JP3342322B2 - Method for manufacturing LED element display device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention
ght Emitting Diode; a method for manufacturing an LED display device including a light emitting diode (LED) device
The present invention relates to a method for manufacturing an LED display device having a feature in mounting a D element.

[0002]

2. Description of the Related Art LED elements are generally pn junction diodes, and some of them emit light of various colors depending on materials and manufacturing methods. By configuring display pixels using the LED elements of various emission colors, an LED display device for monochromatic display or color display is manufactured. The LED display device has a large display unit, that is, an LED element, as compared with other display devices such as a CRT (Cathode Ray Tube; CRT) or a liquid crystal, and is often used as a large screen display of 100 inches or more.

On the other hand, in order to manufacture a display device having a size of 100 inches or less and obtain a quality equal to or higher than that of a CRT or liquid crystal display device, that is, to obtain a quality such as pixel definition, brightness or contrast. In addition, it is necessary to reduce the size of the LED elements or to mount the LED elements densely. The LED element serving as a constituent pixel of the LED display device needs to have a size of, for example, 500 μm × 500 μm × 500 μm or less.

[0004] Regarding the mounting method, when the electrodes of the LED element are on both sides of the pn junction, usually, one electrode is fixedly connected with a conductive adhesive, and the other electrode is wire-bonded and mounted. Is done. An LED element having an electrode formed only on one side of a pn junction is mounted as follows.

FIG. 14A is a plan view showing the structure of an LED element 20 constituting a conventional LED display device.
FIG. 14B is a cross-sectional view taken along line AA of FIG. 14A. The LED element 20 includes an n-type layer 2 on a substrate 1.
Then, the p-type layer 3 is laminated in this order, a part of the n-type layer 2 and a part of the p-type layer 3 are removed by etching, and the n-type layer 2 is exposed. An electrode 5 is formed on the exposed n-type layer 2 and an electrode 6 is formed on the remaining p-type layer 3. The surfaces of the electrode 5 and the electrode 6 face the same side with respect to the substrate 1. I have.

FIG. 15 is a sectional view showing a mounting structure of the LED element 20 of FIG. 14 by wire bonding. LE
The electrode 5 and the electrode 6 of the D element 20 are arranged in the direction opposite to the direction facing the wiring board 7, and the electrode 5 and the electrode 6 are connected to the cathode electrode 9 and the anode electrode 10 of the wiring board 7.
Then, wire bonding is performed using an Au wire or the like.

FIG. 16 is a sectional view showing a mounting structure of the LED element 20 using the bumps 15 and 16. The bumps 15 and 16 are made of Au or the like, and are deposited on the electrodes 5 and 6 for each individual LED element 20 or bonded in a ball shape, and then the cathode electrode on the wiring board 7 is formed. 9 and the anode electrode 10. The connection is performed by applying an adhesive 13 made of an anisotropic conductive resin, an insulating resin, or the like to the gap and fixing it by pressing. The direction in which the LED elements 20 are arranged on the wiring board 7 is opposite to that in FIG. 15, and the bumps 15 and 16 are arranged so as to face the wiring board 7.

[0008]

In the mounting structure by wire bonding shown in FIG. 15, it is necessary to perform wire bonding for each LED element 20, which is inefficient in the manufacturing process of the LED display device. In addition, two wire bonds are required, which takes up a considerable amount of space, resulting in poor space utilization efficiency.

In the mounting structure in which the bumps 15 and 16 shown in FIG. 16 are interposed, wire bonding is unnecessary.
Although the space utilization efficiency is high, the thickness of the LED element 20 including the bumps 15 and 16, that is, the length from the bottom surface of the substrate 1 to the surfaces of the bumps 15 and 16 cannot be controlled with high accuracy. If this length cannot be controlled, reliable mounting is difficult. Further, even if an attempt is made to manufacture an LED display device using a plurality of the LED elements 20 of FIG.
If the thickness of the LED elements cannot be controlled, they cannot be mounted at the same time, and the manufacturing process is inefficient.

