JP2663342B2 - Jig for evaluating characteristics of microwave and millimeter wave integrated circuits - Google Patents
Jig for evaluating characteristics of microwave and millimeter wave integrated circuitsInfo
- Publication number
- JP2663342B2 JP2663342B2 JP9417395A JP9417395A JP2663342B2 JP 2663342 B2 JP2663342 B2 JP 2663342B2 JP 9417395 A JP9417395 A JP 9417395A JP 9417395 A JP9417395 A JP 9417395A JP 2663342 B2 JP2663342 B2 JP 2663342B2
- Authority
- JP
- Japan
- Prior art keywords
- microwave
- millimeter
- wave integrated
- probe
- jig
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000523 sample Substances 0.000 claims description 43
- 238000011156 evaluation Methods 0.000 claims description 19
- 238000003780 insertion Methods 0.000 claims description 6
- 230000037431 insertion Effects 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 3
- 238000000605 extraction Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 17
- 239000003990 capacitor Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Measurement Of Resistance Or Impedance (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は、高速・大容量通信装置
等に用いるマイクロ波・ミリ波集積回路の特性を評価す
るためのマイクロ波・ミリ波集積回路の評価治具に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a microwave / millimeter wave integrated circuit evaluation jig for evaluating characteristics of a microwave / millimeter wave integrated circuit used for a high-speed, large-capacity communication device or the like.
【0002】[0002]
【従来の技術】マイクロ波・ミリ波集積回路としては種
々のものが用いられており、マイクロ波あるいはミリ波
の発振器として、発振周波数の安定化、低位相雑音化の
ために、誘電体共振器(DR)を搭載したものもある。
このような誘電体共振器を搭載したマイクロ波・ミリ波
集積回路の特性を評価するための特性評価治具として、
図3のようなものが知られている。2. Description of the Related Art Various types of microwave / millimeter wave integrated circuits are used. As a microwave or millimeter wave oscillator, a dielectric resonator is used to stabilize the oscillation frequency and reduce phase noise. Some have (DR).
As a characteristic evaluation jig for evaluating the characteristics of a microwave / millimeter wave integrated circuit equipped with such a dielectric resonator,
The one shown in FIG. 3 is known.
【0003】図3に示す特性評価治具21は、上面が開
口する箱体22と該箱体22の開口面を閉止し得る蓋体
23とからなるケーシング内に、誘電体共振器(DR)
24を搭載したマイクロ波・ミリ波集積回路としての発
振器チップ25をサブキャリア26上に定置して収納
し、ケーシング外部へ至る導波管あるいは同軸の出力ポ
ート27へマイクロ波回路基板(MIC基板)28およ
び図示を省略した変換部を介して発振器チップ25の出
力が導かれる。[0003] A characteristic evaluation jig 21 shown in FIG. 3 includes a dielectric resonator (DR) in a casing comprising a box 22 having an open upper surface and a lid 23 capable of closing the opening surface of the box 22.
An oscillator chip 25 as a microwave / millimeter wave integrated circuit on which a 24 is mounted is fixedly housed on a subcarrier 26, and a microwave circuit board (MIC board) is connected to a waveguide or a coaxial output port 27 extending to the outside of the casing. The output of the oscillator chip 25 is led through a converter 28 and a converter not shown.
【0004】また、発振器チップ25へのバイアス供給
には、箱体22の側面を貫通する3本のバイアス端子2
9,29,29をバイアス回路用サブキャリア30上に
形成した線路31,31,31と導通させ、これら線路
31…と発振器チップ25とを例えばワイヤボンディン
グ等で接続するものとなっている。さらに、蓋体23に
は金属製の調整ビス32を設けて有り、該調整ビス32
の直下方に位置させたDR24との離隔距離を変化させ
ることで、DR24の共振周波数の調整が行えるように
なっている。To supply a bias to the oscillator chip 25, three bias terminals 2 penetrating through the side surface of the box 22 are provided.
9, 29, 29 are made conductive with the lines 31, 31, 31 formed on the bias circuit subcarrier 30, and these lines 31 are connected to the oscillator chip 25 by, for example, wire bonding. Further, a metal adjusting screw 32 is provided on the lid 23, and the adjusting screw 32
The resonance frequency of the DR 24 can be adjusted by changing the distance between the DR 24 and the DR 24 located immediately below the DR 24.
