JP3225838B2 - High frequency dielectric composition - Google Patents
High frequency dielectric compositionInfo
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- JP3225838B2 JP3225838B2 JP10243196A JP10243196A JP3225838B2 JP 3225838 B2 JP3225838 B2 JP 3225838B2 JP 10243196 A JP10243196 A JP 10243196A JP 10243196 A JP10243196 A JP 10243196A JP 3225838 B2 JP3225838 B2 JP 3225838B2
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Description
【０００１】[0001]
【発明の属する技術分野】本発明は、高周波回路に使用
される素子を構成する誘電体として有効な高周波用誘電
体組成物に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-frequency dielectric composition effective as a dielectric constituting a device used in a high-frequency circuit.
【０００２】[0002]
【従来の技術】高周波回路に使用されるフィルタ等の部
品の小型・高信頼化には、多層デバイスが有効である。
この場合、多層デバイス用材料は、ある程度高い誘電率
（ε＝１０以上）、高いＱ（即ち、低い誘電損失）を示
し、ＣｕやＡｇ／Ｐｄ導体との同時焼成が必要であるこ
とから、１０００℃以下での焼成が可能であること（即
ち、１０００℃以下の焼成で十分に緻密化すること）が
必要とされる。2. Description of the Related Art Multilayer devices are effective for reducing the size and reliability of components such as filters used in high frequency circuits.
In this case, the material for a multilayer device exhibits a relatively high dielectric constant (ε = 10 or more) and a high Q (that is, low dielectric loss) to some extent, and requires co-firing with a Cu or Ag / Pd conductor. It is required that firing can be performed at a temperature of 100 ° C. or lower (that is, sufficient densification can be achieved by firing at 1000 ° C. or lower).
【０００３】従来、１０００℃以下の焼成が可能な高周
波用誘電体として ＢａＯ−Ａｌ2 Ｏ3 −Ｂ2 Ｏ3 −ＳｉＯ2 又はＢａ
Ｏ−ＳｒＯ−ＺｒＯ2−ＳｉＯ2 系ガラス材料 Ｐｂ含有ペロブスカイト系材料 Ｂｉ含有系材料 セラミックス−ガラス複合系材料 が開発され、使用されている。Conventionally, BaO—Al 2 O 3 —B 2 O 3 —SiO 2 or Ba has been used as a high frequency dielectric which can be fired at 1000 ° C. or lower.
O-SrO-ZrO 2 -SiO 2 -based glass materials Pb-containing perovskite-based material containing Bi-based material ceramics - glass composite materials have been developed and used.
【０００４】[0004]
【発明が解決しようとする課題】上記従来の材料では、
次のような問題点があった。即ち、Ｐｂ含有ペロブスカ
イト系やＢｉ含有系材料では、焼成中の成分揮発による
組成のズレが発生し、安定な製造が困難である。また、
ＢａＯ−Ａｌ2 Ｏ3 −Ｂ2 Ｏ3 −ＳｉＯ2 又はＢａＯ−
ＳｒＯ−ＺｒＯ2 −ＳｉＯ2 系ガラス材料やセラミック
ス−ガラス複合系材料では、比誘電率が、それぞれε＝
６，ε＝１５と低く、Ｑも１０００程度（１ＭＨｚ）と
比較的小さい。In the above-mentioned conventional materials,
There were the following problems. That is, in the case of a Pb-containing perovskite-based material or a Bi-containing-based material, a composition shift occurs due to volatilization of components during firing, and stable production is difficult. Also,
BaO-Al 2 O 3 -B 2 O 3 -SiO 2 or BaO-
In a SrO—ZrO 2 —SiO 2 glass material or a ceramic-glass composite material, the relative permittivity is ε =
6, .epsilon. = 15, and Q is relatively small, about 1000 (1 MHz).
【０００５】本発明は上記従来の問題点を解決し、高周
波回路に使用される素子の小型・高信頼化に有効な多層
デバイス用材料として有用な、誘電率及びＱが共に高
く、１０００℃以下での焼成が可能な高周波用誘電体組
成物を提供することを目的とする。The present invention solves the above-mentioned conventional problems, and is useful as a material for a multilayer device effective for miniaturization and high reliability of an element used in a high-frequency circuit. It is an object of the present invention to provide a high-frequency dielectric composition that can be fired at room temperature.