An object of the present invention is to provide a method of manufacturing an LED display device which can be manufactured efficiently with a simple configuration.

[0011]

[0012]

[0013]

[0014]

SUMMARY OF THE INVENTION According to the present invention, after forming a bonded n-type layer and a p-type layer on a substrate, a part of one of the layers is removed to expose each layer exposed on one side in the bonding direction. Forming an LED chip portion having a chip connection surface, forming an electrical insulation portion while leaving an upper space of a predetermined shape on each chip connection surface, and covering the electrical insulation portion and forming each of the chip connection surfaces. A step of filling the upper space above with a conductive resin and removing a part of the conductive resin on the electric insulating part to expose a part of the electric insulating part and form a connection electrode. Process and the substrate,
A method for manufacturing an LED display device, comprising: a step of forming a plurality of LED elements; and a step of connecting a connection electrode of each LED element so as to face a wiring on a wiring board.

[0015]

Further, the present invention is characterized in that the application of the conductive resin is performed by a printing method. According to the present invention, since the conductive resin is applied by a printing method, the accuracy of the thickness of the element which does not vary in the applied thickness is improved.

Further, according to the present invention, the p-type layer and the n-type layer are made of different materials, and the LED chips for emitting three colors of blue, red and green are individually formed. A connection electrode having the same element connection surface height is formed, and each LED element is formed and arranged on a wiring board. According to the present invention, three kinds of LED elements having different emission colors are formed by changing materials in various ways,
For all types, the height of the element connection surface is made equal. That is,
Although the thickness of the LED chip portion often differs depending on the difference in materials and the like, since the connection electrodes having the same height of the element connection surface are formed, the thickness of the element electrodes is adjusted accordingly. Therefore, the heights of the element connection surfaces of the three types of LED elements can be made uniform, a plurality of LED elements can be collectively connected to the wiring board, and an LED display device can be efficiently manufactured.

[0018]

DESCRIPTION OF THE PREFERRED EMBODIMENTS LED according to one embodiment of the present invention
A method of manufacturing a display device will be described with reference to FIGS. First, a method for manufacturing an LED element included in an LED display device and a structure thereof will be described with reference to FIGS. Among them, the blue LED element 5 will be described with reference to FIGS.
0 and the red LED element 90 will be described with reference to FIGS.
Will be described. Next, a method of manufacturing an LED display device by mounting LED elements and a structure thereof will be described with reference to FIGS.

Note that the LED display device of the present embodiment
It is composed of LED elements for emitting three colors of blue, red and green, and is capable of color display. For the green LED element,
The same structure as the blue LED element 50 may be used, or the red L
It may have the same structure as the ED element 90. The size of each LED element is, for example, about 300 μm × 300 μm × 300 μm.

(Blue LED Element) FIG. 1 is a sectional view showing a layer structure of a semiconductor wafer 30 used for manufacturing a blue LED element 50. The semiconductor wafer 30 has a GaN buffer layer 36, an n-type GaN layer 37 on a sapphire substrate 31,
n-type GaAlN layer 38, GaInN light-emitting layer 34, p-type G
The aAlN layer 39 and the p-type GaN layer 40 are laminated in this order, and the thickness is W1.

From now on, for simplicity of explanation,
GaN buffer layer 36, n-type GaN layer 37 and n-type G
The aAlN layer 38 is put together to form the n-type layer 32, and the p-type GaAs
The 1N layer 39 and the p-type GaN layer 40 are put together to form the p-type layer 3
3 is assumed. 2 to 13, similarly, the n-type layer 32
And only the p-type layer 33 is drawn, and the light-emitting layer 34 is the n-type layer 32
Since it is extremely thin compared to the p-type layer 33, the description is omitted.

