JP3210443B2 - Liquid crystal display - Google Patents
Liquid crystal displayInfo
- Publication number
- JP3210443B2 JP3210443B2 JP28221892A JP28221892A JP3210443B2 JP 3210443 B2 JP3210443 B2 JP 3210443B2 JP 28221892 A JP28221892 A JP 28221892A JP 28221892 A JP28221892 A JP 28221892A JP 3210443 B2 JP3210443 B2 JP 3210443B2
- Authority
- JP
- Japan
- Prior art keywords
- short
- substrate
- transparent electrode
- resistance
- circuit member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 22
- 239000000758 substrate Substances 0.000 claims description 50
- 239000000463 material Substances 0.000 claims description 15
- 239000003566 sealing material Substances 0.000 claims description 14
- 230000005611 electricity Effects 0.000 description 18
- 230000003068 static effect Effects 0.000 description 18
- 238000000034 method Methods 0.000 description 15
- 238000010586 diagram Methods 0.000 description 12
- 238000009826 distribution Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 210000004027 cell Anatomy 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 210000002858 crystal cell Anatomy 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- -1 oxynitride Chemical compound 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は液晶表示装置の構造に関
するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of a liquid crystal display device.
【0002】[0002]
【従来の技術】液晶表示装置は、基本的構造としては図
8に示した如く、複数の透明電極2の上に配向膜3を設
けた2枚のガラス基板1をシール材4を及びスペーサ
(図示せず)を介して対向させ、前記シール材4で囲ま
れた領域に液晶を注入した液晶セル体と、該液晶セル体
の外部に配置された偏光板等(図示せず)とを組み合わ
せて作成される。2. Description of the Related Art A liquid crystal display device has a basic structure as shown in FIG. 8 in which two glass substrates 1 provided with an alignment film 3 on a plurality of transparent electrodes 2 are provided with a sealing material 4 and a spacer ( (Not shown), a liquid crystal cell body in which liquid crystal is injected into a region surrounded by the sealing material 4, and a polarizing plate (not shown) arranged outside the liquid crystal cell body are combined. Created.
【0003】前記透明電極2及び前記配向膜3が形成さ
れた前記ガラス基板1は、より詳細には他の層を併せて
有する場合がある。即ち図9(a)は、前記透明電極2
と前記配向膜3の間に、絶縁層5が設けた例を示す構造
図で有る。また図9(b)は前記ガラス基板1上にカラ
ーフィルター8と遮光層7を設けるとともに、該カラー
フィルタ8及び遮光層7と、前記透明電極2の間に絶縁
層6を設けた例を示す構造図で有る。勿論図9(b)に
於いて、更に前記透明電極2と前記配向膜3の間に、前
記絶縁層5を有する構造も有り得るし、図9(a)、
(b)に示す以外の絶縁層が存在する場合も有り得る。The glass substrate 1 on which the transparent electrode 2 and the alignment film 3 are formed may have other layers in more detail. That is, FIG.
FIG. 2 is a structural diagram showing an example in which an insulating layer 5 is provided between the alignment layer 3 and the alignment film 3. FIG. 9B shows an example in which a color filter 8 and a light shielding layer 7 are provided on the glass substrate 1 and an insulating layer 6 is provided between the color filter 8 and the light shielding layer 7 and the transparent electrode 2. It is a structural drawing. Of course, in FIG. 9B, there may be a structure having the insulating layer 5 between the transparent electrode 2 and the alignment film 3, and FIG.
An insulating layer other than that shown in FIG.
【0004】これらの絶縁層5、6は、通常前記配向膜
3の平坦性を向上させる目的、又は各層間の絶縁を目的
として用いられる。[0004] These insulating layers 5 and 6 are usually used for the purpose of improving the flatness of the alignment film 3 or for insulating between layers.
【0005】上記例のような構造を有する液晶表示装置
において、しばしば問題となるのが静電気による電極破
壊や液晶の特性劣化である。静電気の問題は電極膜をエ
ッチング等により分離し電極を形成した後は常に発生す
るが、特に前記配向膜3のラビング処理時に多発しやす
い。 [0005] A liquid crystal display device having the structure as described above.
Is often a problem when the electrodes are broken due to static electricity.
This is breakage or deterioration of the characteristics of the liquid crystal. Electrostatic problems can damage the electrode film.
Always occurs after separating and forming electrodes by
However, it tends to occur frequently during the rubbing treatment of the alignment film 3 in particular.
No.
【0006】従来は、ラビング時の静電気対策として、
ラビング時に加湿する等、主にラビング環境の条件を整
える方法が用いられてきた。しかし静電気の問題はラビ
ング時のみでなく、その後の工程においても常に起こり
得る。例えばスペーサー散布時に静電気の不均一分布す
ると、スペーサーが異常分布してしまう。また偏光板接
着時等にやはり静電気が発生し、液晶のスレッショルド
電圧が変化してしまう。Conventionally, as a measure against static electricity during rubbing,
A method of adjusting the conditions of the rubbing environment, such as humidification during rubbing, has been mainly used. However, the problem of static electricity can always occur not only during rubbing but also in subsequent steps. For example, if the static electricity is unevenly distributed at the time of spraying the spacer, the spacer is abnormally distributed. In addition, static electricity is also generated when the polarizing plate is adhered, and the threshold voltage of the liquid crystal changes.