【０００６】[0006]
【課題を解決するための手段】本発明の高周波用誘電体
組成物は、Ｓｒｘ（Ｎｉ１／３Ｎｂ２／３）ｙＯ３（た
だし、ｘ／ｙ＝０．９６〜１．０６）を主成分とし、該
主成分に対し０．１〜５０重量％のガラスを添加した高
周波用誘電体組成物であって、該ガラスが下記組成のＭ
ｇＯ−ＢａＯ−Ｂ ２ Ｏ ３ −ＳｉＯ ２ 系ガラスであること
を特徴とする高周波用誘電体組成物。ＭｇＯ ：２０〜５０重量％ ＢａＯ ： ５〜２５重量％ Ｂ ２ Ｏ ３ ：１５〜３０重量％ ＳｉＯ ２ ：１０〜２５重量％ SUMMARY OF THE INVENTION The dielectric material for high frequency waves according to the present invention
The composition is Srx(Ni1/3Nb2/3)yO3(T
However, x / y = 0.96 to 1.06) as the main component,
0.1 to 50% by weight of glass was added to the main componentHigh
A dielectric composition for a frequency, wherein the glass has M
gO-BaO-B 2 O 3 -SiO 2 It is a system glassthing
A dielectric composition for high frequencies, characterized by the following.MgO: 20 to 50% by weight BaO: 5 to 25% by weight B 2 O 3 : 15 to 30% by weight SiO 2 : 10 to 25% by weight
【０００７】Ｓｒｘ（Ｎｉ１／３Ｎｂ２／３）ｙＯ３に
対し０．１〜５０重量％の特定組成のＭｇＯ−ＢａＯ−
Ｂ ２ Ｏ ３ −ＳｉＯ ２ 系ガラスを添加すると、Ｑ，εを低
下させることなく、１０００℃以下での焼成が可能とな
る。 MgO-BaO- having a specific composition of 0.1 to 50 % by weight based on Sr x (Ni 1/3 Nb 2/3 ) y O 3
The addition of B 2 O 3 -SiO 2 -based glass, Q, without reducing the epsilon, it is possible to firing at 1000 ° C. or less.
【０００８】なお、本発明において、誘電体組成物が窒
素雰囲気中で焼成される場合は、主成分のｘ／ｙ比を
０．９６〜１．０６とし、誘電体組成物が大気中で焼成
される場合は、主成分のｘ／ｙ比を０．９６〜１．０１
とするのが好ましい。In the present invention, when the dielectric composition is fired in a nitrogen atmosphere, the x / y ratio of the main component is set to 0.96 to 1.06, and the dielectric composition is fired in air. In this case, the x / y ratio of the main component is set to 0.96 to 1.01.
It is preferred that
【０００９】また、本発明において、特に、本発明の高
周波用誘電体組成物を多層デバイス用材料として用いる
場合は、前記主成分に対するガラス添加量を１〜４０重
量％とすることが望ましい。[0009] In the present invention, in particular, when using a high-frequency dielectric composition of the present invention a multilayer device for the material, it is desirable to 40 wt% of glass amount relative to the main component.
【００１０】[0010]
【発明の実施の形態】以下に本発明を詳細に説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail.
【００１１】本発明の高周波用誘電体組成物は、Ｓｒｘ
（Ｎｉ１／３Ｎｂ２／３）ｙＯ３（ただし、ｘ／ｙ＝
０．９６〜１．０６）を主成分とし、この主成分に対し
て特定組成のＭｇＯ−ＢａＯ−Ｂ ２ Ｏ ３ −ＳｉＯ ２ 系ガ
ラスを０．１〜５０重量％添加したものである。[0011] The dielectric composition for high frequency wave of the present invention comprises Sr x
(Ni 1/3 Nb 2/3 ) y O 3 (where x / y =
0.96 to 1.06) as a main component, and the MgO-BaO-B 2 O 3 -SiO 2 based glass <br/> lath having a specific composition with respect to the main component was added 0.1 to 50 wt% Things.
