JP3185256B2 - Surface acoustic wave device manufacturing method - Google Patents
Surface acoustic wave device manufacturing methodInfo
- Publication number
- JP3185256B2 JP3185256B2 JP16975091A JP16975091A JP3185256B2 JP 3185256 B2 JP3185256 B2 JP 3185256B2 JP 16975091 A JP16975091 A JP 16975091A JP 16975091 A JP16975091 A JP 16975091A JP 3185256 B2 JP3185256 B2 JP 3185256B2
- Authority
- JP
- Japan
- Prior art keywords
- protective film
- organic protective
- surface acoustic
- acoustic wave
- wave device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000010897 surface acoustic wave method Methods 0.000 title claims description 5
- 230000001681 protective effect Effects 0.000 claims description 13
- 238000005520 cutting process Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000010408 film Substances 0.000 claims 3
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、表面弾性波素子の製造
方法に関し、特に、ウェハ状圧電基板の切断、洗浄工法
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a surface acoustic wave device, and more particularly to a method for cutting and cleaning a wafer-like piezoelectric substrate.
【０００２】[0002]
【従来の技術】表面弾性波（以降ＳＡＷと略記する）
は、その素子の特性から、圧電基板上に形成されたアル
ミニウム電極上に、ＬＳＩなどの様に酸化膜や窒化膜等
の保護膜を形成していない。その為に、ウェハから素子
を各々切り出すには、従来は、図２に示す様な工程に従
って行われていた。即ち、、パターン・電極１が形成
されたウェハ２に、有機系保護膜３を均一塗布する。2. Description of the Related Art Surface acoustic waves (hereinafter abbreviated as SAW)
Does not form a protective film such as an oxide film or a nitride film on an aluminum electrode formed on a piezoelectric substrate, unlike an LSI or the like, due to the characteristics of the element. For that purpose, each element is cut out from the wafer according to a process as shown in FIG. That is, the organic protective film 3 is uniformly applied to the wafer 2 on which the pattern / electrode 1 is formed.
【０００３】、圧電性のウェハ２の３分の２の厚さま
で切断する（以降ハーフカットと称す）。[0003] The piezoelectric wafer 2 is cut to a thickness of two-thirds (hereinafter referred to as a half cut).
【０００４】、有機系保護膜３を溶剤で剥離する。[0004] The organic protective film 3 is peeled off with a solvent.
【０００５】、酸素プラズマ洗浄を行う。[0005] Oxygen plasma cleaning is performed.
【０００６】、手作業によりウェハ２を分割してＳＡ
Ｗチップ５を形成し、外観検査を行う。[0006] The wafer 2 is divided manually to
A W chip 5 is formed, and an appearance inspection is performed.
【０００７】、ステム８にＳＡＷチップ５をシリコン
樹脂７でマウントし、加熱硬化する。[0007] The SAW chip 5 is mounted on the stem 8 with the silicone resin 7 and cured by heating.
【０００８】、アルミニウム９でワイヤボンディング
を行う。[0008] Wire bonding is performed with aluminum 9.
【０００９】[0009]
【発明が解決しようとする課題】しかしながら、上述し
た従来の工法においては次の様な課題を有していた。However, the conventional method described above has the following problems.
【００１０】、ハーフカットによる切断の為に、次工
程で手作業による分割が必要であり工数が大である。[0010] In order to perform cutting by half-cutting, manual division is required in the next step, and the number of man-hours is large.
【００１１】、ハーフカットの為に、拡張リングを用
いた自動マウント工法が採用できないので、マウント前
に専用トレーへの詰換え工数が必要となる。[0011] Since an automatic mounting method using an expansion ring cannot be adopted for half-cutting, a man-hour for refilling to a dedicated tray before mounting is required.
【００１２】、分割作業、マウント作業の際に、ＳＡ
Ｗ表面へのきず、汚れ等が発生し易く、歩留低下の要因
となっている。[0012] During the dividing operation and the mounting operation, the SA
Scratches, stains and the like are easily generated on the W surface, which is a factor of lowering the yield.