【0005】[0005]
【発明が解決しようとする課題】しかしながら、上述し
たような従来の評価治具は、発振器チップ25やMIC
基板28を定置するサブキャリア26に加えて、バイア
ス回路用サブキャリア30等を必要とすることから、箱
体22内における組立調整が非常に煩雑なものとなっ
て、多大の時間と労力を要することとなる。しかも、出
力ポート27とMIC基板28とを接続する変換部の特
性は、評価結果に大きな影響与えることとなるが、低損
失な変換部を得ること及びその特性を一定に保つことは
困難であり、必ずしも高精度な評価が得られないと言う
欠点もあった。However, the conventional evaluation jig as described above uses the oscillator chip 25 and the MIC.
Since the bias circuit subcarrier 30 and the like are required in addition to the subcarrier 26 on which the substrate 28 is fixed, the assembly adjustment in the box 22 becomes very complicated, and a great deal of time and labor is required. It will be. In addition, the characteristics of the conversion unit that connects the output port 27 and the MIC board 28 have a great effect on the evaluation result, but it is difficult to obtain a low-loss conversion unit and keep the characteristics constant. However, there is a disadvantage that high-precision evaluation cannot always be obtained.
【0006】さらに、サブキャリア26やバイアス回路
用サブキャリア30等を要する組立上の制約から、特性
評価治具21自体の構造が複雑で比較的大型(例えば、
一辺が40〜50mm程度の直方体)となってしまう。
このため、特性評価治具21の熱容量が大きくなり、温
度特性の評価を行う際には、温度可変ステージを有する
ウエハープローバ等を用いた簡便な加熱手段を採ること
ができない点も問題であった。In addition, due to assembly restrictions requiring the subcarrier 26 and the bias circuit subcarrier 30, etc., the structure of the characteristic evaluation jig 21 itself is complicated and relatively large (for example,
(A rectangular parallelepiped with one side of about 40 to 50 mm).
For this reason, the heat capacity of the characteristic evaluation jig 21 becomes large, and when evaluating the temperature characteristics, there is also a problem that a simple heating means using a wafer prober having a temperature variable stage cannot be adopted. .
【0007】そこで、本発明は、マイクロ波・ミリ波集
積回路における温度特性を含めた特性評価を簡便に行い
得るマイクロ波・ミリ波集積回路の特性評価治具の提供
を目的とする。SUMMARY OF THE INVENTION It is an object of the present invention to provide a microwave / millimeter-wave integrated circuit characteristic evaluation jig capable of easily performing a characteristic evaluation including a temperature characteristic in a microwave / millimeter-wave integrated circuit.
【0008】[0008]
【課題を解決するための手段】上記課題を解決するため
に、本発明に係るマイクロ波・ミリ波集積回路の特性評
価治具は、特性評価用のマイクロ波・ミリ波集積回路
(例えば発振器チップ3)を定置可能な載置面(4a)
上に、高周波プローブ(12)との接続が容易なマイク
ロ波・ミリ波伝送線路(例えば信号線7a,8a)をマ
イクロ波・ミリ波集積回路の出力取り出しラインとして
形成したマイクロ波回路基板(例えば第1,第2MIC
基板7,8)を備える金属製の基体(4)と、上記基体
の載置面から所定距離を隔てて配設した金属製の蓋体
(5)と、上記マイクロ波回路基板の出力ポートと高周
波プローブとのコンタクトを可能ならしめる高周波プロ
ーブ接続用空部(9)と、マイクロ波・ミリ波集積回路
へのバイアス供給に用いるバイアスプローブ(13)を
挿通するためのバイアスプローブ挿通用空部と(1
0)、から成るものとした。In order to solve the above-mentioned problems, a jig for evaluating characteristics of a microwave / millimeter-wave integrated circuit according to the present invention includes a microwave / millimeter-wave integrated circuit for evaluating characteristics (for example, an oscillator chip). Placement surface (4a) on which 3) can be placed
A microwave circuit board (e.g., a microwave / millimeter wave transmission line (e.g., signal lines 7a, 8a)) formed as an output extraction line of a microwave / millimeter wave integrated circuit, which is easily connected to the high frequency probe (12). First and second MIC
A metal base (4) including the substrates (7, 8), a metal lid (5) disposed at a predetermined distance from the mounting surface of the base, and an output port of the microwave circuit board. A high-frequency probe connection space (9) enabling contact with the high-frequency probe, and a bias probe insertion space for inserting a bias probe (13) used for supplying a bias to a microwave / millimeter-wave integrated circuit. (1
0).