【００１２】本発明において、誘電体組成物を窒素雰囲
気中で焼成して用いる場合、主成分Ｓｒx （Ｎｉ1/3 Ｎ
ｂ2/3 ）y Ｏ3 のｘ／ｙ比は０．９６〜１．０６とす
る。この値が０．９６未満でも１．０６を超えても、得
られる誘電体のＱが著しく低下する。ただし、１．０６
を超える場合には、比誘電率の温度特性は上昇する。In the present invention, when the dielectric composition is used by firing in a nitrogen atmosphere, the main component Sr x (Ni 1/3 N) is used.
b 2/3 ) y O 3 The x / y ratio is 0.96 to 1.06. If this value is less than 0.96 or more than 1.06, the Q of the obtained dielectric material is significantly reduced. However, 1.06
When the temperature exceeds the range, the temperature characteristic of the relative permittivity increases.
【００１３】また、誘電体組成物を大気中で焼成して用
いる場合、主成分Ｓｒx （Ｎｉ1/3Ｎｂ2/3 ）y Ｏ3 の
ｘ／ｙ比は０．９６〜１．０１とする。この値が０．９
６未満でも１．０１を超えても、得られる誘電体のＱが
著しく低下する。ただし、１．０１を超える場合には、
比誘電率の温度特性は上昇する。When the dielectric composition is fired in the air and used, the x / y ratio of the main component Sr x (Ni 1/3 Nb 2/3 ) y O 3 is 0.96 to 1.01. I do. This value is 0.9
If the value is less than 6 or more than 1.01, the Q of the obtained dielectric material is significantly reduced. However, if it exceeds 1.01,
The temperature characteristic of the relative permittivity increases.
【００１４】本発明において、主成分に対するガラスの
添加量が０．１重量％未満では、１０００℃以下の焼成
で十分に緻密化することができず、Ｑが低いものとな
る。主成分に対するガラスの添加量が５０重量％を超え
ると相対的にＳｒx （Ｎｉ1/3Ｎｂ2/3 ）y Ｏ3 の含有
量が少なくなるために、誘電率及びＱが低下する。In the present invention, if the amount of glass added to the main component is less than 0.1% by weight, it is not possible to sufficiently densify by firing at 1000 ° C. or lower, and the Q becomes low. When the amount of glass added to the main component exceeds 50% by weight, the dielectric constant and Q decrease because the content of Sr x (Ni 1/3 Nb 2/3 ) y O 3 is relatively small.
【００１５】本発明においては、主成分に対するガラス
添加量を１〜４０重量％、特に２〜３０重量％とした場
合、誘電率及びＱが共に著しく高い高周波用誘電体組成
物を得ることができる。In the present invention, when the amount of glass added to the main component is 1 to 40% by weight, particularly 2 to 30% by weight, a dielectric composition for high frequency having both extremely high dielectric constant and Q can be obtained. .
【００１６】なお、本発明において、ガラスとしては、
ＭｇＯ−ＢａＯ−Ｂ２Ｏ３−ＳｉＯ２系ガラスを用い、
その組成割合は、下記の通りである。In the present invention, as the glass,
Using MgO-BaO-B 2 O 3 -SiO 2 based glass,
Set formed proportion of the Soviet Union, is as follows.
