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JP2684745B2 - Quasi-planar Josephson junction device - Google Patents

Quasi-planar Josephson junction device

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Publication number
JP2684745B2
JP2684745B2 JP1033409A JP3340989A JP2684745B2 JP 2684745 B2 JP2684745 B2 JP 2684745B2 JP 1033409 A JP1033409 A JP 1033409A JP 3340989 A JP3340989 A JP 3340989A JP 2684745 B2 JP2684745 B2 JP 2684745B2
Authority
JP
Japan
Prior art keywords
superconducting thin
josephson junction
thin film
quasi
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP1033409A
Other languages
Japanese (ja)
Other versions
JPH02213176A (en
Inventor
純一 喜多
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Original Assignee
Shimadzu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp filed Critical Shimadzu Corp
Priority to JP1033409A priority Critical patent/JP2684745B2/en
Publication of JPH02213176A publication Critical patent/JPH02213176A/en
Application granted granted Critical
Publication of JP2684745B2 publication Critical patent/JP2684745B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Description

【発明の詳細な説明】 <産業上の利用分野> 本発明はジョセフソン接合を有する素子に関し、更に
詳しくは、準平面型のジョセフソン接合素子に関する。
The present invention relates to a device having a Josephson junction, and more particularly to a quasi-planar Josephson junction device.

なお、本発明は、超高感度磁場計測用のSQUIDや、超
高感度電磁波検出器等、ジョセフソン効果を利用したあ
らゆるデバイスに応用可能である。
The present invention can be applied to any device using the Josephson effect, such as SQUID for ultra-sensitive magnetic field measurement and ultra-sensitive electromagnetic wave detector.

<従来の技術> 良好な性能のジョセフソン接合を得るためには、その
ブリッジ長(弱接合部の長さ)を、理想的には使用する
ブリッジ材料のコヒーレント長の3〜5倍程度にすべき
であること、また、この理想的なブリッジ長が得られな
くとも、これにできるだけ近づくようにブリッジ長を短
くすべきであることが知られている。
<Prior Art> In order to obtain a Josephson junction with good performance, the bridge length (the length of the weak junction) is ideally set to about 3 to 5 times the coherent length of the bridge material used. It is known that this should be done, and even if this ideal bridge length cannot be obtained, the bridge length should be shortened so as to come as close as possible to this.

Nbを用いたジョセフソン接合において、その理想的な
ブリッジ長は数百Å程度となる。このような極めて短い
ブリッジ長を再現性よく得るためには、準平面型のジョ
セフソン接合が有利である。
In the Josephson junction using Nb, the ideal bridge length is about several hundred Å. In order to obtain such an extremely short bridge length with good reproducibility, the quasi-plane type Josephson junction is advantageous.

準平面型のジョセフソン接合は、平坦な基板表面に形
成された超電導薄膜の上面に、絶縁層を介して別の超電
導薄膜を積層形成し、上方の超電導薄膜の端面部におい
て、双方の超電導薄膜にまたがるブリッジを形成した構
造であり、比較的容易にコントロールできる膜厚寸法に
よってブリッジ長を決定することができ、平面上の微細
加工に頼る平面型のジョセフソン接合に比して極めて有
利である。
The quasi-planar type Josephson junction is a superconducting thin film formed on a flat substrate surface, and another superconducting thin film is laminated on the upper surface of the superconducting thin film via an insulating layer. It is a structure in which a bridge spans over the entire length, and the bridge length can be determined by the film thickness dimension that can be controlled relatively easily, which is extremely advantageous compared to the planar Josephson junction that relies on microfabrication on a plane. .

<発明が解決しようとする課題> ところで、YBCOに代表される酸化物高温超電導体を用
いてジョセフソン接合素子を作る場合、以下に示す理由
によって、Nb系等の従来の超電導体を用いた場合のよう
な良好な準平面型のジョセフソン接合を得ることが困難
である。
<Problems to be Solved by the Invention> By the way, when a Josephson junction element is formed using an oxide high-temperature superconductor represented by YBCO, a conventional superconductor such as Nb is used for the following reason. It is difficult to obtain a good quasi-plane type Josephson junction such as.

