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JP2978852B2 - Wire bonding connection method for semiconductor device - Google Patents

Wire bonding connection method for semiconductor device

Info

Publication number
JP2978852B2
JP2978852B2 JP9232850A JP23285097A JP2978852B2 JP 2978852 B2 JP2978852 B2 JP 2978852B2 JP 9232850 A JP9232850 A JP 9232850A JP 23285097 A JP23285097 A JP 23285097A JP 2978852 B2 JP2978852 B2 JP 2978852B2
Authority
JP
Japan
Prior art keywords
ball
metal wire
bonding
skewer
thin metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP9232850A
Other languages
Japanese (ja)
Other versions
JPH1174305A (en
Inventor
義之 穐本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
YAMAGUCHI NIPPON DENKI KK
Original Assignee
YAMAGUCHI NIPPON DENKI KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by YAMAGUCHI NIPPON DENKI KK filed Critical YAMAGUCHI NIPPON DENKI KK
Priority to JP9232850A priority Critical patent/JP2978852B2/en
Publication of JPH1174305A publication Critical patent/JPH1174305A/en
Application granted granted Critical
Publication of JP2978852B2 publication Critical patent/JP2978852B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は半導体装置のワイヤ
ボンディング接続方法に関し、特にペレットと外部リー
ドとを金属細線を用いて接続して構成される半導体装置
のワイヤボンディング接続方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire bonding method for a semiconductor device, and more particularly to a semiconductor device formed by connecting a pellet and an external lead using a thin metal wire.
The wire bonding connection method.

【０００２】[0002]

【従来の技術】従来の、アイランド上に載置されたペレ
ットと外部リードとを、ワイヤボンディングにより接続
して形成される半導体装置の１例の部分外観側面図が、
図３に示されている。図３において、当該半導体装置
（以下、ボンダーと云う）においては、リードフレーム
に設けられているアイランド１の上部には、半田材２に
より半導体ペレット３が固着・搭載されており、ペレッ
ト３の上面には、金属細腺５の接続用として機能するＡ
ｌ電極パッド４が設けられている。金属配線５として
は、Ａｕ腺、Ａｌ腺またはＣｕ腺等が用いられている
が、一般的にはＡｕ腺が用いられる場合が多い。ペレッ
ト３と外部リード７とを、金属細線５により接続する従
来のワイヤボンディング接続方法としては、一般にボー
ル・ウェッジ・ボンディングが用いられている。以下、
従来のワイヤボンディング接続方法について、図４を参
照して説明する。2. Description of the Related Art A partial external appearance side view of one example of a conventional semiconductor device formed by connecting a pellet placed on an island and an external lead by wire bonding is shown in FIG.
This is shown in FIG. In FIG. 3, in the semiconductor device (hereinafter referred to as a bonder), a semiconductor pellet 3 is fixed and mounted on a top of an island 1 provided on a lead frame by a solder material 2. Has a function of connecting the metal fine glands 5
1 electrode pad 4 is provided. As the metal wiring 5, an Au gland, an Al gland, a Cu gland, or the like is used, but in general, an Au gland is often used. As a conventional wire bonding connection method for connecting the pellet 3 and the external lead 7 with the thin metal wire 5, ball wedge bonding is generally used. Less than,
A conventional wire bonding connection method will be described with reference to FIG.

