JP2884577B2 - Field effect transistor - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention is used for a field effect transistor (hereinafter, referred to as FET) in the field of semiconductor devices, and in particular, GaAs for high-power applications.
s Regarding the structure of the FET chip.

〔Overview〕

The present invention relates to a field effect transistor having a plurality of gate stripe electrodes, a drain stripe electrode and a source stripe electrode, wherein at least one of the gate stripe electrode and the drain stripe electrode is connected to and connected to each stripe electrode. By providing a body, each stripe electrode operates uniformly and the high-frequency high-output characteristics are improved.

[Conventional technology]

Conventionally, in this type of high-power GaAs FET chip,
As shown in FIG. 3, there are a plurality of gate stripe electrodes 1, a drain stripe electrode 4, and a source stripe electrode 7, and each of the stripe electrodes is formed by a well-known metallization technique. It was common to be electrically connected to 6 and 9 and focused.

[Problems to be solved by the invention]

In the conventional high-power GaAs FET chip described above,
Each of the plurality of gate stripe electrodes 1 is electrically connected to a gate bonding pad electrode 3 via a gate bus bar electrode 2. Further, the plurality of drain stripe electrodes 4 are electrically connected to the drain bonding pad electrodes 6 via the drain extraction electrodes 5 respectively.

In this case, if the number of each stripe electrode is increased in order to increase the output, it becomes difficult for each stripe electrode to operate uniformly, and the desired high output and high gain cannot be realized. In addition, there is a drawback that the stripe electrodes do not operate uniformly at high frequencies with respect to variations in inductance due to bonding wires or the like, and the desired high-frequency characteristics cannot be achieved.

The object of the present invention is to eliminate the disadvantages mentioned above,
An object of the present invention is to provide an FET in which each stripe electrode operates uniformly and can achieve desired high-frequency high-output characteristics.

[Means for solving the problem]

The present invention has a plurality of gate stripe electrodes, drain stripe electrodes and source stripe electrodes, respectively.
The FET is characterized in that at least one of the gate stripe electrode and the drain stripe electrode has a resistor for connecting and connecting the stripe electrodes to each other, in addition to a conductor connecting them.

[Action]

The resistor is formed, for example, using NiCr by connecting and connecting the respective stripe electrodes of the gate stripe electrode or the drain stripe electrode in the vicinity of the gate bus bar electrode or the drain extraction electrode.

Therefore, the respective stripe electrodes are maintained at substantially the same potential by the resistor, and operate in a balanced and uniform manner, thereby achieving the desired high-frequency high-output characteristics.

Although it is often sufficient to provide the resistor only on one of the gate stripe electrode and the drain stripe electrode, it can be provided on both electrodes if necessary.

〔Example〕

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

FIG. 1 is a plan view showing a main part of a first embodiment of the present invention,
This shows a high-frequency high-power GaAs FET chip.

In the present embodiment, each of the plurality of gate stripe electrodes 1,
The FET having the drain stripe electrode 4 and the source stripe electrode 7 has a resistor 10 in which each stripe electrode of the gate stripe electrode 1 is connected and connected near the gate bus bar electrode 2.

The plurality of gate stripe electrodes 1 are arranged in parallel at a constant pitch, and are electrically connected to the plurality of gate bonding pad electrodes 3 by the gate bus bar electrodes 2. Further, the plurality of drain stripe electrodes 4
The plurality of drain bonding pads 6 are electrically connected by the drain extraction electrode 5. Further, the plurality of source stripe electrodes 7 are similarly connected to the source extraction electrodes 8.
Is electrically connected to the plurality of source bonding pads 9. Here, the resistor 10 is formed of a material such as NiCr or TaN.

In the first embodiment, as is apparent from FIG. 1, each gate stripe electrode 1 has the same length as the resistor 10
, And a balanced input maintained at substantially the same potential is performed. As a result, a balanced operation is maintained, and a desired high-frequency high-output characteristic can be obtained.

FIG. 2 is a plan view showing a main part of a second embodiment of the present invention,
This shows a high-frequency high-power GaAs FET chip. The second embodiment has the same basic configuration as the first embodiment of FIG.
In the second embodiment, a resistor 10 made of a material such as NiCr or TaN is formed by connecting not the gate stripe electrode 1 but the drain stripe electrode 4 all in the vicinity of the drain extraction electrode 5. .

Therefore, in the second embodiment, as is apparent from FIG. 2, each drain stripe electrode 4 is connected to the resistor 10 with the same length, is maintained at substantially the same potential, and a balanced output is performed. As a result, the balance operation is maintained, and desired high-frequency high-output characteristics can be obtained.

The feature of the present invention is that the resistor shown in FIGS.
I have 10

〔The invention's effect〕

As described above, according to the present invention, by connecting at least one of the gate stripe electrode and the drain stripe electrode with one resistor, each stripe electrode operates in a uniformly balanced manner, This has the effect of improving high frequency high output characteristics.

[Brief description of the drawings]

FIG. 1 is a plan view showing a main part of a first embodiment of the present invention. FIG. 2 is a plan view showing a main part of a second embodiment of the present invention. FIG. 3 is a plan view showing a main part of a conventional example. 1 ... gate stripe electrode, 2 ... gate bus bar electrode, 3 ... gate bonding pad electrode, 4 ... drain stripe electrode, 5 ... drain extraction electrode, 6 ...
... Drain bonding pad electrode, 7... Source stripe electrode, 8... Source extraction electrode, 9... Source bonding pad electrode, 10.

Continuation of the front page (58) Field surveyed (Int.Cl. ⁶ , DB name) H01L 21/337-21/338 H01L 27/095 H01L 27/098 H01L 29/775-29/778 H01L 29/50-29 / 812

Claims (1)

(57) [Claims] 1. A field effect transistor having a plurality of gate stripe electrodes, a drain stripe electrode and a source stripe electrode, wherein at least one of the gate stripe electrode and the drain stripe electrode is connected to a conductor connecting them. Separately, a field-effect transistor has a resistor for electrically connecting and connecting the stripe electrodes to each other so that the stripe electrodes operate uniformly.