【0007】ごく最近では特開平4−204687号公
報(文献1とする)にあるように、同一基板上の前記複
数の透明電極2を非表示領域部分で、光等の外部エネル
ギーにより電気抵抗が変化する材料と接触させる方法、
あるいは前記シール材4に外部エネルギーにより電気抵
抗が変化する材料を含ませる方法が提案されている。[0007] Very recently, as is in the JP-A-4-204687 (the document 1), the transparency electrode 2 double <br/> number on the same substrate in the non-display area portion, such as light A method of contacting a material whose electrical resistance changes due to external energy,
Alternatively, a method has been proposed in which the sealing material 4 contains a material whose electric resistance changes due to external energy.
【0008】しかしながら上記文献1が提案する方法
は、外部エネルギーによって絶縁性が変化する材料を用
いるため、条件によっては静電気が帯電し、破壊に至ら
ないまでも種々不都合な結果を生じる恐れがある。また
文献1の実施例のごとく光により絶縁性が変化するよう
な材料を用いた場合には、液晶点灯時にはその材料部分
は遮光されていなければならず、パネルの点灯検査時等
に於いて極めて問題があった。このような不都合を避け
るためには複数の電極を高抵抗の短絡部材により常時短
絡する事が望ましく、そのような発明は特開昭62−6
5455号公報(文献2とする)に記載されている。し
かし文献1、文献2の実施例ではともに電極形成後に短
絡部材が設けられるため、その間に静電気が発生するよ
うな場合は効果がなかった。さらにまた、文献1、文献
2の発明は短絡個所が局部的であるため、瞬間的な静電
気の発生に対しては電荷の分布が不均一となり、短絡個
所から遠いところで高い電界を生じてしまう恐れもあっ
た。 [0008] However, the method proposed in the above-mentioned Document 1 uses a material whose insulating property changes due to external energy, so that static electricity is charged depending on conditions, leading to destruction.
If not, there may be various adverse consequences. Also
When a material whose insulating property is changed by light is used as in the embodiment of Document 1, the material must be shielded from light when the liquid crystal is turned on, which is extremely problematic in panel lighting inspection and the like. was there. Avoid such inconveniences
For this purpose, always shorten multiple electrodes with high-resistance short-circuit members.
It is desirable that such an invention be disclosed in Japanese Patent Application Laid-Open No. 62-6 / 1987.
No. 5455 (Reference 2). I
However, in the examples of References 1 and 2, both of the examples after the electrode formation are short.
Since the entanglement member is provided, static electricity is generated during that time.
In no case, there was no effect. Furthermore, Reference 1, Reference
In the second invention, since the short-circuit portion is localized, instantaneous electrostatic
The distribution of charge becomes uneven against the generation of
There is a possibility that a high electric field may be generated far from the place.
Was.
【0009】[0009]
【発明が解決しようとする課題】そこで本発明の目的は
外部条件によらず、静電気の問題が起きにくい液晶表示
装置を提供する事にある。SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a liquid crystal display device in which the problem of static electricity hardly occurs regardless of external conditions.
【0010】[0010]
【課題を解決するための手段】課題を解決するために本
発明が用いる第1の手段は、同一基板1上の複数の前記
透明電極2を高抵抗の短絡部材9により常時短絡する事
であり、第2の手段は対向して組み合わせる2枚の基板
1上のそれぞれの透明電極2間を前記シール材4又は短
絡部材10を介し、高抵抗をもって常時短絡する事であ
り、第3の手段は前記短絡部材9を前記透明電極2より
も、より前記基板1に近い階層に設ける事であり、第4
の手段は前記短絡部材9を該基板1のほぼ全面を覆う透
明層とする事であり、第5の手段は前記短絡部材9を前
記透明電極2を形成する下記透明電極層12の一部とす
る事であり、第6の手段は前記短絡部材9を絶縁性を下
げた前記基板1そのものとする事である。 A first means used by the present invention to solve the problem is that a plurality of the transparent electrodes 2 on the same substrate 1 are always short-circuited by a high-resistance short-circuit member 9. , second means via respective transparent electrodes wherein between second sealing material 4, or short-circuit member 10 on the two substrates 1 to be combined so as to face, a short circuit at all times with a high-resistance Kotodea
Third means is to move the short-circuit member 9 from the transparent electrode 2
Is also provided at a level closer to the substrate 1,
Means for covering the short-circuit member 9 with a transparent material covering almost the entire surface of the substrate 1.
The fifth means is to place the short-circuit member 9 in front.
A part of the following transparent electrode layer 12 forming the transparent electrode 2
The sixth means is to make the short-circuit member 9 lower in insulating property.
The substrate 1 itself.