FIGS. 2A to 2E are sectional views showing steps of manufacturing the blue LED element 50 using the semiconductor wafer 30. In FIG. 2A, a predetermined region of the semiconductor wafer 30 is removed by etching from the p-type layer 33 to the inside of the n-type layer 32 beyond the light-emitting layer 34 or by cutting with a diamond blade or the like. The chip connection surface 132 of the layer 32 is exposed, and the surface of the remaining p-type layer 33 is used as a chip connection surface 133. On the chip connecting surface 132, a chip electrode 45 of an ohmic metal thin film is formed by vapor deposition, and the chip connecting surface 1 is formed.
A chip electrode 46 of an ohmic metal thin film on 33
Is formed by vapor deposition. It is desirable that both electrodes have characteristics with as small an electric resistance as possible over the entire surface.

In FIG. 2B, the light emitting layer 34 or the bonding surface between the n-type layer 32 and the p-type layer 33 exposed on the cut surface in the stacking direction by the etching or the like in FIG. And an upper space 13 having a predetermined shape on the chip electrode 45.
4 and the upper space 1 having a predetermined shape on the chip electrode 46.
The electric insulating portion 43 is formed except for 35. Upper space 1
The height of the upper space 135 from the chip connection surface 133 is several tens μm. The electrical insulating portion 43 is a photo-curing type material, and is made of, for example, a paste resin obtained by appropriately kneading a photosensitive agent into a monomer such as epoxy acrylate. After a predetermined amount of such a resin is once printed and applied on the entire surface using a metal mask or the like, masking, exposure, and development are performed so that the upper space 134 and the upper space 135 having the above-described shapes remain. The electric insulating portion 43 is formed by photoetching. 2A and 2B, a part of the semiconductor wafer 30 is removed to form the chip electrode 45, the chip electrode 46, and the electrical insulating portion 43, thereby obtaining a semiconductor wafer 29.

In FIG. 2C, a conductive resin such as an Ag epoxy paste or an Au epoxy paste is printed so as to fill the upper space 134 and the upper space 135 of the semiconductor wafer 29 and further cover the electrical insulating portion 43. Applied. The applied conductive resin is cured by heating to form the conductive resin layer 44. At this time, since the warpage of the wafer may be induced to hinder the subsequent steps, the temperature may be reduced to 100 ° C.
The composition of the conductive resin is carefully selected so that it is sufficiently cured at about 120 ° C. and the heat shrinkage becomes as small as possible.

In FIG. 2D, a part of the conductive resin layer 44 on the electric insulating part 43 is cut with a diamond blade or the like to expose a part of the electric insulating part 43. That is, a half die is formed. By performing the half die, a part of the conductive resin layer 44 remaining on the chip electrode 45 is used as an element electrode 55, and one part of the conductive resin layer 44 remaining on the chip electrode 46 is formed. The portion is referred to as an element electrode 56. Here, the connection electrode 15 is formed by combining the chip electrode 45 and the device electrode 55.
5, and the connection electrode 156 is formed by combining the chip electrode 46 and the device electrode 56. The surface of the device electrode 55 is defined as the device connection surface 136, and the surface of the device electrode 56 is defined as the device connection surface 1.
37.

In FIG. 2E, a semiconductor wafer 29 in which the electrical insulating portion 43, the connection electrode 155, and the connection electrode 156 are formed is combined with a plurality of LED elements 50 by a full die.
Divided into The division is performed without cutting the p-type layer 33,
The cutting is performed so that a part of the electric insulating portion 43 is exposed on the cutting surface. The chip electrode 45 is electrically connected only to the element electrode 55, and the chip electrode 46 is electrically connected only to the element electrode 56.