【００１７】ＭｇＯ−ＢａＯ−Ｂ2 Ｏ3 −ＳｉＯ2 系ガ
ラス組成（重量％） ＭｇＯ ：２０〜５０ ＢａＯ ： ５〜２５ Ｂ2 Ｏ3 ：１５〜３０ ＳｉＯ2 ：１０〜２５ 本発明の高周波用誘電体組成物は、Ｓｒx （Ｎｉ1/3 Ｎ
ｂ2/3 ）y Ｏ3 を構成する金属元素の酸化物又は炭酸
塩、例えば、ＳｒＣＯ3 ，ＮｉＯ及びＮｂ2 Ｏ5を、Ｓ
ｒx （Ｎｉ1/3 Ｎｂ2/3 ）y Ｏ3 組成比となるように混
合、仮焼して得られるＳｒx （Ｎｉ1/3 Ｎｂ2/3 ）y Ｏ
3 主成分に対して、所定割合のガラスを添加混合するこ
とにより容易に調製することができ、このような発明の
高周波用誘電体組成物は、適当なバインダを添加して成
形し、窒素雰囲気中又は大気中で１０００℃以下、例え
ば９５０〜９８０℃で焼成することにより、容易に使用
に供することができる。[0017] MgO-BaO-B 2 O 3 -SiO 2 based glass composition (wt%) MgO: 20~50 BaO: 5~25 B 2 O 3: 15~30 SiO 2: high frequency of 10 to 25 the invention The dielectric composition is Sr x (Ni 1/3 N
b 2/3 ) An oxide or carbonate of a metal element constituting y O 3 , for example, SrCO 3 , NiO and Nb 2 O 5
r x (Ni 1/3 Nb 2/3) mixed in a y O 3 composition ratio, Sr x (Ni 1/3 Nb 2/3 ) obtained by calcining y O
3 The main component can be easily prepared by adding and mixing a predetermined ratio of glass with respect to the main components. By baking at 1000 ° C. or lower, for example, at 950 to 980 ° C. in the air or in the air, it can be easily used.
【００１８】なお、窒素雰囲気中で焼成する場合には、
焼成に先立ち、大気中、５００〜６００℃で脱バインダ
処理する。When firing in a nitrogen atmosphere,
Prior to firing, a binder removal treatment is performed at 500 to 600 ° C. in the air.
【００１９】Ｓｒｘ（Ｎｉ１／３Ｎｂ２／３）ｙＯ３主
成分にＭｇＯ−ＢａＯ−Ｂ２Ｏ３−ＳｉＯ２系ガラスを
添加する場合、ガラス成分と同重量比の各酸化物又は相
当量の炭酸塩をＳｒｘ（Ｎｉ１／３Ｎｂ２／３）ｙＯ３
主成分に添加混合し、熱処理時にガラス化と焼成とを同
時に行っても良いが、予め製造したガラスフリットとし
て添加するのが望ましい。[0019] Sr x (Ni 1/3 Nb 2/3) y O 3 main component in the case of adding the M gO-BaO-B 2 O 3 -SiO 2 based glass, the oxides of the glass component in the same weight ratio Alternatively, a considerable amount of carbonate is converted to Sr x (Ni 1/3 Nb 2/3 ) y O 3
Vitrification and sintering may be performed simultaneously during the heat treatment by adding and mixing with the main component, but it is desirable to add as a glass frit manufactured in advance.
【００２０】[0020]
【実施例】以下に実施例を挙げて本発明をより具体的に
説明する。The present invention will be described more specifically with reference to the following examples.
【００２１】実施例１〜９，比較例１，２ ＳｒＣＯ3 ，ＮｉＯ及びＮｂ2 Ｏ5 をＳｒx （Ｎｉ1/3
Ｎｂ2/3 ）y Ｏ3 （ｘ／ｙ＝１）の化学量論比となるよ
うに秤量し、２−プロパノールを分散媒として、２４時
間ボールミルで粉砕・混合した後、乾燥し、その後、大
気中にて１３５０℃で４時間仮焼した。仮焼物を再度２
−プロパノールを分散媒として、２４時間ボールミルで
粉砕・混合し、Ｓｒ（Ｎｉ1/3 Ｎｂ2/3 ）Ｏ3 を合成し
た。Examples 1 to 9 and Comparative Examples 1 and 2 SrCO 3 , NiO and Nb 2 O 5 were converted to Sr x (Ni 1/3
Nb 2/3 ) y O 3 (x / y = 1), weighed so as to have a stoichiometric ratio, pulverized and mixed in a ball mill for 24 hours using 2-propanol as a dispersion medium, dried, and then dried. It was calcined at 1350 ° C. for 4 hours in the air. Re-calcinate 2
-Using propanol as a dispersion medium, pulverized and mixed with a ball mill for 24 hours to synthesize Sr (Ni 1/3 Nb 2/3 ) O 3 .