【0009】[0009]
【実施例】次に、本発明に係るマイクロ波・ミリ波集積
回路の特性評価治具の実施例について、添付図面に基づ
き詳細に説明する。Next, an embodiment of a jig for evaluating characteristics of a microwave / millimeter wave integrated circuit according to the present invention will be described in detail with reference to the accompanying drawings.
【0010】図1に示すのは、本発明に係るマイクロ波
・ミリ波集積回路の特性評価治具1であり、誘電体共振
器(DR)2を搭載したマイクロ波・ミリ波集積回路と
しての発振器チップ3を定置可能な平板状の載置面4a
を有する金属製の基体4に対して、その四角部から支持
柱4b,4b,4b,4bを各々載置面4a側に延出さ
せ、これら支持柱4b…を介して金属製の蓋体5を着脱
可能に取り付けた外観としてある。FIG. 1 shows a jig 1 for evaluating the characteristics of a microwave / millimeter wave integrated circuit according to the present invention, which is a microwave / millimeter wave integrated circuit having a dielectric resonator (DR) 2 mounted thereon. Flat mounting surface 4a on which oscillator chip 3 can be mounted
, The supporting columns 4b, 4b, 4b, 4b are respectively extended from the square portions to the mounting surface 4a side, and the metal lid 5 is interposed through the supporting columns 4b. It has an external appearance that is detachably attached.
【0011】また、蓋体5の例えば略々中央部に調整ビ
ス6を螺着してあり、該調整ビス6と対峙するように発
振器チップ3に搭載したDR2を位置させると、この調
整ビス6がDR2との離隔距離を可変調整可能な共振状
態調整手段として機能するのである。なお、発振器チッ
プ3がDR2等の共振状態調整を必要とする共振器を搭
載していない場合には、共振状態調整手段を設ける必要
はない。An adjusting screw 6 is screwed into, for example, a substantially central portion of the lid 5. When the DR 2 mounted on the oscillator chip 3 is positioned so as to face the adjusting screw 6, the adjusting screw 6 is screwed. Function as resonance state adjusting means capable of variably adjusting the separation distance from DR2. Note that when the oscillator chip 3 does not include a resonator such as DR2 that requires resonance state adjustment, it is not necessary to provide a resonance state adjustment unit.
【0012】一方、載置面4上には、発振器チップ3の
出力を取り出すための第1マイクロ波回路基板(第1M
IC基板)7および第2マイクロ波回路基板(第2MI
C基板)8を設けてあり、これら第1,第2MIC基板
7,8には、例えばコプレーナ型の高周波プローブとの
接続が容易なマイクロ波・ミリ波伝送線路たるコプレー
ナ線路として、中央の信号線7a,8aとその両側に接
地線7b,7b,8b,8bを各々形成してある。な
お、本実施例においては、電圧制御発振器としての制御
信号の入力用に第2MIC基板8を設けるものとした
が、単一のMIC基板のみを載置面4a上に設けるよう
にしても良い。On the other hand, a first microwave circuit board (first M) for taking out the output of the oscillator chip 3 is provided on the mounting surface 4.
IC board) 7 and second microwave circuit board (second MI)
The first and second MIC substrates 7 and 8 are coplanar lines, which are microwave / millimeter wave transmission lines that can be easily connected to, for example, a coplanar high-frequency probe. Ground wires 7b, 7b, 8b, 8b are formed on each side of the wires 7a, 8a. In the present embodiment, the second MIC substrate 8 is provided for inputting a control signal as a voltage controlled oscillator, but only a single MIC substrate may be provided on the mounting surface 4a.
【0013】また、本実施例においては、基体4と蓋体
5とを支持柱4b…を介して接続するものとしたので、
各支持柱4b…との間に空部が生ずることとなる。そし
て、これらの空部を活かして、第1,第2MIC基板
7,8の出力ポートとコプレーナ型高周波プローブとの
コンタクトを可能にする高周波プローブ接続用空部9,
9を形成すると共に、発振器チップ3へのバイアス供給
に用いるバイアスプローブを挿通するためのバイアスプ
ローブ挿通用空部10を形成するものとしてある。斯く
すれば、高周波プローブ接続用空部9やバイアスプロー
ブ挿通用空部10が広くなるので、蓋体5を取り外した
状態においては、高周波プローブやバイアスプローブの
接続作業はもとより、発振器チップ3を載置面4a上に
定置する作業や該発振器チップ3と第1,第2MIC基
板7,8との接続作業も容易に行うことができる。In this embodiment, the base 4 and the lid 5 are connected via the support columns 4b.