【0011】[0011]
【作用】前記第1の手段によれば、前記配向膜3をラビ
ング処理しても、同一基板1上の複数の透明電極2の間
は、前記短絡部材9によって短絡されるため、近接する
透明電極2間の電荷分布が均一となり、静電気放電が起
きないし、また前記第2の手段によれば、対向して組み
合わせた2枚の基板1上のそれぞれの透明電極2間は前
記シール材4又は短絡部材10を介し、高抵抗をもって
常時短絡するため、その後の工程内に於ける取り扱いに
特別な注意を払わなくても静電気による問題を発生させ
る事がない。前記第3の手段によれば、透明電極2が形
成された時点で既にこれらの複数の透明電極2が高抵抗
で短絡されている事になり、静電気問題は大幅に改善さ
れる。第4の手段によれば急速な静電気の発生に対して
も各透明電極2間に不均一な電荷分布が生じないため、
さらに安全性が向上する。第5の手段によれば前記短絡
部材9は前記透明電極2の形成時に同時に作成されるた
め、工程が簡略化される。第6の手段によれば前記短絡
部材9を設ける特別な工程が不要になる。 SUMMARY OF] According to the first means, even when rubbed the alignment layer 3, between a plurality of transparent electrodes 2 on the same substrate 1 will be short-circuited by the short-circuit member 9, transparent to near charge distribution between the electrodes 2 becomes uniform, do not occur electrostatic discharge, and in accordance with the second means, between each of the transparent electrodes 2 on the two substrates that combine to oppose 1 the sealing material 4 also It is via a short-junction material 10, in order to short-circuit all the time have a high resistance, it is not possible to generate the problems caused by static electricity is also not have to pay special attention to the treatment of Ri taken in in the subsequent steps. According to the third means, the transparent electrode 2 has a shape.
When formed, these transparent electrodes 2 already have high resistance.
Short circuit, and the static electricity problem is greatly improved.
It is. According to the fourth means, rapid generation of static electricity
Also, since non-uniform charge distribution does not occur between the transparent electrodes 2,
Further, safety is improved. According to the fifth means, the short circuit
The member 9 is formed at the same time when the transparent electrode 2 is formed.
Therefore, the process is simplified. According to the sixth means, the short circuit
A special process for providing the member 9 is not required.
【0012】[0012]
【実施例】図1は本発明の第1の実施例を示す構造図で
あり、前記複数の透明電極2と前記基板1との間に、該
複数の透明電極2に接触するように、適当に絶縁性を低
下させた材料(以下簡単のため低絶縁材料と称する)に
よる短絡部材9を前記基板1の全面に設けた2枚の基板
を、シール材4により張り合わせた例を示す構造図であ
る。FIG. 1 is a structural view showing a first embodiment of the present invention, wherein a plurality of transparent electrodes 2 are provided between the substrate 1 and the plurality of transparent electrodes 2 so as to be in contact with the plurality of transparent electrodes 2. FIG. 2 is a structural diagram showing an example in which two substrates having a short-circuit member 9 made of a material having a reduced insulation property (hereinafter referred to as a low-insulation material for simplicity) are provided on the entire surface of the substrate 1 with a sealing material 4 is there.
【0013】表示装置の仕様によっては一方の基板1に
関しては該基板1内での静電気の問題が皆無であり、特
に短絡部材9を設ける必要がない場合もある。図2は本
発明の第2の実施例であり、一方の基板1に関して静電
気の問題が軽微である場合に於いて、前記短絡部材9を
該基板1の全面に設けるのではなく、選択的に設けた例
である。 Depending on the specifications of the display device, one of the substrates 1
There is no problem of static electricity in the substrate 1.
There is a case where it is not necessary to provide the short-circuiting member 9 in the first embodiment. Figure 2 is a book
This is a second embodiment of the present invention, in which an electrostatic force is applied to one substrate 1.
In the case where the problem of the air is minor,
An example in which the substrate 1 is not provided on the entire surface but is selectively provided.
It is.
【0014】図1、図2に於いて、前記シール材4は低
絶縁材料、あるいは異方性導伝シール材を用いる事が出
来る。この場合、2枚の基板上のそれぞれの前記透明電
極1は相互に高抵抗で接続される事になる。In FIG. 1 and FIG. 2, as the sealing material 4, a low insulating material or an anisotropic conductive sealing material can be used. In this case, the transparent electrodes 1 on the two substrates are connected to each other with high resistance.
【0015】図3は本発明の第3の実施例を示す構造図
であり、前記複数の透明電極2と前記基板1との間に、
該複数の透明電極2に接触するように短絡部材9を設
け、更にシール材4の外側に於いて一方の基板1上の前
記短絡部材9と他方の基板1上の前記短絡部材9を、短
絡部材10により短絡した例を示す構造図である。FIG. 3 is a structural view showing a third embodiment of the present invention, wherein a plurality of transparent electrodes 2 and the substrate 1
The provided circuit member 9 so as to be in contact with the transparent electrodes 2 of the plurality of further said shorting member 9 and the other of said short-circuit member 9 on the substrate 1 on one substrate 1 at the outer side of the sealing member 4, a short circuit FIG. 3 is a structural diagram showing an example in which a short circuit occurs due to a member 10.
