JP2996215B2 - Semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device such as a light emitting diode having a means for preventing electrostatic breakdown.

[0002]

2. Description of the Related Art As shown in FIG. 1, a conventional blue light emitting diode 1 using a GaN (gallium nitride) semiconductor is:
It comprises a light emitting diode chip (light emitting element) 2, first and second leads 3, 4 functioning as terminal conductors, and a light-transmitting and insulating resin sealing body 5 functioning as an enclosure. As shown in FIG. 2, the light emitting diode chip 2 is connected to a sapphire substrate 6, a semiconductor substrate 9 composed of an n-type GaN region 7 and a p-type GaN region 8 epitaxially grown thereon, and an n-type GaN region 7. First electrode 10 and second electrode 1 connected to p-type GaN region 8
1 is provided. The first lead 3 in FIG. 1 has a dish-shaped support portion (header) 12, to which the sapphire substrate 6 of the light emitting diode chip 2 is fixed by an adhesive 13. The first electrode 10 of the light emitting diode chip 2 is
The second electrode 11 is connected to the post portion 15 of the second lead 4 by a second thin lead wire 16. The transparent resin sealing body 5 includes the light emitting diode chip 2,
It is formed so as to cover the dish-shaped support part 12, the post part 15, and the first and second fine lead wires 14, 16. First
The rod-shaped portions of the second leads 3 and 4 are led out of the bottom surface of the resin sealing body 5 in parallel with each other.

[0003]

By the way, when a charged object such as a human body comes into contact with the lead 3 or 4, the chip 2 of the light emitting diode 1 may be electrostatically damaged. This means that the first and second electrodes 1 of the light-emitting diode chip 2 are arranged close to each other and are open.
This occurs because a high voltage of static electricity is applied between 0 and 11, and as a result, a high voltage is applied to the pn junction of the semiconductor substrate 9. This destruction due to static electricity is particularly likely to occur in GaN light emitting diodes, but may also occur in other semiconductor devices.

An object of the present invention is to provide a semiconductor device which can easily prevent electrostatic breakdown.

[0005]

SUMMARY OF THE INVENTION In order to solve the above problems and achieve the above object, the present invention provides a semiconductor chip, at least first and second terminal conductors connected to the semiconductor chip, And an enclosure, wherein the first terminal conductor
Is used to connect the chip support and this chip support to the outside.
And the second terminal conductor has an internal
Connect the lead wire connection and this internal lead wire connection to the outside.
A rod-shaped lead portion for connection.
The chip is fixed to the chip supporting portion, and the semiconductor chip is
Between the second terminal conductor and the internal lead thin wire connection portion
Are connected by an internal lead thin wire, and the semiconductor chip and the
The chip support portion of the first terminal conductor and the second terminal conductor
The internal lead thin wire connection portion of the body and the internal lead thin wire;
Part of the rod-shaped lead portion of the first and second terminal conductors
: It is coated with the said enclosure, in a semiconductor device in which at least a part of which is derived to the outside of said enclosure of said rod-shaped lead portion of the first and second terminal conductors, the first and second A support base for supporting the rod-shaped lead portion of the terminal conductor is provided, and the support base has a groove or a hole.
And the groove or hole is provided with the first and second terminal conductors.
A rod-shaped lead portion is inserted, the support base is formed of a resistive substance having a lower resistivity than air, and the resistance of the support base between the rod-shaped lead portions of the first and second terminal conductors is 50 kΩ to 50 kΩ. 50 MΩ, and the support
The present invention relates to a semiconductor device, wherein at least a part of a body is covered with the surrounding body . The first and second terminal conductors have rod-shaped leads.
A resistor layer is provided on the support base into which the lead portion is inserted, and this resistor layer can be electrically connected to the bar-shaped lead portions of the first and second terminal conductors. Note that the semiconductor chip in the present invention means a chip which is easily damaged by electrostatic discharge such as a light emitting diode chip and a chip including an insulated gate field effect transistor.

[0006]

According to the present invention, the following effects can be obtained.
Can be (A) Supporting the rod-shaped leads of the first and second terminal conductors
Static electricity by the supporting substrate or the resistor layer
It forms a bypass for energy and is separated from the semiconductor chip.
Energy can be consumed in
Good protection of conductive chips from static electricity can be achieved.
it can. (B) Support rod-shaped leads by providing grooves or holes in the support base
Therefore, the rod-shaped lead can be stably supported.
You. (C) between the rod-shaped leads of the supporting base or the resistor layer;
Was set in the range of 50 kΩ to 50 MΩ,
The supporting substrate or resistor layer has characteristics such as leakage current check.
Does not substantially interfere with measurement.