An empty space is formed between the support columns 4b. Utilizing these voids, the high-frequency probe connection void 9, which enables contact between the output ports of the first and second MIC substrates 7, 8 and the coplanar type high-frequency probe,
9 as well as a bias probe insertion space 10 for inserting a bias probe used to supply a bias to the oscillator chip 3. In this way, the high-frequency probe connection space 9 and the bias probe insertion space 10 are widened, and thus, when the lid 5 is removed, not only the connection of the high-frequency probe and the bias probe but also the mounting of the oscillator chip 3 are performed. The work of fixing the oscillator chip 3 on the mounting surface 4a and the work of connecting the oscillator chip 3 to the first and second MIC substrates 7 and 8 can be easily performed.
【0014】さらに、本実施例においては、蓋体5に切
り欠き部を形成することで、高周波プローブ接続用空部
9,9と各々連通するコンタクト状態視認領域11を形
成してある。斯く構成したコンタクト状態視認領域11
は、MIC基板の出力ポートとコプレーナ型高周波プロ
ーブとのコンタクト状態をMIC基板の直上方から視認
することを可能ならしめる。Further, in the present embodiment, a notch portion is formed in the lid 5 to form a contact state viewing area 11 which communicates with the high-frequency probe connection cavities 9, 9 respectively. Contact state recognition area 11 thus configured
The above makes it possible to visually check the contact state between the output port of the MIC substrate and the coplanar high-frequency probe from directly above the MIC substrate.
【0015】図2に示すのは、特性評価治具1の使用状
態を示すものであり、第1,第2MIC基板7,8のコ
プレーナ線路に対応するような中央の信号用パッド12
aと両側の接地パッド12b,12bを有するコプレー
ナ型の高周波プローブ12を、高周波プローブ接続用空
部9を介して第1,第2MIC基板7,8にコンタクト
させると共に、バイアスプローブ挿通用空部10を介し
てバイアスプローブ13,13,13を発振器チップ3
に接続してある。なお、高周波プローブ12の信号用パ
ッド12a(プローブ内の信号線に接続されたパッド)
と接地パッド12b,12b(プローブ内の接地線に接
続されたパッド)は、第1,第2MIC基板7,8の信
号線7a,8aと接地線7b,7b,8b,8b上へ圧
接することによりコンタクトさせてあり、この接続状態
は、測定中でもコンタクト状態視認領域11,11から
顕微鏡で確認することができる。FIG. 2 shows a state of use of the characteristic evaluation jig 1, in which a central signal pad 12 corresponding to a coplanar line of the first and second MIC substrates 7 and 8.
and a coplanar type high frequency probe 12 having ground pads 12b, 12b on both sides is contacted with the first and second MIC substrates 7, 8 via a high frequency probe connection space 9, and a bias probe insertion space 10 is provided. The bias probes 13, 13, 13 via the oscillator chip 3
Connected to The signal pad 12a of the high-frequency probe 12 (pad connected to a signal line in the probe)
And the ground pads 12b and 12b (pads connected to the ground lines in the probe) are pressed against the signal lines 7a and 8a of the first and second MIC substrates 7 and 8 and the ground lines 7b, 7b, 8b and 8b. The connection state can be confirmed with a microscope from the contact state viewing areas 11 and 11 even during the measurement.
【0016】上記のように構成した特性評価治具を用い
てマイクロ波・ミリ波集積回路の特性評価を行う場合、
先ず基体4の載置面4上に被測定チップたる発振器チッ
プ3を定置し、該発振器チップ3と第1,第2MIC基
板7,8の信号線7a,8aとをワイヤボンディング等
で接続し、次いでバイアスプローブ13…を発振器チッ
プ3に接続すると共に高周波プローブ12,12を第
1,第2MIC基板7,8にコンタクトさせ、蓋体5を
止めネジ14…で基体4の支持柱4a…に取り付けるだ
けでよい。従って、特性評価治具の組立調整を極めて簡
便に行えるのである。When the characteristic evaluation of the microwave / millimeter wave integrated circuit is performed using the characteristic evaluation jig configured as described above,
First, the oscillator chip 3, which is a chip to be measured, is fixed on the mounting surface 4 of the base 4, and the oscillator chip 3 and the signal lines 7a, 8a of the first and second MIC substrates 7, 8 are connected by wire bonding or the like. Then, the bias probes 13 are connected to the oscillator chip 3 and the high-frequency probes 12, 12 are brought into contact with the first and second MIC substrates 7, 8, and the lid 5 is attached to the support columns 4a of the base 4 with set screws 14. Just need. Therefore, the assembly adjustment of the characteristic evaluation jig can be performed extremely easily.
