JP2811743B2 - Optical memory - Google Patents
Optical memoryInfo
- Publication number
- JP2811743B2 JP2811743B2 JP1115413A JP11541389A JP2811743B2 JP 2811743 B2 JP2811743 B2 JP 2811743B2 JP 1115413 A JP1115413 A JP 1115413A JP 11541389 A JP11541389 A JP 11541389A JP 2811743 B2 JP2811743 B2 JP 2811743B2
- Authority
- JP
- Japan
- Prior art keywords
- optical memory
- film
- atomic
- gold
- reflective film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003287 optical effect Effects 0.000 title claims description 17
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 10
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 6
- 229910052702 rhenium Inorganic materials 0.000 claims description 2
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 2
- 230000001681 protective effect Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920005668 polycarbonate resin Polymers 0.000 description 2
- 239000004431 polycarbonate resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Optical Record Carriers And Manufacture Thereof (AREA)
Description
【発明の詳細な説明】 (産業上の利用分野) 本発明は音響機器やコンピュータの周辺機器などに用
いられる光記憶体に関する。Description: TECHNICAL FIELD The present invention relates to an optical storage device used for audio equipment, computer peripheral equipment, and the like.
(従来の技術) 近年、光記憶体の一つであるコンパクトディスク(以
下、CDと略す。)が広く普及している。このCDの応用技
術として、CDにコンピュータデータを記録したCD−ROM
が普及し始めており、これらの記憶体に対して従来にも
増して、高温・高湿下での保存性の高いものが望まれて
いる。(Prior Art) In recent years, a compact disk (hereinafter, abbreviated as CD), which is one of optical storage media, has been widely used. As an applied technology of this CD, CD-ROM which recorded computer data on CD
Are increasingly popular, and there is a demand for a storage medium having high storage stability under high temperature and high humidity.
(発明が解決しようとする課題) 従来、光記憶体は、ガラスやポリカーボネート樹脂等
からなる下地体上に、アルミニウムや金等からなる反射
膜が形成され、その反射膜上に樹脂等の保護膜が被覆さ
れた物で構成されている。このような従来の光記憶体を
高温・高湿の環境下においた場合、反射膜材料がアルミ
ニウムの場合は腐食が生じ、また金の場合は下地体から
剥離する。反射膜がこのように変化すると、信号読み取
りの指標とされるエラーレートが増加し、上記に記した
ニーズに適応できないとう問題があった。(Problems to be Solved by the Invention) Conventionally, in an optical memory, a reflection film made of aluminum, gold, or the like is formed on a base body made of glass, polycarbonate resin, or the like, and a protective film such as a resin is formed on the reflection film. Are coated. When such a conventional optical storage medium is placed in a high-temperature, high-humidity environment, corrosion occurs when the reflection film material is aluminum, and peels off from the base body when the reflection film material is gold. When the reflection film changes in this way, the error rate, which is an index for signal reading, increases, and there is a problem that the above-mentioned needs cannot be met.
本発明は以上述べたような従来の事情に対処してなさ
れたもので、金の反射膜の優れた耐腐食性を保つと同時
に金の反射膜の下地体への密着性を向上させることによ
り、耐候性を高めた光記憶体を提供することを目的とす
る。The present invention has been made in view of the conventional circumstances as described above, and by improving the adhesion of the gold reflective film to the base body while maintaining the excellent corrosion resistance of the gold reflective film. It is another object of the present invention to provide an optical memory body having improved weather resistance.
(課題を解決するための手段) 本発明は、反射率が70%以上の再生専用光記憶体にお
いて、下地体と、前記下地体上に被覆された金と少なく
ともタンタルを0原子%を超えて25原子%以内含み、か
つレニウムを含まない反射膜とからなることを特徴とす
る光記憶体。タンタルの含有量が限定されるのは、この
範囲内においてCDの規格である70%の反射率が確保され
るためである。(Means for Solving the Problems) According to the present invention, in a read-only optical memory having a reflectance of 70% or more, the content of a base, gold and at least tantalum coated on the base exceeds 0 atomic%. An optical storage element comprising a reflection film containing up to 25 atomic% and not containing rhenium. The reason why the content of tantalum is limited is that a reflectance of 70%, which is a standard of CD, is secured within this range.
本発明の光記憶体は、例えば次のように作製される。 The optical memory of the present invention is manufactured, for example, as follows.
まず、この下地体としては、例えば強化ガラスに酸化
珪素や酸化チタンや窒化珪素などを被覆したもの、石英
ガラス、ゾルゲル膜被覆ガラス、ポリオレフィン樹脂、
アクリル樹脂、弗素樹脂、ポリカーボネート樹脂などが
用いられる。First, as the base body, for example, a glass obtained by coating a silicon oxide, a titanium oxide, a silicon nitride, or the like on a tempered glass, a quartz glass, a glass coated with a sol-gel film, a polyolefin resin,
Acrylic resin, fluorine resin, polycarbonate resin and the like are used.
次に、上記下地体の上に、反射膜として、金と少なく
ともタンタルを0原子%を越えて25原子%以内含む材料
を高周波マグネトロンスパッタ法、イオンプレーティン
グ法、プラズマCVD法、真空蒸着法等により10〜500nmの
膜厚で被覆する。Next, a high-frequency magnetron sputtering method, an ion plating method, a plasma CVD method, a vacuum deposition method, etc., on the base body, as a reflective film, a material containing gold and at least tantalum in an amount of more than 0 atomic% and not more than 25 atomic%. To a thickness of 10 to 500 nm.