【００２２】得られたＳｒ（Ｎｉ1/3 Ｎｂ2/3 ）Ｏ3 に
ＭｇＯ−ＢａＯ−Ｂ2 Ｏ3 −ＳｉＯ2 系ガラス（成分重
量比ＭｇＯ：ＢａＯ：Ｂ2 Ｏ3 ：ＳｉＯ2 ＝４５：１
５：２５：１５）フリットを表１に示す割合で添加混合
し、バインダ（５重量％ポリビニルアルコール水溶液）
を混合物に対して２０〜３０重量％加えて、直径１５ｍ
ｍ、厚み１．５ｍｍのペレットに成形し、大気中にて９
８０℃で１時間焼成した。The obtained Sr (Ni 1/3 Nb 2/3 ) O 3 is mixed with MgO—BaO—B 2 O 3 —SiO 2 system glass (component weight ratio MgO: BaO: B 2 O 3 : SiO 2 = 45). : 1
5:25:15) A frit was added and mixed in a ratio shown in Table 1, and a binder (5% by weight aqueous polyvinyl alcohol solution) was added.
Is added to the mixture at 20 to 30% by weight, and the diameter is 15 m.
m, formed into pellets with a thickness of 1.5 mm.
It was baked at 80 ° C. for 1 hour.
【００２３】得られた試料について比誘電率ε，Ｑ及び
相対密度を測定し、結果を表１に示した。The relative permittivity ε, Q and relative density of the obtained sample were measured, and the results are shown in Table 1.
【００２４】なお、比誘電率はＹＨＰ社製「ＬＦインピ
ーダンスアナライザモデル４１９２Ａ」を用い、測定周
波数１ＭＨZ 、測定電圧０．５Ｖｒｍｓ、温度２５℃に
て測定した。また、ＱはＹＨＰ社製「Ｑメーターモデル
４３４２Ａ」を用い、測定周波数１ＭＨZ 、温度２５℃
にて測定した。[0024] The relative dielectric constant using YHP Co. "LF Impedance Analyzer Model 4192A", was determined measurement frequency 1 MH Z, measured voltage 0.5 Vrms, at a temperature 25 ° C.. In addition, Q is using the YHP Co., Ltd. "Q Meter model 4342A", measurement frequency 1MH Z, temperature 25 ℃
Was measured.
【００２５】[0025]
【表１】 [Table 1]
【００２６】表１より次のことが明らかである。The following is clear from Table 1.
【００２７】即ち、ガラス添加量が０．１重量％未満の
場合には（比較例１）、焼成温度９８０℃では緻密化せ
ず十分なＱ値が得られない。また、ガラス添加量が５０
重量％を超えると（比較例２）、Ｓｒ（Ｎｉ1/3 Ｎｂ
2/3 ）Ｏ3 分率低下のために十分なＱ，εが得られな
い。That is, when the amount of glass added is less than 0.1% by weight (Comparative Example 1), at a firing temperature of 980 ° C., no densification occurs and a sufficient Q value cannot be obtained. In addition, the glass addition amount is 50
If the content exceeds% by weight (Comparative Example 2), Sr (Ni 1/3 Nb)
2/3 ) Sufficient Q and ε cannot be obtained due to a decrease in the O 3 fraction.
【００２８】これに対して、ガラスを０．１〜５０重量
％添加したもの（実施例１〜９）、特に、１〜４０重量
％（実施例２〜８）、とりわけ２〜３０重量％添加した
もの（実施例３〜７）では、９８０℃の焼成で十分に緻
密化し、Ｑ，εが共に高いものとなっている。On the other hand, glass containing 0.1 to 50% by weight (Examples 1 to 9), particularly 1 to 40% by weight (Examples 2 to 8), particularly 2 to 30% by weight Those obtained (Examples 3 to 7) were sufficiently densified by firing at 980 ° C., and both Q and ε were high.
