JP2744108B2 - Hybrid integrated circuit device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a hybrid integrated circuit device, and is particularly suitable for a heat dissipation structure required for high output.

(Prior art) One or more types selected from passive elements, active elements or circuit components are monolithically (Mo)
The degree of integration of integrated circuit elements which are to be built nolythic tends to increase more and more as represented by recent DRAMs. On the other hand, even in a hybrid integrated circuit device in which an L component or the like that cannot be monolithically formed on a semiconductor substrate is formed by a hybrid method, a packing density (Packing density) is required.
In addition, products with improved ing densities have been developed and their uses have been remarkably increased.

As described above, there is a measure for heat dissipation as a problem of a hybrid integrated circuit element accompanied by an increase in the degree of integration, and a heat sink is used as one of the solutions. To explain this with reference to the cross-sectional view of FIG. 1 showing the main part, for example, components 2... Required for an electronic circuit are mounted on one surface of an alumina ceramics substrate 1 and a heat sink, that is, The metal plate 3 is integrated via an adhesive layer 4.

By the way, the components 2 formed on the alumina ceramic substrate 1 and the like in a hybrid manner include an integrated circuit element, an individual semiconductor element, sometimes an L component, and also a resistor which is adjusted to a predetermined value by a so-called trimming method. In the present invention, a substrate on which such various components are mounted is referred to as a thick film substrate. On the other hand, a method of mounting various components on both sides of a thick film substrate (see FIG. 2) is often used in order to improve the degree of integration of the hybrid integrated circuit element. in this case,
A semiconductor element or the like is arranged on the exposed surface of the alumina ceramic substrate 1, that is, a surface on which the heat-dissipating metal plate 5 is not installed, and a resistor and a wiring layer to be trimmed are installed on the other surface. Through holes formed through the thickness direction of the alumina ceramic substrate 1 (Through Ho
le) Use 6

By the way, the wiring layer formed on both surfaces of the alumina ceramic substrate 1 by a so-called screen printing method is protected by covering with a thin glass (Glass) layer. Protected. A wiring layer is formed on the alumina ceramic substrate 1 constituting the wall surface of the through hole 6 by, for example, a plating method, and is electrically connected to the wiring layers provided on both sides to prepare for forming a predetermined electronic circuit. The wiring layer attached to the through-hole 6 is also covered with a protective glass layer to ensure insulation. The heat-dissipating metal plate 5 is integrated with the alumina ceramics substrate 1 by the adhesive layer 4. In general, a crimping step is performed last to ensure the fixation.

(Problems to be Solved by the Invention) In a hybrid integrated circuit device of the type using both surfaces of a thick film substrate, the entire flat surface of the heat dissipation metal plate 5 cannot be used for heat dissipation. This is because the glass layer covering the wiring layer formed in the vicinity of the corner of the through hole 6 intersecting with the surface of the thick film substrate 1 and the other surface may be peeled off or thinned by the crimping process and the insulating property may be impaired. In order to solve the problem, the concave portion 7 is provided in the metal plate 5 for heat radiation corresponding to the vicinity (see FIG. 3). For this reason, in a mold using both sides of the thick film substrate 1,
In addition to the disadvantage that the heat dissipation efficiency is poor and the manufacturing unit price increases,
During the manufacturing process, the two need to be aligned, resulting in a disadvantage that the number of steps is increased. In addition, when a large current flows through the resistor provided on the other surface of the thick film substrate 1 to generate heat, there is a problem that heat dissipation is impaired.

The present invention has been made under such circumstances, and it is an object of the present invention to improve the heat radiation efficiency of a hybrid integrated circuit device in which electronic circuit components are mounted on both surfaces of a thick film substrate.

[Composition of the Invention] (Means for Solving the Problems) A metal plate for heat dissipation, a thick film substrate arranged to face the metal plate for heat dissipation, and circuit patterns provided on both surfaces of the thick film substrate,
A through-hole installed through the thickness direction of the thick film substrate, a wiring layer connected to the circuit pattern and formed through the snow hole, and an insulating layer protecting the wiring layer formed in the snow hole. The features of the hybrid integrated circuit device according to the present invention include a heat conductive / insulating substrate integrally located between the heat radiating metal plate and the thick film substrate, and a metal container that covers these and is fixed to the heat radiating metal plate. There is.

