cu ring 11
Even after the gap between the submount 13 and the metal block 15 is extremely narrowed by adhesively assembling the stem 12 and the stem 12, the submount 13 and the lead pin 26 can be electrically connected to each other. The semiconductor laser device of the invention can be manufactured.

Next, FIG. 4 shows a method of manufacturing the semiconductor laser device of the present invention. First, (1) wavelength 6 on the Cu ring 11
35 nm or 650 nm semiconductor laser chip 14
Then, the submount 13 attached to is attached.
(2) The laser chip 14 and the Cu ring 11 are connected by the Au wire 18. (3) The submount 13 and the relay lead pin 20 are connected by the Au wire 17. Separately from this, (4) the optical output monitor photodiode 27 is attached on the stem 12. (5) The semiconductor laser chip 16 having a wavelength of 780 nm is attached to the metal block 15 on the stem 12. (6) The photodiode 27 and the lead pin 29 are connected by the Au wire 28. (7) Connect the laser chip 16 and the lead pin 21 to the Au wire 1
Connect with 9. Then, (8) the Cu ring 11 and the stem 12 are bonded by resistance welding. (In FIG. 3, the stem 12 is rotated 180 ° to the left and right with respect to the paper surface, and the laser chips 14 and 16 are bonded so as to face each other.) (9)
This is completed by connecting the relay lead pin 20 and the lead pin 26 attached to the stem 12 with the Au wire 25.

According to the present invention, the light emitting point position interval with a semiconductor laser having a wavelength of 780 nm can be made close to about 100 μm. Further, in the above embodiment, two laser chips are attached to one package, but three or more laser chips can be attached in the same manner.

FIG. 5 shows a top view of an embodiment in which three laser chips are attached to one package. The submount 40 has a trapezoidal sectional shape, and the laser chip 14 is attached to a portion corresponding to the top of the mountain. And 2
Each of the metal blocks 41, 44 has a hexagonal cross-sectional shape, and the laser chip 42,
45 is attached to these laser chips 14, 42, 44
Are arranged so as to be at the vertices of an equilateral triangle in the plane perpendicular to the optical axis. That is, the laser chips are mounted so that their installation angles differ from each other by 120 °. Also in this case, since the sub-mount 40 and the relay lead pin 20 are electrically connected in advance by the Au wire 17 due to the presence of the relay lead pin 20, the Cu ring 11 and the stem 12 are bonded and assembled to each other. Mount 4
Even after the gap between 0 and the metal blocks 41 and 44 becomes extremely narrow, the submount 40 and the lead pin 26 can be electrically connected.

[0016]

According to the present invention, the wavelength is 635 nm or 65.
Since the semiconductor laser chip of 0 nm and the semiconductor laser chip of wavelength 780 nm are housed in one package so that their installation angles are different from each other, the optical axes of both can be brought close to each other, and the semiconductor laser device of one package can be manufactured. A pickup for recording / reproducing a DVD and a CD-R with a single recording / reproducing apparatus can be made only by using it, and the pickup can be easily miniaturized and simplified.

[Brief description of drawings]

FIG. 1 is a top view of a semiconductor laser device of the present invention.

FIG. 2 is a three-dimensional view of a semiconductor laser device of the present invention.

FIG. 3 is a Cu ring and stem division view of the semiconductor laser device of the present invention.

FIG. 4 is a flow chart of a method for manufacturing a semiconductor laser device of the present invention.

FIG. 5 shows another embodiment of the semiconductor laser device of the present invention.

FIG. 6 is a three-dimensional view of a conventional semiconductor laser device.

FIG. 7 is a flowchart of a conventional method for manufacturing a semiconductor laser device.

FIG. 8 is a Cu ring and stem division diagram of a conventional semiconductor laser device.

[Explanation of symbols]

1, 11 Cu ring 2, 12 Stem 3 Semiconductor laser chip 4, 27 Optical output monitor photodiode 5, 6, 17, 18, 19, 25, 28, 43, 46
Au wire Wire 7, 8, 9, 21, 26, 29, 31, 47 Lead pin 10, 22, 23, 24, 30, 48 Insulation material 13, 40 Submount 14 Wavelength 635 nm or 650 nm Semiconductor laser chip 15, 41, 44 Metal block 16, 42 Wavelength 780nm Semiconductor chip 20 Relay lead pin

Claims (3)

(57) [Claims] 1. A semiconductor laser device in which a plurality of laser chips are mounted in one package at different installation angles.
And at least one laser chip and the laser chip and the electrical
Between at least one lead pin that electrically connects
The special feature is that a relay lead pin is provided at one of the
Semiconductor laser device to be considered. 2. A semiconductor laser device in which two laser chips are mounted with 180 ° different installation angles.
One of the two laser chips and the other
Between one of the laser chips and the lead pin for electrical connection
If a relay lead pin is installed at any electrical position of
And a semiconductor laser device. 3. The first laser chip is attached to a submount, the submount and relay lead pin are attached to a Cu ring, the submount and the relay lead pin are electrically connected, and then the Cu is attached. after assembling a stem fitted with a ring and the second, etc. another of the laser chip, wherein, characterized in that electrically connecting the lead pins of the relay lead pin and said first laser chip
Item 3. A method of manufacturing a semiconductor laser device according to item 1 or 2 .