【０００３】図４において、第１ボンド側となるペレッ
ト３の上面に設けられているＡｌ電極パッド４と金属細
腺５とを接合する際には、Ａｌ電極パッド４をトーチを
用いて溶融し、金属細腺５の先端部に形成されている金
属ボール６を、溶融したＡｌ電極パッド４に押し付ける
ことによって接合が行われる。このようにして、金属細
腺５をペレット３に接合する方法は、一般にボール・ボ
ンディングと呼ばれている。また、第２ボンド側である
リードフレームにおける外部リード７と金属細腺５とを
接合する際においては、金属細腺５は、そのままの状態
で当該外部リード７に押し付けられて接合が行われてい
る。このような第２ボンド側の接合方法は、ウェッジ・
ボンディングと呼ばれている。そして、前記第１ボンド
側のボール・ボンディングの終了に続いて、第２ボンド
側のウェッジ・ボンディングが行われ、その終了後にお
いて、当該接合部からは機械的強制力により残余の金属
細腺５が引きちぎられて、次段階の接合に対するボンデ
ィングの準備が開始される。以降における接合の各段階
において、ペレットと外部リードとを接合するボンディ
ング接続方法としては、上記の方法と同様にして行われ
る。In FIG. 4, when the Al electrode pad 4 provided on the upper surface of the pellet 3 serving as the first bond side and the metal fine gland 5 are joined, the Al electrode pad 4 is melted using a torch. The bonding is performed by pressing the metal ball 6 formed at the tip of the metal gland 5 against the molten Al electrode pad 4. The method of joining the metal glands 5 to the pellets 3 in this manner is generally called ball bonding. When joining the external lead 7 and the fine metal gland 5 in the lead frame on the second bond side, the fine metal gland 5 is pressed against the external lead 7 as it is, and the bonding is performed. I have. Such a bonding method on the second bond side includes a wedge
This is called bonding. Then, following the completion of the ball bonding on the first bond side, wedge bonding on the second bond side is performed, and after the completion, the remaining metal fine glands 5 are mechanically forced from the joint. Is cut off, and preparation for bonding for the next bonding is started. In each subsequent bonding step, a bonding connection method for bonding the pellet and the external lead is performed in the same manner as the above method.

【０００４】[0004]

【発明が解決しようとする課題】上述した従来の半導体
装置およびそのワイヤボンディング接続方法において
は、第１ボンドとなるペレットのボール・ボンディング
に際しては、金属細線の先端をボール形状として、溶融
したＡｌ電極パッドに押し付けて接合が行われるため
に、当該接合面積が拡大されて接合が行われる状態とな
り、これにより、両者の接合強度が良好に維持される
が、他方において、第２ボンドの外部リードを金属細線
に接合するウェッジ・ボンディングにおいては、その接
合面積としては、当該金属細線の線径を押しつぶして形
成される限られた接合面積となっており、このために、
第１ボンドのボール・ボンディングと比較して、第２ボ
ンドのウェッジ・ボンディングにおいては、外部リード
と金属細線との接着強度が極端に劣る接合状態になると
いう欠点がある。In the above-described conventional semiconductor device and its wire bonding connection method, when the ball bonding of the pellet as the first bond is performed, the tip of the fine metal wire is formed into a ball shape and the molten Al electrode is formed. Since the bonding is performed by pressing against the pad, the bonding area is enlarged and the bonding is performed, whereby the bonding strength between the two is maintained well. On the other hand, the external lead of the second bond is connected. In the wedge bonding to join the metal fine wire, the bonding area is a limited bonding area formed by crushing the wire diameter of the metal thin wire, for this,
Compared to ball bonding of the first bond, wedge bonding of the second bond has a disadvantage that the bonding strength between the external lead and the fine metal wire is extremely poor.

【０００５】また、上述のように、ウェッジ・ボンディ
ングによる接合方法においては、金属細線の線径を押し
つぶして外部リードに接合しているために、接合時の接
着面積が限定されて、ボンディング後における接合強度
に不足を生じ、外部リードにおける数十μｍ程度の傾き
に対しても、当該ボンディングによる接合が不可能にな
るという欠点がある。Further, as described above, in the bonding method by wedge bonding, since the diameter of the thin metal wire is crushed and bonded to the external lead, the bonding area at the time of bonding is limited, and the bonding area after bonding is limited. There is a shortcoming in that the bonding strength is insufficient, and the bonding by the bonding becomes impossible even for an inclination of about several tens of μm in the external lead.

【０００６】本発明の目的は、第２ボンド側のウェッジ
・ボンディングにおける接合強度を高めて、第１ボンド
側のボール・ボンディングにおける接合強度との差異を
解消するとともに、外部リードの数十μｍ程度の傾きに
対しても、接合の安定性を十分に実現することを可能と
し、ワイヤボンディングによる接合信頼性を向上させた
半導体装置を実現するとともに、そのように、接合信頼
性を向上させることのできるワイヤボンディング接続方
法を実現することにある。SUMMARY OF THE INVENTION It is an object of the present invention to increase the bonding strength in wedge bonding on the second bond side to eliminate the difference from the bonding strength in ball bonding on the first bond side, and to provide the external leads of several tens μm. In addition to achieving a semiconductor device with improved bonding reliability by wire bonding, it is possible to sufficiently realize bonding stability even with respect to the inclination of the semiconductor device. It is to realize a wire bonding connection method that can be performed.