In FIG. 2B, the chip connection surface 132
In addition, it is preferable that the area of the portion of the chip connection surface 133 that is not covered by the electrical insulating portion 43 is made as large as possible to secure the electrical characteristics of the element electrode 55 and the element electrode 56 formed thereon. However, on the other hand, FIG.
In the step (e), the device electrode 55 and the device electrode 56
Are electrically connected only to the chip electrode 45 and the chip electrode 46, respectively, so that the half dice is always performed while cutting the electrical insulating portion 43. As a result, the electric insulating portion 43 has a shape exposed to the cut end face, the area of the portion of the tip electrode 45 not covered by the electric insulating portion 43 is reduced to some extent, and the electric insulating portion having a size required for cutting is reduced. 43 is secured. The size of the electrical insulating portion 43 needs to be determined in consideration of the balance between the electrical characteristics of the element electrode and the cutting accuracy.

Regarding the coating thickness of the resin when forming the electric insulating portion 43, when the device electrode 55 and the device electrode 56 are separated by the half die shown in FIG. In order not to cut 33, it is necessary to consider the accuracy of the position of the diamond blade. For example, as described above, a coating thickness that is at least several tens of μm higher than the surface of the p-type layer 33 is required.

As shown in FIG. 2C, the length from the bottom surface of the substrate 31 to the element connection surface 136 is defined as the height W2 of the element connection surface 136. Similarly, the element connection surface 137
Is also W2. The application thickness of the conductive resin must be set so that the thickness of the LED element 50 matches W2. Further, it is desirable that the variation of the height W2 be within ± 10 μm. Thickness W1 of semiconductor wafer 30
Usually, there is a variation of about ± 30 μm depending on the place. However, if a conductive resin is applied by a screen printing method shown in FIG. 3 described later, this variation is absorbed and the accuracy of the element thickness is suppressed to ± 10 μm. .

FIGS. 3A to 3D are cross-sectional views showing a step of applying a conductive resin by a screen printing method, whereby the conductive resin layer 44 shown in FIG. 2C is formed. In FIG. 3A, the semiconductor wafer 29 shown in FIG.
Is fixed to the suction stage 66. In FIG. 3B, a metal mask 67 made of stainless steel or the like having an appropriate thickness is provided on the surface of the chip electrode 46 formed on the semiconductor wafer 29,
Alternatively, it is brought into contact with the electric insulating portion 43 to cover the same. A conductive resin block 44a such as an Ag epoxy paste is loaded as a predetermined amount of electrode material in one corner of the metal mask 67.

In FIG. 3C, a conductive resin is used by using a squeegee 68 made of a stainless steel blade or the like that can move parallel to the surface of the suction stage 66 on which the semiconductor wafer 29 is fixed by a height W2. Is printed on the semiconductor wafer 29 to form the conductive resin layer 44. Note that the distance between the suction stage 66 and the squeegee 68, that is, the variation in the squeegee height W2 is ±
It is realized with an accuracy of less than 10 μm. In FIG. 3D, the metal mask 67 is separated from the semiconductor wafer 29 and printing is completed.

The LED element 50 formed by the manufacturing method shown in FIGS. 2 and 3 has a structure as shown in FIGS. 4 and 5.

FIG. 4 is a perspective view showing the structure of the LED element 50, FIG. 5 (a) is a sectional view, FIG. 5 (b) is a plan view from the element electrode side, and FIG. () Is a bottom view as viewed from the substrate 31 side. Note that the cross-sectional view of FIG. 5A is a view taken along the line BB of FIG. 5B.

As shown in FIGS. 4, 5A and 5B, the device electrode 55 and the device electrode 56 are electrically insulated by the electric insulating portion 43. These two electrodes are both formed on one side of the substrate 31, and the height of the element connection surface 136 or the element connection surface 137 is W2. No electrode is formed on the bottom surface of the other side of the substrate 31 as shown in FIG.

According to the manufacturing method of FIGS. 2 and 3 described above, the connection electrode 155 and the connection electrode 1 such that the element connection surface 136 and the element connection surface 137 have the same height W2.
An LED element 50 having 56 can be formed.
In addition, since the plurality of LED elements 50 are obtained by being collectively formed on the semiconductor wafer 29 and then divided, the height of the element connection surfaces of all the LED elements 50 can be equal to W2.