【0017】しかも、コプレーナ線路を形成した第1,
第2MIC基板7,8によって、高周波プローブ12,
12を接続するものとしたので、安定したコンタクト状
態を比較的簡便に期すことができ、プローブの先端で高
精度の校正ができる高周波プローブ12を用いた高精度
の特性評価が可能になる。さらに、特性評価治具1の大
きさとして60GHz帯の場合、基体4の厚さ数mm、
大きさ1cm程度と極めて小型軽量に構成することがで
きるので、熱容量が小さく、温度可変ステージを用いた
簡便な昇温手段によって、発振器チップ3の温度特性も
極めて効率よく測定することができる。In addition, the first and second coplanar lines are formed.
The second MIC substrates 7 and 8 enable the high frequency probe 12 and
Since the connection 12 is connected, a stable contact state can be relatively easily achieved, and high-precision characteristics evaluation using the high-frequency probe 12 that can perform high-precision calibration at the tip of the probe becomes possible. Further, when the size of the characteristic evaluation jig 1 is in the 60 GHz band, the thickness of the base 4 is several mm,
Since it can be configured to be extremely small and light with a size of about 1 cm, the temperature characteristics of the oscillator chip 3 can be extremely efficiently measured by a simple heat-up means using a small heat capacity and a variable temperature stage.
【0018】なお、本実施例では発振器チップ3上の電
極パッドにバイアスプローブ13…を直接コンタクトさ
せる場合について説明したが、例えば発振器チップ3の
近傍にバイパス用のチップキャパシタを設けて電極パッ
ドと接続し、チップキャパシタにバイアスプローブ13
…をコンタクトさせてもよい。また、本実施例はDR2
を搭載した発振器チップ3の特性評価をする場合につい
て説明したが、誘電体共振器等を用いない場合において
も、チップ上のカバーが有効なとき、またカバーの影響
を評価するときなどにも、蓋体5が有効である。さら
に、本実施例においては高周波プローブとしてコプレー
ナ型のものを用いるものとしたが、これに限定されるも
のではなく、例えば同軸型の高周波プローブをマイクロ
ストリップ線路を形成したMIC基板との組合せで用い
るようにしても良い。In this embodiment, the case where the bias probes 13 are directly contacted with the electrode pads on the oscillator chip 3 has been described. For example, a chip capacitor for bypass is provided near the oscillator chip 3 and connected to the electrode pads. And the bias probe 13 is connected to the chip capacitor.
... may be contacted. In this embodiment, the DR2
Although the description has been given of the case where the characteristics of the oscillator chip 3 equipped with are covered, even when the dielectric resonator or the like is not used, when the cover on the chip is effective, when evaluating the influence of the cover, etc. The lid 5 is effective. Further, in this embodiment, a coplanar type high frequency probe is used as the high frequency probe, but the present invention is not limited to this. For example, a coaxial high frequency probe is used in combination with an MIC substrate on which a microstrip line is formed. You may do it.
【0019】[0019]
【発明の効果】以上説明したように、本発明に係るマイ
クロ波・ミリ波集積回路の特性評価治具によれば、温度
特性も含めてマイクロ波・ミリ波集積回路の特性評価
を、高精度且つ簡便に行うことができるので、マイクロ
波・ミリ波回路装置の量産化、通信システムへの応用拡
大に寄与すること大である。As described above, according to the jig for evaluating characteristics of a microwave / millimeter wave integrated circuit according to the present invention, it is possible to evaluate the characteristics of a microwave / millimeter wave integrated circuit including temperature characteristics with high accuracy. Since it can be performed easily and easily, it will greatly contribute to mass production of microwave / millimeter wave circuit devices and application expansion to communication systems.
【図1】本発明に係るマイクロ波・ミリ波集積回路の特
性評価治具の外観を示す斜視図である。FIG. 1 is a perspective view showing the appearance of a jig for evaluating characteristics of a microwave / millimeter wave integrated circuit according to the present invention.