【０００７】[0007]

【０００８】[0008]

【課題を解決するための手段】 第１の発明は、 半導体装
置のペレットと金属細線とのボール・ボンディングによ
る接合終了後に、当該金属細線と外部リードとの接合を
行うワイヤボンディング接続方法として、登録されてい
る串ボールの設定位置情報を参照して、所定のツールを
介して前記金属細線を所定の長さまで繰り出す第１のス
テップと、前記第１のステップにおいて繰り出された金
属細線上の前記串ボールの設定位置に、所定の電気トー
チによるスパークを飛ばすことにより、当該串ボールを
形成する第２のステップとを有して前記ペレットに接続
されている金属細線上の外部リード接合位置に団子形状
の前記串ボールを形成した後、切断されない状態の金属
細線の途中に形成された前記串ボールを前記ツールの先
端において銜え込み、前記外部リード側に移行する第３
のステップと、前記ツールにより前記串ボールを介し
て、ボール・ボンディングにより前記金属細線を外部リ
ードの接合部に接合する第４のステップと、しかる後
に、前記接合部から前記金属細線を機械的に切断する第
５のステップとを有することを特徴とする半導体装置の
ワイヤボンディング接続方法にある。 この第１の発明に
おいては、前記第１のステップとして、前記串ボールの
設定位置情報が、接続対象のペレットと外部リードとの
間の距離情報と、金属細線の高さ情報とを含む情報とし
て指定されており、また前記所定のツールを介して前記
金属細線を繰り出す方法が、当該ツールを上方に上昇さ
せることにより、上下方向に沿う状態において当該金属
細線の繰り出しを行うことができる。 SUMMARY OF THE INVENTION The first aspect of the present invention, after joining ends by ball bonding between the pellets and the fine metal wires of semiconductor devices, as a wire bonding connection method of performing bonding between the metal thin wires and the external lead, registration Have been
Refer to the setting position information of the skewer ball to
A first thread for feeding the thin metal wire to a predetermined length through
Step and the gold fed in the first step
At the set position of the skewer ball on the fine wire,
By flying the sparks from
Connecting to the pellet having a second step of forming
Dumpling at the external lead joint position on the fine metal wire
After the skewer ball is formed, the metal is not cut
The skewer ball formed in the middle of the fine wire is
The third that is gripped at the end and moves to the external lead side
And the tool is used to
And external bonding of the thin metal wire by ball bonding.
The fourth step of joining to the joint of the
A second step of mechanically cutting the thin metal wire from the joint;
5. A semiconductor device comprising:
In the wire bonding connection method. In this first invention
In the first step, as the first step,
When the set position information indicates that the pellet to be connected
The information includes the distance information between the two and the height information of the thin metal wire.
And the above-mentioned via the predetermined tool.
The method of feeding the thin metal wire raises the tool upward.
The metal in the vertical direction.
The feeding of the thin line can be performed.

【０００９】第２の発明は、半導体装置のペレットと金
属細線とのボール・ボンディングによる接合終了後に、
当該金属細線と外部リードとの接合を行うワイヤボンデ
ィング接続方法として、登録されている串ボールの設定
位置情報を参照して、所定のツールを介して前記金属細
線を所定の長さまで繰り出す第１のステップと、前記第
１のステップにおいて繰り出された金属細線上の前記串
ボールの設定位置に、当該金属細線を押し潰して特定の
板状形態を形成する第２のステップと、前記板状形態に
対し、所定の電気トーチによるスパークを飛ばすことに
より、前記串ボールを形成する第３のステップとを有し
て前記ペレットに接続されている金属細線上の外部リー
ド接合位置に団子形状の前記串ボールを形成した後、前
記金属細線を、前記串ボールを介して、ボール・ボンデ
ィングにより前記外部リードに接合する第４のステップ
とを有することを特徴とする半導体装置のワイヤボンデ
ィング接続方法にある。 According to a second aspect of the present invention, there is provided a semiconductor device comprising a pellet and gold.
After the end of ball bonding with the fine wire,
A wire bonder that joins the metal wire and the external lead
Registered skewer balls as the connecting method
Referring to the position information, the metal fine
A first step of feeding the line to a predetermined length;
The skewer on the thin metal wire drawn out in step 1
At the set position of the ball, crush the thin metal wire to
A second step of forming a plate-like form;
On the other hand, to fly a spark with a predetermined electric torch
And a third step of forming the skewer ball.
External lead on the thin metal wire connected to the pellet
After forming the dumpling-shaped skewer ball at the joint position,
The metal thin wire is passed through the skewer ball into a ball bonder.
A fourth step of joining to the external lead by a ring
And a wire bonder for a semiconductor device.
Connection method.