[0007]

Embodiments and Examples Next, embodiments and examples of the present invention will be described with reference to FIGS. However, the real and Oite FIGS. 1 and 2 in FIG. 5 identical parts shown Figure 3 and the second embodiment shows the first embodiment and their description is omitted with the same reference numerals .

[0008]

First Embodiment A light-emitting diode 1a according to a first embodiment shown in FIG. 3 includes a light-emitting diode chip 2 as a semiconductor chip, metal rod-shaped leads 3, 4 as first and second terminal conductors, and an enclosure. In addition to the light-transmitting resin sealing body 5 as a body and the first and second thin metal lead wires 14 and 16 as in the light-emitting diode 1 of FIG. ing.

As shown in FIG. 4, the resistive support base 17 has first and second grooves 18 and 19 into which first and second leads 3 and 4 are fitted. Further, the bottom surfaces of the flange portions 3a, 4a of the first and second leads 3, 4 abut against the upper surface of the resistive support base 17, and the rod-shaped portions are inserted into the grooves 18, 19 of the support base 17. Accordingly, the resistive support base 17 mechanically supports the first and second leads 3 and 4 and electrically connects the first and second leads 3 and 4.

The resistive support base 17 is made of a plate-like body of an epoxy resin mixed with fine conductive particles and has weak conductivity. The resistance value between the first and second leads 3 and 4 of the resistive support base 17 is about 3 MΩ. Note that the resistivity of the resistive support base 17 is lower than the resistivity of the air and the resin sealing body 5. The resistance value of the resistive support base 17 between the first and second leads 3 and 4 is equal to the first and second leads.
Is smaller than the resistance value of the resin sealing body 5 between the leads 3 and 4.

The resistive support base 17 is embedded in the resin sealing body 5, and the first and second leads 3 and 4 are led out from the resin sealing body 5 covering the lower surface of the resistive support base 17. I have. Note that the lower surface of the resistive support base 17 is
It is also possible to adopt a structure that is not covered with.

When manufacturing the light emitting diode of FIG. 3,
The first and second leads 3 and 4 are inserted into the first and second grooves 18 and 19 of the resistive support base 17. Since the first and second leads 3 and 4 have a lead frame structure for forming a plurality of light emitting diodes substantially simultaneously, the first and second leads 3 and 4 have the same structure. 1st and 2nd lead
The support base 17 is fitted to the hands 3 and 4. Next, the light emitting diode chip 2 is fixed to the header 12 by a known die bonding method and a wire bonding method.
The connection of the lead wires 14 and 16 is performed. Subsequently, the light emitting diode assembly is arranged in a molding die, and a resin sealing body 5 is formed by a well-known molding method to complete the light emitting diode 1a.

The light emitting diode 1a of the first embodiment has the following effects. (B) Since the weak conductive resistive support base 17 is interposed between the first and second leads 3 and 4, even if static electricity is applied between the first and second leads 3 and 4, The electric energy is bypassed to the resistive support base 17 and the diode chip 2 can be protected from static electricity without applying any energy between the electrodes 10 and 11 of the diode chip 2 to destroy the diode chip 2. (B) Since the resistance supporting base 17 has a resistance value of about 3 MΩ, the leakage current passing therethrough is the light emitting diode 1a.
This is a level that does not substantially cause a problem in characteristic measurement such as a leak current check or in use. For example,
When checking the leak current at 3 V, only a current of 3 V / 3 MΩ = 1 μA flows through the resistive support base 17. If the upper limit of the leak current check is 5 μA, the current of the resistive support base 17 is It doesn't matter much. (C) By providing the support base 17, the mechanical stability of the first and second leads 3, 4 is improved.

The light emitting diode 1c of the second embodiment shown in FIG. 5 has the same configuration as that of FIG. 3 except that a part of the light emitting diode 1a of FIG. 3 is modified. The support base of Figure 5 1
7b is identical in geometry to the support base 17 of FIG. 3, but does not contain a conductive substance and is made of an insulating material ceramic. A resistor layer 20 is provided on the surface of the insulating support base 17b. The resistor layer 20 is formed by applying a mixture of conductive particles to a resin, and is electrically connected to the first and second 3 and 4. The first and second leads 3 and 4 and the resistor layer 20 can be connected to each other with a conductive adhesive in order to surely achieve the electrical connection. Resistor layer 2 between leads 3 and 4
A resistance value of 0 is about 3 MΩ. According to the second embodiment, the same effect as that of the first embodiment can be obtained.