(Red LED Element) FIG. 6 is a sectional view showing a layer structure of a semiconductor wafer 230 used for the red LED element 90. The semiconductor wafer 230 is configured by joining an n-type layer 32, an active layer 34, and a p-type layer 33 in this order, and has a total thickness of W3. The semiconductor wafer 30 of FIG.
The difference is that the constituent materials of each layer are different and the thickness is different,
The point is that the insulating sapphire substrate 31 does not exist.

FIGS. 7A to 7E are cross-sectional views showing a method of manufacturing the red LED element 90 using the semiconductor wafer 230. In FIGS. 7A and 7B, the semiconductor wafer 230 is formed similarly to FIGS. 2A and 2B.
Is partially removed by etching or the like, the chip electrode 45 and the chip electrode 46 are formed, and the electric insulating portion 43 is formed. In FIG. 7C, the height of the squeegee 68 is set to W2 and a conductive resin is applied to form the conductive resin layer 44 as in FIGS. 2C and 3. In FIGS. 7D and 7E, similarly to FIGS. 2D and 2E, part of the conductive resin layer 44 is removed, and the device electrode 55 and the device electrode 5 are removed.
6 is formed. The electric insulating portion 43 is formed on the semiconductor wafer 229.
And the connection electrode 155 and the connection electrode 156 are divided into a plurality of LED elements 90.

FIG. 8 shows the structure of the red LED element 90. FIG. 8A is a sectional view, FIG. 8B is a plan view seen from the element electrode side, and FIG. ) Indicates the n-type layer 32
It is the bottom view seen from the side. FIG. 8A is a view as seen from a cut line CC of FIG. 8B. These have the same structure as FIG. 5 except for the sapphire substrate 1.

According to the manufacturing method of FIG. 7, the thickness of the semiconductor wafer 230 becomes W3 as shown in FIG.
Although the thickness is often different from the thickness W1 of the semiconductor wafer 30 in FIG. 1, similarly to the blue LED element 50 in FIG. 2, the height of each of the element connection surface 136 and the element connection surface 137 is set to W2.
It can be.

(Green LED Element) Although the green LED element is not shown, as described above, the blue LED element 5
It has the same structure as the zero or red LED element 90. Although the thickness of the LED chip portion is often different due to different materials of each layer, the height of the squeegee 68 is set to W2 and the height of the element connection surface is set to W2
Align with Thus, the height of the element connection surface of the green LED element can be the same as the height W2 of the element connection surface of the blue LED element 50 and the red LED element 90.

(Mounting of LED elements) The blue LED element 50, the red LED element 90 and the green LED element thus manufactured are mounted as described below to obtain a color LED display device.

FIG. 9 shows a blue LED element 50 and a red LE.
FIG. 3 is a partial cross-sectional view showing a state where a D element 90 is mounted. The part that becomes the LED display device of the present embodiment includes the wiring board 77 in FIG. 9, the wirings 79 to 82 formed on the wiring board 77, and the LED elements connected to the wirings 79 and 80. 50, an LED element 90 connected to the wiring 81 and the wiring 82, and an adhesive 75.
The connection of each LED element to the wiring board 77 is a face-down type bonding, and the LED element 50 and the LED element 90 are bonded by an adhesive 75 such as an anisotropic conductive resin.
Is adhered to the wiring board 77. After this, the lower mold 7
A wiring board 77 on which the LED element 50 and the LED element 90 are mounted is mounted on the upper surface 2, and the upper die 73 is brought into contact with the wiring board 77, and is fixed by pressing and heating.

The lower mold 72 has a smooth mounting surface processed by Al or the like, and has a role of a heater for heating. Upper mold 73
Has a similarly smooth pressing surface, and a cushioning member 74 is provided on the pressing surface that contacts the LED element 50 and the LED element 90. The cushioning member 74 is made of a heat-resistant material such as silicon rubber, and has a thickness of several tens μm to several hundreds μm. If the variation of the thickness of each LED element is about ± 10 μm, the buffer 74 can absorb the variation and form a flat display surface.