【0016】図3においては前記短絡部材10は前記シ
ール材4とは異なり、封止する目的はないから、前記基
板1の全周に渡って設ける必要はない。従って例えばシ
ール材外側の適当な位置に前記の高抵抗の短絡部材9の
一部を延長して露出する構造とすれば、前記短絡部材1
0として良導電性の材料(例えば導電性接着剤、導電ゴ
ム、金属等)を用いる事が出来、しかも前記シール材4
は本来の目的だけに合わせて最良の特性の材料を用いる
事が出来るため、製造上も都合が良い。勿論この場合に
短絡部材10が良導電性である事を限定するものではな
い。 [0016] The short-circuit member 10 in FIG. 3 is different from the sheet <br/> Lumpur material 4, since the purpose is not to seal, the group
It is not necessary to provide it all around the board 1. Therefore, for example,
Of the high-resistance short-circuit member 9 at an appropriate position outside the
If the structure is such that a part is extended and exposed, the short-circuit member 1
0 is a good conductive material (for example, conductive adhesive, conductive resin)
Metal, metal, etc.) and the sealing material 4
Uses materials with the best properties for their intended purpose only
Because it can do things, it is convenient in manufacturing. Of course in this case
It does not limit that the short-circuit member 10 has good conductivity.
No.
【0017】図4は本発明の第4の実施例であり、前記
短絡部材9の作成工程の一例を示す工程図でる。図4
(a)に於いて、前記基板1に前記高抵抗の短絡部材9
を一様に設け、更にその上に透明電極2を形成するため
の透明電極層12を設ける。次に図4(b)に示す如
く、前記透明電極層12をエッチング等で処理し、前記
透明電極2を形成し、その上に前記配向膜3が設けられ
る。この様に構成すれば、該配向膜3をラビング処理し
ても、複数の透明電極2の間は、前記短絡部材9の層に
よって高抵抗をもって短絡されるため、各透明電極間の
電荷分布が均一となり、静電気放電が起きない。FIG. 4 shows a fourth embodiment of the present invention, and is a process diagram showing an example of a process for forming the short-circuit member 9. As shown in FIG. FIG.
2A, the high-resistance short-circuit member 9 is provided on the substrate 1.
And a transparent electrode layer 12 for forming the transparent electrode 2 is further provided thereon. Next, as shown in FIG. 4B, the transparent electrode layer 12 is processed by etching or the like to form the transparent electrode 2, on which the alignment film 3 is provided. With this configuration, even if the alignment film 3 is rubbed, the plurality of transparent electrodes 2 are short-circuited with high resistance by the layer of the short-circuit member 9, so that the charge distribution between the transparent electrodes is reduced. Uniform and no electrostatic discharge occurs.
【0018】図5は本発明の第5の実施例であり、前記
短絡部材9の作成工程の一例を示す工程図である。図5
(a)に於いて、前記基板1に透明電極2を形成するた
めの透明電極層12を設ける。次に図5(b)に示す如
く、前記透明電極層12をエッチング等で処理して前記
透明電極2を形成するに際し、該透明電極2を完全には
分離せず、各透明電極2間に極く薄い透明電極層が残る
ように処理する。該薄い透明電極層は高抵抗部分19と
なり前記短絡部材9として機能する。この構造の上に前
記配向膜3が設けられる。この様に構成すれば、該配向
膜3をラビング処理しても、複数の透明電極2の間は、
前記高抵抗部分19によって短絡されているため、各透
明電極2間の電荷分布が均一となり、静電気放電が起き
ない。FIG. 5 shows a fifth embodiment of the present invention, and is a process diagram showing an example of a process for producing the short-circuit member 9. As shown in FIG. FIG.
1A, a transparent electrode layer 12 for forming a transparent electrode 2 is provided on the substrate 1. FIG. Next, as shown in FIG. 5 (b), the said transparent electrode layer 12 was treated by etching or the like
When forming the transparent electrode 2, the transparent electrode 2 is completely
Without separation, a very thin transparent electrode layer remains between each transparent electrode 2
Process as follows. The thin transparent electrode layer has a high resistance portion 19
And functions as the short-circuit member 9. The alignment film 3 is provided on this structure . With such a configuration, even if the alignment film 3 is subjected to the rubbing treatment, the gap between the plurality of transparent electrodes 2
Because it is short-circuited by the high resistance portion 19, KakuToru
The charge distribution between the bright electrodes 2 becomes uniform, and no electrostatic discharge occurs.
【0019】図5の実施例の場合、前記透明電極2のシ
ート抵抗raは出来るだけ小さい事が望ましく、一方前
記高抵抗部分19のシート抵抗rbはraの少なくとも
100倍以上の値が必要である。従って該高抵抗部分1
9の膜厚は極めて薄くなる可能性があるが、例えば前記
透明電極層12をスパッタリングで生成した場合、該透
明電極層12と前記ガラス基板1との界面付近では該透
明電極層12のエッチングレートは極端に低下するた
め、エッチング条件を適宜選択すれば、充分薄い高抵抗
部分19を残す事が出来る。In the embodiment of FIG. 5, the sheet resistance ra of the transparent electrode 2 is desirably as small as possible, while the sheet resistance rb of the high-resistance portion 19 needs to be at least 100 times as large as ra. . Therefore, the high resistance portion 1
9 may be extremely thin. For example, when the transparent electrode layer 12 is formed by sputtering, the etching rate of the transparent electrode layer 12 near the interface between the transparent electrode layer 12 and the glass substrate 1 is increased. Is extremely reduced, so that a sufficiently thin high resistance portion 19 can be left if the etching conditions are appropriately selected.