まず、YBCO等の高温超電導薄膜は、一般に不安定で拡
散しやすく、良好な状態で積層形成すること自体が容易
でない。
First, a high temperature superconducting thin film such as YBCO is generally unstable and easily diffused, and it is not easy to form a laminate in a good state.

また、現在の製膜技術で得られる高温超電導薄膜は、
その表面平坦度が100Å程度と悪く、絶縁層を介して相
互に積層した場合にピンコンタクトが生じ易い。
In addition, the high temperature superconducting thin film obtained by the current film forming technology is
The surface flatness is as bad as about 100 Å, and pin contacts are likely to occur when they are laminated with an insulating layer in between.

更に、酸化物高温超電導体は水に対して劣化しやすい
等、加工上の制約があり、Nb系超電導体のように比較的
自由に工程を選択することはできない。
Furthermore, the oxide high-temperature superconductor is subject to processing restrictions such as deterioration with water, and the process cannot be selected relatively freely, unlike the Nb-based superconductor.

本発明はこのような点に鑑みてなされたもので、酸化
物高温超電導体を用いても高性能で、かつ、製造の再現
性並びに歩留りが良好な準平面型ジョセフソン接合素子
の提供を目的としている。
The present invention has been made in view of the above circumstances, and an object thereof is to provide a quasi-planar Josephson junction device having high performance even when an oxide high-temperature superconductor is used, and having good manufacturing reproducibility and yield. I am trying.

<課題を解決するための手段> 上記の目的を達成するため、本発明では、実施例に対
応する第1図に示すように、基板1の表面に段差を設け
るとともに、その上段側平面に、一端が段部1aの端面に
至って側方に開放する溝1bを形成している。そして、基
板1の表面には、段部1aを挟む上段側および下段側平面
にそれぞれ超電導薄膜2および3を形成して、この超電
導薄膜2と3が溝1a内に侵入している超電導体を介して
相互に接合されるように構成している。
<Means for Solving the Problems> In order to achieve the above-mentioned object, in the present invention, as shown in FIG. 1 corresponding to the embodiment, a step is provided on the surface of the substrate 1 and the upper plane thereof is A groove 1b is formed, one end of which reaches the end face of the stepped portion 1a and is opened laterally. Then, on the surface of the substrate 1, superconducting thin films 2 and 3 are formed on the upper and lower planes sandwiching the stepped portion 1a, respectively, and the superconducting thin films 2 and 3 penetrate the superconductors invading the groove 1a. It is configured to be joined to each other through.

<作用> 基板1の上段側平面に溝1bを形成しておくことによ
り、超電導薄膜2の成膜時に超電導体が溝1b内に入り込
む。
<Operation> By forming the groove 1b on the upper surface of the substrate 1, the superconductor enters the groove 1b when the superconducting thin film 2 is formed.

溝1bの一端を段部1aの端面にまで至らせておき、超電
導薄膜2,3を成膜して溝1b内の超電導体と下段側の超電
導薄膜3が連通するようにすると、溝1b内の超電導体は
超電導薄膜2と3をつなぐ弱接合部Jとなり、積層を施
すことなく準平面型のジョセフソン接合が得られる。
If one end of the groove 1b is extended to the end face of the step portion 1a and the superconducting thin films 2 and 3 are formed so that the superconductor in the groove 1b communicates with the superconducting thin film 3 in the lower side, The superconductor is a weak junction J connecting the superconducting thin films 2 and 3, and a quasi-planar Josephson junction can be obtained without stacking.