【００２９】実施例１０〜１３，比較例３〜５ ｘ／ｙの値が表２に示す値となるようにＳｒx （Ｎｉ
1/3 Ｎｂ2/3 ）y Ｏ3 を合成したこと以外は実施例５
（ただし、バインダ添加量２０重量％）と同様にしてペ
レットを成形し、同様に、大気中にて９８０℃で焼成し
た。Examples 10 to 13 and Comparative Examples 3 to 5 Sr x (Ni
Example 5 except that 1/3 Nb 2/3 ) y O 3 was synthesized.
Pellets were formed in the same manner as described above (however, the amount of the binder added was 20% by weight), and similarly fired at 980 ° C. in the air.
【００３０】得られた試料について、実施例１と同様に
して比誘電率ε及びＱを測定すると共に、比誘電率の温
度特性を調べ、結果を表２に示した。The relative permittivity ε and Q of the obtained sample were measured in the same manner as in Example 1, and the temperature characteristics of the relative permittivity were examined. The results are shown in Table 2.
【００３１】なお、比誘電率の温度特性は、２０℃及び
８５℃でそれぞれ測定した容量値Ｃ20，Ｃ85から下記式
より算した。The temperature characteristics of the relative permittivity were calculated from the capacitance values C 20 and C 85 measured at 20 ° C. and 85 ° C., respectively, according to the following equation.
【００３２】[0032]
【数１】 (Equation 1)
【００３３】[0033]
【表２】 [Table 2]
【００３４】表２より明らかなように、大気中で焼成す
る場合には、ｘ／ｙ＝０．９６〜１．０１であることが
必要とされる。As is clear from Table 2, when firing in the atmosphere, x / y = 0.96 to 1.01 is required.
【００３５】実施例１４〜１９，比較例６〜７ ｘ／ｙの値が表３に示す値となるようにＳｒx （Ｎｉ
1/3 Ｎｂ2/3 ）y Ｏ3 を合成したこと以外は実施例５
（ただし、バインダ添加量２０重量％）と同様にしてペ
レットを成形した。得られたペレットを大気中、６００
℃で４時間脱バインダ処理を行った後、窒素雰囲気中、
９８０℃で１時間焼成した。Examples 14 to 19 and Comparative Examples 6 and 7 Sr x (Ni
Example 5 except that 1/3 Nb 2/3 ) y O 3 was synthesized.
Pellets were formed in the same manner as described above (however, the amount of binder added was 20% by weight). The obtained pellets are placed in the atmosphere at 600
After performing the binder removal treatment at 4 ° C. for 4 hours, in a nitrogen atmosphere,
Baking was performed at 980 ° C. for 1 hour.
【００３６】得られた試料について、実施例１０と同様
にして比誘電率ε、Ｑ及び比誘電率の温度特性を調べ、
結果を表３に示した。With respect to the obtained sample, the temperature characteristics of the relative permittivity ε, Q and the relative permittivity were examined in the same manner as in Example 10.
The results are shown in Table 3.
【００３７】[0037]
【表３】 [Table 3]
【００３８】表３より明らかなように、窒素雰囲気中で
焼成する場合には、ｘ／ｙ＝０．９６〜１．０６である
ことが必要とされる。As apparent from Table 3, when firing in a nitrogen atmosphere, x / y = 0.96 to 1.06 is required.