【００１３】本発明は従来の上記実情に鑑みてなされた
ものであり、従って本発明の目的は、従来の技術に内在
する上記諸課題を解決することを可能とした表面弾性波
素子の新規な製造方法を提供することにある。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned conventional circumstances, and accordingly, an object of the present invention is to provide a novel surface acoustic wave device capable of solving the above-mentioned problems inherent in the prior art. It is to provide a manufacturing method.
【００１４】[0014]
【課題を解決するための手段】上記目的を達成する為
に、本発明に係るＳＡＷ製造方法は、有機系保護膜を塗
布したまま厚さ方向に完全に切断（フルカット）する切
断工程と、ＳＡＷをステムにマウント後に有機系保護膜
を溶剤及び酸素プラズマにて剥離する工程を含んで構成
される。In order to achieve the above object, a SAW manufacturing method according to the present invention comprises a cutting step of completely cutting (full cut) in a thickness direction while an organic protective film is applied; After the SAW is mounted on the stem, the organic protective film is removed by a solvent and oxygen plasma.
【００１５】[0015]
【実施例】次に本発明をその好ましい一実施例について
図面を参照して具体的に説明する。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a block diagram showing a preferred embodiment of the present invention.
【００１６】図１は本発明による製造工程のフロー図及
び各工程に対応する断面図である。FIG. 1 is a flow chart of a manufacturing process according to the present invention and a sectional view corresponding to each process.
【００１７】図１を参照するに、先ず第１工程として、
、パターン電極１の形成されたウェハ２に有機系保護
膜３を均一塗布する。Referring to FIG. 1, first, as a first step,
Then, the organic protective film 3 is uniformly applied to the wafer 2 on which the pattern electrodes 1 are formed.
【００１８】次に第２工程として、、ウェハ２をフル
カット用テープ４に貼り付ける。Next, as a second step, the wafer 2 is attached to the full-cut tape 4.
【００１９】次に第３工程として、、ウェハ２をフル
カット切断する。Next, as a third step, the wafer 2 is full-cut.
【００２０】次いで第４工程として、、テープ４を拡
張し、各チップ５をリング状枠６で固定する。Next, as a fourth step, the tape 4 is expanded, and each chip 5 is fixed with a ring-shaped frame 6.
【００２１】続いて第５工程として、例えば、自動マ
ウンタを用い、シリコン樹脂７でステム８にマウントす
る。Subsequently, as a fifth step, the stem 8 is mounted on the stem 8 with the silicone resin 7 using, for example, an automatic mounter.
【００２２】 その後に、第６工程として、、シリコ
ン樹脂７を加熱硬化させる。Thereafter, as a sixth step, the silicon resin 7 is cured by heating.
【００２３】次に第７工程として、、有機系保護膜３
を溶剤及び酸素プラズマで剥離洗浄する。Next, as a seventh step, an organic protective film 3 is formed.
Is stripped and cleaned with a solvent and oxygen plasma.
【００２４】最後に、第８工程として、、外観検査後
にアルミニウムワイヤでワイヤボンディング９を行う。Finally, as an eighth step, wire bonding 9 is performed with an aluminum wire after the appearance inspection.
【００２５】[0025]
【発明の効果】以上の説明したように、本発明によれ
ば、ＳＡＷ製造工程において、有機系保護膜が着いたま
まで基板をフルカットし、更に、システムに各ＳＡＷ素
子をマウントしてから、溶剤剥離、酸素プラズマ剥離す
ることにより、次の様な効果が得られる。As described above, according to the present invention, in the SAW manufacturing process, the substrate is fully cut while the organic protective film is still attached, and further, each SAW element is mounted on the system. The following effects can be obtained by solvent stripping and oxygen plasma stripping.