【００１０】さらに、前記第２の発明においては、前記
第４のステップとしては、前記ツールの先端において前
記串ボールを銜え込み、前記外部リード側に移行するス
テップと、前記串ボールを介して、ボール・ボンディン
グにより前記金属細線を外部リードに接合するステップ
とを有する用にしてもよく、また、前記第１のステップ
においては、前記串ボールの設定位置情報としては、接
続対象のペレットと外部リードとの間の距離情報と、金
属細線の高さ情報とを含む情報として指定してもよく、
また前記所定のツールを介して前記金属細線を繰り出す
方法としては、当該ツールを上方に上昇させることによ
り、上下方向に沿う状態において当該金属細線の繰り出
しを行うようにしてもよい。[0010] Further, in the second aspect of the present invention,
A fourth step is to hold the skewer ball at the tip of the tool and move to the external lead side .
And step, through the skewer ball may be in use with a step <br/> and joined to the external lead of the metal thin wires by ball bonding, also, in the first step, the skewer ball The set position information may be specified as information including distance information between the pellet to be connected and the external lead, and height information of the thin metal wire,
Further, as a method of feeding out the thin metal wire through the predetermined tool, the thin metal wire may be fed out in a state along the vertical direction by raising the tool upward.

【００１１】[0011]

【発明の実施の形態】次に、本発明について図面を参照
して説明する。Next, the present invention will be described with reference to the drawings.

【００１２】図１（ａ）、（ｂ）および（ｃ）は、本発
明の半導体体装置の第１の実施形態において、アイラン
ド上に載置されたペレットと外部リードとを、ワイヤボ
ンディング接続方法により接続する接合処理過程を示す
部分外観側面図である。以下においては、図１を参照し
て、本実施形態におけるワイヤボンディング接続方法に
ついて説明する。FIGS. 1 (a), 1 (b) and 1 (c) show a first embodiment of a semiconductor device according to the present invention, in which a pellet mounted on an island and an external lead are connected by wire bonding. It is a partial external appearance side view which shows the joining process process connected by. Hereinafter, the wire bonding connection method in the present embodiment will be described with reference to FIG.