[0015]

[Modifications] The present invention is not limited to the above-described embodiment, and for example, the following modifications are possible. (1) First and second terminals as first and second terminal conductors
Resistance Ne及 beauty view of a resistive support base 17 between leads 3 and 4
5 The first and second re of - the resistance value of the resistor layer 20 between the de 3,4 can be varied as required. By setting the resistance to a value within the range of 50 kΩ to 50 MΩ, an effect of preventing electrostatic breakdown can be obtained. In order to prevent the leakage current check of the chip 2 from being disturbed, it is desirable that the resistance value be in a range of 1 to 5 MΩ. (2) The present invention can be applied to other semiconductor devices such as a light emitting diode other than a GaN light emitting diode or an insulated gate field effect transistor. (3) Groove 1 of support bases 17 and 17b in FIGS. 3 and 5
8, 19 can be changed to through holes. (4) In FIG. 3, the support base 17 can be an oxide sintered body having conductivity (resistance). (5) In FIG. 3, a conductive layer is provided at a contact portion of the support base 17 with the first and second leads 3 and 4, to ensure electrical connection to the first and second leads 3 and 4. Can be achieved. (6) can be provided a small very thin conductive layer of the cross-sectional area instead of the resistor layer 20 in FIG.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a conventional light emitting diode.

FIG. 2 is an enlarged sectional view showing the diode chip of FIG. 1;

FIG. 3 is a sectional view showing a light emitting diode according to a first embodiment of the present invention.

FIG. 4 is a plan view showing the support base of FIG. 3;

FIG. 5 is a sectional view showing a light emitting diode according to a second embodiment of the present invention.

[Explanation of symbols]

 2 light emitting diode chip 3, 4 lead 5 light transmitting resin sealing body 17, 17a resistive support base

Claims (2)

(57) [Claims] 1. A semiconductor device comprising: a semiconductor chip; at least first and second terminal conductors connected to the semiconductor chip; and an insulating enclosure, wherein the first terminal conductor includes a chip supporting portion.
A rod-shaped lead for connecting this chip support to the outside
And the second terminal conductor has an internal lead thin wire connection portion.
And a rod for connecting this internal lead thin wire connection to the outside
And the semiconductor chip has a chip support.
The semiconductor chip and the second terminal conductor.
Between the internal lead wire connection portion of the body and the internal lead wire
Connected between the semiconductor chip and the first terminal conductor.
The chip supporting portion and the internal lead of the second terminal conductor;
Wire connection portion, the internal lead wire, and the first and second wires.
A part of the rod-shaped lead portion of the terminal conductor
The rods of the first and second terminal conductors covered with a body
In the semiconductor device at least a portion of the lead portion is derived is <br/> is outside of said enclosure, supporting base for supporting is provided a rod-shaped lead portion of the first and second terminal conductors The support base has a groove or a hole, and the groove or the hole has the
The support base 1 and the bar lead portion of the second terminal conductor is inserted is formed with a small resistive material having resistivity than air, the between the rod-shaped lead portions of said first and second terminal conductors The resistance value of the support base is 50 kΩ to 50 MΩ, and at least a part of the support base is covered with the enclosure.
Wherein a is. 2. A semiconductor device comprising: a semiconductor chip; at least first and second terminal conductors connected to the semiconductor chip; and an insulating enclosure, wherein the first terminal conductor is a chip support.
A rod-shaped lead for connecting the chip support of the
Wherein the second terminal conductor has an internal lead thin wire connection portion.
A rod shape for connecting this internal lead wire connection to the outside
A lead portion, wherein the semiconductor chip supports the chip.
The semiconductor chip and the second terminal conductor
Between the internal lead thin wire connection portion and the internal lead thin wire
Connected and in front of the semiconductor chip and the first terminal conductor
The chip support and the inner lead of the second terminal conductor
A thin wire connecting portion, the inner lead thin wire, and the first and second wires;
A part of the rod-shaped lead portion of the terminal conductor is the enclosure
And the rod-shaped ribs of the first and second terminal conductors.
In the semiconductor device in which at least a portion of the over de portion is led out to the outside of said enclosure, supporting base for supporting the rod-shaped lead portion of the first and second terminal conductors are provided, the support base Has a groove or hole, and the groove or hole has the
The rod-shaped lead portions of the first and second terminal conductors are inserted , and at least a part of the support base is covered with the enclosure. The support base is made of an insulating material, and a resistor layer is formed on the support base. The resistor layer is formed in the rod shape of the first and second terminal conductors.
It is electrically connected to the lead portion, wherein a resistance value of the resistor layer between the bar-shaped lead portions of the first and second terminals electrically is 50Keiomega～50emuomega.