さらに、必要に応じて上記反射膜上に各種酸化物や窒
化物や樹脂等からなる保護膜を形成することにより、本
発明の光記憶体が得られる。Further, if necessary, a protective film made of various oxides, nitrides, resins, or the like is formed on the reflective film, thereby obtaining the optical memory of the present invention.
(作用) 金と少なくともタンタルを0原子%を越えて25原子%
以内含む反射膜は、下地体及び保護膜に対して強い密着
力を有すると共に、耐腐食性にも優れている。このた
め、下地体から反射膜が剥離することや反射膜から保護
膜が剥離することがなく、高い信頼性を有する光記憶体
が得られる。(Action) Gold and at least tantalum exceed 0 atomic% and 25 atomic%
The reflection film included in the film has strong adhesion to the base body and the protective film, and also has excellent corrosion resistance. For this reason, the reflective film does not peel off from the base body or the protective film does not peel off from the reflective film, so that an optical memory having high reliability can be obtained.
(実施例) 以下に表及び図面を参照して本発明を詳細に説明す
る。(Example) Hereinafter, the present invention will be described in detail with reference to tables and drawings.
第1表に示す材質の下地体上に、第1表に示す組成の
反射膜を、スパッタリング法でそれぞれ第1表に示す膜
厚で形成した。次いで、その反射膜上に第1表に示す材
質の保護膜を形成して5個の光記憶体を作製した。A reflective film having the composition shown in Table 1 was formed on a base body made of the material shown in Table 1 by sputtering to a thickness shown in Table 1 respectively. Next, a protective film made of the material shown in Table 1 was formed on the reflective film to produce five optical storage media.
第1図は以上のようにして作製した光記憶体の一実施
例を示す部分断面図である。図中、1は下地体、2は反
射膜、3は保護膜である。FIG. 1 is a partial cross-sectional view showing one embodiment of the optical storage body manufactured as described above. In the figure, 1 is a base body, 2 is a reflective film, and 3 is a protective film.
次に、これらの試料、アルミニウムを反射膜とする従
来品A、金を反射膜とする従来品Bについて、温度80
℃、相対湿度90%の耐環境性試験を1ヶ月間行い、信号
の良否の指標となるエラーレートを測定した。その結果
を第2表に示す。Next, these samples, conventional product A using aluminum as a reflective film, and conventional product B using gold as a reflective film have a temperature of 80 ° C.
An environmental resistance test at 90 ° C. and a relative humidity of 90% was performed for one month, and an error rate as an index of signal quality was measured. Table 2 shows the results.
第2表に示すように、初期においてはいずれの試料も
エラーレートは5×10-5であるが、1ヶ月間の耐環境性
試験後、本発明の試料のエラーレートは多少の劣化がみ
れるものの従来品とは比較にならないほど良好であっ
た。As shown in Table 2, the error rate of each sample is 5 × 10 −5 at the initial stage, but after one month of the environmental resistance test, the error rate of the sample of the present invention is slightly deteriorated. However, it was so good that it could not be compared with the conventional product.
(発明の効果) 以上、詳細に述べたように、本発明の光記憶体は、金
に少なくともタンタルを0原子%を越えて25原子%以内
含む材料を反射膜として形成するによって、その反射膜
と下地体との密着性及びその反射膜と保護膜との密着性
が高められると共に、耐腐食性にも優れており、従来品
よりはるかに高い信頼性を有するものである。 (Effects of the Invention) As described above in detail, the optical storage element of the present invention is formed by forming a material containing at least tantalum in gold at more than 0 atomic% and up to 25 atomic% as a reflective film. The adhesion between the substrate and the base body and the adhesion between the reflection film and the protective film are improved, and the corrosion resistance is excellent, and the reliability is much higher than that of the conventional product.
第1図は本発明の光記憶体の一実施例を示す部分断面図
である。 1……下地体、2……反射膜、3……保護膜。FIG. 1 is a partial cross-sectional view showing one embodiment of the optical storage body of the present invention. 1 ... underlying body, 2 ... reflective film, 3 ... protective film.
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.6,DB名) G11B 7/24 C23C 24/00 - 30/00 C23C 14/00 - 14/58 C23C 16/00 - 16/56──────────────────────────────────────────────────続 き Continued on the front page (58) Fields investigated (Int. Cl. 6 , DB name) G11B 7/24 C23C 24/00-30/00 C23C 14/00-14/58 C23C 16/00-16 / 56
Claims (1)
いて、下地体と、前記下地体上に被覆された金と少なく
ともタンタルを0原子%を超えて25原子%以内含み、か
つレニウムを含まない反射膜とからなることを特徴とす
る光記憶体。1. A read-only optical memory having a reflectance of 70% or more, comprising a base, gold and at least tantalum coated on the base in an amount exceeding 0 atomic% and not more than 25 atomic%, and rhenium. An optical memory, comprising a reflection film containing no.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1115413A JP2811743B2 (en) | 1989-05-08 | 1989-05-08 | Optical memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1115413A JP2811743B2 (en) | 1989-05-08 | 1989-05-08 | Optical memory |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH02294953A JPH02294953A (en) | 1990-12-05 |
JP2811743B2 true JP2811743B2 (en) | 1998-10-15 |
Family
ID=14661957
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1115413A Expired - Lifetime JP2811743B2 (en) | 1989-05-08 | 1989-05-08 | Optical memory |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2811743B2 (en) |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2507592B2 (en) * | 1989-04-26 | 1996-06-12 | 帝人株式会社 | Optical recording medium |
-
1989
- 1989-05-08 JP JP1115413A patent/JP2811743B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH02294953A (en) | 1990-12-05 |
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