【0020】更に前記透明電極層12を生成する際に、
前記基板1の表面付近では抵抗比が高く、それ以外の部
分では抵抗比が低く成るように時間的に成分制御を行え
ば、前記高抵抗部分19の厚みを極端に薄くしなくても
済む。Further, when the transparent electrode layer 12 is formed,
By temporally controlling the components so that the resistance ratio is high near the surface of the substrate 1 and low in other parts, the thickness of the high resistance portion 19 does not need to be extremely thin.
【0021】前記高抵抗部分19は元々は前記透明電極
層12の一部であるが、前記透明電極2とは異なる、高
抵抗の短絡部材9と見なす事が出来る。The high-resistance portion 19 is originally a part of the transparent electrode layer 12, but can be regarded as a high-resistance short-circuit member 9 different from the transparent electrode 2.
【0022】図6は本発明の第6の実施例であり、前記
短絡部材9の作成工程の一例を示す工程図でる。図6
(a)に於いて、前記基板1に前記透明電極2を形成す
るための透明電極層12を設け、これをエッチング等で
処理して前記透明電極層2を形成する。この上に前記高
抵抗の短絡部材9の層を一様に設け、更にその上に前記
配向膜3が設けられる。この場合、該短絡部材9が基板
1のほぼ全面を覆うので、当然に該短絡部材9の層は透
明層でなければならない。この透明層は前記透明電極層
12を設ける時と同様の方法で、生成条件を変える事に
より作成する事が出来る。ただしこの場合は前記第3の
手段は用いない事になり、前記透明電極2を形成した
後、短絡部材9の層を設けるまでの取り扱いは注意を要
する。この点は下記図7(a)の実施例についても同様
である。 FIG. 6 shows a sixth embodiment of the present invention and is a process diagram showing an example of a process for forming the short-circuit member 9. As shown in FIG. FIG.
1A, a transparent electrode layer 12 for forming the transparent electrode 2 is provided on the substrate 1, and the transparent electrode layer 12 is formed by etching or the like. A layer of the high-resistance short-circuit member 9 is uniformly provided thereon, and the alignment film 3 is further provided thereon. In this case, the short-circuit member 9 is
1 covers almost the entire surface, so that the layer of the short-circuit member 9 is naturally transparent.
It must be a clear layer. This transparent layer is the transparent electrode layer
By changing the generation conditions in the same way as when providing 12
You can create more. However, in this case, the third
No means was used, and the transparent electrode 2 was formed.
After that, care must be taken in handling until the layer of the short-circuit member 9 is provided.
I do. This point is the same in the embodiment of FIG.
It is.
【0023】図7は本発明の第7の実施例であり、図7
(a)は前記第6の実施例を図9(b)に示した、前記
カラーフィルター8を有する基板1に適用した例を示す
構造図であり、前記短絡部材9は前記透明電極2と前記
配向膜3の間に設けられる。また図7(b)は前記第4
の実施例を図9(b)に示した、前記カラーフィルター
8を有する基板1に適用した例を示す構造図であり、前
記短絡部材9は前記絶縁層6と前記透明電極2の間に設
けられる。FIG. 7 shows a seventh embodiment of the present invention.
FIG. 9A is a structural view showing an example in which the sixth embodiment is applied to the substrate 1 having the color filter 8 shown in FIG. 9B, wherein the short-circuit member 9 is provided between the transparent electrode 2 and the transparent electrode 2. It is provided between the alignment films 3. FIG. 7B shows the fourth embodiment.
9B is a structural view showing an example in which the embodiment of FIG. 9 is applied to the substrate 1 having the color filter 8 shown in FIG. 9B, wherein the short-circuit member 9 is provided between the insulating layer 6 and the transparent electrode 2. Can be
【0024】本発明は、上に述べた実施例に限定される
ものではなく、例えば図9(a)に於ける前記絶縁層5
あるいは図9(b)に於ける前記絶縁層6を、高絶縁層
に替えて低絶縁層(低絶縁材料による層。以下同じ)と
する事によっても実施できる。また図1、図3、図4に
示した実施例に於いては、前記基板1の材料によって、
あるいは該基板1の表面を処理する事によって、該基板
1そのものを短絡部材9として用いる事もできる。The present invention is not limited to the embodiment described above. For example, the insulating layer 5 shown in FIG.
Alternatively, it can be implemented by replacing the insulating layer 6 in FIG. 9B with a high insulating layer and using a low insulating layer (a layer made of a low insulating material; the same applies hereinafter). In the embodiment shown in FIGS. 1, 3 and 4, depending on the material of the substrate 1,
Alternatively, by treating the surface of the substrate 1, the substrate 1 itself can be used as the short-circuit member 9.