As described above, the blue and red LED elements have the same thickness W2 and can be pressed simultaneously by being sandwiched between two parallel and flat molds. Although not shown, the green LED element can be pressed at the same time because the thickness W2 is the same. The same applies to a case where there are a plurality of LED elements of each color, and all the LED elements can be pressed at the same time.

Next, the LED of each color on the wiring board 77
The arrangement relationship of the elements will be described with reference to FIGS.

FIG. 10 is a view showing an arrangement relationship of each LED element.
FIG. 3 is a partial plan view of the ED display device. One blue LED element 50, one red LED element 90 and one green L
The ED element 100 forms one display pixel 95. These three types of LED elements are arranged in an L-shape, and one of the connection electrodes is commonly connected to the same wiring 94,
The other is connected to separate wiring 91, wiring 92 and wiring 93. The plurality of display pixels 95 are connected to the wiring substrate 7.
7 are arranged in a matrix. The wiring 8 in FIG.
The line 0 and the line 82 both correspond to the line 94, and the line 79 and the line 81 in FIG. 9 correspond to any of the lines 91 to 93, respectively.

FIG. 11 is a circuit diagram showing an electrical configuration of one display pixel 95. LED element 50, LED element 9
The cathode electrodes of the LED 0 and the LED element 100 are connected to a common wiring 94, and the anode electrodes are connected to separate wirings 91, 92 and 93. Thus, the display device has a simple configuration by sharing the wiring connected to one connection electrode of each LED element in one display pixel 95.

FIG. 12 is a plan view showing the display surface of the LED display device 200. One display pixel 95 is arranged at the position P of the cross in FIG.
2 × 16 display pixels are arranged.

FIG. 13 is a circuit diagram showing an electrical configuration of the LED display device 200. The X direction and the Y direction are two directions orthogonal to each other on the wiring board 77. 3 in X direction
Two display pixels and 16 display pixels are arranged in a matrix in the Y direction. The cathode electrodes of the LED elements in one row of display pixels 95 arranged in the X direction are all connected to one wiring 94 extending in the X direction, and the anode electrodes of the LED elements in one column of display pixels 95 arranged in the Y direction. Are connected to three wirings 91, 92 and 93, all extending in the Y direction.

In the present embodiment, the LED display device for displaying a color, which is composed of three color LED elements of blue, red and green, is shown, but the present invention is not limited to the combination of blue, red and green. Further, an LED display device including two-color LED elements or a single-color LED device may be used. In a two-color or three-color LED display device, the materials and the like of each LED element are different from each other and the thickness of each layer is often different from that of a single-color LED display device, but the heights of the element connection surfaces are all equal.

Although the semiconductor wafer 30 of FIG. 1 has a seven-layer structure, and the semiconductor wafer 230 of FIG. 6 has a three-layer structure by omitting it, the present invention is not limited to this.
3 may be used as long as it emits light.

Further, an LED having a structure other than the above-mentioned blue color
Examples of the material of the element and its emission color include the following. When the material of the n-type layer 32 / p-type layer 33 shown in the LED element 90 is GaP / GaP, the LED element emits red, yellow-green, or green light.
If GaP / GaAsP is used, the LED element emits red, orange, or yellow light. GaAlAs / GaAs
If it is 1As, it becomes an LED element that emits red light. However, only when GaAlAs / GaAlAs is used, L
The order is p-type layer 33 / n-type layer 32 of the ED element.

However, the present invention is not limited to this. One in which a p-type layer and an n-type layer are laminated on an insulating substrate, one in which a p-type layer is formed on an n-type substrate, and one in which an n-type layer is formed on a p-type substrate What is necessary is just to form a layer.