【００１３】まず、従来例の場合と同様に、第１ボンド
側となるペレット３の上面に設けられているＡｌ電極パ
ッド４と金属細腺５の接合は、ボール・ボンディングに
より、金属細腺５の先端部に形成されている金属ボール
６を、トーチを用いて溶融されたＡｌ電極パッド４に押
し付けることによって行われる。この接合状態は、図１
（ａ）に示されているとうりである。次に、図１（ｂ）
に示されるように、ボンダーに予め登録されている座標
データ（第１ボンドと第２ボンド間の距離）および金属
細線５の高さ条件を参照し、第２ボンダー側の外部リー
ド７に対する金属細線５の接合上必要となる金属細線５
の長さを勘案して、ツール８が所定の高さまで上昇さ
れ、それに伴ない金属細線５がツール８を介して繰出さ
れる。この場合におけるツール８の上昇見込み量は、串
ボール１０の設定位置を規定している前記座標データお
よび金属細線５の高さにより決定される。次いで、電気
トーチ９を用いて金属細線５上の串ボール設定位置にス
パークを飛ばし、当該設定位置に串ボール１０を形成す
る。その際に使用される電気トーチ９としては、固定ト
ーチ方式によるものが用いられる。この電気スパークに
ついては、従来例の第１ボンドが、仮に線径が３０μｍ
で、スパーク後におけるボール径を８０μｍとしたい場
合には、スパーク時間が１５００μｓであり、スパーク
電流が３０ｍＡであるのに対して、金属細線５に串ボー
ル１０を形成するためには、スパーク電流としては、現
行の３〜４倍程度に引き上げることが必要となる。金属
細線５に串ボール１０が形成された後においては、図１
（ｃ）に示されるように、従来のボール・ボンディング
と同じ要領によって、ツール８の先端において串ボール
１０を銜え込み、第２ボンド側に移行して、外部リード
７に対するポール・ボンディングによる接合が実施され
て、当該接合部からは機械的強制力により残余の金属細
腺５がプルカットされ、次段階の接合に対応するボンデ
ィング作業の準備が開始される。以降における各段階に
おいて、ペレットと外部リードとを接合する際に用いら
れるボンディング接続方法は、上記の方法と同様であ
る。First, as in the case of the conventional example, the Al electrode pad 4 provided on the upper surface of the pellet 3 on the first bond side and the metal fine gland 5 are joined by ball bonding. Is performed by pressing a metal ball 6 formed at the tip of the Al electrode pad 4 using a torch. This joining state is shown in FIG.
This is shown in FIG. Next, FIG.
As shown in (2), referring to the coordinate data (distance between the first bond and the second bond) registered in advance in the bonder and the height condition of the metal wire 5, the metal wire for the external lead 7 on the second bonder side is referred to. Metal wire 5 required for joining 5
In consideration of the length, the tool 8 is raised to a predetermined height, and the thin metal wire 5 is fed out through the tool 8 accordingly. In this case, the expected lift amount of the tool 8 is determined by the coordinate data defining the set position of the skewer ball 10 and the height of the thin metal wire 5. Next, a spark is blown to the set position of the skewer ball on the thin metal wire 5 using the electric torch 9 to form the skewer ball 10 at the set position. As the electric torch 9 used at that time, a fixed torch type is used. Regarding this electric spark, the first bond of the conventional example has a wire diameter of 30 μm.
If the ball diameter after sparking is to be 80 μm, the spark time is 1500 μs and the spark current is 30 mA. On the other hand, in order to form the skewer ball 10 on the thin metal wire 5, Needs to be raised to about three to four times the current level. After the skewer ball 10 is formed on the thin metal wire 5, FIG.
As shown in (c), the skewer ball 10 is held at the tip of the tool 8 in the same manner as in the conventional ball bonding, and the skewer ball 10 is shifted to the second bond side to join the external lead 7 by pole bonding. Then, the remaining metal fine glands 5 are pulled off from the joint by the mechanical forcing, and preparation for a bonding operation corresponding to the next-stage joining is started. In each of the subsequent steps, the bonding connection method used when joining the pellet and the external lead is the same as the above-described method.

【００１４】即ち、上記の実施形態においては、ツール
８を上昇させて、第２ボンド側に対する接合位置に対応
する金属細線５の部分に、所定の大きさの串ボール１０
を形成することにより、当該串ボール１０によって第２
ボンド側の外部リード７と金属細線５との間の接合面積
が拡大され、これにより、第２ボンド側においても、第
１のボンド側の場合と同様にボール・ボンディングによ
る接合が行われ、これにより、金属細線と外部リードと
の接合強度を高めることが可能となり、ワイヤボンディ
ングによる接合信頼性を著しく向上させることができ
る。That is, in the above-described embodiment, the tool 8 is raised and the skewer ball 10 having a predetermined size is placed on the portion of the thin metal wire 5 corresponding to the bonding position with respect to the second bond side.
Is formed, so that the second skewer ball 10
The bonding area between the external lead 7 on the bond side and the thin metal wire 5 is increased, so that the bonding by ball bonding is performed on the second bond side as in the case of the first bond side. Accordingly, the bonding strength between the thin metal wire and the external lead can be increased, and the bonding reliability by wire bonding can be significantly improved.