(Operation) The hybrid integrated circuit device according to the present invention may be used, for example, for a vehicle, and is naturally compact.
When a certain electronic circuit requires a large amount of heat during operation and a resistor for energizing a large current, for example, a giant transistor (hereinafter referred to as G-Tr) must be installed in a given electronic circuit. There is also. In the conventional method of installing G-Tr, etc., it is common to use a thick film substrate and another substrate, which increases the required area and installs it in a fixed volume or area such as for vehicles. It is inconvenient to do so. Furthermore, the hybrid integrated circuit device according to the present invention requires a resistor that generates heat during operation, and is disposed on the back surface of the thick film substrate, that is, on the side opposite to the surface on which the necessary circuit components are mounted. In the case of such a hybrid integrated circuit element that needs to be mounted within a limited volume or area, it is necessary to install necessary circuit components on a thick-film substrate from the viewpoint of improving the degree of integration. A method of arranging a heat conductive / insulating substrate between a thick film substrate and a heat dissipating metal plate is adopted. In addition, hybrid integrated circuit devices such as those for vehicles are protected by a metal container and protected from severe environments such as-
It is designed to withstand use between 40 ° C and 150 ° C.

(Embodiment) An embodiment according to the present invention will be described with reference to FIGS. That is, a wiring layer (not shown) made of a conductive metal is provided on both surfaces of a thick film substrate 10 made of a ceramic having a thickness of about 0.8 mm by a screen printing method, and components necessary for an electronic circuit are mounted on one surface thereof. . Further, through holes 11 penetrating in the thickness direction of the thick film substrate 10 are provided, and the wiring layers are coated by, for example, a plating method so as to conduct the wiring layers formed on both surfaces. Thick film substrate after such treatment
On the back surface of the device 10, that is, a surface on which a semiconductor element, which will be described later, is not installed, a resistor 12 that generates heat during operation is formed by connecting to a wiring layer. In the prior art, the resistor 12 is covered and protected by an insulating layer such as a glass layer, but is not applied to the resistor layer 12 in the present invention. Further, in addition to a resin-encapsulated integrated circuit element, a G-Tr, or the like as an electronic circuit component, depending on the L component and the location, a coil may be installed on a surface other than the resistor 12 by a so-called surface mounting method. When installing the G-Tr, instead of the ceramic thick film substrate 10, a method of interposing cuprous oxide or the like on an aluminum nitride substrate, or a method using molybdenum (Mo
(lybdenum) plate member (not shown). A substrate made of aluminum nitride is fixed to the thick film substrate 10 using an adhesive layer. On the thick film substrate 10 on which the circuit components are mounted as described above, a heat conductive / insulating substrate such as a ceramic substrate 13 and a heat dissipating metal plate 14 made of, for example, copper or a copper alloy are integrally formed by conductive adhesive layers 155 and 15. Secures to form the majority of the hybrid integrated circuit device. As shown in FIG. 4, a metal container 16 is hermetically sealed at the end of the thick film substrate 10 constituting the surface of the three-layer laminate.
rmetic Seal) to complete the hybrid integrated circuit device for vehicles.

FIG. 3 is a perspective view showing a state before the metal container 16 is attached.

The thickness of the thick film substrate 10 and the heat dissipation metal plate 14 are both about 0.8 mm to 0.635 mm as described above, and the length is 3 to 5 mm.
The size of the metal container 16 is generally about 40Φ.

[Effect of the Invention] In the present invention, heat radiation from a thick-film substrate printed on both sides is
It can be performed with the same efficiency as a single-side printed substrate. In addition, since the heat conductive / insulating substrate inserted between the substrate and the heat sink metal substrate has excellent insulation and heat dissipation, it is not necessary to cover the thick film substrate on the metal substrate side with a protective material. Not only is there an advantage that the manufacturing unit price is low, but also the heat radiation of the resistor installed on the thick film substrate side can be ensured. Furthermore, in the production of hybrid integrated circuit elements, since a thick film substrate, a heat conductive / insulating substrate, and a metal substrate are integrated with an adhesive, there is an advantage that no special alignment is required. Is brought about.

[Brief description of the drawings]

1 to 3 are cross-sectional views of a conventional hybrid integrated circuit device, FIG. 4 is a perspective view schematically showing a hybrid integrated circuit device according to the present invention, and FIG. 5 is a hybrid integrated device according to the present invention. It is sectional drawing of a circuit element. 1, 10: ceramic substrate, thick film substrate, 2: component, 3, 14: metal plate for heat dissipation, 4, 15: adhesive, 6, 11: through hole, 7: recess, 5, 12: resistance, 13 : Heat conductive / insulating substrate, 16: Metal container.

 ──────────────────────────────────────────────────続 き Continuation of front page (56) References JP-A-63-127590 (JP, A) JP-A-60-109349 (JP, U) JP-A-59-10770 (JP, Y2)

Claims (1)

(57) [Claims] 1. A heat-dissipating metal plate, a thick-film substrate disposed to face the heat-dissipating metal plate, circuit patterns provided on both sides of the thick-film substrate, and a through-hole extending through the thickness direction of the thick-film substrate. A wiring layer formed by connecting the circuit pattern and forming through the through hole; a heat conductive / insulating substrate integrally disposed between the heat dissipating metal plate and the thick film substrate; And a metal container fixed to the heat-dissipating metal plate.