<実施例> 第1図は本発明実施例の斜視図である MgO製基板1の表面には段差が設けられており、段部1
aを境界として上段側と下段側の平面を有している。そ
の上段側の平面には、段差寸法よりも浅く、かつ、一端
が段部1aにおいて側方に開放された溝1bが形成されてい
る。
<Embodiment> FIG. 1 is a perspective view of an embodiment of the present invention. A step is provided on the surface of a MgO substrate 1 and a step portion 1 is formed.
It has upper and lower planes with a as the boundary. A groove 1b, which is shallower than the step size and whose one end is open laterally at the step portion 1a, is formed on the plane on the upper step side.

そして、このような基板1の上、下段側の両平面上
に、その段差寸法よりも薄い膜厚の一様な超電導薄膜2
および3が形成されている。上段側の超電導薄膜2はそ
の一部が溝1b内に侵入しており、また、下段側の超電導
薄膜3の上面は溝1bの底面よりも高位に達し、これによ
って超電導薄膜2と3は溝1b内に侵入している超電導体
によってウィークに接合されている。すなわち、溝1b内
の超電導体を弱接合部Jとして超電導薄膜2と3が接合
されたジョセフソン接合素子を得ている。
Then, the superconducting thin film 2 having a uniform film thickness smaller than the step size is formed on both the upper and lower planes of the substrate 1.
And 3 are formed. A part of the superconducting thin film 2 on the upper side penetrates into the groove 1b, and the upper surface of the superconducting thin film 3 on the lower side reaches a higher position than the bottom surface of the groove 1b. It is weakly joined by a superconductor penetrating into 1b. That is, the Josephson junction element in which the superconducting thin films 2 and 3 are joined using the superconductor in the groove 1b as the weak junction J is obtained.

次に、この実施例の製造方法を説明する。第2図乃至
第5図はその製造手順の説明図である。
Next, the manufacturing method of this embodiment will be described. 2 to 5 are explanatory views of the manufacturing procedure.

まず、第2図に側面図で示すような厚さ0.5mm程度のM
gO(100)基板1を用意し、その表面に第3図に示すよ
うな500nmの段差をつけた。この段差のつけ方は、例え
ばAZ系レジストを基板1の表面に一様に塗布した後、フ
ォトリソグラフィによってその略中央部を境に片側を残
して他側を除去し、次いで残されたレジスト膜をマスク
としてArイオンミリングを施す方法を採用することがで
きる。
First, as shown in the side view in FIG.
A gO (100) substrate 1 was prepared, and a step of 500 nm as shown in FIG. 3 was formed on the surface thereof. This step is formed by, for example, uniformly applying an AZ-based resist on the surface of the substrate 1, and then photolithographically removing one side with the substantially central portion as a boundary and the other side, and then leaving the remaining resist film. A method of performing Ar ion milling using as a mask can be adopted.

次に、第4図に斜視図で示すように、上段側の平面
に、一端が段部1aで側方に開放するよう、深さ250nm,幅
1μmの溝1bを長さ20μm程度に亘って形成した。その
形成方法としては、EB露光ポジレジストを使用して1μ
m幅のマスクを形成し、Arイオンミリングを行う方法を
採用することができる。
Next, as shown in a perspective view in FIG. 4, a groove 1b having a depth of 250 nm and a width of 1 μm is extended to a length of about 20 μm in the upper plane so that one end is opened laterally at the step 1a. Formed. As a method for forming it, EB exposure positive resist was used to
A method of forming an m-width mask and performing Ar ion milling can be adopted.

そして最後に、基板1の表面全体に一様な厚さ350nm
の超電導薄膜を成膜した。この超電導薄膜は例えばYBCO
薄膜であって、スパッタリングによって成膜することが
できる。そのスパッタ条件は、基板温度620℃,雰囲気
ガスAr/O2=40/60,圧力20mTorrとし、ターゲットの組成
はY:Ba:Cu=1:6.7:18.3で30Å/min程度のレートで成膜
できる。
And finally, a uniform thickness of 350 nm on the entire surface of the substrate 1.
Was formed into a superconducting thin film. This superconducting thin film is, for example, YBCO
It is a thin film and can be formed by sputtering. The sputtering conditions were as follows: substrate temperature 620 ° C., atmospheric gas Ar / O 2 = 40/60, pressure 20 mTorr, target composition Y: Ba: Cu = 1: 6.7: 18.3, film formation at a rate of about 30 Å / min. it can.