【００１５】次に、本発明の第２の実施形態について説
明する。図２は、金属細線５に串ボール１０を形成する
際に、当該串ボール１０の形成に先行して、金属細線５
の串ボールの形成位置にクランプ部１１を設けて、当該
クランプ部１１により串ボール形成位置の金属細線５を
機械的に押潰すという加工処理が行われる。このように
して、金属細線５の串ボール形成位置を押潰して拡げる
ことにより、電気トーチ９より出力されるスパーク・パ
ワーが分散されることなく、金属細線５の押潰された部
分１２に集中され、所要スパーク・パワーとしては、従
来のパワーと同等レベルの低パワーにより、串ボール１
０を有効に形成することが可能となり、これによりパワ
ーが軽減されるという利点がある。なお、クランプ部１
１により、串ボールの設定位置の金属細線５を機械的に
押潰すという加工処理以外のボンディング接続方法につ
いては、第１の実施形態の場合と同様である。Next, a second embodiment of the present invention will be described. FIG. 2 shows that when the skewer ball 10 is formed on the thin metal wire 5, the skewer ball 10 is formed prior to the formation of the skewer ball 10.
Is provided at the position where the skewer ball is formed, and the clamp portion 11 mechanically crushes the thin metal wire 5 at the position where the skewer ball is formed. In this manner, the skewer ball forming position of the fine metal wire 5 is crushed and expanded, so that the spark power output from the electric torch 9 is concentrated on the crushed portion 12 of the fine metal wire 5 without being dispersed. The required spark power is as low as the conventional power.
0 can be formed effectively, which has the advantage of reducing power. In addition, the clamp part 1
1, the bonding connection method other than the processing of mechanically crushing the thin metal wire 5 at the set position of the skewer ball is the same as that of the first embodiment.

【００１６】以上説明したように、本発明においては、
第１ボンド側のボール・ボンディング終了後における、
第２ボンド側の外部リード７に金属細線５を接合するウ
ェッジ・ボンディングにおいて、金属細線５における第
２ボンド側の接合位置に、所定の大きさの串ボール１０
を形成することにより、当該第２ボンド側においてもボ
ール・ボンディングを行うことが可能となり、これによ
り、第１ボンド側と同等レベル水準のボンディング接合
が実現されて、第１ボンド側のボール・ボンディングに
おける接合強度との差異が解消されるとともに、外部リ
ード７の数十μｍ程度の傾きに対しても、接合の安定性
を十分に実現することを可能とし、ワイヤボンディング
による接合信頼性を向上させることができる。As described above, in the present invention,
After the completion of ball bonding on the first bond side,
In wedge bonding in which the metal wire 5 is bonded to the external lead 7 on the second bond side, a skewer ball 10 of a predetermined size is placed at the bonding position of the metal wire 5 on the second bond side.
Is formed, it is possible to perform ball bonding also on the second bond side, thereby realizing bonding bonding at the same level as that of the first bond side, and performing ball bonding on the first bond side. And the bonding strength of the external lead 7 can be eliminated, and the bonding stability can be sufficiently realized even with the inclination of the external lead 7 of about several tens of μm, and the bonding reliability by wire bonding is improved. be able to.

【００１７】なお、上記の説明においては、ワイヤボン
ディング接続方法の適用対象として、金属細線による接
続対象が１個のペレットと１個の外部リードである場合
についての説明を行っているが、本発明は、これに限定
されるものではなく、例えば、１本の金属細線により複
数個のペレットを縦続接続し、当該金属細線を更に外部
リードに対して接続するような場合においても、本発明
が有効に適用できることは云うまでもない。In the above description, the case where the object to be connected by the thin metal wire is one pellet and one external lead is described as an object to which the wire bonding connection method is applied. The present invention is not limited to this. For example, the present invention is effective in a case where a plurality of pellets are cascaded by one thin metal wire and the thin metal wire is further connected to an external lead. Needless to say, it can be applied to

【００１８】[0018]

【発明の効果】以上説明したように、本発明は、ペレッ
トと外部リードとを金属細線を用いて接続して構成され
る半導体装置に適用されて、当該金属細線の第２ボンド
側の外部リードに接合する位置に、所定の大きさの串ボ
ールを形成することにより接合面積を拡大化させ、当該
第２ボンド側においてもボール・ボンディングを行うこ
とを可能として、第１ボンド側と同等レベル水準のボン
ディング処理を実現することにより、その接合強度を高
めることができるとともに、外部リードの数十μｍ程度
の傾きに対しても接合の安定性を十分に実現することを
可能とし、ワイヤボンディングによる接合信頼性を向上
させることができるという効果がある。As described above, the present invention is applied to a semiconductor device constituted by connecting a pellet and an external lead using a thin metal wire, and the external lead on the second bond side of the thin metal wire is used. A skewer ball having a predetermined size is formed at a position where the second bond side is bonded, so that ball bonding can be performed also on the second bond side, and the same level level as the first bond side is achieved. By realizing the bonding process described above, the bonding strength can be increased, and the bonding stability can be sufficiently realized even with the inclination of about several tens of μm of the external lead. There is an effect that reliability can be improved.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の第１の実施形態における処理手順に対
応する半導体装置の部分外観側面図である。FIG. 1 is a partial external side view of a semiconductor device corresponding to a processing procedure according to a first embodiment of the present invention.