[0054]

As described above, according to the present invention, a plurality of L
The element connection surfaces of the ED elements can be accurately matched, all the LED elements can be mounted simultaneously and collectively, light can be efficiently extracted with a simple configuration, and the reliability of the device can be improved.

Further, according to the present invention, three kinds of LED elements having different emission colors are formed by changing the materials in various ways.
Even if the chip portions have different thicknesses, the heights of the element connection surfaces of the three types of LED elements can be made uniform by adjusting the thickness of the connection electrodes.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing a layer structure of a semiconductor wafer 30 used for a blue LED element 50.

FIG. 2 is a cross-sectional view showing a step of manufacturing the LED element 50 using the semiconductor wafer 30.

FIG. 3 is a cross-sectional view showing a step of applying a conductive resin by a screen printing method.

FIG. 4 is a perspective view of the LED element 50.

5A is a cross-sectional view showing the configuration of the LED element 50, FIG. 5B is a plan view seen from the element electrode side, and FIG. 5C is a view seen from the substrate 31 side. FIG.

FIG. 6 is a sectional view showing a layer structure of a semiconductor wafer 230 used for a red LED element 90.

FIG. 7 is a cross-sectional view illustrating a method of manufacturing the LED element 90 using the semiconductor wafer 230.

8 shows a structure of a red LED element 90, FIG. 8 (a) is a cross-sectional view, FIG. 8 (b) is a plan view seen from the element electrode side, and FIG. () Is a bottom view as seen from the n-type layer 32 side.

FIG. 9 shows a blue LED element 50 and a red LED element 90.
FIG. 4 is a cross-sectional view showing a state in which is mounted.

FIG. 10 is a plan view showing an arrangement relationship of LED elements on a wiring board 77.

FIG. 11 is a circuit diagram showing an electrical configuration of one display pixel 95.

FIG. 12 is a plan view showing a display surface of the LED display device 200.

FIG. 13 is a diagram showing a connection relationship between display pixels 95 and wiring of the LED display device 200.

FIG. 14A is a plan view showing the structure of a conventional LED element 20, and FIG. 10B is a sectional view.

FIG. 15 is a sectional view showing a mounting structure of the LED element 20 by wire bonding.

FIG. 16 shows bump 15 and bump 1 of LED element 20.
6 is a cross-sectional view showing a mounting structure according to No. 6.

[Explanation of symbols]

 REFERENCE SIGNS LIST 31 sapphire substrate 32 n-type layer 33 p-type layer 43 electrical insulating part 44 conductive resin layer 50, 90, 100 LED element 68 squeegee 77 wiring board 79 to 81, 92 to 94 wiring 132, 133 chip connection surface 134, 135 upper part Space 136,137 Device connection surface 155,156 Connection electrode W2 Height of device connection surface

Continuation of front page (58) Field surveyed (Int.Cl. ⁷ , DB name) H01L 33/00

Claims (3)

(57) [Claims] After forming a bonded n-type layer and a p-type layer on a substrate, a part of one of the layers is removed, and an LE having a chip connection surface of each layer exposed to one side in a bonding direction is provided.
A step of forming a D chip portion, a step of forming an electric insulating portion while leaving an upper space of a predetermined shape on each chip connecting surface, and a step of covering the electric insulating portion and forming the upper space on each of the chip connecting surfaces. Filling a conductive resin, removing a portion of the conductive resin on the electrical insulating portion to expose a portion of the electrical insulating portion, and forming a connection electrode; and dividing the substrate. Forming a plurality of LED elements; and connecting the connection electrodes of the respective LED elements so as to face the wiring on the wiring board. 2. The method for manufacturing an LED display device according to claim 1, wherein the application of the conductive resin is performed by a printing method. 3. The p-type layer and the n-type layer are made of different blue materials,
After individually forming LED chips for emitting three colors of red and green, connection electrodes having the same height of the element connection surface are formed on the chip connection surfaces of the LED chip portions, respectively.
2. The method according to claim 1, wherein an ED element is formed and arranged on a wiring board.