第5図にこの成膜後の第4図V方向から見た端面図を
示すように、成膜過程において溝1b内に超電導体が入り
込むとともに、段差の存在によって超電導薄膜は上段側
の薄膜2と下段側の薄膜3とに分離され、これらは溝1b
内に入り込んだ超電導体のみによってウィークに接合さ
れた状態となり、成膜後に直ちに第1図に示す構造の素
子が得られる。
As shown in FIG. 5 which is an end view as seen from the direction V in FIG. 4 after the film formation, the superconductor enters the groove 1b during the film formation process and, due to the presence of the step, the superconducting thin film is formed on the upper side thin film 2 And the thin film 3 on the lower side, which are separated by the groove 1b.
Only the superconductor that has entered the inside makes it in a state of being weakly joined, and an element having the structure shown in FIG. 1 can be obtained immediately after film formation.

この製造方法によって得られた素子においては、弱接
合部Jは超電導薄膜2,3の成膜過程でこれらと一体的に
形成されることに特に注目すべきである。すなわち、従
来の準平面型ジョセフソン接合素子では、積層された2
つの超電導薄膜の表面に、別途ブリッジを形成して弱接
合部を得ているが、YBCO等の酸化物高温超電導薄膜で
は、一般にその表面に超電導を示さない、いわゆる表面
劣化層が生じ、ブリッジ部を先に成膜されている超電導
薄膜上に超電導的にコンタクトさせて作成することが困
難であるのに対し、上記した製法ではこのような惧れは
ない。
It should be particularly noted that in the device obtained by this manufacturing method, the weak junction J is integrally formed with the superconducting thin films 2 and 3 during the film forming process. That is, in the conventional quasi-planar Josephson junction element, the stacked two
Although a bridge is separately formed on the surface of the two superconducting thin films to obtain a weak junction, the oxide high-temperature superconducting thin film such as YBCO generally has a so-called surface deterioration layer that does not show superconductivity on the surface and the bridge part is formed. While it is difficult to make the superconducting film on the superconducting thin film that has been previously formed in a superconducting manner, the above-mentioned manufacturing method does not have such a fear.

また、この製造方法では、超電導薄膜2,3の成膜後に
パターニング等の工程が一切不要であり、水に対して劣
化しやすい酸化物高温超電導体を用いる場合に特に有効
である。
In addition, this manufacturing method does not require any step such as patterning after the formation of the superconducting thin films 2 and 3, and is particularly effective when using an oxide high temperature superconductor which is easily deteriorated with respect to water.

そして、本発明の素子では、その弱接合長は基板1の
段差、溝1bの深さと幅、および超電導薄膜3の膜厚をパ
ラメータとして決定され、例えば膜厚の加減によって所
望の弱接合長が得られる。
Then, in the element of the present invention, the weak junction length is determined by using the step of the substrate 1, the depth and width of the groove 1b, and the film thickness of the superconducting thin film 3 as parameters. can get.

なお、基板1の段部1aの形状を、第6図に示すよう
に、オーバーハングを付した形状としておくことによっ
て、超電導薄膜2,3の分離や溝1bに侵入した超電導体と
超電導薄膜3との接合がより容易化されて望ましい。こ
のようなオーバーハングを付するには、イオンミリング
時におけるArイオンの射照方向に角度を付すことによっ
て実現できる。
As shown in FIG. 6, the stepped portion 1a of the substrate 1 has an overhanging shape so that the superconducting thin films 2 and 3 are separated from each other and the superconducting thin film 3 and the superconducting thin film 3 which have entered the groove 1b are separated. It is desirable because it can be more easily joined to. Such an overhang can be achieved by making an angle in the direction of irradiation of Ar ions during ion milling.