【図２】本発明の第２の実施形態における串ボール形成
手順に対応する部分外観側面図である。FIG. 2 is a partial external side view corresponding to a skewer ball forming procedure according to a second embodiment of the present invention.

【図３】半導体装置のワイヤボンディング状態を示す部
分外観側面図である。FIG. 3 is a partial external side view showing a wire bonding state of the semiconductor device.

【符号の説明】[Explanation of symbols]

１ アイランド ２ 半田材 ３ ペレット ４ Ａｌ電極パッド ５ 金属細線 ６ 金属ボール ７ 外部リード ８ ツール ９ 電気トーチ １０ 串ボール １１ クランプ部 １２ 押し潰された部分 DESCRIPTION OF SYMBOLS 1 Island 2 Solder material 3 Pellet 4 Al electrode pad 5 Fine metal wire 6 Metal ball 7 External lead 8 Tool 9 Electric torch 10 Skewer ball 11 Clamp part 12 Crushed part

Claims (5)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】 半導体装置のペレットと金属細線とのボ
ール・ボンディングによる接合終了後に、当該金属細線
と外部リードとの接合を行うワイヤボンディング接続方
法として、登録されている串ボールの設定位置情報を参照して、所
定のツールを介して前記金属細線を所定の長さまで繰り
出す第１のステップと、前記第１のステップにおいて繰
り出された金属細線上の前記串ボールの設定位置に、所
定の電気トーチによるスパークを飛ばすことにより、当
該串ボールを形成する第２のステップとを有して前記ペ
レットに接続されている金属細線上の外部リード接合位
置に団子形状の前記串ボールを形成した後、 切断されない状態の金属細線の途中に形成された前記串
ボールを前記ツールの先端において銜え込み、前記外部
リード側に移行する第３のステップと、 前記ツールにより前記串ボールを介して、ボール・ボン
ディングにより前記金属細線を外部リードの接合部に接
合する第４のステップと、 しかる後に、前記接合部から前記金属細線を機械的に切
断する第５のステップと、 を有する ことを特徴とする半導体装置のワイヤボンディ
ング接続方法。To 1. A after joining ends by ball bonding between the pellets and the fine metal wires of semiconductor devices, as a wire bonding connection method of performing bonding between the metal thin wires and the external lead, the setting position information of the skewers balls that are registered See, place
Repeat the metal wire to a predetermined length through a fixed tool.
In the first step of issuing and the first step.
At the set position of the skewer ball on the drawn metal wire.
By flying a spark with a constant electric torch,
And a second step of forming the skewer ball.
External lead joint on the thin metal wire connected to the let
After the dumpling-shaped skewer ball is formed on the skewer, the skewer formed in the middle of the uncut fine metal wire
Hold the ball at the tip of the tool and
A third step of shifting to the lead side, and a ball bond
The thin metal wire to the joint of the external lead
A fourth step of joining , and then mechanically cutting the thin metal wire from the joint.
Wire bonding method for a semiconductor device, characterized in that it comprises a fifth step of disconnection, the. 【請求項２】 前記第１のステップにおいて、前記串ボ
ールの設定位置情報が、接続対象のペレットと外部リー
ドとの間の距離情報と、金属細線の高さ情報とを含む情
報として指定されており、また前記所定のツールを介し
て前記金属細線を繰り出す方法が、当該ツールを上方に
上昇させることにより、上下方向に沿う状態において当
該金属細線の繰り出しを行うことを特徴とする請求項１
記載の半導体装置のワイヤボンディング接続方法。 2. In the first step, the set position information of the skewer ball is designated as information including distance information between a pellet to be connected and an external lead and height information of a thin metal wire. 2. The method according to claim 1 , wherein the method of feeding the thin metal wire through the predetermined tool includes feeding the thin metal wire in a vertical state by raising the tool upward.
A wire bonding connection method for a semiconductor device as described in the above. 【請求項３】 半導体装置のペレットと金属細線とのボ
ール・ボンディングによる接合終了後に、当該金属細線
と外部リードとの接合を行うワイヤボンディング接続方
法として、 登録されている串ボールの設定位置情報を参照して、所
定のツールを介して前記金属細線を所定の長さまで繰り
出す第１のステップと、前記第１のステップにおいて繰
り出された金属細線上の前記串ボールの設定位置に、当
該金属細線を押し潰して特定の板状形態を形成する第２
のステップと、前記板状形態に対し、所定の電気トーチ