【００２６】（１）、基板のフルカットが可能となった
為に、分割作業、チップ詰換作業が無くなり、大きな工
数削減となる。(1) Since the substrate can be cut completely, the division work and the chip refilling work are eliminated, and the number of man-hours is greatly reduced.
【００２７】（２）、切断されたチップ状のＳＡＷに直
接触手することが無くなったこと、またマウント工程で
も表面に有機系保護膜が残っている為に、ＳＡＷ表面へ
のきず、しみ、汚れ等の発生が少なくなり、歩留が向上
する。(2) Since there is no direct contact with the cut chip-shaped SAW, and the organic protective film remains on the surface even in the mounting process, the surface of the SAW is not scratched, stained, or stained. And the like are reduced, and the yield is improved.
【００２８】（３）、ワイヤボンディング工程直前に、
溶剤洗浄、酸素プラズマ洗浄を行うことになり、ステム
のボンディング部等も洗浄され、接続、気密信頼性が向
上する。(3) Immediately before the wire bonding step,
Since solvent cleaning and oxygen plasma cleaning are performed, the bonding portion of the stem and the like are also cleaned, and connection and airtight reliability are improved.
【図１】本発明の一実施例を示すフロー図及び各フロー
に対応する断面図である。FIG. 1 is a flow chart showing an embodiment of the present invention and a cross-sectional view corresponding to each flow.
【図２】従来におけるこの種の技術を示す工法のフロー
図である。FIG. 2 is a flow chart of a conventional method showing this kind of technique.
１…パターン電極 ２…ウェハ ３…有機系保護膜 ４…切断用テープ ５…ＳＡＷチップ ６…リング状枠 ７…シリコン樹脂 ８…ステム ９…Ａｌワイヤ DESCRIPTION OF SYMBOLS 1 ... Pattern electrode 2 ... Wafer 3 ... Organic protective film 4 ... Cutting tape 5 ... SAW chip 6 ... Ring frame 7 ... Silicon resin 8 ... Stem 9 ... Al wire
Claims (1)
電極を形成する表面弾性波素子の製造方法において、く
し型電極が多数個形成されたウェハ状の圧電基板を切断
する際に電極保護の為に塗布した有機系保護膜を付着さ
せたまま厚さ方向に完全に切断し、更にそのまま金属ス
テム等にマウントした後に前記有機系保護膜を溶剤及び
酸素プラズマにより剥離することを特徴とする表面弾性
波素子の製造方法。In a method of manufacturing a surface acoustic wave device in which a comb-shaped aluminum thin film electrode is formed on a piezoelectric substrate, when cutting a wafer-shaped piezoelectric substrate having a large number of comb-shaped electrodes formed thereon, the electrode is protected. Surface elasticity characterized by completely cutting in the thickness direction with the organic protective film applied on the substrate being adhered, and further mounting the organic protective film as it is on a metal stem or the like, and then removing the organic protective film with a solvent and oxygen plasma. Method of manufacturing wave element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16975091A JP3185256B2 (en) | 1991-07-10 | 1991-07-10 | Surface acoustic wave device manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16975091A JP3185256B2 (en) | 1991-07-10 | 1991-07-10 | Surface acoustic wave device manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0522063A JPH0522063A (en) | 1993-01-29 |
| JP3185256B2 true JP3185256B2 (en) | 2001-07-09 |
Family
ID=15892153
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16975091A Expired - Fee Related JP3185256B2 (en) | 1991-07-10 | 1991-07-10 | Surface acoustic wave device manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3185256B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6426583B1 (en) | 1999-06-14 | 2002-07-30 | Matsushita Electric Industrial Co., Ltd. | Surface acoustic wave element, method for producing the same and surface acoustic wave device using the same |
| JP4096947B2 (en) * | 2005-01-26 | 2008-06-04 | セイコーエプソン株式会社 | Substrate before insulation treatment and substrate manufacturing method |
-
1991
- 1991-07-10 JP JP16975091A patent/JP3185256B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0522063A (en) | 1993-01-29 |
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