【0025】本発明は、前記の複数の課題を解決するた
めの手段の全てを同時に実施する事に限定しない。例え
ば前記第1の手段と第3の手段に係る前記短絡部材9
は、前記第4の手段に関しては基板1の全面に設けても
良いし選択的に設けても良い。前記短絡部材9を、基板
1の一部分に選択的に設ける場合には、表示部分を除く
部分に設ける事が出来、該短絡部材9は必ずしも透明で
無くても良い。前記短絡部材9を表示部分にも設ける場
合は、該短絡部材9は透明で無ければならない。The present invention has been made to solve the above-mentioned problems.
It is not limited to performing all of the measures simultaneously. example
For example, the short-circuit member 9 according to the first means and the third means
It may only set the selection択的may be provided on the entire surface of the substrate 1 with respect to the fourth means. When the short-circuit member 9 is selectively provided on a part of the substrate 1, the short-circuit member 9 can be provided on a portion other than the display portion, and the short-circuit member 9 does not necessarily have to be transparent. When the short-circuit member 9 is provided also in the display portion, the short-circuit member 9 must be transparent.
【0026】前記短絡部材9は有機、無機を問わず種々
の材料を選択する事が出来、例えばインジュームオキサ
イドの他、シリコンオキサイド、シリコンナイトライ
ド、オキシナイトライド、タンタルオキサイド、アルミ
ニュームオキサイド、等も用いる事が出来る。The short-circuit member 9 can be selected from various materials regardless of whether it is organic or inorganic. For example, in addition to indium oxide, silicon oxide, silicon nitride, oxynitride, tantalum oxide, aluminum oxide, etc. Can also be used.
【0027】前記短絡部材9の材料を前記透明電極2と
同種の材料とする場合は、前記透明電極2を形成する部
分と、成分あるいは成分比、その他の形成条件を変え
て、エッチグレ−トやシート抵抗を変えるようにする事
が出来る。例えば前記透明電極2と前記短絡部材9をと
もにITO(インジュームティンオキサイド)で形成す
る場合、蒸着時あるいはスパッタ時の酸素量、錫量の割
合、その他の形成条件を変える事により両者のエッチン
グレート、及び比抵抗を変化させる事が出来る。また前
記図5に示した実施例の場合は、前述の如く前記透明電
極層12を生成する際に、前記基板1の表面付近では抵
抗比が高く、それ以外の部分では抵抗比が低く成るよう
に時間的に形成条件を変化させる事が出来る。[0027] When said shorting material material of the transparent electrode 2 and the same type of member 9, by changing a portion for forming the transparent electrode 2, components or component ratio, and other formation conditions, Etchigure - DOO Ya Change the sheet resistance
Can be done. For example, when both the transparent electrode 2 and the short-circuit member 9 are formed of ITO (indium tin oxide), the etching rates of the two can be changed by changing the ratio of the amount of oxygen and the amount of tin during vapor deposition or sputtering and other forming conditions. , And specific resistance can be changed. In the case of the embodiment shown in FIG. 5, when the transparent electrode layer 12 is formed as described above, the resistance ratio is high near the surface of the substrate 1 and low in other portions. The formation conditions can be changed over time.
【0028】ところで前記短絡部材9のシート抵抗とし
てどの程度の値を取るべきかとの問題があるが、該シー
ト抵抗の目安として、隣合う2本の透明電極間の短絡抵
抗を考える事が出来る。この短絡抵抗は、液晶駆動回路
の出力抵抗よりも充分大きくなければならず、また隣接
する電極間の容量と該短絡抵抗とで形成される時定数
は、静電気を短時間に分散させるため、あまり大きくて
もならない。該短絡抵抗があまりに大であれば局部的に
発生した静電気を効果的に分散する事ができなくなる
し、また余りに小さい値では複数の前記透明電極2の間
で過大な電流が流れ、単に表示装置の消費電力を増大さ
せるだけでなく、駆動波形に歪みを生じさせ、表示品質
の低下を招く恐れがある。There is a problem as to what value the sheet resistance of the short-circuit member 9 should take, but a short-circuit resistance between two adjacent transparent electrodes can be considered as a guide of the sheet resistance. This short-circuit resistance must be sufficiently larger than the output resistance of the liquid crystal drive circuit, and the time constant formed by the capacitance between adjacent electrodes and the short-circuit resistance disperses static electricity in a short time. Don't be too big. If the short-circuit resistance is too large, it is impossible to effectively disperse the locally generated static electricity. If the short-circuit resistance is too small, an excessive current flows between the plurality of transparent electrodes 2 and the display device is simply Not only increases the power consumption, but also causes distortion in the drive waveform, which may cause a decrease in display quality.