によるスパークを飛ばすことにより、前記串ボールを形
成する第３のステップとを有して前記ペレットに接続さ
れている金属細線上の外部リード接合位置に団子形状の
前記串ボールを形成した後、 前記金属細線を、前記串ボールを介して、ボール・ボン
ディングにより前記外部リードに接合する第４のステッ
プと、 を有することを特徴とする半導体装置の ワイヤボンディ
ング接続方法。3. The semiconductor device according to claim 1, further comprising:
After the metal bonding, the metal wire
Bonding connection method for joining the external lead
As a method, referring to the set position information of the registered skewer ball, a first step of feeding out the thin metal wire to a predetermined length through a predetermined tool, and a fine metal wire fed in the first step. the set position of the skewer ball on the line, the form specific plate-shaped form by crushing the thin metal wire 2
And step of, with respect to the plate-like form, by blowing a spark with a predetermined electric torch, said to have a third step of forming a comb ball into the pellet connection
At the external lead joint position on the thin metal wire
After forming the skewer ball, the thin metal wire is passed through the skewer ball to form a ball bonnet.
4th step to be joined to the external lead by
And a wire bonding connection method for a semiconductor device . 【請求項４】 前記第４のステップが、前記ツールの先
端において前記串ボールを銜え込み、前記外部リード側
に移行するステップと、前記串ボールを介して、ボール
・ボンディングにより前記金属細線を外部リードに接合
するステップとを具備することを特徴とする請求項３記
載の半導体装置のワイヤボンディング接続方法。Wherein said fourth step, said at the tip of the tool narrowing Kuwae spit ball, the steps to migrate to the external lead side, via the skewer ball, outside the thin metal wire by ball bonding wire bonding method for a semiconductor device according to claim 3, characterized by comprising a step of bonding the lead. 【請求項５】 前記第１のステップにおいて、前記串ボ
ールの設定位置情報が、接続対象のペレットと外部リー
ドとの間の距離情報と、金属細線の高さ情報とを含む情
報として指定されており、また前記所定のツールを介し
て前記金属細線を繰り出す方法が、当該ツールを上方に
上昇させることにより、上下方向に沿う状態において当
該金属細線の繰り出しを行うことを特徴とする請求項３
記載の半導体装置のワイヤボンディング接続方法。5. In the first step, the set position information of the skewer ball is specified as information including distance information between a pellet to be connected and an external lead and height information of a thin metal wire. 4. The method according to claim 3 , wherein the method of feeding out the thin metal wire through the predetermined tool includes feeding the thin metal wire in a vertical state by raising the tool upward.
A wire bonding connection method for a semiconductor device as described in the above.
JP9232850A 1997-08-28 1997-08-28 Wire bonding connection method for semiconductor device Expired - Fee Related JP2978852B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9232850A JP2978852B2 (en) 1997-08-28 1997-08-28 Wire bonding connection method for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9232850A JP2978852B2 (en) 1997-08-28 1997-08-28 Wire bonding connection method for semiconductor device

Publications (2)

Publication Number Publication Date
JPH1174305A JPH1174305A (en) 1999-03-16
JP2978852B2 true JP2978852B2 (en) 1999-11-15

Family

ID=16945797

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9232850A Expired - Fee Related JP2978852B2 (en) 1997-08-28 1997-08-28 Wire bonding connection method for semiconductor device

Country Status (1)

Country Link
JP (1) JP2978852B2 (en)

Also Published As

Publication number Publication date
JPH1174305A (en) 1999-03-16

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