また、超電導薄膜2,3の材質としてはYBCO以外の酸化
物高温超電導体や、あるいはNb等金属系超電導体を使用
できることは勿論であり、基板1の材質としては、ZrO2
やYSZ等の、使用する超電導体に対して整合性のよい任
意のものを使用することができる。
Further, as the material of the superconducting thin films 2 and 3, it is needless to say that a high temperature oxide superconductor other than YBCO or a metal-based superconductor such as Nb can be used, and the material of the substrate 1 is ZrO 2
Any material having good compatibility with the superconductor used, such as YSZ or YSZ, can be used.

<発明の効果> 以上説明したように、本発明によれば、超電導薄膜を
積層することなく、かつ、薄膜の微細加工を必要とする
ことなく、簡単なプロセスによって準平面型のジョセフ
ソン接合が得られ、酸化物高温超電導体を用いても高性
能の素子を再現性良く、かつ、高歩留りのもとに得るこ
とができる。
<Effects of the Invention> As described above, according to the present invention, a quasi-plane type Josephson junction can be formed by a simple process without stacking superconducting thin films and without requiring fine processing of the thin films. Even if an oxide high-temperature superconductor is used, a high-performance element can be obtained with good reproducibility and high yield.

【図面の簡単な説明】[Brief description of the drawings]

第1図は本発明実施例の斜視図、 第2図乃至第5図はその製造方法の説明図、 第6図は本発明の他の実施例の基板の段部形状の説明図
である。 1……基板 1a……段部 1b……溝 2,3……超電導薄膜 J……弱接合部
FIG. 1 is a perspective view of an embodiment of the present invention, FIGS. 2 to 5 are explanatory views of a manufacturing method thereof, and FIG. 6 is an explanatory view of a stepped shape of a substrate of another embodiment of the present invention. 1 ... Substrate 1a ... Step 1b ... Groove 2,3 ... Superconducting thin film J ... Weak junction

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】表面に段差が設けられ、かつ、その上段側
平面には一端が段部に至って側方に開放された溝が形成
されてなる基板の、段部を挟む上段側および下段側平面
にそれぞれ超電導薄膜が形成され、その上段側および下
段側の超電導薄膜が、上記溝内に入り込んでいる超電導
体を介して相互に接合されてなる準平面型ジョセフソン
接合素子。
1. A substrate having a step formed on the surface thereof, and a groove having one end reaching the step and being opened to the side on a plane on the upper step side, the upper step side and the lower step side sandwiching the step section. A quasi-planar type Josephson junction device in which superconducting thin films are formed on respective planes, and the upper and lower superconducting thin films are joined to each other through the superconductors that enter the grooves.
JP1033409A 1989-02-13 1989-02-13 Quasi-planar Josephson junction device Expired - Fee Related JP2684745B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1033409A JP2684745B2 (en) 1989-02-13 1989-02-13 Quasi-planar Josephson junction device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1033409A JP2684745B2 (en) 1989-02-13 1989-02-13 Quasi-planar Josephson junction device

Publications (2)

Publication Number Publication Date
JPH02213176A JPH02213176A (en) 1990-08-24
JP2684745B2 true JP2684745B2 (en) 1997-12-03

Family

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Country Status (1)

Country Link
JP (1) JP2684745B2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5612545A (en) * 1991-12-23 1997-03-18 Sumitomo Electric Industries, Ltd. Superconducting quantum interference device formed of oxide superconductor thin film
USRE37587E1 (en) * 1990-12-28 2002-03-19 Sumitomo Electric Industries Ltd. Superconducting quantum interference device formed of oxide superconductor thin film
GB2288094A (en) * 1994-03-25 1995-10-04 Secr Defence Superconductive junction

Also Published As

Publication number Publication date
JPH02213176A (en) 1990-08-24

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