【0029】該短絡抵抗の大きさは、前記液晶駆動回路
の出力抵抗の大きさや、液晶表示装置の大きさによって
選択すべき範囲が異なって来るが、種々の場合を総合し
て目安を設けるならば、前記隣合う2本の透明電極間の
短絡抵抗短の値は10キロオーム以上、10ギガオーム
以下の範囲、望ましくは数100キロオームから数10
0メグオームの範囲に入るようにするのがよいだろう。The range to be selected depends on the size of the output resistance of the liquid crystal driving circuit and the size of the liquid crystal display device. For example, the value of short-circuit resistance between the two adjacent transparent electrodes is in a range from 10 kΩ to 10 gΩ, preferably from several hundred kΩ to several tens of kΩ.
It would be better to be in the range of 0 megohms.
【0030】本発明に於いて前記高抵抗の短絡部材9
は、前記文献1の場合とは異なり、基本的には外部エネ
ルギーにより電気抵抗が変化しない材料で作成される。
なお、1枚の基板1上に多数個のセルを同時に作り込む
場合にあっては、それぞれのセル内で複数の電極間を短
絡すると共に、それぞれ異なるセルの電極間をも短絡し
ておく方が良い。本発明の第4の手段によれば、前記短
絡部材9は基板1全面に形成する事が出来るから、異な
るセルの電極間を短絡することも容易に行える。この場
合も本願の、基板1上の複数の電極2間を高抵抗の短絡
部材9により短絡した構造に含む。In the present invention, the high-resistance short-circuit member 9 is used.
Is basically made of a material whose electric resistance does not change due to external energy, unlike the case of the aforementioned document 1 .
When a large number of cells are simultaneously formed on one substrate 1 , it is preferable to short-circuit a plurality of electrodes in each cell and also short-circuit the electrodes of different cells. Is good. According to the fourth means of the present invention, since the short-circuit member 9 can be formed on the entire surface of the substrate 1 , it is easy to short-circuit between electrodes of different cells. This case also includes the structure of the present application in which the plurality of electrodes 2 on the substrate 1 are short-circuited by the high-resistance short-circuit member 9.
【0031】また上記説明は、いわゆる単純マトリクス
型の液晶パネルについて行ったが、本発明はMIM、T
FT等及びメモリー容量の構造を有するアクティブ型パ
ネルに於いても実施可能である。この場合、本発明の第
3の手段のみに関しては上記説明に於いて「透明電極
2」とあるところは、必ずしも透明である必要はないの
で単に「電極2」と読み替えるものとする。また前記メ
モリー容量の一端は、高絶縁性が維持されるよう構成す
べき事は言うまでもない。The above description has been made with respect to a so-called simple matrix type liquid crystal panel.
The present invention is also applicable to an active panel having an FT or the like and a memory capacity structure. In this case, the present invention
Regarding only the means 3, the term “transparent electrode 2” in the above description is not necessarily required to be transparent, and is therefore simply referred to as “electrode 2”. Needless to say, one end of the memory capacity should be configured to maintain high insulation.
【0032】[0032]
【発明の効果】以上述べた如く、本発明の第1の手段に
よれば、同一基板1上の複数の前記透明電極2を高抵抗
の短絡部材9により常時短絡するため、ラビング時は勿
論の事、その後の工程内に於いても基板の取扱いに特別
な注意を払わなくても静電気による問題を発生させる事
がない。また本発明の第2の手段によれば、対向して組
み合わせた2枚の基板1上のそれぞれの透明電極2間は
前記シール材4又は前記短絡部材10を介し、高抵抗を
もって常時短絡するため、その後の工程内に於ける取扱
いに特別な注意を払わなくても静電気による問題を発生
させる事がない。第3の手段によれば、透明電極2が形
成された時点で既にこれらの複数の透明電極2が高抵抗
で短絡されている事になり、静電気問題は大幅に改善さ
れる。第4の手段によれば急速な静電気の発生に対して
も各透明電極2間に不均一な電荷分布が生じないため、
さらに安全性が向上する。第5の手段によれば前記短絡
部材9は前記透明電極2の形成時に同時に作成されるた
め、工程が簡略化される。第6の手段によれば前記短絡
部材9を設ける特別な工程が不要になる。 As described above, according to the first means of the present invention, the plurality of transparent electrodes 2 on the same substrate 1 are always short-circuited by the high-resistance short-circuit member 9, so that the transparent electrodes 2 are not only used during rubbing. In addition, even in the subsequent steps, no problem due to static electricity occurs even if special attention is not paid to the handling of the substrate. Further, according to the second aspect of the present invention, the transparent electrodes 2 on the two substrates 1 combined in opposition are always short-circuited with high resistance via the sealing material 4 or the short-circuit member 10. Even if no special attention is paid to the handling in the subsequent steps, no problem is caused by static electricity. According to the third means, the transparent electrode 2 is shaped
When formed, these transparent electrodes 2 already have high resistance.
Short circuit, and the static electricity problem is greatly improved.
It is. According to the fourth means, rapid generation of static electricity
Also, since non-uniform charge distribution does not occur between the transparent electrodes 2,
Further, safety is improved. According to the fifth means, the short circuit
The member 9 is formed at the same time when the transparent electrode 2 is formed.
Therefore, the process is simplified. According to the sixth means, the short circuit
A special process for providing the member 9 is not required.