【００３９】[0039]
【発明の効果】以上詳述した通り、本発明の高周波用誘
電体組成物は、Ｑ，εが共に高く、１０００℃以下での
焼成も可能である。このため、本発明によれば、高特性
多層デバイスを構成することにより、高周波回路に使用
される素子の小型・高信頼化を有効に達成することがで
きる。As described above in detail, the high frequency dielectric composition of the present invention has both high Q and ε, and can be fired at 1000 ° C. or lower. Therefore, according to the present invention, by configuring a high-performance multilayer device, it is possible to effectively achieve downsizing and high reliability of an element used in a high-frequency circuit.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 篠原 義典 埼玉県秩父郡横瀬町大字横瀬2270番地 三菱マテリアル株式会社電子技術研究所 内 (56)参考文献 特開 平３−153571（ＪＰ，Ａ) 特開 平１−123488（ＪＰ，Ａ) 特開 昭63−112461（ＪＰ，Ａ) 特開 昭63−112453（ＪＰ，Ａ) 特開 平５−211006（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) C04B 35/42 - 35/50 ＣＡ（ＳＴＮ) ＲＥＧＩＳＴＲＹ（ＳＴＮ)────────────────────────────────────────────────── ─── Continuing from the front page (72) Inventor Yoshinori Shinohara 2270 Yokoze, Yokoze-machi, Chichibu-gun, Saitama Prefecture Mitsubishi Materials Electronic Technology Research Laboratory (56) References JP-A-3-153571 (JP, A) JP-A-1-123488 (JP, A) JP-A-63-112461 (JP, A) JP-A-63-112453 (JP, A) JP-A-5-212100 (JP, A) (58) Int.Cl. 7 , DB name) C04B 35/42-35/50 CA (STN) REGISTRY (STN)
Claims (4)
（ただし、ｘ／ｙ＝０．９６〜１．０６）を主成分と
し、該主成分に対し０．１〜５０重量％のガラスを添加
した高周波用誘電体組成物であって、該ガラスが下記組
成のＭｇＯ−ＢａＯ−Ｂ ２ Ｏ ３ −ＳｉＯ ２ 系ガラスであ
ることを特徴とする高周波用誘電体組成物。ＭｇＯ ：２０〜５０重量％ ＢａＯ ： ５〜２５重量％ Ｂ ２ Ｏ ３ ：１５〜３０重量％ ＳｉＯ ２ ：１０〜２５重量％ 1. Srx(Ni1/3Nb2/3)yO3
(Where x / y = 0.96 to 1.06) as the main component
And adding 0.1 to 50% by weight of glass to the main component
didWhat is claimed is: 1. A high-frequency dielectric composition, comprising:
Original MgO-BaO-B 2 O 3 -SiO 2 Glass
ToA dielectric composition for a high frequency wave, comprising:MgO: 20 to 50% by weight BaO: 5 to 25% by weight B 2 O 3 : 15 to 30% by weight SiO 2 : 10 to 25% by weight
される誘電体組成物であって、主成分のｘ／ｙ比が０．
９６〜１．０６であることを特徴とする高周波用誘電体
組成物。2. A dielectric composition fired in a nitrogen atmosphere according to claim 1, wherein the x / y ratio of the main component is 0.1.
96. A dielectric composition for high frequencies, characterized by being 1.06 to 1.06.
誘電体組成物であって、主成分のｘ／ｙ比が０．９６〜
１．０１であることを特徴とする高周波用誘電体組成
物。3. The dielectric composition according to claim 1, wherein the x / y ratio of the main component is 0.96 or more.
1.01. A high frequency dielectric composition, which is 1.01.
物において、前記ガラスを前記主成分に対して１〜４０
重量％添加したことを特徴とする高周波用誘電体組成
物。4. A composition of any one of claims 1 to 3, before the Kiga lath to the main component 1-40
A high-frequency dielectric composition, characterized in that it is added by weight.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10243196A JP3225838B2 (en) | 1995-11-10 | 1996-04-24 | High frequency dielectric composition |
| TW085113434A TW416063B (en) | 1995-11-10 | 1996-11-04 | Dielectric composition for high frequency |
| US08/745,770 US5723396A (en) | 1995-11-10 | 1996-11-08 | Dielectric composition for high frequencies |
| KR1019960053034A KR100434004B1 (en) | 1995-11-10 | 1996-11-09 | High Frequency Dielectric Composition |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29275095 | 1995-11-10 | ||
| JP7-292750 | 1995-11-10 | ||
| JP10243196A JP3225838B2 (en) | 1995-11-10 | 1996-04-24 | High frequency dielectric composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09188563A JPH09188563A (en) | 1997-07-22 |
| JP3225838B2 true JP3225838B2 (en) | 2001-11-05 |
Family
ID=26443151
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10243196A Expired - Fee Related JP3225838B2 (en) | 1995-11-10 | 1996-04-24 | High frequency dielectric composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3225838B2 (en) |
-
1996
- 1996-04-24 JP JP10243196A patent/JP3225838B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH09188563A (en) | 1997-07-22 |
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