【図2】本発明に係るマイクロ波・ミリ波集積回路の特
性評価治具の使用状態を示す斜視図である。FIG. 2 is a perspective view showing a use state of a jig for evaluating characteristics of a microwave / millimeter wave integrated circuit according to the present invention.
【図3】従来の特性評価治具の一例を示す斜視図であ
る。FIG. 3 is a perspective view showing an example of a conventional characteristic evaluation jig.
1 特性評価治具 3 発振器チップ 4 基体 5 蓋体 7 第1MIC基板 7a 信号線 8 第2MIC基板 8a 信号線 9 高周波プローブ接続用空部 10 バイアスプローブ挿通用空部 12 高周波プローブ 13 バイアスプローブ DESCRIPTION OF SYMBOLS 1 Characteristic evaluation jig 3 Oscillator chip 4 Substrate 5 Lid 7 First MIC board 7a Signal line 8 Second MIC board 8a Signal line 9 High-frequency probe connection space 10 Bias probe insertion space 12 High-frequency probe 13 Bias probe
Claims (3)
路を定置可能な載置面上に、高周波プローブとの接続が
容易なマイクロ波・ミリ波伝送線路をマイクロ波・ミリ
波集積回路の出力取り出しラインとして形成したマイク
ロ波回路基板を備える金属製の基体と、 上記基体の載置面から所定距離を隔てて配設した金属製
の蓋体と、 上記マイクロ波回路基板の出力ポートと高周波プローブ
とのコンタクトを可能ならしめる高周波プローブ接続用
空部と、 マイクロ波・ミリ波集積回路へのバイアス供給に用いる
バイアスプローブを挿通するためのバイアスプローブ挿
通用空部と、 から成ることを特徴とするマイクロ波・ミリ波集積回路
の特性評価治具。1. A microwave / millimeter-wave transmission line that can be easily connected to a high-frequency probe is mounted on a mounting surface on which a microwave / millimeter-wave integrated circuit for characteristic evaluation can be placed. A metal base including a microwave circuit board formed as an output extraction line; a metal lid disposed at a predetermined distance from the mounting surface of the base; an output port of the microwave circuit board and a high frequency A high-frequency probe connection space enabling contact with the probe, and a bias probe insertion space for inserting a bias probe used for bias supply to a microwave / millimeter wave integrated circuit. Jig for evaluating the characteristics of microwave and millimeter-wave integrated circuits.
路は誘電体共振器を備えるものとし、該誘電体共振器と
の離隔距離を可変調整可能な共振状態調整手段を蓋体に
設けたことを特徴とする請求項1に記載のマイクロ波・
ミリ波集積回路の特性評価治具。2. A microwave / millimeter-wave integrated circuit for evaluating characteristics includes a dielectric resonator, and a lid is provided with resonance state adjusting means capable of variably adjusting a distance from the dielectric resonator. The microwave according to claim 1, wherein
A jig for evaluating the characteristics of millimeter-wave integrated circuits.
高周波プローブとのコンタクト状態を外部から視認可能
なコンタクト状態視認領域を蓋体に形成したことを特徴
とする請求項1又は請求項2に記載のマイクロ波・ミリ
波集積回路の評価治具。3. The lid according to claim 1, wherein a contact state viewing region in which a contact state between the output port of the microwave circuit board and the high-frequency probe is visible from outside is formed on the lid. Jig for evaluating microwave and millimeter wave integrated circuits.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9417395A JP2663342B2 (en) | 1995-03-29 | 1995-03-29 | Jig for evaluating characteristics of microwave and millimeter wave integrated circuits |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9417395A JP2663342B2 (en) | 1995-03-29 | 1995-03-29 | Jig for evaluating characteristics of microwave and millimeter wave integrated circuits |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH08271581A JPH08271581A (en) | 1996-10-18 |
JP2663342B2 true JP2663342B2 (en) | 1997-10-15 |
Family
ID=14102958
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9417395A Expired - Fee Related JP2663342B2 (en) | 1995-03-29 | 1995-03-29 | Jig for evaluating characteristics of microwave and millimeter wave integrated circuits |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2663342B2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106270881B (en) * | 2016-08-16 | 2019-05-14 | 北方电子研究院安徽有限公司 | A kind of microwave circuit shell side connector sealing welding tooling and welding method |
-
1995
- 1995-03-29 JP JP9417395A patent/JP2663342B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH08271581A (en) | 1996-10-18 |
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