【図1】本発明の第1の実施例を示す構造図である。FIG. 1 is a structural diagram showing a first embodiment of the present invention.
【図2】本発明の第2の実施例を示す構造図である。FIG. 2 is a structural diagram showing a second embodiment of the present invention.
【図3】本発明の第3の実施例を示す構造図である。FIG. 3 is a structural view showing a third embodiment of the present invention.
【図4】本発明の第4の実施例を示す構造図である。FIG. 4 is a structural diagram showing a fourth embodiment of the present invention.
【図5】本発明の第5の実施例を示す構造図である。FIG. 5 is a structural view showing a fifth embodiment of the present invention.
【図6】本発明の第6の実施例を示す構造図である。FIG. 6 is a structural diagram showing a sixth embodiment of the present invention.
【図7】本発明の第7の実施例を示す構造図である。FIG. 7 is a structural view showing a seventh embodiment of the present invention.
【図8】従来の構造を示す構造図である。FIG. 8 is a structural diagram showing a conventional structure.
【図9】従来の構造を示す構造図である。FIG. 9 is a structural diagram showing a conventional structure.
1 基板 2 透明電極 3 配向膜 4 シール材 5 絶縁層 6 絶縁層 7 遮光層 8 カラーフィルター 9 短絡部材 10 短絡部材 12 透明電極層 19 高抵抗部分 DESCRIPTION OF SYMBOLS 1 Substrate 2 Transparent electrode 3 Alignment film 4 Sealing material 5 Insulating layer 6 Insulating layer 7 Light shielding layer 8 Color filter 9 Short circuit member 10 Short circuit member 12 Transparent electrode layer 19 High resistance part
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7,DB名) G02F 1/1337 G02F 1/1343 G02F 1/136 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 7 , DB name) G02F 1/1337 G02F 1/1343 G02F 1/136
Claims (4)
1間に液晶層を有し、少なくとも1の基板1上の複数の
透明電極2間を高抵抗の短絡部材9により定常的に短絡
した構造を有する液晶表示装置において、少なくとも1
の基板1上の該短絡部材9を、前記透明電極2と同一の
材料であって、該透明電極2より薄い層とした事を特徴
とする液晶表示装置。A liquid crystal layer is provided between two substrates sealed by a sealing material, and a plurality of transparent electrodes on at least one of the substrates are constantly connected by a high-resistance short-circuit member. In a liquid crystal display device having a short-circuited structure, at least one
Of the short-circuit member 9 on the substrate 1, the transparent electrode 2 identical to
A material, a liquid crystal display device, characterized in that the thin layer from the transparent electrode 2.
1間に液晶層を有し、少なくとも1の基板1上の複数の
電極間を高抵抗の短絡部材9により定常的に短絡した構
造を有する液晶表示装置において、該1の基板1上の電
極と他の1の基板1上の電極とを高抵抗で定常的に短絡
する短絡手段を有する事を特徴とする液晶表示装置。2. A liquid crystal layer is provided between two substrates 1 sealed by a sealing material 4, and a plurality of electrodes on at least one substrate 1 are constantly short-circuited by a high-resistance short-circuit member 9. 1. A liquid crystal display device having a structure, comprising short-circuit means for constantly short-circuiting an electrode on one substrate 1 and an electrode on another substrate 1 with high resistance.
の前記短絡部材9による高抵抗部分と良導電性部分とか
らなる事を特徴とする請求項2に記載の液晶表示装置。3. The liquid crystal display device according to claim 2 , wherein said short-circuit means comprises a high-resistance portion and a good-conductivity portion formed by said short-circuit member 9 on at least one substrate 1.
設けた事を特徴とする請求項2に記載の液晶表示装置。4. The liquid crystal display device according to claim 2 , wherein said short-circuit means is provided outside said sealing material.
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JP28221892A JP3210443B2 (en) | 1992-09-29 | 1992-09-29 | Liquid crystal display |
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JP28221892A JP3210443B2 (en) | 1992-09-29 | 1992-09-29 | Liquid crystal display |
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---|---|---|---|---|
JPS59153526U (en) * | 1983-03-30 | 1984-10-15 | シャープ株式会社 | liquid crystal display element |
JP2770944B2 (en) * | 1987-08-19 | 1998-07-02 | キヤノン株式会社 | Liquid crystal element |
JPH0259723A (en) * | 1988-08-25 | 1990-02-28 | Matsushita Electric Ind Co Ltd | Tn type liquid crystal display panel |
JPH03260627A (en) * | 1990-03-12 | 1991-11-20 | Seiko Instr Inc | Liquid crystal device |
JPH03260626A (en) * | 1990-03-12 | 1991-11-20 | Seiko Instr Inc | Liquid crystal device |
JP3052337B2 (en) * | 1990-06-01 | 2000-06-12 | セイコーエプソン株式会社 | Liquid crystal display |
JPH05232459A (en) * | 1992-02-19 | 1993-09-10 | Catalysts & Chem Ind Co Ltd | Liquid crystal display cell and its production |
-
1992
- 1992-09-29 JP JP28221892A patent/JP3210443B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH06110048A (en) | 1994-04-22 |
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